detector testing facility a t rbi (ibic ( ion beam induced charge ) experiment)
DESCRIPTION
Veljko Grilj Ruđer Bošković Institute, Zagreb, Croatia. Detector testing facility a t RBI (IBIC ( Ion Beam Induced Charge ) experiment). Silicon Detector Workshop Split, Croatia, 8-10 October 2012. 1. Accelerators. 1.0 MV HVE Tandetron accelerator. - PowerPoint PPT PresentationTRANSCRIPT
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DETECTOR TESTING FACILITY AT RBI(IBIC (Ion Beam Induced Charge) EXPERIMENT)
Veljko Grilj
Ruđer Bošković Institute, Zagreb, Croatia
Silicon Detector WorkshopSplit, Croatia, 8-10 October 2012
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1. ACCELERATORS 1.0 MV HVE
Tandetron accelerator
6.0 MV EN Tandem Van de Graaff accelerator
IAEA beam line
TOF ERDA
PIXE/RBS
Dual-beam
irradiation
Ion microprobe
Nuclear reactions
In-air PIXE
PIXE crystal spectromet
er
Det.test
.IBIC
12
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1.1. New detector testing beam line
1. Beam deflector and/or scanner
2. Pre-chamber with beam degrader/diffuser
3. Final chamber with beam in air capability
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1.2. Nuclear microprobe
XY
protonbeam
scangenerator
XY
quadrupole doubletfocusing lens
sampleobject slits
IBIC signal
IBIC - chargecollection efficiency
images
IONS- p, , Li, C, O,..
RANGE - 2 to 200 m
ION RATE- currents 0 - 106 p/s
ION POSITION- focusing and scanning
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500 10001E-6
1E-5
1E-4
1E-3
0,01
0,1
1
10
100
1000
10000
100000
Num
ber o
f cha
rge
pairs
(ion
*nm
)-1
Depth (nm)
protons
CSi Cu I
Eions = 1 MeV/amuMIPs
Silicon I 127 Si 28 C 12 He 4 H 1Range(µm)E=1 MeV
0.37 1.13 1.6 3.5 16.3
Range (µm)E=10 MeV
3.7 4.8 9.5 69.7 709
proton
He12C
28Si127I
1.3. Available ion beams
Accel. voltages 0.1 to 6.0 MVNegative Ion sources:- Duoplasmatron- RF He- Sputtering
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2. ION BEAM INDUCED CHARGE - theory
V
Q
V
Vout
Ouput signal Vout
Deposited energy
Principles of radiation detection techniques
Vout = F (deposited energy, free carrier transport)
Nuclear spectroscopy Well known
Free charge genetration and
transport
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2. ION BEAM INDUCED CHARGE - theory
V
Q
V
Vout
Ouput signal Vout
Deposited energy
Principles of IBIC
Vout = F (deposited energy, free carrier transport)
Free charge genetration and
transport
Well known Material characterization
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2. ION BEAM INDUCED CHARGE - theory
2
2
2
220
20
24
1ln2ln4cv
cv
IvmNZ
vmze
dxdE
Bethe formula:
a) Energy deposition by ions
Principles of IBICb) Creation of e-h pairs
6/ 10
eVMeVE
Neh
dephe
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2. ION BEAM INDUCED CHARGE - theory
c) Free charge carrier transport → charge induced at electodes
Principles of IBIC
.
))((
constVii
jVtrEvqi
Gunn’s theorem:
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
V
Q
V
Vout
d
T=0
v dvq)t(I
year 1964
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2. ION BEAM INDUCED CHARGE - theory
c) Free charge carrier transport → charge induced at electodes
Principles of IBIC
.
))((
constVii
jVtrEvqi
Gunn’s theorem:
V
Q
V
Vout
d
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
T=1
dvq)t(I
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2. ION BEAM INDUCED CHARGE - theory
c) Free charge carrier transport → charge induced at electodes
Principles of IBIC
.
