dirac materials qdm mar 2015 short - los alamos national ... · the dirac equation p. dirac: “the...
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Dirac MaterialsA.V. Balatsky
•New class of materials
•What is the definition of Dirac Materials?
•Similarities and differences between d‐wavesuperconductors, Graphene and Topological Insulators: All are Dirac materials with some common features •Imaging of k and r space
•Local electronics and spins in graphene and TI
•Gap or no gap in TI?
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J. X. Zhu, I. Martin, M. Salkola, T. Das, – Los AlamosD. Abergel, A. Black‐Schaffer NorditaH. Dahal ‐ BCT. Wehling, A. Lichtenstein, K. Scharnberg,R. Wiesendanger – U HamburgM. Katsnelson – U NiemegenJ. Fransson‐ UppsalaD.Arovas‐ UCSDZ. Huang – UCSD, Los Alamos
Experiment: J.C. Davis groupY.Zhao, V. Brar, M. Crommie ‐IETSL. Mattos, H. Manoharan –Kondo graphene
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The Dirac EquationP. Dirac: “The quantum theory of the electron” (1928)
Describing electrons, protons, quarks,neutrinos...
with 4x4 Dirac matrices
Nobel Price 1933
(from
nob
elprize
.org)
... with peculiar physical consequences:
• Spin 1/2 and Landé g=2
• Antiparticles
• Klein paradox and Zitterbewegung
• Spin orbit coupling
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Dirac materials
• Materials whose low energy electronic properties are a direct consequence of Dirac spectrum E = vk: specific heat ~T^d, penetration depth~T, optical conductivity~T^n
• How do we “design” Dirac Materials?
• Can be a collective state: 3He superfluid, heavy fermion, organic, high Tc superconductors, density wave states
• Band structure effect – graphene, Topological states, cold atom DM, artificial DM
• Not a Dirac equation (1928)
T. Wehling, A Black‐Schaffer and A. V. Balatsky, Dirac Materials, Adv Phys, p1 v 90 (2014)
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Dirac materials vs metals
Metals
FS
E = v(k‐k_F)
Dirac materials(3He included)
E = vk, k_F = 0
empty
occupied
Defining feature:Dimensionality of zero energy states in one less( at least)In the Dirac materials. Fewer excitations at low T.Better control of response and less dissipation. Important for future energy and device applications.
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Why Dirac materials: path to control of electronic states
Tunability and control
1 With B, E fields 2 with doping and functionalization
3 with quantum size control: films, ribbons
Fe or Sn
Bi2Se3
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R‐space vs K‐space probesof Dirac Materials
Local probes (r space)STM, spin imaging with Kerr
Extended probes (k space)Magnetotrasport, thermal
conductivity
) Y. Xia et al.,Nature Phys. 5, 398 (2009)
Theory Guidance for search of new states
Ab initio, functionalization, How protected are topological states
T. Hanaguri, A. Kapitulink, H. ManoharanV. Madhavan, A. Yazdani S.C. Zhang et al RMP, Nov (2011)
A.C. Neto et al, RMP (2010)A.V. Balatsky et al, v 78, 373 (2006)
timetime
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Universal response to defects. Why Impurities?
• Why local signatures and impurities?– Scientific interests: applications rely heavily on functionalization
– Observation possible by Scanning Tunneling Spectroscopy (STS)
– Engineered electronic states due to imp bands– Microchips at one atom at time approach ~ 100 impurity atoms/transistormean lifetime pictures will break down.
