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Distributed Z-Source Network Converter for

Power Conditioning and Utility Interface of Renewable Energy Sources 

Abstract:

This project presents a novel DC-DC converter incorporating

distributed (or transmission line) Z-source network for buck (step-down) and

 boost (step-up) operation of DC-DC converter. Recently, a lot of effort has

 been made to utilize distributed network in power electronics circuits. In this

 project, the distributed Z-source network composed of an array of inductor 

and capacitor is coupled between power source and main switching devices.

The great feature about the distributed Z-source network is that unlike the

traditional V-source or I-source, it can be open and short-circuited.

Therefore, the desired buck and boost function can be achieved. A dc-dc

converter using proposed concept was built and tested. Its performances are

verified with experimental results.

In grid connected power conditioners, usually both stepping-up the

PV array voltage, and stepping-down the dc bus voltage for injection of a

sinusoidal current to the grid is required. In this project the design procedure

of Z-source converter as a single phase PV grid connected converter-inverter 

is presented.

The converter has less than the conventional two stage power conditioner,

which leads to reduction of cost.

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An optimum modulation pattern for the switches is proposed, and the low

frequency ripple of the converter is modeled. The design of the converter is

verified by simulation and implementation.

The voltage-fed FB converter shown in Fig. has the following

limitations.

• The output voltage of converter is always lower than input voltage. In other 

words, the input voltage has to be greater than output voltage.

•The upper and lower devices of each phase leg cannot be gated on

simultaneously either by purpose or by EMI noise. Otherwise, a shoot-

through would occur and destroy the devices. The shoot-through problem by

Electromagnetic interference (EMI) noise’s misgating-on is a major killer to

the converter’s reliability.

• Therefore, a voltage snubber (or clamp) circuit is required to limit voltage

overshoot in rectifier diodes. The added circuitry may decrease converter 

efficiency and system reliability.PWM GENERATOR CIRCUIT

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PWM DRIVER CIRCUIT FOR MOSFET SWITCHES

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High and low side driver IC IR2110

Features

• Floating channel designed for bootstrap operation

• Fully operational to +500V or +600V

• Tolerant to negative transient voltage

• DV/DT immune

• Gate drive supply range from 10 to 20V

• Under voltage lockout for both channels

• 3.3V logic compatible

• Separate logic supply range from 3.3V to 20V

• Logic and power ground ±5V offset

• CMOS Schmitt-triggered inputs with pull-down

    • Cycle by cycle edge-triggered shutdown logic

    • Matched propagation delay for both channels

    • Outputs in phase with inputs

Description

The IR2110/IR2113 is high voltage, high-speed power MOSFET and IGBTdrivers with independent high and low side referenced output channels. Proprietary HVIC

and latch immune CMOS technologies enable rugged zed monolithic construction. Logic

inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The

output driver’s feature a high pulse current buffer stage designed for minimum driver 

cross-conduction. Propagation delays are matched to simplify use in high frequency

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applications. The floating channel can be used to drive an N-channel power MOSFET or 

IGBT in the high side configuration, which operates up to 500 or 600 volts.

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Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device

may occur. All voltage parameters are absolute voltages referenced to COM. The thermal

resistance and power dissipation ratings are measured under board mounted and still air 

conditions.

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Recommended Operating Conditions

For proper operation the device should be used within the recommendedconditions. The VS and VSS offset ratings are tested with all supplies biased at 15V

differential.

CA3140A High performance industrial operational amplifier

4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar output. The

CA3140A and CA3140 are integrated circuit operational amplifiers that combine theadvantages of high voltage PMOS transistors with high voltage bipolar transistors on a

single monolithic chip.

