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Introduction to Topological Insulators
Lecture at JAEA 1/23/2017 RIKEN
Kentaro Nomura (IMR, Tohoku)
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Introduction to Topological Insulators
• Quantum Hall effect• Z2 topological insulators• Electromagnetic responses
outline
Lecture at JAEA 1/23/2017 RIKEN
Kentaro Nomura (IMR, Tohoku)
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2DEG
K. von Klitzing 1980
heNRxyxy
21
Z = {..,‐1, 0, 1, 2, …}N
Quantum Hall effects
Hall conductivity
B
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2DEG
Quantum Hall effects
H 12m
p eA(r) 2
12m
[ix e(By)]2 y2
x
y
Landau gauge
A (By,0,0)
translational symmetry in x-direction
B
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Quantum Hall effects
H 12m
p eA(r) 2
12m
[ix e(By)]2 y2
ix kx 2Lx
n
H mc
2
2( y yn)
2 12m
y2
A (By,0,0)
n=1,2, …, N
2DEG
x
y
B
Landau gauge
translational symmetry in x-direction
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Quantum Hall effects
H 12m
p eA(r) 2
12m
[ix e(By)]2 y2
ix kx 2Lx
n
H mc
2
2( y yn)
2 12m
y2
n=1,2, …, N
2DEG
x
y
B
y
x
yn
Wave function
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Quantum Hall effects
H 12m
p eA(r) 2
12m
[ix e(By)]2 y2
ix kx 2Lx
n
H mc
2
2( y yn)
2 12m
y2
n=1,2, …, N
2DEG
x
y
B
y
x
yn
Wave function
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Quantum Hall effects
B 0 B 0
insulator (gapped)
=2
H mc
2
2( y yn)
2 12m
y2
metal (gapless)
y
x
yn
n=1,2, …, N
Landau準位
2DEG
x
y
B
Wave function
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Quantum Hall effects
insulator (gapped)
=2
Insulators (gapped)
Current does not flow
j 0 (?)
Landau準位
Quantized Hall current is carried in the ground state
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Quantum Hall effects
H 12m
p e[A A ] 2
12m
[ix e(By Lx
)]2 y2
mc
2
2y yn
0
y
2
12m
y2
yn nyy Ly / Ny
x
yn
n=1,2, …, N
Laughlin (1982)
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Quantum Hall effects
y
x
yn
Ex Lx 0
Tt 0 T 00
jy (e)LxT
e(h / eEx )
e2
hEx
xy yx e2
h
Faraday’s law
n=1,2, …, N
Hall conductivity
Laughlin (1982)
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Quantum Hall effects
insulator (gapped)
=2
Quantum Hall insulators
The ground state carries the current
j
E
No Joule heating
xy e2
h
x
y
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Disorder effects
x
y
extended
Density of states
localized
xy [-e2/h]
0
1
2
Ener
gy
Ener
gy
jy (e)LxT
e(h / eEx )
e2
hEx
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H 12m
[ix e(By)]2 y2 U (y)
12m
y2
mc2
2( y yn)
2 U ( yn)
Edge states
potential term
yn ℓ B2 kx
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Edge states
E(k) EF vF (k kFR)
‐right moving modes
yn ℓ B2 kx
vF dE(k)
dk kkFR
0
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Edge states
E(k) EF vF (k kFR)
E(k) EF vF (k kFL)
vF dE(k)
dk kkFR
0‐right moving modes
‐left moving modes
yn ℓ B2 kx
vF dE(k)
dk kkFL
0
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Edge states
E(k) EF vF (k kFL)
R(x,t) eikFRxR(x,t)
L(x,t) eikFRxL(x,t)
E(k) EF vF (k kFR)
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Edge states
NR dx RR
NL dx LL
2nd quantizationformalism
ddt
NR NL
2
e
hdx Ex
anomaly equation
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Berry’s phase
| n,R ein [C ] | n,R
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Berry’s phase
Berry connection
Berry curvature
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Berry’s phase
Berry connection
Berry curvature
Gauge transformation
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Berry’s phase
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Berry’s phase
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zyx
yxz
RiRRiRRR
H σRR][
R
Berry’s phase
|,R ei /2 ei /2 cos 2
ei /2 sin 2
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Berry’s phase
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Berry’s phase
N (r )
S (r )
x y
z
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Berry’s phase
N (r )
S (r )
x y
z
N 1
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Geometry and Quantum Mechanics
basis
differential
connection
cuarvature
| n,Rei (x)
jik (x) ek (x) jei (x) A(R) in,R |R | n,R
R R iA DRiVj iV
j ikjV k DiV
j
DxDy DyDx iBz(DaDb DbDa )V j Riabj V i
Curved space Quantum system
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E
k
E
EF
j = 0 No current flows
Trivial band insulator
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E
k
heN
Ej
y
xxy
2
j
E
EF
Non-trivial band insulator
QHE
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j = 0
E
j = 1(e2/h)E
E
heN
Ej
y
xxy
2
topologically trivial topologically nontrivial
Topology?
