design and analysis of micro-electro-mechanical …
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DESIGN AND ANALYSIS OF MICRO-ELECTRO-MECHANICAL
SYSTEM (MEMS) BASED DISPLACEMENT AMPLIFICATION
MECHANISM
Sohail Iqbal
(140961)
Department of Mechanical & Aerospace Engineering
Institute of Avionics and Aeronautics
Air University
Islamabad, Pakistan
(2019)
DESIGN AND ANALYSIS OF MICRO-ELECTRO-MECHANICAL (MEMS) SYSTEM BASED DISPLACEMENT AMPLIFICATION
MECHANISM
A Dissertation Presented to
The Academic Faculty
Sohail Iqbal
In Partial Fulfillment of the Requirements for the Degree PhD Mechanical Engineering in the
Department of Mechanical and Aerospace Engineering Institute of Avionics and Aeronautics
Air University [June 2019]
COPYRIGHT © 2019 BY SOHAIL IQBAL
Author’s Declaration
I, Sohail Iqbal hereby state that my PhD thesis titled “Design and Analysis of Micro-Electro-Mechanical (MEMS) System based Displacement Amplification Mechanism” is my own work and has not been submitted
previously by me for taking any degree from Air University, Islamabad or
anywhere else in the country / world.
At any time, if my statement is found to be incorrect even after my
graduation, the University has the right to withdraw my PhD degree.
Sohail Iqbal Jan, 2019
Plagiarism Undertaking
I solemnly declare that the research work presented in the thesis titled
“Design and Analysis of Micro-Electro-Mechanical System based Displacement Amplification Mechanism,” is solely my research work with no
significant contribution from any other person. Small contributions / help wherever
taken, has been duly acknowledged and that complete thesis has been written by
me.
I understand the zero tolerance policy of the HEC and Air University
towards plagiarism. Therefore, I, as an Author of the above titled thesis, declare
that no portion of my thesis has been plagiarized and any material used as
reference is properly referred / cited.
I undertake that, if I am found guilty of any formal plagiarism in the above
titled thesis even after award of PhD degree, the University reserves the rights to
withdraw / revoke my PhD degree and that HEC and Air University have the right
to publish my name on the HEC / Air University websites on which names of
students who submitted plagiarized thesis are placed.
Sohail Iqbal January, 2019
DESIGN AND ANALYSIS OF MICRO-ELECTRO-MECHANICAL (MEMS) SYSTEM BASED DISPLACEMENT AMPLIFICATION
MECHANISM Approved by:
Dr. Afzaal.M Malik, Advisor Department of Mechanical and Aerospace Engineering, IAA Air University, Islamabad, Pakistan
Dr. Rana Iqtidar Shakoor, Co-Advisor Department of Mechatronics Engineering Air University, Islamabad, Pakistan
Dr. Babar Saeed Department of Mechanical and Aerospace Engineering, IAA Air University, Islamabad, Pakistan
Dr. Shafaat Ahmed Bazaz Dean Academics, Center for Advanced Studies in Engineering, Islamabad, Pakistan
Dr. Ibraheem Haneef Department of Mechanical and Aerospace Engineering, IAA Air University, Islamabad, Pakistan
Date Approved: [June 27, 2019]
To my dear Parents, beloved wife Rabia, cute daughter
Maryam & sweet son in heavens Ahmed
ACKNOWLEDGEMENTS
I would like to express my deepest gratitude to Prof. Afzaal Malik at Air University,
Pakistan for introducing me to the amazing culture and philosophy behind research and
development in the field of MEMS. I don’t have enough words to thank Dr. Rana Iqtidar
Shakoor at Air University, Pakistan for his continuous guidance, encouragement and
support. Both of my supervisors provided me an ideal environment to explore ideas in this
emerging field of MEMS. I would also like to thank Prof. Yongjun Lai at MEMS Labs,
Queens University, Kingston, ON, Canada for valuable discussions and advice, and sharing
his expertise and resources with me during my research attachment at Queen’s. Thanks to
Dr. Shafaat Bazaz for helping me in establishing these collaborations through his network
of MEMS professionals in North America. Furthermore, I’d like to thank Air University
and Higher Education Commission, Islamabad, Pakistan. Without their financial support,
this PhD study as well as the research attachments at Queens could have not been possible.
I am thankful to Dr. Jehanzeb Masud, DG IAA, Chair Department of Mechanical and
Aerospace Engineering for providing me the administrative support and relieving me from
my duties for this study period.
During my research attachments at Queens, I enjoyed the company of Jino, Ayan, Rick,
Hanni and Angelica. Here I would like to mention especially my younger brother Salman
Ghaffar at Toronto, ON for his generous hospitality whenever I visited Toronto (which I
did very frequently, mostly because of home sickness). Furthermore, I am also very
grateful to Dr. Ahmed and his family at Kingston for yummy dinners and making my Eid
day special.
I am extremely grateful to Prof. Yongjun Lai, Prof. Michael Kraft, Prof. Karl F.
Böhringer, Prof. Ronald A. Coutu, Prof. Brian D. Jensen and Asst. Prof. Mubasher
Saleem for evaluating my PhD thesis. My heartiest thanks to Prof. Shafaat Bazaz, Prof.
Babar Saeed and Prof. Ibraheem Haneef for their guidance and support.
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TABLE OF CONTENTS
ACKNOWLEDGEMENTS iv
LIST OF TABLES viii
LIST OF FIGURES ix
SUMMARY xii
LIST OF PUBLICATIONS xiii
CHAPTER 1. Introduction 1 1.1 Literature Review 2 1.2 Motivation 16 1.3 Objectives and Methodology 21 1.4 Outline of Dissertation 23
CHAPTER 2. Design of Micro Displacement Amplification Mechanism 26 2.1 Introduction 26 2.2 Modeling of Micro Displacement Amplification Mechanism 26 2.3 Configurations of Micro Displacement Amplification Mechanism 27
2.3.1 Configuration 1 28 2.3.2 Configuration 2 29 2.3.3 Configuration 3 30
2.4 Analytical Modeling 30 2.4.1 Mathematical Model 30 2.4.2 Matrix Method 31 2.4.3 Strain Energy Approach 33
2.5 Fabrication of Prototypes 35 2.5.1 Material Selection 35 2.5.2 Fabless Strategy 37 2.5.3 Proposed MUMPs Process 37
2.6 Conclusions 38
CHAPTER 3. Numerical Analysis of Micro Displacement Amplification Mechanism 39 3.1 Introduction 39 3.2 Parametric Analysis 39
3.2.1 Kinematic Analysis 39 3.2.2 Kinetic Analysis 43
3.3 Finite Element Analysis using Direct Stiffness Method 47 3.3.1 Disintegration of Designed Mechanism 49 3.3.2 Element Stiffness Matrices 49 3.3.3 Element External Force Matrices 54 3.3.4 Assemblage of Element Stiffness Matrices 60
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3.3.5 Assemblage of Element Load Matrices 62 3.3.6 Finding Unknown Displacements 62
3.4 Conclusions 64
CHAPTER 4. Finite Element Analysis Using Intellisuite® 66 4.1 Introduction 66 4.2 ABAQUS 67 4.3 Extended Finite Element Method 67 4.4 Static Analysis of Three Configurations 70
4.4.1 Configuration 1 71 4.4.2 Configuration 2 74 4.4.3 Configuration 3 74
4.5 Modal Analysis 79 4.6 Comparison of Amplification Factor 79 4.7 Conclusions 80
CHAPTER 5. Displacement Amplification Mechanism Fabrication and Characterization 81 5.1 Introduction 81 5.2 PolyMUMPs 81 5.3 Kinematic Analysis 83
5.3.1 Configuration 1 84 5.3.2 Configuration 2 85 5.3.3 Configuration 3 87
5.4 Force Analysis 89 5.4.1 Configuration 1 90 5.4.2 Configuration 2 91 5.4.3 Configuration 3 92
5.5 Natural Frequency Calculation 92 5.6 Comparison of Amplification Factors 98 5.7 Conclusions 101
CHAPTER 6. Variant of Displacement Amplification Mechanism 103 6.1 Introduction 103 6.2 Design Description 104 6.3 Analytical Modelling 106
6.3.1 Mathematical Model 106 6.4 Numerical Analysis 107 6.5 Parametric Analysis 111 6.6 Finite Element Analysis 123 6.7 Experimentation 126
6.7.1 Kinematic Analysis 127 6.7.2 Force Analysis 130 6.7.3 Comparison of Results 130
6.8 Conclusions 131
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CHAPTER 7. Micro Displacement Amplification Mechanism incorporated with Chevron Shaped Thermal Actuator 132 7.1 Introduction 132 7.2 Design Description 132 7.3 Mathematical Modeling 135 7.4 Modal Analysis 136 7.5 Steady State Static Thermal Electrical Analysis 137 7.6 Conclusions 145
CHAPTER 8. Conclusions and Recommendations 146 8.1 Conclusions 146 8.2 Recommendations 149
REFERENCES 151
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LIST OF TABLES
Table 1-1 Review of performance parameters of different amplification mechanisms explored by researchers ..................................................................................................... 15 Table 3-1 Geometric parameters and material properties of the designed mechanism .... 45 Table 4-1 Frequencies and associated modes of three configurations of the mechanism 79 Table 4-2 Comparison of displacement amplification factors .......................................... 80 Table 5-1 Natural frequencies of three configurations of the displacement amplification mechanisms ....................................................................................................................... 97 Table 5-2 Comparison of natural frequencies of three configurations of displacement amplification mechanism .................................................................................................. 98 Table 5-3 Comparison of displacement amplification factors .......................................... 99 Table 5-4 Comparison of FEM and experimental amplification factors of configuration 1, 2 & 3 ................................................................................................................................. 99 Table 6-1 Physical properties and dimensions of device ................................................ 123 Table 6-2 Comparison of analytical, FEM and Experimental results ............................. 131 Table 7-1 Natural frequencies of the proposed device ................................................... 137 Table 7-2 Parametric values of variables used in steady state static thermal electrical analysis ........................................................................................................................... 138
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LIST OF FIGURES
Figure 1-1 Schematic diagram of bridge-type mechanism (Lobontiu and Garcia, 2003) .. 3 Figure 1-2 A schematic of three flexure pivots levers in series (Jouaneh and Yang, 2003)............................................................................................................................................. 4 Figure 1-3 Schematic diagram of linear micropositioner (1) Piezoelectric actuator, (2) lever guide device, (3) lever mechanism, (4) toggle amplification mechanism, (5) flexible pivot, (6) parallel guide spring, (7) friction tip, (8) fixed screw holes, (9) preload spring and adjustment screw, (10) cut-out slot to form flexure hinges, (11) flexure hinges and (12) frame (Chu and Fan, 2006) ......................................................................................... 5 Figure 1-4 Schematic diagram of bridge-type mechanism (Ma et al., 2006) ..................... 6 Figure 1-5 FEM model and deformation pattern of the Scott–Russell mechanism (Tian et al., 2009) ............................................................................................................................. 7 Figure 1-6 (a) Artist view of the accelerometer designed by Ya’Akobovitz (b) Deformed shape of the device obtained from finite element simulation (Ya’Akobovitz and Krylov, 2010) ................................................................................................................................... 8 Figure 1-7 Schematic of the single-stage mechanically amplified capacitive accelerometer. The direction of motion is along the y-axis (Zeimpekis et al., 2012) ...... 10 Figure 1-8 A flexure-based bridge-type displacement amplifier with a backward output (Xu and Li, 2011) .............................................................................................................. 11 Figure 1-9 Schematic diagram of Bridge-type mechanism (Qi et al., 2015) .................... 12 Figure 1-10 Schematic diagram of bridge-type mechanism (Lai and Zhu, 2017) ............ 13 Figure 1-11 (a) Schematics of microgripper design (b) Complete microgripper design with integrated capacitive contact sensor (Bazaz, Khan and Shakoor, 2011) .................. 20 Figure 2-1 (a) Schematic diagram of the proposed amplification mechanism (b) Half model of the proposed amplification mechanism at two positions ................................... 27 Figure 2-2 Schematic diagram of proposed amplification mechanism showing functioning having configuration no. 1 ............................................................................. 28 Figure 2-3 Schematic diagram of proposed amplification mechanism showing functioning having configuration no. 2 ............................................................................. 29 Figure 2-4 Schematic diagram of proposed amplification mechanism showing functioning having configuration no. 3 ............................................................................. 30 Figure 2-5 Quarter model of displacement amplification mechanism .............................. 31 Figure 2-6 Spring model of displacement amplification mechanism ............................... 32 Figure 3-1 Schematic diagram of the mechanism ............................................................. 40 Figure 3-2 Plot of Input displacement vs. Amplification Factor showing a decrease in amplification factor from 26.75 to 15.50 .......................................................................... 41 Figure 3-3 Parametric analysis showing change in amplification factor with varying angle made by micro-flexure ...................................................................................................... 42 Figure 3-4 Parametric analyses showing significant increase in amplification factor with increasing length from 250 μm to 600 μm but after 600 μm the change in amplification factor becomes insignificant ............................................................................................. 43 Figure 3-5 Plot showing linear relationship between output force along (a) Y-axis (b) Z-axis and input displacement produced by application of force to the side masses ........... 44
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Figure 3-6 (a) Plot showing a decrease in output force with increasing micro-flexure length (b)Plot showing a decrease in output force with increasing micro-flexure angle .. 46 Figure 3-7 Schematic diagram of the beam element ........................................................ 48 Figure 3-8 Schematic diagram of the disintegrated mechanism ....................................... 49 Figure 4-1 Solid model of micro displacement amplification mechanism ....................... 66 Figure 4-2 (a) Input displacement of 1 μm given to side mass along X-axis (b) Output displacement of 9.17 μm produced along Y-axis ............................................................. 72 Figure 4-3 (a) Reaction force produced along X-axis (b) Y-axis, with an application of input displacement of 1 μm along X-axis ......................................................................... 73 Figure 4-4 (a) Input displacement of 1 μm given to side masses along X-axis (b) Output displacement of 17.09 μm produced along Y-axis ........................................................... 75 Figure 4-5 (a) Reaction force produced along X-axis (b) Y-axis, with an application of input displacement of 1 μm along X-axis ......................................................................... 76 Figure 4-6 (a) Input displacement of 1 μm given to side masses along X-axis (b) Output displacement of 17.04 μm produced along Y-axis ........................................................... 77 Figure 4-7 Reaction forces produced along (a) X-axis (b) Y-axis, with an application of 1 μm input displacement ...................................................................................................... 78 Figure 5-1 Seven layers of the PolyMUMPs process (Cowen et al., 2013) ..................... 82 Figure 5-2 Reference image to find pixel density per µm ................................................ 84 Figure 5-3 Microscopic image of the configuration 1 of micro displacement amplification mechanism ........................................................................................................................ 85 Figure 5-4 Microscopic image of the prototype after application of force along X-axis to the side mass producing output displacement of 8.44 μm along Y-axis .......................... 85 Figure 5-5 Microscopic image of the configuration 2 of micro displacement amplification mechanism ........................................................................................................................ 86 Figure 5-6 (a) Microscopic image of the output before application of force (b) Microscopic image of the output after application of force .............................................. 86 Figure 5-7 Microscopic image of the configuration 3 of micro displacement amplification mechanism ........................................................................................................................ 87 Figure 5-8 (a) Microscopic image of the output before application of force (b) Microscopic image of the output after application of force .............................................. 88 Figure 5-9 Deflection vs. input force plot of configuration 1 ........................................... 91 Figure 5-10 Deflection vs. input force plot of configuration 2 ......................................... 91 Figure 5-11 Deflection vs. input force plot of configuration 3 ......................................... 92 Figure 5-12 Comparison of FEM and experimental results of force analysis of configuration 1 ................................................................................................................ 100 Figure 5-13 Comparison of FEM and experimental results of force analysis of configuration 2 ................................................................................................................ 100 Figure 5-14 Comparison of FEM and experimental results of force analysis of configuration 3 ................................................................................................................ 101 Figure 6-1 Schematic diagram of displacement amplification mechanism .................... 104 Figure 6-2 Spring model of displacement amplification mechanism ............................. 105 Figure 6-3 Input displacement U1y vs. AF1 ..................................................................... 108 Figure 6-4 Input displacement U1y vs. output displacement U4x .................................... 108 Figure 6-5 Input displacement U4x vs. AF2 ..................................................................... 109 Figure 6-6 Input displacement U4x vs. output displacement U8y .................................... 109
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Figure 6-7 Input displacement U1y vs. AF3 ..................................................................... 110 Figure 6-8 Input displacement U1y vs. Output displacement U8y ................................... 110 Figure 6-9 Input displacement U1y vs. AF1 ..................................................................... 112 Figure 6-10 Input displacement U1y vs. output displacement U4x .................................. 113 Figure 6-11 Input displacement U4x vs. AF2 ................................................................... 114 Figure 6-12 Input displacement U4x vs. output displacement U8y .................................. 115 Figure 6-13 Input displacement U1y vs. AF3 ................................................................... 116 Figure 6-14 Input displacement U1y vs. output displacement U8y .................................. 117 Figure 6-15 Input displacement U1y vs. AF1 ................................................................... 118 Figure 6-16 Input displacement U1y vs. output displacement U4x .................................. 119 Figure 6-17 Input displacement U4x vs. AF2 ................................................................... 120 Figure 6-18 Input displacement U4x vs. output displacement U8y .................................. 120 Figure 6-19 Input displacement U1y vs. AF3 ................................................................... 121 Figure 6-20 Input displacement U1y vs. output displacement U8y .................................. 122 Figure 6-21 Displacement produced along (a) X-axis and (b) Y-axis by the proposed mechanism with input displacement of 1 µm applied to four side masses ..................... 124 Figure 6-22 Reaction forces produced by the proposed mechanism with input displacement of 1 µm applied to four side masses along (a) X-axis and (b) Y-axis ...... 126 Figure 6-23 Microscopic image of proposed micro displacement amplification mechanism ...................................................................................................................... 128 Figure 6-24 (a) Microscopic image of the output before application of force (b) Microscopic image of the output after application of force ............................................ 129 Figure 6-25 Displacement vs. input force plot of micro displacement amplification mechanism ...................................................................................................................... 130 Figure 7-1 Schematic diagram of thermally actuated displacement amplification mechanism ...................................................................................................................... 133 Figure 7-2 Displacement produced along (a) X-axis (b) Y-axis when a biased voltage of 2V is applied to thermal chevrons .................................................................................. 139 Figure 7-3 Displacement produced along (a) X-axis (b) Y-axis when a biased voltage applied to thermal chevrons is varied from 1V to 6V ..................................................... 140 Figure 7-4 Plot of decreasing amplification factor with varying voltages from 1V to 6V......................................................................................................................................... 141 Figure 7-5 Reaction produced along (a) X-axis and (b) Y-axis by application of voltage bias of 2V to thermal chevrons ....................................................................................... 142 Figure 7-6 Reaction forces produced along (a) X-axis (b) Y-axis when a biased voltage applied to thermal chevrons is varied from 1V to 6V ..................................................... 143 Figure 7-7 Temperature distribution of proposed device at 2V bias voltage ................. 144 Figure 7-8 Plot shows an increase in temperature with increasing bias voltage ............ 145
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SUMMARY
This PhD dissertation reports design and analysis of Micro-Electro-Mechanical system
(MEMS) based displacement amplification mechanism. The proposed displacement
amplification mechanism has been designed and tested in three different configurations
giving experimental amplification factors of 7.6, 16 and 16.14 respectively. The
mechanism has been analytically modeled using kinematic and Direct Force Displacement
Method. Numerical simulations are carried out by writing a code using MATLAB. Results
are found in good agreement with that of the simulated results using FEM based software
IntelliSuite® and experimental results substantiating the viability of this displacement
amplification mechanism. Parametric analysis of the proposed mechanism evaluated the
effect of different geometric parameters, hence finalizing the design geometry. The
analysis predicts that length and the angle of flexure are the two key geometric parameters
that significantly affect amplification factor and have direct relationship with length and
inverse relationship with angle of micro-flexure. Natural frequencies and associated mode
shapes of all three configurations of mechanism during free vibrations have been
determined from modal analysis. Polysilicon based Multi-User MEMS Processes
(PolyMUMPs) has been used for the fabrication of all micro displacement amplification
mechanism prototypes. A micro mechanical probe station equipped with tungsten and
acupuncture needles has been used to test the functionality of prototypes. The amplification
mechanism can be incorporated with micro gripers for increasing displacement at jaw tip.
Design and analysis of a variant of displacement amplification mechanism consisting of
two configurations of designed amplification mechanisms having experimental
amplification factor of 5.8 has been proposed. Thermal and static analysis simulations of
configuration 3 of the designed displacement amplification mechanism incorporated with
thermal chevron actuator and electrostatic comb drives have been carried out and results
discussed in detail at the end.
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LIST OF PUBLICATIONS
1. Iqbal, S., Malik, A. A., & Shakoor, R. I. (2019). Design and analysis of novel micro displacement amplification mechanism actuated by chevron shaped thermal actuators. Microsystem Technologies, 25(3), 861–875. https://doi.org/10.1007/s00542-018-4078-9
2. Iqbal, S., Shakoor, R. I., Lai, Y., Malik, A. M., & Bazaz, S. A. (2019). Experimental evaluation of force and amplification factor of three different variants of flexure based micro displacement amplification mechanism. Microsystem Technologies. https://doi.org/10.1007/s00542-019-04313-6
3. Iqbal, S., Malik, A., & Shakoor, R. I. (2018). Kinematic sensitivity analysis of a novel micro-mechanism for displacement amplification. Transactions of the Canadian Society for Mechanical Engineering, 42(4), 436–443. https://doi.org/10.1139/tcsme-2017-0149
4. Iqbal, S., Shakoor, R. I., Gilani, H. N., Abbas, H., & Malik, A. M. (2018). Performance Analysis of Microelectromechanical System Based Displacement Amplification Mechanism. Iranian Journal of Science and Technology, Transactions of Mechanical Engineering. https://doi.org/10.1007/s40997-018-0213-6
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CHAPTER 1. INTRODUCTION
Microelectromechanical system (MEMS) is a field comprising of micro size
electromechanical devices and structures that are fabricated using special fabrication
procedures. MEMS has played a vital role in revolutionizing inertial sensors and actuators.
System miniaturization, easy integration, small size and weight make MEMS attractive for
many commercial applications. MEMS technology has a remarkable capability of
integrating sensors, actuators and signal processing on a single chip and their integration
has constructive effects upon performance, reliability and cost (Bell et al., 2005).
Amplification mechanisms based on compliant structures are gaining importance in
MEMS applications where motion precision, reliability, accuracy, and compactness are
needed (Bharanidaran and Srikanth, 2016). These displacement amplification mechanisms
govern the sensitivity and performance of micro-devices. Large voltage stroke ratio (µm/V)
is of primary concern for MEMS devices like micro-actuators, micro-gyroscopes and
micro-pumps (Shakoor et al., 2011). So, the role of an amplified displacement with
improved voltage-stroke ratio becomes imperative.
In this dissertation, design, analysis and characterization of a displacement amplification
mechanism for MEMS based micro grippers is presented. In this chapter, an introduction
to micro displacement amplification mechanisms is given. A literature review in the area
of micro displacement amplification mechanisms has been carried out in detail. The
motivation and objectives of the research are presented followed by description of the
general layout of this dissertation.
1
1.1 Literature Review
Producing substantial translational movements has been challenging and of primary
significance in field of MEMS especially in case of sensors and actuators. Performance of
these actuators can be enhanced by incorporating an intermediate mechanism that amplifies
the actuated displacement at the output. These miniaturized amplification mechanisms
should consume less power, be light weight and easily manufacturable with standard
MEMS fabrication techniques.