))((
constVii
jVtrEvqi
Gunn’s theorem:
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
V
Q
V
Vout
d
T=2
dvq)t(I
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2. ION BEAM INDUCED CHARGE - theory
c) Free charge carrier transport → charge induced at electodes
Principles of IBIC
.
))((
constVii
jVtrEvqi
Gunn’s theorem:
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
V
Q
V
Vout
d
T=3
dvq)t(I
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2. ION BEAM INDUCED CHARGE - theory
c) Free charge carrier transport → charge induced at electodes
Principles of IBIC
.
))((
constVii
jVtrEvqi
Gunn’s theorem:
V
Q
V
Vout
d
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
T=4
dvq)t(I
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2. ION BEAM INDUCED CHARGE - theory
c) Free charge carrier transport → charge induced at electodes
Principles of IBIC
.
))((
constVii
jVtrEvqi
Gunn’s theorem:
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
V
Q
V
Vout
d
T=5
dvq)t(I
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2. ION BEAM INDUCED CHARGE - theory
c) Free charge carrier transport → charge induced at electodes
Principles of IBIC
.
))((
constVii
jVtrEvqi
Gunn’s theorem:
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
V
Q
V
Vout
d
T=6
dvq)t(I
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2. ION BEAM INDUCED CHARGE - theory
c) Free charge carrier transport → charge induced at electodes
Principles of IBIC
.
))((
constVii
jVtrEvqi
Gunn’s theorem:
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
V
Q
V
Vout
d
T=7
dvq)t(I
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2. ION BEAM INDUCED CHARGE - theory
c) Free charge carrier transport → charge induced at electodes
Principles of IBIC
.
))((
constVii
jVtrEvqi
Gunn’s theorem:
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
V
Q
V
Vout
d
T=8
dvq)t(I
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2. ION BEAM INDUCED CHARGE - theory
c) Free charge carrier transport → charge induced at electodes
Principles of IBIC
.
))((
constVii
jVtrEvqi
Gunn’s theorem:
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
V
Q
V
Vout
d
T=9
dvq)t(I
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2. ION BEAM INDUCED CHARGE - theory
c) Free charge carrier transport → charge induced at electodes
Principles of IBIC
.
))((
constVii
jVtrEvqi
Gunn’s theorem:
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
V
Q
V
Vout
d
T=10
dvq)t(I
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2. ION BEAM INDUCED CHARGE - theory
c) Free charge carrier transport → charge induced at electodes
Principles of IBIC
.
))((
constVii
jVtrEvqi
Gunn’s theorem:
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
V
Q
V
Vout
d
T=11
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2. ION BEAM INDUCED CHARGE - theory
Impact of defects on charge carriers mobility:Principles of IBIC
-2 0 2 4 6 8 10 12 14 16
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
-2 0 2 4 6 8 10 12 14
0.000
0.025
0.050
0.075
0.0
0.2
0.4
0.6
0.8
1.0
I
Time
Q
dvqI
qQtot
qQtot
t
dvqI exp
created
induced
QQCCE - physical opservable:
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2. ION BEAM INDUCED CHARGE - theory
Principles of IBIC
startifinali
induced VVqQ
- direct implication from Gunn’s theorem:
.
))((
constVii
jVtrEvqi
- consequences:
electronsholes
ion beam
CCE 100%
a)
b)- V0 - V0
-V 0
he
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2. ION BEAM INDUCED CHARGE - theory
Advantages of using focused ions:- spatial resolution- wide spread of ion ranges
Principles of IBIC
20 m
20 m
Electrons10 keV
Electrons40 keV2 MeV H+ in Si 3 MeV H+ in Si
4 MeV H+ in Si
2 m
4 m
6 m
47 m 90 m 147 m
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2. ION BEAM INDUCED CHARGE
PIN diode
Samples
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2. ION BEAM INDUCED CHARGE
CVDdiamond
CdInGaSesolar cell
Si DSSD(16x16 strips)
Ion beam
Samples
Laura Grassi, Wednesday,
16:00h
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2. ION BEAM INDUCED CHARGE
100 m
Geometries
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3. IBIC EXAMPLES
- by proper selection of ion type and energy, CCE (charge collection efficiency) at different sample depths can be imaged.
