![Page 1: CANON ANELVA PVD Equipments...38% reduction 200nm 19.3g/cm3 Larger W Grain Size 1 4 2’ 3 2,& 3 PP ,& 3 PP Hard Disk Head PVO Hard Disk PVO DARM wire/TiN UBM/WLP](https://reader034.vdocuments.us/reader034/viewer/2022042304/5ecf6596c90f1e702844a9b4/html5/thumbnails/1.jpg)
![Page 2: CANON ANELVA PVD Equipments...38% reduction 200nm 19.3g/cm3 Larger W Grain Size 1 4 2’ 3 2,& 3 PP ,& 3 PP Hard Disk Head PVO Hard Disk PVO DARM wire/TiN UBM/WLP](https://reader034.vdocuments.us/reader034/viewer/2022042304/5ecf6596c90f1e702844a9b4/html5/thumbnails/2.jpg)
![Page 3: CANON ANELVA PVD Equipments...38% reduction 200nm 19.3g/cm3 Larger W Grain Size 1 4 2’ 3 2,& 3 PP ,& 3 PP Hard Disk Head PVO Hard Disk PVO DARM wire/TiN UBM/WLP](https://reader034.vdocuments.us/reader034/viewer/2022042304/5ecf6596c90f1e702844a9b4/html5/thumbnails/3.jpg)
CANON ANELVA PVD Equipments
Packaging PVD Equipment
Semiconductor PVD Equipment
Low Resistivity W metalwith VHF ionized PVD
— Deposition on Resin and Glass
— High Adhesive and High Reliable
— Board Cooling function
DRAM
PVD Cu seed process for WLP/PLP and Interposer
Resin
Low temp degas Ti/Cu metal deposition EL3400
Resin
Surface Treatment
Resin
Plasma Sputtering particles
Cluster PVD equipment for Semiconductor industry
Process ModulesMagnetron PVD (CAELA)
VHF ionized PVD (PCM)
Long Throw PVD
Collimate PVD
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ApplicationsW stacked DRAM conductive wire
Ti/TiN, Al/Ti, Co Silicide
TiN Hard Mask
UBM for Package
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CANON ANELVA CORPORATION
13.4
8.3
6
8
10
12
14
16
18
20
STD PVDMagnetron PVD
PCMVHF ionized PVD
Resi
stiv
ity [
cm]
38% reduction200nm
19.3g/cm3
Larger W Grain Size
1
4
2’
3
2