determination of rate of change of current inside the 3 ghz silicon chip for any given noise at...
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Bidyut K. Bhattacharyya, Nivedita Laskar, Suman Debnath, and Sikha Bhattacharya, "Determination of Rate of Change of Current Inside the 3 Ghz Silicon Chip for Any Given Noise at 100amp Maximum Saturation Current," International Journal of Electrical Energy, Vol.1, No.2, pp. 67-71, June 2013. doi: 10.12720/ijoee.1.2.67-71 link to download the paper http://www.ijoee.org//index.php?m=content&c=index&a=show&catid=32&id=30TRANSCRIPT
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Bidyut K. Bhattacharyya, Nivedita Laskar, Suman Debnath, and Sikha Bhattacharya, "Determination of Rate of Change of Current Inside the 3 Ghz Silicon Chip for Any Given Noise at 100amp Maximum Saturation Current," International Journal of Electrical Energy, Vol.1, No.2, pp. 67-71, June 2013. doi: 10.12720/ijoee.1.2.67-71
• http://www.ijoee.org//index.php?m=content&c=index&a=show&catid=32&id=30