Download - Bolometer Fabrication
Bolometer Fabrication
P- Si Substrate
Ti ArmAl MirrorSiN Insulation Layer
PI 2737 Sacrificial Layer
SiGeAu Absorber Au Contact
Ashing of PI2737 in Oxygen Plasma
Completed Bolometer : SEM Picture
Bolometer: Resistivity & Temperature Coefficient of Resistance (TCR) Variation With
Temperature
40
50
60
70
80
90
-1.5
-1.4
-1.3
-1.2
-1.1
-1
260 270 280 290 300 310 320 330
Res
ista
nce
(K
)TC
R (%
/K)
Temperature (K)
Bolometer: Current voltage (I-V) Characteristics
-3
-2
-1
0
1
2
3
-3
-2
-1
0
1
2
3
-200 -150 -100 -50 0 50 100 150 200
In Air
In VacuumVol
tage
(V)
Current (A)
-0.4-0.3-0.2-0.1
00.10.20.30.4
-20 -15 -10 -5 0 5 10 15 20
Vol
tage
(V)
Current ( A)
Bolometer: Noise Analysis at Different Bias Currents
10-11
10-10
10-9
10-8
10-7
10-6
1 10 100 1000 104 105
0.4 A1 A2 AN
oise
Vol
tage
PSD
(V2 /H
z)
Frequency (Hz)
Bolometer: Noise Analysis of two bolometers and the corresponding Normalized Hoogie
Coefficient for 1/f-noise (αH/N) determined at 10 Hz frequency
DeviceNoise Voltage PSD @ 250 Hz For 1
μA bias current [V2/Hz]
αH/N
10C52 2.60×10-9 5.19×10-5
10C51 1.17×10-7 6.82×10-5
fN
RIS bHv
22
Where is noise voltage power spectral desity in V2/Hz
Ib is the bias current
R is the resistance of the device
N is the number of fluctuators
vS
This material is based in part by work supported by the National Science Foundation ECS-0322900