dear sdd --> siddharta silicon drift detector for hadronic atom research and timing applications...
TRANSCRIPT
![Page 1: DEAR SDD --> SIDDHARTA Silicon Drift Detector for Hadronic Atom Research and Timing Applications Carlo Fiorini (Politecnico di Milano) Development of a](https://reader036.vdocuments.us/reader036/viewer/2022062519/5697bfc11a28abf838ca4236/html5/thumbnails/1.jpg)
DEAR SDD --> SIDDHARTADEAR SDD --> SIDDHARTA
SiSilicon licon DDrift rift DDetector foretector for H Hadronic adronic AAtom tom RResearch and esearch and TTiming iming AApplicationspplications
Carlo FioriniCarlo Fiorini(Politecnico di Milano)(Politecnico di Milano)
Development of a soft X-ray detection apparatus,based on Silicon Drift Detectors (SDD),
with high energy resolution and high background reduction
for application in exotic atoms researches
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Experimental requirements Experimental requirements
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Experimental requirements
Exotic atom
e.m. position
of K line
(keV)
(eV)
(eV)
Required precision
(eV) (eV)
hydrogen 6.46 160 200 ~ 5 ~ 10
deuterium 7.81 500 800 ~ 25 ~ 100
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Working principles of the SDDWorking principles of the SDD
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n
n+
p+ -V cc
The classical PIN diode detector
The anode capacitance is proportional to the detector active area
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n
n+
p+ -V cc
p+
The Semiconductor Drift Detector
AnodeThe electrons are collected by the small anode,characterised by a low output capacitance.
Advantages: very high energy resolution at fast shaping times, due to the small anode capacitance, independent of the active area of the detector
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The Silicon Drift Detector with on-chip JFET
JFET integrated on the detector• capacitive ‘matching’: Cgate = Cdetector
• minimization of the parasitic capacitances• reduction of the microphonic noise• simple solution for the connection detector-electronics in monolithic arrays of several units
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The integrated JFET
Detector produced at the MPI Halbleiterlabor, Munich, Germany
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Performances of the SDDsPerformances of the SDDs
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Quantum efficiency of a 300 m thick SDD 55Fe spectrum measured with a SDD (5 mm2) at –10°C with 0.5 s shaping time
Silicon Drift Detector performances
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Silicon Drift Detector Droplet or SD3
T=-30°C a τsh=1µs
5000 5500 6000 6500 7000EN ER G Y [eV ]
0
2000
4000
6000
8000
CO
UN
TS
Fe55
K
K
FW HM =131 eV
Canode= 50 fF
(vs. 100fF conventional SDD)
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Resolution in the line shift measurementResolution in the line shift measurement
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0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1100
200
300
400
500
600
700
800
A (cm-2)
FW
HM
(eV
)
SDD PIN Si(Li) 150 K 5.9 keV line
PIN Tsh=20us
Si(Li) Tsh=20us
SDD Tsh=1us
Spectroscopic resolution: detector comparison - 1
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FWHMmeas of monoenergetic emission line 5.9 keV1cm2 detector at 150 K
SDD FWHM=140eV shap =1sSi(Li) FWHM=180eV shap =15s PIN diode FWHM=750eV shap =20sCCD FWHM=140eV frame=1s
Spectroscopic resolution: detector comparison - 2
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Measure of the line shift – ideal case *
The case: kaonic hydrogen, 200 cm2 detection systemFor 6000 events (~ 50 pb-1 )Estimated peak position 6.3 keV, line width about 245 eV, peak shift about 160 eVDetection system based on SDDs
* No background contribution considered
222222 )245()140()200( eVeVeVFWHMFWHMFWHM SDDlinemeas
eVeV
N
FWHM
phot
meas 3.16000
10035.2/
%1160
3.1
eV
eV
shiftPeak
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Background reductionBackground reduction
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hIK
IA
h
tIA
tdr max
Timing with the anode signal
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10-2
10-1
100
101
10-8
10-7
10-6
10-5
Area (cm2)
Tdr
ift (
s)
Drift time vs. Active area
A=0.1cm2 Tdrift = 70ns
A=0.5cm2 Tdrift =350ns
A= 1cm2 Tdrift =700ns
With: = 2k/cmH = 450m
Timing resolution with SDD
2
2
HN
A
qTdrift
Dn
s
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Triggered acquisition
Kaontrigger
Concidencewindows
Detectedpulses
Consideredpulses
Kaon trigger X-ray pulseBackground pulse
dr max
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Background reduction with triggered acquisition
=number of detected kaons per detected X-ray = 103
Br=background rate = 103 events/s
Tw=sinchronization window
Tw = r x drift max = 103 x 1 s = 1ms
B = Br x Tw = 103 s-1 x 10-3 s = 1
S/B = 1/1
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Actual value of the S/B ratio measured with DEAR at DANE
using CCDs
S/B 1/100 in kaonic hydrogen
expected:
S/B 1/500 in kaonic deuterium
Signal/Background with CCD
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hIK
IA
Timing with the prompt signal from the backplane
IA
IK
h
t
t
tdr maxEstimated time resolution: about 300 ns
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Reliability of the detection set upReliability of the detection set up
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Monolithic array of Silicon Drift Detectors
Pixel area = 5 mm2
Total array area = 95 mm2
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DEAR test setup (SDD) at the BTF
BTF e+/e - beam
e+, e – shower
Pb plateTi foil
Zr foil
SDD X-ray detector (4 chips prototype)
Pb shielding
S2
X-ray lines
S1
scintillators
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Operations:
The first stage of the project of the new detector deals with the characterization of the SDD performances.
The characterization concerns the finalization of trigger efficiency and energy resolution, as a function of background environment and time window. This information will fix also the dimension of the single cell. These measurements are planned to be performed with a prototype device. The answers coming from these tests will be used for the construction of the final detector array and associated electronics with optimal characteristics.
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Beam conditions at BTF:
Energy: varying between 50 ÷ 750 MeV
Intensity: varying between 1÷ 103 e+/e- s-1 (preference is for positrons)
bunch : 10 ns; bunch frequency: 1 ÷ 49 Hz
Gate window 0.1 – 1 s
BTF run period required:
2-4 weeks in the period June 2003 - October 2003
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The detector: 1 cm2 SDD prototype
Front-side: field strips, JFET Back-side: entrance window
• 65 rings, 1 cm2 area• 280m high-resistivity + 12m epi-layer
detector presently under test at Politecnico di Milano
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Preliminary measurements
0 20 40 60 80 100Voltage [V ]
-1E-9
0E+0
1E-9
2E-9
3E-9
4E-9
Cur
rent
[A]
Leakage current ~ 3 nA @ room T
-60 -40 -20 0Voltage [V ]
-1 .2E-5
-8.0E-6
-4.0E-6
0.0E+0
Cur
rent
[A]
Voltage divider threshold voltage ~ -50V for 8 rings ( 65 rings biasshould be feasible with ~ - 400V)