Typically, for micro displacement amplification mechanism designs, micro-flexures and
micro-hinges are used because they do not need lubrication, have no backlash, have
repeatable motion and are vacuum compatible (Choi, Sreenivasan and Choi, 2008; Liaw
and Shirinzadeh, 2008; Yue et al., 2010; Zongyue Ni ; Dawei Zhang; Yingjun Wu ;
Yanling Tian ; Ming Hu, 2010). Enhancing seismic mass displacement plays an important
role in enhancing the sensitivity of MEMS device by sustaining a high compliance and
low damping coefficients along the sense axis (Yazdi and Najafi, 2000; Amini, Abdolvand
and Ayazi, 2006; Abdolvand, Amini and Ayazi, 2007; Xue et al., 2008; Hsu et al., 2010).
To suspend proof mass, compliant mechanisms are used which are typically flexures. They
not only act as suspensions but also act as joints (L. L. Howell, 2001).
Pokines and Garcia (Pokines and Garcia, 1998) developed a MEMS based micro
amplification device through integration of smart material with MEMS theory. Lobontiu
and Garcia (Lobontiu and Garcia, 2003) used the principle based on strain energy and
Castigliano’s second theorem to analyze the relationship between the ideal displacement
amplification ratio of bridge-type mechanism and input displacement as shown in Figure
2
1-1. Authors formulated an analytical method for displacement and stiffness calculations
of planar compliant mechanisms with single-axis flexure hinges. A parametric study of the
mechanism performance was performed based on the mathematical model. Neither the
mechanism was analyzed dynamically nor was experimentation carried out. Only
numerically and FEM results were compared.
An efficient approach for the modeling and simulation of single-axis, flexure-hinge type,
translational, piezo driven micro positioning stages was reported by Jouaneh and Yang in
2003 as shown in Figure 1-2 (Jouaneh and Yang, 2003).
Figure 1-1 Schematic diagram of bridge-type mechanism (Lobontiu and Garcia, 2003)
3
Figure 1-2 A schematic of three flexure pivots levers in series (Jouaneh and Yang, 2003)
A novel long-travel piezoelectric-driven linear nano-positioning stage capable of operating
in stepping mode as well as in a scanning mode was reported in 2006, as shown in Figure
1-3. In the stepping mode, the stick–slip friction effect between a linear micro-positioner
and a sliding stage was used to drive the stage step-by-step. In the scanning mode, the
micro-positioner acts as an elastic deformation-type linear displacement amplification
device and drives the stage through displacements in the micrometer level range (Chu and
Fan, 2006). However, non-linearity effects of elastic deformations were not considered.
Moreover, the stress increases in higher values for smaller displacements leading to the
failure of mechanism.
4
Figure 1-3 Schematic diagram of linear micropositioner (1) Piezoelectric actuator, (2) lever guide device, (3) lever mechanism, (4) toggle amplification mechanism, (5) flexible pivot, (6) parallel guide spring, (7) friction tip, (8) fixed screw holes, (9) preload spring and adjustment screw, (10) cut-out slot to form flexure hinges, (11) flexure hinges and (12) frame (Chu and Fan, 2006)
Ma et al. (Ma et al., 2006), using kinematic theory and virtual work principle, derived the
ideal displacement amplification ratio of bridge-type mechanism, as shown in Figure 1-4.
Authors presented ideal amplification ratio against angular change, but the formulations
were not suitable for smaller angles which are useful for gaining large amplification ratios.
Theoretical amplification factor of 40 and that obtained by Finite Element Method (FEM)
was 20. FEM was used for comparison with the mathematical model, and to analyze the
mode shapes of the structure (Ma et al., 2006). Effect of thickness on displacement
amplification ratio was discussed in detail but length and width were not discussed. No
experimentation was carried out to validate the design.
5
Figure 1-4 Schematic diagram of bridge-type mechanism (Ma et al., 2006)
A flexure-based Scott–Russell mechanism was designed and developed in 2009 for the
nano-manipulation applications using piezoelectric actuator that improved mechanical
performance, as shown in Figure 1-5. Finite element analysis (FEA) was used to investigate
the mechanical structure of the Scott–Russell mechanism. A lumped parameter dynamic
model of the flexure based Scott–Russell mechanism was developed to investigate the
vibration and dynamic responses (Tian et al., 2009).
6
Figure 1-5 FEM model and deformation pattern of the Scott–Russell mechanism
(Tian et al., 2009)
Assaf Ya’akobovitz and Slava Krylov used proof mass displacement for mechanical
amplification, as shown in Figures 1-6 (a & b). Using their proposed mechanical
amplification principle, authors presented an operational principle of MEMS inertial sensor
having improved sensitivity. Silicon-on-insulator (SOI) technology was used to fabricate
the devices. The devices were operated using electrostatic and inertial actuation of the
proof mass combined with the optical sensing (Ya’Akobovitz and Krylov, 2010). Bending
compliance was not taken into consideration that has major effect on length of sensing
element.
7
Figure 1-6 (a) Artist view of the accelerometer designed by Ya’Akobovitz (b) Deformed shape of the device obtained from finite element simulation
(Ya’Akobovitz and Krylov, 2010)
8
Authors presented an operational principle based on the out-of-plane linear to angular
motion transformation that was achieved using an integrated compliant motion amplifier.
Out-of-plane deflections of the proof mass are in nanometers that are amplified 12.1 times
under inertial forces. Since this is a capacitive sensing device that may result in improved
sensitivity because acceleration was extracted from measured large tilting deflections of
the sensing element (Ya’Akobovitz and Krylov, 2010).
Dimensions of suspension mechanism act as a limiting factor for sensitivity by restricting
the motion according to their stiffness(Zeimpekis, Sari and Kraft, 2012). Performance of
MEMS sensors, that are entirely dependent on deflection to produce an output signal, was
enhanced by incorporating mechanical motion amplifiers. A single-axis mechanically
amplified capacitive accelerometer, using a system of micromechanical levers, with
amplification factor of 40 was designed, simulated, and fabricated by Zeimpekis et al., in
2012 with improved sensitivity, as shown in Figure 1-7. Authors showed that the addition
of the mechanical amplifier provides higher deflection without sacrificing bandwidth and
does not alter the noise floor of the sensor. The mechanical motion amplifier produces large
displacement that improves the capacitive signal at electronic readout stage as compared
to the conventional accelerometer design. Mechanical amplifier implemented with large
sensing element does not add significant Brownian noise nor does it influence the
electronic noise level of the interface circuitry. Hence, the overall signal-to-noise ratio
(SNR) of the sensor is improved (Zeimpekis, Sari and Kraft, 2012). Implementation of
system of microlevers to an accelerometer produced statically indeterminate mechanism
and bulky equations, which were not analyzed.
9
Figure 1-7 Schematic of the single-stage mechanically amplified capacitive accelerometer. The direction of motion is along the y-axis (Zeimpekis et al., 2012)
Some other types of amplification mechanisms are also used such as lever type mechanism
(Jouaneh and Yang, 2003; Chu and Fan, 2006), bridge-type, four bar linkage and Scott-
Russell mechanisms (Xu and King, 1996; Kim, Kim and Kwak, 2004; Ma et al., 2006;
Tian et al., 2009; Xu and Li, 2011).
A flexure based compound bridge-type displacement amplifier having large amplification
ratio, compact size, higher lateral stiffness values was reported in 2011, as shown in the
Figure 1-8 (Xu and Li, 2011). One drawback of this amplifier was its low lateral stiffness
value. If the amplifier observed a large lateral load, the low lateral stiffness will not be
sufficient to tolerate it. To resolve this issue, double bridges were constructed making the
mechanism structure complex.
10
Figure 1-8 A flexure-based bridge-type displacement amplifier with a backward output (Xu and Li, 2011)
Ye et al. (Ye et al., 2010) used kinematic principle and elastic beam theory to analyze the
theoretical displacement amplification ratio of bridge-type mechanism. Authors
established a relationship between length and angle of flexural hinge with the amplification
ratio. Amplification ratio first increases then decreases with increase in flexure hinge length
giving maximum value at 0.688°. An amplification factor of 45 was obtained. Authors did
not considered tensile deformation and deflection of the hinges.
Ke-qi Qi et al. (Qi et al., 2015) analyzed kinematics of bridge type mechanism and derived
displacement amplification ratio formula using elastic beam theory. It was concluded that
the displacement amplification ratio of bridge-type mechanism was not related to the
material and thickness of the structure, and it was verified by FEA. Authors compared
different existing analytical models with their own. Results of linear and non-linear static
analysis were presented for different input displacements. An amplification factor of
approximately 7 was obtained. Analytical results were not verified by experiments.
11
Figure 1-9 Schematic diagram of Bridge-type mechanism (Qi et al., 2015)
The static and dynamic characteristics of the mechanically coupled and electrostatically
actuated H resonator with amplified output using polyimide as the structural layer was
presented by Ilyas et al. (Ilyas, Jaber and Younis, 2016). The electrode network allowed
the resonator to be actuated from either of the C-C beams or the coupler.
The effective actuation stroke of piezoelectric actuator was enhanced by Lai and Zai (Lai
& Zhu, 2017) with the help of displacement amplification mechanism as shown in Figure
1-10. The mechanism operational frequencies with and without actuator mounted were 155
Hz and 178 Hz respectively (Lai & Zhu, 2017).
12
Figure 1-10 Schematic diagram of bridge-type mechanism (Lai and Zhu, 2017)
Based on the elastic beam theory, a better analytical model of displacement amplification
ratio was derived for bridge-type amplification mechanism (Lin, Shen, Wu, & Yu, 2018).
The analytical model was compared with existing models, FEA and prototype. Kinematic
model for 6 DOF micro/nano positioning stage based on the improved analytical model
was developed.
A 3-D bridge-type mechanism was improved and compared with the previous designs
having advantages of compact size, simple design and symmetric structure (Chen et al.,
2018). Kim et al., (Kim, Kim and Kwaka, 2003) combined two bridge type mechanisms
13
and proposed a three dimensional amplification mechanism. It was expected that the
amplification will increase but it decreased from 98 to 10. Chen et al. (Chen et al., 2018)
presented that the reason of decrease in amplification factor was non configuration of
stiffness distribution in the two bridges. Authors improved the design by properly
configuring the overall stiffness of the mechanism. In addition to evaluating amplification
ratio, amplification rate was also analyzed that predicted the displacement loss in the
mechanism. Performance of the amplifier with amplification ratio of 41 and relative
amplification rate of 0.93 was confirmed with FEA simulation and experiments. Four types
of flexure, leaf, cartwheel, right circular and leaf hinges were compared and V type proved
to be the one giving maximum amplification (Chen et al., 2018).
A comparison of different characteristics of displacement amplification mechanisms is
shown in the Table 1-1. Most of the designed amplifiers produce in-plane amplified
displacements. Accelerometers, piezoelectric and electrostatically operated devices can be
benefited by mechanically amplifying signals. Drawbacks of displacement amplifiers is
that overall stiffness of the device increases that ultimately affects the modal frequencies.
Incorporation of these amplifiers increases the overall size of the micro device. When it
comes to electrostatic actuation or sensing an amplifier benefits by increasing output
deflections without affecting the noise level.
14
Table 1-1 Review of performance parameters of different amplification mechanisms explored by researchers
Reference In-Plane/ Out of plane
Displacement amplification
factor
Mechanism type
Theory Operating frequency
Manufacturing process
(Lobontiu and Garcia,
2003)
In-Plane
10 Flexure based
compliant
Castigliano’s theorem and elastic beam
theory
_
_
(Kim, Kim and Kwaka,
2003)
Out of plane
41 Flexure based
compliant
screw theory _ Wire-EDM
(Ma et al., 2006)
In-Plane
20 Flexure based
compliant
Elastic beam theory
_ _
(Chu and Fan, 2006)
In-Plane
13.7 Flexure based
compliant
Lever principle 1060 Hz Electrical discharge machining
(EDM) (Tian et al.,
2009) In-
Plane 10 Flexure
based compliant
Kinematics by geometry and Hookes law
114Hz Wire EDM
(Ya’Akobovitz and Krylov, 2010)
Out of plane
12.1 Flexure based
compliant
Lumped mass 2.87kHz SOI - DRIE
(Ye et al., 2010)
In-Plane
43 Flexure based
compliant
Elastic beam theory
_ Wire EDM
(Xu and Li, 2011)
In-Plane
4.5 Flexure based
compliant
Euler–Bernoulli beam theory
377.9 Hz
(Zeimpekis, Sari and
Kraft, 2012)
In-Plane
40 Flexure based
compliant with
micromechanical levers
Mass spring ODE’s
749Hz SOI-DRIE
(Qi et al., 2015)
In-Plane
7 Flexure based
compliant
Elastic beam theory
_ _
(Lai and Zhu, 2017)
In-Plane
27.5 Lever type Mass spring ODE’s
155 Hz EDM
(Lin et al., 2018)
Out of plane
12 Flexure based
compliant
Energy principle and elastic beam
theory
_
Wire EDM
Design and development of MEMS based devices having small size, capable of producing
large displacement with low power consumption, has always been prime focus of
designers. Electrostatic, electro-thermal, piezoelectric and electro-magnetic are the
conventional actuation mechanisms.
15
Thermal actuators using thermal expansion effects, activated by Joule heating, can provide
a large force and actuation in directions parallel and perpendicular to the substrate and
fabricated using micro-micromachining technology. Thermal actuators are categorized as
hot/cold arm thermal actuators and ‘V’ or ‘Chevron’ shaped actuators (Hickey et al., 2003;
Y. Lai, J. McDonald, M. Kujath, 2004). In-plane thermal actuators are classified as
bimorph design (Comtois, Bright and Phipps, 1995) and the chevron design (Que, Park
and Gianchandani, 1999; Rubbeca Cragun, 1999). Sinclair and Wang stated that chevron
shaped actuator as more efficient since “all bending beams are force-producing, even when
they are arrayed to increase output force” (Sinclair and Wang, 2003).
Vertical displacement of a chevron actuator is unwanted in design. Sinclair (Sinclair, 2000)
proposed measures to prevent these types of side effects. There is no vertical displacement
if conventional thermal chevrons is used because of constant width of micro beams and
constant pre-bending angle (Varona, Tecpoyotl-Torres and Hamoui, 2009a).
This dissertation presents design, analysis and experimentation of a new micro
displacement amplification mechanism. The viability of design is validated through
comparison of analytical, FEA (using commercial software IntelliSuite®) and
experimental results.
1.2 Motivation
One challenge that researchers have faced, while designing MEMS based inertial sensors
and actuators, is the production of significant output motions against smaller input
displacements. The challenge has been handled with thought provoking ideas in the area
of micro displacements amplification mechanisms (Bolzmacher et al., 2010; Lin et al.,
16
2018). These mechanisms, when incorporated into sensors and actuators, showed
remarkable increase in performance of devices without consuming high power and
manufacturing cost as they are easily made through standard MEMS fabrication techniques
(Millet et al., 2004; Ya’Akobovitz and Krylov, 2010).
A compliant based displacement amplifier has been proven to be helpful whether it’s piezo-
electric actuation or electrostatic sensing because of its adjustable compliant properties
merely based on micro flexures and flexure hinges. Wish to get more and more
displacement amplification has led to complex geometries generating nonlinearities in the
whole device design. Complicated designs and flexure hinges become source of stress
concentration that lead to failure especially when the fabricated material is brittle like
polysilicon. Amplification mechanisms designed having complex geometry and flexure
hinges showed low lateral stiffness value that will not tolerate large lateral load. In this
scenario the mechanism is to be strengthened either by adding more flexures or by
changing the dimensions (Xu and Li, 2011). An attempt to increase the amplification factor
using two bridge-type mechanisms resulted into decrease in amplification factor. Reason
for this decrease was complex geometry resulted in non-configuration of stiffness
distribution in the two bridges. The design was improved by making size more compact,
simple and symmetric. Simple designs without complex geometries and complex flexural
hinge designs will solve the nonlinearity issues and will be helpful in amplifying small
linear or angular displacements which are useful for gaining large amplification ratios.
In-plane devices that are being operated using inertial actuation and electrostatic sensing
shows a significant improvement in capacitive signal with the incorporation of amplifier
(Han et al., 2015). However, undesired out of plane motions are not taken seriously that
17
can be handled with simple geometric changes and boundary conditions taking bending
compliance into consideration that has major effect on length of sensing element.
Designers have proposed amplification mechanisms specialized to the device design like
micro grippers, micro mirror positioners, micro accelerometers, micro actuators etc. (Millet
et al., 2004; Chen, Schneider and Wallrabe, 2010; Ya’Akobovitz and Krylov, 2010; Lin et
al., 2018) . Mechanical amplifiers do not add noise and have no influence on readout
circuitry, thus improving signal-to-noise ratio. However, adding a series of these amplifiers
make the system statically indeterminate.
Extensive research has been carried out to improve the performance of piezo-electric
actuators, capacitive actuators and accelerometers by incorporating displacement
amplifiers. However, application of amplifiers to thermal actuators, micro grippers and
energy harvesters is yet to be explored. Besides improving the overall performance of
device, displacement amplifiers increases overall size and stiffness of the device that
ultimately affects the modal frequencies.
Motivation of this research work is to design a MEMS based displacement amplification
mechanism to enhance the total displacement at the tip of jaws of already designed micro
grippers, by Bazaz et al. (Bazaz, Khan and Shakoor, 2011). An electrostatically actuated
microgripper with novel capacitive contact sensor was reported by Bazaz et al. (Bazaz,
Khan and Shakoor, 2011) as shown in Figures 1-11(a & b). The microgripper prototype
was fabricated using standard SOI-MUMPs process with total size of 5.03mm×6.5mm.
FEA of microgripper showed a total displacement of 15.5µm at the tip of jaws when
voltage of 50Vdc was applied at the actuator. When tested experimentally, a total
18
displacement of 17 µm at the tip of microgripper jaws with displacement amplification of
approximately 4.0 times was achieved. To enhance the output displacement at ends of jaws
an intermediate displacement amplification mechanism with high amplification factor is
required. So an intermediate displacement amplification mechanism, incorporated with the
microgripper design that could produce 20 times amplified displacement at the tip of jaws
with application of same voltage at the actuator is designed.
(a)
19
(b)
Figure 1-11 (a) Schematics of microgripper design (b) Complete microgripper design
with integrated capacitive contact sensor (Bazaz, Khan and Shakoor, 2011)
The proposed amplification mechanism gives different amplification factors with different
boundary conditions making it a versatile mechanism that can also be incorporated with
MEMS applications like micro accelerometers, micro actuator and micro energy
harvesters. This gives a freedom to the designer to utilize this mechanism in his/her design
as per requirements. The mechanism has been designed according to commercial available
fabrication process PolyMUMPs unlike devices that need customized fabrication process.
20
Apart from getting intellectual joy by doing some creative work, personal motivation of
doing this research is to gain knowledge in the wide area of MEMS especially compliant
based displacement amplification mechanisms and to be a part of an interdisciplinary
research team that consists of members with different professional and cultural
backgrounds.
1.3 Objectives and Methodology
Objective of this research is to design an efficient micro displacement amplification
mechanism, with a target amplification factor of 20, which can be incorporated with a
micro gripper. Apart from amplifying displacement 20 times, the proposed mechanism can
be utilized in three configurations giving different amplification factors. Three
configurations are achieved by changing only the boundary conditions.
Design methodology flow chart is shown below. Numerical analysis of the mechanism will
be done by using kinematic model followed by parametric analysis by coding the kinematic
model using MATLAB. Geometric parameters will finalized by taking into consideration
parametric analysis results, desired amplification factor, overall size of the mechanism and
PolyMUMPs design rules. Same parameters will be used for carrying out numerical
simulations with direct stiffness method that is an implementation of FEM. Configuration
2 will be our prime focus and will be numerically analyzed using kinematic model and
direct stiffness method. However, all the three configurations will be analyzed while doing
FEM static simulations using commercial software IntelliSuite®.
21
Problem Statement
Analytical modeling
Finite Element Analysis
Direct Stiffness Method
(FEM) using MATLAB
Results Comparison
Prototype Fabrication
Prototype Testing
Literature Review
Design Specifications
Parametric Analysis
Design parameters finalization
Numerical Analysis Kinematic analysis
using MATLAB
Refine the design
22
To carry out simulation on IntelliSuite®, the amplification mechanism will be designed in
a way that input displacement will be provided by thermal chevrons and output
displacement sensed by electrostatic comb drives. Same designs will be fabricated and
tested. To restrict out of plane motion, supporting flexures, attached to the ends of combs,
will be incorporated. Static analysis of displacement amplification mechanism having three
configurations will be carried out under unidirectional input displacement load conditions.
Prototypes of three configurations of displacement amplification mechanism will be
designed and fabricated according to Polysilicon-Multi User MEMS Processes
(PolyMUMPs) from MEMSCAP, USA. All the experimentation will be conducted in the
MEMS Lab, Queen’s University, Kingston, ON, Canada. Experimental results using the
developed model, simulated results using FEM based software IntelliSuite® and analytical
results will be compared substantiating the viability of this amplification mechanism.
A variant of displacement amplification mechanism consisting of configuration 2 and
configuration 3, of already designed and tested amplification mechanism, will be designed
and analyzed. Mathematical model of the mechanism will be developed using kinematic
approach followed by parametric analysis to optimize the design and finalize the design
parameters. FEA will be performed using commercial software IntelliSuite®. Prototype
will be fabricated and tested using same testing and fabrication facilities.
1.4 Outline of Dissertation
In chapter 1, literature review focusing on micro displacement amplification mechanisms
is presented. The review covered operating principles and application in particular.
Moreover, objective and motivation behind this research work is discussed briefly.
23
Chapter 2 broadly covers the kinematics and kinetics of displacement amplification
mechanism with its mechanical design implementation. Design of proposed displacement
amplification mechanism along with its three configurations has been discussed in detail.
After design implementation, we briefly discussed implementation of fabless strategy
using PolyMUMPs process.
Numerical results from analytical model of the mechanism have been presented in chapter
3. Results generated from kinematic and kinetic analysis have been discussed in detail.
Results obtained by parametric analysis of the designed mechanism have been
comprehensively concluded in this chapter. This chapter also presents implementation of
direct stiffness matrix method, a finite element analysis technique on the designed
mechanism. Main emphasis of this work is to demonstrate the implementation of FEA
technique. FEA model developed is simulated using a code giving nodal displacements and
forces produced on application of distributed load and the given boundary conditions.
In chapter 4, FEA of the designed mechanism is presented. Finite element simulations
including kinematic analysis, kinetic analysis and modal analysis are carried out to predict
the performance of the proposed mechanism.
In chapter 5, fabrication and characterization of proposed mechanism is presented.
Prototypes of the amplification mechanism are fabricated from MEMSCAP, USA through
CMC Microsystems, Canada using commercially available Multi-User MEMS Processes
PolyMUMPs. All the experimentation is conducted in the MEMS Lab, Queen’s University,
Kingston, ON, Canada. Manual Electric Probe System – SÜSS MicroTec PM5 has been
used to test prototypes. Prototypes are designed keeping in view design rules for
24
PolyMUMPs. IntelliMask has been used for the designing of mask layouts and design rule
checks. Experimental results and their comparison with FEM and numerical results is
presented in detail.
A variant of displacement amplification mechanism consisting of two configurations of
mechanism is discussed in chapter 6. FEA has been carried out using IntelliSuite® to verify
the analytical results from mathematical models. Based on the parametric analysis, design
has been optimized. Prototype has been fabricated using PolyMUMPs process and tested.
Chapter 7 presents static and thermal simulations carried out using IntelliSuite® software
of configuration 3 designed with thermal chevrons and electrostatic comb drives. Steady
state static thermal electrical analysis has been performed under variable resistivity and
voltage bias of 2V. Time domain simulations of device have been carried out with constant
electrical resistivity, variable voltage and convective boundary conditions.
In chapter 8, the conclusion of this research in the area of MEMS based displacement
amplification mechanisms is presented along with recommendations for future work.
25
CHAPTER 2. DESIGN OF MICRO DISPLACEMENT
AMPLIFICATION MECHANISM
2.1 Introduction
In previous chapter literature review, motivation and objective of research has been
discussed. In this chapter, design of micro displacement amplification mechanism is
presented. As a design part, three configurations, mathematical modeling and different
materials available for micro-fabrication have been described in detail. Mathematical
model of the mechanism is developed using a geometric approach for solving kinematics
and Castigliano’s approach to develop kinetic model. In the end, the fabless strategy and
proposed fabrication MUMPS process (i.e. PolyMUMPs) is discussed.
