×
Log in
Upload File
Most Popular
Study
Business
Design
Technology
Travel
Explore all categories
Download -
InGaAs/InP DHBTs with Emitter and Base Defined through Electron-beam Lithography for Reduced C cb and Increased RF Cut-off Frequency Evan Lobisser 1,*,
Download
Top Related
Strain and localization effects in InGaAs(N) quantum …publications.lib.chalmers.se/records/fulltext/210903/local_210903.pdf · Strain and localization effects in InGaAs(N) ... in
InGaAs and GaInNAs(Sb) Advanced LIGO Photodiodes
Characteristics of InP/InGaAs based Heterojunction Phototransistor for Optoelectronic ...tera.yonsei.ac.kr/publication/pdf/BS_2007_SCHan.pdf · 2012-06-19 · Characteristics of InP/InGaAs
USB3.0 InGaAs NIR CAMERA ARTCAM-990SWIR-TEC …
Vibhor Jain , Evan Lobisser, Ashish Baraskar, Brian J Thibeault, Mark Rodwell
InGaAs area image sensors - Hamamatsu
fmax InP DHBTs in a refractory emitter and self-aligned ......1 1.0-THz f max InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance Vibhor
Characterizing InGaAs quantum dot chains