УЕИÐ'ЕРЗИТЕТ У Ð'ЕОГРЕДÐ
TRANSCRIPT
DBM 03
: :. . .
, j 2004.
DBM 03 1
...................................................................................................................3
1. DBM 03 .............4
1.1. ...................................................................................41.2. DBM-PS ...............71.3. DBM 03 ...............................................................12
1.3.1. DBM 03 .........................................................121.3.2. DBM 03 .......................................................15
2. IGBT ................................................18
2.1. ................................................182.2. PT-IGBT NPT-IGBT .............25
2.2.1. ...............252.2.2. .....................................................................272.2.3. ...........................................................................272.2.4. .........................................................................................272.2.5. ..........................................................................28
2.3. IGBT ........................292.4. IGBT
.......................................................................................312.4.1. .............................................322.4.2. .............................................402.4.3. ........................................422.4.4. ......................................462.4.5. ................................................................49
2.5. IGBT...................50
2.6. IGBT ......................542.6.1. IPM ........................................................542.6.2. IGBT ....................................552.6.3. IGBT ................................................602.6.4. SiC .................................................................63
3. IGBT DBM 03 ................64
3.1. “ ” ...................................................64
2
3.1.1. ..........................................................................................643.1.2. ....................................................................653.1.3. ..................................................................67
3.2. “ ” .....................................................683.2.1. ..........................................................................................683.2.2. ....................................................................683.2.3. ..................................................................69
4. DBM 03 DBM-PS ...........................................70
4.1. DBM 03 ..................................................................704.1.1.
....................................................................704.1.2. .............................724.1.3. .............................744.1.4. ......754.1.5. ...............................................................784.1.6. ...............................................................784.1.7. IT .........................................................................................804.1.8. ...........................................................814.1.9. Incoherence Phase .............................................................814.1.10.
.................................................................................844.2. DBM-PS .................................................................84
4.2.1. DBM-PS ................................................844.2.2. ...................................................85
5. ...88
5.1. ..................................................................885.1.1. .............885.1.2.
PWM ............................................................895.2. .....................................................................93
5.2.1. DBM 03 .............................................935.2.2. ................................................................................95
6. DBM 03 .......97
6.1. DBM 03 .............................................976.2. DBM 03 ..................................................... 100
............................................................................... 103
................................................................................................ 104
1 ...................................................................................................... 107
2 ...................................................................................................... 111
DBM 03 3
Vickers 1 . DBM 03 .
,. DBM 03
, , DBM-PS .DBM 03 , .
IGBT ,. ,
IGBT ( DBM 03) .
e ., , IGBT , ,, DBM 03 .
IGBT ,.
DBM 03, DBM-PS. ,
.
,, . Ta ,
.PWM ,
.
DBM 03 , ( ) ,
.
, , datasheet IGBTDBM 03 , DBM 03 .
1
Moog Inc., Electric Drives Group, East Aurora, NY 14052-0018, www.moog.com
DBM 03 4
1. DBM 03
1.1.
DBM 03 (Digital Brushless Multiaxis) ,, , ,
( .).
, ..
( ) , ,,
. , ,, low-pass
,, PI
. IGBT ,, . .
PWM (SPWM) .DBM 03
( , ), , 1.1.
1.1. DBM 03
[A] [A] [A] 2
DBM 1.5 1.5 3.5 5DBM 2.5 2.5 5.3 7.5DBM 5 5 10.6 15DBM 10 10 18 25DBM 15 15 32 45DBM 25 25 50 70DBM 50 50 100 140DBM 70 70 127 180DBM 80 80 170 240
Power Supply DBM - PS 100 - 300
2 1s , 4.5s .
DBM 03 5
. DBM 03DBM–PS (Power Supply).
DBM 03 , DBM-PS , 1.2 1.3, .
1.2. DBM 03
300V ± 10% 180V
1.1
1.3. DBM-PS
220V ± 10%, 50/60 Hz 220V 110V( ) ±10%
50/60 Hz55W , 60W
300V ± 10%
1.1
DBM 03 RS485, PC ,
RS232 / RS485 full-duplex.
:
Autophasing- , . o (
[Nm]/[A])
( ) TTL – Drive OK (), .
, ,.
DBM 03 6
:
/ ( )
()
, (),
, ,
:
Drive OK ( )Drive Enable ( )Motor OK ( )Reference Enable ( / )
,Master, Slave.
DBM 03 , DBM-PS ,.
DBM 03 :
IT
Incoherence Phase
DBM 03 (DBM-PS ) :
.
DBM 03 7
1.2. DBM-PS
DBM-PS , ,DBM 03 . , DBM-PS
..
1.1, ,DBM-PS . ,
,. , Low Voltage Enable,
,. DBM-PS-
, DBM 03 ,, DBM 03
DBM-PS .
DBM-a ( ) 300V±10%,
220V±10%, 50/60Hz , , 470μF/400V (
PWRSPLY2 ). , ( ):
sr3 6 297.104VU E (1.1)
– .
, off-line flyback( PWRSPLY1 ). , ,
220V/110V( )±10%,, “ ”
470μF/250V. . MOSFET BUP302,
20kHz. BUP302TL2844, PWM
(current mode PWM controller). Totem-polesource sink 1 ,
CGS CGD, ,. R6 .
pull-down . VGS=0V,
DBM 03 8
1.1. DBM-PS
DBM 03 9
. R5.
TL2844 R18C32 39kHz, :
18 32
1.72[kHz][k ] [μF]
fR C
(1.2)
, OP2 Q6,PWM100A ( PWRSPLY1),
40kHz. 2, R14 R15, R17. RC
R16 C31, RC R10 C29
R8,,
. , , R8, ( )
3. (1.3)
PIN1PK
1.4V3
VV (1.3)
( 1 ), RS flip-flop,, “ ”
totem-pole , .. cycle-by-cycle .
(), 1V.
. , 1V, ,
6 “ ” 5, . ,0TR (
).:
PK(max)8
1VIR
(1.4)
, 10 .D4, R2, C10,
( .) .
DBM 03 10
TL431, Q3. ,8V .
R11 R12P1.
2.5V, ,OP1. ,
“ ” , 8V.
TL2844,,.
8V, OP1P1, .
.
:
-15V -AT, -15V(-AT)+18V(-AT)+18V(0L) -18V(0L)+8V(0L) 0L
“-AT ” , “0L” ( , ). ,
, 10V(0L) 10kHz (
PWM ),, ±18V(-AT) 158kHz (
). ( )
, PWM100A,PWRSPLY1.
PWM100A, , 10kHz , (
PWM23B).TDA2030 (
18W), 10V(0L) 10kHz.
.
,, 316kHz,
PWM , SG2524.
DBM 03 11
,. 12 11,
13 14, .SG2524 R54
C68 300kHz, (PWM100A), 3,
316kHz. C68, 0.5μs.
1 2. , ( 1 9),
( , 8) 2. 5V,
16. ,R41 R42,
4V. “ ” , 0.6V 3.5V, 45%
..
, 4 5, , 200mV ( , ).
,. 5 (
-18V(-AT), ), 4 ,R80 R86, R66,
.Q15 Q19 31 . SG2524
, 10. , ( . -18V(-AT)).
Q19 ,.
SG2524. 13 14, . 13 Z6
8V(-AT), . 26V -18V(-AT) (, -18V(-AT)).
SG2524, (26V) 14. D23,
Q21. Z13 Z14,Q19 15.5V ,
. C76,Q19.
10V. , , SG2524 ,Q21, Q19
-10V C76. “ ”Q19, .
R55 R64, R78 R79 ., ,
158kHz ±18V(-AT).
DBM 03 12
. ,, . ,
.,
, PWM “ ”. ,
, .,
, .