2.2 Modeling of Micro Displacement Amplification Mechanism
Figures 2-1(a & b) demonstrates the design and functioning of the proposed amplification
mechanism. The amplification mechanism consists of micro-flexures having one end
constraint and other ends are free to move. The displacement applied is amplified in the
direction perpendicular to the direction of applied displacement.
The input displacement applied along x-axis will produce deflections of flexures which is
then amplified in the direction perpendicular to the input displacement direction. Figure 2-
1(b) shows the half model of the suspension mechanism at two positions after application
of displacement. The bold line shows the position before application of displacement.
26
(a)
(b)
Figure 2-1 (a) Schematic diagram of the proposed amplification mechanism (b) Half model of the proposed amplification mechanism at two positions
2.3 Configurations of Micro Displacement Amplification Mechanism
The proposed mechanism can produce three different amplification factors, when used in
three different configurations, depending on application. These configurations have same
geometric properties, only boundary conditions are changed. Three configurations are
discussed below:
27
2.3.1 Configuration 1
When link A is constrained and displacement is applied at link C, the amplified output of
the mechanism can be extracted from both links D & B as shown in Figure 2-2.
Figure 2-2 Schematic diagram of proposed amplification mechanism showing functioning having configuration no. 1
28
2.3.2 Configuration 2
When the link D is constrained, and input displacement is applied to links A & C, an
amplified output can be extracted from the top link B as shown in the Figure 2-3.
Figure 2-3 Schematic diagram of proposed amplification mechanism showing functioning having configuration no. 2
29
2.3.3 Configuration 3
In this configuration, input force applied to links A & C is amplified at links B & D of the
mechanism as shown in Figure 2-4. In this configuration, mechanism is to be supported
using external flexures.
Figure 2-4 Schematic diagram of proposed amplification mechanism showing functioning having configuration no. 3
2.4 Analytical Modeling
2.4.1 Mathematical Model
The proposed mechanism is symmetric, so a quarter model has been used to make
kinematic analytical model as shown in Figure 2-5. The kinematic equations of the micro
displacement amplification mechanism are derived using geometric approach assuming
flexures as rigid bodies.
30
Figure 2-5 Quarter model of displacement amplification mechanism
Uout = L(sinα’ – sinα) (2.1)
α’ = cos-1 �𝒄𝒄𝒄𝒄𝒄𝒄𝒄𝒄 − 𝑼𝑼𝒊𝒊𝒊𝒊𝑳𝑳
� (2.2)
Here Uin and Uout are input and output displacements respectively, L is length of flexure, α
is the angle made by the flexure, α’ is the angle after deflection of flexure that will change
with the applied displacement.
2.4.2 Matrix Method
The displacement amplification mechanism consists of four micro-flexures. These micro-
flexures undergo elastic deformations under application of external forces. Four micro-
flexures act as spring element each having same stiffness, K, as shown in Figure 2-6. The
node point 1 and 2 have two branches in between consisting of two identical springs
31
connected in series. According to series connection rule of springs each branch has a
stiffness of K/2. Hence the total stiffness of the mechanism is found by adding spring
stiffness’s in parallel that comes out to be K.
Kt = K/2 + K/2 = K (2.3)
Figure 2-6 Spring model of displacement amplification mechanism
The stiffness matrix of the micro-flexure is given below:
𝐊𝐊 =
⎣⎢⎢⎢⎡
𝐄𝐄𝐄𝐄𝐄𝐄𝐋𝐋
𝟎𝟎 𝟎𝟎
𝟎𝟎 𝐆𝐆𝐄𝐄𝐄𝐄𝐄𝐄𝟑𝟑
(𝟒𝟒𝐆𝐆𝐋𝐋𝟑𝟑 + 𝛂𝛂𝐬𝐬 𝐄𝐄𝐋𝐋𝐄𝐄𝟐𝟐 ) 𝐄𝐄𝐄𝐄𝐄𝐄𝟑𝟑
𝟔𝟔𝐋𝐋𝟐𝟐
𝟎𝟎 𝐄𝐄𝐄𝐄𝐄𝐄𝟑𝟑
𝟔𝟔𝐋𝐋𝟐𝟐 𝐄𝐄𝐄𝐄𝐄𝐄𝟑𝟑
𝟏𝟏𝟐𝟐𝐋𝐋 ⎦⎥⎥⎥⎤
(2.4)
Here E is the modulus of elasticity, G is the modulus of rigidity, b and t denote the width
and thickness of the micro-beam, L denotes the length of the micro-beam, μ is the Poisson
32
ratio and αs is the shear coefficient of the material. The shear coefficient αs of micro-beam
having rectangular cross section was presented by Cowper (Cowper, 1966; Zhu et al.,
2014) as shown in the equation 2.5.
𝛂𝛂𝐬𝐬 = 𝟏𝟏𝟐𝟐+𝟏𝟏𝟏𝟏𝟏𝟏𝟏𝟏𝟎𝟎(𝟏𝟏+𝟏𝟏)
(2.5)
According to Castigliano’s 1st theorem (Lobontiu, Nicolae, Garcia, 2005), force matrix for
micro-flexure is calculated to be:
�𝑭𝑭𝒙𝒙𝑭𝑭𝒚𝒚𝑴𝑴
�=
⎣⎢⎢⎢⎡
𝑬𝑬𝑬𝑬𝑬𝑬𝑳𝑳
𝟎𝟎 𝟎𝟎
𝟎𝟎 𝑮𝑮𝑬𝑬𝑬𝑬𝑬𝑬𝟑𝟑
(𝟒𝟒𝑮𝑮𝑳𝑳𝟑𝟑 + 𝒄𝒄𝒊𝒊 𝑬𝑬𝑳𝑳𝑬𝑬𝟐𝟐 ) 𝑬𝑬𝑬𝑬𝑬𝑬𝟑𝟑
𝟔𝟔𝑳𝑳𝟐𝟐
𝟎𝟎 𝑬𝑬𝑬𝑬𝑬𝑬𝟑𝟑
𝟔𝟔𝑳𝑳𝟐𝟐 𝑬𝑬𝑬𝑬𝑬𝑬𝟑𝟑
𝟏𝟏𝟐𝟐𝑳𝑳 ⎦⎥⎥⎥⎤
�𝒖𝒖𝒙𝒙𝒖𝒖𝒚𝒚𝜽𝜽𝒙𝒙
� (2.6)
Here Fx and Fy are forces in x and y direction respectively, M is the moment about z-axis,
Ux and Uy are displacements in x and y direction respectively and θx is the angular
displacement.
2.4.3 Strain Energy Approach
Strain energy approach can be used to develop the analytical model of the displacement
amplification mechanism. The load-displacement relationships for the mechanisms were
formulated using Castigliano’s displacement theorem. The total strain energy, Utotal, of the
mechanism is combination of axial, shearing and bending loading.
Utotal = Uaxial +Ubending + Ushear (2.7)
33
Strain energy given for axial, shearing and bending loading is expressed as follows.
Uaxial = ∑ �∫ 𝑭𝑭𝒊𝒊𝒊𝒊𝟐𝟐
𝟐𝟐𝑬𝑬𝟐𝟐𝒅𝒅𝒙𝒙𝒊𝒊
𝒍𝒍𝒊𝒊𝟎𝟎 �𝒊𝒊
𝒊𝒊=𝟏𝟏 (2.8)
Ushear = ∑ �∫ 𝒄𝒄𝑭𝑭𝒊𝒊𝒄𝒄𝟐𝟐
𝟐𝟐𝑮𝑮𝟐𝟐𝒅𝒅𝒙𝒙𝒊𝒊
𝒍𝒍𝒊𝒊𝟎𝟎 �𝒊𝒊
𝒊𝒊=𝟏𝟏 (2.7)
Ubending = ∑ �∫ 𝑴𝑴𝒊𝒊𝟐𝟐
𝟐𝟐𝑬𝑬𝟐𝟐𝒅𝒅𝒙𝒙𝒊𝒊
𝒍𝒍𝒊𝒊𝟎𝟎 �𝒊𝒊
𝒊𝒊=𝟏𝟏 (2.8)
Here Fa, Fs are axial and shearing forces respectively, M denotes bending moment, A is the
cross sectional area and I is moment of inertia.
Fundamental equations of the Castigliano’s displacement theorem are given below.
𝒖𝒖𝒊𝒊𝒙𝒙 = 𝝏𝝏𝑼𝑼𝑬𝑬𝝏𝝏𝑭𝑭𝒊𝒊𝒙𝒙
(2.9)
𝒖𝒖𝒊𝒊𝒚𝒚 = 𝝏𝝏𝑼𝑼𝑬𝑬𝝏𝝏𝑭𝑭𝒊𝒊𝒚𝒚
(2.10)
𝛉𝛉𝒊𝒊𝒙𝒙 = 𝝏𝝏𝑼𝑼𝑬𝑬𝝏𝝏𝑴𝑴𝒊𝒊𝒊𝒊
(2.11)
Here uix , uiy and θix are in-plane translation and rotations at any point on a micro flexure
based compliant mechanism respectively.
The displacement and rotations at each node can be found using equations 2.12 - 2.14.
34
𝒖𝒖𝒊𝒊𝒙𝒙 = 𝝏𝝏𝑼𝑼𝑬𝑬𝝏𝝏𝑭𝑭𝒊𝒊𝒙𝒙
= ∑ �∫ 𝑭𝑭𝒊𝒊𝒊𝒊𝟐𝟐
𝑬𝑬𝟐𝟐𝝏𝝏𝑭𝑭𝒊𝒊𝒊𝒊𝝏𝝏𝑭𝑭𝒊𝒊𝒙𝒙
𝒅𝒅𝒙𝒙𝒊𝒊𝒍𝒍𝒊𝒊
𝟎𝟎 + ∫ 𝒄𝒄𝑭𝑭𝒊𝒊𝒄𝒄𝟐𝟐
𝑮𝑮𝟐𝟐𝝏𝝏𝑭𝑭𝒊𝒊𝒄𝒄𝝏𝝏𝑭𝑭𝒊𝒊𝒙𝒙
𝒅𝒅𝒙𝒙𝒊𝒊𝒍𝒍𝒊𝒊
𝟎𝟎 +𝒊𝒊𝒊𝒊=𝟏𝟏
∫ 𝑴𝑴𝒊𝒊𝟐𝟐
𝑬𝑬𝟐𝟐𝝏𝝏𝑴𝑴𝒊𝒊𝝏𝝏𝑭𝑭𝒊𝒊𝒙𝒙
𝒅𝒅𝒙𝒙𝒊𝒊𝒍𝒍𝒊𝒊
𝟎𝟎 � (2.12)
𝒖𝒖𝒊𝒊𝒚𝒚 = 𝝏𝝏𝑼𝑼𝑬𝑬𝝏𝝏𝑭𝑭𝒊𝒊𝒚𝒚
= ∑ �∫ 𝑭𝑭𝒊𝒊𝒊𝒊𝟐𝟐
𝑬𝑬𝟐𝟐𝝏𝝏𝑭𝑭𝒊𝒊𝒊𝒊𝝏𝝏𝑭𝑭𝒊𝒊𝒚𝒚
𝒅𝒅𝒙𝒙𝒊𝒊𝒍𝒍𝒊𝒊
𝟎𝟎 + ∫ 𝒄𝒄𝑭𝑭𝒊𝒊𝒄𝒄𝟐𝟐
𝑮𝑮𝟐𝟐𝝏𝝏𝑭𝑭𝒊𝒊𝒄𝒄𝝏𝝏𝑭𝑭𝒊𝒊𝒚𝒚
𝒅𝒅𝒙𝒙𝒊𝒊𝒍𝒍𝒊𝒊
𝟎𝟎 +𝒊𝒊𝒊𝒊=𝟏𝟏
∫ 𝑴𝑴𝒊𝒊𝟐𝟐
𝑬𝑬𝟐𝟐𝝏𝝏𝑴𝑴𝒊𝒊𝝏𝝏𝑭𝑭𝒊𝒊𝒚𝒚
𝒅𝒅𝒙𝒙𝒊𝒊𝒍𝒍𝒊𝒊
𝟎𝟎 � (2.13)
𝛉𝛉𝒊𝒊𝒙𝒙 = 𝝏𝝏𝑼𝑼𝑬𝑬𝝏𝝏𝑴𝑴𝒊𝒊𝒊𝒊
= ∑ �∫ 𝑴𝑴𝒊𝒊𝑬𝑬𝟐𝟐
𝝏𝝏𝑴𝑴𝒊𝒊𝝏𝝏𝑴𝑴𝒊𝒊𝒊𝒊
𝒅𝒅𝒙𝒙𝒊𝒊𝒍𝒍𝒊𝒊
𝟎𝟎 �𝒊𝒊𝒊𝒊=𝟏𝟏 (2.14)
The displacement amplification (D.A), that is ratio of output displacement to input
displacement, is given below:
D.A = 𝒖𝒖𝒄𝒄𝒖𝒖𝑬𝑬𝒖𝒖𝒊𝒊𝒊𝒊
(2.15)
2.5 Fabrication of Prototypes
2.5.1 Material Selection
Polysilicon has been used as a structural layer to fabricate the prototypes using
PolyMUMPs process. Polysilicon having Young's modulus E = 130–188GPa, Shear
modulus G = 51–80GPa) is a mechanically stable semiconductor material suitable for use
in the structures of electromechanical devices. Polysilicon is Hookean material. When it is
flexed there is virtually no hysteresis and hence almost no energy dissipation during elastic
35
deformation. Metals having low young’s modulus like gold with E=79GPa, G=27GPa,
aluminum with E=70GPa, G=26GPa, copper with E=110–128GPa, G=48GPa, and silver
with E=83GPa, G=30GPa can also be used as structural material for MEMS fabrication.
Low Young’s modulus makes the structure more compliant and flexible which increases
the deflection. Low young’s modulus materials are mostly ductile that saves them from
undesirable brittle fracture with weak resistance to impact loading. However, endurance
limit of the material decreases with decrease in modulus of elasticity that ultimately affects
the reliability and the factor of safety(Richard G. Budynas, 2011). Polysilicon on the other
hand is very stable in fatigue loadings. Materials with a low Young’s modulus cannot
maintain a linear relationship between applied load and the induced deformations. They
have a low melting temperature that restricts their usage at elevated temperatures. Melting
temperature of silicon is 1400oC that makes it dimensionally stable even at elevated
temperature (Hsu, 2008). Polysilicon is an elastic material with low plasticity or creep
below 800°C.
Use of polyimide with E= 8.0-15.0GPa, G= 1.0-10.0GPa as a structural layer for
fabrication of MEMS devices using Polyimide MEMS Multi-User Process” (PiMMPs) has
been reported(Arevalo et al., 2015; Ilyas, Jaber and Younis, 2016). Low coefficient of
thermal expansion, low film stress, lower cost than metals and semiconductors and high
temperature stability compared to other polymers makes it attractive for MEMS
fabrication(Arevalo et al., 2015). However, it is dimensionally unstable with high moisture
absorption that is, it shows decrease up to 30 % of tensile strength and 50% of tensile
modulus. Its electrical and mechanical properties are also influenced by moisture content.
36
2.5.2 Fabless Strategy
To develop our prototypes, we adopted fabless strategy. This strategy focuses on designing
and characterizing the device using in house resources, while using external processing and
manufacturing facilities. Complete validation of design is very important before sending
the design for production. It is economical to develop design centers, get expertise in design
and use commercial processing and fabrication facilities. Using this approach researchers
can validate the technical viability and productivity of new design in short time.
2.5.3 Proposed MUMPs Process
Prototypes of displacement amplification mechanism were designed and fabricated
according to Polysilicon-Multi User MEMS Processes (PolyMUMPs) for verification of
the design concept. PolyMUMPs is micromachining process available for developing
MEMS devices available from MEMSCAP, USA. The process consists of three layer of
Polysilicon that are micro-machined and used as the structural material for device
development. Sacrificial layer is deposited oxide and for electrical isolation silicon nitride
used (Cowen et al., 2013). It was developed by Berkeley Sensor & Actuator Center. The
basic process includes 8 lithography levels, and 7 physical layers including two mechanical
layers of Polysilicon, one electrical layer of Polysilicon, two sacrificial layers, one
electrical conduction layer and one electrical isolation layer.
37
2.6 Conclusions
In this chapter, design, analytical modeling and prototype development of the mechanism
is presented. Kinematic and force equation are developed using geometric approach, matrix
method and strain energy approach. Moreover, implementation of fabless strategy using
PolyMUMPs process is also discussed. Numerical analysis of the kinematic model
developed is carried out in the next chapter. Based on the numerical results geometric
parameters will finalized keeping in view the amplification factor to be achieved.
38
CHAPTER 3. NUMERICAL ANALYSIS OF MICRO
DISPLACEMENT AMPLIFICATION MECHANISM
3.1 Introduction
In this chapter, parameters of the displacement amplification mechanism are finalized
keeping in view the amplification factor, overall size of the mechanism and PolyMUMPs
process design rules by carrying out a parametric analysis using kinematic equations
developed in previous chapter. Same parameters are used for carrying out numerical
simulations with Direct Stiffness Method (DSM) that is an implementation of FEM.
3.2 Parametric Analysis
3.2.1 Kinematic Analysis
Before carrying out parametric analysis some necessary assumptions are finalized. The
mechanism shown in Figure 3-1 is fixed at link D and input displacement varying from 0.5
μm to 2 μm is applied at links A and C. Design amplification factor of 20 is desired.
Minimum feature size and thickness in PolyMUMPs process is 2 μm, so width is chosen
to be 2 μm and thickness is as per PolyMUMPs fabrication process rule. Effects of change
in length of micro-flexure, from 250 µm to 750 µm and angle of micro-flexure, from 1o to
10 o is discussed in detail in the coming section. Based on these parametric analysis,
dimensions of the proposed amplification mechanism are finalized and accordingly
fabricated.
39
Parametric analysis of micro displacement amplification mechanism has been carried out
using MATLAB programming. Change in amplification factor with changing input
displacement is plotted as shown in Figure 3-2. For input displacement varying from 0.5
μm to 2 μm, an amplification factor decreases from 26.75 to 15.50. Our point of focus is 1
μm input displacement, at which we are getting an amplification factor of 18.75. Results
show that the amplification factor decreases with increasing input displacement, that
depicts that the amplification factor is limited to a specific range of input displacement
beyond which increasing input displacement will decrease amplification factor.
Figure 3-1 Schematic diagram of the mechanism
40
Figure 3-2 Plot of Input displacement vs. Amplification Factor showing a decrease in amplification factor from 26.75 to 15.50
To carryout parametric analysis of the proposed mechanism, one parameter is varied
keeping all others parameters constant. First of all, angle is varied from 1o to 10o, input
displacement is plotted against amplification factor as shown in Figure 3-3. The results
show that with increasing angle of micro-flexure, amplification factor decreases and
becomes constant at higher angles with increasing input displacement.
41
Figure 3-3 Parametric analysis showing change in amplification factor with varying angle made by micro-flexure
Length of micro-flexure is varied from 250 μm to 750 μm. Input displacement vs.
amplification factor plot for varying micro-flexure length is shown in Figure 3-4. With
increasing length of micro-flexure, amplification factor increases but decreases with
increasing input displacement. Parametric analysis further shows a significant change in
amplification factor with increasing length from 250 μm to 600 μm but after 600 μm the
change in amplification factor becomes small restricting the design to micro-flexure length
values within certain limit.
42
Figure 3-4 Parametric analyses showing significant increase in amplification factor with increasing length from 250 μm to 600 μm but after 600 μm the change in
amplification factor becomes insignificant
Results of parametric analysis show that the amplification factor is limited to certain range
of length and angle made by micro flexure. Displacement amplification depends on the
elastic deformation of flexures that amplify the input displacement. This elastic
deformation is limited depending on the material properties and dimensions of the structure
that cannot exceed beyond a critical range. So, the amplification is limited to range of
lengths and angles.
3.2.2 Kinetic Analysis
An optimal value of force varying from 1600 µN to 2000 µN has been taken from numerous
finite element simulations done in IntelliSuite® assuming that these magnitude of forces
will be enough to produce sufficient input displacement. Output forces produced in y and
z direction is potted against input displacement as shown in the Figures 3-5(a & b)
43
respectively. The graphs show that the output force along y axis increases and along z-axis
decreases.
(a)
(b)
Figure 3-5 Plot showing linear relationship between output force along (a) Y-axis (b) Z-axis and input displacement produced by application of force to the side masses
44
Parametric analysis has been carried out to investigate the effect of varying design
parameters on output force. Length of the micro-flexure is varied from 250 μm to 750 μm,
with input displacement of 2 µm, and plotted against the output force along Y-axis as
shown in Figure 3-6(a). With increasing length of micro-flexure output force decreases.
Angle of the micro-flexure is varied from 1o to 10o and plotted against the output force
along Y-axis as shown below in Figure 3-6(b). The plot shows a decrease in output force
with increasing angle.
Based on the parametric analysis, overall size of the mechanism and PolyMUMPs process
following parameters are finalized as given in the Table 3-1. Same parameters have been
used for calculating amplification factor through DSM, IntelliSuite® simulations and
fabrication.
Table 3-1 Geometric parameters and material properties of the designed mechanism
Parameter Value
Elastic modulus (N/m2 ) 160 x 109
Shear modulus (N/m2 ) 65.25 x 109
Length of micro-flexure (μm) 250
Angle made by micro-flexure (Degrees) 3o
Width of micro-flexure (μm) 2
Thickness of micro-flexure (μm) 2
Cross sectional area A(µm2) 4
Moment of inertia (µm4) 1.33
Overall mechanism size (μm) 600x100x2
45
(a)
(b)
Figure 3-6 (a) Plot showing a decrease in output force with increasing micro-flexure length (b)Plot showing a decrease in output force with increasing micro-flexure
angle
2 3 4 5 6 7 8x 10-4
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2x 10-5 KINETICS(varying length)
LENGTH OF FLEXURE(meters)
OU
TPU
T FO
RC
E(N
ewto
ns)
1 2 3 4 5 6 7 8 9 100.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2 x 10-3 KINETICS(VARYING ANGLE)
ANGLE OF FLEXURE WITH HORIZONTAL(degrees)
OU
TPU
T FO
RC
E(N
ewto
ns)
46
3.3 Finite Element Analysis using Direct Stiffness Method
FEM is a numerical method for solving engineering problems having complicated
geometries, loadings, and material properties. The finite element formulation of the
problem results in a system of simultaneous algebraic equations for solution, rather than
requiring the solution of differential equations (Logan et al., 2007). These numerical
methods yield approximate values of the unknowns at discrete numbers of points in the
continuum. In FEM, equations are formulated for each finite element. These equations are
then combined to get the vector matrix form of equations which are then solved
numerically using the techniques of numerical linear algebra.
Beam element, as shown in Figure 3-7, is used for finite element modeling of the designed
mechanism. A general transformed global stiffness matrix for a beam element that includes
axial force, shear force, and bending moment effects is given by the equation 3.1 (Logan
et al., 2007). As global stiffness matrix is being used so the transformation from link to
link has already been implemented in the matrix. The element stiffness is functions of
Young’s Modulus, area, length, moment of inertia and the angle of orientation as shown
below
47
Figure 3-7 Schematic diagram of the beam element
(3.1)
The analysis of the mechanism, which is a rigid plane frame, is undertaken by using the
above stiffness matrix. The mechanism is a rigid plane frame consisting of a chain of beam
elements rigidly connected to each other. Joints are transmitting moments and forces from
one element to another. Applied loads and centroids share a common plane (x-y plane)
having moment continuity at rigid joints. To get numerical solution, code has been written
in MATLAB.
