Introduction toCMOS VLSI
Design
MOS Behavior in DSM
MOS Behavior in DSM Slide 2CMOS VLSI Design
Outline Transistor I-V Review Nonideal Transistor Behavior
– Velocity Saturation– Channel Length Modulation– Body Effect– Leakage– Temperature Sensitivity
Process and Environmental Variations– Process Corners
MOS Behavior in DSM Slide 3CMOS VLSI Design
Ideal Transistor I-V Shockley 1st order transistor models
2
cutoff
linear
saturatio
0
2
2n
gs t
dsds gs t ds ds dsat
gs t ds dsat
V V
VI V V V V V
V V V V
MOS Behavior in DSM Slide 4CMOS VLSI Design
Ideal nMOS I-V Plot 180 nm TSMC process
Ideal Models– = 155(W/L) A/V2
– Vt = 0.4 V
– VDD = 1.8 V
Ids (A)
Vds0 0.3 0.6 0.9 1.2 1.5 1.8
100
200
300
400
Vgs = 0.6
Vgs = 0.9
Vgs = 1.2
Vgs = 1.5
Vgs = 1.8
0
MOS Behavior in DSM Slide 5CMOS VLSI Design
Simulated nMOS I-V Plot 180 nm TSMC process BSIM 3v3 SPICE models What differs?
Vds
0 0.3 0.6 0.9 1.2 1.5
Vgs = 1.8
Ids (A)
0
50
100
150
200
250
Vgs = 1.5
Vgs = 1.2
Vgs = 0.9
Vgs = 0.6
MOS Behavior in DSM Slide 6CMOS VLSI Design
Simulated nMOS I-V Plot 180 nm TSMC process BSIM 3v3 SPICE models What differs?
– Less ON current– No square law– Current increases
in saturation
Vds
0 0.3 0.6 0.9 1.2 1.5
Vgs = 1.8
Ids (A)
0
50
100
150
200
250
Vgs = 1.5
Vgs = 1.2
Vgs = 0.9
Vgs = 0.6
MOS Behavior in DSM Slide 7CMOS VLSI Design
Velocity Saturation We assumed carrier velocity is proportional to E-field
– v = Elat = Vds/L
At high fields, this ceases to be true– Carriers scatter off atoms
– Velocity reaches vsat
• Electrons: 6-10 x 106 cm/s• Holes: 4-8 x 106 cm/s
– Better modelEsat0
0
slope =
Elat
2Esat3Esat
sat
sat / 2
latsat sat
lat
sat
μμ
1
Ev v E
EE
MOS Behavior in DSM Slide 8CMOS VLSI Design
Vel Sat I-V Effects Ideal transistor ON current increases with VDD
2
Velocity-saturated ON current increases with VDD
Real transistors are partially velocity saturated– Approximate with -power law model
– Ids VDD
– 1 < < 2 determined empirically
2
2
ox 2 2gs t
ds gs t
V VWI C V V
L
ox maxds gs tI C W V V v
MOS Behavior in DSM Slide 9CMOS VLSI Design
-Power Model
Ids (A)
Vds0 0.3 0.6 0.9 1.2 1.5 1.8
100
200
300
400
Vgs = 0.6
Vgs = 0.9
Vgs = 1.2
Vgs = 1.5
Vgs = 1.8
0
-lawSimulated
Shockley
0 cutoff
linear
saturation
gs t
dsds dsat ds dsat
dsat
dsat ds dsat
V V
VI I V V
V
I V V
/ 2
2dsat c gs t
dsat v gs t
I P V V
V P V V
MOS Behavior in DSM Slide 10CMOS VLSI Design
Channel Length Modulation Reverse-biased p-n junctions form a depletion region
– Region between n and p with no carriers
– Width of depletion Ld region grows with reverse bias
– Leff = L – Ld
Shorter Leff gives more current
– Ids increases with Vds
– Even in saturation
n+
p
GateSource Drain
bulk Si
n+
VDDGND VDD
GND
LLeff
Depletion RegionWidth: Ld
MOS Behavior in DSM Slide 11CMOS VLSI Design
Chan Length Mod I-V
= channel length modulation coefficient– not feature size– Empirically fit to I-V characteristics
21
2ds gs t dsI V V V
Ids (A)
Vds0 0.3 0.6 0.9 1.2 1.5 1.8
100
200
300
400
Vgs = 0.6Vgs = 0.9
Vgs = 1.2
Vgs = 1.5
Vgs = 1.8
0
MOS Behavior in DSM Slide 12CMOS VLSI Design
Body Effect Vt: gate voltage necessary to invert channel
Increases if source voltage increases because source is connected to the channel
Increase in Vt with Vs is called the body effect
MOS Behavior in DSM Slide 13CMOS VLSI Design
Body Effect Model
s = surface potential at threshold
– Depends on doping level NA
– And intrinsic carrier concentration ni
= body effect coefficient
0t t s sb sV V V
2 ln As T
i
Nv
n
sioxsi
ox ox
2q2q A
A
NtN
C
MOS Behavior in DSM Slide 14CMOS VLSI Design
OFF Transistor Behavior What about current in cutoff? Simulated results What differs?
