www.nandk.com
Ultra-High Resolution &Ultra-High Sensitivity Scatterometer
with Thin Film Measurement Capabilities
Product Overview Opt iP r ime -CD
®the true measure
®Technology
FULLY AUTOMATED, HIGH THROUGHPUT
OPTICAL METROLOGY SYSTEM FOR
SEMICONDUCTOR APPLICATIONS.
OCD Applications
OptiPrime-CD
n&k OptiPrime-CDOCD Scatterometry Application ExamplesThe n&k OptiPrime-CD’s OCD scatterometry applications cover structures with very large pitches and very small pitches, 2-D and 3-D complex structures including films inside and outside of shallow and deep trenches and contact holes. Because of our patented and unique optical design, n&k Technology offers the highest signal to noise ratio and lowest cost of ownership to support your OCD requirement.
696 nm
8404 nm
959 nm
497 nm
3128 nm
296 nm1008 nm
P R O F I L E C O M P A R I S O N W I T H F I B A N D X - S E M
CrossSection
n&kResults
SiO2 on Si Trench SOI Trench (Flared CD Bottom)
124 nm
1415 nm
252 nm
985 nm
Poly Recess Trench
2 - D C O M P L E X S T R U C T U R E
n&k Results - Cross Sectional View Experimental Spectra Showing DistinctRs and Rp Polarized Spectra
Si-Rich Nitride
Poly-Si
SiO2SiN
Si
31 nm
99 nm
11 nm8 nm6 nm28 nm
67 nm
33 nm
26 nm
Rs-exp Rp-exp
0
10
20
30
40
50
60
200 300 400 500 600 700 800 900Wavelength (nm)
Rs &
Rp
(%)
1000
3 - D A S Y M M E T R I C E L L I P T I C A L H O L E S
SiO2
Experimental Spectra Showing DistinctRs and Rp Polarized Spectra
60
Rs &
Rp
(%)
0
10
20
30
40
50
190 300 400 500 600 700 800 900 1000Wavelength (nm)
Rs-exp Rp-exp
CD (Y)
CD (X)
n&k Results - Top View Cross Sectional View
155 nm
44 nm54 nm
123 nm
SiON
Pitch (X) = 300 nm, Pitch (Y) = 300 nmCD (X) = 160 nm, CD (Y) = 125 nm
Si
Poly-SiSiN
OptiPrime-CD
n&k OptiPrime-CD Performance Overview
K E Y Q U A L I T I E S O F O P T I P R I M E - C D
P A T E N T E D R E F L E C T I V E O P T I C S
112 cm x 202 cm x 189 cm770 Kg100 - 240 V, 50/60 Hz, 1ΦVacuum, CDA (for FOUP Load Port)
Dimensions (W x D x H):Weight (unpacked):
Facility Requirements:
P H Y S I C A L C H A R A C T E R I S T I C S
The OptiPrime-CD is an Ultra-High Resolution and Ultra-High Sensitivity Scatterometer with Thin Film Measurement Capabilites. The system utilizes Polarized Reflectance (Rs, Rp) data to determine the optical properties (n and k), and thicknesses of thin films and critical dimensions (depth, CDs, and profiles) of the structures being analyzed. This fully-automated system can be configured for various size wafers (300 mm (12”), 200 mm (8”), 150 mm (6”)) for a large variety of semiconductor applications. Raw reflectance data is acquired over a wide wavelength range (190 – 1000 nm) with optimized signal-to-noise ratio, resulting in the capability of the OptiPrime-CD to characterize increasingly smaller features of current and next generation products.
The n&k software combines the Forouhi-Bloomer (FB) equations and Rigorous Coupled Wave Analysis (RCWA) to analyze the raw data. The Forouhi-Bloomer (FB) equations, derived from first principles of quantum physics, are universal equations describing the Refractive Index, n, and Extinction Coefficient, k, as functions of wavelength, λ, whereas RCWA determines optical critical dimensions. By combining FB and RCWA, very complex and complicated structures can be readily analyzed.
Also available is the manual-load, and cost-effective counterpart of the OptiPrime-CD, the n&k OptiPrime-CD-M, utilizing the same optical configurations and analysis capabilities, but without the automatic loading system.