48
3.3.1 Disintegration of Designed Mechanism
The designed mechanism is disintegrated into seven elements having eight nodes as shown
in Figure 3-8. Node 1 and node 8 are fixed. Equations are formulated for each finite element
which are then assembled to obtain the solution of the whole mechanism. All calculations,
assemblage, application of boundary conditions and finding end solution is done using
MATLAB. The solution provides unknown displacements and forces at each node. A
positive horizontal distributed force of magnitude 2000 µN is applied to elements 2 and
negative horizontal distributed force of magnitude 2000 µN is applied at element 6. An
optimal value of 2000 µN has been taken from numerous finite element simulations done
in IntelliSuite® assuming that 2000 µN will be enough to produce significant input
displacement. With application of this force, input displacement is produced which is
amplified at the output element 4.
Figure 3-8 Schematic diagram of the disintegrated mechanism
3.3.2 Element Stiffness Matrices
Global stiffness matrix for each element is found using matrix shown in matrix 3.1 having
E = 160 × 109 N/m2, A= 4 µm2 and I = 1.33 µm4 for all elements.
49
3.3.2.1 Element 1
Angle between global coordinate axis, x, and local coordinate axis, x', is defined as θ . It is
assumed that x' is directed from node i to node i+1. For this element θ = 177o counter
clockwise positive. Using equation 3.1, the element 1 stiffness matrix is:
d1x d1y θ1 d2x d2 θ2
1276.28 -68.89 -2.76E-07 -1276.28 68.89 -2.76E-07
-68.89 3.73 -5.11E-06 68.89 -3.73 -5.11E-06
K(1) = -2.76E-07 -5.11E-06 1.71E-09 2.76E-07 5.11E-06 8.53E-10 N/m
-1276.28 68.89 2.76E-07 1276.28 -68.89 2.76E-07
68.89 -3.73 5.11E-06 -68.89 3.73 -5.11E-06
-2.76E-07 -5.11E-06 8.53E-10 2.76E-07 -5.11E-06 1.71E-09
50
3.3.2.2 Element 2
For element 2, θ = 90o and the element stiffness matrix is:
d2x d2y θ2 d3x d3y θ3
9.77 7.95 -0.0003 -9.77 -7.95 -0.0003
7.95 9999.99 2.49E-07 -7.95 -9999.99 2.49E-07
K(2) = -0.0003 2.49E-07 1.33E-08 0.0003 -2.49E-07 6.67E-09 N/m
-9.77 -7.95 0.0003 9.77 7.95 0.0003
-7.95 -9999.99 -2.49E-07 7.95 9999.99 2.49E-07
-0.0003 2.49E-07 6.67E-09 0.0003 2.49E-07 1.33E-08
3.3.2.3 Element 3
For element 3, θ = 3o. Using equation 3.1, the element 3 stiffness matrix is:
d3x d3y θ3 d4x d4y θ4
1276.49 66.86 -2.68E-07 -1276.49 -66.86 -2.68E-07
66.86 3.52 5.11E-06 -66.86 -3.52 5.11E-06
K(3) = -2.68E-07 5.11E-06 1.71E-09 2.68E-07 -5.11E-06 8.53E-10 N/m
-1276.49 -66.86 2.68E-07 1276.49 66.86 2.68E-07
-66.86 -3.52 -5.11E-06 66.86 3.52 5.11E-06
-2.68E-07 5.11E-06 8.53E-10 2.68E-07 5.11E-06 1.71E-09
51
3.3.2.4 Element 4
For element 4, θ = 0o.The element stiffness matrix for element 4 is:
d4x d4y θ4 d5x d5y θ5
10000 0 0 -10000 0 0
0 9.76 0.0003 0 -9.76 0.0003
K(4) = 0 0.0003 1.33E-08 0 -0.0003 6.67E-09 N/m
-10000 0 0 10000 0 0
0 -9.76 -0.0003 0 9.76 0.0003
0 0.0031 6.67E-09 0 0.0003 1.33E-08
3.3.2.5 Element 5
For element 5, θ = 3o.The element stiffness matrix for element 5 is:
d5x d5y θ5 d6x d6y θ6
1276.05 -70.91 2.84E-07 -1276.05 70.91 2.84E-07
-70.91 3.96 5.11E-06 70.91 -3.96 5.11E-06
K(5) = 2.84E-07 5.11E-06 1.71E-09 -2.84E-07 -5.11E-06 8.53E-10 N/m
-1276.05 70.91 -2.84E-07 1276.05 -70.91 -2.84E-07
70.91 -3.96 -5.11E-06 -70.91 3.96 5.11E-06
2.84E-07 5.11E-06 8.53E-10 -2.84E-07 5.11E-06 1.71E-09
52
3.3.2.6 Element 6
For element 6, θ = 270o and stiffness matrix for element 6 as:
d6x d6y θ6 d7x d7y θ7
9.82 23.86 0.0003 -9.82 -23.86 0.0003
23.86 9999.94 -7.47E-07 -23.86 -9999.94 -7.47E-07
K(6) = 0.0003 -7.47E-07 1.33E-08 -0.0003 7.47E-07 6.67E-09 N/m
-9.82 -23.86 -0.0003 9.82 23.86 -0.0003
-23.86 -9999.94 7.47E-07 23.86 9999.94 -7.47E-07
0.0003 -7.47E-07 6.67E-09 -0.0003 -7.47E-07 1.33E-08
3.3.2.7 Element 7
For element 7 θ = 183o. Using equation 3.1, element 7 stiffness matrix is:
d7x d7y θ7 d8x d8y θ8
1276.70 64.83 2.60E-07 -1276.70 -64.83 2.60E-07
64.83 3.31 -5.11E-06 -64.83 -3.31 -5.11E-06
K(7) = 2.60E-07 -5.11E-06 1.71E-09 -2.60E-07 5.11E-06 8.53E-10 N/m
-1276.70 -64.83 -2.60E-07 1276.70 64.83 -2.60E-07
-64.83 -3.31 5.11E-06 64.83 3.31 -5.11E-06
2.60E-07 -5.11E-06 8.53E-10 -2.60E-07 -5.11E-06 1.71E-09
53
3.3.3 Element External Force Matrices
External local force vector is found for all elements. A positive horizontal distributed force
of magnitude 2000 µN is applied to elements 2 and negative horizontal distributed force of
magnitude 2000 µN is applied at element 6.
3.3.3.1 External Force Matrix of Element 1
External local force matrix 𝑓𝑓′(1) is found by transformation of distributed loads to nodal
loads. For element 1, local forces and moments at node 1 are f1x = f1y = m1 =0 and at node
2 f2x = 0, f2y = F×L/2, m2 = F×L2/12. For F = 2000 µN, external local force matrix is given
below:
�𝒇𝒇′(𝟏𝟏)�=
⎩⎪⎪⎨
⎪⎪⎧
𝒇𝒇𝟏𝟏𝒙𝒙′
𝒇𝒇𝟏𝟏𝒚𝒚′
𝒎𝒎𝟏𝟏′
𝒇𝒇𝟐𝟐𝒙𝒙′
𝒇𝒇𝟐𝟐𝒚𝒚′
𝒎𝒎𝟐𝟐′ ⎭
⎪⎪⎬
⎪⎪⎫
=
⎩⎪⎨
⎪⎧
𝟎𝟎𝟎𝟎𝟎𝟎𝟎𝟎
𝟔𝟔. 𝟒𝟒𝟎𝟎𝐄𝐄 − 𝟓𝟓𝟔𝟔. 𝟖𝟖𝟑𝟑𝐄𝐄 − 𝟏𝟏𝟎𝟎⎭
⎪⎬
⎪⎫
N
To find force matrix,𝑓𝑓(1), external local load matrix is to be multiplied with transformation
matrix. Global element force matrix is found by using the relation given below.
�𝒇𝒇(𝟏𝟏)� = [𝑻𝑻]�𝒇𝒇′(𝟏𝟏)�
54
�𝒇𝒇(𝟏𝟏)� =
⎩⎪⎨
⎪⎧
𝒇𝒇𝟏𝟏𝒙𝒙𝒇𝒇𝟏𝟏𝒚𝒚𝒎𝒎𝟏𝟏𝒇𝒇𝟐𝟐𝒙𝒙𝒇𝒇𝟐𝟐𝒚𝒚𝒎𝒎𝟐𝟐⎭
⎪⎬
⎪⎫
⎣⎢⎢⎢⎢⎡−𝟎𝟎. 𝟗𝟗𝟗𝟗𝟖𝟖 −𝟎𝟎. 𝟎𝟎𝟓𝟓𝟑𝟑 𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎𝟎𝟎. 𝟎𝟎𝟓𝟓𝟑𝟑 −𝟎𝟎. 𝟗𝟗𝟗𝟗𝟖𝟖 𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎
𝟎𝟎 𝟎𝟎 𝟏𝟏 𝟎𝟎 𝟎𝟎 𝟎𝟎𝟎𝟎 𝟎𝟎 𝟎𝟎 −𝟎𝟎. 𝟗𝟗𝟗𝟗𝟖𝟖 −𝟎𝟎. 𝟎𝟎𝟓𝟓𝟑𝟑 𝟎𝟎𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎. 𝟎𝟎𝟓𝟓𝟑𝟑 −𝟎𝟎. 𝟗𝟗𝟗𝟗𝟖𝟖 𝟎𝟎𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟏𝟏⎦
⎥⎥⎥⎥⎤
⎩⎪⎨
⎪⎧
𝟎𝟎𝟎𝟎𝟎𝟎𝟎𝟎
𝟔𝟔. 𝟒𝟒𝟎𝟎𝐄𝐄 − 𝟎𝟎𝟓𝟓𝟔𝟔. 𝟖𝟖𝟑𝟑𝐄𝐄 − 𝟏𝟏𝟎𝟎⎭
⎪⎬
⎪⎫
=
⎩⎪⎨
⎪⎧
𝟎𝟎𝟎𝟎𝟎𝟎
−𝟑𝟑. 𝟒𝟒𝟓𝟓𝐄𝐄 − 𝟎𝟎𝟑𝟑−𝟔𝟔. 𝟑𝟑𝟗𝟗𝐄𝐄 − 𝟎𝟎𝟓𝟓𝟔𝟔. 𝟖𝟖𝟑𝟑𝐄𝐄 − 𝟏𝟏𝟎𝟎 ⎭
⎪⎬
⎪⎫
N
3.3.3.2 External Force Matrix of Element 2
For element 2, local forces and moments at node 2 are f2x = 0, f2y = F×L/2, m2 = F×L2/12
and at node 3 are f3x = 0, f3y = F×L/2, m3 = F×L2/12. External Local force matrix, 𝑓𝑓′(2), is
given below:
�𝒇𝒇′(𝟐𝟐)�=
⎩⎪⎪⎨
⎪⎪⎧
𝒇𝒇𝟐𝟐𝒙𝒙′
𝒇𝒇𝟐𝟐𝒚𝒚′
𝒎𝒎𝟐𝟐′
𝒇𝒇𝟑𝟑𝒙𝒙′
𝒇𝒇𝟑𝟑𝒚𝒚′
𝒎𝒎𝟑𝟑′ ⎭
⎪⎪⎬
⎪⎪⎫
=
⎩⎪⎨
⎪⎧
𝟎𝟎𝟔𝟔. 𝟒𝟒𝟎𝟎𝐄𝐄 − 𝟎𝟎𝟓𝟓𝟔𝟔. 𝟖𝟖𝟑𝟑𝐄𝐄 − 𝟏𝟏𝟎𝟎
𝟎𝟎𝟔𝟔. 𝟒𝟒𝟎𝟎𝐄𝐄 − 𝟎𝟎𝟓𝟓𝟔𝟔. 𝟖𝟖𝟑𝟑𝐄𝐄 − 𝟏𝟏𝟎𝟎⎭
⎪⎬
⎪⎫
N
To find global force matrix external local load matrix is to be multiplied with
transformation matrix. The global force matrix, 𝑓𝑓(2), is found by using the relation given
below:
�𝒇𝒇(𝟐𝟐)� = [𝑻𝑻]�𝒇𝒇′(𝟐𝟐)�
55
�𝒇𝒇(𝟐𝟐)� =
⎩⎪⎨
⎪⎧
𝒇𝒇𝟐𝟐𝒙𝒙𝒇𝒇𝟐𝟐𝒚𝒚𝒎𝒎𝟐𝟐𝒇𝒇𝟑𝟑𝒙𝒙𝒇𝒇𝟑𝟑𝒚𝒚𝒎𝒎𝟑𝟑⎭
⎪⎬
⎪⎫
=
⎣⎢⎢⎢⎢⎡−𝟎𝟎. 𝟎𝟎𝟓𝟓𝟏𝟏𝟓𝟓𝟏𝟏 −𝟎𝟎. 𝟗𝟗𝟗𝟗𝟖𝟖𝟔𝟔𝟗𝟗 𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎𝟎𝟎. 𝟗𝟗𝟗𝟗𝟖𝟖𝟔𝟔𝟗𝟗 −𝟎𝟎. 𝟎𝟎𝟓𝟓𝟏𝟏𝟓𝟓𝟏𝟏 𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎
𝟎𝟎 𝟎𝟎 𝟏𝟏 𝟎𝟎 𝟎𝟎 𝟎𝟎𝟎𝟎 𝟎𝟎 𝟎𝟎 −𝟎𝟎. 𝟎𝟎𝟓𝟓𝟏𝟏𝟓𝟓𝟏𝟏 −𝟎𝟎. 𝟗𝟗𝟗𝟗𝟖𝟖𝟔𝟔𝟗𝟗 𝟎𝟎𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎. 𝟗𝟗𝟗𝟗𝟖𝟖𝟔𝟔𝟗𝟗 −𝟎𝟎. 𝟎𝟎𝟓𝟓𝟏𝟏𝟓𝟓𝟏𝟏 𝟎𝟎𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟏𝟏⎦
⎥⎥⎥⎥⎤
⎩⎪⎨
⎪⎧
𝟎𝟎𝟔𝟔. 𝟒𝟒𝟎𝟎𝐄𝐄 − 𝟎𝟎𝟓𝟓𝟔𝟔. 𝟖𝟖𝟑𝟑𝐄𝐄 − 𝟏𝟏𝟎𝟎
𝟎𝟎𝟔𝟔. 𝟒𝟒𝟎𝟎𝐄𝐄 − 𝟎𝟎𝟓𝟓𝟔𝟔. 𝟖𝟖𝟑𝟑𝐄𝐄 − 𝟏𝟏𝟎𝟎⎭
⎪⎬
⎪⎫
=
⎩⎪⎨
⎪⎧
−𝟔𝟔. 𝟑𝟑𝟗𝟗𝐄𝐄 − 𝟎𝟎𝟓𝟓−𝟑𝟑. 𝟑𝟑𝟎𝟎𝐄𝐄 − 𝟎𝟎𝟔𝟔𝟔𝟔. 𝟖𝟖𝟑𝟑𝐄𝐄 − 𝟏𝟏𝟎𝟎
−𝟔𝟔. 𝟑𝟑𝟗𝟗𝐄𝐄 − 𝟎𝟎𝟓𝟓−𝟑𝟑. 𝟑𝟑𝟎𝟎𝐄𝐄 − 𝟎𝟎𝟔𝟔𝟔𝟔. 𝟖𝟖𝟑𝟑𝐄𝐄 − 𝟏𝟏𝟎𝟎 ⎭
⎪⎬
⎪⎫
N
3.3.3.3 External Force Matrix of Element 3
For element 3 local forces and moments at node 3 are f3x = 0, f3y = F×L/2, m3 = F×L2/12
and node 4 are f4x = f4y = m4 = 0. External Local force matrix is given below:
�𝒇𝒇′(𝟑𝟑)�=
⎩⎪⎪⎨
⎪⎪⎧
𝒇𝒇𝟑𝟑𝒙𝒙′
𝒇𝒇𝟑𝟑𝒚𝒚′
𝒎𝒎𝟑𝟑′
𝒇𝒇𝟒𝟒𝒙𝒙′
𝒇𝒇𝟒𝟒𝒚𝒚′
𝒎𝒎𝟒𝟒′ ⎭
⎪⎪⎬
⎪⎪⎫
=
⎩⎪⎨
⎪⎧
𝟎𝟎𝟔𝟔. 𝟒𝟒𝟎𝟎𝐄𝐄 − 𝟎𝟎𝟓𝟓𝟔𝟔. 𝟖𝟖𝟑𝟑𝐄𝐄 − 𝟏𝟏𝟎𝟎
𝟎𝟎𝟎𝟎𝟎𝟎 ⎭
⎪⎬
⎪⎫
N
The force matrix is found by using the relation given below:
�𝒇𝒇(𝟑𝟑)� = [𝑻𝑻]�𝒇𝒇′(𝟑𝟑)�
56
�𝒇𝒇(𝟑𝟑)� =
⎩⎪⎨
⎪⎧
𝒇𝒇𝟑𝟑𝒙𝒙𝒇𝒇𝟑𝟑𝒚𝒚𝒎𝒎𝟑𝟑𝒇𝒇𝟒𝟒𝒙𝒙𝒇𝒇𝟒𝟒𝒚𝒚𝒎𝒎𝟒𝟒⎭
⎪⎬
⎪⎫
=
⎣⎢⎢⎢⎢⎡−𝟎𝟎. 𝟎𝟎𝟓𝟓𝟏𝟏𝟓𝟓𝟏𝟏 −𝟎𝟎. 𝟗𝟗𝟗𝟗𝟖𝟖𝟔𝟔𝟗𝟗 𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎𝟎𝟎. 𝟗𝟗𝟗𝟗𝟖𝟖𝟔𝟔𝟗𝟗 −𝟎𝟎. 𝟎𝟎𝟓𝟓𝟏𝟏𝟓𝟓𝟏𝟏 𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎
𝟎𝟎 𝟎𝟎 𝟏𝟏 𝟎𝟎 𝟎𝟎 𝟎𝟎𝟎𝟎 𝟎𝟎 𝟎𝟎 −𝟎𝟎. 𝟎𝟎𝟓𝟓𝟏𝟏𝟓𝟓𝟏𝟏 −𝟎𝟎. 𝟗𝟗𝟗𝟗𝟖𝟖𝟔𝟔𝟗𝟗 𝟎𝟎𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎. 𝟗𝟗𝟗𝟗𝟖𝟖𝟔𝟔𝟗𝟗 −𝟎𝟎. 𝟎𝟎𝟓𝟓𝟏𝟏𝟓𝟓𝟏𝟏 𝟎𝟎𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟏𝟏⎦
⎥⎥⎥⎥⎤
⎩⎪⎨
⎪⎧
𝟎𝟎𝟔𝟔. 𝟒𝟒𝟎𝟎𝐄𝐄 − 𝟎𝟎𝟓𝟓𝟔𝟔. 𝟖𝟖𝟑𝟑𝐄𝐄 − 𝟏𝟏𝟎𝟎
𝟎𝟎𝟎𝟎𝟎𝟎 ⎭
⎪⎬
⎪⎫
=
⎩⎪⎨
⎪⎧
−𝟔𝟔. 𝟑𝟑𝟗𝟗𝐄𝐄 − 𝟎𝟎𝟓𝟓−𝟑𝟑. 𝟑𝟑𝟎𝟎𝐄𝐄 − 𝟎𝟎𝟔𝟔𝟔𝟔. 𝟖𝟖𝟑𝟑𝐄𝐄 − 𝟏𝟏𝟎𝟎
𝟎𝟎𝟎𝟎𝟎𝟎 ⎭
⎪⎬
⎪⎫
N
3.3.3.4 External Force Matrix of Element 4
For element 4 local forces and moments at node 4 are f4x = f4y = m4 = 0 and node 5 are f5x
= f5y = m5 = 0. External Local force matrix is given below. Since it’s a zero matrix so no
need to do transformations and external local and global force matrices will be same.
