Millimetre-wave solutions for 5G backhaul
Mike Geen
1
© Filtronic 2017
Summary
• The Mobile Backhaul Background• Fixed wireless bands and available BW
• Use cases
• The impact of 5G
• Spectrum availability
• Increasing capacity• mm-Wave transmission characteristics
• Modulation order vs channel width vs multichannel
• mm-Wave technology overview• Semiconductors
• mm-Wave module construction
• mm-Wave transceiver design• Key features
• Importance of detailed device characterisation
• Key components
• Conclusions and further information
2
© Filtronic 2017
3www.filtronic.com
Basic microwave backhaul
“……. the backhaul portion of the network comprises the intermediate links between the core network, or backbone networkand the small subnetworks at the "edge" of the entire hierarchical network”.
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© Filtronic 2017
Backhaul Media
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Typically costs between £30,000 and £80,000 per km to lay new fibre.Often impossible to lay new fibre where it is needed.
Optical Fibre installation tool Microwave installation tool
© Filtronic 2017
Backhaul spectrum
www.filtronic.com
• In the traditional bands there are a number of narrow channels spread between 6 and 42GHz. The total bandwidth available for mobile backhaul below 42GHz is just 15GHz. This now heavily used and expensive licences are required to operate in these bands.
• In contrast, the millimetre wave bands will provide an additional 21GHz of bandwidth in large chunks allowing very high data rates to be achieved.
5
© Filtronic 2017© ETSI 2016. All rights reserved
6
© ETSI 2016. All rights reserved
Area Traffic
Capacity
10 Mbps/m2
Ultra Dense
Tera Cell
Connections
1,000KConnections
/ Km2
Mobility
500km/hHigh-speed
railway
Throughput
10Gbps/ connection
Latency
1 msE2E
Latency
5G
100Mbps 10K 350Km/h30~50ms Small Cells
LTE
GA
P 30~50x 100x 100x 1.5x Densification
Diversified challenges and gaps for 5G
7
© Filtronic 2017
Pressure on spectrum from 5G mobile access
• The mobile industry is now paving the way towards the standardization of the fifth generation of mobile telecommunications technology. 5G services intend to offer higher efficiency and significantly faster mobile data services.
• To achieve the target of 10Gbits peak download capacity requires several GHz of contiguous spectrum – (>1GHz per operator)
• Spectrum above 6 GHz now under consideration for 5G to provide wider bandwidth channels to support higher volume data communication to wireless devices.
• Ofcom commissioned a study which identified top 5 bands as candidates for 5G – all mm Wave
• Ofcom subsequently also identified lower frequency bands although these may not offer sufficient bandwidth
• Similar work ongoing with ITU and FCC
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Source; Ofcom 5G and Future Technologies presentations: http://stakeholders.ofcom.org.uk/spectrum/spectrum-events/5g-future-technology/ Quotient Associates - 5G Candidate Band Study: http://stakeholders.ofcom.org.uk/binaries/consultations/above-6ghz/qa-report.pdf
© Filtronic 2017
5G mobile access will create challenges for mobile backhaul
• Potential threat to existing fixed service bands - the allocation of bands above 6GHz for 5G (deployments after 2020), can endanger the capability of operators to properly operate backhaul networks for 3 and 4G
“All discussions about allocation of spectrum for 5G must consider the needs of the operators for backhaul, current (3 and 4G) and future (5G)”*
“The allocation of spectrum for 5G cannot be separated by the allocation of sufficient and suitable spectrum to deploy the backhaul network” *
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* Renato Lombardi – ETSI mWT ISG Chairman.
© Filtronic 2017
Summary
• The Mobile Backhaul Background• Fixed wireless bands and available BW
• Use cases
• The impact of 5G
• Spectrum availability
• Increasing capacity• mm-Wave transmission characteristics
• Modulation order vs channel width vs multichannel
• mm-Wave technology overview• Semiconductors
• mm-Wave module construction
• mm-Wave transceiver design• Key features
• Importance of detailed device characterisation
• Key components
• Conclusions and further information
10
© Filtronic 2017
Mobile backhaul today
11© ETSI 2016. All rights reserved
11
© Filtronic 2017 12© ETSI 2016. All rights reserved 12
© Filtronic 2017 13© ETSI 2016. All rights reserved 13
© Filtronic 2017 14
• Ten different portions of spectrum are available (when some contiguous portions are considered), from 92 to 200GHz, allocated primarily to Fixed Service, covering almost 54% of the whole band under consideration (92-200GHz).