, IGBT
375V. , DBM-PS 3.9 , 370W. , ,
DBM-PS8.2 , 370W.
.
1.3. DBM 03
DBM 03 , , :.
1.3.1. DBM 03
DBM 03 :Full-bridge IGBT
IGBTPWM
,
DBM 03 1.2 , .
,.
DBM
03
13
1.2
. D
BM
03
DBM 03 14
DBM-PS . 158kHz “ ” (
+ ). ,
. , , ,. ,
..
158kHz- , ±18V(-AT), (
). 1:1.
( ) . 10kHz
DBM-a,
. , ,PWM .
ANALOG1. 10kHz- , 46, 11,MC33002 .
clock ( 3) D flip-flop-a MC14013, ( 2) ( 5).
D flip-flop-a ( 1) , , ,
±10V(0L). Z8 ±10V(0L).
1.2 ,
. 1.2 ,
.
DBM 03 15
1.3.2. DBM 03
DBM 03 ,.
DBM 03 :80C31
(DSP) TMS320E14Personality Card
-RS485RAM EPROMA/D D/A ,
DBM 03 1.3, .
80C31 ,DSP-a RS485 .
. , :
.
().
(, , .),
( , ).
[1].
TMS320E14 ,low-pass . DSP
, - ,(dq to abc).
DBM
03
16
1.3
. D
BM
03
DBM 03 17
Personality Card EEPROM (Electrically Erasable Programmable Read Only Memory)
( , Baud rate.). , ,
. , G2 (
CNC-a, PC-a, ).
-, (
) , DSP- .
DBM-a .,
7V 100 . , :
, 128–1024 . B 90°,
, .
C ,.
, , B, C.
DBM 12- D/A A/D,
.
IGBT 18
2. IGBT
2.1.
IGBT (Insulated Gate Bipolar Transistor) , ,,
MOSFET-a (Metal Oxide SemiconductorField Effect Transistor). 2.1 N-IGBT .
N+
N-
N+
P+
PP
SiO
Al
( PT IGBT )
2.1. N-IGBT
N-IGBT-aPT .
N-IGBT ..
, (enhancementtransistors) (depletiontransistors),
. IGBT-aMOSFET-a, ,
P
DBM 03 19
IGBT-a. ,. SFET , ,
( ), IGBT . 2.1
( , ) ( ,
), -. ,
( ) “ ”, . .
. double-implanted gate ,, IGBT-a, MOSFET-a.
, . trench-gate . “ ” ,
, “ ”, .. . IGBT
, IGBT “ ” , “ ”. IGBT,
MOSFET, , 2.1, , .
IGBT 100000 cm2, SFET 820000 [2] cm2,
0.3 – 1.5 cm2.P
, (N- ) (
).
( ). 2.1
PT IGBT-a (PT je ,), .
(- ) .
( )IGBT ( ,
- ). ,,
( , 30% “ ”).
IGBT 2.2.
IGBT 20
N+
N-
N+
P+
P-
N+
P+
SiO2
Al
+ -
+
+
+
+
+
++
+
+
+
++ +
-
-
-
-- -
-
-
-
-
---
+
+
+
+
+
+
+
+
+
+P+
P-
2.2. IGBT-a
IGBT ( N-IGBT
, P-IGBT-a ),(SiO2),
().
(P- ) .. ,
, ( ,
) . MOSFET., , IGBT MOSFET-a
P+ ( ) ., N- (
), (P+ )P+ ,
. ,, . P+
N- ( PT IGBT-a). N-
( , ),
,
DBM 03 21
. , .MOSFET-a, IGBT-a , ,
. je ,
RCE(on) ( . RDS(on) MOSFET-a) IGBT-aMOSFET-a. 95% MOSFET-a
. ,,
, .IGBT-a MOSFET- . MOSFET-a
, ,VDS, [2]:
DS(on) DS(BR) 2.4,2.6R k V (2.1)
k –
[3], 1.6 .MOSFET 1000V, IGBT-a
.
, , eIGBT-a.
IGBT-a , , ( N-IGBT-a) (
). (MOSFET-a) - .
, , ,, .
,IGBT-a . “ ” ,
“ ” . 2.3, .
,. “ ”, “ ”
,. “ ”
,, IGBT
.
P+, (latch-up
e ),. ,
.
IGBT 22
2.3. “ ” IGBT 3
. Latch-up 2.4.
N+
N-
N+
P+
P-
N+
P+
SiO2
Al
P+
P-R
R C
R
GC
B
D
CGE
CCE
G
2.4. IGBT-a
3 [3]
DBM 03 23
2.4 IGBT. latch-up
IGBT , . ,N-IGBT, N-MOSFET ,
NPN .(N- ), P ( ),
. ,,
RB . IGBT- P+ , N- , P , PNP
. RD ,PNP . RG ( , ) .
CGE ,SiO2.
. CCE PN.
IGBT-a, ,. CGC Miller- .
,SiO2 . Miller-
, . 2.4 , , 2.5.
RD
CCE
RBCGE
CGC
RG
2.5. IGBT-a
2.4 PNPN : P+ , N-, P , N+ . O PNPN
( 2.5).
IGBT 24
Latch-up .IGBT ,
. latch-up , NPN, :
PNP NPN PNP NPN T E1, ,M (2.2)
:PNP - PNP
NPN - NPN
T -
E -M -
NPNIGBT-a,
P ( . RB ), NPN . ,
, (2.2) . IGBT-a , . latch-up .
. latch-up., dv/dt IGBT-a,
,NPN .
IGBT-a ( NPN) . .
latch-up. latch-up, ,IGBT-a, ,
dv/dt .Latch-up
, RB. ( 2.2 2.4 ),
N+ . ,, NPN .
, PNP ,. ,
PNP latch-up ,, VCE(on) .
latch-up IGBT, latch-up-a
15 .
DBM 03 25
2.2. PT-IGBT NPT-IGBT
2.2.1.
,IGBT , : PT (Punch Through) NPT (Non PunchThrough) . PT NPT
N+ ( 2.1) PT, NPT . ,
. PT , ,
P+ N-. MOS
- . PT-IGBTIGET (E : epitaxial) .
PT , NPT-IGBT-aN- MOS -
, ,P+ .
,P+ . N-
, NPT IGHT (H : homogeneous)., , PT-IGBT ,
NPT-IGBT .
. , ,P+ N- ,
.,
PT ,VCES ( . 600V IGBT
80μm). P+ ,, . ,
, , “ ” ,
. , P+N+ , . .
, “ ”. , .
IGBT 26
(minority carrier lifetime control).
, X - ,.
, . ,.
, ( . “ ”ZVS-a). ,
VCE(on) , ., NPT ,
P+, , ,. , NPT
., P+
, VCE(on) .
latch-up. ,
latch-up NPN(2.2) .
PT IGBT-a, PNP ( P+ ), latch-up
( . N-N+ ) PNP-a.
,,. 40-45%
PT-IGBT-a., PNP
NPT-IGBT-a, P+. P+ ( E 0.5 )
PNP ,PNP-a,
.NPT-IGBT 20-25% .
P+ , 600V- PT-IGBT 400μm, 100μm 600V- NPT-IGBT-a
( 1μm, 100μm), . NPT-IGBT-a 25%
PT-IGBT-a,PT NPT .
DBM 03 27
2.2.2.
, NPT ,, VCE(on) , PT .
, VCE(on) NPT-IGBT, . , VCE(on)
PT-IGBT .
,. ,
,,
, .VCE(on) (
), , ,PT-IGBT
.VCE(on) , PT
VCE(on) NPT .
2.2.3.
.PT-IGBT , , ,
NPT-IGBT-a. NPT-IGBT
T=125°C, PT-IGBT. NPT ,, , PT .
P, PT.
