Energy Distribution in HostileEnergy Distribution in Hostile Environment:
Power Converters and Devices
Mauro CitterioMauro Citterioon behalf of the INFN-APOLLO project
Mauro Citterio ICATPP Como – 10/4/2011 1
INDEXINDEX
• The ATLAS LAr Calorimeter System …. a test case
• The Proposed Power Distribution for an Upgraded LArSystem
• Characteristics of Power MOSFETs under irradiation
• - exposed to ionizing radiation (gamma 60Co)75• - exposed to heavy ions (75Br at 155 MeV)
• - exposed to protons (216 MeV)
• Conclusions
Mauro Citterio ICATPP Como – 10/4/2011 2
The ATLAS experiment
LA b l l i tLAr barrel calorimeter
The power distribution and conversion scheme
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in the detector area
ATLAS Experiment: Lar Barrel CalorimeterDetails of the Front End Electronics and Main Power Converter
The required qualification doses for this application are:
4.5 x 104 rad and 2 x 1012 particles/cm2 (> 20 MeV)
Mauro Citterio ICATPP Como – 10/4/2011 4
4.5 x 10 rad and 2 x 10 particles/cm2 ( 20 MeV)
Ten times higher for Hi-LHC scenario (70 safety factor)!!!
ATLAS Experiment: Present StatusLAr Calorimeter Front-End Board (FEB) Power Distribution
19 LDO regulators/FEB19 LDO regulators/FEB
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Proposed Power Supply Distribution Scheme for a LAr Upgrade
CRATECard #3
MORE INFO TAKE A LOOKAT THE DEDICATED POSTER !!!
280 Vdc
POLLDO Converter
POLLDO
Card #2
POLLDO Converter
Card #1
MainDC/DC
Converter
POLConverter
POLLDO Converter
POLLDO Converter
POLniPOLConverter
POLniPOL
POLLDO Converter
POLConverter
POLniPOL Converter
Regulated DC bus
O CPOL Converter with high step-down ratioCharacteristics:• Main isolated converter with N+1 redundancy
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y• High DC bus voltage (12V or other)• Distributed Non-Isolated Point of Load Converters (niPOL) with high step-down ratio
The Main ConverterCritical Elements for a LAr Upgrades
QC+
The Point of Load
S S L
Q
Q4T
1C
C4 L
Vou+
C TiL+
S1
S2
S4
L1
C RC
Uin Uo
+
U+
Q
3 oVin
t-3
C2
3
iTT+
4 Co
RC1 L
2
-UC
1-
Q1
22
C1
T2
T2
4
+Vout = 12V
S3 D<50% Uo = UinD/2
Switched In Line Converter SILC
- Required Mosfet Voltage
POL Specifications:Input voltage: Ug = 12 VOutput voltage: U = 2 5 VBreakdown: ~ 200 Volt or higher
- Mosfets, diodes and controller must be qualified against radiation
Output voltage: Uo = 2.5 VOutput current: Io = 3AOperating frequency: fs = 1 MHz
Mauro Citterio ICATPP Como – 10/4/2011 7
be qualified against radiation 350 nH air core inductors
Power Mosfets exposed to gamma rays
Devices under test:
30V STP80NF03L 0430V STP80NF03L-04
30V LR7843
200V IRF630
For each type of device 20 samples were tested, 5 for each dose value
200V IRF630 (tested at the ENEA Calliope Test Facility)
Used doses:Measurements :
Breakdown Voltage @ VGS=-10VI 1600 Gray
II 3200 Gray
Breakdown Voltage @ VGS 10V
Threshold Voltage @ VDS=5V
ON Characteristic @ VGS=10V
III 5890 Gray
IV 9600 Gray
@
Gate Leakage @ VDS=10V
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y
30 V Mosfet: STP80NF03L-04
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30 V Mosfet: LR7843
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200 V Mosfet: IRF630
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Mosfet Exposed to Heavy Ions.The SEE frameworkThe SEE framework
Destructive Single Event Effects in Power MOSFETS (tested at INFN Catania)GateSource GateSource
(tested at INFN Catania)
N+P
_
Body
N+ N+P
_
Body
N+
P +
P N
P +
P N
N_ N_
N + N +
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Drain Drain
Single Event Burnout Single Event Gate Rupture
The SEE experimental set-upThe IGSS evolution during irradiation
1 0
-0.5
0
e C
urre
nt [
μ A ]
g
0 500 1000 1500 2000-2.0
-1.5
-1.0
Ti [ ]
Gat
e Le
akag
e
Parameter AnalyzerGateSource
1 MΩ1 MΩ
Vgs VdsTime [s]
N+
P _
Body
N+
Cg
Cd
50 Ω
50 ΩImpacting Ion DUT
15
The current pulses
P+
50 Ω
5
1
5
Cur
rent
[mA
]
N+
N_
20 40 60 80 100 120
0
Time [ns]
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Fast Sampling OscilloscopeDrain
The SEE analysis
1.5
0
TIME DOMAIN WAVEFORMS SCATTER PLOT
1
1.5
0
0.5
1
Cur
rent
[mA
]
20 40 60 80 100 120
0
0.5
1
Time [ns]
2.5
x 1011
14
164.5
5x 1010
1
1.5
2
50 100 1508
10
12
14
Cha
rge
[pC
]
2
2.5
3
3.5
4
0 10 30 400
0.5
1
Charge [pC]
50 100 150Vds [V]
Vds