M E T H O D O F A N A L Y S I S
Optimized Signal-to-Noise Ratio
• Optimized Polarized Reflectance (Rs and Rp) Data - Wavelength Range: 190 - 1000 nm - Micro-Spot Technology• Can be Configured for 300 mm (12”), 200 mm (8”),
and 150 mm (6”) Wafers• Fully Automated• Based on Patented Reflective Optics that Optimizes the
Signal-to-Noise Ratio• Strong Sensitivity to Sub-Nanometer Structural and
Material Variations - Thickness, n and k (from 190 – 1000 nm)• OCD Metrology for 2-D and 3 -D Structures
(Trenches and Contact Holes) - Depth, CD, Profile• Cognex Pattern Recognition Software• No Re-Alignment Issues Upon Light Bulb Replacement• Modular design – Easy to Maintain and Service• GEM/SECS Communication Interface• SEMI Standard and Third Party Certifications
M E T R O L O G Y P R E R E Q U I S T E S F U L L F I L L E DB Y O P T I P R I M E - C D
S Y S T E M O P E R A T I O N F L O W
Data Acquisition
Analysis
Results
• Optimized Polarized UV-Vis-NIR Reflectance• (Rs and Rp) from 190 - 1000 nm
• Forouhi-Bloomer (FB) Dispersion Equations• Rigorous Coupled Wave Analysis (RCWA)
• Optical properties: n and k from 190 - 1000 nm• Film thickness• OCD metrology (depth, CD, profile)
• Optimized Signal-to-Noise Ratio & Large Dynamic Range of Detection
• Wide Wavelength Range (190 - 1000 nm) & Ultra-High Resolution
• Physically Valid Model (FB & RCWA)• User-Friendly, Proprietary Software
The n&k OptiPrime-CD’s thin film applications cover both current and next generation thin film measurement demands for R&D and production: Ultra Thin Films and Residual Layers, Multi-Layer Stacks, Inhomogeneous Films, 193 nm and 248 nm ARCs and Resists, Low-ĸ Films, High-ĸ Films, and films deposited on practically any substrate.
Thin Film Application Examples
Light Source
Vis UV
Reflectance (R) Detector Polarizer
Sample
R O U G H P O L Y - S i O N S i O 2
• The wide wavelength range (190 - 1000 nm) of the OptiPrime-CD is needed in order to simultaneously measure the surface roughness and film thickness values
• The data is sensitive to the n and k values of the Poly-Si layer, which can be measured to determine the silicon properties (from amorphous to crystalline)
SurfaceRoughness (Å)
Poly-SiThickness (Å)
SiO2Thickness (Å)
Red 32 18245 505Green 57 15078 622Blue 85 21330 765
Spectra
SiO2
Silicon Substrate
Poly-Si (with Surface Roughness)
Wavelength (nm)
0
20
40
60
80
100
200 300 400 500 600 700 800 900
Rs (%
)
0
Poly-Si/SiO2/Si: Three Samples
1000
C O M P L E X M U L T I - L A Y E R F I L M S T R U C T U R E
• Complex multilayer film stacks can be measured with the OptiPrime-CD
• Super structures, with sets of repeating layers, can be fully modeled in the analysis software
• Film stacks containing over 80 layers have been successfully measured
3000 Å SiO2
1 µm SiNx
250 Å SiO2
15 µm Silicon1.5 µm SiO2
Silicon Substrate
300 Å Oxide
800 Å SiNx
100 Å SiO2
Silicon Substrate
{10 Pairs
Oxide / SiNx(20 Layers)
0
20
40
60
80
100
200 300 400 500 600 700 800 900
Rs (%
)
Wavelength (nm)1000
Rs-exp Rs-cal
0
20
40
60
80
100
200 300 400 500 600 700 800 900
Rs (%
)
Wavelength (nm)1000
Rs-exp Rs-cal
U L T R A T H I C K P H O T O R E S I S T
• The 1 nm wavelength resolution of the OptiPrime-CD captures all interference fringes for the 65 µm Photoresist, enabling measurement of the film thickness
• Films up to 75 µm thick have been measured using the OptiPrime-CD
65 µm Photoresist
Silicon Substrate
0
5
10
15
20
25
30
800 820 840 860 880 900 920 940 960 980 1000
Rs (%
)
Wavelength (nm)
Rs-exp Rs-cal
0
5
10
15
20
25
30
200 300 400 500 600 700 800 900
Rs (%
)
Wavelength (nm)1000
Rs-exp Rs-cal
OptiPrime-CD
n&k OptiPrime-CD Performance Overview
K E Y Q U A L I T I E S O F O P T I P R I M E - C D
P A T E N T E D R E F L E C T I V E O P T I C S
112 cm x 202 cm x 189 cm770 Kg100 - 240 V, 50/60 Hz, 1ΦVacuum, CDA (for FOUP Load Port)
Dimensions (W x D x H):Weight (unpacked):
Facility Requirements:
P H Y S I C A L C H A R A C T E R I S T I C S
The OptiPrime-CD is an Ultra-High Resolution and Ultra-High Sensitivity Scatterometer with Thin Film Measurement Capabilites. The system utilizes Polarized Reflectance (Rs, Rp) data to determine the optical properties (n and k), and thicknesses of thin films and critical dimensions (depth, CDs, and profiles) of the structures being analyzed. This fully-automated system can be configured for various size wafers (300 mm (12”), 200 mm (8”), 150 mm (6”)) for a large variety of semiconductor applications. Raw reflectance data is acquired over a wide wavelength range (190 – 1000 nm) with optimized signal-to-noise ratio, resulting in the capability of the OptiPrime-CD to characterize increasingly smaller features of current and next generation products.
