design and development of thin double side silicon microstrip sensors for cbm experiment

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Design and development of thin double side silicon microstrip sensors for CBM experiment Mikhail Merkin Skobeltsyn Institute of Nuclear Physics Moscow State University 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia 1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

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Design and development of thin double side silicon microstrip sensors for CBM experiment. Mikhail Merkin Skobeltsyn Institute of Nuclear Physics Moscow State University. 1-st CBM - Russia - JINR Collaboration Meeting May 19-22 , 2009 , Dubna , Russia. - PowerPoint PPT Presentation

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Page 1: Design and development of thin double side silicon microstrip sensors for CBM experiment

Design and development of thin double side silicon

microstrip sensors for CBM experiment

Mikhail MerkinSkobeltsyn Institute of Nuclear Physics

Moscow State University

1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

Page 2: Design and development of thin double side silicon microstrip sensors for CBM experiment

1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

Page 3: Design and development of thin double side silicon microstrip sensors for CBM experiment

Sensor Geometry

– According simulation optimal sensors size for central part, because very hard radiation environment and high multiplicity - 40 • 60 mm2

– Strip pitch for both sides - 58 μm– Stereoangle - ±7.5о

– Number of strips on both sides - 1024 – Number of readout chips for both sides -

8

1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

Page 4: Design and development of thin double side silicon microstrip sensors for CBM experiment

Sensor N-side Contact Pads

1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

Page 5: Design and development of thin double side silicon microstrip sensors for CBM experiment

N-side poly-Si resistors

1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

Page 6: Design and development of thin double side silicon microstrip sensors for CBM experiment

N-side p-stops configuration

1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

Page 7: Design and development of thin double side silicon microstrip sensors for CBM experiment

N-side Guard Rings

1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

Page 8: Design and development of thin double side silicon microstrip sensors for CBM experiment

Sensor P-side 1st and 2nd metal

1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

Page 9: Design and development of thin double side silicon microstrip sensors for CBM experiment

Sensor P-side 1st and 2nd metal details

1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

Page 10: Design and development of thin double side silicon microstrip sensors for CBM experiment

P-side Guard Rings

1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

Page 11: Design and development of thin double side silicon microstrip sensors for CBM experiment

Results

•Number of masks:•N-side – 8•P-side – 9

•Estimated production time - 3 months + 1 month for masks production.

1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

Page 12: Design and development of thin double side silicon microstrip sensors for CBM experiment

Expected

• Full Depletion Voltage (FDV) - <50 V• Working voltage – 70 - 250 V• Dark current at 100 V – < 15 nА/см2

• AC capacitance - >10 pF/см• Capacitors breakdown voltage -

>170 V• Bias resistor value - 1.0 ± 0.4 MOhm• Number of bad strips - <0.5%/side

1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia

Page 13: Design and development of thin double side silicon microstrip sensors for CBM experiment

Last

• This work have been done within CBM-MPD STS Consortium and supported by ISTC, see Yu. Murin presentation

1-st CBM-Russia-JINR Collaboration Meeting May 19-22, 2009, Dubna, Russia