4.5 MeV Lirange 6μm
3 MeV protonsrange 90 μm
Si Schotky diode
proton
He12C
28Si127I
surface
bulk
Frontal IBIC
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3. IBIC EXAMPLES
4.5 MeV Li7 ions (range in Si 8.5 m)
7.875 O16 ions(range in Si 4.5 m)
8.25.4
0
5.4
0
m
ionsLi
m
ionsO
dxdxdE
dxdxdE
Li image - O image / 2.8IBIC between 4.5 and 8.5 m
Frontal IBIC – depth profiling
Si Schotky diode
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3. IBIC EXAMPLES
Frontal IBIC – drift & diffusion
d
W p
W
neutraldepletion dxLWx
dxdEdx
dxdEQQQ exp
0
drift diffusion
E ≠ 0
E = 0
minority carrier diffusion length
4H-SiC diode
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3. IBIC EXAMPLES
d
W p
W
neutraldepletion dxLWx
dxdEdx
dxdEQQQ exp
0
drift diffusion
E ≠ 0
E = 0
Frontal IBIC – drift & diffusion
4H-SiC diode
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3. IBIC EXAMPLES
d
W p
W
neutraldepletion dxLWx
dxdEdx
dxdEQQQ exp
0
drift diffusion
E ≠ 0
E = 0
Frontal IBIC – drift & diffusion
4H-SiC diode
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3. IBIC EXAMPLES
d
W p
W
neutraldepletion dxLWx
dxdEdx
dxdEQQQ exp
0
drift diffusion
E ≠ 0
- direct measurement of diffusion length
Lp = (9.0±0.3) μm
Frontal IBIC – drift & diffusion
4H-SiC diode
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3. IBIC EXAMPLES
Frontal IBIC – μτ mapping
E
ddECCE
eh
eh
/
/ exp1
- from Gunn’s theorem with assumptions of full depletion, constant electric field and generation near one electrode:
Vcmave /101 23,
Vcmavh /104 25,
electrons holes
Hecht equation
CdZnTe- sample thickness > 2 mm
- IBIC with 2 MeV p+, range < 30 μm
M. Veale et al., IEEE TNS, 2008
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Si power diode
E = 0
pn junction
E < 0
ion beam
0 zd z
CCE (z<zd) ≈ 1CCE (z>zd) = exp(-(z-zd)/Lp,n)hole or electron
diffusion length
3. IBIC EXAMPLES
Lateral IBIC – drift and diffusion
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3 MeV proton beam
X-Y scanning
Cooling-heating
Bias Preamplifier Amplifier
ADC
Digital oscilloscope
DSO
TRIBIC
DAQIBIC MAPS
CdZnTeAu-contacts
3. IBIC EXAMPLES
Temperature dependent lateral IBIC
CdZnTe
- temperature range 166-329 K
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()e=(1.4)*10-3 cm2/V()h=1*10-5 cm2/V
IBIC line scan (anode to cathode)for CCE=100%
3. IBIC EXAMPLES
Temperature dependent lateral IBIC
CdZnTe
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3. IBIC EXAMPLES
Radiation hardness tests
- For 100% ion impact detection efficiency, IBIC
can be used to monitor irradiation fluence
- Irradiation of arbitrary shapes - On-line monitoring of CCE degradation
Ion beam induced damage:
50 Li7 m-2 = 5×109 cm-2
6 Li7 m-2 = 6×108 cm-2
(4 events per pixel)
IBIC on-line monitoring:
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Irradiation pattern (3 x3 quadrants, 50 x 50 pixels, 100 x 100 m2 each, 20 m gaps, tirrad = 5 min. – 3 h )
3. IBIC EXAMPLES
Radiation hardness tests
- damage done with He, Li, O & Cl ions of similar range
Si diode
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3. IBIC EXAMPLES
Radiation hardness tests Modeling of CCE:- doping profiles & el. field (CV)- drift velocity profiles (el. field)- hole contribution negligible- vacancy profile (SRIM)- predominantly divacancies (DLTS)- dE/dx from (SRIM)- electron lifetime:
k = 0.88 *10-15
k = 0.18 !!18% of radiation induced defects leads to stable
divacancies !