• More than 30GHz of spectrum available in total in bands ranging from 1 GHz to 12.5 GHz:
© ETSI 2016. All rights reserved 14
© Filtronic 2017 15
• The rain attenuation in W-band and D-band can be derived from the figure below. It should be noted that the rain attenuation of D-band is around 2dB larger than E-band. In addition it should be noted that the rain attenuation in D-band is almost flat.
• Compared to V-band, both W and D-band, similarly to E-band, are in the part of spectrum not affected by Oxygen absorption peaks
• Gas attenuation, is 1 to 2dB/km in D-band. This is not a dominant factor for the link distance limitation.
• The gas attenuation in D-band is almost flat. In W-band it’s lower than 1 dB/km
• System simulations undertaken within the ETSI mWT ISG suggest link distances of several hundred metres are practical at D band frequencies with comparable antenna sizes to E Band
© ETSI 2016. All rights reserved
© Filtronic 2017 16
Rain Attenuation
• ~80% of the Continental US and most of Western Europe falls into rain zone K and below.
• To operate at a 99.99% availability level, a radio system’s fade margin must be designed to withstand a maximum rainfall rate of 42 mm/hour
• Equates to ~16dB/km loss at 86GHz compared to ~11dB/km at 40GHz
• E band Antennas give 6dB more system gain than at 40GHz for a given aperture
© Filtronic 2017
Increasing capacity - Modulation vs BW
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• Doubling channel width has 3dB impact on C/N at Rx and therefore range• Doubling data rate through modulation order has more severe impact on min C/N required to achieve error free
operation:• 7dB impact QPSK to 16 QAM, • 12dB impact 16QAM to 256QAM and • 12 dB impact 256QAM to 4096 QAM
© Filtronic 2017
Modulation Order and E-band Link Range
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Tx
12 to 32dBm 43dBi
Gain = 𝜋2 𝑑2
λ2ε
Ga=
43dBi
Rx
NF=
7dB
Free space loss=
20log(4πd/λ)
131dB for d=1km,
145dB for d=5km
50dBi 60cm Antenna will increase range by approx. 40% to 60% depending on power, modulation & rain fade
PA back off required at higher orders to ensure linearity and mask compliance
QPSK
16QAM
256QAM
© Filtronic 2017
Increasing the data rate
• Higher order modulation• Conserves Spectrum
• Diminishing returns for data rate* and severe impact on system gain
• Places severe demands on phase noise, PA linearity, Gain flatness, IQ amplitude and phase matching (some of these can be mitigated to some extent within the modem)
• 256 QAM readily achievable and just 512QAM possible with using available components.
• Wider channels• Consumes spectrum
• Increases demands on base band A/Ds D/As and diff amps
• Tx and Rx gain flatness requirements more sever
• Less impact on link budget
• Multi channel systems – XPIC, LOS-MIMO, Multiband• Recent published results: 40 Gbps over 4.2km , 36Gbps over 10km
• Consumes spectrum
• Higher cost –• Multiple transceivers,
• Additional passive components; multiplexers OMTs polarisers etc
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*symbol rate =log2 of QAM orderELVA-1 http://www.prweb.com/releases/2017/04/prweb14269512.htm
© Filtronic 2017
Summary
• The Mobile Backhaul Background• Fixed wireless bands and available BW
• Use cases
• The impact of 5G
• Spectrum availability
• Increasing capacity• mm-Wave transmission characteristics
• Modulation order vs channel width vs multichannel
• mm-Wave technology overview• Semiconductors
• mm-Wave module construction
• mm-Wave transceiver design• Key features
• Importance of detailed device characterisation
• Key components
• Conclusions and further information
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© Filtronic 2017
Semiconductor technology status
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• GaAs
• Highly integrated single chip receivers and medium power transmitters available from several vendors
• Power amplifiers to 28dBm Psat demonstrated with commercial 0.1um pHEMT Foundry (WIN)
• GaAs mHemt processes have demonstrated 2dB NF in E band (BAe 50nm mHEMT)
• InP <2.5dB NF demonstrated with 0.1um InP HEMT (Northrop Grumman)
• GaN PAs with Psat > 30dBm to 100GHz demonstrated (HRL 0.14um GaN on SiC)
• InGaP/GaAs HBT – Low phase noise VCOs -95dBc/Hz at 1MHz after multiplication to 86GHz
• SiGe First generation (130nm, ~250GHz fT) highly integrated chips available. Power 12dBm to 18dBm (Psat), Noise figure 8 dB to 11dB. (up-to 16dB over temperature). Phase noise ~ -83 dBc/Hz. Well suited to 60GHz small cell and WiGig
• BiCMOS – PAs reported up to 20dBm on 40nmCMOS. NF similar to SiGe. mmWave CMOS Still at development phase – very high initial investment so will require very high volume application.