�𝒇𝒇(𝟒𝟒)� = �𝒇𝒇′(𝟒𝟒)�=
⎩⎪⎪⎨
⎪⎪⎧
𝒇𝒇𝟒𝟒𝒙𝒙′
𝒇𝒇𝟒𝟒𝒚𝒚′
𝒎𝒎𝟒𝟒′
𝒇𝒇𝟓𝟓𝒙𝒙′
𝒇𝒇𝟓𝟓𝒚𝒚′
𝒎𝒎𝟓𝟓′ ⎭
⎪⎪⎬
⎪⎪⎫
=
⎩⎪⎨
⎪⎧
𝟎𝟎𝟎𝟎𝟎𝟎𝟎𝟎𝟎𝟎𝟎𝟎⎭
⎪⎬
⎪⎫
N
3.3.3.5 External Force Matrix of Element 5
For element 5, local forces and moments at node 5 are f5x = f5y = m5 = 0 and node 6 are f6x
= 0, f6y = F×L/2, m6 = F×L2/12. External local force matrix is given below:
57
�𝒇𝒇′(𝟓𝟓)�=
⎩⎪⎪⎨
⎪⎪⎧
𝒇𝒇𝟓𝟓𝒙𝒙′
𝒇𝒇𝟓𝟓𝒚𝒚′
𝒎𝒎𝟓𝟓′
𝒇𝒇𝟔𝟔𝒙𝒙′
𝒇𝒇𝟔𝟔𝒚𝒚′
𝒎𝒎𝟔𝟔′ ⎭
⎪⎪⎬
⎪⎪⎫
=
⎩⎪⎨
⎪⎧
𝟎𝟎𝟎𝟎𝟎𝟎𝟎𝟎
−𝟔𝟔. 𝟒𝟒𝟎𝟎𝐄𝐄 − 𝟎𝟎𝟓𝟓−𝟔𝟔. 𝟖𝟖𝟑𝟑𝐄𝐄 − 𝟏𝟏𝟎𝟎⎭
⎪⎬
⎪⎫
N
The force matrix is found by using the relation given below:
�𝒇𝒇(𝟓𝟓)� = [𝑻𝑻]�𝒇𝒇′(𝟓𝟓)�
�𝒇𝒇(𝟓𝟓)� =
⎩⎪⎨
⎪⎧
𝒇𝒇𝟓𝟓𝒙𝒙𝒇𝒇𝟓𝟓𝒚𝒚𝒎𝒎𝟓𝟓𝒇𝒇𝟔𝟔𝒙𝒙𝒇𝒇𝟔𝟔𝒚𝒚𝒎𝒎𝟔𝟔⎭
⎪⎬
⎪⎫
=
⎣⎢⎢⎢⎢⎡−𝟎𝟎. 𝟗𝟗𝟗𝟗𝟖𝟖 −𝟎𝟎. 𝟎𝟎𝟓𝟓𝟑𝟑 𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎𝟎𝟎. 𝟎𝟎𝟓𝟓𝟑𝟑 −𝟎𝟎. 𝟗𝟗𝟗𝟗𝟖𝟖 𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎
𝟎𝟎 𝟎𝟎 𝟏𝟏 𝟎𝟎 𝟎𝟎 𝟎𝟎𝟎𝟎 𝟎𝟎 𝟎𝟎 −𝟎𝟎. 𝟗𝟗𝟗𝟗𝟖𝟖 −𝟎𝟎. 𝟎𝟎𝟓𝟓𝟑𝟑 𝟎𝟎𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎. 𝟎𝟎𝟓𝟓𝟑𝟑 −𝟎𝟎. 𝟗𝟗𝟗𝟗𝟖𝟖 𝟎𝟎𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟏𝟏⎦
⎥⎥⎥⎥⎤
⎩⎪⎨
⎪⎧
𝟎𝟎𝟎𝟎𝟎𝟎𝟎𝟎
−𝟔𝟔. 𝟒𝟒𝟎𝟎𝐄𝐄 − 𝟎𝟎𝟓𝟓−𝟔𝟔. 𝟖𝟖𝟑𝟑𝐄𝐄 − 𝟏𝟏𝟎𝟎⎭
⎪⎬
⎪⎫
=
⎩⎪⎨
⎪⎧
𝟎𝟎𝟎𝟎𝟎𝟎
𝟑𝟑. 𝟒𝟒𝟓𝟓𝑬𝑬 − 𝟎𝟎𝟔𝟔𝟔𝟔. 𝟑𝟑𝟗𝟗𝑬𝑬 − 𝟎𝟎𝟓𝟓
−𝟔𝟔. 𝟖𝟖𝟑𝟑𝐄𝐄 − 𝟏𝟏𝟎𝟎⎭⎪⎬
⎪⎫
N
3.3.3.6 External Force Matrix of Element 6
For element 6 local forces and moments at node 6 are f6x = 0, f6y = F×L/2, m6 = F×L2/12
and node 7 are f7x = 0, f7y = F×L/2, m7 = F×L2/12. External Local force matrix is given
below:
58
�𝒇𝒇′(𝟔𝟔)�=
⎩⎪⎪⎨
⎪⎪⎧
𝒇𝒇𝟔𝟔𝒙𝒙′
𝒇𝒇𝟔𝟔𝒚𝒚′
𝒎𝒎𝟔𝟔′
𝒇𝒇𝟗𝟗𝒙𝒙′
𝒇𝒇𝟗𝟗𝒚𝒚′
𝒎𝒎𝟗𝟗′ ⎭
⎪⎪⎬
⎪⎪⎫
=
⎩⎪⎨
⎪⎧
𝟎𝟎𝟔𝟔. 𝟒𝟒𝟎𝟎𝐄𝐄 − 𝟎𝟎𝟓𝟓𝟔𝟔. 𝟖𝟖𝟑𝟑𝐄𝐄 − 𝟏𝟏𝟎𝟎
𝟎𝟎𝟔𝟔. 𝟒𝟒𝟎𝟎𝐄𝐄 − 𝟎𝟎𝟓𝟓𝟔𝟔. 𝟖𝟖𝟑𝟑𝐄𝐄 − 𝟏𝟏𝟎𝟎⎭
⎪⎬
⎪⎫
N
The force matrix is found by using the relation given below:
�𝒇𝒇(𝟔𝟔)� = [𝑻𝑻]�𝒇𝒇′(𝟔𝟔)�
�𝒇𝒇(𝟔𝟔)� =
⎩⎪⎨
⎪⎧
𝒇𝒇𝟔𝟔𝒙𝒙𝒇𝒇𝟔𝟔𝒚𝒚𝒎𝒎𝟔𝟔𝒇𝒇𝟗𝟗𝒙𝒙𝒇𝒇𝟗𝟗𝒚𝒚𝒎𝒎𝟗𝟗⎭
⎪⎬
⎪⎫
=
⎣⎢⎢⎢⎢⎡−𝟎𝟎. 𝟗𝟗𝟗𝟗𝟖𝟖 −𝟎𝟎. 𝟎𝟎𝟓𝟓𝟑𝟑 𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎𝟎𝟎. 𝟎𝟎𝟓𝟓𝟑𝟑 −𝟎𝟎. 𝟗𝟗𝟗𝟗𝟖𝟖 𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎
𝟎𝟎 𝟎𝟎 𝟏𝟏 𝟎𝟎 𝟎𝟎 𝟎𝟎𝟎𝟎 𝟎𝟎 𝟎𝟎 −𝟎𝟎. 𝟗𝟗𝟗𝟗𝟖𝟖 −𝟎𝟎. 𝟎𝟎𝟓𝟓𝟑𝟑 𝟎𝟎𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎. 𝟎𝟎𝟓𝟓𝟑𝟑 −𝟎𝟎. 𝟗𝟗𝟗𝟗𝟖𝟖 𝟎𝟎𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟏𝟏⎦
⎥⎥⎥⎥⎤
⎩⎪⎨
⎪⎧
𝟎𝟎𝟔𝟔. 𝟒𝟒𝟎𝟎𝐄𝐄 − 𝟎𝟎𝟓𝟓𝟔𝟔. 𝟖𝟖𝟑𝟑𝐄𝐄 − 𝟏𝟏𝟎𝟎
𝟎𝟎𝟔𝟔. 𝟒𝟒𝟎𝟎𝐄𝐄 − 𝟎𝟎𝟓𝟓𝟔𝟔. 𝟖𝟖𝟑𝟑𝐄𝐄 − 𝟏𝟏𝟎𝟎⎭
⎪⎬
⎪⎫
=
⎩⎪⎨
⎪⎧
𝟔𝟔. 𝟑𝟑𝟗𝟗𝐄𝐄 − 𝟎𝟎𝟓𝟓𝟑𝟑. 𝟑𝟑𝟎𝟎𝐄𝐄 − 𝟎𝟎𝟔𝟔
−𝟔𝟔. 𝟖𝟖𝟑𝟑𝐄𝐄 − 𝟏𝟏𝟎𝟎𝟔𝟔. 𝟑𝟑𝟗𝟗𝐄𝐄 − 𝟎𝟎𝟓𝟓𝟑𝟑. 𝟑𝟑𝟎𝟎𝐄𝐄 − 𝟎𝟎𝟔𝟔
−𝟔𝟔. 𝟖𝟖𝟑𝟑𝐄𝐄 − 𝟏𝟏𝟎𝟎⎭⎪⎬
⎪⎫
N
3.3.3.7 External Force Matrix of Element 7
The element 7 local forces and moments at node 7 are f7x = 0, f7y = F×L/2, m7 = F×L2/12
and node 8 are f8x = f8y= m8 = 0. External Local force matrix is given below:
�𝒇𝒇′(𝟔𝟔)�=
⎩⎪⎪⎨
⎪⎪⎧
𝒇𝒇𝟗𝟗𝒙𝒙′
𝒇𝒇𝟗𝟗𝒚𝒚′
𝒎𝒎𝟗𝟗′
𝒇𝒇𝟖𝟖𝒙𝒙′
𝒇𝒇𝟖𝟖𝒚𝒚′
𝒎𝒎𝟖𝟖′ ⎭
⎪⎪⎬
⎪⎪⎫
=
⎩⎪⎨
⎪⎧
𝟎𝟎−𝟓𝟓. 𝟎𝟎𝟎𝟎𝐄𝐄 − 𝟎𝟎𝟒𝟒−𝟒𝟒. 𝟏𝟏𝟗𝟗𝐄𝐄 − 𝟎𝟎𝟖𝟖
𝟎𝟎𝟎𝟎𝟎𝟎 ⎭
⎪⎬
⎪⎫
N
59
The force matrix is found by using the relation given below:
�𝒇𝒇(𝟗𝟗)� = [𝑻𝑻]�𝒇𝒇′(𝟗𝟗)�
�𝒇𝒇(𝟗𝟗)� =
⎩⎪⎨
⎪⎧
𝒇𝒇𝟗𝟗𝒙𝒙𝒇𝒇𝟗𝟗𝒚𝒚𝒎𝒎𝟗𝟗𝒇𝒇𝟖𝟖𝒙𝒙𝒇𝒇𝟖𝟖𝒚𝒚𝒎𝒎𝟖𝟖⎭
⎪⎬
⎪⎫
=
⎣⎢⎢⎢⎢⎡−𝟎𝟎. 𝟎𝟎𝟓𝟓𝟏𝟏𝟓𝟓𝟏𝟏 −𝟎𝟎. 𝟗𝟗𝟗𝟗𝟖𝟖𝟔𝟔𝟗𝟗 𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎𝟎𝟎. 𝟗𝟗𝟗𝟗𝟖𝟖𝟔𝟔𝟗𝟗 −𝟎𝟎. 𝟎𝟎𝟓𝟓𝟏𝟏𝟓𝟓𝟏𝟏 𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎
𝟎𝟎 𝟎𝟎 𝟏𝟏 𝟎𝟎 𝟎𝟎 𝟎𝟎𝟎𝟎 𝟎𝟎 𝟎𝟎 −𝟎𝟎. 𝟎𝟎𝟓𝟓𝟏𝟏𝟓𝟓𝟏𝟏 −𝟎𝟎. 𝟗𝟗𝟗𝟗𝟖𝟖𝟔𝟔𝟗𝟗 𝟎𝟎𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎. 𝟗𝟗𝟗𝟗𝟖𝟖𝟔𝟔𝟗𝟗 −𝟎𝟎. 𝟎𝟎𝟓𝟓𝟏𝟏𝟓𝟓𝟏𝟏 𝟎𝟎𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟎𝟎 𝟏𝟏⎦
⎥⎥⎥⎥⎤
⎩⎪⎨
⎪⎧
𝟎𝟎−𝟓𝟓. 𝟎𝟎𝟎𝟎𝐄𝐄 − 𝟎𝟎𝟒𝟒−𝟒𝟒. 𝟏𝟏𝟗𝟗𝐄𝐄 − 𝟎𝟎𝟖𝟖
𝟎𝟎𝟎𝟎𝟎𝟎 ⎭
⎪⎬
⎪⎫
=
⎩⎪⎨
⎪⎧
𝟒𝟒. 𝟗𝟗𝟗𝟗𝐄𝐄 − 𝟎𝟎𝟒𝟒𝟐𝟐. 𝟓𝟓𝟖𝟖𝐄𝐄 − 𝟎𝟎𝟓𝟓
−𝟒𝟒. 𝟏𝟏𝟗𝟗𝐄𝐄 − 𝟎𝟎𝟖𝟖𝟎𝟎𝟎𝟎𝟎𝟎 ⎭
⎪⎬
⎪⎫
N
3.3.4 Assemblage of Element Stiffness Matrices
All the stiffness matrices of element 1 to 7 are assembled to from the global stiffness matrix
of the whole mechanism shown below:
60
61
3.3.5 Assemblage of Element Load Matrices
All the external forces matrices of element 1 to 7 are assembled to form the global external
force matrix of the whole mechanism shown below:
{𝑭𝑭} =
⎩⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎨
⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎧
𝒇𝒇𝟏𝟏𝒙𝒙𝒇𝒇𝟏𝟏𝒚𝒚𝒎𝒎𝟏𝟏𝒇𝒇𝟐𝟐𝒙𝒙𝒇𝒇𝟐𝟐𝒚𝒚𝒎𝒎𝟐𝟐𝒇𝒇𝟑𝟑𝒙𝒙𝒇𝒇𝟑𝟑𝒚𝒚𝒎𝒎𝟑𝟑𝒇𝒇𝟒𝟒𝒙𝒙𝒇𝒇𝟒𝟒𝒚𝒚𝒎𝒎𝟒𝟒𝒇𝒇𝟓𝟓𝒙𝒙𝒇𝒇𝟓𝟓𝒚𝒚𝒎𝒎𝟓𝟓𝒇𝒇𝟔𝟔𝒙𝒙𝒇𝒇𝟔𝟔𝒚𝒚𝒎𝒎𝟔𝟔𝒇𝒇𝟗𝟗𝒙𝒙𝒇𝒇𝟗𝟗𝒚𝒚𝒎𝒎𝟗𝟗𝒇𝒇𝟖𝟖𝒙𝒙𝒇𝒇𝟖𝟖𝒚𝒚𝒎𝒎𝟖𝟖⎭
⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎬
⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎫
=
⎩⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎨
⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎧
𝟎𝟎𝟎𝟎𝟎𝟎
−𝟔𝟔. 𝟗𝟗𝟒𝟒𝐄𝐄 − 𝟎𝟎𝟓𝟓−𝟔𝟔. 𝟗𝟗𝟐𝟐𝐄𝐄 − 𝟎𝟎𝟓𝟓𝟏𝟏. 𝟑𝟑𝟗𝟗𝐄𝐄 − 𝟎𝟎𝟗𝟗
−𝟏𝟏. 𝟐𝟐𝟖𝟖𝐄𝐄 − 𝟎𝟎𝟒𝟒−𝟔𝟔. 𝟓𝟓𝟗𝟗𝐄𝐄 − 𝟎𝟎𝟔𝟔𝟏𝟏. 𝟑𝟑𝟗𝟗𝐄𝐄 − 𝟎𝟎𝟗𝟗
𝟎𝟎𝟎𝟎𝟎𝟎𝟎𝟎𝟎𝟎𝟎𝟎
𝟔𝟔. 𝟗𝟗𝟒𝟒𝐄𝐄 − 𝟎𝟎𝟓𝟓𝟔𝟔. 𝟗𝟗𝟐𝟐𝐄𝐄 − 𝟎𝟎𝟓𝟓
−𝟏𝟏. 𝟑𝟑𝟗𝟗𝐄𝐄 − 𝟎𝟎𝟗𝟗𝟓𝟓. 𝟔𝟔𝟑𝟑𝐄𝐄 − 𝟎𝟎𝟒𝟒𝟐𝟐. 𝟗𝟗𝟏𝟏𝐄𝐄 − 𝟎𝟎𝟓𝟓
−𝟒𝟒. 𝟐𝟐𝟑𝟑𝐄𝐄 − 𝟎𝟎𝟖𝟖𝟎𝟎𝟎𝟎𝟎𝟎 ⎭
⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎬
⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎫
N
3.3.6 Finding Unknown Displacements
A positive horizontal distributed force of magnitude 2000 µN is applied to elements 2 and
negative horizontal distributed force of magnitude 2000 µN is applied at element 6. Node
2 to 7 are free nodes while node 1 and 8 are fixed. Application of the boundary conditions
d1x= d1y=θ1 =0 and d8x= d8y=θ8 =0 at nodes 1 and 8 produce the condensed set of equations
for solution. Solving for displacements at free nodes give:
62
⎩⎪⎪⎪⎪⎪⎪⎪⎪⎨
⎪⎪⎪⎪⎪⎪⎪⎪⎧
𝒅𝒅𝟐𝟐𝒙𝒙𝒅𝒅𝟐𝟐𝒚𝒚𝜽𝜽𝟐𝟐𝒅𝒅𝟑𝟑𝒙𝒙𝒅𝒅𝟑𝟑𝒚𝒚𝜽𝜽𝟑𝟑𝒅𝒅𝟒𝟒𝒙𝒙𝒅𝒅𝟒𝟒𝒚𝒚𝜽𝜽𝟒𝟒𝒅𝒅𝟓𝟓𝒙𝒙𝒅𝒅𝟓𝟓𝒚𝒚𝜽𝜽𝟓𝟓𝒅𝒅𝟔𝟔𝒙𝒙𝒅𝒅𝟔𝟔𝒚𝒚𝜽𝜽𝟔𝟔𝒅𝒅𝟗𝟗𝒙𝒙𝒅𝒅𝟗𝟗𝒚𝒚𝜽𝜽𝟗𝟗 ⎭
⎪⎪⎪⎪⎪⎪⎪⎪⎬
⎪⎪⎪⎪⎪⎪⎪⎪⎫
=
⎩⎪⎪⎪⎪⎪⎪⎪⎨
⎪⎪⎪⎪⎪⎪⎪⎧
𝟎𝟎. 𝟖𝟖𝟗𝟗𝐄𝐄 − 𝟎𝟎𝟔𝟔𝟎𝟎. 𝟎𝟎𝟏𝟏𝟔𝟔𝐄𝐄 − 𝟎𝟎𝟔𝟔
𝟎𝟎. 𝟎𝟎𝟎𝟎𝟓𝟓𝟑𝟑𝟑𝟑𝟎𝟎. 𝟗𝟗𝟔𝟔𝐄𝐄 − 𝟎𝟎𝟔𝟔
𝟎𝟎. 𝟎𝟎𝟏𝟏𝟔𝟔𝐄𝐄 − 𝟎𝟎𝟔𝟔𝟎𝟎. 𝟎𝟎𝟎𝟎𝟑𝟑𝟓𝟓𝟗𝟗
𝟎𝟎. 𝟏𝟏𝟑𝟑𝐄𝐄 − 𝟎𝟎𝟔𝟔𝟏𝟏𝟑𝟑. 𝟐𝟐𝐄𝐄 − 𝟎𝟎𝟔𝟔−𝟎𝟎. 𝟎𝟎𝟎𝟎𝟐𝟐𝟖𝟖𝟎𝟎𝟐𝟐𝟎𝟎. 𝟏𝟏𝟓𝟓𝐄𝐄 − 𝟎𝟎𝟔𝟔
𝟏𝟏𝟐𝟐. 𝟗𝟗𝟔𝟔𝐄𝐄 − 𝟎𝟎𝟔𝟔𝟎𝟎. 𝟎𝟎𝟎𝟎𝟏𝟏𝟔𝟔𝟐𝟐
−𝟎𝟎. 𝟗𝟗𝟑𝟑𝐄𝐄 − 𝟎𝟎𝟔𝟔𝟎𝟎. 𝟎𝟎𝟏𝟏𝟖𝟖𝐄𝐄 − 𝟎𝟎𝟔𝟔
−𝟎𝟎. 𝟎𝟎𝟎𝟎𝟓𝟓𝟎𝟎𝟖𝟖−𝟎𝟎. 𝟖𝟖𝟔𝟔𝐄𝐄 − 𝟎𝟎𝟔𝟔𝟎𝟎. 𝟎𝟎𝟏𝟏𝟒𝟒𝐄𝐄 − 𝟎𝟎𝟔𝟔
−𝟎𝟎. 𝟎𝟎𝟎𝟎𝟗𝟗𝟎𝟎𝟗𝟗 ⎭⎪⎪⎪⎪⎪⎪⎪⎬
⎪⎪⎪⎪⎪⎪⎪⎫
These displacements are then multiplied with the stiffness matrix to find force reactions at
node 1 and 8 to get forces by using equation 3.2.
F = Ku (3.2)
63
{𝑭𝑭} =
⎩⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎨
⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎧
𝑭𝑭𝟏𝟏𝒙𝒙𝑭𝑭𝟏𝟏𝒚𝒚𝑴𝑴𝟏𝟏𝑭𝑭𝟐𝟐𝒙𝒙𝑭𝑭𝟐𝟐𝒚𝒚𝑴𝑴𝟐𝟐𝑭𝑭𝟑𝟑𝒙𝒙𝑭𝑭𝟑𝟑𝒚𝒚𝑴𝑴𝟑𝟑𝑭𝑭𝟒𝟒𝒙𝒙𝑭𝑭𝟒𝟒𝒚𝒚𝑴𝑴𝟒𝟒𝑭𝑭𝟓𝟓𝒙𝒙𝑭𝑭𝟓𝟓𝒚𝒚𝑴𝑴𝟓𝟓𝑭𝑭𝟔𝟔𝒙𝒙𝑭𝑭𝟔𝟔𝒚𝒚𝑴𝑴𝟔𝟔𝑭𝑭𝟗𝟗𝒙𝒙𝑭𝑭𝟗𝟗𝒚𝒚𝑴𝑴𝟗𝟗𝑭𝑭𝟖𝟖𝒙𝒙𝑭𝑭𝟖𝟖𝒚𝒚𝑴𝑴𝟖𝟖 ⎭
⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎬
⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎫
=
⎩⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎨
⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎧
−𝟏𝟏. 𝟖𝟖𝟒𝟒𝐄𝐄 − 𝟎𝟎𝟒𝟒𝟗𝟗. 𝟎𝟎𝟓𝟓𝐄𝐄 − 𝟎𝟎𝟓𝟓
−𝟏𝟏. 𝟐𝟐𝟖𝟖𝐄𝐄 − 𝟎𝟎𝟖𝟖−𝟐𝟐. 𝟓𝟓𝟏𝟏𝐄𝐄 − 𝟎𝟎𝟒𝟒−𝟗𝟗. 𝟏𝟏𝟐𝟐𝐄𝐄 − 𝟎𝟎𝟓𝟓 𝟏𝟏. 𝟔𝟔𝟔𝟔𝐄𝐄 − 𝟎𝟎𝟖𝟖−𝟔𝟔. 𝟗𝟗𝟒𝟒𝐄𝐄 − 𝟎𝟎𝟓𝟓−𝟔𝟔. 𝟗𝟗𝟐𝟐𝐄𝐄 − 𝟎𝟎𝟓𝟓𝟏𝟏. 𝟑𝟑𝟗𝟗𝐄𝐄 − 𝟎𝟎𝟗𝟗
−𝟏𝟏. 𝟐𝟐𝟖𝟖𝐄𝐄 − 𝟎𝟎𝟒𝟒−𝟔𝟔. 𝟓𝟓𝟗𝟗𝐄𝐄 − 𝟎𝟎𝟔𝟔𝟏𝟏. 𝟑𝟑𝟗𝟗𝐄𝐄 − 𝟎𝟎𝟗𝟗
−𝟏𝟏. 𝟗𝟗𝟖𝟖𝐄𝐄 − 𝟎𝟎𝟒𝟒𝟗𝟗. 𝟑𝟑𝐄𝐄 − 𝟎𝟎𝟔𝟔
−𝟐𝟐. 𝟗𝟗𝟐𝟐𝐄𝐄 − 𝟎𝟎𝟗𝟗𝟓𝟓. 𝟗𝟗𝐄𝐄 − 𝟎𝟎𝟓𝟓𝟔𝟔. 𝟐𝟐𝐄𝐄 − 𝟎𝟎𝟓𝟓
−𝟏𝟏. 𝟓𝟓𝟔𝟔𝐄𝐄 − 𝟎𝟎𝟗𝟗𝟑𝟑. 𝟗𝟗𝟒𝟒𝐄𝐄 − 𝟎𝟎𝟓𝟓𝟖𝟖. 𝟗𝟗𝟐𝟐𝐄𝐄 − 𝟎𝟎𝟓𝟓
−𝟏𝟏. 𝟑𝟑𝟗𝟗𝐄𝐄 − 𝟎𝟎𝟖𝟖−𝟐𝟐. 𝟎𝟎𝟐𝟐𝐄𝐄 − 𝟎𝟎𝟒𝟒𝟔𝟔. 𝟗𝟗𝟏𝟏𝐄𝐄 − 𝟎𝟎𝟓𝟓−𝟏𝟏. 𝟗𝟗𝐄𝐄 − 𝟎𝟎𝟖𝟖 ⎭
⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎬
⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎪⎫
3.4 Conclusions
Numerical results of kinematic equations are discussed in this chapter. Detailed parametric
analysis shows the effect of different design parameters on amplification factor. Results
show that length and angle of micro-flexure are two major geometric parameters that
control the performance of amplification mechanism. Length is having a direct and angle
is having an inverse relationship with the amplification factor. Geometric parameters are
finalized based on parametric analysis, overall size and PolyMUMPs design rules. FEA of
the designed mechanism is performed using direct stiffness matrix method. The mechanism
is disintegrated in to seven elements having eight nodes. The mechanism is constrained at
64
node 1 and node 8. A distributed force of magnitude 2000 µN is applied to elements 2 and
6. This distributed load is transferred to nodes and assumed to give global load matrix.
Stiffness matrices are calculated for all elements and assembled into one global stiffness
matrix. This global stiffness matrix is reduced by application of boundary conditions.
Solving matrices provided displacements and forces at all nodes. Results show that the
input displacement at element 2 is amplified 15.2 times at the output element 4. This
amplification factor when compared with the kinematic analysis value that is 18.75 gives
error of 18.7%. Kinematic approach is a geometric approach without considering flexible
deflection of the links. However, DSM approach is based on matrix multiplication with
application of boundary conditions and finding unknown displacements.
65
CHAPTER 4. FINITE ELEMENT ANALYSIS USING
INTELLISUITE®
4.1 Introduction
In this chapter, FEA of the proposed amplification mechanism using commercial software
IntelliSuite® is presented. In previous chapter amplification factor of the mechanism was
found out using direct stiffness method that is an implementation of FEM. Configuration
2, that is giving maximum amplification factor, was taken into consideration. However, all
the three configurations are analyzed here.
IntelliSuite® is a family of innovative CAD tools set for MEMS layout design, advanced
process simulation, FEA, parametric analysis, system simulation, fabrication and
packaging analysis. The model, as shown in Figure 4-1, is designed in 3D Builder module
and simulated in Thermo-Electro-Mechanical (TEM) module of IntelliSuite® software.
The simulated results are discussed in the upcoming sections. Static analysis of all three
configurations of the designed mechanism are performed and results discussed in detail.
Natural frequencies and associated mode shapes of the mechanism configurations during
free vibrations are also investigated.