heheKCCE ,*
,*1
hehek ,, effective fluence
Si diode
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4. ION INDUCED DLTS
Question: how to calculate the energy levels of produced traps?
Answer: DLTS, but what if.....a) number of traps is very very large? b) I want good spatial resolution? c) my sample is diamod?
Radiation produces lattice defects el. active traps, CCE<100%
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4. ION INDUCED DLTS
Question: how to calculate the energy levels of produced traps?
Answer: DLTS, but what if.....a) number of traps is very very large? b) I want good spatial resolution? c) my sample is diamod?Ion Induced
DLTSSteps:- IBIC with MeV ions, charge carriers will fill traps - record cumulative collected charge in time using charge sensitive preamp and digital scope at different temperatures- choose rate windows like in conventional DLTS- plot Q(t2)-Q(t1) vs. T- make Arrhenius analysis and get activation energy of the defect
Radiation produces lattice defects el. active traps, CCE<100%
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4. ION INDUCED DLTS 6H-SiC diode
- irradiation with 1 MeV electrons, 215101 cm el. active traps, CCE<100%- IBIC with 5.486 MeV alphas
cumulative collected charge 250K<T<320 K
Q(t2)-Q(t1) vs. T
Estimated activation energy:IIDLTS DLTS
0.50±0.05 eV 0.53±0.07 eV
N. Iwamoto et al., IEEE TNS, 2011
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5. TIME RESOLVED IBIC - TRIBIC
C. Canali, E. Gatti, S.F. Koslov, P.F. Manfredi, C. Manfredotti, F. Nava, A. QuiriniNucl. Instr. Meth. 160 (1979) 73-77
t
dvqI exp
ns15
(transient current technique, TCT)- use of current sensitive amplifier instead of charge
sensitive- high frequency oscilloscope, - novel technique ???
400 μm thick natural diamond
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5. TIME RESOLVED IBIC - TRIBIC
- 2 GHz, 40 dB, 200ps rise time amplifier (CIVIDEC)- broad-band 3GHz scope (LeCroy)
TCT on scCVD diamond at low temperatures H. Jansen (CERN), CARAT
Workshop, GSI, 2011
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Lower fields are required to reach saturation velocity at low tempertures
5. TIME RESOLVED IBIC - TRIBIC Saturation velocity
H. Jansen (CERN), CARAT Workshop, GSI, 2011
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Plasma effects
5. TIME RESOLVED IBIC - TRIBIC Plasma effects
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Significantely higher charge trapping at low temperatures !!
5. TIME RESOLVED IBIC - TRIBIC Charge trapping/detrapping
H. Jansen (CERN), CARAT Workshop, GSI, 2011
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Detrapping (~ 10 ns)
5. TIME RESOLVED IBIC - TRIBIC Charge trapping/detrapping
H. Jansen (CERN), CARAT Workshop, GSI, 2011
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5. TIME RESOLVED IBIC - TRIBIC
Position sensitivity- scCVD diamond, 500 μm thick- lateral scan with 4.5 MEV p- (μτ)e< (μτ)h
- 6 GHz, 15dB preamp (Minicircuits)- 5 GHz, 10 GS/s scope (LeCroy)
0 500μm
Achievable resolution ≈ 10 μm
500 μm thick scCVD diamond
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Thank you for attention!