2.2.4.
a NPT-IGBT, PT-IGBT . o
NPT (avalancheenergy) PT . NPT
IGBT 28
PNP ,. NPT
IGBTNPT , PT .
2.2.5.
PT, NPT .(reverse recovery current) , ,
, , ,. ,
NPT ,, PT 2.2.3 .
NPT-IGBT ( VCE(on) ),
. ,, ,
RCE(on) (). ,
..
PT-IGBT , , ( VCE(on) ),
. PT-IGBT,
,. , ,
.,
VCE(on) , .
DBM 03 29
2.3. IGBT
N-IGBT- 2.6 .
IC
VCEVGE0< VGE(th)
VGE1>VGE0
VGE2>VGE1
VGE3>VGE2
VGE4>VGE3
VGE5>VGE4
V(BR)CES
IGBT
IGBT
2.6. N-IGBT-a
IGBT ( 2.6).
,, VGE .
VGE . , VGE(th) ,. (VCE > 0),
.VCE , . VCE , ,
V(BR)CES (BR: breakdown) ,, . PIN : P+ / N-
/ N+ ( 2.1)VGE , VGE(th) ,
. ,, :
.
IGBT 30
( 2.6)VGE . ,
( ),. ,
VGE , . VGE,
:
Cfs
GE
dIg
dV(2.3)
2.7, .
2.7. N-IGBT
( 2.6
IC
VGE
VGE(th)
Cfs
GE
dIgdV
VCE , . IGBT,
. IGBT, . ,
. ,IGBT ,
, . .
),VGE , VGE(th) . ,
, ., VCE( n) ,
. ,, PT-IGBT-a ,
NPT-IGBT-a .
DBM 03 31
( 2.6) V < 0 . PN
.IGBT 15V.
,. NPT-IGBT
,
. PT-IGBT , ,N+ .
CE
2.4. IGBT
IGBT ,
2 IGBT 6MBI 30L-060
.
,. ,
., .
,,
. ,
.
,. ,
,.
IGBT ,.
FUJI ELECTRIC, DBM 03 .
IGBT 32
2.4.1.
, VCES
,
, VGES
, VGEM
M
IC1 IC2
IC1 IC2
25°C , IC2
25°C.
, .
..
- . 80V, 20V.
.,
,Miller- .
/ VGE , ( ), /
.- ,
( ),
.
, (junction temperature). ,
. IC1
DBM 03 33
, . IC2,
, ICM
,
( 2.6
25°C .
. :
) .
latch-up . ,
ICM
,
,
, - ,,
.
. ICM “ ”.
, ICM,
latch-up-a.
.
, .
.
. ,, ,
, VCE(on) , .
IGBT 34
e: ILM , FBSOA, RBSOA SCSOA
( ),
,- , , .
ILM
. IGBT-a ( , .).
2.8 .
+
IGBT
VCC
2.8. IGBT
, VCE( ) VCC .
, ( 2.1) IGBT-a, “ ”
IGBT-a. ..
,( 2.4) .
NPN , latch-up IGBT-a ( PNP). ILM , ,
latch-up-a, RBSOA .
RBSOA (Reverse Biased Safe Operating Area), ., VCE
IC , ,.
VCE “ ” , .VCE .
DBM 03 35
,,
IGBT-a 4
.RBSOA
, VCE
. 2.9 ( ).
2.9.
. RBSOAlatch-up-a . RBSOA
PNP .
FBSOA (Forward Biased Safe Operating Area), .
IC , ,. ,
( 2.8). 2.10 .
2.10. IGBT-a 4
4 [5]
IGBT 36
FBSOA. FBSOA RBSOA,
., V
., .
. 2.11 .
2.11. 5
, ,
.
SCSOA (Short Circuit Safe Operating Area),CE
IC , ,. IGBT
,. IGBT
10μs. IGBT ,:
,
,
L
+VCCVCE
RG
CGC
CGE
IC
5 [5]
DBM 03 37
., V
,, 2.12
, ,
CE VCC . , VCE (
,), VCC . VCE ,
Miller- CGC , . .
, ,,
ICP ( )., ,
. .,
, ., tw . ,
, VCE VCE(pk) ( VCE = VCE(pk) - VCE L dIC /dt ).
SCSOA.
,( Q1).
, .,
Q1. L1 L2 ., “ ”
( 2.6) , VCE(on) VCC .
( . dVCE /dt) . , Miller- ( , , VCE ,
VCE) ( VCE = VCE(on)) .
(), .
, ,, ,
.
SCSOA ,, tw 10μs .
IGBT 38
+
Q1(ON) Q2(OFF)
Q3(OFF) Q4(ON)
CGE
RG
L2VCC
VCE
CGC
L1IC
2.12. 6
,
. ,
(avalanche) , EAV
25°C,
,. ,
,. ,
. ,.
, .
6 [5]
DBM 03 39
.,
, EAS . : , ,
.
, R JC , C=25
- , -. NPT-IGBT
PT-IGBT.
, PD
, TJmax ,
T °C :
Jmax CD
JC
T TP
R(2.4)
25°C, TC (2.4).
,. ,
.
,, .
, TJ
10°C,
, TSTG
IGBT 40
2.4.2.
, BVCES
-
,, .
VCES
. ,,
,
. BVCES
B . ,,
. ,BVCES .
, RBVCES
. , , -PNP ( 2.4)
15V, .IGBT
VCES .. 2.13
.
2.13.
Q1 D1
Q2 D2
L1
L2
Lopt
VL1
DBM 03 41
. ,
. je Q1 , Q2 . ( L1 L2 ). Lopt
Q2 , D1. VL1 , L1 ,
. VL1- Q1.
PNP ,, . IGBT-a.
, VGEth (th: threshold)
-. MOS
,,
IGBT- ,, -
,
. ,
- . –12mV/°C . : - .
25°C.
, VCE(on)
. 25°C,
( 125°C). ( ) VCE(on)
, - .
VCE(on) . VCE(on) ,
VCE(on) .NPT-IGBT ,PT-IGBT .
,,
PT-IGBT-a.
IGBT 42
, ICES
. - - .,
25°C,
, -.
.4.3.
2.5
( 125°C). .
, IGES
2
IGBT ,.
,, .
- - :
, Cies
ies GC GEC C C (2.5)
IGBT-a,;
).
, (
, .: ,
.
DBM 03 43
, Coes
,e ,
-- :
.
oes CE GCC C C (2 6)
,
.
.,.
), Cres
,
CGC 2.5
:
(Miller-
,. .
: ,
2.14
.
. ( latch-up, .) .
, VGEP
, ,- (
), . ( ).
, .
VGE QG “ ” , 2.14 . ,
.
, 2.14 .
. , VGE QG
VGE t ( QG=IG t). , 2.14
VGE , .
IGBT 44
VGE[ V ]t4(VCE1) t4(VCE2)
QG[ nC ]
VGEP
VG(th)
t1 t2 t3(VCE1) t3(VCE2)
VCE1 VCE2
VCE1< VCE2
VGG+
QG1 QG2 QG3 QGtot1
VGG -
QG - 0QGtot2
2.14. VGE , QG
:
0 t1 ( )
VGG+, (
, - . -
, VGEP , ,
2.6
t=0
), .
, VGEP , , . . t1 ,
QG1.
t1 t2 ( )
t1, -
( ). VGE .
. 2.12,
Q2 Q4. Q4, ( VGE
DBM 03 45
)., .
( , 2.14), (
2
.
, ).
( 2.6
), . t2 .
VGEP=Iopt / gfs . ,. , VCE
, 0 t2, CGC ( VCE).
CGC 0 t2, , ,
CG . t2 ,
, QGE .
t t3 ( y )
t2
, - (
, CGt2 t3 . , VCE ,
CGC , “ ”.
t2 t3 ( QG3 - QG2 ) ,CGC.