Figure 4-1 Solid model of micro displacement amplification mechanism
66
4.2 ABAQUS
IntelliSuite® uses software technology from ABAQUS for numerical solutions of finite
element models. ABAQUS is well-known for handling highly nonlinear cases involving
high degrees of coupling between energy domains such as thermal, mechanical, and
electrical. ABAQUS utilizes Extended Finite Element Method (XFEM) approach for
handling discontinuities relating to moving boundaries and interfaces.
MEMS devices like micro-resonators, micro-rotors and RF-switches include mechanical
structures moving in an electrostatic field. For this type of problems, it is required to
evaluate accurately the electrostatic forces acting on the devices. XFEM can handle moving
boundaries and interfaces in the electrostatic domain very easily. Different XFEM
techniques were investigate to solve the electrostatic problem when the electrostatic
domain is bounded by a conducting material in 2010 (Rochus et al., 2011).
4.3 Extended Finite Element Method
The XFEM, also known as generalized finite element method (GFEM) or partition of unity
method (PUM) is a numerical technique that extends the solution space for solutions to
differential equations with discontinuous functions. XFEM was established to simplify
difficulties in solving problems with localized features that cannot be resolved by mesh
refinement.
In XFEM, discontinuous basis functions are added to standard polynomial basis functions
for nodes that belong to elements that are intersected by a crack to provide a basis that
included crack opening displacements. A basic advantage of XFEM is that in to track the
67
crack path we don’t need to update the finite element mesh every time. XFEM finds its
application for problems involving singularities, material interfaces, regular meshing of
micro structural features such as voids, and other problems where a localized feature can
be described by an appropriate set of basic functions.
Moreover, handling problems having discontinuities with XFEM suppresses the need to
mesh and re-mesh the discontinuity surfaces, thus lowering the computational costs and
projection errors associated with conventional FEM, at the cost of restricting the
discontinuities to mesh edges.
XFEM is multipurpose tool for analyzing problems having discontinuities and complex
geometries (Belytschko, Gracie and Ventura, 2009). These methods can handle problems
related to crack propagation, grain boundaries, dislocations and phase boundaries
(Belytschko, Gracie and Ventura, 2009).
In XFEM, mesh can be created which is not dependent on entities morphology.
Furthermore, we can add enrichment functions to approximate spaces. For example, while
investigating cracks in elastic medium, need for significant mesh refinement can be
reduced by incorporating asymptotic singular near-field solutions to crack fronts or
dislocation cores (Belytschko, Gracie and Ventura, 2009). Modeling of discontinuous
phenomena in structures and materials becomes easy with XFEM.
To deal with a crack problem in conventional FEM two conditions are to be satisfied. First
the meshed element edges should coincide properly with surface of the crack. Secondly to
place nodes on all side of cracks so that material can be separated. These two conditions
are very difficult to be fulfilled specially in case of 3D problems.
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In XFEM, a discontinuous field is introduced by adding an extra basis functions. Similarly
XFEM facilitates modeling of phase boundaries. These advantages become more important
while dealing with the conditions where geometry is evolving, especially when crack is
growing crack or dynamic phase boundaries. XFEM uses local enrichments to handle
discontinuities. XFEM can be utilized to construct meshes that are structured and
unstructured. In material sciences, structured meshes are of interest, where unit cell
properties are to be determined. Engineering structures use unstructured meshes because
engineering problems require mesh to be conformed to external boundaries.
The development of XFEM was a result of the broad research in mesh free methods
(Belytschko et al., 1996). Previous surveys of XFEM have been given by Karihaloo and
Xiao (Karihaloo and Xiao, 2003) and by Abdelaziz and Hamouine (Abdelaziz and
Hamouine, 2008); a mathematical survey of XFEM was given by Babuska et al. (Babuka,
Banerjee and Osborn, 2003) and a recent review of XFEM for fracture is given by Rabczuk
et al. (Babuka, Banerjee and Osborn, 2003).
Partition of unity concept is the foundation of XFEM. This is used to enrich finite elements
or mesh-free approximations (Duarte and Oden, 1996). A partition of unity in a domain Ω
is a set of functions given below:
∑ 𝝋𝝋𝟐𝟐∀𝟐𝟐 (𝒙𝒙) = 𝟏𝟏, ∀𝒙𝒙 ∈ Ω (4.1)
In XFEM, any function can be regenerated by multiplication of partition of unity functions
with that function.
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Furthermore, when the sum is modified by introducing parameters qI, the enrichment
function can be adjusted by these parameters by using the approximation. Using the
approximation given below, we can adjust the enrichment function in case a parameters qI
is added.
𝒖𝒖𝒉𝒉(𝒙𝒙) = ∑ 𝑵𝑵𝟐𝟐∀𝟐𝟐 (𝒙𝒙)𝒖𝒖𝟐𝟐 + ∑ 𝝋𝝋𝟐𝟐∀𝟐𝟐 (𝒙𝒙)𝜸𝜸(𝒙𝒙)𝒒𝒒𝟐𝟐 (4.2)
Here, NI is standard shape functions and uI is the standard nodal DOF.
4.4 Static Analysis of Three Configurations
The displacement amplification mechanism discussed in chapter 3 having parameters given
in the Table 3-1 has been analyzed here. Modeling and simulation of the designed
mechanism has been carried out using commercial software IntelliSuite®. Same models
were used to make masks for fabrication using IntelliMask. To test the mechanism,
controlled input and some sensing mechanism was desired. So, thermal chevrons were used
to provide input displacement because of their high force and large displacement
characteristics with less voltage and high power consumption. Electrostatic sensing was
used to sense the output displacement but unfortunately thermal chevrons did not produced
enough input displacement that can be sensed. So, design and functionality of thermal
chevrons and electrostatic comb drives is not discussed. Probe heads equipped with
tungsten needles were used to provide input displacement and image processing software
was used to calculate the output displacement produced. That’s why the three
configurations designs shown in the simulations have thermal chevrons at the input side
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and electrostatic comb drives at the output end. To restrict out of plane motion, supporting
flexures were incorporated attached to the ends of comb drives.
Static analysis of displacement amplification mechanism having three configurations is
carried out under unidirectional input displacement load conditions. All the three
configurations are analyzed and discussed below in detail.
4.4.1 Configuration 1
An input displacement of 1 μm along X-axis, as shown in Figure 4-2(a), is amplified to
9.17 μm along Y-axis as shown in Figure 4-2(b). Unidirectional motion will produce in-
plane reaction forces along X and Y axis as shown in Figures 4-3 (a & b).
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(a)
(b)
Figure 4-2 (a) Input displacement of 1 μm given to side mass along X-axis (b) Output displacement of 9.17 μm produced along Y-axis
72
(a)
(b)
Figure 4-3 (a) Reaction force produced along X-axis (b) Y-axis, with an application of input displacement of 1 μm along X-axis
73
4.4.2 Configuration 2
With unidirectional input displacement of 1 μm given along X-axis, as shown in Figure 4-
4(a), output displacement of 17.09 μm along Y-axis is produced as shown in Figure 4-4(b).
Figures 4-5 (a & b) show reaction forces produced with the application of motion.
4.4.3 Configuration 3
With same input displacement of 1 μm given to side masses inward, as shown in the Figure
4-6(a), an amplified output along Y-axis comes out to be 17.04 μm as shown in the Figure
4-6(b). Figures 4-7(a & b) shows reaction forces produced when input displacement is
applied.
74
(a)
(b)
Figure 4-4 (a) Input displacement of 1 μm given to side masses along X-axis (b) Output displacement of 17.09 μm produced along Y-axis
75
(a)
(b)
Figure 4-5 (a) Reaction force produced along X-axis (b) Y-axis, with an application of input displacement of 1 μm along X-axis
76
(a)
(b)
Figure 4-6 (a) Input displacement of 1 μm given to side masses along X-axis (b) Output displacement of 17.04 μm produced along Y-axis
77
(a)
(b)
Figure 4-7 Reaction forces produced along (a) X-axis (b) Y-axis, with an application of 1 μm input displacement
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4.5 Modal Analysis
FEM has been used to perform modal analysis of the proposed amplification mechanism
to determine the natural frequencies and associated mode shapes during free vibration.
Natural frequencies of the proposed mechanism are given in Table 4-1. Since the proposed
mechanism moves in XY plane only, so the natural frequency at the desired mode will
exhibit pure in-plane motion.
Table 4-1 Frequencies and associated modes of three configurations of the mechanism
Mode no. Configuration 1
Frequency(kHz)
Configuration 2
Frequency(kHz)
Configuration 3
Frequency(kHz)
Mode 1 55.79 86.66 54.84
Mode 2 55.79 237.50 55.22
Mode 3 168.76 242.54 163.40
Mode 4 168.76 276.00(desired mode) 165.80
Mode 5 207.55 305.10 203.05
Mode 6 207.55 333.02 205.60
Mode 7 211.21 343.36 208.37
Mode 8 211.21(desired mode) 393.32 208.79(desired mode)
Mode 9 257.49 435.24 252.86
Mode 10 257.50 468.57 255.47
4.6 Comparison of Amplification Factor
Comparison of amplification factor achieved through kinematic equations, FEA using
direct stiffness method and FEA using IntelliSuite® with design amplification factor is
shown in Table 4-2. Reasons for error is because; the kinematic approach is a geometric
approach without considering flexible deflection of the links. However, DSM approach is
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based on matrix multiplication with application of boundary conditions and finding
unknown displacements. While IntelliSuite® is using XFEM approach. Different
approaches may also increase the error percentages.
Table 4-2 Comparison of displacement amplification factors
Amplification Factor % Error
Kinematic analysis 18.75 -
FEM (DSM) 15.17 18.71
FEM(IntelliSuite®) 17.09 8.85
4.7 Conclusions
In this chapter, FEA of three configurations of the proposed mechanism is discussed in
detail. Static analysis of the mechanism depicts that amplification factors of 9.17, 17.09
and 17.04 can be achieved with three configurations of the mechanism. Amplification
factor of configuration 2 of the displacement amplification mechanism is compared with
FEA using DSM and kinematic model. Natural frequencies at desired modes of three
configurations are 221.21 kHz, 276 kHz and 208.79 kHz respectively.
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CHAPTER 5. DISPLACEMENT AMPLIFICATION
MECHANISM FABRICATION AND CHARACTERIZATION
5.1 Introduction
In the previous chapter, static and modal analysis of the displacement amplification
mechanism was carried out using commercial software IntelliSuite®. Prototypes are
designed, keeping in view design rules for PolyMUMPs, using IntelliMask for designing
of mask layouts. Prototypes of the designed amplification mechanisms are fabricated from
MEMSCAP, USA through CMC Microsystems, Canada using commercially available
Multi-User MEMS Processes PolyMUMPs. PolyMUMPs is a low cost, commercially
available, general purpose micromachining process for MEMS devices available from
MEMSCAP(Cowen et al., 2013). All the experimentation is conducted in the MEMS Lab,
Queen’s University, Kingston, ON, Canada. Static measurements were performed using
Manual Electric Probe System – SÜSS MicroTec PM5. High resolution, 2594x1944,
images were captured using PSM-1000 Laser ready Modular Microscope using ELWD
10X PA Plan Apochromat.
5.2 PolyMUMPs
PolyMUMPs is micromachining process available for developing MEMS devices available
from MEMSCAP, USA. The process consists of three layer of Polysilicon that are micro-
machined and used as the structural material for device development. Sacrificial layer is a
deposited oxide and for electrical isolation silicon nitride is used (Cowen et al., 2013). It
was developed by Berkeley Sensor & Actuator Center. The basic process includes 8
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lithography levels, and 7 physical layers as shown in Figure 5-1 including two mechanical
layers of Polysilicon, one electrical layer of Polysilicon, two sacrificial layers, one
electrical conduction layer and one electrical isolation layer.
Figure 5-1 Seven layers of the PolyMUMPs process (Cowen et al., 2013)
The process consists of 150 mm n-type (100) silicon wafers of 1-2 ohm-cm resistivity. The
surface of the wafer is heavily doped with phosphorus using a phosphor-silicate glass
(PSG) sacrificial layer trailed by a 600 nm low-stress LPCVD (low pressure chemical
vapor deposition) silicon nitride layer that acts as an electrical isolation layer. A LPCVD
Polysilicon film of 500nm is deposited-Poly 0 and patterned by photolithography. After
etching Poly 0 layer a 2.0 cm phosphor-silicate glass (PSG) sacrificial layer is deposited
by LPCVD and annealed at 1050°C for 1 hour in argon. This layer of PSG, known as First
Oxide, is removed to free the first mechanical layer of Polysilicon. The sacrificial layer is
lithographically patterned with the DIMPLES mask and the dimples are transferred into
the sacrificial PSG layer in an RIE (Reactive Ion Etch) system (Cowen et al., 2013).
82
The wafers are patterned with the ANCHOR1 followed by reactive ion etching. After
etching, Poly 1 that is 1st structural layer of Polysilicon is deposited. A 200 nm PSG layer
is deposited over the substrate and annealed at 1050°C for 60 minutes. Polysilicon is doped
with phosphorus from the PSG layers on both sides by annealing. To get POLY1
Polysilicon is lithographically patterned using a mask designed followed by PSG layer
etched to produce a hard mask (Cowen et al., 2013).
2nd sacrificial PSG layer that is 750 nm thick is deposited, annealed and patterned using
two dissimilar etch masks. Etch holes in the 2nd Oxide down to the Poly 1 layer is delivered
by POLY1_POLY2_VIA level. This generates connection between the Poly 1 and Poly 2
layers. The POLY1_POLY2_VIA layer is lithographically patterned and etched by RIE.
Metal layer is final deposited layer having thickness of 0.5 cm and used for probing,
bonding and electrical routing (Cowen et al., 2013).
5.3 Kinematic Analysis
Prototypes of three configurations of the mechanism are designed such that thermal
chevrons have been used for providing input displacement and electrostatic comb drives
for sensing the output displacement. Thermal chevrons did not produced enough input
displacement that can be sensed by comb drives. So, design and functionality of thermal
chevrons and electrostatic comb drives are not discussed.
Probes Heads equipped with tungsten probes have been used for providing input
displacement and output displacement are measured using image processing software.
With image resolution of 2594x1944, pixels density, that is pixels per µm, has been
calibrated with the scale given by Polytec as shown in Figure 5-2. Images were captured
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keeping resolution, 2594x1944, fixed. Individual images of the mechanism were taken at
different displacements before and after application of forces. The displacements were
measured in pixels and converted to micrometers by image processing software.
Figure 5-2 Reference image to find pixel density per µm
5.3.1 Configuration 1
An input displacement of 1.11 μm is applied manually through Probe Head placed on the
stable platen. The probe head, equipped with tungsten needles has been connected to platen
by vacuum. Figure 5-3 shows microscopic image of fabricated prototype of displacement
amplification mechanism having configuration 1. The input displacement is amplified at
the output giving displacement of 8.44 μm. Hence the amplification factor is 7.6. Figure 5-
4 shows the final position of the mechanism after application of force.
84
Figure 5-3 Microscopic image of the configuration 1 of micro displacement amplification mechanism
Figure 5-4 Microscopic image of the prototype after application of force along X-axis to the side mass producing output displacement of 8.44 μm along Y-axis
5.3.2 Configuration 2
Configuration 2 prototype is shown in Figure 5-5. Application of 0.22 μm displacement on
both side masses produces output displacement of 3.55 μm giving an amplification factor
85
of 16. Figures 5-6 (a & b) shows initial and final output position before and after application
of force.
Figure 5-5 Microscopic image of the configuration 2 of micro displacement amplification mechanism
(a) (b)
Figure 5-6 (a) Microscopic image of the output before application of force (b) Microscopic image of the output after application of force
86
5.3.3 Configuration 3
Microscopic image of the configuration 3 prototype is shown in Figure 5-7. An input
displacement of 0.55 μm displacement on both side masses produces output displacement
of 8.88 μm at both output ends giving an amplification factor of 16.14.
Figure 5-7 Microscopic image of the configuration 3 of micro displacement amplification mechanism
Figures 5-8(a & b) shows initial and final output position before and after application of
force.
87
(a)
(b)
Figure 5-8 (a) Microscopic image of the output before application of force (b) Microscopic image of the output after application of force
88
5.4 Force Analysis
Force and stiffness produced by the designed mechanism on application of external force
applied is measured by using Manual Electric Probe System – SÜSS MicroTec PM5 having
an acupuncture micro-needle.
The micro-needle is placed at an angle of 30–45◦ at Y-axis with reference to the device
placed on horizontal bed of Manual Electric Probe System. The x, y and z positioning stages
have been calibrated before positioning needle tip and taking measurement. An
acupuncture needle and the amplification mechanism experience the same contact force.
So they are acting as two springs connected in series;
F= KN (δNB – δNT) (5.1)
Where, KN is acupuncture needle stiffness, δNB and δNT are displacement in the horizontal
plane of needle base and tip respectively.
Choice of an acupuncture needle having same stiffness as that of the displacement
amplification mechanism to be tested is very important. If soft acupuncture needle is used,
compliance of needle will govern the compliance of the system (Lai et al., 2004).
Acupuncture needle is made from stainless steel having stiffness calculated using equation
5.2.
KN = 𝟑𝟑𝑬𝑬𝟐𝟐𝑳𝑳𝟑𝟑
(5.2)
89
Where E represents Young’s modulus having value of 190 GPa, I is the moment of inertia,
L is the length and D is diameter of the needle.
Comparing needle tip displacement with respect to needle base displacement we can easily
find acupuncture needle displacement (Lai et al., 2004). Needle base displacement is
measured using the calibrated knobs on the micro-force probe. Needle tip displacement is
measured by taking a series of high-resolution pictures of the needle tip through the high
resolution cameras connected with the microscope. The displacements were measured in
pixels by the image processing software.
The prototypes are suspended 2 μm above the polysilicon substrate. It is essential to make
sure the needle-tip is not in contact with the polysilicon substrate. During experimentation
measures forces magnitudes can go significantly higher if the acupuncture needle is not
handled properly and it starts dragging on the substrate. Dragging can be detected by
moving the probe forwards and back: if the tip drags, the forward and backward
measurements will not overlap (Lai et al., 2004).
Stress analysis of the mechanism is not carried out. However, nodal displacements and
force analysis can be used for calculation stresses and finding factor of safety in future.
5.4.1 Configuration 1
A uniaxial input force of magnitude 106.1 μN, applied using acupuncture needle produces
maximum deflection of 4 μm which is then amplified 7.6 times for configuration 1. Input
displacement vs. input force plot is shown in Figure 5-9.
90
Figure 5-9 Deflection vs. input force plot of configuration 1
5.4.2 Configuration 2
A 4.25 μm deflection produced by application of 165.7 μN force being amplified 16 times
gives deflection of 68 μm. Input displacement vs. input force plot is shown in Figure 5-10.
Figure 5-10 Deflection vs. input force plot of configuration 2
91
5.4.3 Configuration 3
A force 69.5 μN producing 4.2 μm deflection is amplified 16.14 times gives deflection of
67.79 μm. Input displacement vs. input force plot is shown in Figure 5-11.
Figure 5-11 Deflection vs. input force plot of configuration 3
5.5 Natural Frequency Calculation
Natural frequency of the mechanism is found using equation 5.3.
𝒇𝒇 = 𝟏𝟏𝟐𝟐𝟐𝟐 �
𝑲𝑲𝒎𝒎𝒆𝒆𝒇𝒇𝒇𝒇
(5.3)
Where f is natural frequency, K is the stiffness and meff is effective mass of the mechanism.
Stiffness of the mechanism is calculated using equation 5.4. Output force was measured
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experimentally at the amplified output end using acupuncture needles, with known
stiffness. Displacements were measured in pixels, by taking high resolution pictures, and
converted to micrometers by image processing software. Stiffness of three configuration
are shown in Table 5-1.
k = 𝑭𝑭𝒙𝒙
(5.4)
Effective mass of the mechanism has been found out by Rayleigh's method that equates
kinetic and potential energy as shown below.
𝑲𝑲. 𝑬𝑬𝒎𝒎𝒊𝒊𝒙𝒙 = 𝑷𝑷. 𝑬𝑬𝒎𝒎𝒊𝒊𝒙𝒙
Potential energy is found from equation 5.5.
PEmax = ∫ 𝐤𝐤𝐲𝐲𝐲𝐲(𝐥𝐥)𝐦𝐦𝐦𝐦𝐦𝐦
𝟎𝟎 𝐲𝐲𝐲𝐲𝐲𝐲 = 𝟏𝟏𝟐𝟐
𝐤𝐤𝐲𝐲 𝐲𝐲(𝐥𝐥)𝐦𝐦𝐦𝐦𝐦𝐦𝟐𝟐 (5.5)
Here, l, w and t are length, width and thickness respectively. Ky is the spring constant.
The maximum kinetic energy is found from equation 5.6.
KEmax = ∫ 𝟏𝟏𝟐𝟐
𝒍𝒍𝟎𝟎 𝒑𝒑𝒑𝒑𝑬𝑬𝒑𝒑(𝒙𝒙)𝟐𝟐𝒅𝒅𝒙𝒙 = ∫ 𝟏𝟏
𝟐𝟐𝒍𝒍
𝟎𝟎 𝒑𝒑𝒑𝒑𝑬𝑬𝝎𝝎𝟐𝟐𝒚𝒚(𝒙𝒙)𝟐𝟐𝒅𝒅𝒙𝒙 (5.6)
93
In general, kinetic energy is given by equation 5.7
KEmax = 𝟏𝟏𝟐𝟐
𝒑𝒑𝒑𝒑𝑬𝑬𝝎𝝎𝟐𝟐 ∫ 𝒚𝒚(𝒙𝒙)𝟐𝟐𝒍𝒍𝟎𝟎 𝒅𝒅𝒙𝒙 (5.7)
Applying Rayleigh's method,
𝟏𝟏𝟐𝟐
𝒌𝒌𝒚𝒚 𝒚𝒚(𝒍𝒍)𝒎𝒎𝒊𝒊𝒙𝒙𝟐𝟐 = 𝟏𝟏
𝟐𝟐𝒑𝒑𝒑𝒑𝑬𝑬𝝎𝝎𝟐𝟐 ∫ 𝒚𝒚(𝒙𝒙)𝟐𝟐𝒍𝒍
𝟎𝟎 𝒅𝒅𝒙𝒙 (5.8)
Resonant frequency is given in equation 5.9.
𝝎𝝎𝒄𝒄𝟐𝟐 = 𝒌𝒌𝒚𝒚 𝒚𝒚(𝒍𝒍)𝒎𝒎𝒊𝒊𝒙𝒙
𝟐𝟐
𝒑𝒑𝒑𝒑𝑬𝑬𝝎𝝎𝟐𝟐 ∫ 𝒚𝒚(𝒙𝒙)𝟐𝟐𝒍𝒍𝟎𝟎 𝒅𝒅𝒙𝒙
= 𝒌𝒌𝒚𝒚
𝒎𝒎𝒆𝒆𝒇𝒇𝒇𝒇 (5.9)
The effective mass can be found from equation 5.10.
𝒎𝒎𝒆𝒆𝒇𝒇𝒇𝒇 = 𝒑𝒑𝒑𝒑𝑬𝑬 ∫ � 𝒚𝒚(𝒙𝒙)𝒚𝒚(𝒍𝒍)𝒎𝒎𝒊𝒊𝒙𝒙
�𝟐𝟐
𝒅𝒅𝒙𝒙 𝒍𝒍𝟎𝟎 (5.10)
For the displacement amplification mechanism under consideration, effective mass can be
found using equation 5.11.
94
𝒎𝒎𝒆𝒆𝒇𝒇𝒇𝒇 = ∫ 𝒑𝒑(𝒙𝒙)𝟐𝟐(𝒙𝒙) � 𝒚𝒚(𝒙𝒙)𝒚𝒚(𝒍𝒍)𝒎𝒎𝒊𝒊𝒙𝒙
�𝟐𝟐
𝒅𝒅𝒙𝒙 𝒍𝒍𝟎𝟎 (5.11)
Here A(x) is the cross-sectional area.
Effective mass of the configuration 2 of the mechanism is calculated below.