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j = 0
E
j = 1(e2/h)E
E
heN
Ej
y
xxy
2
xy jx
Ey
Hall conductivity
topologically trivial topologically nontrivial
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j = 0
E
j = 1(e2/h)E
E
heN
Ej
y
xxy
2
xy jx
Ey
Hall conductivity
Perturbation theory: HE H0 eEy y
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xy jx
Ey
Hall conductivity
Perturbation theory: HE H0 eEy y
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xy jx
Ey
Heisenberg equation
Hall conductivity
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xy jx
Ey
Heisenberg equation
Hall conductivity
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xy jx
Ey
Heisenberg equation
Hall conductivity
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H unk Enk unk
Hall conductivity
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H unk Enk unk
Hall conductivity
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H unk Enk unk
Hall conductivity
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Hall conductivitya(k) i
n unk k unk
xy e2
hd 2k2
ay
kx
ax
ky
e2
hd 2k2 k a(k) z
a(k)
a(k)
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Hall conductivitya(k) i
n unk k unk
xy e2
hd 2k2
ay
kx
ax
ky
e2
hd 2k2 k a(k) z
a(k)
a(k)
Thouless, Kohmoto, Nightingale, Nijs, PRL 49, 405 (1982).Kohmoto, Ann. Phys. 160 355 (1985).
TKNN formula
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a(k) in unk k unk
xy e2
hd 2k2
ay
kx
ax
ky
e2
hd 2k2 k a(k) z
a(k)
a(k)
Hall conductivity
ky
kx
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a(k) in unk k unk
xy e2
hd 2k2
ay
kx
ax
ky
e2
hd 2k2 k a(k) z
a(k)
a(k)
Hall conductivity
ky
kx
= 0 !?
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a(k) in unk k unk
xy e2
hd 2k2
ay
kx
ax
ky
e2
hd 2k2 k a(k) z
a(k)
a(k)
Hall conductivity
ky
kx
= 0 !?
a(k1 )
k1
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a(k) in unk k unk
xy e2
hd 2k2
ay
kx
ax
ky
e2
hd 2k2 k a(k) z
a(k)
a(k)
Hall conductivity
ky
kx
RI
k1
RII
a I (k) a II (k)k (k)
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Hall conductivity
ky
kx
RI
k1
RII
a I (k) a II (k)k (k)
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Hall conductivity
ky
kx
RI
k1
RII
a I (k) a II (k)k (k)
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Hall conductivity
ky
kx
RI
k1
RII
a I (k) a II (k)k (k)2N
unkI ei (k ) unk
II
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Hall conductivity
“hole”
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Hall conductivity
“hole”
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Hall conductivity
“hole”
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Hall conductivity
m > 0 m < 0
“hole”
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Hall conductivity
m > 0 m < 0
AN
AS
“hole”
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Hall conductivity
m > 0 m < 0
AN
AS
AN (R) 1 cos2Rsin
e
“hole”
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Hall conductivity
“hole”
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Hall conductivity
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The gap closesat the transition point
E
EF
v=0 v=1
Transition between different topological phasesfor example = 0 and 1
How topology changes?
