Download - Ldb Convergenze Parallele_08
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D. Komskii, Physics 2, 20 (2009)
Multiferroic materials: overview and
some perspectives
J. Fontcuberta
Institut de Ciència de Materials de Barcelona, CSIC
Bellaterra, Catalunya, Spain
• Multiple (4) memories and logics
• Electric control of magnetic states (if coupling exists) • Novel optical components • …..
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acknowledgments
2
Barcelona
MAT2011-29269-C03-01, CONSOLIDER CSD2007- 00041
2009SGR-376, 2009SGR-203
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acknowledgments Institute of Physics, Polish Acad.of Sci., Warszawa
M. Wojcik and E. Jedryka (NMR)
Dept. Electrònica. U. Barcelona, Barcelona
S. Estradé and F. Peiró (TEM-EELS)
Lab. Phys. des Solides, UMR-CNRS Orsay, France
F. de la Peña, M. Walls, C. Colliex (S(TEM)-EELS)
ETH Zürich
Claude Ederer (DFT Theory)
Department of Physics, Univ. of Houston, USA
M. Iliev (Raman)
ALBA Synchrotron Light Source, Catalonia, Spain.
A. Barla, E. Pellegrin (XPS, LD)
Laboratorio TASC (Ts ), Italy
F. Bondino, E. Magnano (XPS, LD)
LNESS – Dipartimento di Fisica – Politecnico di Milano, Italy
R. Bertacco (multiferroics)
Consiglio Nazionale delle Ricerche, CNR-SPIN,L’Aquila, Italy
S. Picozzi (DFT Theory, multiferroics)
Laboratoire Structures, Propriétés et Modélisation des Solides,
Ecole Centrale Paris, (France)
B. Dkhil (hight temp XRD)
Institut de Ciència de Materials de
Barcelona, Catalonia, Spain
D. Pesquera
D. Gutierrez
N. Dix
J. M. Rebled
O. Vlasin
Monica Bernal
Mateusz Ścigaj
B. Casals
G. Radaelli (from P. Milano)
I. Fina (now at Halle, Germany)
X. Marti (now at Univ.. Berkeley)
L. Fàbrega
V. Laukin
V. Skumryev
F. Sánchez (PLD)
G. Herranz (MOKE)
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Current research activities • Electronic/structural surface reconstructions in oxides
• Surface orbital filling at La1-xSrxMnO3 & related oxides • 2DEG at interfaces between band-gap insulators
• New Multiferroic materials and devices •Electric and magnetic control of M and P
Magnetic multiferroics (YMnO3, etc) Exchange biased multiferroics Multiferroic bilayers (BTO-CFO) Active multiferroic interfaces
•Double perovskites Bi2MM’O6
• Multifunctional heterostructures on Silicon • Ferroelectrics (Si//BaTiO3) • Magnetics (Si//CoFe2O4) • Hybrid (Si//BaTiO3/CoFe2O4)
• Magnetophotonic materials •Magnetic opals with enhanced Magnetooptic activity
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Current research activities • Electronic/structural surface reconstructions in oxides
• Surface orbital filling at La1-xSrxMnO3 & related oxides • 2DEG at interfaces between band-gap insulators
• New Multiferroic materials and devices •Electric and magnetic control of M and P
Magnetic multiferroics (YMnO3, etc) Exchange biased multiferroics Multiferroic bilayers (BTO-CFO) Active multiferroic interfaces
•Double perovskites Bi2MM’O6
• Multifunctional heterostructures on Silicon • Ferroelectrics (Si//BaTiO3) • Magnetics (Si//CoFe2O4) • Hybrid (Si//BaTiO3/CoFe2O4)
• Magnetophotonic materials •Magnetic opals with enhanced Magnetooptic activity
D. Pesquera et al
Nature Comm. (2012)
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Current research activities • Electronic/structural surface reconstructions in oxides
• Surface orbital filling at La1-xSrxMnO3 & related oxides • 2DEG at interfaces between band-gap insulators
• New Multiferroic materials and devices •Electric and magnetic control of M and P
Magnetic multiferroics (YMnO3, etc) Exchange biased multiferroics Multiferroic bilayers (BTO-CFO) Active multiferroic interfaces
•Double perovskites Bi2MM’O6
• Multifunctional heterostructures on Silicon • Ferroelectrics (Si//BaTiO3) • Magnetics (Si//CoFe2O4) • Hybrid (Si//BaTiO3/CoFe2O4)
• Magnetophotonic materials •Magnetic opals with enhanced Magnetooptic activity
