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Don’t Forget the Memory…
Dean Klein, VP Advanced Memory
Solutions
Micron Technology, Inc.
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Memory is Everywhere
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One size DOES NOT fit all…
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Question:
• How many different memories does your computer
use?
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The Evolving Memory Hierarchy
Level 1 Cache
Level 2 Cache
Main Memory
Disk Boot ROM
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Question:
• How many different memories does your cell phone
use?
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The Cell Phone Memory Hierarchy
Instruction Cache
Data Cache
Boot ROM
uSD Card NAND
NAND Flash
LPDRAM
MCP
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What is the Ideal Memory?
• Fast – to keep pace with processors
• Reliable – not susceptible to corruption
• Low cost – pennies per mm2
• Small – helps with low cost, but also for new
platforms
• Embeddable – ability to be integrated with logic
• Low power – for dense systems and un-tethered
systems
• Non-volatile – no power required to retain data
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Benefit of Shrinking
• The ability to fit more bits on a wafer,
thereby reducing the cost of those bits:
“Shrink-o-nomics”
• The ability to add features to a product,
thereby increasing performance.
• The ability to lower the power of the device.
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DRAM Operation
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NAND Flash Memory
• The “ideal” memory?
• Non-volatile
• Small cells – Under 6F2
• Low cost process
• Scaleable?
• Wear issues?
• Slow writes
• Ideal for some applications
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NAND Operation
• Control Gate traps
electrons injected by
Fowler-Nordheim
tunneling.
• Voltages of up to 20V
exist during cell
programming. p-sub
N-well
p-well N+ N+
Source Drain
ControlGate
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NAND Programming Operation
• Control Gate traps
electrons injected by
Fowler-Nordheim
tunneling.
• Voltages of up to 20V
exist during cell
programming. p-sub
N-well
p-well N+ N+
Source
Open
Drain
0V
ControlGate
20V
0V
0V
0V
Cell is programmed to “0”
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NAND Storage Operation
• Control Gate traps
electrons injected by
Fowler-Nordheim
tunneling.
• Voltages of up to 20V
exist during cell
programming. p-sub
N-well
p-well N+ N+
Source
Drain
ControlGate
Cell retains its “0” state
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NAND Read Operation
• Control Gate traps
electrons injected by
Fowler-Nordheim
tunneling.
• Voltages of up to 20V
exist during cell
programming. p-sub
N-well
p-well N+ N+
Source
Reads 0V
Drain
4.5V
ControlGate
0V
0V
0V
0V
Cell read in “0” state
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NAND Read Operation
• Control Gate traps
electrons injected by
Fowler-Nordheim
tunneling.
• Voltages of up to 20V
exist during cell
programming. p-sub
N-well
p-well N+ N+
Source
Reads >0V
Drain
4.5V
ControlGate
0V
0V
0V
0V
Cell read in “1” state
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3D NAND Performance Relative to Planar NAND
Vt
Nu
mb
er
of
bit
s
2D NAND (scaled) 3D NAND
90nm 70nm
50nm 34nm
25nm
20nm
16nm
4
16
64
256
1024
Ele
ctr
ons p
er
level
Node
Planar 3D
3D NAND cell design simultaneously improves performance and reliability • Vertical stacking allows
large number of electrons per cell independent of scaling
• No longer relying on lithography to continue scaling
• Decreased interference between cells translates into higher cycling endurance
September
Nu
mb
er
of
Ce
lls
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3D NAND
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Introducing 3D XPoint™
3D XPoint
1000X FASTER
THAN NAND
1000X ENDURANCE
OF NAND
10X DENSER
THAN CONVENTIONAL MEMORY
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3D XPoint™ Memory
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Questions:
• In 1982, as the personal computer became
successful, how many memory bits were there in a
standard memory chip?
• In 2015 how many memory bits are in a leading edge
standard NAND Flash memory chip?
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Questions:
1. How fast is the speed of light?
2. How far can light travel in the single “tick” of a 3GHz
processor clock?
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Question:
• How many ticks of the 3GHz processor clock does it
take to access the average piece of data on a
7200RPM hard drive?
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Why SSD’s?
• Performance
• Power
• Reliability
• New form factors
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SSD: Power and Performance
SSDs do more with less power
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Questions:
• How many operations per second (IOPS) can a high-
end hard drive sustain?
• How many operations per second (IOPS) can a high-
end NAND flash-based SSD (i.e. Micron P320H)
sustain?
* Limited by CPU performance. 1.7M IOPS per SSDReview.com with overclocked CPU. October 15, 2012
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HDD & SSD in the Enterprise Server Market
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New Form Factors
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Desktop Supercomputers?
Cray 1A Supercomputer
• 80MHz CPU, 16-bit instructions, 64-bit words
• 136 Mflops
• 8MB main memory
• 640MB/sec memory BW
• 115KW operating power
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Handheld Supercomputer!
iPhone 6
• 1GHz Dual core 32-bit CPU (~2000MHz) ~
12X
• 450MHz GPU 25.5 GFLOP ~ 200X
• 1GB DRAM main memory ~ 128X
• 8.5GB/sec memory BW ~ 12X
• 0.45W avg. operating power: 1/250,000th!
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Memory Research Areas
• DRAM:
New materials: High-K gates, Low-K dielectrics
New structures: 3D transistors, lattices, TSV’s
New features: Low power, DDR4
New architectures: HMC , HBM
New packaging: 3D integration
• NAND:
New materials
New dimensions:3D NAND cells
New “Systems”: SSD’s
• 3DX:
New dimensions: 3D
• New Types:
MRAM, STT-RAM, Programmable conductor
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Top 10 Reasons You Want to Be an Engineer
1. For the great memories!
2. It rationalizes why you always took things apart as a kid
3. You always were fascinated by trains
4. It sure beats flippin’ burgers!
5. You love calculus, differential equations, numerical analysis…
6. At least your computer/phone/tablet listens to you
7. You would have been a doctor or a lawyer, but where’s the
challenge?
8. You believe anything is possible
9. You’re going to get rich off that cold fusion project you have
going in your bathtub
10. It’s logical
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Final Advice:
Be a “T” person!
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Questions?
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