© Filtronic 2017 22
2W E Band Power Amplifier
Filtronic Cerus Power Amplifier
• OIP3 39dBm• 18dB gain• Integrated power detector• 40x40x47mm• 4V, 3.6A
• E Band Waveguide is small• Efficient power combining
therefore possible in a compact outline
© Filtronic 2017
RF Analog Semiconductor Technologies Trends
• Compound semiconductors are essential for high performance systems
• Highly integrated GaAs chip sets available now – relatively low initial investment makes these well suited to backhaul volumes
• Si based technologies offer a good solution for short reach systems but demand high volumes to justify initial investment
• SiGe /GaAs combinations achieving usable levels of Macro cell performance.
• Phase noise currently a major limitation for fully integrated SiGe– Use of external low noise VCO required For reliable operation with high order modulation,
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RF –Semitechnology
Use
Cases
Mac
ro
Ce
ll
Bac
khau
l
Mac
ro
Ce
ll
Fro
nth
aul
Smal
l
Ce
ll
Bac
khau
l
Smal
l
Ce
ll
Fro
nth
aul
Fixe
d B
B
Wir
ele
ss t
o
Ho
me
..
Ne
xt
gen
. (5
G)
SiGe + GaAs
2016 Over time2020
BiCMOS
CMOS
GaAs
SiGeGaAs
GaAs BiCMOS *
GaN (PA)
BiCMOS
CMOSSiGe
GaAs
SiGeGaAs
BiCMOS
CMOS
BiCMOSCMOS
GaN
BiCMOS *
GaN (PA) InP/mHEMT (LNA)
InP/mHEMT (LNA)
InP
* Up/Down conversion – III-V PA/LNA
To>3000m
16 to 256 QAM
250 to 2000MHz CS
1 to 10Gbps (with XPIC/MIMO)
› To>300m
› QAM64+
› typ.500MHz CS
› >1Gbps
› (Steerable low gain antennas)
› 50-200m
› QPSK,16QAM
› >1GHz CS
› >1Gbps
50-200m
mod TBA
>1GHz CS
To 10Gbps
© Filtronic 2017
D Band Semiconductor Status
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130 to 134 141 to 148.5 GHz 151.5 to 164 GHz 167 to 174.5 GHz
90nm SiGe Bi’ 140GHz 6dB NF 22 dBm Psat
65nm CMOS 140GHz PA4dBm Psat
100nm InGaAs mHEMT 155 GHz PA 11dBm P1dB
100nm InP p HEMT 170GHz PA 13dBm Psat
35nm InP p HEMT 185GHz LNA 4dB NF
50nm InGaAs m HEMT 210GHz LNA 4.8dB NF
130nm SiGe BiCMOS 148GHz PA 4.5dBm Psat
• All proposed channel agreements can be supported with III-V technology• Si based technology currently only applicable to 160GHz (SiGe) and 140GHz (CMOS)• Note, there are no COTS devices currently available
55nm SiGe BiCMOS 160GHz PA 10dBm Psat
.
© Filtronic 2017
mmWave assembly technology
• Packaged mmWave die to allow SMT assembly are appearing in form of SIP/ MCMs, chip scale BGAs and flip chip die, however, any form of packaging will impact the performance – up to 2dB loss in typical plastic BGA. Also concerns over thermal impedance and reliability of flip chip PAs
• FBL has in house automatic die attach and wire bond capability to allow direct integration into microwave assemblies to achieve the highest level of performance without the need for the addition complexity and cost of a packaging.
• Hybrid construction gives ability to mix and match technologies e.g. Quartz filters and printed micro strip components – plus SMT components.