G. Herranz et al
Scientific Rept. (Nature) (2012)
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Current research activities • Electronic/structural surface reconstructions in oxides
•Surface orbital filling at La1-xSrxMnO3 & related oxides • 2DEG at interfaces between band-gap insulators
• New Multiferroic materials and devices •Electric and magnetic control of M and P
Magnetic multiferroics (YMnO3, etc) Exchange biased multiferroics Multiferroic bilayers (BTO-CFO) Active multiferroic interfaces
•Double perovskites Bi2MM’O6
• Multifunctional heterostructures on Silicon • Ferroelectrics (Si//BaTiO3) • Magnetics (Si//CoFe2O4) • Hybrid (Si//BaTiO3/CoFe2O4
• Magnetophotonic materials •Magnetic opals with enhanced Magnetooptic activity
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Current research activities • Electronic/structural surface reconstructions in oxides
• Surface orbital filling at La1-xSrxMnO3 & related oxides • 2DEG at interfaces between band-gap insulators
• New Multiferroic materials •Electric and magnetic control of M and P
Magnetic multiferroics (YMnO3, etc) Exchange biased multiferroics Multiferroic bilayers (BTO-CFO) Active multiferroic interfaces
•Double perovskites Bi2MM’O6
• Multifunctional heterostructures on Silicon • Ferroelectrics (Si//BaTiO3) • Magnetics (Si//CoFe2O4) • Hybrid (Si//BaTiO3/CoFe2O4)
• Magnetophotonic materials •Magnetic opals with enhanced Magnetooptic activity
E. Langenberg et al. Phys. Rev. B (2012)
Bi2NiMnO6
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Current research activities • Electronic/structural surface reconstructions in oxides
•Surface orbital filling at La1-xSrxMnO3 & related oxides • 2DEG at interfaces between band-gap insulators
• New Multiferroic materials and devices •Electric and magnetic control of M and P
Magnetic multiferroics (YMnO3, etc) Exchange biased multiferroics Multiferroic bilayers (BTO-CFO) Active multiferroic interfaces
•Double perovskites Bi2MM’O6
• Multifunctional heterostructures on Silicon • Ferroelectrics (Si//BaTiO3) • Magnetics (Si//CoFe2O4) • Hybrid (Si//BaTiO3/CoFe2O4)
• Magnetophotonic materials •Magnetic opals with enhanced Magnetooptic activity
M. Scigaj, et al, Appl. Phys. Lett. (2013) 9
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Current research activities • Electronic/structural surface reconstructions in oxides
•Surface orbital filling at La1-xSrxMnO3 & related oxides • 2DEG at interfaces between band-gap insulators
• New Multiferroic materials and devices •Electric and magnetic control of M and P
Magnetic multiferroics (YMnO3, etc) Exchange biased multiferroics Multiferroic bilayers (BTO-CFO) Active multiferroic interfaces
•Double perovskites Bi2MM’O6
• Multifunctional heterostructures on Silicon • Ferroelectrics (Si//BaTiO3) • Magnetics (Si//CoFe2O4) • Hybrid (Si//BaTiO3/CoFe2O4)
• Magnetophotonic materials •Magnetic opals with enhanced Magnetooptic activity
M. Scigaj, et al, Appl. Phys. Lett in press
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Current research activities • Electronic/structural surface reconstructions in oxides
• Self-ordered chemical terminations at ABO3 surfaces • Surface orbital filling at La1-xSrxMnO3 & related oxides • 2DEG at interfaces between band-gap insulators
• New Multiferroic materials •Electric and magnetic control of M and P
Magnetic multiferroics (YMnO3, etc) Exchange biased multiferroics Multiferroic bilayers (BTO-CFO)
•Double perovskites Bi2MM’O6
• Multifunctional heterostructures on Silicon • Ferroelectrics (Si//BaTiO3) • Magnetics (Si//CoFe2O4) • Hybrid (Si//BaTiO3/CoFe2O4)
• Magnetooptic Laboratory •Recording magneto-electric images of magnetic and ferroeelectric domains dynamically
Ondrei . Vlasin in progress
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2000. Why magnetic ferroelectric are so-scarce ?