The CA3140A and CA3140 Bi MOS operational amplifiers feature gate protected

MOSFET (PMOS) transistors in the input circuit to provide very high input impedance,

very low input current and high-speed performance. The CA3140A and CA3140 operate

at supply voltage from 4V to 36V (either single or dual power supply). These operational

amplifiers are internally phase compensated to achieve stable operation in unity gainfollower operation, and additionally, have access terminal for a supplementary external

capacitor if additional frequency roll-off is desired. Terminals are also provided for use in

applications requiring input /offset voltage null. The use of PMOS field effect transistors

in the input stage results in common mode input voltage capability down to 0.5V below

the negative supply terminal, an important attribute for single supply applications. The

output stage uses bipolar transistors and includes built-in protection against damage from

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load terminal short-circuiting to either supply rail or to ground. The CA3140A and

CA3140 are intended for operation at supply voltages up to 36V (±18V).

Features

MOSFET Input Stage

Very High Input Impedance

Very Low Input Current

Wide Common Mode Input Voltage Range (VlCR) - Can be

Swing 0.5V below Negative Supply Voltage Rail

Output Swing Complements Input Common Mode Range Directly Replaces Industry Type 741 in Most Applications

Applications

Ground-Referenced Single Supply Amplifiers in

Automobile and Portable Instrumentation

Sample and Hold Amplifiers

Long Duration Timers/ Multivibrators

Photocurrent Instrumentation

Peak Detectors

Active Filters

Comparators

Interface in 5V TTL Systems and Other Low

Supply Voltage Systems

All Standard Operational Amplifier Applications

Function Generators

Tone Controls

Power Supplies

Portable Instruments

Intrusion Alarm Systems

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Pin details of CA 3140E

Device specifications CA3140E 

Absolute Maximum Ratings

DC Supply Voltage (Between V+ and V- Terminals) . . . . . . . . . 36V

Differential Mode Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 8V

DC Input Voltage . . . . . . . . . . . . . . . . . . . . . . (V+ +8V) To (V- -0.5V)

Input Terminal Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mA

Output Short Circuit Duration   . . . . . . . . . . . . . . Indefinite

Operating Conditions

Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC

Temperature (Plastic Package) . . . . . . . 150oC

Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC

LF347 Quad Operational Amplifier (JFET)

Features

• Low input bias current

• High input impedance

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• Wide gain bandwidth: 4 MHz

• High slew rate: 13 V/S

Description

The LF347 is a high-speed quad JFET input operational amplifier. This feature

high input impedance, wide bandwidth, high slew rate, and low input offset voltage and

 bias current. LF347 may be used in circuits requiring high input impedance. High slew

rate and wide bandwidth, low input bias current.

Absolute maximum rating

GENERAL PURPOSE J-FET QUAD OPERATIONAL AMPLIFIERS

DESCRIPTION

The TL084, TL084A and TL084B are high speed J–FET input quad operational amplifiers

incorporating well matched, high voltage J–FET and bipolar transistors in a monolithic integrated

circuit. The devices feature high slew rates, low input bias and offset currents, and low offset

voltage temperature coefficient.

PIN CONNECTIONS 

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1.All voltage values, except differential voltage, are with respect to the zero reference

level (ground) of the supply voltages where the zero reference level is the midpoint

 between VCC + and VCC -

2. The magnitude of the input voltage must never exceed the magnitude of the supply

voltage or 15 volts, whichever is less. ±15 V

3. Differential voltages are the non-inverting input terminal with respect to the inverting

input terminal.

4. The output may be shorted to ground or to either supply. Temperature and/or supply

voltages must be limited to ensure that the dissipation rating is not exceeded

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MOSFET

N CHANNEL 500V/ 14 Amps MOSFET

Specifications

TYPICAL RDS (on) = 0.33 W

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERYLOW INTRINSIC CAPACITANCES

GATECHARGE MINIMIZED

DESCRIPTION

This power MOSFET is designed using the Company’s consolidated strip layout-based

MESH OVERLAY process. This technology matches and improves the performances

compared with standard parts from various sources.

APPLICATIONS

HIGH CURRENT SWITCHING

UNINTERRUPTIBLE POWER SUPPLY (UPS)

DC/DC COVERTERS FOR TELECOM,

INDUSTRIAL AND LIGHTING EQUIPMENT.

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ABSOLUTE MAXIMUM RATINGS