Download - FQA10N80C F109 rev.C2 20140307
March 2014
FQ
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©2006 Fairchild Semiconductor CorporationFQA10N80C_F109 Rev. C2
www.fairchildsemi.com1
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Thermal Characteristics
Symbol Parameter FQA10N80C_F109 Unit
VDSS Drain to Source Voltage 800 V
ID Drain Current-Continuous (TC = 25oC) 10 A
-Continuous (TC = 100oC) 6.32 A
IDM Drain Current - Pulsed (Note 1) 40 A
VGSS Gate to Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 920 mJ
IAR Avalanche Current (Note 1) 10 A
EAR Repetitive Avalanche Energy (Note 1) 24 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns
PD Power Dissipation(TC = 25oC) 240 W
- Derate above 25oC 1.92 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TLMaximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 Seconds
300 °C
Symbol Parameter FQA10N80C_F109 Unit
RθJC Thermal Resistance, Junction to Case, Max 0.52 oC/W
RθJA Thermal Resistance, Junction to Ambient, Max 40 oC/W
FQA10N80C_F109 N-Channel QFET® MOSFET800 V, 10 A, 1.1 Ω
Features• 10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A
• Low Gate Charge (Typ. 44 nC)
• Low Crss (Typ. 15 pF)
• 100% Avalanche Tested
• RoHS compliant
DescriptionThis N-Channel enhancement mode power MOSFET is pro-duced using Fairchild Semiconductor’s proprietary planar stripeand DMOS technology. This advanced MOSFET technologyhas been especially tailored to reduce on-state resistance, andto provide superior switching performance and high avalancheenergy strength. These devices are suitable for switched modepower supplies, active power factor correction (PFC), and elec-tronic lamp ballasts.
TO-3PNG
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©2006 Fairchild Semiconductor CorporationFQA10N80C_F109 Rev. C2
www.fairchildsemi.com2
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted.
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 17.3 mH, IAS = 10 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 8.4 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FQA10N80C_F109 FQA10N80C TO-3PN Tube N/A N/A 30 units
Symbol Parameter Test Conditions Min Typ Max Unit
Off CharacteristicsBVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 800 -- -- V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature Coefficient
ID = 250 μA, Referenced to 25°C -- 0.98 -- V/°C
IDSS Zero Gate Voltage Drain CurrentVDS = 800 V, VGS = 0 V -- -- 10 μA
VDS = 640 V, TC = 125°C -- -- 100 μA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 3.0 -- 5.0 V
RDS(on)Static Drain-Source On-Resistance
VGS = 10 V, ID = 5.0 A -- 0.93 1.1 Ω
gFS Forward Transconductance VDS = 50 V, ID = 5.0 A -- 5.8 -- S
Dynamic CharacteristicsCiss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 2150 2800 pF
Coss Output Capacitance -- 180 230 pF
Crss Reverse Transfer Capacitance -- 15 20 pF
Switching Characteristics td(on) Turn-On Delay Time VDD = 400 V, ID = 10.0 A,
RG = 25 Ω
(Note4)
-- 50 110 ns
tr Turn-On Rise Time -- 130 270 ns
td(off) Turn-Off Delay Time -- 90 190 ns
tf Turn-Off Fall Time -- 80 170 ns
Qg Total Gate Charge VDS = 640 V, ID = 10.0 A,
VGS = 10 V
(Note 4)
-- 45 58 nC
Qgs Gate-Source Charge -- 13.5 -- nC
Qgd Gate-Drain Charge -- 17 -- nC
Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- 10.0 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 40.0 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 10.0 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 10.0 A,
dIF / dt = 100 A/μs
-- 730 -- ns
Qrr Reverse Recovery Charge -- 10.9 -- μC
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©2006 Fairchild Semiconductor CorporationFQA10N80C_F109 Rev. C2
www.fairchildsemi.com3
Typical Characteristics
0 5 10 15 20 25 300.5
1.0
1.5
2.0
2.5
VGS
= 20V
VGS
= 10V
※ Note : TJ = 25
RD
S(O
N) [Ω
],D
rain
-Sou
rce
On-
Res
ista
nce
ID, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.410
-1
100
101
150※ Notes : 1. VGS = 0V 2. 250μs Pulse Test
25
I DR, R
ever
se D
rain
Cur
rent
[A]
VSD
, Source-Drain voltage [V]
0 10 20 30 40 500
2
4
6
8
10
12
VDS
= 400V
VDS
= 160V
VDS
= 640V
※ Note : ID = 10A
VG
S, G
ate-
Sou
rce
Vol
tage
[V]
QG, Total Gate Charge [nC]
10-1
100
101
10-1
100
101
VGS
Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 VBottom : 5.5 V
※ Notes : 1. 250μs Pulse Test 2. T
C = 25
I D
, Dra
in C
urre
nt [A
]
VDS
, Drain-Source Voltage [V]
2 4 6 8 1010
-1
100
101
150oC
25oC -55oC
※ Notes : 1. V
DS = 50V
2. 250μs Pulse Test
I D, D
rain
Cur
rent
[A]
VGS
, Gate-Source Voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vsDrain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
10-1
100
101
0
500
1000
1500
2000
2500
3000
3500C
iss = C
gs + C
gd (C
ds = shorted)
Coss
= Cds + C
gdC
rss = C
gd
※ Notes : 1. V
GS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Cap
acita
nce
[pF
]
VDS
, Drain-Source Voltage [V]
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©2006 Fairchild Semiconductor CorporationFQA10N80C_F109 Rev. C2
www.fairchildsemi.com4
-100 -50 0 50 100 150 2000.8
0.9
1.0
1.1
1.2
※ Notes : 1. V
GS = 0 V
2. ID = 250 μA
BV
DS
S, (
Nor
mal
ized
)D
rain
-Sou
rce
Bre
akdo
wn
Vol
tage
TJ, Junction Temperature [
oC]
-100 -50 0 50 100 150 2000.0
0.5
1.0
1.5
2.0
2.5
3.0
※ Notes : 1. V
GS = 10 V
2. ID = 5.0 A
RD
S(O
N),
(Nor
mal
ized
)D
rain
-Sou
rce
On-
Res
ista
nce
TJ, Junction Temperature [
oC]
1 0-5
1 0-4
1 0-3
1 0-2
1 0-1
1 00
1 01
1 0-2
1 0-1
1 00
※ N o tes : 1 . Z
θ JC(t) = 0 .52 /W M ax.