N. Spalding
2003. Enhanced Polarization of BiFeO3 films
Ramesh group.
2003. A new class of Multiferroics: Magnetism drives ferroelectricity.
Kimura (TbMnO3)
Towards dreamed applications:
2006: E-controlled GMR:Exchange biased Ferromagnetic- Multiferroic
V. Laukhin et al (YMnO3/Py)
2007: Multiferroic M-Fe-RAMs:4-state memories
M. Gajeck et al (BiMnO3)
2009: Electric control of spin-polarization: Interface bonding
V. García (BaTiO3/Fe)
The renaissance of multiferroics
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Objectives
Overview the main families of multiferroic materials and the relations between ferroelectric and magnetic orders and their coupling
Some hints for new approaches
Illustrate some potential applications
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Index
Structural trends
Requirements for occurrence of magnetism and ferroelectricity.
The different families of multiferroics.
Potential applications: Electric and magnetic control of M and P
Summary
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Index
Structural trends
Requirements for occurrence of magnetism and ferroelectricity.
The different families of multiferroics.
Potential applications: Electric and magnetic control of M and P
Summary
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Structural trends
ABO3
A
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Structural trends : AMnO3
Hexagonal Orthorhombic
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Index
Structural trends
Requirements for occurrence of magnetism and ferroelectricity.
The different families of multiferroics.
Potential applications: Electric and magnetic control of M and P
Summary
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Magnetism & ferroelectricity
Magnetism: partially filled 3dn states (dx- rule)
Insulating: to sustain polar states
Magnetic order: time reversal symmetry is broken
• Superexchange magnetic interactions: i.e Mn3+-O-Mn3+ : 3d4-2p6-3d4
• Goodenough-Kanamori rules: orbital filling and bond angles
Ferroelectricity: build-in electric dipoles. i.e center of positive and negative charges do not coincide (lack of inversion symmetry)
3d5: Fe3+ : Fe2O3 (AF); BiFeO3 , GdFeO3 (AF)
3d4: Mn3+ : Mn2O3 (AF); LaMnO3 (AF)
BiMnO3 (FM !!)
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Structural trends
Requirements for occurrence of magnetism and ferroelectricity.
The different families of multiferroics.
Potential applications: Electric and magnetic control of M and P
Summary
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Index
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Multiferroic Families
Type-I Multiferroics
Magnetism and Ferroelectricity have independent sources
Typically TCFE >> TN and weak coupling between P and M
P is often large (10-100 mC/cm2)
Type-II Multiferroics
Magnetic order causes ferroelectricity TC
FE < TN,C and strong coupling between P and M
P is much smaller (~0.01 mC/cm2)
Type-III Multiferroics
Domain walls and magnetic excitations Confined response TC
FE ≈ TN,C
Type-IV Multiferroics
Bilayers and Composites of known FE and FM (Magneto/ferro)elastic coupling @ RT
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Type-I Multiferroics
1. Off-centering of 3d0 ions, i.e. BaTiO3
2. Stereochemical activity of lone-pairs of the large A-
ions in ABO3 creating dipoles, while moment
resides at B sites, i.e. BiMnO3 or BiFeO3
3. Geometrically driven ferroelectric, i.e. h-YMnO3
4. Charge ordering: B-O=B’-O-B-O=B´. Dipoles are
formed
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Magneto-Electric coupling
Linear Magnetoelectrics (Cr2O3)
P
H
P M/Ms
TE TC/TN
“Type I” multiferroics (h-YMnO3)
weak ME coupling
P Ms
TN=TE
“Type II” multiferroics (TbMnO3)