𝒎𝒎𝒆𝒆𝒇𝒇𝒇𝒇= 𝟒𝟒𝒑𝒑𝒑𝒑𝑭𝑭𝑭𝑭𝟐𝟐𝑬𝑬 ∫ �𝒚𝒚𝑭𝑭𝑭𝑭𝟐𝟐(𝒙𝒙)𝒚𝒚𝒎𝒎𝒊𝒊𝒙𝒙
�𝟐𝟐
𝒅𝒅𝒙𝒙 𝒍𝒍𝟎𝟎 + 𝟐𝟐𝒑𝒑𝒑𝒑𝑭𝑭𝑭𝑭𝑬𝑬 ∫ �𝒚𝒚𝑭𝑭𝑭𝑭(𝒙𝒙)
𝒚𝒚𝒎𝒎𝒊𝒊𝒙𝒙�
𝟐𝟐𝒅𝒅𝒙𝒙 𝒍𝒍
𝟎𝟎 +
𝒎𝒎𝒄𝒄 � 𝒚𝒚𝒄𝒄𝒚𝒚𝒎𝒎𝒊𝒊𝒙𝒙
�𝟐𝟐
(5.12)
For the guided-end flexure connected to the anchor and the plate is given by equations 5.13
and 5.14 respectively.
𝒚𝒚𝑭𝑭𝑭𝑭𝟐𝟐(𝒙𝒙) = 𝑭𝑭/𝟒𝟒𝑬𝑬𝟐𝟐
�− 𝒙𝒙𝟑𝟑
𝟔𝟔+ 𝒍𝒍𝒙𝒙𝟐𝟐
𝟒𝟒� (5.13)
𝒚𝒚𝑭𝑭𝑭𝑭(𝒙𝒙) = 𝑭𝑭/𝟒𝟒𝑬𝑬𝟐𝟐
�− 𝒙𝒙𝟑𝟑
𝟔𝟔+ 𝒍𝒍𝒙𝒙𝟐𝟐
𝟒𝟒� + 𝟏𝟏
𝟐𝟐𝒚𝒚𝒎𝒎𝒊𝒊𝒙𝒙 (5.14)
95
Considering the structure as a rigid body, the maximum displacement of the shuttle is given
below:
𝒚𝒚𝒎𝒎𝒊𝒊𝒙𝒙 = 𝑭𝑭𝒍𝒍𝟑𝟑
𝟐𝟐𝟒𝟒𝑬𝑬𝟐𝟐 (5.15)
Substituting equation 5.13 to 5.15 gives
𝒚𝒚𝑭𝑭𝑭𝑭(𝒙𝒙)𝒚𝒚𝒎𝒎𝒊𝒊𝒙𝒙
= − �𝒙𝒙𝒍𝒍�
𝟑𝟑+ 𝟑𝟑
𝟐𝟐�𝒙𝒙
𝒍𝒍�
𝟐𝟐 (5.16)
𝒚𝒚𝑭𝑭𝑭𝑭𝟐𝟐(𝒙𝒙)𝒚𝒚𝒎𝒎𝒊𝒊𝒙𝒙
= − �𝒙𝒙𝒍𝒍�
𝟑𝟑+ 𝟑𝟑
𝟐𝟐�𝒙𝒙
𝒍𝒍�
𝟐𝟐+ 𝟏𝟏
𝟐𝟐 (5.17)
After integration and some tedious algebra
𝒎𝒎𝒆𝒆𝒇𝒇𝒇𝒇= 𝒎𝒎𝑭𝑭𝑭𝑭𝟐𝟐 �𝟏𝟏𝟑𝟑𝟑𝟑𝟓𝟓
�+ 𝒎𝒎𝑭𝑭𝑭𝑭 �𝟖𝟖𝟑𝟑𝟗𝟗𝟎𝟎
�+ 𝒎𝒎𝒄𝒄 (5.18)
Calculating the masses gives
𝒎𝒎𝑭𝑭𝑭𝑭𝟐𝟐= 2.33 × 10-12 kg
𝒎𝒎𝑭𝑭𝑭𝑭= 2.79 × 10-12 kg
𝒎𝒎𝒄𝒄= 6.33 × 10-12 kg
Substituting the above calculated masses in equation 5.18, gives an effective mass of
10.22×10-12 kg for configuration 2 of the mechanism. Following the same procedure,
96
effective masses of configuration 1 and 3 are also calculated as shown in the Table 5-1.
Natural frequencies and stiffness’s of three configurations are calculated using equation
5.3 and 5.4 respectively. Comparison of natural frequencies of three configurations of
displacement amplification mechanism achieved experimentally and from FEM using
IntelliSuite® is shown in the Table 5-2. Single degree of freedom system is taken into
consideration so only 1st mode is compared. The error percentage between experimental
and FEM results may be because of difference in boundary conditions, fabrication defects
and calculation errors.
Table 5-1 Natural frequencies of three configurations of the displacement amplification mechanisms
Effective Mass (meff) Stiffness (k) Natural Frequency (f)
Configuration 1 16.55 × 10-12 kg 3.12 N/m 69.13 kHz
Configuration 2 10.22 × 10-12 kg 3.6 N/m 94.50 kHz
Configuration 3 16.55 × 10-12 kg 3.0 N/m 67.7kHz
97
Table 5-2 Comparison of natural frequencies of three configurations of displacement amplification mechanism
Natural Frequency
(Intellisuite®)
Natural Frequency
(Experimental)
Error %
Configuration 1 55.79 69.13 kHz 19
Configuration 2 86.66 94.50 kHz 8.2
Configuration 3 54.84 67.7kHz 19.05
5.6 Comparison of Amplification Factors
A comparative study is carried out between results of kinematic equations, direct stiffness
method, FEA using IntelliSuite® and experimentation as shown in the Table 5-3.
Comparison of FEM and Experimental amplification factors of configuration 1, 2 & 3 is
shown in the Table 5-4. Reason of difference in amplification factor achieved
experimentally and that of IntelliSuite® is because of fabrication defects and difference in
boundary conditions. While the variance in amplification factor achieved using
IntelliSuite® and that of DSM is because of difference in FEM techniques, that is, DSM is
using matrix approach and IntelliSuite® is using XFEM. Comparison of amplification
factor achieved with kinematic and experimental analysis shows a difference because of
computation errors and assumptions made in kinematic analysis in which displacement of
flexures is achieved with geometric approach.
98
Table 5-3 Comparison of displacement amplification factors
Amplification Method % Error
Kinematic analysis 18.75 -
FEM (DSM) 15.17 18.71
FEM(IntelliSuite®) 17.09 8.85
Experimental 16 14.6
Table 5-4 Comparison of FEM and experimental amplification factors of configuration 1, 2 & 3
Ampification Factor Configuration 1 Configuration 2 Configuration 3
FEM 9.17 17.09 17.04
EXPERIMENTAL 7.6 16 16.14
Comparison plots of force analysis for configurations 1, 2 and 3 are shown in the Figures
5-12, 5-13and 5-14 below. Difference in results of FEM simulations and experimental data
may be because of fabrication errors, human error and lab uncertainties.
99
Figure 5-12 Comparison of FEM and experimental results of force analysis of configuration 1
Figure 5-13 Comparison of FEM and experimental results of force analysis of configuration 2
100
Figure 5-14 Comparison of FEM and experimental results of force analysis of configuration 3
5.7 Conclusions
Testing of prototypes developed with PolyMUMPs is discussed in detail. Experimentation
methodology is first discussed before presenting empirical results of the designed
amplification mechanism. Amplification factors of 7.6, 16 and 16.14 are achieved with
three configurations. These amplification factors are compared with FEM and analytical
results. Comparison of the three shows a close coordination. Reason of difference in
amplification factor achieved experimentally and that of IntelliSuite® is because of
fabrication defects and difference in boundary conditions.
Sensitivity can be increased by creating larger displacements or by employing larger comb
array sensors. Large displacements can be achieved via displacement amplification or via
softer spring suspensions. Displacement amplification is a better choice as it does not alter
the noise floor of the readout circuitry. Adding large combs add extra mass and need
101
supporting flexures for keeping combs in-plane. Adding extra mass will alter the natural
frequency and more high forces will be needed to displace proof mass. Softer suspension
can increase the displacement but integrity of the mechanism is compromised. Moreover,
softer suspension will also produce undesired out of plane motions that will ultimately
lower the amplification factor. Displacement amplification mechanism is a good option as
they can be easily incorporated with the transducer structure, don’t consume high power
and can be fabricated using commercial fabrication processes that is economical.
102
CHAPTER 6. VARIANT OF DISPLACEMENT
AMPLIFICATION MECHANISM
6.1 Introduction
In previous chapter, three configurations of proposed displacement amplification
mechanism have been tested. Results depict that configuration 2 and configuration 3 can
produce amplification factor of the order of 16 and 16.14 respectively. All configurations
produce amplification in the direction perpendicular to the direction of applied
displacement. So, keeping into consideration that a combination of different configurations
can give even higher amplification factor, configuration 2 and configuration 3 of the
designed amplification mechanism have been combined. Primary goal of the new design
of displacement amplifier presented in this chapter, is to investigate the amplification factor
produced by combination of different configurations of already designed mechanism and
secondary to get amplification in parallel direction instead of perpendicular. A mechanism
consisting of configuration 2 and configuration 3 is designed as shown in Figure 6-1.
Mathematical model of the mechanism is developed using kinematic approach followed
by parametric analysis to optimize the design and finalize the design parameters. FEA is
performed using commercial software IntelliSuite®. Prototype has been fabricated using
PolyMUMPs process and tested at MEMS Lab, Queen’s University, Kingston, Canada.
Comparison of amplification factors is presented at the end of the chapter. The mechanism
is fixed at the two ends shown by point 1 in the Figure 6-1.
103
Figure 6-1 Schematic diagram of displacement amplification mechanism
6.2 Design Description
The proposed amplification mechanism shown in Figure 6-1 is combination of two
configuration no. 2 (marked as 1 and 2 in Figure 6-1) and one configuration no. 3 (marked
as 3 in Figure 6-1) amplification mechanisms. The mechanism is fixed at both ends marked
as 1. Input displacement, U1y, applied to side masses m1 to m4 produces deflection of micro
flexures in compliant mechanisms 1 and 2; that is amplified at output, U4x, in perpendicular
direction. This amplified output act as an input for compliant mechanism 3 that is again
amplified to give output displacement, U8y, parallel to the displacement U1y.
104
The amplification factor was expected to be more than the amplification factor achieved
during experimentation in previous chapter but it is small than the one achieved earlier.
This is because of increased stiffness value of the whole amplification mechanism that has
become three times as compared to the individual compliant mechanism. Parametric
analysis has been carried out to finalize the dimensions of the mechanism. Polysilicon has
been used to fabricate prototype using PolyMUMPs process. The improved actuation can
be utilized in applications, like micro-pump and micro-gyroscopes, where large
displacement motion of the actuator is needed (Shakoor et al., 2005). The displacement
amplification mechanism can be used on actuation side for micro-pumps. However, this
mechanism can be incorporated in micro gyros on sensing side to increase the overlap area
of electrostatic comb drives, thus increasing the differential capacitive signal.
Figure 6-2 Spring model of displacement amplification mechanism
105
6.3 Analytical Modelling
6.3.1 Mathematical Model
The kinematic equations of the amplification mechanism are derived using geometric
approach shown below:
U4x = L1 (sin cos-1 �𝒄𝒄𝒄𝒄𝒄𝒄𝒄𝒄𝟏𝟏 − 𝑼𝑼𝟏𝟏𝒚𝒚
𝑳𝑳𝟏𝟏� – sinα1) (6.1)
U8y = L2 (sin cos-1 �𝒄𝒄𝒄𝒄𝒄𝒄𝒄𝒄𝟐𝟐 − 𝑳𝑳𝟏𝟏 (𝒄𝒄𝒊𝒊𝒊𝒊𝒄𝒄𝒄𝒄𝒄𝒄−𝟏𝟏 (𝒄𝒄𝒄𝒄𝒄𝒄𝒄𝒄𝟏𝟏− 𝑼𝑼𝟏𝟏𝒚𝒚/𝑳𝑳𝟏𝟏) – 𝒄𝒄𝒊𝒊𝒊𝒊𝒄𝒄𝟏𝟏) 𝑳𝑳𝟐𝟐
� –
sinα2) (6.2)
Here U1y is input displacement, U4x and U8y are output displacements of compliant
mechanism 1 and 3 respectively, L1 is length of flexure of compliant mechanism 1 and 2,
α1 is the angle made by the flexure of compliant mechanism 1 and 2. L2 is length of micro-
flexure of compliant mechanism 3, α2 is the angle made by the micro-flexure of compliant
mechanism 3.
The force matrix for the mechanism is given below:
�𝑭𝑭𝒙𝒙 𝒄𝒄𝒖𝒖𝑬𝑬𝑭𝑭𝒚𝒚 𝒄𝒄𝒖𝒖𝑬𝑬𝑴𝑴𝒄𝒄𝒖𝒖𝑬𝑬
� =
⎣⎢⎢⎢⎡
𝑬𝑬𝑬𝑬𝒑𝒑𝑳𝑳
𝟎𝟎 𝟎𝟎
𝟎𝟎 𝑮𝑮𝑬𝑬𝑬𝑬𝒑𝒑𝟑𝟑
(𝟒𝟒𝑮𝑮𝑳𝑳𝟑𝟑 + 𝒄𝒄𝒊𝒊 𝑬𝑬𝑳𝑳𝒑𝒑𝟐𝟐 ) 𝑬𝑬𝑬𝑬𝒑𝒑𝟑𝟑
𝟔𝟔𝑳𝑳𝟐𝟐
𝟎𝟎 𝑬𝑬𝑬𝑬𝒑𝒑𝟑𝟑
𝟔𝟔𝑳𝑳𝟐𝟐 𝑬𝑬𝑬𝑬𝒑𝒑𝟑𝟑
𝟏𝟏𝟐𝟐𝑳𝑳 ⎦⎥⎥⎥⎤
�𝒖𝒖𝒊𝒊𝒊𝒊𝒖𝒖𝒊𝒊𝒊𝒊𝜽𝜽𝒊𝒊𝒊𝒊
� (6.3)
106
Here Fxout and Fyout are forces in x and y direction respectively, Mout being the moment
about z-axis, ux and uy are input displacements along x-axis and y-axis respectively, αs is
shear coefficient and θin is the angular displacement.
6.4 Numerical Analysis
The mechanism is capable of amplifying input displacements in parallel direction
depending on the micro-flexure length, angle made by micro-flexure and input
displacement. A code has been written to simulate the kinematics of the amplification
mechanism. Different parameters of the mechanism especially amplification factor and
output displacements at different critical locations have been analyzed for input
displacement varying from 0.1 μm to 2 μm. Three amplification factors (AF) have been
defined as given in the equations:
AF1 = U4X / U1Y (6.4)
AF2 = U8Y / U4X (6.5)
AF3 = U8Y / U1Y (6.6)
Input displacement U1y has been plotted against AF1 and U4x as shown in Figure 6-3 and
Figure 6-4 respectively. Plots show that with increasing U1y, U4x increases but AF1
decreases which depicts that the mechanism amplifies more for less displacements and is
efficient for small displacement amplification. For example, for 1 μm displacement the AF1
is 10.22. The amplification factor can be controlled by changing the flexure length and
angle.
107
Figure 6-3 Input displacement U1y vs. AF1
Figure 6-4 Input displacement U1y vs. output displacement U4x
U4x has been plotted against AF2 and U8y as shown in Figures 6-5 & Figure 6-6
respectively. Plots show that with increasing U4x, U8y increases and AF2 decreases. The
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 29
9.5
10
10.5
11
11.5
X: 1Y: 10.22
KINEMATICS
INPUT DISPLACEMENT U1y(micrometer)
AM
PL
IFIC
AT
ION
FA
CT
OR
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 20
5
10
15
20
X: 1Y: 10.22
KINEMATICS
INPUT DISPLACEMENT U1y(micrometer)
OU
TP
UT
DIS
PL
AC
EM
EN
T U
4X
108
mechanism amplifies more for small values of U4x, however with increasing U4x output
displacement U8y increases. For example, for 10.22 μm displacement the AF2 is 0.644.
Figure 6-5 Input displacement U4x vs. AF2
Figure 6-6 Input displacement U4x vs. output displacement U8y
0 2 4 6 8 10 12 14 16 18 200.5
0.6
0.7
0.8
0.9
1
1.1
1.2
X: 10.22Y: 0.6444
AM
PL
IFIC
AT
ION
FA
CT
OR
2KINEMATICS
INPUT DISPLACEMENT U4x(micrometer)
0 2 4 6 8 10 12 14 16 18 201
2
3
4
5
6
7
8
9
10
X: 10.22Y: 6.586
KINEMATICS
INPUT DISPLACEMENT U4x(micrometer)
OU
TP
UT
DIS
PL
AC
EM
EN
T U
8y
(mic
rom
ete
r)
109
AF3 and U8y have been plotted against input displacement U1y as shown in Figures 6-7 and
Figure 6-8 respectively. Graphs show that with increasing U1y, U8y increases and AF3 first
decreases more and then decreases in a linear way.
Figure 6-7 Input displacement U1y vs. AF3
Figure 6-8 Input displacement U1y vs. Output displacement U8y
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 24
5
6
7
8
9
10
11
12
X: 1Y: 6.586
KINEMATICS
INPUT DISPLACEMENT U1y(micrometer)
AM
PL
IFIC
AT
ION
FA
CT
OR
3
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 21
2
3
4
5
6
7
8
9
10
X: 1Y: 6.586
KINEMATICS
INPUT DISPLACEMENT U1y(micrometer)
OU
TP
UT
DIS
PL
AC
EM
EN
T U
8y
(mic
rom
ete
r)
110
6.5 Parametric Analysis
Parametric analysis has been performed to finalize the dimensions of the displacement
amplification mechanism. This analysis enlightened the effect of change in length and
angle on amplification factor. Having knowledge of these dimensional parameters on
amplification factor, optimization becomes possible and more efficient design can be made.
The mechanism, shown in Figure 6-1, is fixed at link 1 and input displacement varying
from 0.1 μm to 2 μm is applied at masses m1 to m4. Minimum feature size and thickness in
PolyMUMPs process is 2 μm, so width is chosen to be 2 μm and thickness is as per
PolyMUMPs fabrication process rule. Effects of change in length of micro-flexure, from
50 µm to 950 µm and angle of micro-flexure, from 1o to 10 o is discussed below.
The plot shown in Figure 6-9 depicts that with increasing angle amplification decreases. It
can also be seen ∆AF1 decreases with increasing angle and become almost constant for
higher angles. It means that increasing angle doesn’t affect AF1 very much which restricts
the range of controlling amplification factors to small flexure angles.
111
Figure 6-9 Input displacement U1y vs. AF1
Input displacement U1y has been plotted against U4x as shown in Figure 6-10. The plot
shows increase in output displacement U4x with increasing U1y. The magnitude of output
is more for small angles and becomes constant for higher angles which illustrates that for
higher angles output displacement U4x will not increase significantly which restricts the
magnitude of output displacement. The output displacement U4x is acting as an input for
middle compliant mechanism. The displacement, U4x, is orthogonal to input displacement
U1y; however, the mechanism amplifies the displacement in parallel direction.
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 25
10
15
20
25
30
35
40
45
50
X: 1Y: 14.85
SENSTIVITY ANALYSIS(ANGLE)
INPUT DISPLACEMENT U1y(micrometers)
AM
PL
IFIC
AT
ION
FA
CT
OR
1
1 Degree2 Degree3 Degree4 Degree5 Degree6 Degree7 Degree8 Degree9 Degree10 Degree
112
Figure 6-10 Input displacement U1y vs. output displacement U4x
AF2 has been plotted against U4x.The plot shown in Figure 6-11 shows that with increasing
angle amplification factor decreases. It can also be seen that ∆AF2 almost remains the same
with increasing angle initially and converges for higher angles. It illustrates that increasing
angle doesn’t affect AF2 very much which restricts the range of controlling amplification
factors to small flexure angles.
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 20
5
10
15
20
25
30
35
40SENSTIVITY ANALYSIS(ANGLE)
INPUT DISPLACEMENT U1y(micrometers)
OU
TP
UT
DIS
PL
AC
EM
EN
T U
4x
(mic
rom
ete
rs)
1 Degree2 Degree3 Degree4 Degree5 Degree6 Degree7 Degree8 Degree9 Degree10 Degree
113
Figure 6-11 Input displacement U4x vs. AF2
The displacement U4x has been plotted against U8y as shown in Figure 6-12. The plot shows
an increase in output displacement U8y with increasing U4x. The magnitude of output is
more for small angles and decreases for higher angles which show that for higher angles
output displacement U4x will not increase significantly which restricts the magnitude of
output displacement.
0 5 10 15 20 25 30 35 400.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4SENSTIVITY ANALYSIS(ANGLE)
INPUT DISPLACEMENT U4x(micrometers)
AM
PL
IFIC
AT
ION
FA
CT
OR
2
1 Degree2 Degree3 Degree4 Degree5 Degree6 Degree7 Degree8 Degree9 Degree10 Degree
114
Figure 6-12 Input displacement U4x vs. output displacement U8y
AF3 has been plotted against U1y as shown in Figure 6-13. The plot shows that with
increasing angle amplification factor decreases. It can also be seen ∆AF3 almost remain
same with increasing angle initially and converges for higher angles. It means that
increasing angle doesn’t affect AF3 very much which restricts amplification factors.
Moreover, the trends show nonlinear behavior for small angles and linear for higher angles.
0 5 10 15 20 25 30 35 400
2
4
6
8
10
12
14
16
18SENSTIVITY ANALYSIS(ANGLE)
INPUT DISPLACEMENT U4x(micrometers)
OU
TPU
T D
ISP
LAC
EM
EN
T U
8y(m
icro
met
ers)
1 Degree2 Degree3 Degree4 Degree5 Degree6 Degree7 Degree8 Degree9 Degree10 Degree
115
Figure 6-13 Input displacement U1y vs. AF3
The displacement U1y has been plotted against U8y as shown in Figure 6-14. The plot
shows an increase in output displacement U8y with increasing U1y. The magnitude of output
is more for small angles and decreases for higher angles which show that for higher angles
output displacement U8y will not increase significantly which restricts the magnitude of
output displacement.
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 20
10
20
30
40
50
60SENSTIVITY ANALYSIS(ANGLE)
INPUT DISPLACEMENT U1y(micrometers)
AM
PL
IFIC
AT
ION
FA
CT
OR
3
1 Degree2 Degree3 Degree4 Degree5 Degree6 Degree7 Degree8 Degree9 Degree10 Degree
116
Figure 6-14 Input displacement U1y vs. output displacement U8y
Amplification factor can be increased or decreased with the help of length variation
keeping all other parameters constant. The plot shows that with increasing length
amplification factor increases. It can also be seen ∆AF1 decreases with increasing length
and become almost constant for higher flexure lengths. It means that increasing length of
micro-flexure doesn’t affect AF1 for higher length values. AF1 is plotted against input
displacement U1y for different flexure lengths as shown in Figure 6-15.
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 20
2
4
6
8
10
12
14
16
18SENSTIVITY ANALYSIS(ANGLE)
INPUT DISPLACEMENT U1y(micrometers)
OU
TPU
T D
ISP
LAC
EM
EN
T U
8y(m
icro
met
ers)
1 Degree2 Degree3 Degree4 Degree5 Degree6 Degree7 Degree8 Degree9 Degree10 Degree
117
Figure 6-15 Input displacement U1y vs. AF1
Input displacement U1y has been plotted against U4x as shown in Figure 6-16. The plot
shows an increase in output displacement U4x with increasing U1y. The magnitude of output
becomes constant for higher lengths which show that for higher values of micro-length
output displacement U4x will not increase significantly which restricts the magnitude of
output displacement. With increasing micro-flexure lengths, ∆AF1 decreases and
ultimately become constant. U4x is also acting as an input for 3rd compliant mechanism
which again gives output in perpendicular direction U8y making the mechanism a parallel
displacement amplification mechanism.