, QGC .
t3 t4 ( )
t3 ). VCE VCE = VCE(on) = RCE(on) IC .
VGE .,
- VGG+ . t3 ,
VGG+, VGEP .
, RCE(on) , VGE ,
, Qtot,. , Qtot,
, QG.,
( 2.14).
IGBT 46
, . . VGG- ( 2.14).
“ ”G- .
.
.4.4.
, ,,
( ,, ,
- 10% , 10% .
10% 90% .
ton .
Q
datasheet-a,,
-, ,
- . ,,
datasheet-a .
2
.
,.). ,
.
,.
, tdon
, tr
,
DBM 03 47
- 90% 90%
.
90% 10% .
toff .
. 2.15 .
,,
2.1
, tdoff
,
, tf
,
( ), Eon2
,
+VCC C
Lopt
2.15. ,
0 . .
- ,
IGBT 48
5% ,- 5% VCE
.
( ), Eon1
,.
2.16 .
P1 P2, Lopt.
, , D .
, ,
.- , -
.
(2.3)
.
+
P1 Lopt
P2VCC C D DZ
2.16. ,
DZ.
..
, Eoff
90% ,
, gfs
, 2.7 .
VCE , .
DBM 03 49
, VGEP ,
BT-a , .
,, R JC,
, R CH.
(junction)ase) ,
, TC , R ,
, R CH
(case)eatsink) ,
, TC
, ), ( , ,
, .).
.IGBT
,IG
2.4.5.
, R JC
(c.
,JC
, PD , :
JC J C JC DT T T R P (2.7)
(h
.
, TH , , PD , :
CH C H CH DT T T R P (2.8)
,(
IGBT 50
IGBT ,,
, ,.
.5. IGBT
, :
(self-commutated), .
2
,. ,
,
2.1
2.1. (self-commutated)
GTO BJT(Gate Turn-O tion Transistor) ff Thyristor) (Bipolar Junc
MCT(MOS Controlled Thyristor) Darlington Transistor
FCTh(Field Controlled Thyristor)
SITh(Static Induction Thyristor)
(M ldMOSFET
etal Oxide Semiconductor FieEffect Transistor)
MTO(MOS Turn-Off Thyristor) (Field Controlled Transistor)
FCT
EST(Emitter-Switched Thyristor)
SIT(Static Induction Transistor)
IGTT(Insulated Gate Turn-off Thyristor)
IGT(Insulated Gate Thyristor)
(Injection Enhanced (insulated) Gate IEGT
Transistor)
IGCT(Integrated Gate- utated Thyristor) (Insulated Gate Bipolar Transistor) Comm
IGBT
DBM 03 51
.
) IGCT- ,. IGCT- ,
.
IGCT. 100MW ( ,
30% , ,50MW- (STATCOM),
/ (Intertie), 4kA (
GTO-a 6μF- ).
, ,IGBT . IGBT
( IGBT 6.5kV 600 ), ,
IGBT MOSFET ,
Darlington- IGBT-a.
IGBT-a (BJT)IGBT-o , BJT-
.IGBT- , ,
( BJT-a) ().
,, ( 20 ,
). 200 ,â 10 ,
. , ,,
,. ,
.
, Darlington-a. Darlington-
- . , , VCE(on).
, .
,.
,.
, IGBT.(storage time)
IGBT 52
, IGBT, , (). ,
.,
450kHz. ,
IGB -a MOSFET-a,
NPT-IGBT-a, ,“ ”. , IGBT, ,
. IGBT-alatch-up , .
, IGBTDarlington-e .
MOSFET IGBT .o ,
IGBT-a MOSFET- . IGBT,MOSFET-a.
IGBT-a. IGBT-a ,, MOSFET,
- . ,MOSFET-a , ,
(2.1) . ,IGBT-a MOSFET- .
, IGBT- “ ”,
, , ..
,
. MOSFET, ,. MOSFET
IGBT. IGB -a, MOSFET. , ,
, , ., , ,
, MOSFET-a. ,, .
, IGBT. , MOSFET
300V, 200kHz. IGBT , ,
1000V, 20kHz. ,
, : ,, , , .
DBM 03 53
o 2.2 .
2.2.
BJT Darlington MOSFET IGBT
,
[ns] [μs] [μs]
~1 MHz ~100 kHz <100 kHz <100 kHz
,
,,
SOA
IGBT
). ,
.. ,
(
,,
,
.
IGBT 54
2.6. IGBT
IGBT :
( ,
(VCES),
, :
IPM (Intelligent Power Modules)
, IGBT-a
2.6.1.
IPM , IGBT-a , ( IPM ),
a a .IGBT-a,
. IPM(ASIPM=Application Specific IPM). Semikron-
o S
)
,
,( “chip-on-chip” “silicon-on-insulator”)
IGBT-a
IGBTHVDC
IPM
KiiPPACK (Semikron integrated intelligent Power PACK)., PCB ,
. SKiiPPACKAC , ,
DC ., , ,. SKiiPPACK (TTL
CMOS ). , ,SMPS-a, .
SKiiPPACK 2.17, .
DBM 03 55
2.6.2. IGBT
, IGB
.
600 . , ,“Infineon Technologies” ( Siemens-a
2.17. SKiiPPACK
6.5kV,
). NPT ,
.,
. ,NPT-IGBT-a, “ ”
NPT .. , ,
NPT , :, ,
., 3kV DC,
,. , DC
4.5kV ( ), 200nH
dI/dt 10k /μs . DC 4.5kV, ( repetitive turn-off )
, 4.5kV. , 10μs,
125°C. 2.18 2.19, ,, ,
IGBT 56
, ., .
2.18. 7
6.5kV, , HVDC
, 2.5kV- (
2.19. 7
). ,
7 [15]
DBM 03 57
3 4 ,.
8kV- IGBTABB ( 10kV- IGCT-a).
17.5mm x 17.5mm , 2.20 .
2.21 ,
)
, ABB-SPT-IGBT (Soft Punch Through) .
2.20. 8kV- 8
(N-Base
2.21. ,8kV- IGBT-a 8
8 [16]
IGBT 58
SPT ,
., , ,
. 2.22 ( )
2.23 125°C, .
9
,SPT ,
, 25°C . 125°C, 7.5kV, 5mA.
2.22. 25°C9
2.23. 125°C
9 [16]
DBM 03 59
,, 125°C 5.1V ,
50A. 2.24 2.25 , .
,L ,
.5kV.
2.26
” ” , S
5
2.24. TJ=125°C( VCC=4200V, IC=100A, VGE=15V, LS=6μH ) 10
2.25. TJ=125°C, dI/dt=70A/μs( VCC=4200V, IC=100A, VGE=15V, LS=6μH ) 10
,.
, , SOA(safe operating area), .
10 [16]
IGBT 60
.6.3. IGBT
IGBT ( ),
,
,. ,
tr
2.26. 8kV- IGBT-aTJ=125°C ( VCC=4500V, VGE=15V, LS=6μH ) 11
2
.
., , ,ench-gate ,
.2.27, .
“ ”, . .,
,. ,
30%. ,,
, latch-up ,, .
,.
11 [16]
DBM 03 61
2
N+ N+
N+ POLY PP
PN+
N-
SiO
2.27. Trench-gate IGBT-a ( TIGBT )
, IGBTitsubishi, CSTBT (Carrier Stored Trench-gate Bipolar Transistor)
. Mitsubishi CSTBT, 1200V 1400 . a 2.28
M
, ,.
CSTBT-a N (Carriertorage N layer) ,
,
CSTBT
sP (P base layer) N- (N- layer).
IGBT ,P+ .
. CSTBT-a, ,N , (P base layer)
(Carrier storage N layer)(N- layer). P+
(P base layer). ,N (Carrier storage N layer),
(N- layer).CSTBT-a
trench-gate .