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© Filtronic 2017 26
0 20 40 60 80 100
Frequency (GHz)
s_parameters
-5
-4
-3
-2
-1
0
86 GHz-2.936 dB
86 GHz-1.55 dB
DB(|S(2,1)|)
Ribbon
DB(|S(2,1)|)
Wire
Assembly Challenges 1
Manual wire / ribbon bonding
MMIC to MMIC connections
© Filtronic 2017 27
Bond compensation
Nominal case:- 300um long
reduction in thru loss
Improvementin return loss
Assembly Challenges 2
Possible to apply compensation but still subject to assembly tolerance and variations in bond length
© Filtronic 2017
Die & Component Placement
• Fully automated component placement equipment enables tightly controlled, accurate and repeatable die placement
• Vacuum picked from waffle pack or reels
• X/Y placement accuracy +/- 12 microns
• Automated recognition system for alignment of fiducials and components
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© Filtronic 2017
Summary
• The Mobile Backhaul Background• Fixed wireless bands and available BW
• Use cases
• The impact of 5G
• Spectrum availability
• Increasing capacity• mm-Wave transmission characteristics
• Modulation order vs channel width vs multichannel
• mm-Wave technology overview• Semiconductors
• mm-Wave module construction
• mm-Wave transceiver design• Key features
• Importance of detailed device characterisation
• Key components
• Conclusions and further information
29
© Filtronic 2017
10Gbps E Band Outdoor unit
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Filtronic Orpheus Transceiver
Filtronic Orpheus based ODU reference design
© Filtronic 2017
E Band Transceiver Key Features
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Parameter Main System impact Typical specRef to Antenna port
Sate of the Art
Tx Linearity Mask complianceModulation order
IMD3 -20dBc @ 20dBm OIP3 27dBm
OIP3 >36dBm
Phase Noise Modulation order -92dBc/Hz@100kHz-112dBc/Hz@1MHz
-98dBc/Hz @100kHz
Rx Noise Figure
Rx Sensitivity - Range <9dB <4dB
Tx Power Max Range Psat >23dBm Psat 35dBm
Rx Linearity Min Range, CWinterferer immunity
-32dBc@-23dBm IPPower
-
Tx Noise floor Mask Compliance <(Pout-77) dBm/MHzwithin 2.5xCS
-
Tx/Rx BB Bandwidth
Data Rate 3000 MHz ADC and BB diff Amplimitation
Tx Power control
System Dynamic Range
30dB (settable within ±1dB at top of range)
-
On board micro manages channel setting and application of calibration data for Txpower monitor, LO cancelation, sideband suppression, temperature compensation, etc.
© Filtronic 2017 32
ETSI E-Band Mask
Shown for 2GHz channel spacing
Note; Mask is relative, noise floor must therefore decrease dB for dB with Tx PowerRef ETSI EN 302 217-2 V3.0.8 (2016-06)
The noise floor attenuation depends on the CS
© Filtronic 2017
Example Tx Line-up
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• All element models based on measured data
• Data files contain the mmW performance at numerous bias points
• Line-up actively adjusts individual elements to provide modelled performance at defined Tx output power (reflecting real-world operation)
mmW WGLaunch
Diplexer etc
BasebandInput
E-Band LOInput
© Filtronic 2017
Sensitivity to the linearity of Tx chain elements
34
Tx Chain sensitivity to PA linearity
Tx Chain sensitivity to modulator linearity Tx Chain sensitivity to MPA linearity
Parameter Min PA Requirement
Comment
Gain 23dBPsat 26dBm Transceiver Linier Pout
20dBmOIP3 at 20dBm
32dBm Min required to ensure transceiver OIP3 of 27dBm.