can have strong ME coupling
Adapted from Radaelli
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Type-II Multiferroics
1. Ferroelectricity arising from spiral magnetic order.
2. Ferroelectricity in collinear magnetic structures.
3. Electronic ferroelectrics: spin-dependent M-O hybridization.
• Symmetric exchange in collinear AF: P ~ J Si ·Sj HoMnO3
• Antisymmetric exchange in cycloidal AF: P ~ A rij × (Si × Si) TbMnO3
• Spin-dependent p-d hybridization in AF: P ~ A (Si·rij )2rij Ba2CoGe2O7
P P
P
p d
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Couple magnetic moments to ion displacements
J (r)
k M M’
Direct exchange
J (q)
M k M’
Symmetric superexchange
SO coupling (anti-symmetric
superexchange)
Adapted from Radaelli
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Exchange, striction and polarization
Collinear magnetic ferroelectrics
Superexchange striction
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Spin-orbit coupling: anti-symmetric superexchange
S.-W. Cheong & M. Mostovoy, Nature Mater. 6 13 (2007)
H. Katsura et al., PRL 95, 067205 (2005)
P J1
J2
1 2ijr S S p
Vector Coupling – Requires non-
collinearity
i.e. cicloidal antiferromagnets
Adapted from Radaelli
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Magnetic interactions in AMnO3 perovskites
The size of the lanthanide ion occupying the centre of the cage
determines the Octahedra rotations and thus the Mn-O-Mn bonding
angles
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Magnetic interactions in AMnO3 perovskites
A-type E-type
Collinear magnetic order
Non-Ferroelectric
Collinear magnetic order
Ferroelectric
a-a
xis
Ho Er Tm Yb Lu La Ce Pr Nd Pm Sm Eu Gd Tb Dy
Bonding angle
a-axis
b-axis
b-axis
c-ax
is
P
Cycloidal & FE
M. Kenzelmann et al.,
PRL 95, 087206 (2005)
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Type-II Multiferroics: magnetic ferrroelectrics
Y. Tokura et al. Adv. Mater. 2010
E-type : HoMnO3
bc-cycloids : DyMnO3
Symmetric exchange
Pa ~ Si· Sj
Antisymmetric exchange
P ~ eij x (Six Sj)
Pc: bc- cycloids
Pa: ab- cycloids
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Type-III Multiferroics
Multiferroic domain walls
Bloch walls
Néel walls Similar to cycloid
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Type-III Multiferroics: Multiferroic domain walls
A. S. Logginov et al, APL (2008)
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1. Laminar nanocomposites
2. Columnar nanocomposites
Type-IV Multiferroics: Composites FE & FM
(from X. Zheng et al, Science 303, 661 (2004))
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Growth of columnar FE & FM nanocomposites FE
• Unmiscible structures (spinel (FM) and perovskite (FE) ) • High anisotropy of surface energy: ( 001) vs (111)
(111)(001) Spinel
Perovskite
Column Matrix
ColumnMatrix
Zheng et.al, Nano Lett, 6, 1401 (2006)
(111)(001) Spinel
Perovskite
Column Matrix
ColumnMatrix
Zheng et.al, Nano Lett, 6, 1401 (2006)
R. Muralidharan, et al, JAP (2008)
CFO
BFO BFO
STO
100nm
CFO CFO
BFO
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Magnetoelectric coupling in columnar nanocomposites
CoFe2O4/BiFeO3
SrTiO3 (001) 200nm 0 100 200 300 400
0
50
100
150
200
250
mag p
ha
se
(arb
. u
nits
)
X (nm)
SrTiO3 (001) 200nm
MFM, after poling -12V
MFM
0 100 200 300 400
0
50
100
150
200
250
ma
g p
ha
se
(arb
. u
nits
)
X (nm)
E-field control of the CoFe2O4
nanopillars magnetization
Work in collaboration with Univ.
Barcelona (M. Varela) & Univ. Geneve
Dix et al., Chem. Mater. 2009
Dix et al., APL 2009
Dix et al. ACS Nano 2010
Ferroelectric
BiFeO3 matrix
Ferromagnetic
CoFe2O4 pillars
Substrate
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Index
Structural trends
Requirements for occurrence of magnetism and ferroelectricity.
The different families of multiferroics.