IGBT 62
12
VCES=600V 50A . CSTBT-a
2.29.
-a 12
600V- 720V, .
2.28. CSTBT
2.29. CSTBT
12 [17]
DBM 03 63
CSTBT-a (
125°C 1.15V, 0.3–0.4V TIGBT-a, CSTBT
.
-a 13
CSTBT TIGBT.. trade-off
,MOS .
.6.4.
, -.
SiC, 600°C. SiC 10
, 10 . SiC-
100 ,
2.30
). ,CSTBT-a 25°C 1.22V,
2.30. CSTBT
O
2 SiC
1000 ,. 2001.
Schottky SiC-a,FET .
13 [17]
IGBT DBM 03 64
3. IGBT DBM 03
IGBTDBM 03 ,
. “ ”
), “ ” ( -AT ).
“ ”
( +AT
3.1. “ ”
3.1.1.
PWM79A, .” , . ,
1.3.1“
. Siliconix-Si9910. MOSFET
, ,, “ ”
.
. VCE
( ), CMOS . “ ”
high-side ( . “ ”) ,charge pump bootstrap .
. 1
VCE . , 2μs ( ) 2,
, VCE . VCE
,
, . 1 ( 8.3V 10.2V),
2, . 1 , 6.
2. (Schmidt) ,
DBM 03 65
. ,VCE . ( ),
( 3). ( , bootstrap ),
,
( ).
.1.2.
( V) .,
.”
PWM80A ( PWM80A
2 ().
( ). .
3 . 18V.
4VCE , . dVCE /dt . (DBM- ), .
5 ( ).
“shoot-through” ,
0.8V, 4 5 .
6 (ground) . 7 pull-down 8 pull-up
7 8 , ( )
( )..
3
“ ”
“), .
3 . , 19 PWM80A, OP302( ANALOG2 )
V.OP30 , 19 PWM80A -AT (
PWM80A -AT).“ ” 40106D ,
( 15V(-AT)).9, Z4,
T10. 23, PWM80A,0V(-AT). 23 T27 ( ANALOG2) ,
IGBT DBM 03 66
-6.2V(-AT), 25, PWM80A. T27. D82 D83, D84,
1, PWM79A, “ ” “ ”. “ ” .
“ ” , T27 “ ” .
“ ” , ,( . “ ” ) 1, PWM79A.
PWM79A“ ” . 1 (0V),
LM293D , 10V.
,C147, 4,
PWM79A ( ANALOG2). -12V ( )
10V.. DBM 03 5.2μs.
, 15V, T1. T1,
2, Si9910, 15V. T2, C4 C13.
“ ” VCE “ ”( 13, PWM79A),
, 5, Si9910. ,, VCE ,
. VCE 2.5V.
T1, T5, T2C2 C150 ( ANALOG2).
“ ” VCE “ ” ,VCE , 1, Si9910.
VCE ,8.3V 10.2V.
2, Si9910, ( 7.5V), 8, Si9910,
11V â. T3
T4 ( D4,,
PWM79A), 14, PWM79A,.
“ ” . , T7 T8( T6, PWM79A), Darlington
, T7 “ ” D4.
DBM 03 67
3.1.3.
“ ”PWM80A ( PWM80A ), .
23 . , OP30 , 19 PWM80A , R30, 15V.
( 0V). , , T9, T10
Z4, “ “ T27( ANALOG2), . D82,D83 D84, 15V (“ ” ) 1 ( 15V R1),
PWM79A ( PWM79A ). 1 (15V)
LM293D,10V. , (
C147 ), -12V.
, LM293D., 10V (
), 0V ( ). D1,
T1. , 2, Si9910,0V. 8,
Si9910, 1.3V, T3, T4 ( . D4,PWM79A). ( . )
T7 T6 ( . T8, PWM79A),Darlington ,
“ ” , .PWM79A,
PWM79A. Z2,R13, R14 R15,
LM293D. 10V. -12V,
2, Si9910, 0V, “ ” .
IGBT DBM 03 68
3.2. “ ”
.2.1.
“ ” ,
3
PWM78A, ., . -AT ., “ ” ,
“ ”V) .
,.
“ ”4, PWM80A ( PWM80A
Si9910 .
3.2.2.
(
1 ), 1, PWM78A. “ ”
, “ ” .PWM80A. ,
19, PWM80A ( . 19 15V),
40106D ( 10) 0V ( ).R33 40106D
3. ( 4) 15V ( ), 14,
PWM80A. (15V) 1, PWM78A,
C153 ( ANALOG2), 4, PWM78A.
,LM293D. 6.2V.
C153 ( ),
)
15V ( ).C153 0V 6.48V (6.2V +
, 5.2μs. 15V “ ”
, “ ” .
DBM 03 69
3.2.3.
4,PWM80A
“ ” 1. , 14, PWM80A (
1, PWM78A) ( 0V), C153 ( ANALOG2).
- ), 0V, D1
T1. “ ”
5.8V (6.2V
, “ ” .C153 D2,
..
DBM 03 DBM-PS 70
4. DBM 03 DBM-PS
DBM 03, DBM-PS .
.
( , , ).
4.1.1.
DBM 03
( 15V(-AT), -12V(-AT) -12V(+AT)), (
15V(0L) -15V(0L)).
,
4.1. DBM 03
DBM 03 :
IT
Incoherence Phase
DBM 03 71
15V(-AT), -12V(-AT) -12V(+AT)
PWM82B, ( PWM82B).
15V(-AT)
T3, OP10 ( ANALOG1
R35, R37, R38, Z5,LM293D. 13V(-AT),
-12V(-AT),T3 D8, T1 D4 D6.
), DBM-a
. , T1 ” ” 30, PWM82B 0V(-AT). 30, PWM82B,
PWM80A, ( ANALOG2,ANALOG3 ANALOG4, ). , 1N4148,
33, PWM80A. ,PWM80A. 0V(-AT)
33, PWM80A, T16.D3, D6, D9 14V(-AT), .
40106D13.5V(-AT),( 0V(-AT)). IGBT-a,
, 3. , 15V(-AT),
IGBT . -12V(-AT) -12V(+AT).
-12V(+AT)R2, R4, R5, Z1,
LM293D.-12V(+AT) -9V(+AT). ,
OP6 ( ANALOG1), D10 , 7.5V (
-12V(-AT) ). -12V(-AT), T1 T3,
IGBT.
-12V(-AT)R9, R10, R12, Z2,
LM293D.-12V(-AT) -9V(-AT).
-12V(-AT), T1 T3, a IGBT
.
DBM 03 DBM-PS 72
15V(0L) -15V(0L)
DBM-a, ( ANALOG1).
15V(0L)R117, R122, R123, Z24,
LM293. 15V(0L) 12V(0L).
-15V(0L), T31,OP32. OP32 30,
WM82BP , 0V(-AT). PWM80A, ( ) IGBT
DBM , . -15V(0L)
Z23,LM293.
T31,
( .
, IGBTPWRSPLY2
R114, R119, R120,
-15V(0L) -12(0L). -15V(0L),
OP32. , ,IGBT-a, DBM .
4.1.2.
, )..
( , )
R56, R57, R145, P3.
M293
, “ ” 375V. ,
375V, ,
0V(-AT).
.
L , 5V TL431.
P3,
Q31, D35 D36.
DBM 03 73
IGBT-a 16V, IGBT. , 158kHz- ,
±18V(-AT), C89, IGBT 360V. , D33 D34,
C88 C89, . charge-pump .C89 10V.
( . 360V),Q31. Q30 Q32
( D35 D36) Darlington .IGBT-a -9V(-AT)
C89, IGBT .
( 36kW),
,
. (,
). ( , ) ,
, ,. ,
0.564 ( 4.2.2).