OIP3 at 17dBm
32dBm
OIP3 at 5dBm
27dBm
PA dominates Tx Chain linearity
Pout 20dBm
Pout 20dBm Pout 20dBm
© Filtronic 2017 35
IM3 measured on PAs from four manufacturers
32dBm
PA 1
PA 3
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
5 10 15 20 25 30
IMD
3 (
dB
c)
Output power (dBm)
DUT2 Fixed Vg -414mV
71.0
73.5
76.0
OIP3
OIP3 32dBm
36dBm
PA 2
PA 4
© Filtronic 2017 36
IMD3 vs Power vs Bias conditions
© Filtronic 2017 37
60 70 80 90
Frequency (GHz)
gAPZ0052_DUT1_NoRibbon
-30
-20
-10
0
10
20
30
86 GHz81 GHz
DB(|S(2,1)|)gAPZ0052_DUT1_Vd 3p3V_Vg1 n351mV_Id1 350mA_Vg2 n350mV_Id2 400mA_05Dec16
DB(|S(1,1)|)gAPZ0052_DUT1_Vd 3p3V_Vg1 n351mV_Id1 350mA_Vg2 n350mV_Id2 400mA_05Dec16
DB(|S(2,2)|)gAPZ0052_DUT1_Vd 3p3V_Vg1 n351mV_Id1 350mA_Vg2 n350mV_Id2 400mA_05Dec16
"TYPICAL" s21 spec
min s11 and s22 spec
s21
s22
s11
s-parameters probed on chip vs ribbon bonded
60 70 80 90
Frequency (GHz)
gAPZ0052_DUT1_PlusRibbon
-30
-20
-10
0
10
20
30
86 GHz81 GHz
81.4 GHz21.85 dB
86 GHz-4.478 dB
86 GHz14.34 dB
DB(|S(2,1)|)gAPZ0052_DUT1_Probe Points_Vd 3p3V_Vg1 n354mV_Id1 350mA_Vg2 n353mV_Id2 400mA_07D
DB(|S(1,1)|)gAPZ0052_DUT1_Probe Points_Vd 3p3V_Vg1 n354mV_Id1 350mA_Vg2 n353mV_Id2 400mA_07D
DB(|S(2,2)|)gAPZ0052_DUT1_Probe Points_Vd 3p3V_Vg1 n354mV_Id1 350mA_Vg2 n353mV_Id2 400mA_07D
60 70 80 90
Frequency (GHz)
gAPZ0051_DUT1_noRibbon
-30
-20
-10
0
10
20
30
76 GHz71 GHz
DB(|S(2,1)|)gAPZ0051_DUT1_Vd 3p3V_Vg1 n339mV_Id1 275mA_Vg2 n321mV_Id2 400mA_05Dec16
DB(|S(1,1)|)gAPZ0051_DUT1_Vd 3p3V_Vg1 n339mV_Id1 275mA_Vg2 n321mV_Id2 400mA_05Dec16
DB(|S(2,2)|)gAPZ0051_DUT1_Vd 3p3V_Vg1 n339mV_Id1 275mA_Vg2 n321mV_Id2 400mA_05Dec16
"TYPICAL" s21 spec
"MIN" s11 spec
"MIN" s22 spec
s21
s11
s22
60 70 80 90
Frequency (GHz)
gAPZ0051_DUT1_plusRibbon
-30
-20
-10
0
10
20
30
76 GHz71 GHz
74.7 GHz-4.729 dB
76 GHz16.21 dB
DB(|S(2,1)|)
gAPZ0051_DUT1_Probe Points_Vd 3p3V_Vg1 n345mV_Id1 275mA_Vg2 n326mV_Id2 400mA_07D
DB(|S(1,1)|)
gAPZ0051_DUT1_Probe Points_Vd 3p3V_Vg1 n345mV_Id1 275mA_Vg2 n326mV_Id2 400mA_07D
DB(|S(2,2)|)
gAPZ0051_DUT1_Probe Points_Vd 3p3V_Vg1 n345mV_Id1 275mA_Vg2 n326mV_Id2 400mA_07D
s11
s21
s22
© Filtronic 2017
20
21
22
23
24
25
26
27
28
29
30
1 2
P1
dB
(d
Bm
)
DUT#
71
73.5
76
20
21
22
23
24
25
26
27
28
29
30
1 2
Psa
t (d
Bm
)
DUT#
71
73.5
76
Fixed Id Fixed Vg
Effect of ribbon bonds on Power 71 to 76GHz
38
DUT1 (with ribbon bonds) DUT1 (with ribbon bonds)
fixed Vg
fixed Vgfixed Id fixed Id fixed Vg
Fixed Id Fixed Vg
20
21
22
23
24
25
26
27
28
29
30
1 2
Psa
t (d
Bm
)
DUT#
71
73.5
76
fixed Vg
20
21
22
23
24
25
26
27
28
29
30
1 2
P1
dB
(d
Bm
)
DUT#
71
73.5
76
Fixed Id Fixed IdFixed Vg
DUT2 (probed on chip)DUT2 (probed on chip)
© Filtronic 2017
LO Sources
• LO signals generated within the Tx and Rx modules using internal PLL and low phase noise GaAs VCOs
• To reduce power consumption, VCO outputs can be shared via power splitters between same frequency RF modules
• RF filtering suppresses unwanted products generated by the VCOs and multiplication stages
• High stability TXCOs employed
• Typical Phase noise vs carrier offset after multiplication (at E-Band) is defined in the table below
• Field proven to robustly support 256QAM operation
39
Carrier offset
Phase Noise (dBc/Hz)
1KHz 50
10kHz 55
100kHz 95
1MHz 115
10MHz 135
100MHz 140
© Filtronic 2017
Filters / Multiplexers
