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Digital Integrated Circuits © Prentice Hall 1995 Introduction Introduction VLSI DESIGN DOMAIN Practical application of VLSI Design?

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Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

VLSI DESIGN DOMAIN

Practical application of VLSI Design?

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

INTRODUCTION

Systems based on Magnetically controlled switches

Vacuum Tubes» Analog» Digital

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

HISTORICAL PERSPECTIVE

1930 - O.Heil and Lilienfeld – FET 1947 – Bardeen, Brattain and Shockley, AT & T Bell

Labs, - BJT 1958 – Jack Kilby, Texas Instruments, Hybrid IC Jack Kilby was awarded the year 2000 Nobel prize

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

LEVEL OF INTEGRATION

Level of Number Typical Integration of Gates Applications

SSI 1-10 Basic Gates

MSI 10-100 Counters,Decoder, Encoder

LSI 100-1000 Memories, ADC/DAC

VLSI 1000-10,000 MPU’s

ULSI 10,000-100,000 DSP, DEC ALPHA

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

Evolution in Complexity

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

Evolution in Speed/Performance

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

TRANSISTOR FEATURE SIZE

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

Silicon in 2010

Die Area: 2.5x2.5 cmVoltage: 0.6 VTechnology: 0.07 m

Density Access Time(Gbits/cm2) (ns)

DRAM 8.5 10DRAM (Logic) 2.5 10SRAM (Cache) 0.3 1.5

Density Max. Ave. Power Clock Rate(Mgates/cm2) (W/cm2) (GHz)

Custom 25 54 3Std. Cell 10 27 1.5

Gate Array 5 18 1Single-Mask GA 2.5 12.5 0.7

FPGA 0.4 4.5 0.25

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

TERMINOLOGY

Manufacturing Lead Time(Turnaround Time) – The time it takes to make an IC excluding the design time.

Integrated Circuit – Combination of circuit elements inseparably associated on or within a substrate.

Substrate – Supporting material. Monolithic IC – An IC whose elements are formed on or

within a substrate. Hybrid IC – Consists of a combination of two or more

ICs or an IC with some discrete components.

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

TERMINOLOGY

Wafer(Slice) – Contains many ICs. Circular in nature. Diameter – 4, 5, or 6 inches.

Chip(die or bar) – Repeated ICs on a wafer. Test Plug(Process Control Bar Process Control

Monitor) - Special Chip Used to monitor the process parameters of the technology.Used to derive the timing models-Wafer can be discarded.

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

Defect Density - Lethal defects per cm2

Yield - Yield = No. of Good Chips on a Wafer/Total Number of Chips

Utilization Factor - Utilization Factor = Used Chip Area/Total Chip Area

SOC- System On Chip

TERMINOLOGY

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

PERIODIC SYSTEM

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

SEMICONDUCTOR PHYSICS

Intrinsic Si Ideal crystal structure Valance 4 Almost no free carriers Almost no conduction

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

SEMICONDUCTOR PHYSICS

Doping with valance 5 atoms (Phosphor, Arsenic) introduces “Loose electrons”

Electron donor Conductivity depends on

doping level

Digital Integrated Circuits © Prentice Hall 1995IntroductionIntroduction

SEMICONDUCTOR PHYSICS

Doping with valance 3 atoms (Boron) introduces “Loose Holes”

Electron acceptors Hole conductivity

lower than electron conductivity