– Current doesn’t go
to 0 in cutoff
Vt
Sub-threshold
Slope
Sub-thresholdRegion
SaturationRegion
Vds = 1.8
Ids
Vgs
0 0.3 0.6 0.9 1.2 1.5 1.8
10 pA
100 pA
1 nA
10 nA
100 nA
1 A
10 A
100 A
1 mA
MOS Behavior in DSM Slide 15CMOS VLSI Design
Leakage Sources Subthreshold conduction
– Transistors can’t abruptly turn ON or OFF Junction leakage
– Reverse-biased PN junction diode current Gate leakage
– Tunneling through ultrathin gate dielectric
Subthreshold leakage is the biggest source in modern transistors
MOS Behavior in DSM Slide 16CMOS VLSI Design
Subthreshold Leakage Subthreshold leakage exponential with Vgs
n is process dependent, typically 1.4-1.5
0e 1 egs t ds
T T
V V V
nv vds dsI I
2 1.80 eds TI v
MOS Behavior in DSM Slide 17CMOS VLSI Design
DIBL Drain-Induced Barrier Lowering
– Drain voltage also affect Vt
– High drain voltage causes subthreshold leakage to ________.
ttdsVVVt t dsV V V
MOS Behavior in DSM Slide 18CMOS VLSI Design
DIBL Drain-Induced Barrier Lowering
– Drain voltage also affect Vt
– High drain voltage causes subthreshold leakage to increase.
ttdsVVVt t dsV V V
MOS Behavior in DSM Slide 19CMOS VLSI Design
Junction Leakage Reverse-biased p-n junctions have some leakage
Is depends on doping levels
– And area and perimeter of diffusion regions– Typically < 1 fA/m2
e 1D
T
V
vD SI I
n well
n+n+ n+p+p+p+
p substrate
MOS Behavior in DSM Slide 20CMOS VLSI Design
Gate Leakage Carriers may tunnel thorough very thin gate oxides Predicted tunneling current (from [Song01])
Negligible for older processes May soon be critically important
VDD
0 0.3 0.6 0.9 1.2 1.5 1.8J G
(A
/cm2
)
10-9
10-6
10-3
100
103
106
109
tox
0.6 nm0.8 nm
1.0 nm1.2 nm
1.5 nm
1.9 nm
VDD trend
MOS Behavior in DSM Slide 21CMOS VLSI Design
Temperature Sensitivity Increasing temperature
– Reduces mobility
– Reduces Vt
ION ___________ with temperature
IOFF ___________ with temperature
MOS Behavior in DSM Slide 22CMOS VLSI Design
Temperature Sensitivity Increasing temperature
– Reduces mobility
– Reduces Vt
ION decreases with temperature
IOFF increases with temperature
Vgs
dsI
increasingtemperature
MOS Behavior in DSM Slide 23CMOS VLSI Design
So What? So what if transistors are not ideal?
– They still behave like switches. But these effects matter for…
– Supply voltage choice– Logical effort– Quiescent power consumption– Pass transistors– Temperature of operation
MOS Behavior in DSM Slide 24CMOS VLSI Design
Parameter Variation Transistors have uncertainty in parameters
– Process: Leff, Vt, tox of nMOS and pMOS
– Vary around typical (T) values Fast (F)
– Leff: ______
– Vt: ______
– tox: ______
Slow (S): opposite Not all parameters are independent
for nMOS and pMOS
nMOS
pM
OS
fastslow
slow
fast
TT
FF
SS
FS
SF
MOS Behavior in DSM Slide 25CMOS VLSI Design
Parameter Variation Transistors have uncertainty in parameters
– Process: Leff, Vt, tox of nMOS and pMOS
– Vary around typical (T) values Fast (F)
– Leff: short
– Vt: low
– tox: thin
Slow (S): opposite Not all parameters are independent
for nMOS and pMOS
nMOS
pM
OS
fastslow
slow
fast
TT
FF
SS
FS
SF
MOS Behavior in DSM Slide 26CMOS VLSI Design
Environmental Variation VDD and T also vary in time and space
Fast:
– VDD: ____
– T: ____
Corner Voltage Temperature
F
T 1.8 70 C
S
MOS Behavior in DSM Slide 27CMOS VLSI Design
Environmental Variation VDD and T also vary in time and space
Fast:
– VDD: high
– T: low
Corner Voltage Temperature
F 1.98 0 C
T 1.8 70 C
S 1.62 125 C
MOS Behavior in DSM Slide 28CMOS VLSI Design
Process Corners Process corners describe worst case variations
– If a design works in all corners, it will probably work for any variation.
Describe corner with four letters (T, F, S)– nMOS speed– pMOS speed– Voltage– Temperature
MOS Behavior in DSM Slide 29CMOS VLSI Design
Important Corners Some critical simulation corners include
Purpose nMOS pMOS VDD Temp
Cycle time
Power
Subthrehold
leakage
Pseudo-nMOS
MOS Behavior in DSM Slide 30CMOS VLSI Design
Important Corners Some critical simulation corners include
Purpose nMOS pMOS VDD Temp
Cycle time S S S S
Power F F F F
Subthrehold
leakage
F F F S
Pseudo-nMOS S F ? ?