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MINATEC 25th of september 2003
Organic solar cells
based on conjugated polymer/fullerene
interpenetrating networks
Christoph Winder, N. Serdar Sariciftci
Christian Doppler Laboratory for Plastic Solar CellsLinz Institute for Organic Solar Cells LIOS
Physical Chemistry, Johannes Kepler University LinzAustria
Organic solar cells
based on conjugated polymer/fullerene
interpenetrating networks
Christoph Winder, N. Serdar Sariciftci
Christian Doppler Laboratory for Plastic Solar CellsLinz Institute for Organic Solar Cells LIOS
Physical Chemistry, Johannes Kepler University LinzAustria
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Linz Institute for Organic Solar Cells
•Department of Physical Chemistry (1996)www.ipc.uni-linz.ac.at•Quantum Solar Energy Linz QSEL (1997)•Christian Doppler Laboratory for Plastic SolarCells (1998)•Linz Institute for Organic Solar Cellswww.lios.att (2000)•QSEL merged with Konarka (2003)
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Outline
• Why are these materials interesting forthin film solar cells?
• How do they work?
• What potential has this system forfurther developments?
• Why are these materials interesting forthin film solar cells?
• How do they work?
• What potential has this system forfurther developments?
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Materials
O
O n
O
OMe
PCBM
S** n
regioregularpoly-(3-hexyl)-thiophene
N NS
NNS
SN
SR
C12H25
R
n
PTPTB
NN
N
N
N
N
N
N
N CH3
Zn(CH3)3C
C(CH3)3
C(CH3)3
Pc-C60
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Materials
• Semiconductors by organic synthesis
• Soluble solution processing
• Applications: thin film technology-field effect transistors
-electrostatic shielding
-Light emitting diodes
-Photodetectors and solar cells
• Semiconductors by organic synthesis
• Soluble solution processing
• Applications: thin film technology-field effect transistors
-electrostatic shielding
-Light emitting diodes
-Photodetectors and solar cells
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Bulk Heterojunction Solar Cells
Processes necessary for photovoltaic activity:How to improve?
• Light Absorption: matching the solaremission spectrum
• Charge Generation: efficient photoinducedcharge transfer
• Charge Transport and Collection at theElectrodes: better charge carrier mobility
Processes necessary for photovoltaic activity:How to improve?
• Light Absorption: matching the solaremission spectrum
• Charge Generation: efficient photoinducedcharge transfer
• Charge Transport and Collection at theElectrodes: better charge carrier mobility
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Charge Generation
N.S. Sariciftci, L. Smilowitz, A.J. Heeger, F. Wudl, Science 258, 1474 (1992).
CB
VB
Conjugated polymer C60
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Charge Generation
LESR of Poly(3-octylthiophene) + C60(1:1 weight %), Ar+ Laser 488nm100mW/cm2, 80 K
Photoinduced absorption of Poly(MDMO-phenylene-vinylene) + PCBM) (1:4 weight %), Ar+ Laser 488nm, 40mW, 16 K
0.8 1.2 1.6 2.0
-2x10-3
0
2x10-3
inphase outphase
-?T
/T
Photonenergy [ eV ]
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Charge Generation
Photoinduced chargetransfer
Forward transfer~45 fs
faster thancompeting processes
QE ~ 100 % (blend)
Photoinduced chargetransfer
Forward transfer~45 fs
faster thancompeting processes
QE ~ 100 % (blend)
C.J. Brabec, G. Zerza, G. Cerullo, S. De- Silvestri, S. Luzatti, J.C. Hummelen,N.S. Sariciftci, Chem. Phys. Lett. 340, 232 (2001)
0,0 0,2 0,4 0,6 0,8 1,0-10
-5
0
5
10
15
?T [a
. u.]