Potential applications: Electric and magnetic control of M and P
Magnetic multiferroics (YMnO3, etc) Exchange biased multiferroics Multiferroic bilayers (BTO-CFO) Active multiferroic interfaces
Summary
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Magnetic switching of polarization in thin films
Magnetic field
P YMnO3
Demonstration of switchable Polarization in multiferroic thin films
X. Martí et al. Appl Phys. Lett. 2009
X. Martí et al. Appl Phys. Lett. 2010
I. Fina et al App Phys Lett. 2010
I. Fina et al, Phys Rev. Lett (2011)
100 nm
P
•YMnO3 : bc-cycloidal
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SrTiO3(001)
YMnO3(001) a
c
b
AF axis → b
a
Nb:STO(001) substrates
c-textured
Two (a,b) domains in-plane
Nb:STO(110) substrates
a-textured
One single (a,c) domain in-plane
X. Marti et al., Thin Solid Films 516, 4899 (2008)
SrTiO3(110)
YMnO3(100) c
a
b AF axis →
YMnO3 thin films
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Ferroelectric properties of “relaxed” YMnO3 films
Two samples: a-textured and c-textured
Around 100 nm
Pt Pt
Pa Pc
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Ferroelectric properties of YMnO3 films
-200 -100 0 100 200-75
-50
-25
0
25
50
75
0T
4.5 T
9T
I (m
A)
E (kV/cm)
increasing H
-200 -100 0 100 200
-30
-15
0
15
30
E (kV/cm)
I (m
A)
-90
-45
0
45
90
Pc (n
C/c
m2)
T = 5K
Polarization along c-axis (H=0) (Pc ≈ 90 nC/cm2)
Polarization along a-axis (H= 0 T) Pa ≈ 0
-150 -75 0 75 150
-6
-3
0
3
6 Pa (n
C/c
m2)
E (kV/cm)
I PU
ND (mA
)
-80
-40
0
40
80
-150 -75 0 75 150
-6
-3
0
3
6
I PU
ND (mA
)
Pa (n
C/c
m2)
-80
-40
0
40
80
E (kV/cm)
(H= 6 T) Pa ≈ 90 nC/cm2
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I.Fina et al., APL 97, 232905(2010)
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Cycloidal magnetic order and FE in YMnO3 films
H = 0
I.Fina et al., APL 97, 232905(2010)
I. Fina et al, Phys Rev. Lett 106, 057206 (2011)
c - axis
b - axis
a - axis
P//c-axis
H ≠ 0
P//a-axis
c - axis
b - axis
a - axis
Increasing H//c
41
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42
b
c
a
Suppose an spiral structure with cycloid within the bc plane:
Pc
Pa
Magnetic field switching of P: from Pc to Pa
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Coherent flopping and memory
T. Kimura et al , Nature 426, 55 (2003)
+c
DW ±a
DW-a/-c
c-axis
a-axisb-axis
-a-a
-c
+a +c
????!
Why polarization emerges along the direction of the initial poling ?
43
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1 2
4
•100 % Polarization recovered •Full memory of initial state
3
Coherent flopping and memory
44
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1 2
3
No memory of the initial state ?
4
•Domain Walls: DWa+c+ and DWa+c- are to be formed. •The energy of domains walls become relevant •Pinning-Hysteresis ?
Coherent flopping and memory
45
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Equal chiral population : P+a = P-a ; Q +c = Q -c
An
tiferrom
agnetic
Paraelectric
bc-cycloidal
Paramagn
etic
(i)(ii)
(iii)
0 5 10 15 20 25 30 35 40 45-1
0
1
2
3
4
5
6
7
Hf (
T)
T (K)
?
?
(ii)
(iii)a-axis
c-axis
b-axis
0 100 200 3000
20
40
60
E (kV/cm)
1/2
I sw (
nA
)-300 -200 -100 0
-60
-40
-20
0
E (kV/cm)
1/2
I sw (
nA
)
m0H = 6 TP-a Pa
m0H = 6 TP+a Pa
Polarization flopping in YMnO3 thin films
Fina et al. PRL 107, 257601 (2011)
46
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m0H = 6 T
E+ = 285kV/cm ?
? a-axis
c-axis
b-axis
H
Polarization flopping in YMnO3 thin films
oherent flopping and memory
47
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m0H = 6 T
E+ = 285kV/cm ?
? a-axis
c-axis
b-axis
H
-300 -200 -100 0
-60
-40
-20
0
2/3
I sw (
nA
)
E (kV/cm)
m0H = 6 T
ND- 2/3
• After E-poling and successive flops of P the chiral state is preserved (P+a) !!!
• E-poling favours ONE chiral state that is memorized by the system
I. Fina et al. Phys. Rev. Lett. 107, 257601 (2011)
Polarization flopping in YMnO3 thin films
48
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m0H = 6 T
E+ = 285kV/cm ?
