Download - FDMS001N025DSD - PowerTrench Power Clip
© Semiconductor Components Industries, LLC, 2017
October, 2017 − Rev. 01 Publication Order Number:
FDMS001N025DSD/D
FDMS001N025DSD
PowerTrench� Power Clip
25 V Asymmetric Dual N−ChannelMOSFET
General DescriptionThis device includes two specialized N−Channel MOSFETs in a
dual package. The switch node has been internally connected to enableeasy placement and routing of synchronous buck converters. Thecontrol MOSFET (Q1) and synchronous SyncFET (Q2) have beendesigned to provide optimal power efficiency.
FeaturesQ1: N−Channel• Max rDS(on) = 3.25 m� at VGS = 10 V, ID = 19 A
• Max rDS(on) = 4 m� at VGS = 4.5 V, ID = 17 AQ2: N−Channel• Max rDS(on) = 0.92 m� at VGS = 10 V, ID = 38 A
• Max rDS(on) = 1.20 m� at VGS = 4.5 V, ID = 34 A
• Low Inductance Packaging Shortens Rise/Fall Times, Resulting inLower Switching Losses
• MOSFET Integration Enables Optimum Layout for Lower CircuitInductance and Reduced Switch Node Ringing
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant
Applications• Computing
• Communications
• General Purpose Point of Load
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PQFN8POWER CLIPCASE 483AR
GR
LSG
SW
SW
SW
V+
V+
HSG
PAD10 GND(LSS)
PAD9 V+(HSD)
GR
V+
LSG
SW
SW
SWV+
HSG
SW
1
See detailed ordering and shipping information on page 3 ofthis data sheet.
ORDERING INFORMATION
Pin Name Description
PIN ASSIGNMENT
1 HSG High Side Gate
2 GR Gate Return
3,4,9 V+(HSD) High Side Drain
5,6,7 SW Switching Node, Low Side Drain
8 LSG Low Side Gate
10 GND(LSS) Low Side Source
FDMS001N025DSD
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Table 1. MAXIMUM RATINGS TA = 25°C unless otherwise noted
Symbol Parameter Q1 Q2 Units
VDS Drain to Source Voltage 25 (Note 1) 25 V
VGS Gate to Source Voltage +16/−12V +16/−12V V
ID Drain Current −Continuous TC = 25°C (Note 2) 69 165 A
−Continuous TC = 100°C (Note 2) 43 104
−Continuous TA = 25°C 19 (Note 7a) 38 (Note 7b)
−Pulsed TA = 25°C (Note 3) 381 1240
EAS Single Pulse Avalanche Energy (Note 4) 121 337 mJ
PD Power Dissipation for Single Operation TC = 25°C 26 42 W
Power Dissipation for Single Operation TA = 25°C 2.1 (Note 7a) 2.3 (Note 7b)
TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be affected.1. The continuous VDS rating is 25 V; However, a pulse of 30 V peak voltage for no longer than 100 ns duration at 600 KHz frequency can be
applied.2. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro−mechanical application board design.3. Pulsed Id please refer to Figure 11 and Figure 24 SOA graphs for more details.4. Q1: EAS of 121 mJ is based on starting TJ = 25°C; N−ch: L = 3 mH, IAS = 9 A, VDD = 25 V. 100% tested at L = 0.1 mH, IAS = 29 A.
Q2: EAS of 337 mJ is based on starting TJ = 25°C; N−ch: L = 3 mH, IAS = 15 A, VDD = 25 V. 100% tested at L = 0.1 mH, IAS = 48 A.
