detection plan for stein, telescope of the space mission cinema 1 august 3td 2011-diana renaud
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Detection plan for STEIN, telescope of the space mission CINEMA
August 3td 2011-Diana Renaud
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• STEIN has 32 detectors : neutral atoms, electrons ans ions• Energy range : 2 – 300 keV (for electrons)• FOV
• Charge particle : 40° x 70°• ENA : 20° x 80°
• Energy resolution : 1 keV• Possible to generate precise particle spectra
• Dectector : Silicon Semiconductor Dectector with thin entrance window
• Noise performance of IDeF-X : possible to exploit the extremely low capacitance of these detectors
Detection plan
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Detectors
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• SSD: reverse-biased silicon diode (p-n junction)• Main goal : minimize the diode reverse-leakage current (due to the
generation of carriers in the depletion region)
• Minimization of the noise• High quality float-zone refined silicon
• Interests of ultra-pure SC: large depletion layers
low defect concentrations => large lifetimes
• Gettering layer during process of fabrication• Define the size of the detector
Fabrication of the detectors
Comparison of 2 devices realized with and without the gettering layer
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About the fabrication of the detectors
High purity Si (n-type)
SiO2
n+ polysilicon gettering layer (~ 1m)
p+ B - implant
High purity Si (n-type)
SiO2
n+ polysilicon (100Å – 200Å)
p+ B - implant
Al Electrode
Before removing the gettering layer Final structure of the detector
•For flashing detectors: thickness of Al layer is determined by simulation and is about 900 Å
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Electrical tests
Probe card Frame to maintain detectors
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• Capacitance vs bias voltage
Upcoming tests
Results of THEMIS detectors
by measuring the capacitance vs bias voltage we can obtain the voltage at which the detector is fully depleted.In the case of THEMIS detector, it fully depletes by about 28 V.
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• Impurities concentration measurement• We can determine the final concentration by measuring the
capacitance and then plotting 1/C² vs bias volatage
Upcoming tests
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• Current vs biased voltage
Upcoming tests
This characteristic gives the leakage current for each pixel vs bias voltage
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Tests with IDeF-X : • Characterization of the front-end electronics without
detectors to determine the gain and noise vs the peaking time (performance evaluation of the circuit)• Simulation of a detector
Tests with IDeF-X and detectors : • Electrical test• Test with sources for the spectroscopy : evaluation of
the performances
Upcoming test
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• Further analyze the correlation between the results obtained by spectroscopy and those obtained by measurement noise (without source).• Extract the intrinsic resolution of the detector and check
that all the noise components are clearly identified.• If measurements are perfect, spectral resolution should be a
composition of the two individual components : electronic noise and the intrinsic resolution of the detector
Suggestions for the interpretation of results
FanoFWHM EENCFWHME ²²)( (theoretical value)