10 20 30 40 10 20 30 40
0.5
1
1.5
Charge [pC]
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Charge [pC] Charge [pC]
MEAN CHARGE vs BIAS VOLTAGE Γ-LIKE DISTRIBUTION FUNCTION
The SEE experimental resultsp
200 V Mosfet: IRF630
Devise TID Bias Conditions during Irradiation
Drain Damage Gate Damage
D21 0Gy Vds=20V-110V vgs=-2V Vds=100V-110V Vds=100V-110VD22 0Gy Vds=20V-120V vgs=-6V Vds=110V-120V Vds=100V-110VD06 1600Gy Vds=20V-70V vgs=-2V Vds=60V-70V Vds=60V-70VD10 3200Gy Vds=20V-50V vgs=-6V Vds=40V-50V Vds=40V-50VD14 5600Gy Vds=20V-55V vgs=-6V Vds=50V-55V Vds=40V-50VD16 5600Gy Vds=20V-50V vgs=-6V Vds=45V-50V Vds=40V-45VD17 9600Gy Vds=20V-45V vgs=-6V Vds=40V-45V Vds=40V-45V
Mauro Citterio ICATPP Como – 10/4/2011 15
The SEE experimental results
0.3
0.35
0.4D21 0Gy Vds=110V Vgs=-2V
0.1
0.15
0.2
0.25
Cur
rent
[mA
]
0 20 40 60 80 100 120 140 160 180 200
0
0.05
Time [ns]35
D21 0Gy Vds=110V Vgs=-2V
20
25
30
35
A]2 6
2.8
5
10
15
20
Cur
rent
[mA
2.0
2.2
2.4
2.6
rge
[pC
]
0 20 40 60 80 100 120 140 160 180 200
0
Time [ns]1.4
1.6
1.8Cha
r
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20 30 40 50 60 70 80 90 100Vds [V]
The SEE experimental resultsScatter-plot Vds=50V
100
120
D21 0GyD10 3200GyD14 5600G
40
60
80
rrent
[ μA
]
D14 5600GyD17 9600Gy
0
20
40
Cur
0 20 40 60 80 100 120 140 160 180 200-20Time [ns]
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Mosfet Exposed to ProtonsSEB characterization
Characterization requires that an SEB circumvention method be utilized
SEB characterization produces a cross-sectional area curve as a function of LET for a fixed VDS
SEB characterization
SEB characterization produces a cross-sectional area curve as a function of LET for a fixed VDS and VGS.
Generally SEB is not sensitive to changes in the gate bias, VGS. However, the VGS bias shall be sufficient to bias the DUT in an “off” state (a few volts below ff ff ( fVTH), allowing for total dose effects that may reduce the VTH.
The only difference in the testThe only difference in the test set-up was that the current probe
was on the Mosfet Source
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Mosfet Exposed to Protons
The results are still preliminary. Only the 200V Mosfets (IRF 630, samples from two different manufacturers) were exposed
Proton energy: 216 MeV (facility at Massachusetts General Hospital, Boston)Ionizing Dose: < 30 Krads
A “ b l t ” ti ill i th k ld f th f th M f t di hi h iAn “absolute” cross section will require the knowldege of the area of the Mosfet die which is unknown.
10-7IRF630 - ST
10-7
IRF630 - International Rectifier
10-9
10-8
cm-2
]10-8
m-2
]
10-10
10-9
oss
Sect
ion
[c10-10
10-9
ss S
ectio
n [c
m
10-12
10-11
Cro
10-11
Cro
s
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10182 184 186 188 190 192 194 196
VDS [Volt]
10-12
175 180 185 190 190 195
VDS [Volt]
Mosfet Exposed to Protons
The number of SEB events recorded at each VDS was small
Work still in progress ……………..
less then 30 events for the STless than 150 events for the IR devices
Large statistical errors affect the measurements
The cross section at VDS = 150 V (“de rated” operating voltage) can not beThe cross section at VDS = 150 V ( de-rated operating voltage) can not be properly estimated
Dependence from manufacturer“Knee” not well definedKnee not well defined
• To effectively qualify the devices for 10 years of operation at Hi-LHC, the cross section has to be of the order of 10-17/ cm2 which puts the failure rate atcross section has to be of the order of 10 / cm , which puts the failure rate at <1 for 10 years of operation
P t i di ti i ith i d fl d l
Mauro Citterio ICATPP Como – 10/4/2011 20
• Proton irradiation campaigns with increased fluences and more samples are planned.
Conclusions
Distributed Power Architecture has been proposedMain converter (SILC topology)( p gy)Point of load converter (IBDV topology)
Critical selcction of components to proper withstand radiationCritical selcction of components to proper withstand radiationController, Driver and IsolatorFPGA for overall monitoringMOSFETSMOSFETS
MOSFETS, both for main converter and POL have been selected and testedGGamma rayHeavy ionsProtons
Some results are encouraging, however more systematic validation is on-goingNovel devices based on SiC and GaN, are also under investigation
Mauro Citterio ICATPP Como – 10/4/2011 21
g