? a-axis
c-axis
b-axis
H
m0H = 6 T
PU+ 1/3
0 100 200 3000
20
40
60
1/3
I sw (
nA
)
E (kV/cm) DW
I. Fina et al. Phys. Rev. Lett. 107, 257601 (2011)
Polarization flopping in YMnO3 thin films
Memory but only a partial P recovery
49
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(Y1-xSmx)MnO3 crystals: background
Goto et al, Phys. Rev. B 92, 257201 (2004)
█ AFM █ FE
YTb
Daniel Thomas O’Flynn; PhD Thesis Univ. Warwick 2011 Supervisor: Prof. G. Balakrishnan
50
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Polarization flopping in (Y1-xSmx)MnO3 crystals
D. T. O’Flynn et al, Phys. Rev. B 83, 174426 (2011)
paraelectric
ferroelectric ferroelectric
51
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Magnetic field dependent polarization
I. Fina et al, submitted
0 2 4 6 8 100
10
20
30
40
50
T (
K)
m0H (T)
Sinusoidal AFM
Paramagnetic//Paraelectric
c
bP
bc-cycloid
Pb
a ab-cycloid
P//c
P//a
1 (E-poling)
2
3
4
5
6
0 3 6 9
0
300
600
Pa
+ (mC
/m2)
m0H (T)
0 10 20 30 40 50 60
0
300
600
Pa
+ (mC
/m2)
Temperature (K)
seed
DWDW DW
A P
P
B
C
DW
2
3
H//c
H=0
H//c
P
P ≈ 0
seed
(a)
1
6
2
34
5
(b)
(c)
A
B
C
(d)
A
C
m0H//c-axis = 9 T
T= 5 K
0 1 2
0
300
600
P(9
T)
(mC
/m2)
no of loops
A
52
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Magnetic field dependent polarization
I. Fina et al, in preparation
0 2 4 6 8 100
10
20
30
40
50
T (
K)
m0H (T)
Sinusoidal AFM
Paramagnetic//Paraelectric
c
bP
bc-cycloid
Pb
a ab-cycloid
P//c
P//a
1 (E-poling)
2
3
4
5
6
0 3 6 9
0
300
600
Pa
+ (mC
/m2)
m0H (T)
0 10 20 30 40 50 60
0
300
600
Pa
+ (mC
/m2)
Temperature (K)
seed
DWDW DW
A P
P
B
C
DW
2
3
H//c
H=0
H//c
P
P ≈ 0
seed
(a)
1
6
2
34
5
(b)
(c)
A
B
C
(d)
A
C
m0H//c-axis = 9 T
T= 5 K
0 1 2
0
300
600
P(9
T)
(mC
/m2)
no of loops seed
DW± DW ±
A PT
PT
B
C
DW ±
DWac DWacH-Flop
H-Flop
53
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Magnetic field dependent polarization
H-cycling
54
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Phase coexistence within the collinear region
0 10 20 30 40 50 60
0
200
400
PR (
5K
, T
R)
(mC
/m2)
TR (K)
1,0
1,1
1,2
1,3
1,4
1,5
1,6
a /
a (50K
)
(a) (b) TNTcy
(c)
(i) (ii) (iii)
P ≈ 0
(i)
T = 5K TR < Tcy
Pa+ (ii)
T = 5K TR > Tcy
seed
(iii)
T = 5K TR < TN
P = PS
P = PS
P = PS
P = PS
P < PS
P = PS
P = 0
P = 0
0 10 20 30 40 50 60
0
200
400 30 K
35 K
40 K
50 K
60 K
17.5 K
20 K
22.5 K
25 K
27.5 K
Pa
+ (mC
/m2)
Temperature (K)
TNTcy
T-cy
clin
g
55
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Conclusion
In YSmMnO3 cycloidal ferroelectric, Magnetic field can be used not only to flop P but also to modulate its value.
ab- and bc-regions embedded in the bc- or ab- cycloidal matrix are instrumental to keep memory of the polar history of the sample.
By T-cycling, polar seeds remain in the spin-collinear region and determine the polarization upon cooling.
Polar seeds can exists in paramagnetic state ? Search in frustrated magnetic systems.
56
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57
Index
Structural trends
Requirements for occurrence of magnetism and ferroelectricity.