PWM82B ( PWM82B, ).LM293D.
10V Z3, ( )
330k , 120k R21. ,, .
10.2V(-AT) ( 395V),
-12V(-AT), D2 .T2 ( D11), T1 ( D6) , T5 ( D13). T2,
,. T1, 30,
LED (power OK)
PWM82B, 0V(-AT).IGBT , 4.1.1 .
T5, OP9 ( ANALOG1),DBM
. , 395V,
IGBT .,
350V.
DBM 03 DBM-PS 74
4.1.3.
. DBM 03,
.
WM82BP .LM293D.
3,R31 R33 Z4
.6V(-AT). (
200V), -12V(-AT), ..
, LED (powerK), ( DBM-a)
R29, R31, R3
5)
330k , 120k R21. , ,.
5.18V(-AT) (
IGBO
. ,T6, OP11 (
ANALOG1). DBM-a.
, 245V.
DBM-a
DBM 03
Low Voltage Enable DBM 03 .Low Voltage Enable, OP8 (
.
ANALOG1) “ ” 11, PWM82B, 0V(-AT).
“ ” 0V(-AT),.
,42V LM293D. ,
1.35V(-AT) ,
DBM 03 75
( ) 330k , 120k R21.
R125R126) 17, PWM80A
1.08V ( 42V ),
-12V(-AT), . ..
, 62V.
4.1.4.
PWM80 ( ).IGBT ,
. ( V) .
,.
( V), (, 18
D87). ANALOG2( , .V
“ ” V,V ( “ ” ). ,
IGBT . ,
“ ” V,V ( “ ” ).
“ ” , . 19, PWM80A, 0V(-AT).
40106D 15V(-AT),R32 R33. “ ”
, 17, PWM80A,
3,
( “ ” ). , . 17 . T8 ,
“ ” R29Z3. C13 R32
15V ( ).
LM293D, 5.1V(-AT),Z9. 6.5V(-AT),
15V(-AT). 140174. 40174 6 D flip-flop- . flip-flop-
D1, D2, D3, D4, D5 D6,Q1, Q2, Q3, Q4, Q5 Q6. 16 (VDD) , 8
DBM 03 DBM-PS 76
(VSS) . Flip-flop- 9 (CK), 1 (CL).
, 15V(-AT).D flip-flop-a ( 13), flip-
flop- D13 R79. 13 12, LED L4
T18. T18 “ ” 37, ,
PWM80A, 0V(-AT), 35 37 ( ANALOG2).
37 0V(-AT), T16,D11. D11
14V(-AT), D3, D6 D9.40106D 13.5V(-AT),
( 0V(-AT)).IGBT-a ,
, 3. T18OP26 ( ANALOG2).
T21 LED L7,DBM-a.
DBM-a, R95. ,“ ” V, V (
“ ” ),. LED , PWM80A,
IGBT- ( .). , , “ ”
V , ( 17, PWM80A)T8, C13. ,
,. C13 ,
“ ” IGBT- . “ ” .
“ ” V, . 19, PWM80A, 15V(-AT).
14, PWM80A, 15V(-AT). “ ” , D87 (
18, PWM80A, ANALOG2) ( “ ” ).
, . D87 .D87
. T6, T7( PWM80A). R24
C8, 15V(-AT).C8
LM293D,5.1V(-AT). C8 6.5V(-AT),
15V(-AT). 11, 40174 ,
DBM 03 77
flip-flop-a, flip-flop- , 40147.flip-flop-a ( 10) ,
LED L3 T18. T18 “ ” 35, 37, PWM80A, 0V(-AT),
T16 D11. D11 14V(-AT), D3, D6 D9.
40106D 13.5V(-AT), ( 0V(-AT)).
IGBT-a ,, 3. T18
OP26 ( ANALOG2).T21 LED L7,
DBM-a.DBM-a, R95. ,
“ ” V, V ( “ ” ),
. LED , PWM80A,IGBT- ( .
). , , D87 (ANALOG2) , T6 (PWM80A). T7, C80V(-AT), .
( .0V(-AT)), .
,LM293D, “ ” 0V(-AT) (
D4 D5). ,. (
, IGB ,),
40174 LED .,, 40174 LED .
. ,, , U V, ,
( “ ” “ ” )
, . “ ”, “ ”
., IGBT.
,, .
DBM 03 DBM-PS 78
4.1.5.
..
PTC .DBM 03
PTC , ( .Drive Enable ).
LED OVT.,
. Drive Enable,,
).
, Moog.inc . 155°C ( F),
( ,
4.1.6.
DBM-a PWM82B (). DBM
. PTCtermo switch, DBM
. PTC( ) ,
.DBM . PTC- DBM
80°C, a
80°C ,BT-a 130°C . PTC ,
5. (
DBM . , ,,
IG
),
.5,
PTC-a, R47,Z2, R48.
Z7 4.5V. ,
( -AT),
DBM 03 79
0V(-AT). -12V(-AT) (
+15V(-AT)) , D7,-AT ( . 0V(-AT))
R53.
, . PTC 80°C, PTC-a
2V(-AT), 15V(-AT). 15V(-AT)
80°C ,
. ,M5
R48 ( -5.1V(-AT)), PTC-a (15V(-AT)) .
.,
-1
Z6 D7, 9.6V(-AT).
(-12V(-AT)) , 4.5V. ,
M5-12V(-AT), .
T1, D6, 4, R54.1 “ ” 30, PWM82B
0V(-AT), IGBT, 4.1.1 .
4, LED.
OP13 (
,
ANALOG1, ),DBM 03
. DBM-aLED ,
DRV OVT.DBM 03
. ANALOG1,, SA555 NTCJT1. , PTC .
, , ( 3)
:
NTC 103 130
1.442
fR R C
(4.1)
DBM-a 47, J11. DSP ,
. , DSP. ,
DBM 03 DBM-PS 80
, DSP.
DBM 03, , DBM 03
.
4.1.7. IT
. DSP,
( = RT CT), RT, CT .
.,
.. ,
IT .. IT
PTC ,
. ,, ,
.,
, .
,.
,,
DBM- PC.
( ), ., ,
,IT ( Drive Enable).
IT. ,IT PC .
[1]. ,.
, , ,FA [1].
DBM 03 81
4.1.8.
. ,DBM Drive Enable.
DSP.
,,
. , ,,
, . ( ), ( .
). , ,, ,
.,
,
,
. ( ,
).
4.1.9. Incoherence Phase
PWM81C (). Incoherence Phase
, ( , ) .
PWM81C. , 33004AD,
LM293D. U V ,W :
U V W 0i i i (4.2)
R36, R37 R38,6, .
M4 M5 .33004 D,
, ,LM293D, M1, M2 M3,
RIF+ RIF- . RIF+
DBM 03 DBM-PS 82
,RIF-
.DBM ( ANALOG1, )
TL 431 ( ANALOG1). RIF+,
( . )P4. RIF- RIF+
,33002 .
, U, .U
, . ImisU () RIF+ , “ ”
( R31 R32,LM293D) -15V(0L) .
U, . ImisU (
) RIF- . “ ” ( R34 R35,
LM293D) -15V(0L). ,D2, 32, PWM81C “ ”
-14.3V(0L). 32, PWM81C, 27, PWM86B, ANALOG2, .
27, PWM86B (-14.3V(0L) ) D5 ,R6 ( PWM86B), T8
“ ” 0V(0L), ,OP29 ( ANALOG2). OP29,
T28, 11, PWM80A, 0V(-AT). T17 (
PWM80A), D3, D6 D9 , 14V(-AT). IGBT
. , U, ,
, IGBT ( 4.1.1).
, , (). DBM 03
, ,Drive Enable.
,. Incoherence Phase
4024, PWM86B ().