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 25
10
15
20SENSTIVITY ANALYSIS(LENGTH)
INPUT DISPLACEMENT U1y(micrometers)
AM
PL
IFIC
AT
ION
FA
CT
OR
1
50
150
250
350
450
550
650
750
850
950
118
Figure 6-16 Input displacement U1y vs. output displacement U4x
AF2 has been plotted against U4x as shown in Figure 6-17. The plot shows that with
increasing micro-flexure length amplification factor increases. It can also be seen ∆AF2
decreases with increasing length and become constant for higher values of micro-flexure
length. It means that increasing micro-flexure length doesn’t affect AF2 very much which
restricts the range of controlling amplification factors to optimize micro-flexure lengths.
The displacement U4x has been plotted against U8y as shown in Figure 6-18. The plot shows
an increase in output displacement U8y with increasing U4x. The magnitude of output is
more for large flexure lengths.
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 20
5
10
15
20
25
30SENSTIVITY ANALYSIS(LENGTH)
INPUT DISPLACEMENT U1y(micrometers)
OU
TP
UT
DIS
PL
AC
EM
EN
T U
4x
(mic
rom
ete
rs)
50
150
250
350
450
550
650
750
850
950
119
Figure 6-17 Input displacement U4x vs. AF2
Figure 6-18 Input displacement U4x vs. output displacement U8y
AF3 has been plotted against U1y as shown in Figure 6-19. The plot shows that with
increasing flexure length amplification increases. It can also be seen ∆AF3 decreases with
0 5 10 15 20 25 300.2
0.4
0.6
0.8
1
1.2
1.4
1.6SENSTIVITY ANALYSIS(LENGTH)
INPUT DISPLACEMENT U4x(micrometers)
AM
PL
IFIC
AT
ION
FA
CT
OR
2
50
150
250
350
450
550
650
750
850
950
0 5 10 15 20 25 300
2
4
6
8
10
12
14
16
18
20SENSTIVITY ANALYSIS(LENGTH)
INPUT DISPLACEMENT U4x(micrometers)
OU
TP
UT
DIS
PL
AC
EM
EN
T U
8y(m
icro
met
ers)
50
150
250
350
450
550
650
750
850
950
120
increasing flexure length and become consistent for large flexure lengths. It means that
increasing flexure length doesn’t affect AF3 very much which restricts amplification
factors. The displacement U1y has been plotted against U8y as shown in Figure 6-20. The
plot shows an increase in output displacement U8y with increasing U1y. The magnitude of
output is more for large micro-flexure lengths but ∆U8y decreases which restricts the
magnitude of output displacement.
Figure 6-19 Input displacement U1y vs. AF3
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 20
5
10
15
20
25
30SENSTIVITY ANALYSIS(LENGTH)
INPUT DISPLACEMENT U1y(micrometers)
AM
PLIF
ICA
TIO
N F
AC
TOR
3
50
150
250
350
450
550
650
750
850
950
121
Figure 6-20 Input displacement U1y vs. output displacement U8y
Based on the parametric analysis, overall size of the mechanism and PolyMUMPs process
following parameters are finalized as given in the Table 6-1. Same parameters has been
used for FEA simulations and fabrication.
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 20
2
4
6
8
10
12
14
16
18
20SENSTIVITY ANALYSIS(LENGTH)
INPUT DISPLACEMENT U1y(micrometers)
OU
TP
UT
DIS
PL
AC
EM
EN
T U
8y
(mic
rom
ete
rs)
50
150
250
350
450
550
650
750
850
950
122
Table 6-1 Physical properties and dimensions of device
Parameter Value
Length of micro-flexure (μm) 250
Angle made by micro-flexure (Degrees) 3o
Width of micro-flexure (μm) 2
Thickness of micro-flexure (μm) 2
Overall size of mechanism 910x665x2
6.6 Finite Element Analysis
IntelliSuite® has been used to carryout FEA simulations. Static analysis of the mechanism
is presented here. The mechanism is constrained at the two extreme ends, same has been
shown in figure 6-1 at point 1 marked at both ends. 1 µm in-plane displacement applied to
four side masses applied along y-axis, output displacement of 7.04 µm is achieved along
y-axis, giving an amplification factor of 7.04 as shown in Figures 6-21(a & b).
123
(a)
(b)
Figure 6-21 Displacement produced along (a) X-axis and (b) Y-axis by the proposed
mechanism with input displacement of 1 µm applied to four side masses
124
Application of 1 µm in-plane displacement of four side masses will produce reactions
forces of magnitude 1590 µN along X-axis and 2320 µN along Y-axis as shown in Figures
6-22 (a & b).
(a)
125
(b)
Figure 6-22 Reaction forces produced by the proposed mechanism with input displacement of 1 µm applied to four side masses along (a) X-axis and (b) Y-axis
6.7 Experimentation
Prototypes of the mechanism are fabricated using PolyMUMPs and experimentation
carried out at MEMS Lab, Queen’s University, Canada. Detailed methodology for testing
is followed as discussed in chapter 5.To test the amplification mechanism four side masses
are to be given input displacement and output displacement sensed. Thermal chevron were
designed to provide input displacement to side masses and electrostatic combs to measure
the output displacement in terms of change in capacitance. However, during testing thermal
chevrons did not produced enough displacement that can be sensed by electrostatic combs.
126
So, design and functionality of thermal chevrons and electrostatic comb is not discussed
here. To restrict out of plane motion, supporting flexures were incorporated attached to the
ends of combs.
Probe heads equipped with tungsten needles have been used to provide input displacement
and image processing software has been used to calculate the output displacement
produced. Individual images, having resolution 2594x1944, of the mechanism were taken
at different displacements before and after application of displacement. The displacements
were measured in pixels and converted to micrometers by image processing software.
6.7.1 Kinematic Analysis
Figure 6-23 shows the fabricated prototype of amplification mechanism. An input
displacement of 1.6 μm has been applied to the side masses using tungsten micro-needles
giving amplified output displacement of 9.2 μm. Hence the amplification factor is 5.8.
Figures 6-24 (a & b) shows initial and final position of the mechanism after application of
force.
127
Figure 6-23 Microscopic image of proposed micro displacement amplification mechanism
128
(a)
(b)
Figure 6-24 (a) Microscopic image of the output before application of force (b) Microscopic image of the output after application of force
129
6.7.2 Force Analysis
An input force of magnitude 154.21 μN, applied inward individually to masses m1, m2, m3
and m4 using four probe heads equipped with four acupuncture micro-needles, produces
inward displacement of 7.57 μm, that is amplified 5.8 times producing output displacement
of 43.91 μm on both outputs ends. Force vs. displacement plots depicts a linear relationship
between the two entities as shown in Figure 6-25.
Figure 6-25 Displacement vs. input force plot of micro displacement amplification mechanism
6.7.3 Comparison of Results
A comparative study is carried out between analytical, FEM and experimental results as
shown in the Table 6-2. Results are compared and are found in close agreement. Reason
for error between experimental results and that got from FEM and analytical model is
because of difference in boundary conditions and fabrication defects.
0
20
40
60
80
100
120
140
160
180
200
0 1 2 3 4 5 6 7 8
Inpu
t For
ce(µ
m)
Input Displacement(µm)
130
Table 6-2 Comparison of analytical, FEM and Experimental results
ANALYTICAL FEM EXPERIMENTAL
AMPLIFICATION
FACTOR
6.58 7.06 5.8
% Error _ 7.2% 15.18%
6.8 Conclusions
Design and analysis of a displacement amplification mechanism consisting of
configuration 2 and configuration 3 of previously developed amplification mechanism,
having an amplification factor of 5.8 (experimental) is presented in this chapter. Parametric
analysis shows that with increasing length of micro-flexures amplification factor increases
and decrease with increase in micro flexure angle, from 1o to 10o. Prototypes are fabricated
from polysilicon using PolyMUMPs process. The mechanism is experimented and results
compared with analytical and FEA results. Comparison of results show a close
coordination.
131
CHAPTER 7. MICRO DISPLACEMENT AMPLIFICATION
MECHANISM INCORPORATED WITH CHEVRON SHAPED
THERMAL ACTUATOR
7.1 Introduction
We envisage that the proposed mechanism can be incorporated for sensing and actuating
applications in the prescribed manner. The design presents a thought process that how the
amplification mechanism can be applied as a sensor or actuator. It’s a nontraditional way
out to achieve the best possible output. From simulation point of view, we have shown the
viability of this structure of the amplifier in such configuration for use as sensor and
actuator. This chapter consists of static and thermal simulations carried out using
IntelliSuite® software of configuration 3 designed with thermal chevrons and electrostatic
comb drives.
7.2 Design Description
The proposed model consisting of chevron shaped thermal actuators, an amplification
mechanism and an electrostatic comb drives for sensing displacements is shown in Figure
7-1. The device is designed keeping in view the parametric studies conducted in chapter 3
and PolyMUMPs process.
132
Figure 7-1 Schematic diagram of thermally actuated displacement amplification mechanism
A chevron-type electro-thermal actuator has been utilized for actuating the side masses,
whereas electrostatic interdigitated comb-drives have been used for sensing the amplified
displacement. Chevron actuators are operated via Joule heating. When an input voltage is
applied to the two electrical pads connecting the two terminals of the actuation resistor, a
current will flow through the resistor generating heat due to the Joule effect. The generated
heat will propagate inside the structure and will cause the thermal expansion of the layers.
Chevron-type electro-thermal actuators consist of an array of silicon beams mirrored along
the central axis to generate unidirectional stroke. Beam pairs are designed with a pre-
bending angle β, when heated expand and buckle to produce in-plane movement. These
thermal actuators consume low excitation voltages and produce greater force and
133
displacements. Their low damping coefficients ensures high quality factor (Hickey et al.,
2003).
The displacement amplification mechanism is designed such that the two side masses, m1
and m2, move together under same driving force given by thermal chevrons defining 1-
DOF drive-mode. The comb drive is free to move in the orthogonal sense direction under
the influence of translational induced single DOF normal force. The suspension connecting
side masses m1 and m2 with the output via anchor consists of four micro-flexures of same
dimensions, two side masses, one end constraint and another end free to move. The
unidirectional displacement produced by thermal actuators is amplified in the direction
perpendicular to the direction of applied displacement.
When voltage is applied to thermal chevrons, displacement is produced which is then
amplified 20.18 times. Steady state static thermal electrical analysis is performed under
variable resistivity and voltage bias of 2V producing reaction forces of magnitude 194.20
µN and 150.91 µN along X-axis and Y-axis respectively, thus producing displacement of
0.11 µm and 2.22 µm along X-axis and Y-axis respectively. Time domain simulations of
device are carried with constant electrical resistivity, variable voltage and convective
boundary conditions. Modal analysis of the mechanism is carried out to predict the natural
frequencies and associated mode shapes of mechanism during free vibrations. The desired
mode is at frequency of 286.160 KHz. Simulation results prove the viability of the
mechanism as an amplification device with enhanced voltage-stroke ratio.
134
7.3 Mathematical Modeling
Neglecting small angle change, chevron actuator can be modeled as fixed-fixed beam.
Stiffness can be calculated by using equation 7.1 (Roark, Young and Plunkett, 1989).
Kchev=M�𝟏𝟏𝟗𝟗𝟐𝟐𝐄𝐄𝟏𝟏𝐋𝐋𝐂𝐂
𝟑𝟑 �=M 𝟏𝟏𝟔𝟔𝐄𝐄𝐄𝐄𝐰𝐰𝟑𝟑
𝐋𝐋𝐂𝐂𝟑𝟑 (7.1)
Here, E is the elastic modulus, I is second moment of inertia, L is length of beam, w is
width and t is thickness and M is beams quantity.
Chevron actuators are operated via Joule heating. The deflection of the chevron is given
by equation 7.2 (Sinclair, 2000).
Defchev = [L2 + 2L(∆L) – L cos2(α)]1/2 – L sin(α) (7.2)
Where L is the length of a single beam, ∆L is the elongation of the beam due to thermal
expansion, and α is the pre-bending angle.
When the temperature increases‚ mutually constrained thermal expansion of the two beams
pairs will result in a linear motion by the combined bending of the beams. Point A will be
forced to move in x direction. By applying the voltage difference, temperature of
combination of beams will increase, deformation occurs through bending in which free
expansion is impeded by two supports‚ which will move the point A along x-axis only.
135
The beam is subject to a force, F, and deflection, ux, that can be found using Castigliano’s
displacement theorem and by considering that bending and axial deformations produce by
total strain energy. The equation is:
u1y=u0 = 𝐀𝐀𝛂𝛂𝐀𝐀𝐀𝐀 𝐥𝐥𝟑𝟑𝐬𝐬𝐬𝐬𝐬𝐬𝐬𝐬 𝟏𝟏𝟐𝟐𝟏𝟏𝐳𝐳 𝐜𝐜𝐜𝐜𝐬𝐬𝟐𝟐𝐬𝐬+𝐀𝐀𝐥𝐥𝟐𝟐 𝐬𝐬𝐬𝐬𝐬𝐬𝟐𝟐𝐬𝐬
(7.3)
Where 𝑙𝑙 is length of single thermal chevron, A is cross-sectional area and Iz is moment of
inertia about the z-axis‚ respectively. Where α is the material coefficient of linear thermal
expansion (measured in 1/°C) and ∆T is the temperature variation, β is pre-bending angle
made by beam (Lobontiu and Garcia, 2004).
Using classical chevron actuator, the vertical displacement is negligible due to the
mechanical constraints imposed by the use of constant width beams and pre-bending angle
α and there is no need for additional constraints to confine the motion within the horizontal
plane (Varona, Tecpoyotl-Torres and Hamoui, 2009b).
7.4 Modal Analysis
FEM has been used to do modal analysis and determine the natural mode shapes and
frequencies of the device during free vibration. The natural frequencies of the device are
tabulated in Table 7-1. The desired mode is at frequency of 286.160 kHz.
136
Table 7-1 Natural frequencies of the proposed device
Mode Number Natural Frequency (kHz)
Mode 1 66.96
Mode 2 94.05
Mode 3 185.25
Mode 4 213.13
Mode 5 250
Mode 6 252.72
Mode 7 258.35
Mode 8 285.23
Mode 9 286.16
Mode 10 304.54
7.5 Steady State Static Thermal Electrical Analysis
A steady state static thermal electrical analysis is performed on the device. Material chosen
is polysilicon having material properties as shown in the Table 7-2. Resistivity is variable
depending on temperature variation as shown in the equation 7.4(Corporation, 2007).
ρ(T) = ρO (1+8.3x10-4T+5x10-7T2) (7.4)
137
where ρ is resistivity, T is temperature and ρ0 of 2x10-3
ohm.cm. Convective heat transfer
coefficient and sink temperature are taken 1 watt/(cm2 oC) and 25oC.
Table 7-2 Parametric values of variables used in steady state static thermal electrical analysis (I. Corporation 2007)
Sr.no Quantity Numerical Value
1 Density 2.33 g/cm3
2 Coefficient of thermal expansion 23.31×10-7/C
3 Resistance 0.00204-0.00365 ohm.cm
4 Thermal conduction 0.25W/cm/C
5 Specific heat 0.678J/g/C
6 Young’s Modulus 140GPa
7 Poisson ratio 0.22
8 Dielectric 4.2
The device is operated via a voltage bias of 2V that is applied to two end points of chevrons.
Thermal deformations are produced and displacement of 0.11µm is observed in x direction.
This displacement is amplified at the output to 2.22 µm giving an amplification factor of
20.18 as shown in Figure 7-2.
138
(a)
(b)
Figure 7-2 Displacement produced along (a) X-axis (b) Y-axis when a biased voltage
of 2V is applied to thermal chevrons
139
In-plane displacements have a direct relationship with biased voltages as shown in Figure
7-3. Plots show that increasing voltage from 1V to 6V varies displacement along X-axis
from 0.039µm to 3.21 µm and along Y-axis from 0.85µm to 26.37µm.
(a)
(b)
Figure 7-3 Displacement produced along (a) X-axis (b) Y-axis when a biased voltage
applied to thermal chevrons is varied from 1V to 6V
140
Displacement Amplification decreases from 21.79 to 8.21 with varying voltage from 1V
to 6V as shown in Figure 7-4. Increasing voltage of thermal chevrons provide actuation
higher in magnitude giving higher amplitude outputs but amplification factor don’t
increases with same ratio. Elastic deformations of flexures at high displacement amplitudes
cause non-linear phenomenon to occur. Amplification factor decreases with increasing
displacement making the mechanism more efficient to amplifying small actuations.
Secondly with increasing voltage, temperature of thermal chevrons increases incorporating
nonlinear effects into the joint operations and mechanism performance.
Displacement of thermal chevrons will produce in-plane displacements that are amplified
using displacement amplification mechanism. These displacements will be accompanied
by in-plane reaction forces. Application of voltage bias of 2V will produce 194.2 µN force
along X-axis and 150.91 µN along Y-axis as shown in Figures 7-5(a & b).
Figure 7-4 Plot of decreasing amplification factor with varying voltages from 1V to 6V
141
(a)
(b)
Figure 7-5 Reaction produced along (a) X-axis and (b) Y-axis by application of voltage bias of 2V to thermal chevrons
142
Increasing voltage from 1V to 6V increases reaction force along X-axis from 80.59 µN to
1519.6 µN and along Y-axis from 68.52 µN to 1545.68 µN as shown in Figures 6(a & b)
respectively.
(a)
(b)
Figure 7-6 Reaction forces produced along (a) X-axis (b) Y-axis when a biased voltage applied to thermal chevrons is varied from 1V to 6V
143
Applying a voltage bias of 2V, temperature distribution during device operation is shown
in Figure 8-7. Increasing bias voltage from 1V to 6V, temperature of device increases from
62.53oC to 1376.44oC as shown in Figure 7-8. Melting temperature of polysilicon is
1400oC, so further increase in temperature will melt the device.
Figure 7-7 Temperature distribution of proposed device at 2V bias voltage
144
Figure 7-8 Plot shows an increase in temperature with increasing bias voltage
7.6 Conclusions
This chapter presents static and thermal simulations carried out using IntelliSuite®
software of configuration 3 designed with thermal chevrons and electrostatic comb drives.
A steady state static thermal electrical analysis under variable resistivity condition for
voltages varying from 1V to 6V shows a decrease in amplification factor from 20.14 to 8.
Increasing bias voltage from 1V to 6V, temperature of device increases from 62.53oC to
1376.44oC which limits the voltages below 5V since melting temperature of polysilicon is
1400oC. Modal analysis of the mechanism shows the desired mode at 286.160 KHz
frequency. The viability of the configuration 3 of the proposed mechanism for use as sensor
and actuator is presented only from simulation point of view.
145
CHAPTER 8. CONCLUSIONS AND RECOMMENDATIONS
8.1 Conclusions
An efficient micro displacement amplification mechanism capable of amplifying
displacement with maximum amplification factor of 16 (approximately) has been
successfully experimentally determined. The proposed mechanism can be utilized in three
configurations giving different amplification factors. The design was analytically modeled
and simulated using MATLAB. Results were found in good agreement with that of the
simulated results using FEM based software IntelliSuite® and experimental results
substantiating the viability of this amplification mechanism. The parametric analysis
played a key role in addition to analytical modeling and numerical simulation in predicting
the behavior of mechanism. A variant of amplification mechanism consisting of two
configurations of basic amplification mechanism has been designed and analyzed. All
prototypes were fabricated using commercial fabrication process PolyMUMPs and tested
at MEMS Lab, Queens University, Kingston, ON, Canada.
Based on the research work presented in this dissertation, following conclusions are
enumerated below:
1. PolyMUMPs was used for the fabrication of all micro displacement amplification
mechanism prototypes. FEA of micro displacement amplification mechanism was
carried out using IntelliSuite®. Necessary masks required for PolyMUMPs were
generated in IntelliMask®.
146
2. Design of proposed displacement amplification mechanism along with its three
configurations and different materials available for micro-fabrication have been
described. Analytical model of the mechanism is developed to solve kinematics.
3. Numerical results from analytical model of the mechanism have been investigated
and discussed. Kinematic analysis has been carried out using computer codes
written in MATLAB. Results show that length and angle of micro-flexure are two
major geometric parameters that control the performance of amplification
mechanism. The amplification factor is directly proportional to the length and
inversely proportional to the angle of the mechanism. Results also show that the
amplification factor of the mechanism is restricted to a specific range of length and
angle.
4. Finite element analysis of the designed mechanism was performed using direct
stiffness matrix method, which is an implementation of FEM. The mechanism was
disintegrated in to seven elements having eight nodes. Application of distributed
force of magnitude 2000 µN and appropriate boundary conditions showed that the
input displacement is amplified 15.17 times at the output.
5. Experimental analysis of the mechanism depicts that amplification factor of 7.6, 16
and 16.14 are achieved, for configuration 1, 2 and 3 respectively.
6. Development of prototypes using PolyMUMPs is discussed. Implementation of
fabless technology along with theory and design rules of PolyMUMPs is achieved.
Results of analytical modeling and FEM are compared with experimental results.
Comparison shows a close match between the results from both techniques.
147
7. Design and development of displacement amplification mechanism consisting of
two configurations of designed amplification mechanism having experimentally
achieved amplification factor of 5.8 is also presented. Static analysis results validate
the developed model. Parametric analysis shows that with increasing length of
flexure hinges, from 50 µm to 950 µm, amplification factor increases and become
constant at length of 550 µm. The amplification factor shows a decrease with
increase in micro flexure angle, from 1o to 10o. However after 5o, change in
amplification factor is not so significant, making mechanism almost insensitive to
input displacement above 5o angle.
8. The mechanism is simple, easy to fabricate and can be incorporated with micro
grippers to amplify the displacement at the jaw tip.
9. The proposed mechanism configuration 3 designed with thermal chevrons and
electrostatic comb drives can be incorporated for sensing and actuating
applications. The design presents a thought process for researchers who want to use
this amplification mechanism.
10. Successfully achieved the goal of design, fabrication and testing of two
displacement amplification mechanisms.
11. These mechanisms can be used for industrial application like microaccelerometer,
microgyroscope, microactuator, microgripper and micro energy harvester.
148
8.2 Recommendations
(a) Incorporation of mechanism to develop an accelerometer
In future the designed mechanism may be incorporated with 3-axis accelerometer. Proof
mass displacement could be amplified 15-20 times at the output end where interdigitated
comb drives will sense change in capacitance. By incorporating the mechanism, effort may
be made to increase the performance and accuracy as the overlap area of the combs directly
effects the reliability of data acquisition. This change in capacitance could be calibrated for
displacements. This analog data can hence be digitalized and processed further with the
help of readout and operational circuitry developed for the designed accelerometer.
(b) Incorporation of mechanism to develop an energy harvester
The designed mechanism could also be incorporated as an energy harvester. Work on a
macro electromagnetic energy harvester is already underway in which permanent magnets
and insulated copper coils are planned to be used in the form of solenoid. Performance of
electromagnetic energy harvester rely primarily on change in magnetic flux within the coil.
When the magnetic flux changes, an electromotive force (e.m.f) is induced in the coil. If
the circuit is complete, the e.m.f causes current to flow through it. This e.m.f is directly
proportional to displacement permanent magnet covers so that more and more magnetic
lines are cut through the coil. Bi-stable mechanisms could be used to get output for a range
of frequencies instead of getting output only for one single mode frequency. After
successful implementation of the design concept at macro level, micro energy harvester,
could be fabricated and tested.
149
(c) Incorporation of mechanism to develop an actuator
The designed mechanism can also be used to increase the output of any conventional or
non-conventional actuator. In future two new actuators could be developed by
incorporating the designed mechanism with conventional actuators (e.g. capacitive and
thermal chevrons actuators).
(d) Incorporation of mechanism to develop a micro gripper
By incorporating the designed mechanism with a micro gripper, the combination could be
used to hold and transport micro-parts in micro-assembly, biological cells in microsurgery
and micro-particles in material science. Such micro gripper could be based on thermal or
electrostatic actuators and optical or capacitive force sensors.
150
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