-
C(2, TAB)
E(3)NG1E3C2T
G(1)
Features• Maximum junction temperature: TJ = 175 °C• Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A• Very fast and soft recovery co-packaged diode• Minimized tail current• Tight parameter distribution• Low thermal resistance• Positive VCE(sat) temperature coefficient
Applications• Welding• Power factor correction• UPS• Solar inverters• Chargers
DescriptionThe newest IGBT 650 V HB2 series represents an evolution of the advancedproprietary trench gate field-stop structure. The performance of the HB2 series isoptimized in terms of conduction, thanks to a better VCE(sat) behavior at low currentvalues, as well as in terms of reduced switching energy. A very fast soft recoverydiode is co-packaged in antiparallel with the IGBT. The result is a product specificallydesigned to maximize efficiency for a wide range of fast applications.
Product status link
STGWA50H65DFB2
Product summary
Order code STGWA50H65DFB2
Marking G50H65DFB2
Package TO-247 long leads
Packing Tube
Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO‑247 long leads package
STGWA50H65DFB2
Datasheet
DS13185 - Rev 1 - December 2019For further information contact your local STMicroelectronics sales office.
www.st.com
https://www.st.com/en/product/STGWA50H65DFB2?ecmp=tt9470_gl_link_feb2019&rt=ds&id=DS13185
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1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VGE = 0 V) 650 V
ICContinuous collector current at TC = 25 °C 86
AContinuous collector current at TC = 100 °C 53
ICP (1)(2) Pulsed collector current 150
VGEGate-emitter voltage ±20
VTransient gate-emitter voltage (tp ≤ 10 μs) ±30
IFContinuous forward current at TC = 25 °C 60
AContinuous forward current at TC = 100 °C 38
IFP(1) Pulsed forward current (tp ≤ 1 μs, TJ < 175 °C) 150
PTOT Total power dissipation at TC = 25 °C 272 W
TSTG Storage temperature range -55 to 150°C
TJ Operating junction temperature range -55 to 175
1. Defined by design, not subject to production test.2. Pulse width is limited by maximum junction temperature.
Table 2. Thermal data
Symbol Parameter Value Unit
RthJCThermal resistance junction-case IGBT 0.55
°C/WThermal resistance junction-case diode 1.14
RthJA Thermal resistance junction-ambient 50
STGWA50H65DFB2Electrical ratings
DS13185 - Rev 1 page 2/15
-
2 Electrical characteristics
TC = 25 °C unless otherwise specified
Table 3. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)CESCollector-emitter breakdownvoltage VGE = 0 V, IC = 1 mA 650 V
VCE(sat)Collector-emitter saturationvoltage
VGE = 15 V, IC = 50 A 1.55 2
V
VGE = 15 V, IC = 50 A,
TJ = 125 °C1.8
VGE = 15 V, IC = 50 A,
TJ = 175 °C1.9
VF Forward on-voltage
IF = 50 A 1.85 2.45
VIF = 50 A, TJ = 125 °C 1.65
IF = 50 A, TJ = 175 °C 1.45
VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V
ICES Collector cut-off current VGE = 0 V, VCE = 650 V 25 µA
IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA
Table 4. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
Cies Input capacitanceVCE = 25 V, f = 1 MHz,
VGE = 0 V
- 2928 -
pFCoes Output capacitance - 162 -
Cres Reverse transfer capacitance - 78 -
Qg Total gate charge VCC = 520 V, IC = 50 A,
VGE = 0 to 15 V
(see Figure 28. Gate charge testcircuit)
- 151 -
nCQge Gate-emitter charge - 30 -
Qgc Gate-collector charge - 63 -
STGWA50H65DFB2Electrical characteristics
DS13185 - Rev 1 page 3/15
-
Table 5. Switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time
VCC = 400 V, IC = 50 A,
VGE = 15 V, RG = 4.7 Ω
(see Figure 27. Test circuit forinductive load switching)
- 28 - ns
tr Current rise time - 20 - ns
Eon(1) Turn-on switching energy - 910 - μJ
td(off) Turn-off delay time - 115 - ns
tf Current fall time - 40 - ns
Eoff (2) Turn-off switching energy - 580 - µJ
td(on) Turn-on delay time
VCC = 400 V, IC = 50 A,
VGE = 15 V, RG = 4.7 Ω,
TJ = 175 °C
(see Figure 27. Test circuit forinductive load switching)