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v=0
The gap closesat the boundary
= gapless edge modes
Two topologically distinct insulators attached with each other
y
x
v=1
gapped state gapped state
Edge states
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v=0
Two topologically distinct insulators attached with each other
y
x
v=1
gapped state gapped state
Edge states
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Introduction to Topological Insulators
• Quantum Hall effect• Z2 topological insulators• Electromagnetic responses
outline
Lecture at JAEA 1/23/2017 RIKEN
Kentaro Nomura (IMR, Tohoku)
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EF
+
_ +
_
Trivial insulator topological insulator
What is topology insulators?
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B
B
QHE up spin
QHE down spin
k
Quantum Hall Effect (QHE) is realized when time‐reversal symmetry is broken
Basic idea
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B
B
QHE up spin
QHE down spin
TheoryKane-Mele (2005)Bernevig-Zhang (2006)Bernevig-Hughes-Zhang (2006)
ExperimentMolemkamp goup (2007)
Quantum spin Hall effect (QSHE)
HgTe QW
k
E
k
‐k
Basic idea
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Spin-Orbit Coupling (SOC)
Sv
SOC in an atomMoving electrons feel
an effective magnetic fieldBeff
v E
1 v2
c2
Hso = L S
E
+
_
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Sv
Beff v E
1 v2
c2
E
Analogy with a magnetic field HBorbital em
p A
e2m
r p B
A 12
B r
H (peA)2
2m
Spin-Orbit Coupling (SOC)
+
SOC in an atomMoving electrons feel
an effective magnetic field
_
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Insulator (Semiconductor)
)(knE
k
)(knE
k
3D bulk
p-band
s-band
L =1Lz=+1, 0, -1
3-fold degeneracy(without spin)
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)(knE
k
)(knE
k
3D bulk
Insulator (Semiconductor)
p-band
s-band
L =1Lz=+1, 0, -1
3-fold degeneracy(without spin)
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)(knE
k
)(knE
k
3D bulk 2D quantum well
| s,, | s,
| p ,, | p ,
Hso = L S
2
J2 L2 S2
Insulator (Semiconductor)
p-band
s-band
J = L + S
j =3/2jz=+3/2, -3/2 (heavy hole band)jz=+1/2, -1/2 (light hole band)
j =1/2jz=+1/2, -1/2 (split off band)
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)(knE
k
)(knE
k
3D bulk 2D quantum well
| s,, | s,
| p ,, | p ,
J = L + S
j =3/2jz=+3/2, -3/2 (heavy hole band)jz=+1/2, -1/2 (light hole band)
j =1/2jz=+1/2, -1/2 (split off band)
Hso = L S
2
J2 L2 S2
2D (quantum well)
p-band
s-band
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2dTI in HgTe/CdTe quantum well
)(knE
k
)(knE
k
2D quantum well
| s,, | s,
| p ,, | p ,
EF
+
_ +
_
Trivial insulator topological insulator
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2dTI in HgTe/CdTe quantum well
)(knE
k
)(knE
k
2D quantum well
| s,, | s,
| p ,, | p ,
Bernevig, Hughes, Zhang (2006)
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2dTI in HgTe/CdTe quantum well
Bernevig, Hughes, Zhang (2006)
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2dTI in HgTe/CdTe quantum well
Bernevig, Hughes, Zhang (2006)
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2dTI in HgTe/CdTe quantum well
Bernevig, Hughes, Zhang (2006)
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2dTI in HgTe/CdTe quantum well
p-band
s-band
tsp=0)(knE
k
)(knE
k
Hso = L S
2
J2 L2 S2
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2dTI in HgTe/CdTe quantum well
tsp=0 tsp=0
p-band
s-band)(knE
k
Bernevig, Hughes, Zhang (2006)
Weak SOC Strong SOC
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2dTI in HgTe/CdTe quantum well
tsp=0 tsp=0
Weak SOC
p-band
s-band
Strong SOC + sp hybridization
