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Nitronex
Technologies & Costs
DOE WorkshopApril 2009
Presented by: Jeff Perkins
OSRAMAixtron OSRAMCREELumileds
45 rue Sainte Genevive, F-69006 Lyon, FranceTel : +33 472 83 01 80 - Fax : +33 472 83 01 83Web: http://www.yole.fr
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Yole Dveloppement
Lyon, France based market research and strategy consulting.
Our fields of competence include: MEMS, including microfluidics , ,
LED & Power Devices
Advanced Packaging - 3D IC - TSV Photovoltaic
We provide the following services: A free monthly newsletter (Micronews) with >23,000 subscribers A news and information web portal (www.i-micronews.com)
Market & Technology reports Custom consulting:
Market and technical evaluations and forecasts,
Process cost evaluation & reverse costing
Business strategy development 2009 2
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Our Activity is Global
40% of our business is
30% of our business is
in North America30% of our business is
in Asia
in EU Countries
Yole Inc.Allendale, NJ
Yole DveloppementLyon (HQ).
Global InformationInc. (Partner)
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Working Along The Value Chain
Yole consultants provide Market Analysis,Technolo Evaluation and Business Plan Assessment for clients
along the entire value chain.
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LED Status Summary The LED market was $5.1B in 2008 with a volume of over 50 billion units. LED applications are currently dominated by portable device backlighting
Mobile phones, PDA, GPS Higher brightness LEDs have begun to address other promising markets like
automotive, LCD backli ht and eneral li htin . Low-end LED products account for 83% High-Brightness LEDs 15% Emerging Ultra High-Brightness products 2%
Higher efficacy is needed for the General Lighting Market >150 lm/W has been proven with low-current LED operation (generally 20mA). Today high power LEDs have overall efficiency of 25%. To increase efficiency, 10 key technologies are in use or under investigation
With continued development of a variety of technologies, high power LEDs with150 lm/W converting more than 50% of input watts to light can be envisioned.
2009 5 Executive summary
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K t i d lLED Market
ey me r cs an p ayers
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LED Market Overview
Conventional LED High Brightness LED Ultra-high brightness white LED
Specifications
< 200 mW power 20 lm/W
1 to 3 lm generated
Typical epoxy housing
Up to 1 Watt power> 30 lm/W
5 to 30 lm generated
Specific packaging
up to 5 watt power> 50 lm/W
> 100 lm generated
Specific packaging
A licationmarkets
Cell phone keypad
Cell phone backlight
Signs
Screen backlight
Dashboard backlight
Large displays
Car head-lamps
High-End apps
General Illumination
(> 10,000 units). . . . .
2009 7 LED Market
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Facilities - CREE
Research Triangle Park (NC, USA)Cor orate Head uarters
manufacturing
Cotco (China)Production and packaging
,Technology center
2009 8 CREE Business Model
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Facilities - OSRAM
Headquarters and manufacturing main site
Penang (Malaysia):Second factory for surface-mounted LEDs, high-powerlaser diodes and organic LEDs
.
100-120M$From 2008, Penang site willalso be dedicated to LED dies
manufacturing.
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G l Ill i tiLED Market
enera um na on
2009
General Illumination Market
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-Worldwide Lighting Estimates
Extrapolating from OIDA 2000 estimates , . Worldwide = US x 4 = 120,000 T lm-hrs in 2008 Growth rate was estimated at 1.2 % per year Various sources ut the market for li htin roducts near 70B.
Solid State General Lighting market size estimates for 2012.
Range of possible LED market penetration: Base case: Low performance, low price, low market penetration rate ->more LEDs in a single lamp Technology breakthrough case: High performance, controlled price,
->
2009 12 General Illumination Market
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pNumber of lumens for various applications
time-to-market for mass-productionLight source# of lumen
General Lighting
Car HeadlampRPTVLCD backlight
100Pocket Projector
Car Rear lamp
Head-up display
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< 10
2007 2009< 2006 2008 > 2010LED technologies
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100%
Heat
Optical Power90%80% The increasing of the input power
produces more lumens, but lm/W ratiorops an so more ea s genera e
Thermal management is crucial for LED60% packaging
50%
40%
30%
20%
10%
0%
Average LED optical output power vs. heat
20 mA 100 mA 350 mA 1000 mA
2009 15 LED technologies
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-Overall LED Performance
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Epitaxy Front-End Back-End Packaging
Substrate LED epiwafer
LED dieDies-on-wafer
LED lamp
Internal QuantumEfficiency: int.
Electrical losses: elect.Extraction
Efficiency: extr.
pack.
Phosphor conversionLensesHousing
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total =int. x elect. x extr. x pack.