The different families of multiferroics.
Potential applications: Electric and magnetic control of M and P
Magnetic multiferroics (YMnO3, etc) Exchange biased multiferroics Multiferroic bilayers (BTO-CFO) Active multiferroic interfaces
Summary
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58
Electric switching of Magnetization:
exploiting exchange bias
M
Electric field
Ferroelectric & Antiferromagnetic
Soft Ferromagnet
M
Results on exploiting exchange bias to switch the magnetization using multiferroics
V. Lauhkin et al. Phys Rev Lett. (2006)
V. Skumryev et al Phys Rev Lett (2011)
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59
Exchange biasing using multiferroics
V. Laukhin et al PRL 97, 227201 (2006)
Substrate STO(111)
Electrode: Pt
AF and FE h-YMnO3
Ferromagnet: Permalloy
AF/FE
FM
AF/FE
FM
V
(FE & AF) exchange coupled to a FM
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60
Exchange biasing using multiferroics
V. Skumryev. J. Fontcuberta et al, Phys Rev Lett 2011
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61
Exchange biasing using multiferroics
J. Fontcuberta et al, Phys Rev Lett 2011
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62
Conclusion
Hexagonal manganites: a toy for E-induced M switching but only for low Temperature
Not reversible: H should be applied to re-initiate (write)
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63
Index
Structural trends
Requirements for occurrence of magnetism and ferroelectricity.
The different families of multiferroics.
Potential applications: Electric and magnetic control of M and P
Magnetic multiferroics (YMnO3, etc) Exchange biased multiferroics Multiferroic bilayers (BTO-CFO) Active multiferroic interfaces
Summary
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64
Index
Structural trends
Requirements for occurrence of magnetism and ferroelectricity.
The different families of multiferroics.
Potential applications: Electric and magnetic control of M and P
Magnetic multiferroics (YMnO3, etc) Exchange biased multiferroics Multiferroic bilayers (BTO-CFO) Active multiferroic interfaces
Summary
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65
Multiferroic Tunnel Junctions
P P
EF
LSMO Au LSMO Au
0 0+ -
LSMO
EF
Au
0
ex
Parallel Antiparallel
LSMO
EF
Au
MLSMO MLBMOMLSMO MLBMO
P P
EF
LSMO Au LSMO Au
0 0+ -
LSMO
EF
Au
0
ex
LSMO
EF
Au
0
ex
Parallel Antiparallel
LSMO
EF
AuLSMO
EF
Au
MLSMO MLBMOMLSMO MLBMO
Au BiMnO3
LSMO
M. Gajek et al Nature Materials 6, 256 (2007)
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66
Multiferroic Memories
V. Garcia et al, Science 327, 1106 (2010)
E. Y. Tsimbal et al, PRL 97, 047201 (2006)
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67
ON/OFF switching of magnetization
G. Radaelli et al, submitted et al,
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68
ON/OFF switching of magnetization
G. Radaelli et al, submitted et al,
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69
ON/OFF switching of magnetization
G. Radeelli et al, submitted et al,
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70
ON/OFF switching of magnetization
G. Radaelli et al, submitted et al,
DFT calculations by S. Piicozzi et al
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71
Conclusion
Magnetization of interface in BaTiO3/Fe can be switched ON/OFF by an electric field.
Huge interface magnetoelectric coupling.
Room temperature applications
Many new possibilities
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72
• The race towards novel multiferroics has lead to a new and deep understanding of magnetoelectric coupling in oxides.
• The recognition that magnetic frustration, eventually enhanced exploiting epitaxial strains, could be of relevance for the discovery of new MF materials and opens a door for further research.
• Multiferroic response of domain walls and magnetic excitations is just starting.
• Interface coupling among multiferroic materials or even distinct ferroic orders may lead to breakthrough results and novel applications
Summary
Financed by:
Spanish MEC (NAN2004, Mat2008 and Consolider-Nanoselect ),
Generalitat de Catalunya, UE Proj. MaCoMuFi
ConsoliderConsolider
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73
grazie gracies
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74
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75
Index
Structural trends
Requirements for occurrence of magnetism and ferroelectricity.
The different families of multiferroics.
