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ECE 353Introduction to Microprocessor Systems
Michael J. Schulte
Week 8
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Topics80C188 system designPeripheral Control Block (PCB)Characteristics of ROM and RAM ICsOrganization and operation of typical static RAM, EPROM and flash memory devicesMemory subsystem designAddress decoder implementation80C188EB Chip-Select Unit (CSU)
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80C188EB System DesignMinimum-component system PSD9XXF
Single and multi-board systems Custom single board system COTS Single Board Computer Custom multi-board system Multi-board standard bus system SoC
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Peripheral Control Block (PCB)
Configuration, control and operation of the 80C188EB’s integrated peripherals Diagram
128 contiguous word registers All PCB transfers are 16-bits over F-bus External bus cycles are still run At reset, PCB base address = FF00h in
I/O
pcb.incRelocating the PCB RELREG
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Memory SubsystemsROM Masked OTP PROM EPROM EEPROM Flash
RAM SRAM DRAM Pseudo-SRAM Flash – non volatile RAM
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Memory OrganizationLogical organization Organization as seen looking at the
device from the outside Linear array of registers (memory
locations)
Physical organization Different physical organizations can be
used to implement the same logical organization
Physical organization affects performance and cost
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SRAM InterfacesRAM with 3 control inputs /CS, /OE, /WE Read Write
RAM with 2 control inputs /CS, /WE (or R/W)
/CS
/WE
/OE
internal write signal
internal read signal
/CS
/WEinternal write signal
internal read signal
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SRAM OrganizationLogical Organization Typically 1, 4 , 8 or 16 bit widths
Physical Organization Rectangular bit array Two-level decoding (row and column) Characteristic delays and timing requirements are
specified in memory devices datasheet (Example)
NV-SRAM Uses an alternate power source to maintain SRAM
when system power is off Requires logic to switch power sources and
prevent spurious writes during power-up/power-down
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EPROMElectrically programmable, non-volatileRequires UV light to erase Quartz window in package
Floating polysilicon gate avalanche injection MOS transistor (FAMOS) Operation
Programmer loads device out-of-circuitOTP EPROMs eliminate quartz windowEEPROMs are electrically erasable Byte-erasable / writeable Low-density
JEDEC Packages
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Flash MemoryActually Flash EEPROM, commonly just called flash memoryCharacteristics Technologies Endurance Blocking, programming and erasing
Applications ROM replacement GP NV-RAM Solid-state disk (flash-disk) Example
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Memory Subsystem Design
Memory banks Increasing memory width Increasing memory depth Increasing memory width and depth
Address decoding Exhaustive (full) vs. partial decoding Granularity Boundaries
If an address is a 2n boundary, then what is the result of (address AND (2n-1))?
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Memory Subsystems Review
What is the purpose of an address decoder circuit, and where does its output usually get connected?What is exhaustive decoding, and what effects does it have?What is partial decoding, and what effects does it have?
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80C186EB Memory Subsystem
Organization Logical Physical
Word operations Aligned words Unaligned words
Byte operations 80C186EB control signals
Byte-wide peripherals
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Memory ArchitecturesWide (n-byte) buses Addressing effects Byte transfer support
Data lanes Control signals
Bus resizing Static Configurable Dynamic
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80C188EB Chip Select Unit (CSU)
10 programmable chip selects /UCS, /LCS /GCS0 - /GCS7
Configuration Active address range Memory or I/O space Wait states Enable / disable Use or ignore READY
Programming Chip-Select Start Register Chip-Select Stop Register
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External Address DecodersSSI/MSI Decoders Discrete gates 1-of-n Decoders
74xx138 Partial decoding issues
PLD Decoders PLAs PALs
PALCE22V10
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PCB
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pcb.inc;***********************************************;** I80C188 **;** **;** Peripheral Control Block **;** Include File for **;** I/O Mapping **;** **;***********************************************
PCBB EQU 0FF00H ; PCB Base Address
;Register Address
INTRVEC EQU PCBB + 0020H ; Interrupt Vector RegisterINTRMSK EQU PCBB + 0028H ; Interrupt Mask RegisterPRIRMSK EQU PCBB + 002AH ; Priority Mask RegisterINSERV EQU PCBB + 002CH ; In-Service Register
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RELREG
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Chip-Select Start Reg
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Chip-Select Stop Register-Part 1
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Chip-Select Stop Register -Part 2
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Memory Organization
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Physical Organization
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JEDEC
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Flash Blocks
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Flash Memory Application:Disk-on-Key
Up to 1GB nonvolatile storageNo battery or power supply
Specifications:Size: 85x28x15mm (LxWxH) Weight: 17g Data retention up to 10 years Power consumption:
Write 36.0mA, Read 33.0mA Erase cycles: 1,000,000 times Read speed > 750KB / sec. Write speed >450 / sec. Shock resistance: 1000 G (maximum)
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PALCE22V10 Organization
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PALCE22V10 Macrocell
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RAM Read – 3 control signals
/CS
Dx
Ax
/OE
/WE
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RAM Write – 3 control signals
/CS
Dx
Ax
/OE
/WE
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Cypress PSoC
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Increasing Memory Depth
CE
A0
A15 D7
D0
CE
A0
A14 D7
D0
CE
A0
A14 D7
D0
Extending Depth
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Increasing Memory Width
CE
A0
A15 D7
D0
CE
A0
A15 D3
D0
CE
A0
A15 D3
D0
Extending Width
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Increasing Memory Depth & Width
CE
A0
A15 D7
D0CE
A0
A14 D3D0
Extending Width and Depth
CE
A0
A14 D3D0
CE
A0
A14 D3D0
CE
A0
A14 D3D0