2 . D u ty F ac to r, D = t1/t2 3 . T JM - T C = P DM * Z θ JC(t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Zθ
JC(t
), T
herm
al R
espo
nse
t1, S q u a re W a ve P u lse D u ra tio n [se c ]
Typical Characteristics (Continued)
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Currentvs Case Temperature
Figure 11. Transient Thermal Response Curve
t1
PDM
t2
100
101
102
103
10-2
10-1
100
101
102
10 μs
DC10 ms
1 ms
100 μs
Operation in This Area is Limited by R
DS(on)
※ Notes :
1. TC = 25
oC
2. TJ = 150
oC
3. Single Pulse
I D, D
rain
Cur
rent
[A]
VDS
, Drain-Source Voltage [V]
25 50 75 100 125 1500
2
4
6
8
10
12
I D
, Dra
in C
urre
nt [A
]
TC, Case Temperature [ ]
Figure 7. Breakdown Voltage Variationvs Temperature
Figure 8. On-Resistance Variationvs Temperature
Z
θJC
(t),
The
rmal
Res
pons
e [o
C/W
]
FQ
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©2006 Fairchild Semiconductor CorporationFQA10N80C_F109 Rev. C2
www.fairchildsemi.com5
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
t on t off
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
t on t off
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
Charge
VGS
10VQg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF12V
Same Typeas DUT
Charge
VGS
10VQg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF12V
Same Typeas DUT
IG = const.
EAS = L IAS2----
21 --------------------
BVDSS - VDD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
I D
t p
EAS = L IAS2----
21
EAS = L IAS2----
21----21 --------------------
BVDSS - VDD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
I DI D
t p
VGSVGS
FQ
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©2006 Fairchild Semiconductor CorporationFQA10N80C_F109 Rev. C2
www.fairchildsemi.com6
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
DriverRG
Same Type as DUT
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
VDD
LI SD
10VVGS
( Driver )
I SD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =Gate Pulse Width
Gate Pulse Period--------------------------
DUT
VDS
+
_
DriverRG
Same Type as DUT
VGS • dv/dt controlled by RG
• ISD controlled by pulse period
VDD
LLI SD
10VVGS
( Driver )
I SD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =Gate Pulse Width
Gate Pulse Period--------------------------D =Gate Pulse Width
Gate Pulse Period--------------------------
FQ
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©2006 Fairchild Semiconductor CorporationFQA10N80C_F109 Rev. C2
www.fairchildsemi.com7
Mechanical Dimensions
Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any mannerwithout notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify orobtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3PN-003
FQ
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109 — N
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©2006 Fairchild Semiconductor CorporationFQA10N80C_F109 Rev. C2
www.fairchildsemi.com8
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PRODUCT STATUS DEFINITIONSDefinition of Terms
AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®
Dual Cool™EcoSPARK®
EfficentMax™ESBC™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™FACT®
FAST®
FastvCore™FETBench™FPS™
F-PFS™FRFET®
Global Power ResourceSM
GreenBridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louderand Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver®
OptoHiT™OPTOLOGIC®
OPTOPLANAR®
PowerTrench®
PowerXS™Programmable Active Droop™QFET®
QS™Quiet Series™RapidConfigure™
Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®
STEALTH™SuperFET®
SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®
SyncFET™
Sync-Lock™®*
TinyBoost®
TinyBuck®
TinyCalc™TinyLogic®
TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC™TriFault Detect™TRUECURRENT®*μSerDes™
UHC®
Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™
®
™
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Rev. I66
tm
®