Potential applications: Electric and magnetic control of M and P
Magnetic multiferroics (YMnO3, etc) Exchange biased multiferroics Multiferroic bilayers (BTO-CFO) Active multiferroic interfaces
Summary
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76
Direct ME effect in multiferroic bilayers (BaTiO3-
CoFe2O4)
2-2 nanostructure 2-2 Multilayer
Bottom BTO Top BTO
= Low BaTiO3 response = High BaTiO3 response
K
k
k
K
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Pt PtPt Pt
Samples Bottom BTO Top BTO
77
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-1000 -500 0 500 1000
-75
-50
-25
0
25
50
75 Bottom BaTiO
3
Top BaTiO3
P (mC
/cm
2)
E (kV/cm)
bulk
0 100 200 300 400
15
20
25
30
35
r
Temperature (K)0 100 200 300 400
20
40
60
80
r
Temperature (K)
-1000 -500 0 500 1000
-1.0
-0.5
0.0
0.5
1.0
Bottom BaTiO3
Top BaTiO3
I (A
/cm
2)
E (kV/cm)
x10
T1
T2
T1
T2
Multiferroic characterization
-8 -6 -4 -2 0 2 4 6-400
-300
-200
-100
0
100
200
300
400
M (
em
u/c
m3)
m0H (T)
in-plane
out-of-plane
-8 -6 -4 -2 0 2 4 6-400
-300
-200
-100
0
100
200
300
400
in-plane
out-of-plane
M (
emu/
cm3)
m0H (T)
78
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Magnetodielectric characterization
0 100 200 300 400
15
20
25
30
35
0T
9T
r
Temperature (K)
T1
T2
0 100 200 300 400
10
100
0T
9T
r
Temperature (K)
T1
T2
0 100 200 300 400
0
10
20
30
40
170 180 1900.0
0.1
0.2
(%)
Temperature (K)
T2 ’ T1 ’ T3 ’
T O
R
C
0 100 200 300 4000,0
0,5
1,0
1,5
2,0
2,5
(%)
Temperature (K)
T O R
T2 ’ T1 ’ T3’
C
79
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Conclusions
Bottom BTO: FE clamped to the
substrate
Top BTO: FE clamped to
the FM
= Low BaTiO3 response = High BaTiO3 response
K
k
k
K
Direct magnetoelectric effect can be observed even in bilayers Significant effects visible only at temp. close to structural transitions.
80
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81
next (?)
1. Interface coupling in multiferroic heterostructures: • Achieving reversible room-temperature E-switching of M in exchange-
biased structures, still pending.
• Anisotropy tuning by E-controlled strain works OK on piezo substrates. Less
successful in integrated heterostructures.
• In ferroelectric-gated structures, significant changes of M and TC obtained.
Mixed contributions of e-field and piezo response.
• However… for RT applications FM metals better than Oxides
2. Magnetically induced ferroelectricity: • Spinels, hexaferrites and other complex oxides: new famillies of materials
for FE response and H-sensitive even at RT.
• Ferroelectricity by spin-dependent P-d hybridization a new route to be
explored. Tinny effects (P) ?. Fast response ?
3. Domain walls • Dynamics of DW walls in multiferroic materials (YMnO3 or cycloidal);
coupling ?
• DW in ferromagnetic/antiferromagnetic insulators: new FE objects ?
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0 100 200 300 400
15
20
25
30
35
r
Temperature (K)
T1
T2
0 100 200 300 400
10
100
r
Temperature (K)
T1
T2
T2 ’
T1 ’
T3’
BaTiO3 structural transitions
82
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83
Magnetic spirals ferroelectrics: (Dy, Tb)MnO3
Magnetic field switching of polarization in magnetic
ferroelectrics
P ~ A eij x (Si x Sj)
Antisymmetric exchange
P
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84
Summary
• Multiferroic heterostructures can be successfully used to
manipulate:
•the magnetization,
•the Curie temperature and
•the magnetic anisotropy of suitable ferromagnets
by using E-fields
• New multiferroic materials allow:
• (Fast) Switching of the Polarization even at RT
by using H-fields
• Domain walls in multiferroics:
• rather unknown objects that allow coupling of FM and FE
response.
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85
Linear CO chain: the simplest case of Type-II MF
+ - + - + - + -
Direct exchange striction
Symmetric superexchange and striction
p p = 0 p
+ - + - + - + -
P
+ - + - + - + -
P