Table 2. THERMAL CHARACTERISTICS
Symbol Parameter Q1 Q2 Units
R�JC Thermal Resistance, Junction to Case 4.9 3.0 °C/W
R�JA Thermal Resistance, Junction to Ambient 60 (Note 7a) 55 (Note 7b)
R�JA Thermal Resistance, Junction to Ambient 130 (Note 7c) 120 (Note 7d)
Table 3. ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 VID = 1 mA, VGS = 0 V
Q1Q2
2525
V
�BVDSS/�TJ
Breakdown Voltage Temperature Coefficient
ID = 10 mA, referenced to 25°CID = 10 mA, referenced to 25°C
Q1Q2
1528
mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 VVDS = 20 V, VGS = 0 V
Q1Q2
1500
�A�A
IGSS Gate to Source Leakage Current VGS = +16 V/−12 V, VDS = 0 VVGS = +16 V/−12 V, VDS = 0 V
Q1Q2
±100±100
nAnA
ON CHARACTERISTICS
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 320 �AVGS = VDS, ID = 1 mA
Q1Q2
0.81.0
1.31.5
2.53.0
V
�VGS(th)/�TJ
Gate to Source Threshold VoltageTemperature Coefficient
ID = 1 mA, referenced to 25°CID = 10 mA, referenced to 25°C
Q1Q2
−4−3
mV/°C
rDS(on) Drain to Source On Resistance VGS = 10 V, ID = 19 AVGS = 4.5 V, ID = 17 AVGS = 10 V, ID = 19 A,TJ =125°C
Q1 2.53.03.5
3.254.05.0
m�
VGS = 10 V, ID = 38 AVGS = 4.5 V, ID = 34 AVGS = 10 V, ID = 38 A,TJ = 125°C
Q2 0.700.920.96
0.921.201.38
FDMS001N025DSD
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Table 3. ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted
Symbol UnitsMaxTypMinTypeTest ConditionsParameter
ON CHARACTERISTICS
gFS Forward Transconductance VDS = 5 V, ID = 19 AVDS = 5 V, ID = 38 A
Q1Q2
98262
S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance Q1:VDS = 13 V, VGS = 0 V, f = 1 MHZ
Q2:VDS = 13 V, VGS = 0 V, f = 1 MHZ
Q1Q2
13705105
pF
Coss Output Capacitance Q1Q2
6251810
pF
Crss Reverse Transfer Capacitance Q1Q2
44173
pF
Rg Gate Resistance Q1Q2
0.10.1
0.40.3
1.21.0
�
SWITCHING CHARACTERISTICS
td(on) Turn−On Delay Time Q1:VDD = 13 V, ID = 19 A, RGEN = 6 �
Q2:VDD = 13 V, ID = 38 A, RGEN = 6 �
Q1Q2
815
1626
ns
tr Rise Time Q1Q2
25
1010
ns
td(off) Turn−Off Delay Time Q1Q2
2239
3462
ns
tf Fall Time Q1Q2
24
1010
ns
Qg Total Gate Charge VGS = 0 V to10 V
Q1VDD = 13 V, ID = 19 A
Q2VDD = 13 V, ID = 38 A
Q1Q2
2175
30104
nC
Qg Total Gate Charge VGS = 0 V to4.5 V
Q1Q2
9.735
1449
nC
Qgs Gate to Source Gate Charge Q1Q2
2.912
nC
Qgd Gate to Drain “Miller” Charge Q1Q2
2.07.9
nC
DRAIN−SOURCE DIODE CHARACTERISTICS
VSD Source to Drain Diode Forward Volt-age
VGS = 0 V, IS = 19 A (Note 6)VGS = 0 V, IS = 38 A (Note 6)
Q1Q2
0.80.8
1.21.2
V
IS Diode continuous forward current TC = 25°C (Note 2) Q1Q2
69125
A
IS,Pulse Diode pulse current TC = 25°C (Note 3) Q1Q2
3811240
A
trr Reverse Recovery Time Q1IF = 19 A, di/dt = 100 A/�sQ2IF = 38 A, di/dt = 300 A/�s
Q1Q2
2739
4462
ns
Qrr Reverse Recovery Charge Q1Q2
1255
2187
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.5. R�JA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R�CA is determined
by the user’s board design.6. Pulse Test: Pulse Width < 300 �s, Duty cycle < 2.0%.