The n&k software combines the Forouhi-Bloomer (FB) equations and Rigorous Coupled Wave Analysis (RCWA) to analyze the raw data. The Forouhi-Bloomer (FB) equations, derived from first principles of quantum physics, are universal equations describing the Refractive Index, n, and Extinction Coefficient, k, as functions of wavelength, λ, whereas RCWA determines optical critical dimensions. By combining FB and RCWA, very complex and complicated structures can be readily analyzed.
Also available is the manual-load, and cost-effective counterpart of the OptiPrime-CD, the n&k OptiPrime-CD-M, utilizing the same optical configurations and analysis capabilities, but without the automatic loading system.
M E T H O D O F A N A L Y S I S
Optimized Signal-to-Noise Ratio
• Optimized Polarized Reflectance (Rs and Rp) Data - Wavelength Range: 190 - 1000 nm - Micro-Spot Technology• Can be Configured for 300 mm (12”), 200 mm (8”),
and 150 mm (6”) Wafers• Fully Automated• Based on Patented Reflective Optics that Optimizes the
Signal-to-Noise Ratio• Strong Sensitivity to Sub-Nanometer Structural and
Material Variations - Thickness, n and k (from 190 – 1000 nm)• OCD Metrology for 2-D and 3 -D Structures
(Trenches and Contact Holes) - Depth, CD, Profile• Cognex Pattern Recognition Software• No Re-Alignment Issues Upon Light Bulb Replacement• Modular design – Easy to Maintain and Service• GEM/SECS Communication Interface• SEMI Standard and Third Party Certifications
M E T R O L O G Y P R E R E Q U I S T E S F U L L F I L L E DB Y O P T I P R I M E - C D
S Y S T E M O P E R A T I O N F L O W
Data Acquisition
Analysis
Results
• Optimized Polarized UV-Vis-NIR Reflectance• (Rs and Rp) from 190 - 1000 nm
• Forouhi-Bloomer (FB) Dispersion Equations• Rigorous Coupled Wave Analysis (RCWA)
• Optical properties: n and k from 190 - 1000 nm• Film thickness• OCD metrology (depth, CD, profile)
• Optimized Signal-to-Noise Ratio & Large Dynamic Range of Detection
• Wide Wavelength Range (190 - 1000 nm) & Ultra-High Resolution
• Physically Valid Model (FB & RCWA)• User-Friendly, Proprietary Software
The n&k OptiPrime-CD’s thin film applications cover both current and next generation thin film measurement demands for R&D and production: Ultra Thin Films and Residual Layers, Multi-Layer Stacks, Inhomogeneous Films, 193 nm and 248 nm ARCs and Resists, Low-ĸ Films, High-ĸ Films, and films deposited on practically any substrate.