Time [ps]
Pump: 10 fs pulses peaking at 540 nmProbe: same pulse with filter at 650 nm
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Charge Recombination
Ana F. Nogueira, Ivan Montanari, Jenny Nelson, James R. Durrant, Christoph Winder, N. SerdarSariciftci, Christoph Brabec, Journal of Physical Chemistry B 2003, 107, 1567
Pump: at 500 nm <1 nsProbe: at 940 nm
Chargerecombination inµs time scale
Slower thancollection atelectrodes
Chargerecombination inµs time scale
Slower thancollection atelectrodes
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Bulk Heterojunction
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Bulk Heterojunction
h? Alkoxy-PPVPCBMPCBM
e-
ITO on Glass / Plastic
P+e-
e-
e-
e-
P+
Al- ElectrodeAl- Electrode e-
G.Yu, J. Gao, J.C. Hummelen, F. Wudl, A.J. Heeger, Science 270, 1789 (1995)Bulk heterojunction concept, 2.9 % monochromatic efficiency
C.J. Brabec et. al., Advanced Functional Materials 11, 374 (2001)V. Dykonov, Physica E 53, 14 (2002)
Percolation andmobility forboth of chargecarriers
Selectiveelectrodes
Percolation andmobility forboth of chargecarriers
Selectiveelectrodes
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Efficiencies
System Year Quantumefficiency [%]
Efficiency whitelight [%]
-
Lit
PPV/C60 1995 ~ 10 1
POPT/CN-PPV 1998 30 1.9 2
MDMO-PPV/[60]PCBM
2001 50 2.5 3,4
P3HT/ PCBM 2002 70 2.8 5,6
MDMO-PPV/[70]PCBM
2003 66 3.0 7
[1] G. Yu, J. Gao, J. C. Hummelen, F. Wudl, A. J. Heeger, Science 1995, 270, 1789[2] M. Granstrom, K. Petritsch, A. C. Arias, R. Lux, M. R. Andersson, R. H. Friend, Nature 1998, 395, 257[3] S. E. Shaheen, C. J. Brabec, N. S. Sariciftci, F. Padinger, T. Fromherz, J. C. Hummelen, Applied Physics Letters 2001, 78, 841[4] C. J. Brabec, S. E. Shaheen, C. Winder, N. S. Sariciftci, P. Denk, Applied Physics Letters 2002, 80, 1288[5] P. Schlilinsky, C. Waldauf, C. J. Brabec, Applied Physics Letters, 2002, 81, 3855[6] F. Padinger, R. Rittberger, N. S. Sariciftci, Advanced Functional Materials 2003, 13, 85[7] M. Wienk, J. Kroon, W. J. H. Verhees, J. Knool, J. C. Hummelen, P. A. van Hal, R. A. J. Janssen, Angewandte Chemie Int. Edition , 2003, 42,3371
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Production
ITO coated glass of plastic serves as substrate.
Sealing against oxygen/water
Evaporation of top contact
Preparation of ITO-cleaning
Device/panel testing
Coating of hole conduction layer
PEDOT:PSS
Coating of active layer
PEDOT
Active layer
spacer
Aluminum
ITO
Glass
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Production
Sealing against oxygen/water
Evaporation of top contact
Preparation of ITO-cleaning
Device/panel testing
Coating of hole conduction layer
PEDOT:PSS
Coating of active layer
Doctor blade
Spin coating
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Production
Sealing against oxygen/water
Evaporation of top contact
Preparation of ITO-cleaning
Device/panel testing
Coating of hole conduction layer
PEDOT:PSS
Coating of active layer
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Production
Sealing against oxygen/water
Evaporation of top contact
Preparation of ITO-cleaning
Device/panel testing
Coating of hole conduction layer
PEDOT:PSS
Coating of active layer
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Optimisation
Possible Improvements
? eff = Isc * Voc * FF / Iinc
Isc Tuning of the Transport Properties - MobilityOptimization of Cell Geometry in Dependence of the Cell ThicknessInterference- optical modelling
Voc Tuning of the Electronic Levels of the Donor Acceptor System
FF Tuning of the Contacts and MorphologyLowering of Serial Resistivities - Interpenetrating Network
Iinc Tuning of the Spectral Absorbance Sensitization to the Optical Bandgap
Possible Improvements
? eff = Isc * Voc * FF / Iinc
Isc Tuning of the Transport Properties - MobilityOptimization of Cell Geometry in Dependence of the Cell ThicknessInterference- optical modelling
Voc Tuning of the Electronic Levels of the Donor Acceptor System
FF Tuning of the Contacts and MorphologyLowering of Serial Resistivities - Interpenetrating Network
Iinc Tuning of the Spectral Absorbance Sensitization to the Optical Bandgap
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Modelling Optical Absorption
300 400 500 600 700 800 9000.0
5.0x104
1.0x105
1.5x105
2.0x105
MDMO-PPV PCBM Blend 1:4
abso
rptio
n co
eff.