LED technologies
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LEDLED M n f rin
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LED technologies
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Main Manufacturing Steps
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SubstrateEpitaxy
Buffer layer
Epitaxy
Active layersAlNSiC InGaNLow T GaNSa hire
ep -wa erAlN/GaN sandwichSiliconBulk GaNComposite substrates
-Litho, etching, metallization
-level 0
Back-grinding Lateral LED structureDicing, Flip-chip LED dies-on-waferLED dies Vertical LED structureLaser Lift-Off: LLODie shaping
Binning, Pick-and-placePhosphor coating
Back-End
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eve
Sources: Yole Dveloppement Packaged LED LED lamp
LED technologiesPackaging, Housing
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Regular LED (white)
-1. Substrate: Wafer inspection
.
3. Litho 1: Mesa design4. Mesa etching: Dry etch
5. Ti + Ni contact deposition (PVD)
6. Litho 2: Ti + Ni etching
7. Dry etching Ti + Ni
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Regular LED (white)
-
.
2. Chip bonding to the cathode3. Wire bonding x2
4. Phosphor coating
5. Epoxy-based main lens molding
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Regular LED (white)
Costbreakdownfor100kx4"W earSubstrate Epitaxy
6.1%5.7%
OtherFE1.4%
OtherBE Phos hor32.0%.
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Flux
Various techniques to improve
Techniques to improve LED efficiency
Material Front-End Back-End PackagingLaser Lift-Off
New growth Photonic PhosphorsTemporary bonding
substrates CrystalsVf
nn ng ColourSurface Flip-Chip with
texturing reflecting back contacts
Transparent topcontacts
Dicing / Scribing
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The perfect white LED would include
Grown on bulk or free-standing GaN substrate
emove su s ra e no grown on u - a Vertical design with back side contact: smaller chip e s ze oes no excee x mm
Transparent top contact (ITO or ZnO)
Textured top surface
Thin active layer
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Time-to-market for LED substrates
D
UH
B-L
GaN/bulk GaN
GaN/B-GaN/pAlNGaN/Sapphire
B-
LED
GaN/SiC GaN/B-Si/pSiC
GaN/AlN
GaN/Sapphire
GaN/SiC
RegularLED
GaN/SiliconGaN/Glass GaN/Ge
GaN/B-Si/pSiC
2009 25 New substrates2006 2007 20102008 2009 2011 2012
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$
Substrate Cost Comparison(taken from power electronics example)
GaN/ SiC GaN/SiGaN / Sapphire
Front-end$300
Pack. & test: $120
Front-end
Pack. & test: $80
Front-end
Pack. & test: $80
Epitaxy$300
Epitaxyu
$1,000
4 Silicon: $25
$300
4 Sapphire: $150
Total: $1,720 Total: $705Total: $830
2009 26 Cost Breakdown
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Laser Lift Off Technique
The LLO technique is used to form thin GaN layers from Sapphiresubstrates to im rove both extraction and uantum efficienc .
Using UV laser, a 50nm of the GaN structure is thermall decomposed and delaminated from the substrate.
Main com anies that use the LLO technique: Osram
Lumileds
Unipress Korean companies
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Scribing & Dicing
LED one-step dicing is progressively replaced by a two-step methodcom risin GaN scribin and substrate cuttin .
The GaN scribing step must be carried out with high precision. To havegood performance, the diodes must have very straight and smooth edges.This ste can be done b Laser or Diamond techni ues.
The cutting of the substrate requires less precision and aims to separatethe diodes. Diamond saws as well as scribe (by diamond or laser) andbreak techni ues are normall used.
Scribing Dicing
2009 29 Sapphire Scribing
courtesy of Oxford Lasers
0.4mm thickSapphire Diced byUVCVL of 255nm
courtesy of Oxford Lasers
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Binning Colour FluxVf
Binning refers to the classification of production yields.
Each part is binned for 3 parameters:
Color: Dominant/Peak Wavelength or Correlated Color
TemperatureVf: Forward Voltage
=
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Binning Colour FluxVf
Binning operations result from a trade-off with theep axy process me.
Binning operations add substantial cost in the LEDmanu ac ur ng process.
Too severe binning criteria on the 3 parameters lead.
LED design has to be done to have as few bins as.
Vf is the easiest parameter to eliminate, so that.
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Conclusions
Market LED backli htin a lications are a rice cuttin ame
Automotive and LCD TV backlight growing
General lighting: breakthroughs needed 150 lm/W at high current is threshold to penetrate this market segment
CREE, Nichia, Osram, Philips, and Toyoda Gosei Patents related to hos hor down-conversion solidif ositions
LED Performance, Manufacturing Technology & Materials High power LEDs generate only 25% of light versus 75% of heat or s e ng one a
everyeve
oe manu ac ur ng o s o mprove
efficiency and cost trade-offs occur at each level. New materials under development: 4 main trends
Large diameter: -> 6 (GaN/silicon, GaN/Glass, composite substrates) Monolithic white LED phosphor-free (Cermet: ZnO, CRHEA, Nanovation) AlN native substrates for UV-LED manufacturing
Single GaN substrate 2009 32 Conclusions