Thin Film Application Examples
Light Source
Vis UV
Reflectance (R) Detector Polarizer
Sample
R O U G H P O L Y - S i O N S i O 2
• The wide wavelength range (190 - 1000 nm) of the OptiPrime-CD is needed in order to simultaneously measure the surface roughness and film thickness values
• The data is sensitive to the n and k values of the Poly-Si layer, which can be measured to determine the silicon properties (from amorphous to crystalline)
SurfaceRoughness (Å)
Poly-SiThickness (Å)
SiO2Thickness (Å)
Red 32 18245 505Green 57 15078 622Blue 85 21330 765
Spectra
SiO2
Silicon Substrate
Poly-Si (with Surface Roughness)
Wavelength (nm)
0
20
40
60
80
100
200 300 400 500 600 700 800 900
Rs (%
)
0
Poly-Si/SiO2/Si: Three Samples
1000
C O M P L E X M U L T I - L A Y E R F I L M S T R U C T U R E
• Complex multilayer film stacks can be measured with the OptiPrime-CD
• Super structures, with sets of repeating layers, can be fully modeled in the analysis software
• Film stacks containing over 80 layers have been successfully measured
3000 Å SiO2
1 µm SiNx
250 Å SiO2
15 µm Silicon1.5 µm SiO2
Silicon Substrate
300 Å Oxide
800 Å SiNx
100 Å SiO2
Silicon Substrate
{10 Pairs
Oxide / SiNx(20 Layers)
0
20
40
60
80
100
200 300 400 500 600 700 800 900
Rs (%
)
Wavelength (nm)1000
Rs-exp Rs-cal
0
20
40
60
80
100
200 300 400 500 600 700 800 900
Rs (%
)
Wavelength (nm)1000
Rs-exp Rs-cal
U L T R A T H I C K P H O T O R E S I S T
• The 1 nm wavelength resolution of the OptiPrime-CD captures all interference fringes for the 65 µm Photoresist, enabling measurement of the film thickness
• Films up to 75 µm thick have been measured using the OptiPrime-CD
65 µm Photoresist
Silicon Substrate
0
5
10
15
20
25
30
800 820 840 860 880 900 920 940 960 980 1000
Rs (%
)
Wavelength (nm)
Rs-exp Rs-cal
0
5
10
15
20
25
30
200 300 400 500 600 700 800 900
Rs (%
)
Wavelength (nm)1000
Rs-exp Rs-cal
www.nandk.com
Ultra-High Resolution &Ultra-High Sensitivity Scatterometer
with Thin Film Measurement Capabilities
Product Overview Opt iP r ime -CD
®the true measure
®Technology
FULLY AUTOMATED, HIGH THROUGHPUT
OPTICAL METROLOGY SYSTEM FOR
SEMICONDUCTOR APPLICATIONS.
OCD Applications
OptiPrime-CD
n&k OptiPrime-CDOCD Scatterometry Application ExamplesThe n&k OptiPrime-CD’s OCD scatterometry applications cover structures with very large pitches and very small pitches, 2-D and 3-D complex structures including films inside and outside of shallow and deep trenches and contact holes. Because of our patented and unique optical design, n&k Technology offers the highest signal-to-noise ratio and lowest cost of ownership to support your OCD requirement.
696 nm
8404 nm
959 nm
497 nm
3128 nm
296 nm1008 nm
P R O F I L E C O M P A R I S O N W I T H F I B A N D X - S E M
CrossSection
n&kResults
SiO2 on Si Trench SOI Trench (Flared CD Bottom)
124 nm
1415 nm
252 nm
985 nm
Poly Recess Trench
2 - D C O M P L E X S T R U C T U R E
n&k Results - Cross Sectional View Experimental Spectra Showing DistinctRs and Rp Polarized Spectra
Si-Rich Nitride
Poly-Si
SiO2SiN
Si
31 nm
99 nm
11 nm8 nm6 nm28 nm
67 nm
33 nm
26 nm
Rs-exp Rp-exp
0
10
20
30
40
50
60
200 300 400 500 600 700 800 900Wavelength (nm)
Rs &
Rp
(%)
1000
3 - D A S Y M M E T R I C E L L I P T I C A L H O L E S
SiO2
Experimental Spectra Showing DistinctRs and Rp Polarized Spectra
60
Rs &
Rp
(%)
0
10
20
30
40
50
190 300 400 500 600 700 800 900 1000Wavelength (nm)
Rs-exp Rp-exp
CD (Y)
CD (X)
n&k Results - Top View Cross Sectional View
155 nm
44 nm54 nm
123 nm
SiON
Pitch (X) = 300 nm, Pitch (Y) = 300 nmCD (X) = 160 nm, CD (Y) = 125 nm
Si
Poly-SiSiN