• Filtronic has long experience designing and manufacturing E-band filters, diplexers and multiplexers
• In-house developed software “Network Synthesis” for initial filter synthesis
• AWR Microwave Office to create ideal filter model
• Keysight EMPro to create advanced 3D EM filter model
• Manufacturing tolerances need to be considered at the design stage
• The plots below show the yield analysis based on +/-10um (left) and +/-5um (right) machining and plating tolerances
• At D Band manufacturing tolerances of +/-2um are required
• Multiplexers allow simultaneous multi-channel operation for efficient use of the E-band spectrum, since WG dimensions are small at E Band it is possible to incorporate these into a very compact assembly
• For example, a 2x4 channel multiplexer system incorporating a polariser can facilitate 4 simultaneous transmit/receive links each operating with a 2GHz BW
• Plot showing E-band multiplexer simulation (green) versus measured performance (black/red)
• In addition, Filtronic can integrate receivers directly onto the multiplexer to reduce weight and insertion loss leading to lowest possible noise figure solutions
• Filtronic employs the following tool chain to robustly simulate filter/multiplexer performance:
40
69 74 79 84 88
Frequency (GHz)
epl_rect_post_pw1_pl1p6_php57
-80
-60
-40
-20
0
DB(|S(1,1)|)dip_epl_rect_post_pw1_pl1p6php57_jnl1p0
DB(|S(1,2)|)dip_epl_rect_post_pw1_pl1p6php57_jnl1p0
DB(|S(1,3)|)dip_epl_rect_post_pw1_pl1p6php57_jnl1p0
DB(|S(1,1)|)dip_epl_rect_post_pw1_pl1p6php57_jnl1p0_eq_impedance
DB(|S(1,2)|)dip_epl_rect_post_pw1_pl1p6php57_jnl1p0_eq_impedance
DB(|S(1,3)|)dip_epl_rect_post_pw1_pl1p6php57_jnl1p0_eq_impedance
69 74 79 84 88
Frequency (GHz)
epl_rect_post_pw1_pl1p6_php57
-80
-60
-40
-20
0
DB(|S(1,1)|)dip_epl_rect_post_pw1_pl1p6php57_jnl1p0
DB(|S(1,2)|)dip_epl_rect_post_pw1_pl1p6php57_jnl1p0
DB(|S(1,3)|)dip_epl_rect_post_pw1_pl1p6php57_jnl1p0
DB(|S(1,1)|)dip_epl_rect_post_pw1_pl1p6php57_jnl1p0_eq_impedance
DB(|S(1,2)|)dip_epl_rect_post_pw1_pl1p6php57_jnl1p0_eq_impedance
DB(|S(1,3)|)dip_epl_rect_post_pw1_pl1p6php57_jnl1p0_eq_impedance
© Filtronic 2017
Transmitters Receivers and PAs
41
• Filtronic transmitters and receivers offer excellent gain, gain control and linearity
• Integrated VCOs deliver market leading phase noise and reduce size & weight
• On-board microcontroller and pre-calibration takes care of the Tx output power regardless of the requested frequency, power or ambient temperature
• Receiver modules developed employing ultra-low noise figure MMICs
• Cerus 2W E-Band PA (can be scaled to >3W) proven to deliver high gain and excellent linearity. Demonstrated 32dBm linear power at Mobile World Congress, Barcelona March 2017
© Filtronic 2017
Multichannel Long Range Transceivers
42
Parameter Spec
OM
T/Po
lari
ser Frequency Range 71-86GHz
Insertion Loss <0.8dB
XPD >30dB
Dimensions 20x20x20mm
Weight <25g
Mu
ltip
lexe
r Passband partitioning To suit customer requirements within range 71-76GHz/81-86GHz
Insertion Loss*4 <0.8dB
Return Loss *4 >14dB
Channel Isolation(Tx-Tx or Rx-Rx)*4
>25dB
Channel Isolation (Tx to Rx)
>90dB
Dimensions (example for 4 channels)
100x100x6mm
Weight (example for 4 channels)
<200g
• The specification below presents one possible system architecture.