- 24 - ns
tr Current rise time - 17 - ns
Eon(1) Turn-on switching energy - 1800 - μJ
td(off) Turn-off delay time - 135 - ns
tf Current fall time - 90 - ns
Eoff (2) Turn-off switching energy - 1090 - µJ
1. Including the reverse recovery of the diode.2. Including the tail of the collector current.
Table 6. Diode switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
trr Reverse recovery time
IF = 50 A, VR = 400 V,
VGE = 15 V, di/dt = 1000 A/µs
(see Figure 30. Diode reverserecovery waveform)
- 92 - ns
Qrr Reverse recovery charge - 673 - nC
Irrm Reverse recovery current - 20.9 - A
dIrr/dtPeak rate of fall of reverserecovery current during tb
- 675 - A/µs
Err Reverse recovery energy - 138 - µJ
trr Reverse recovery timeIF = 50 A, VR = 400 V,
VGE = 15 V, di/dt = 1000 A/µs,
TJ = 175 °C
(see Figure 30. Diode reverserecovery waveform)
- 209 - ns
Qrr Reverse recovery charge - 3500 - nC
Irrm Reverse recovery current - 45.8 - A
dIrr/dtPeak rate of fall of reverserecovery current during tb
- 600 - A/µs
Err Reverse recovery energy - 841 - µJ
STGWA50H65DFB2Electrical characteristics
DS13185 - Rev 1 page 4/15
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2.1 Electrical characteristics (curves)
Figure 1. Power dissipation vs case temperature
GADG041220191034PDT
250
200
150
100
50
025 75 125 175
PTOT (W) ≥ ≤
TC (°C)
Figure 2. Collector current vs case temperature
GADG041220191035CCT
80
60
40
20
025 75 125 175
IC (A)
TC (°C)
VGE ≥ 15 V, TJ ≤ 175 °C
Figure 3. Output characteristics (TJ = 25 °C)
GADG041220191035OC25
125
100
75
50
25
00 1 2 3 4 5
IC (A)
VCE (V)
VGE = 9 V
VGE = 7 V
VGE = 11 VVGE = 13 V
VGE = 15 V
Figure 4. Output characteristics (TJ = 175 °C)
GADG041220191036OC175
125
100
75
50
25
00 1 2 3 4 5
IC (A)
VCE (V)
VGE = 9 V
VGE = 7 V
VGE = 11 VVGE = 13 V
VGE = 15 V
Figure 5. VCE(sat) vs junction temperature
GADG041220191036VCET
2.6
2.3
2.0
1.7
1.4
1.1
0.8-50 0 50 100 150
VCE(SAT) (V)
TJ (°C)
IC = 25 A
IC = 50 A
IC = 100 A
VGE = 15 V
Figure 6. VCE(sat) vs collector current
GADG041220191037VCEC
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.40 25 50 75 100 125
VCE(SAT) (V)
IC (A)
VGE = 15 V
TJ = 25 °C
TJ = -40 °C
TJ = 175 °C
STGWA50H65DFB2Electrical characteristics (curves)
DS13185 - Rev 1 page 5/15
-
Figure 7. Collector current vs switching frequency
GADG051220191302CCS
80
60
40
20
010 0 10 1 10 2
IC (A)
f (kHz)
Rectangular current shape(duty cycle = 0.5, VCC = 400 V,RG = 4.7 Ω, VGE = 0/15 V , Tj = 175 °C
TC = 80 °C
TC = 100 °C
Figure 8. Forward bias safe operating area
IGBT061220191241FSOA
10 2
10 1
10 0 10 0 10 1 10 2
IC (A)
VCE (V)
tp = 1 µs
tp = 10 µs
tp = 100 µs
tp = 1 msSingle pulse, TC = 25 °C,TJ ≤ 175 °C, VGE = 15 V
Figure 9. Transfer characteristics
GADG041220191038TCH
125
100
75
50
25
04 6 8 10
IC (A)
VGE (V)
Tj = 175 °C
Tj = 25 °C
VCE = 6 V
Figure 10. Diode VF vs forward current
IGBT230216EWF6GDVF
2.3
2.0
1.7
1.4
1.1
0.820 30 40 50 60 70 80
VF (V)
IF (A)
TJ = -40 °C
TJ = 25 °C
TJ = 175 °C
Figure 11. Normalized VGE(th) vs junction temperature
GADG300120191024NVGE
1.1
1.0
0.9
0.8
0.7
0.6-50 0 50 100 150
VGE(th) (norm.)