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking Device Package Reel Size Tape Width Quantity
FDMS001N025DSD FDMS001N025DSD Power Clip 56 13” 12 mm 3000 units
FDMS001N025DSD
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G DF
DS
SF
SS
G DF
DS
SF
SS
G DF
DS
SF
SS
G DF
DS
SF
SS
(Note 7a) (Note 7b)
(Note 7c) (Note 7d)
7. a) 60°C/W when mounted on a 1 in2 pad of 2 oz copperb) 55°C/W when mounted on a 1 in2 pad of 2 oz copperc) 130°C/W when mounted on a minimum pad of 2 oz copperd) 120°C/W when mounted on a minimum pad of 2 oz copper
FDMS001N025DSD
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TYPICAL CHARACTERISTICS (Q1 N−Channel) TJ = 25°C unless otherwise noted
Figure 1. On Region Characteristics Figure 2. Normalized On−Resistance vs. DrainCurrent and Gate Voltage
Figure 3. Normalized On Resistance vs.Junction Temperature
Figure 4. On−Resistance vs. Gate to SourceVoltage
Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode ForwardVoltage vs. Source Current
0.0 0.5 1.0 1.5 2.00
15
30
45
60
75
90
VGS = 3 V VGS = 2.5 V
VGS = 10 V
VGS = 3.5 V
PULSE DURATION = 80 �sDUTY CYCLE = 0.5% MAX
VGS = 4.5 V
I D, D
RA
IN C
UR
RE
NT
(A
)
VDS, DRAIN TO SOURCE VOLTAGE (V)0 15 30 45 60 75 90
0
1
2
3
4
5
6
VGS = 3 V
VGS = 2.5 V
VGS = 4.5 V
PULSE DURATION = 80 �sDUTY CYCLE = 0.5% MAX
NO
RM
AL
IZE
DD
RA
IN T
O S
OU
RC
E O
N−R
ES
IST
AN
CE
ID, DRAIN CURRENT (A)
VGS = 10 VVGS = 3.5 V
−75 −50 −25 0 25 50 75 100 125 1500.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7ID = 19 AVGS = 10 V
NO
RM
AL
IZE
D D
RA
IN T
O S
OU
RC
E O
N−R
ES
IST
AN
CE
TJ, JUNCTION TEMPERATURE (oC)1 2 3 4 5 6 7 8 9 10
0
5
10
15
20
TJ = 125 oC
ID = 19 A
TJ = 25 oC
VGS, GATE TO SOURCE VOLTAGE (V)
r DS
(on
),D
RA
IN T
O
SO
UR
CE
ON
−RE
SIS
TA
NC
E(m
�) PULSE DURATION = 80 �s
DUTY CYCLE = 0.5% MAX
0 1 2 3 40
15
30
45
60
75
90
TJ = 150 oC
VDS = 5 V
PULSE DURATION = 80�sDUTY CYCLE = 0.5% MAX
TJ = −55oC
TJ = 25 oC
I D, D
RA
IN C
UR
RE
NT
(A
)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 10.001
0.01
0.1
1
10
100
TJ = −55oC
TJ = 25 oC
TJ = 150 oC
VGS = 0 V
I S, R
EV
ER
SE
DR
AIN
CU
RR
EN
T (
A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
FDMS001N025DSD
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TYPICAL CHARACTERISTICS (Q1 N−Channel) TJ = 25°C unless otherwise noted
Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to SourceVoltage
Figure 9. Unclamped Inductive SwitchingCapability
Figure 10. Maximum Continuous DrainCurrent vs. Case Temperature
Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum PowerDissipation
0 5 10 15 20 250
2
4
6
8
10
ID = 19 A
VDD = 15 V
VDD = 13 V
VG
S, G
AT
E T
O S
OU
RC
E V
OL
TA
GE
(V
)
Qg, GATE CHARGE (nC)
VDD = 10 V
0.1 1 10 251
10
100
1000
10000
f = 1 MHz
VGS = 0 V
CA
PA
CIT
AN
CE
(p
F)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
0.001 0.01 0.1 1 10 1001
10
100
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
I AS, A
VA
LA
NC
HE
CU
RR
EN
T (
A)
