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Indium gallium nitride
By Charles BallMEEN 3344
October 15, 2008
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Characteristics of Indium Gallium Nitride
• Semi Conductor Material• high heat capacity• mix of gallium nitride (GaN) and
indium nitride (InN)• Defect Rich
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Band Gap
• Between Valence and Conduction bands.
• Electrons may jump from valence to conduction band if supplied with specific energy.
• This specific energy is unique for all materials.
Conductor Band
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Lab Discovery
•Semiconductor Indium Nitride band gap re-measured and found to be 0.7eV instead of 2.0eV.
•By Adjusting the composition %’s it can be tuned to any part of the electromagnetic spectrum.
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Advantages / Disadvantages
Disadvantages
•Difficult to dope to create p-type material
•Billions of defects per square centimeter.
Advantages
•Low Band gap (o.7eV)
•Smooth gap-curve when adjusting alloy composition.
• Easily made into layers (very tolerant to mismatched lattice systems)
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References
•http://en.wikipedia.org/wiki/Band_gap
•http://www.lbl.gov/Science-Articles/Archive/MSD-full-spectrum-solar-cell.html
•http://www.lbl.gov/Science-Articles/Archive/MSD-perfect-solar-cell-2.html
•http://en.wikipedia.org/wiki/Indium_gallium_nitride