4024 . 14 , 7 . 1 clock
DBM 03 83
,. 2
, . ,. 3 Q6 ,
64 1 , (
15V(0L)).,
RIF- RIF+ , 32, PWM81C ( 27, PWM86B) -14.3V(0L).
D3 ( PWM86B ), -0.7V(0L)( D5). 1 0V(0L). , , 1
. , IGBT, ,
(15V(0L)) (0V(0L)), 1.
. 32, PWM81C ( 27, PWM86B)15V(0L). T8 ( PWM86B),
OP 29, T28 (NALOG2). .
,, .
64 , 3 ( 15V(0L)),
T12, latch- ( clock). ,
17, PWM86B, 64 , Drive
Enable , IGBT. LED 15, PWM86B, Incoherence
Phase DBM .4024 Drive Enable., , T7 ( PWM86B), 2 ( ) (15V(0L)),
.Incoherence Phase
( ,).
DBM 03 DBM-PS 84
4.1.10.
. EV (Error Velocity) , , ( [ / ]),
. ,.
. ,, , Drive Enable
, .Reference Enable,
.
)
DBM-PS.
PWRSPLY1
.
( ,
4.2. DBM-PS
DBM-PS :
4.2.1. DBM-PS
(), . PTC ,
80°C . PTC ,72,
SC2.2.2 R72 R73,
R77, R83TC-a . PTC-a
, R77, R83 PTC-a
TL0
7V(0L)
P
DBM 03 85
2.47V(0L) (2.27V(0L) + ). -15V(0L),
, D21 . SC2,
DBM-PS
SPLY2
, Q23.Q23 , D17 “ “ 0V(0L),
( 5V(0L)). ,, 9, J2,
. ( .PTC) 80°C, PTC-a ,
R77, R83 PTC-a2.47V(0L), 15V(0L).
D21,SC2 . , LED ,
DBM-PS OVER TEMP,
(80°C), . .Q23, D17
4.7V(0L). , 5V(0L). , , 9, J2,
. DBM-aDBM 03 Drive Enable.
, ,DBM 03 .
4.2.2.
DBM 03( . )
, . a:
TBR
PWR .4077 4 EX-NILI ,
SC1.TBR.C89.
D56 .R126 2, 4077. 2, 4077
87, R88 R89. TBR
Q30 Q32
, , .R68, R69 R70.
TBRR
DBM 03 DBM-PS 86
D27 , .
1, 4077, . ,1,
, D42, D43,
1, 2, 4077, ,
, 15.7V(-AT). O
4077, , 2 . 3, 4077,
(0V(-AT)), 5, 4077, . 4
15V(-AT) Q35, SC1.
. ,TBR (
), . , ,, D27
. 1, 4077, .
EX-NILI ( 3) (15V(-AT)). (
C102) D43 5, 4077.EX-NILI ( 4) (
EX-NILI ). Q35, SC1, j. .
LED DBM-PS ,DBR FAULT. OP7 ,
Q58 ( PWRSPLY1). 4, J2, .
DBM-a DBM 03Drive Enable.
TBR. D35 D36, R135 R126,
2, 4077, 15.7V(-AT) ( D45). , 2, 4077 .
R104 C92,( 5V(-AT)) “ ”
LM293, 18V(-AT). ,
12, 4077. 11, ,, 5. ,
. 0.564 (
R104 16.4V(-AT),1.551 ), C92
5V(-AT). , , ( 36kW),
). TBR (
),. D27
0V(-AT). 1, 4077
DBM 03 87
0V(-AT), . , 2, 4077,, 1, , .
3 . 5, 4077,
( ).TBR
..
D25 ( ),Q20, 1, 4077, 15V(-AT) (
). 1, 2, 4077,. EX-NILI ( 3)
15V(-AT) ( ). (D43) 5, 4077, .
, DBM-PS. , 2, 4077, ,
1 (,
Q20).TBR (
), ,. D27
15.7V(-AT), 1, 4077.EX-NILI .
EX-NILI ( 3) 15V(-AT)( ). ( D43)
5, 4077, .
DBM 03. , ,
DBM 03 .
88
5.
,,
. Ta ,.
PWM , .
.1.
,. , ,
WM , “ ” .
. ,CSNA111, Honeywell,
1:1000, 50A. 15 (45A peak), LA 50-P/SP1
5
,
P
5.1.1.
15A (45A peak)
LEM, 1:2000, peak 100 ( 50A),
, PWM90A. DBM 03U V, ,
W U V, :
iW U Vi i (5.1)
, , 10A (25A peak)., .
U V , , ,CSNA111,
( PWM90A). (25 )
DBM 03 89
50mA ( ) ., PWM90A
( ). , 13 ,U (
ANALOG2), R5, 120PWM90A( ).
V, 3/12,4, 120 . ,
.1.2.
R ( 25A) 6V(0L) ( 50mA·120 )
. DBM 03 () ,
, 6V(0L) .
, , [ -6V(0L), 6V(0L) ].
DSP. DSP, ,,
.,
- ,.
, DSPd-q a-b-c ,
a-b-c .D/A ,
[ -10V(0L), 10V(0L) ].
5PWM
DBM 03 PI. (
U V),.
(4.2). WU V (
), :
* *W Uu u u *
V (5.2)
PWM81C,
PWM90A, . ,,
90
..
33004AD ( M5, 2 3, M4, 2 3).
, , U., V.
U,, :
' '* UREF 1 UMJER 2 7 61v R v R sC R
(5.3)
U
U1 ' '1 2 7 5 6
7 5 6 67 5 6
1u
R R C C Cs C C C sR
C C C:
UREFv - U
UMJERv - , R5
(‘), PWM81C,PWM90A.
V, V.C5 C6 ( C1 C2, V)
PWM90A,, .
IGBT
slopeM208A, , , ,
,
,.
*U1u
limiter L
.IGBT ,
5.1 .
5.1. IGBT
( )
DBM 03 91
slope limiter-a , , R5,
33004AD, M5. ( R6) ,
PWM . ,
” . “ ” IGBT
.” IGBT
“ ” ,,
,
. -0.68V(0L).
U, *Uu
“
“,
.
. , (),tON .
,, . ,
, , “ ”( , “ ”
tON). “ ” . ,
, ,, . ,
,,.
K a U,33004AD, M5, 5 6.
,,
R53 0V(0L). ,,
15V(0L). R54Z3 Z4. (5.8V(0L))
, R55 R56,R56 0.68V(0L).R57 ,
.,
, ,U, “ ”
.
92
16%,.
, ,. ,
,. , ,
. , ,.
,, .
5.2 , U (uuref-0),
(uuref-harmonik),(harmonik-0).
,e 10V,
50Hz .
0.000ms 20.00ms 40.00ms 60.00ms 80.00ms 100.0ms
10.00
7.500
5.000
2.500
0.000
-2.500
-5.000
-7.500
-10.00
uuref-0uuref-harmonikharmonik-0
5.2.
,.,
. ( )
, .,
( harmonik-0 5.2) ,
. ( PWM81C).
DBM 03 93
Z1 Z2, 5.2 .
, ,PWM . ,
, “ ” ,.
V.W
U V, (5.2).LM208A, M7.
LM208A slope limiter.PWM
W. “ ” W , U V. ,
, WU V, (5.1).
33004AD, M6,
DBM 03
, DBM 03.
,
( ) 90° . DBM 03 , ( )
. , ( ).
( )
2 3. 900Hz
1200Hz.
5.2.
,DBM 03 .
5.2.1.
.
10kHz- , 7V.
,
.
94
, , [22]:
sinm
cos
tgU
(5.4)
.
. (
) ( )-
U
, 5.3 .
arctg VF PI
VCO
.............
.............
sin
cosm
(u<0)
5.3.
- arctg .,
( .).
, ., 10kHz.