25 50 75 100 125 1500
20
40
60
80
VGS = 4.5 V
R�JC = 4.9 oC/W
VGS = 10 V
I D,D
RA
IN C
UR
RE
NT
(A
)
TC, CASE TEMPERATURE (oC)
0.1 1 10 1000.1
1
10
100
500
CURVE BENT TO
MEASURED DATA
10 �s
100 ms
10 ms
1 ms
100 �s
I D, D
RA
IN C
UR
RE
NT
(A
)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA ISLIMITED BY r DS(on)
SINGLE PULSE
TJ = MAX RATED
R�JC = 4.9 oC/W
TC = 25oC
10−5 10−4 10−3 10−2 10−1 110
100
1000
10000SINGLE PULSE
R�JA = 4.9oC/W
TA = 25oC
P( P
K),
PE
AK
TR
AN
SIE
NT
PO
WE
R (
W)
t, PULSE WIDTH (sec)
FDMS001N025DSD
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TYPICAL CHARACTERISTICS (Q1 N−Channel) TJ = 25°C unless otherwise noted
Figure 13. Junction−to−Case Transient Thermal Response Curve
10−5 10−4 10−3 10−2 10−1 10.001
0.01
0.1
1
2
SINGLE PULSE
DUTY CYCLE−DESCENDING ORDERr(
t), N
OR
MA
LIZ
ED
EF
FE
CT
IVE
TR
AN
SIE
NT
TH
ER
MA
L R
ES
IST
AN
CE
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
NOTES:
Z�JC(t) = r(t) x R�JC
R�JC = 4.9 oC/W
Duty Cycle, D = t1 / t2Peak T J = PDM x Z�JC(t) + TC
PDM
t1t2
FDMS001N025DSD
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TYPICAL CHARACTERISTICS (Q2 N−Channel) TJ = 25°C unless otherwise noted
Figure 14. On Region Characteristics Figure 15. Normalized On−Resistance vs.Drain Current and Gate Voltage
Figure 16. Normalized On Resistance vs.Junction Temperature
Figure 17. On−Resistance vs. Gate to SourceVoltage
Figure 18. Transfer Characteristics Figure 19. Source to Drain Diode ForwardVoltage vs. Source Current
0.0 0.1 0.2 0.30
15
30
45
60
75
90
VGS = 3 V
VGS = 2.5 V
VGS = 10 V
VGS = 3.5 V
PULSE DURATION = 80�sDUTY CYCLE = 0.5% MAX
VGS = 4.5 V
I D, D
RA
IN C
UR
RE
NT
(A
)
VDS, DRAIN TO SOURCE VOLTAGE (V)
0 15 30 45 60 75 900
3
6
9
12
15
VGS = 3 V
VGS = 2.5 V
VGS = 4.5 V
PULSE DURATION = 80 �sDUTY CYCLE = 0.5% MAX
NO
RM
AL
IZE
DD
RA
IN T
O S
OU
RC
E O
N−R
ES
IST
AN
CE
ID, DRAIN CURRENT (A)
VGS = 10 VVGS = 3.5 V
0 15 30 45 60 75 900
3
6
9
12
15
VGS = 3 V
VGS = 2.5 V
VGS = 4.5 V
PULSE DURATION = 80 �sDUTY CYCLE = 0.5% MAX
NO
RM
AL
IZE
DD
RA
IN T
O S
OU
RC
E O
N−R
ES
IST
AN
CE
ID, DRAIN CURRENT (A)
VGS = 10 VVGS = 3.5 V
0 1 2 3 40
15
30
45
60
75
90
TJ = 125 oC
VDS = 5 V
PULSE DURATION = 80 �sDUTY CYCLE = 0.5% MAX
TJ = −55 oC
TJ = 25 oC
I D, D
RA
IN C
UR
RE
NT
(A
)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.00.001
0.01
0.1
1
10
90
TJ = −55 oC
TJ = 25 oC
TJ = 125 oC
VGS = 0 V
I S, R
EV
ER
SE
DR
AIN
CU
RR
EN
T (
A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
−75 −50 −25 0 25 50 75 100 125 1500.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7ID = 38 A
VGS = 10 V
NO
RM
AL
IZE
D D
RA
IN T
O S
OU
RC
E O
N−R
ES
IST
AN
CE
TJ, JUNCTION TEMPERATURE (oC)
1 2 3 4 5 6 7 8 9 100
1
2
3
4
5
6
TJ = 125 oC
ID = 38 A
TJ = 25 oC
VGS, GATE TO SOURCE VOLTAGE (V)
r DS
(on
),D
RA
IN T
O
SO
UR
CE
ON
−RE
SIS
TA
NC
E (m�
)
PULSE DURATION = 80�sDUTY CYCLE = 0.5% MAX
FDMS001N025DSD