? [c
m-1]
wavelength ? [nm]
H. Hoppe, N.S. Sariciftci, D. Meissner, Mol. Cryst. Liq. Cryst., 385, [233]/113, (2002) H. Hoppe, N. Arnold, N. S. Sariciftci, D. Meissner Solar Energy Materials and Solar Cells 2003, in print
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Open Circuit Voltage
-0,70 -0,65 -0,60 -0,55
0,55
0,60
0,65
0,70
0,75
0,80
0,85
S1 = 0.95
Vol
tage
[V
]
E1
Red [V]
PCBM
azafulleroid 5 C60
ketolactam 6
(a)
Dependence on Acceptor Strength
C.J. Brabec et.al. Advanced Functional Materials 11, 374 (2001)
Fermi Level Pinning
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Optimisation: Contacts
..
LiF layers forms
Ohmic contact
for electrons
at the Al electrode:
Contact resistivity
limits FF
0,0 0,2 0,4 0,6 0,8 1,0-6
-5
-4
-3
-2
-1
0 New Generation: Standard Electrode New Generation: Optimized Electrode
Cur
rent
Den
sity
(mA
/cm
2)
Voltage (V)
H. S. Hung, C. W. Tang, and M. G. Mason, Appl. Phys. Lett. 70, 152 (1997).C.J. Brabec, S.E. Shaheen, C. Winder, N.S. Sariciftci, P. Denk, Appl. Phys. Lett. 80, p1288(2002)
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Optimisation: Contacts
-2,0 -1,5 -1,0 -0,5 0,0 0,5 1,0 1,5 2,0
0
20
40
60
80
100
120
ohne LiF mit LiF
Cur
rent
Den
sity
(mA
/cm
2 )
Voltage (V)
RpJDiode
Rs
0.92.954763Au/LiF [6Å]
0.7851620Au/-
3.25.159832Al/LiF [12Å]
1.1461821Al/LiF [3Å]
0.91652788Al/SiOx [6Å]
1.33.863834Al/LiF [6Å]
1.21053759Al/-
RP[kO]
RS[O]
FFVOC[mV]
Layer
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Optimisation: Morphology
0,0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9-6
-5
-4
-3
-2
-1
0
from toluene from chlorobenzene
Cur
rent
Den
sity
(m
A/c
m2 )
Voltage (V)
S. E. Shaheen, et al. Appl Phys. Lett, 78, 841 (2001).
400 450 500 550 600 650 7000
102030405060
IPC
E (
%)
Wavelength (nm)
5060708090
100
Tra
nsm
issi
on (
%)
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Optimisation: Blend
Toluene cast film
Chlorobenzene cast film
b
0.5 ? m
0.0 0.5 1.0 1.5 2.0 2.5-4
0
4
8
Sur
face
Hei
ght (
nm)
D i s t ance ( ? m )
(a)
0.0 0.5 1.0 1.5 2.0 2.5- 4
0
4
8
Sur
face
Hei
ght (
nm)
D i s tance ( ? m )
(b)
a
0.5 ? m
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Optimised Device
-1,0-0,9 -0,8 -0,7 -0,6-0,5-0,4-0,3-0,2-0,1 0,0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1,01E-6
1E-5
1E-4
1E-3
0,01
0,1
1
10
100
80 mW/cm² dark
Cur
rent
den
sity
[mA
/cm
²]
Voltage [V]
Voc ~ 810 mV
ISC ~ 5,2 mA cm-2
FF ? 0.62
? e ?3 %
IPCEmax ? 50 %
QE ~ 80-90 %
Voc ~ 810 mV
ISC ~ 5,2 mA cm-2
FF ? 0.62
? e ?3 %
IPCEmax ? 50 %
QE ~ 80-90 %
S. E. Shaheen, C.J. Brabec, N.S. Sariciftci. Applied Physics Letters 78, 841 (2001)
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Matching the Solar Emission
400 600 800 1000 12000
1x1018
2x1018
3x1018
4x1018
5x1018
6x1018
MDMO-PPV:PCBM 1:4
photon flux AM 1.5ph
oton
s [n
m-2 s
-1 n
m-1]
Wavelength [nm]
0
50
100
[%]
integrated photon flux [%] absorbed photons [%]
Christoph Winder Gebhard Matt et al Thin Solid Films 403-404, 373 (2002)
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PTPTB
N NS
NNS
SN
SR
C12H25
R
n
PTPTB
A. Dhanabalan, P.A. van Hal, J.K.J.van Duren, J.L.J. van Dongen, R.A.J.Janssen, Advanced FunctionalMaterials 11, 255(2001)
C. J. Brabec, C. Winder, et.al: “DualFunction of a Low Bandgap Polymer:Photovoltaic Devices and InfraredEmitting Diodes” AdvancedFunctional Materials 12, 709 (2002)
400 600 800 10000,00
0,05
0,10
absorption
OD
[a.u
.]