– Suggested Quantum Computation operations involve deliberate local perturbations
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Local impurity resonances in d‐wave superconductors
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UNUNE
FF 8ln1
21
0
9 9.659 093
2 .0611 54109Fi j
j
LDOS Image at for impurity-state
Rev. Mod Phys, 78, p 373, (2006)
d‐wave Superconductor:Impurity Resonances
-
On-site potential On-site LDOSU>0
E
Crossshaped state
-100 -50 0 50 1000.0
0.5
1.0
1.5
2.0
2.5 typ ica l reg ion on center o f Zn a tom
Diff
eren
tial C
ondu
ctan
ce (n
S)
S am ple B ias (m V)
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Impurity states in ANY Dirac point materials
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Impurity states in ANY Dirac point materials
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Impurity states in ANY Dirac point materials
1/U_1
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Impurity states in ANY Dirac point materials
1/U_1
1/U_2
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Impurity states in ANY Dirac point materials
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Local impurity resonances in Dirac Materials: Graphene
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Real space signatures I
r‐dependent LDOS at imp. resonance
Eimp=0.1eV
T. Wehling et. al., PRB 75, 125425 (2007), Peres, A.C Neto, Guinea, Falko
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M.M. Udega etal, PRL104, 096804 (2010)
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Universal response to local defects
-100 -50 0 50 1000.0
0.5
1.0
1.5
2.0
2.5 typ ica l reg ion on center o f Zn a tom
Diff
eren
tial C
ondu
ctan
ce (n
S)
S am ple B ias (m V)
Graphene
D‐Wave SC
Hypothesis: ANY Dirac material has similar resonances
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Local impurity resonances in Topological Insulators, probe of
stability
Hanaguri etal, PRB 2010,cond mat 1003.0100
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Impurity resonances in Dirac Materials: Topological Insulators,
probe of suppressed back scattering
Hanaguri etal, PRB82, 081305(2010);Cheng, et al, PRL 105, 081305(2010).Gomes et al, arXiv:0909.0921
(2009)
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Resonance as seen in STMZ. Alpichev et al, PRL 108,206102,(2012)
Sessi et al. NATURE COMM | DOI: 10.1038/ncomms6349, (2014)
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ARPES on magnetically doped TI and on films
z
zz
SkE
SkH22
Fully gapped spectrum
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At B=0 at Dirac point now there should Be a true gap. The data show finite LDOS.
Gap or no gap for Cr doped sample.
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Gap in FM ordered TI seen in STM
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Robust conventional IQHE has mobility gaps, not real gaps
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Gas vs Mobility gap in (A) QHE
Conventional IQHEAnomalous QHE thatdoes not require a full gap either
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Z. Alpichev et al, PRL 108,206102,(2012)
No gap at zero field
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Competing trends due to magnetic scattering
Low energy resonance • Every impurity (magnetic
and nonmagnetic) will produce imp resonances inside Dirac cone = backscattering
Magnetic scattering Gap in Dirac spectrum • Dirac fermion acquire a
mass due to spin
z
zz
SkE
SkH22
+ =N(E)
Science 329, 659 (2010);Y. L. Chen, et al.
True answer is combination of both effectsBiswas, AVB PR B 81 , p233405 (2010), A Black Schaffer et at, arXiv:1502.06403
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Filling of Magnetic Impurity Induced Gap in Topological Insulators by Potential ScatteringarXiv:1502.06403 , A. M. Black-Schaffer, A. V. Balatsky, J. Fransson
Science 329, 659 (2010);Y. L. Chen, et al.
E
E_f
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Artificial Dirac MaterialsNanoscale functionalization in Graphene physics
Nanoassembledartificialgraphene
Manoharan group, Nature 483, p 306, 2012doi:10.1038/nature10941
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Universal response of Dirac materials to local perturbations
-100 -50 0 50 1000.0
0.5
1.0
1.5
2.0
2.5 typ ica l reg ion on center o f Zn a tom
Diff
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tial C
ondu
ctan
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S)
S am ple B ias (m V)
Graphene
D‐Wave SC
1.2
1.0
0.8
0.6
0.4
0.2
0.0
dI/dV
(arb.
unit)
-600 -400 -200 0Sample bias (mV)
TI
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Conclusion•Dirac materials is a class
•Convergence in multiple materials ‐> class.
•Defects as test of stability of Topological states
•The future is even more exciting with designed materials coming.
•New imaging to capture exciting new phenomena in quantum materials