TJ (°C)
VCE = VGEIC = 1 mA
Figure 12. Normalized V(BR)CES vs junction temperature
GADG300120191024NVBR
1.08
1.04
1.00
0.96
0.92-50 0 50 100 150
V(BR)CES (norm.)
TJ (°C)
IC = 1 mA
STGWA50H65DFB2Electrical characteristics (curves)
DS13185 - Rev 1 page 6/15
-
Figure 13. Capacitance variations
GADG041220191039CVR
10 3
10 2
10 1 10 -1 10 0 10 1 10 2
C (pF)
VCE (V)
Cies
Coesf = 1 MHz
Cres
Figure 14. Gate charge vs gate-emitter voltage
GADG091220190907GCGE
15
12
9
6
3
00 40 80 120 160
VGE (V)
Qg (nC)
VCC = 520 V, IC = 50 A, IG = 12 mA
Figure 15. Switching energy vs collector current
GADG051220191256SLC
6
5
4
3
2
1
00 20 40 60 80 100
E (mJ)
IC (A)
Etot
Eoff
VCC = 400 V, RG = 4.7 Ω, VGE = 15 V, TJ=175 ℃
Eon
Figure 16. Switching energy vs temperature
GADG051220191257SLT
2.5
2.0
1.5
1.0
0.5
0.00 50 100 150
E (mJ)
Etot
Eoff
VCC = 400 V, VGE = 15 V, IC = 50 A, RG =4.7 Ω
Eon
TJ (°C)
Figure 17. Switching energy vs collector emitter voltage
GADG051220191258SLV
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5150 250 350 450
E (mJ)
VCE (V)
Etot
Eoff
Eon
VCC = 400 V, VGE = 15 V, IC = 50 A, TJ = 175 °C
RG = 4.7 Ω, VGE = 15 V, IC = 50 A, TJ = 175 °C
Figure 18. Switching energy vs gate resistance
GADG051220191258SLG
4
3
2
1
00 10 20 30 40
E (mJ)
RG (Ω)
Etot
Eoff
Eon
VCC = 400 V, VGE = 15 V, IC = 50 A, TJ = 175 °C
STGWA50H65DFB2Electrical characteristics (curves)
DS13185 - Rev 1 page 7/15
-
Figure 19. Switching times vs collector current
IGBT061220191050STC
10 2
10 1
10 0 0 20 40 60 80 100
t (ns)
IC (A)
tr
td(off)
tf
td(on)
Figure 20. Switching times vs gate resistance
GADG051220191259STR
10 2
10 1
10 0 0 10 20 30 40
t (ns)
RG (Ω)
tf
tr
td(off)
td(on)
Figure 21. Reverse recovery current vs diode currentslope
GADG051220191300RRC
55
50
45
40
35
30
25
200 500 1000 1500 2000 2500 3000
Irrm (A) VCC = 400 V, VGE = 15 V, IF = 50 A, TJ = 175 °C
di/dt(A/μs)
Figure 22. Reverse recovery time vs diode current slope
GADG051220191300RRT
240
220
200
1800 500 1000 1500 2000 2500 3000
trr (ns) VCC = 400 V, VGE = 15 V, IF = 50 A, TJ = 175 °C
di/dt(A/µs)
Figure 23. Reverse recovery charge vs diode currentslope
GADG051220191301RRQ
4.0
3.5
3.0
2.5
2.00 500 1000 1500 2000 2500 3000 di/dt(A/µs)
Qrr(μC) VCC = 400 V, VGE = 15 V, IF = 50 A, TJ = 175 °C
Figure 24. Reverse recovery energy vs diode currentslope
GADG051220191301RRE
1.0
0.8
0.6
0.4
0.20 500 1000 1500 2000 2500 3000
Err (mJ)
di/dt(A/µs)
VCC = 400 V, VGE = 15 V, IF = 50 A, TJ = 175 °C