Bernevig, Hughes, Zhang (2006)
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2dTI in HgTe/CdTe quantum well
tsp=0 tsp=0
Weak SOC
p-band
s-band
Strong SOC + sp hybridization
EF
+
_ +
_
Trivial insulator topological insulator
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2dTI in HgTe/CdTe quantum well
tsp=0 tsp=0
with boundary
Normal insulator Topological insulator
p-band
s-band
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2dTI in HgTe/CdTe quantum well
tsp=0 tsp=0
p-band
s-band
Normal insulator Topological insulator
with boundary
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2dTI in HgTe/CdTe quantum well
p-band
s-band
strong SOCweak SOC
E
+
_ +
_
Normalinsulator
Topologicalinsulator
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2dTI in HgTe/CdTe quantum well
Topologicalinsulator
Normalinsulator
p-band
s-band
strong SOCweak SOC
E
+
_ +
_
Normalinsulator
Topologicalinsulator
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2dTI in HgTe/CdTe quantum well
Ek = E-k
2-fold degeneracy at k=0 is protected by symmetry
Time-reversal symmetry
k0 0k0
Normal Topological
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Moore-Balents, Roy, Fu-Kane-Mele, …
Bi‐Sb, Bi2Se3, Bi2Te3, …
2d 3d
Topological insulator
E
kx
ky
HgTe QW
k
E
From 2d to 3d
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3d Topological insulator Bi2Se3
Bi : 6s26p3Se : 4s24p2
5 x 3 (px,py,pz) x 2 (spin) = 30 p‐states
Zhang et al. ’09
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Bi : 6s26p3Se : 4s24p2
5 x 3 (px,py,pz) x 2 (spin) = 30 p‐states
3d Topological insulator Bi2Se3
Zhang et al. ’09
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Bi : 6s26p3Se : 4s24p2
5 x 3 (px,py,pz) x 2 (spin) = 30 p‐states
4‐bandmodel
3d Topological insulator Bi2Se3
Zhang et al. ’09
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4‐bandmodel
3d Topological insulator Bi2Se3
H(k 0)
m0 0 0 00 m0 0 00 0 m0 00 0 0 m0
(k 0)
Zhang et al. ’09
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3d Topological insulator Bi2Se3
H(k 0)
m0 0 0 00 m0 0 00 0 m0 00 0 0 m0
(k 0)
k.p theory
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i ii kcmm 2
0)(k
H(k)
m(k) 0 A1kz A2k0 m(k) A2k A1kz
A1kz A2k m(k) 0A2k A1kz 0 m(k)
(k)
3d Topological insulator Bi2Se3
1st order 2nd orderk.p theory
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i ii kcmm 2
0)(k
H(k)
m(k) 0 A1kz A2k0 m(k) A2k A1kz
A1kz A2k m(k) 0A2k A1kz 0 m(k)
(k)
m0 > 0 m0 < 0
normal insulator topological insulator
3d Topological insulator Bi2Se3
m0 = 0The gap vanishes at this point
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m0 > 0 m0 < 0
normal insulator topological insulator
3d Topological insulator Bi2Se3
m0 = 0The gap vanishes at this point
E
_
+ _
+
Dirac semimetalNI TI
m0 (Band gap)
strong SOCweak SOC
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m0 > 0 m0 < 0
normal insulator topological insulator
3d Topological insulator Bi2Se3
m0 = 0The gap vanishes at this point
)(knE
k
Surface Dirac modesrealized in a slab geometry
m0 < 0
m0 > 0 (vacuum)
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3d Topological insulator Bi2Se3
)(knE
k
Surface Dirac modesrealized in a slab geometry
m0 < 0
m0 > 0 (vacuum)
Surface modes described by the Dirac Hamiltonian:
(m 0)
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kk
weak topological insulator strong topological insulator(ordinary insulator)
00
Z2 = { 0, 1 }
2 0 1 3
even odd
Z2 topological insulators
even or odd
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kx
Hsieh et al. (2009) Hsieh et al. (2008)
BiTeI
Ishizaka et al. (2011)
Bi2Se3 Bi1‐xSbx
Z2 topological insulators