Parameter Spec
Rec
eive
rs Number of Receivers Multiple
Rx Centre Frequency in Range
71-76GHz/81-86GHz *1
Noise Figure <4dB
RF Bandwidth per Rx 2GHz
Gain 25dB
Gain Adjustment Range 10dB
Dimensions (example for 4 channels)
100x100x20mm
Weight (example for 4 channel)
<400g
Total Power Consumption ~4W
Parameter Spec
Tran
smit
ters Number of Transmitters Multiple
Tx Centre Frequency in Range
71-76GHz/81-86GHz *1
PSAT >33dBm
P1dB >31dBm
Gain ~35dB
Gain Adjustment Range >10dB
Dimensions (example for 4 channels)
100x100x20mm
Weight (example for 4 channels)
<900g*2
Total Power Consumption per channel
~18W*2
*1 Support for multiple channels and cross polarisation.*2 Weight and power consumption dependent on PA output power requirements. *3 Dependent upon antenna gain, dc power availability etc., higher power solution can be designed for ground based system.*4 Example shown for 2GHz channels separated by 3GHz.
© Filtronic 2017
Conclusion
• Wide bandwidth mm Wave radios provide the solution to the increasing backhaul capacity demands of next generation communications system
• Fiber like capacity; 10Gbps in a single channel, 40Gbps in multichannel configurations and with sufficient Tx power, E-band links can operate at high capacity over 10km.
• New spectrum allocations above 95GHz will provide a path to even higher capacities in the future
• Filtronic’s proven E-band technology platform has been developed to enable a rapid, low risk transition from high performance short range terrestrial links to the highest capacity long range links
THANK YOU
43
© Filtronic 2017
An analogy?
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• The population of London grew dramatically in the 19th century but until 1865 the sewage system comprised of 200,000 cesspools connected to creeks and streams flowing into the river Thames, a shared resource providing transport and access to city.
• Joseph Bazalgette realised the flow rate of the river was insufficient to cope and a dedicated high capacity network was needed. He subsequently designed and oversaw the construction of 82 miles of underground brick main sewers to intercept outflows from 1,100 miles of new street sewers.
• When planning the network he took the densest population, gave every person the most generous allowance and came up with a diameter of pipe needed, then doubled it: had he not done so the system would have overflowed in the 1960s, rather than coping, as it has until the present day.
• The demand for telecom capacity is less easy to predict.• 5G seems to be aiming to deliver the equivalent of a main line sewer to every
person!
© Filtronic 2017
Further Information
The following slides provide information on:
• The ETSI millimetre wave Transmission Industry Specification Group
• Filtronic Broadband • Company background
• Design and manufacturing capabilities
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About Filtronic
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• Filtronic was established 1977 currently ~200 employees
• World leader in the design and manufacture of a broad range of customised RF, microwave
and millimetre-wave components and subsystems.
• Two Business Units:
• Filtronic Wireless designs and manufactures RF filters, combiners, TMAs, microwave subsystems and antennas for the mobile telecommunications industry, focusing on equipment for OEMs and network operators. HQ in Leeds with design centres in US and Sweden. Manufacturing is carried out in Suzhou, China
• Filtronic Broadband designs and manufactures 60 to 90GHz millimetre-wave products for mobile broadband backhaul, defence applications as well as providing build to print manufacturing at its state of the art, highly automated facility in Sedgefield Co Durham
• Filtronic has demonstrated world class product quality and reliability, with over 300,000
transceiver modules and 700,000 filter products successfully deployed in the field.