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TYPICAL CHARACTERISTICS (Q2 N−Channel) TJ = 25°C unless otherwise noted
Figure 20. Gate Charge Characteristics Figure 21. Capacitance vs. Drain to SourceVoltage
Figure 22. Unclamped Inductive SwitchingCapability
Figure 23. Maximum Continuous DrainCurrent vs. Case Temperature
Figure 24. Forward Bias Safe Operating Area Figure 25. Single Pulse Maximum PowerDissipation
0 16 32 48 64 800
2
4
6
8
10
ID = 38 A
VDD = 15 V
VDD = 13 V
VG
S, G
AT
E T
O S
OU
RC
E V
OL
TA
GE
(V
)
Qg, GATE CHARGE (nC)
VDD = 10 V
0.1 1 10 2510
100
1000
10000
f = 1 MHz
VGS = 0 V
CA
PA
CIT
AN
CE
(p
F)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
0.001 0.01 0.1 1 10 100 10001
10
100
TJ = 125 oC
TJ = 25 oC
TJ = 100 oC
tAV, TIME IN AVALANCHE (ms)
I AS, A
VA
LA
NC
HE
CU
RR
EN
T (
A)
25 50 75 100 125 1500
40
80
120
160
200
VGS = 4.5 V
R�JC = 3.0 oC/W
VGS = 10 VI D
,DR
AIN
CU
RR
EN
T (
A)
TC, CASE TEMPERATURE (oC)
0.1 1 10 1000.1
1
10
100
10002000
CURVE BENT TO
MEASURED DATA
10 �s
100 ms10 ms
1 ms
100 �s
I D, D
RA
IN C
UR
RE
NT
(A
)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
R �JC = 3.0oC/W
TC = 25oC
10−5 10−4 10−3 10−2 10−1 110
100
1000
10000
100000SINGLE PULSE
R�JC = 3.0oC/W
TC = 25oC
P( P
K),
PE
AK
TR
AN
SIE
NT
PO
WE
R (
W)
t, PULSE WIDTH (sec)
FDMS001N025DSD
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TYPICAL CHARACTERISTICS (Q2 N−Channel) TJ = 25°C unless otherwise noted
Figure 26. Junction−to−Case Transient Thermal Response Curve
10−5 10−4 10−3 10−2 10−1 10.001
0.01
0.1
1
2
SINGLE PULSE
DUTY CYCLE−DESCENDING ORDERr(
t), N
OR
MA
LIZ
ED
EF
FE
CT
IVE
TR
AN
SIE
NT
TH
ER
MA
L R
ES
IST
AN
CE
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01NOTES:
Z�JC(t) = r(t) x R�JC
R�JC = 3.0 oC/W
Duty Cycle, D = t1 / t2
Peak T J = PDM x Z�JC(t) + TC
PDM
t1t2
FDMS001N025DSD
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TYPICAL CHARACTERISTICS (continued)
ON Semiconductor’s SyncFET process embeds aSchottky diode in parallel with PowerTrench MOSFET.This diode exhibits similar characteristics to a discreteexternal Schottky diode in parallel with a MOSFET.Figure 27 shows the reverses recovery characteristic of theFDMS001N025DSD.
Schottky barrier diodes exhibit significant leakage at hightemperature and high reverse voltage. This will increase thepower in the device.
0 5 10 15 20 2510−6
10−5
10−4
10−3
10−2
TJ = 125 oC
TJ = 100 oC
TJ = 25 oC
I DS
S, R
EV
ER
SE
LE
AK
AG
E C
UR
RE
NT
(A
)
VDS, REVERSE VOLTAGE (V)100 150 200 250 300 350 400
−5
0
5
10
15
20
25
30
35
40
45
didt = 239 A/�s
CU
RR
EN
T (
A)
TIME (ns)
Figure 27. FDMS001N025DSD SyncFET BodyDiode Reverse Recovery Characteristic
Figure 28. SyncFET Body Diode Reverse Leakagevs. Drain−Source Voltage
PowerTrench is a registered trademark of Semiconductor Components Industries, LLC.
PQFN8 5x6, 1.27PCASE 483AR
ISSUE ADATE 21 MAY 2021
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor therights of others.
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