STGWA50H65DFB2Electrical characteristics (curves)
DS13185 - Rev 1 page 8/15
-
Figure 25. Thermal impedance for IGBT
10 10 10 10 10 tp(s)-5 -4 -3-2 -1
10-2
10-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-cδ=tp/t
tp
t
Single pulse
δ=0.5
ZthTO2T_B
Figure 26. Thermal impedance for diode
STGWA50H65DFB2Electrical characteristics (curves)
DS13185 - Rev 1 page 9/15
-
3 Test circuits
Figure 27. Test circuit for inductive load switching
A AC
E
G
B
RG+
-
G
C 3.3µF1000
µF
L=100 µH
VCC
E
D.U.T
B
AM01504v1
Figure 28. Gate charge test circuit
GADG160420181048IG
RL
VCC
D.U.T.100 Ω IG = CONSTVi ≤ VGMAX
2200 μF
2.7 kΩ
PW 1 kΩ
47 kΩ
Figure 29. Switching waveform
AM01506v1
90%
10%
90%
10%
VG
VCE
IC td(on)ton
tr(Ion)
td(off)
toff
tf
tr(Voff)tcross
90%
10%
Figure 30. Diode reverse recovery waveform
t
GADG180720171418SA
10%
VRRM
dv/dt
di/dt
IRRM
IFtrr
ts tf
Qrr
IRRM
STGWA50H65DFB2Test circuits
DS13185 - Rev 1 page 10/15
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4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-247 long leads package information
Figure 31. TO-247 long leads package outline
8463846_2_F
STGWA50H65DFB2Package information
DS13185 - Rev 1 page 11/15
https://www.st.com/ecopackhttp://www.st.com
-
Table 7. TO-247 long leads package mechanical data
Dim.mm
Min. Typ. Max.
A 4.90 5.00 5.10
A1 2.31 2.41 2.51
A2 1.90 2.00 2.10
b 1.16 1.26
b2 3.25
b3 2.25
c 0.59 0.66
D 20.90 21.00 21.10
E 15.70 15.80 15.90
E2 4.90 5.00 5.10
E3 2.40 2.50 2.60
e 5.34 5.44 5.54
L 19.80 19.92 20.10
L1 4.30
P 3.50 3.60 3.70
Q 5.60 6.00
S 6.05 6.15 6.25
STGWA50H65DFB2TO-247 long leads package information
DS13185 - Rev 1 page 12/15
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Revision history
Table 8. Document revision history
Date Version Changes
09-Dec-2019 1 First release.
STGWA50H65DFB2
DS13185 - Rev 1 page 13/15
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Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.1 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
STGWA50H65DFB2Contents
DS13185 - Rev 1 page 14/15
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IMPORTANT NOTICE – PLEASE READ CAREFULLY
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
STGWA50H65DFB2
DS13185 - Rev 1 page 15/15
http://www.st.com/trademarks
FeaturesApplicationsDescription1 Electrical ratings2 Electrical characteristics2.1 Electrical characteristics (curves)
3 Test circuits4 Package information4.1 TO-247 long leads package information
Revision history