• FBL is a device agnostic supplier of mm-Wave transceivers to OEMs offering high specification,
competitively priced modules that reduce customers time to market
• We brings value to the semiconductor suppliers and OEM customers by acting as a technology
enabler
• Our target customers are focused on supplying system level products to operators and have
retreated from transceiver design and manufacture
© Filtronic 2017
Filtronic Background
• Filtronic Broadband Limited is a well established world leading designer and manufacturer of microwave & millimetre-wave products for the mobile backhaul and adjacent markets. Supplying customised turnkey solutions and providing Contract Manufacturing Services to the European Aerospace and Defence industry.
• Filtronic product range includes transceiver modules, multi-chip transceiver packages in Surface Mount Technology (SMT), diplexers and filter products covering a wide frequency range from 4GHz to 110GHz including V-band (57GHz to 66GHz), E-band (71GHz to 76GHz & 81GHz to 86GHz) and W-band (91GHz to 95GHz).
Highlights
• 7 year track record in development of market leading, mmWave modules: Filtronic has an ongoing investment programme in mmWave technology which is delivering market leading TR modules to major OEMs.
• Established volume supplier of microwave & mmWave transmit and receive modules: Filtronic has extensive in-house design and manufacturing capability for microwave modules covering frequencies from 4-86GHz.
• Vertical cost effective solutions: Benefit of investment of over $5M in R&D including our own highly competitive MMIC chipsets.
• Highly integrated architectures: Filtronic designs and manufactures highly integrated microwave sub-systems for mobile backhaul and for military radar applications. A typical module includes full transmit and receive microwave front end electronics together with signal sources, LO synthesisers and baseband conversion. We can also include integrated no tune, low-loss diplexers/filters.
• Long established automated test facility. FBL has made substantial investments in automated microwave test over the frequency range 5GHz to 90 GHz.
• Filtronic is an existing approved vendor to major OEMs and aerospace equipment manufacturers.
• High reliability demonstrated through high volume field deployments.
• Over 300,000 Microwave modules, over 25,000 millimetre-wave modules and over 500,000 SMT multichip modules currently in service in mobile backhaul networks around the world.
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© Filtronic 2017
Filtronic E-Band Product Overview
• Filtronic design and manufacture E-Band system solutions for multiple applications with high levels of field reliability demonstrated
• Filtronic’s current generation E-Band transceivers operate up to 256QAM and have been proven to 10Gbps in single 2GHz channels
• Innovative architectures with a focus on high levels of integration minimise size, weight and power and enable deployment of multi-channel systems in a small envelope
• Recent focus on pushing the boundaries of performance at E-band has resulted in the development technology suitable for transmit powers >3W and receive noise figures <4dB
• Latest Filtronic E-band technology solutions are particularly appropriate for long range high capacity communications links such as High Altitude Psuedo Satellites
• Vast experience in the highly competitive backhaul market ensures cost effective solutions
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Examples of Filtronic highly integrated E-band transceiver modules Filtronic E-band booster amplifier -Cerus
© Filtronic 2017
Test Solutions• High speed production test systems to 90GHz• Automated measurement and calibration of Tx Power and Rx Gain
• Two tone IMD 3 on Tx and Rx• Noise Figure• Rx Gain• Calibration for LO cancellation and sideband suppression• Return Loss• P1dB• Gain Flatness• All parameters can be tested over temperature.
• On wafer test to 110GHz• NF, IMD3, Power, s-parameters• Allows benchmarking of emerging devices• Allows batch wafer acceptance testing in production
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mmWave Test Solutions
© Filtronic 2017
Manufacturing Capability
• Proven track record designing, manufacturing and testing carrier grade mmWproducts – for multiple telecoms OEMs
• 26k mm Wave modules (75% E band) shipped to date making Filtronic largest independent mm-Wave transceiver manufacturer, in the world.
• Manufacturing clean rooms with multiple automated production lines
• Epoxy dispense
• Die & component placement
• Wire bonding
• Auto
• Manual
• Automated test to >90GHz
• Data management
• Supply chain management
• All manufacturing in line with MIL-STD-883
• ISO9001 certified
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© Filtronic 2017
Filtronic mm-Wave and Microwave Services
Full custom design and volume manufacturing and test services for
• E Band transceivers 71 to 86GHz
• V band transceivers 57 to 64GHz
• ODU ready E band link reference designs
• Waveguide Filters, Diplexers and OMTs 6GHz to 110GHz
• GaN High power amplifiers 6 to 11 GHz
• Multichip Modules 6 to 24GHz
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