, ( .
(5.4)). . , , .
(5.4)
k( m- m*)
(u>0)u
m*
-
, ,. ,
, ,
. , .,
.VF ,
DBM 03 95
. , (
, NF )
. PI ( ),
.
...
DSP .d-q a-b-c
,.
5.2.2.
. 5.4 .
Ko p + i/s KD 1/(Js)
Ko
AWU
T[Nm]+
-
[rad/s]
[rad/s]
5.4.
[-10V, 10V]. CNC-a, PC
RS485. ,.
96
Ko je:
50.06 1/ rad/sKo (5.5)
KD .
(
2%). KD)
Kt :( .
max t6
[A] [Nm/A]I KKD
10 (5.6)
KP KI,. , ,
AWU (Anti Wind Up).
. p iKP KI :
[kgm2] 5.4 ( + ). p i
,
16358.31p KP
i KI(5.7)
KP KI 0 255. 5 –10 Nm
3-5 , 60Hz, 1.5%.
.
A/D D/A.
. ,,
DBM 03 97
6. DBM 03
DBM 03 . , ,.
.
.1. DBM 03
DBM 03 ,
. 6.1, 9. 6.1 6.1 .
6.1. 6.1
6
9
1 9 ( 1, 2, 3)2 6 3 3 3 5 2 2 4 4 1 1 5 8 I/O
6 7
7 LEDDRF
:;
,FA
8 LED Watch dogWTD
:;
9 RNC3 3 LED
10 LEDRNC2 2
11 LEDRNC1 1
12 3 LEDOVT3
DBM 03 98
13 LEDOVT2 2
14 1 LEDOVT1
15 TORQ
16 RESET
17 DRV OVT LED
18 LEDSHORT 1
19 SHORT 2 LED
20 SHORT 3 LED
21 J2 RS485
22 J3;
23 REF EN LED
24 DRIVE EN 3 LED
25 DRIVE EN 2 LED
26 DRIVE EN 1 LED
27 POWER AUX OKLED
28 PERSONALITYCARD
Setup
29 J130 GND31 L - 0VDC-HV 3032 L+ 0VDC+HV 30
DBM 03 99
2
3
4
5
6
7
8
9
10
11
12
1
13
14
15
16
21
22
28
30
31
32
29
27
26
25
24
23
20
19
18
17
6.1. DBM 03
DBM 03 100
6.2. DBM 03
DBM 03 . ,,
.,
( ). :
ANALOG1 , ,, .
,ANALOG1
6.2,
.
PWM82B ,,
, .. ,PWM82B.
LEM ., ,U V .
PWM90A ,, .
,. ,
PWM90A
,
.
PWM81C ,,
PWM .incoherence phase .
, PWM81C.
PWM86B ,PWM ,
.incoherence phase .
, PWM86B.
101
DBM
03
6.2
. D
BM
03
PW
M90
A
PW
M81
C
PW
M86
B
PW
M80
A
PW
M78
A
PW
M79
A
IGB
T
PW
M82
B
152L
013A
LEM
AN
ALO
G1
DBM 03 102
80A ,,
., PWM80A
PWM
.
152L013A , “ ” .
, .
PWM78A , “ ” .
., PWM78A.
PWM79A , “ ” .
PWM79A, .,
PWM79A.
IGBT . Six Pack IGBT . datasheetDBM 03 .
DBM 03 103
.inc).,
. IGBT
IPM . , DBM 03,
.
DBM 03, Vickers ( Moog
,,
.,
,
. DBM 03 ., DBM 04 , ,
IGBT
,
104
[1] “DBM 03 user’s manual”, Rev. 8, Vickers Electrics, Casella GE, Italy 1997.
[2] “Application manual”, Semikron, http://www.semikron.com/applica_help/
[3] “IGBT Characteristics”, International Rectifier, Application Note an-983, http://www.irf.com/technical-info/appnotes.htm.
[4] Jonathan Dodge, John Hess, “IGBT Tutorial”, Advanced Power Technology, Application Note apt0201, Rev. , Ju y 1, 2002. B lhttp://www.advancedpower.com/TechSupport/ApplicationNotes/default.aspx.
[5] “Using IGBT Modules”, Mitsubishi Power Modules MOS, Mitsubishi Electric, Sep. 1998, http://www.mitsubishichips.com/products/power/papers.html.
[6] K. S. Oh, ”IGBT Basics 1”, Fairchild Semiconductor, Application Note 9016, February 2001.
[7] K. j. Um, “IGBT Basics 2”, Fairchild Semiconductor, Application Note 9020, April 2002.
] Carl Blake, Chris Bull, “IGBT or MOSFET: Choose Wisely”, International Rectifier, 223 Kansas St., El Segundo California 90245.
] M. März, A. Knapp, M. Billmann, “High-speed 600V IGBT in NPT technology”, www.siemens.com
[8
[9.
0] Jonathan Dodge, “Latest Technology PT IGBTs vs. Power MOSFETs”, Advanced Power Technology, Application Note apt0302, Rev. A, April 4, 2003,http://www.advancedpower.com/TechSupport/ApplicationNotes/default.aspx
[1
.
1] Ralph McArthur, ”Making Use of Gate Charge Information in MOSFET and IGBT Data Sheets”, Advanced Power Technology, Application Note apt0103, October 31, 2001, http://www.advancedpower.com/TechSupport/ApplicationNotes/default.aspx
[1
.
2] Junji Yamada, et al., “New MEGA POWER DUAL™ IGBT Module with Advanced 1200V CSTBT Chip”, IEEE 2002.
3] “Application Characterization of IGBTs”, International Rectifier, Application Note an-990, http://www.irf.com/technical-info/appnotes.htm
[1
[1.
DBM 03 105
[14] “Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs”, International Rectifier, Application Note an-944, http://www.irf.com/technical-info/appnotes.htm.
5] Franz Auerbach, et al., ”6.5kV IGBT-Modules”, www.siemens.com[1
Switzerland Ltd, Semiconductors, Fabrikstrasse 3, CH-5600 Lenzburg, [16] M. Rahimo et al., “The status of IGBTs and IGCTs rated over 8kV”, ABB
Switzerland.
[17] “Mitsubishi Electric ADVANCE”, Power Electronics Edition, vol. 97 / March 2002.
[18] “The Do’s and Don’ts of Using MOS-Gated Transistors”, International Rectifier, Application Note an-936, http://www.irf.com/technical-info/appnotes.htm.
[19] Kenneth Dierberger, “Performance Comparison of the New Generation of IGBTs with MOSFETs at 150kHz”, Advanced Power Technology, ApplicationNote apt9805, Presented at Powersystems 98, Santa Clara http://www.advancedpower.com/TechSupport/ApplicationNotes/default.aspx.
0] E. I. Carroll, “Power Electronics for Very High Power Applications”, ABB
1] Jack Takesuye, Scott Deuty, “Introduction to Insulated Gate Bipolar
2] “
3] . . , . , “ ,
[24], 1997.
[25] d H ur , “ E C ice
6.
[2Semiconductors AG, Switzerland.
[2Transistors”, Motorola Semiconductor Application Note AN1541, 1995.
[2”, , , 2001.
[2, , , ”,
, ,1997.
, “ ”, ,
Muhamma arun Rashid Power lectronics, ircuits, Dev s, and Applications”, Prentice-Hall, Inc., Englewood Cliffs, New Jersey 07632, 1988.
[26] Werner Leonhard, “Control of Electrical Drives”, 2nd Completely Revised and Enlarged Edition, Springer-Verlag, Berlin, 199
[27] “”, , , 2001.
106
[28] , “ ”,, , , 2002.
DBM 03 107
1
1, datasheet IGBT 6MBI 30L-060, Fujilectric.E
108
DBM 03 109DBM 03 109
110110