Wavelength [nm]
0,0
0,5
1,0
lum
ines
cenc
e [a
.u.] luminescence
Electrochemistry:
Eox = +0.53 eV vs. NHE
Ered = -1.17 eV vs. NHE
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PTPTB/PCBM devices
PTPTB/ PCBM 1/3
Voc = 720 mV
ISC = 3 mA cm-2
FF = 0.38
? e = 1 %
PTPTB/ PCBM 1/3
Voc = 720 mV
ISC = 3 mA cm-2
FF = 0.38
? e = 1 %
-2 -1 0 1
1E-4
1E-3
0,01
0,1
1
10
100
AM 1.5 dark
curr
ent [
mA
cm
-2]
Voltage [V]
400 500 600 700 8000
8
17
25 IPCE
IPC
E [%
]
Wavelength [nm]
0
10
20
30
40
50
60
Abs
orbe
d P
hoto
ns [%
]
Absorbed Photons
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Band structure engineering
MDMO-PPV PTPTB
PCBM
0
+1
-1
-2
[V] v
s N
HE
5
6
4
3
[V] v
s va
cuum? E ~1 eV
? E ~0.35 eV
Christoph Winder et al Proceedings of the SPIE 4801, 22 (2003)
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P3HT:PCBM “postproduction treatment”
3.52.80.6? e [%]
0.600.550.3FF
9.38.35ISC [mAcm-2]
0.560.490.3VOC [V]
T-treatedandbiased
T-treated
Prist-ine
-0,4 -0,2 0,0 0,2 0,4 0,6
-8
-4
0
4
8
P3HT: PCBM 1:2 pristine thermally treated thermally treated
and electrially biased
curr
ent d
ensi
ty [m
A/c
m²]
Voltage [V]
F. Padinger, R. Rittberger, N. S. Sariciftci, Advanced Functional Materials 2003, 13, 85P. Schilinsky, C. Waldauf. C. J. Brabec, Applied Physics Letters 2002, 81, 3885
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P3HT post productiontreatement
400 450 500 550 600 650 7000
10
20
30
40
50
60
70
thermally and electrially treated thermally treated pristine
IPC
E [%
]
Wavelength [nm]
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P3HT post productiontreatement
Post production treatment:• increased absorptionstrength in the red•Higher conversionefficiency•Diode characteristics isimproved
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Summary
•Conjugated polymer are cheap and showpossibility for easy processing
•Photoinduced charge transfer andinterpenetrating network are needed
•Possible Improvement:
•Materials parameter (absorption, bandpositions)
•Morphology
•Device structure
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Acknowledgements
•TU Eindhoven: Rene Janssen•Imperial College: James Durrant•Manchester university: Peter Skabara•University Anger: Jean Roncali•CEA Saclet: Denis Fichou•Stratingh Institute, University of Groningen: J.C. Hummelen•University of Bari: Gianluca Farinola•USA: A. Heeger (UCSB), F. Wudl (UCLA), Jenekhe (Seattle, WA), S.Shaheen (Tucson AZ)•University of Triest: Mauricio Prato•TU Ilmenau: Gerhard Gobsch
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Acknowledgements
LIOSLIOS
Andrei Andreev, Elif Arici, AntonioCravino, Gilles, Denller, Berndt Ebner,Serap Günes, Alexander Gusenbauer,Christopher Kopecny, ChristophLungenschmied, Nenad Marjanovic,Gebhard Matt, Farideh Meghdadi, MartinDrees Daniela Stoenescu, ChristophWinder, Helmut Neugebauer, (EugenBaumgartner, Christoph Brabec, MariaAntonietta Loi)
Konarka Austria (former QSEL)
Erhard Glötzl, Franz Padinger,Markus Scharber, Markus Koppe,David Mühlbacher, Patrick Denk,Attila Mozer, Roman Rittberger,Christoph Topf, (Elisabeth Wirtl)
Currently Funded by:Ministry of Education and Research, BMBF, Rep. Of GermanyChristian Doppler Society (Austria)Austrian Foundation for Advancement of Science (FWF)European Commission (JOULE III, RTD, INTAS)Ministry of Economy of Holland (EET, Univ. Groningen)ESV Land Oberösterreich