Z2 = { 0, 1 }even or odd
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3D Topological insulator
E
3D Topological insulator
E
Hsurface = vF(ypx - xpy ) + V0(r) + V(r)
non‐magnetic impurities magnetic impurities
Impurity effects
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3D Topological insulator
E
3D Topological insulator
E
Hsurface = vF(ypx - xpy ) + V0(r) + V(r)
non‐magnetic impurities magnetic impurities
Impurity effects
KN, Koshino, Ryu, PRL (2007)
Topologically protected fromAnderson localization
Topological Conventional
Z2 odd Z2 even
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3D Topological insulator
E
3D Topological insulator
E
Hsurface = vF(ypx - xpy ) + V0(r) + V(r)
non‐magnetic impurities magnetic impurities
Impurity effects
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3D Topological insulator
E
3D Topological insulator
E
Hsurface = vF(ypx - xpy ) + V0(r) + V(r)
non‐magnetic impurities magnetic impurities
xy
e2 / h d2k
2 bz(k) 12
bz(k) m
2 k2 m23
E
m
Ideal uniform case
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Quantum Anomalous Hall Effect
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EF
EF
0
xy
xx
Low T
Theory Experiment
KN, Nagaosa (2011)
(2013)
Quantum Anomalous Hall Effect
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KN, Nagaosa (2011) Checkelsky, Yoshimi, Tsukazaki, et al. (2014)
Theory Experiment
Quantum Anomalous Hall Effect
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Introduction to Topological Insulators
• Quantum Hall effect• Z2 topological insulators• Electromagnetic responses
outline
Lecture at JAEA 1/23/2017 RIKEN
Kentaro Nomura (IMR, Tohoku)
![Page 106: Introduction to Topological Insulators - JAEA...Introduction to Topological Insulators •Quantum Hall effect •Z2 topological insulators •Electromagnetic responses outline Lecture](https://reader036.vdocuments.us/reader036/viewer/2022081601/611a0825d0a1af79066efd1b/html5/thumbnails/106.jpg)
M = m B (magnetization)
P = e E(Electric polarization)
B E
PM
Response to ElectroMagneticfieldsin normal insulators
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M = m E
P = e B
(magnetic moment) (electric field)
(electric polarization) (magnetic field)
PM
E B
Response to ElectroMagneticfieldsin topological insulators
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E
B = (4/c) j
j
M = Ehce
22
Qi, Hughes, Zhang ’08Essin, Moore, Vanderbilt ’09
3D TI + magnetic impurities
Response to ElectroMagneticfields
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Response to ElectroMagneticfields
B
+ +++++
+ +
E
Surface QH states
0 0
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Response to ElectroMagneticfields
Surface QH states
B E
+ +++++
+ +
++++
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Response to ElectroMagneticfields
Surface QH states
Qi, Hughes, Zhang ’08
E
j
+ +++++
++++
B
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The Action Principle
2 2
0
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The Action Principle
2 2
0
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2 2
0
+ 0
+ 0for constant
The Action Principle
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Axion term ( term)
2 2
2
2 2
0
Peccei, Quinn 1977Wilczek 1987
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2
E
j
+ +++++
++++
0 0
B
2 2
Axion term ( term)
Qi, Hughes, Zhang 2008
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SummaryA topological insulator is a material with a finite bulk gap and gapless excitations at the surface.
strong SOCweak SOC
E
+
_ +
_
Normalinsulator
Topologicalinsulator
It realizes novel magnetoelectric responese.