datashet automotriz
TRANSCRIPT
SANKEN ELECTRIC CO.,LTD.
The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies.Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements in the performance, reliability, or manufacturability of its products. Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify that the information being relied upon is current.Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use.When using the products herein, the applicability and suitability of such products for the intended purpose or object shall be reviewed at the users responsibility.Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction.Sanken products listed in this catalog are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Before placing an order, the user’s written consent to the specifications is requested.The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited.Anti radioactive ray design is not considered for the products listed herein.This publication shall not be reproduced in whole or in part without prior written approval from Sanken.Gallium arsenide is used in some of the products listed in this publication. These products are dangerous if they are burned or smashed in the process of disposal. It is also dangerous to drink the liquid or inhale the gas generated by such products when chemically disposed.
CAUTION / WARNING
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Contents
1
Examples of Use of Typical Products by Application .............. 2
1 ICs1-1. Regulator ICs
Application Note ................................................................................ 7
Dropper Type Regulator ICs ......................................................... 8
Dropper Type System Regulator ICs ...................................... 16
Switching Type Regulator ICs ................................................... 22
1-2. Power Switch ICs
High-side Power Switch ICs ...................................................... 24
Low-side Switch ICs ...................................................... 50
1-3. Motor Driver ICs
Stepper-motor Driver ICs ............................................................ 56
DC Motor Driver ICs ...................................................................... 60
1-4. HID Lamp Driver ICs ..................................................................... 64
1-5. Custom ICs ....................................................................................... 76
2 Discretes2-1. Transistors
2-1-1. Transistors ............................................................................ 80
2-1-2. Transistor Arrays ............................................................... 96
2-2. MOS FETs
2-2-1. MOS FETs ......................................................................... 108
2-2-2. MOS FET Arrays ............................................................. 117
2-3. Thyristors
2-3-1. Reverse Conducting Thyristors .............................. 125
2-4. Diodes
2-4-1. Alternator Diodes ........................................................... 127
2-4-2. High-voltage Diodes for Igniter ................................ 128
2-4-3. Power Zener Diodes ..................................................... 129
2-4-4. General-purpose Diodes ............................................ 130
3 LEDs3-1. Uni-Color LED Lamps ................................................................ 134
3-2. Bi-Color LED Lamps .................................................................. 137
3-3. Surface Mount LEDs .................................................................. 138
3-4. Infrared LEDs .................................................................................. 140
3-5. Ultraviolet LEDs ............................................................................ 141
3-6. Multi-chip Modules .................................................................... 142
Part Number Index in Alphanumeric Order ......................................... 147
2
Examples of Use of Typical Products by ApplicationExamples of Use of Typical Products by Application
Throttle System
•DC Motor Driver ICs (p.60 and after)Control IC and full bridge power stage in a single package. Surface-mounting type series are also available.SI-5300 / SPF7301
•Motor Driver Transistor Arrays (p.99)H-bridge of NPN x 2 and PNP x 2 in a single package. With integrated back emf. clamp diode.SLA8004
•Motor driver power transistors (p.68 and after)With integrated back emf. clamp diode. 2SA1568 / 2SC4065
•Diodes (p.127)Solder and press fit type as well as Zener type is available.SG-9 / SG-10 / SG-14
•Regulator ICsCustom-made (contact our sales reps.)
Alternators
•Injector transistors (p.84 and after)Transistors and MOS FETs are available in discretes and arrays in various packages.2SB1622 / 2SC4153 / 2SD2382 / MN611S / STA461C / STA463C / STA508A / SDC09 / SDK09 / SPF0001 / SSD103
Fuel Injectors
•HID lamp driver ICs (p.64 and after)High-voltage controller IC and 4-circuit power stage in a single package.Direct drive from CPU.SLA2402M / SLA2403M / SMA2409M
•Thyristors for HID lamp ignition (p.125 and after)Best suited to C-discharge SW element on high-voltage primary side of an igniter.Integrates a reverse direction diode.High di/dt resistanceTFC561D / TFC562D
•MOS FET arrays for driving HID lamps (p.122)4 circuits of N-ch MOS FETs of 450V/7A in a single package.SMA5113
•2-ph stepper-motor driver ICs for AFS (p.58 and after)Low output saturation voltage, integrated recovery diode, surface-mount.SPF7211
•High-voltage diodes for ignition (p.128)Withstand voltage range: 0.5 to 15kVSHV-01JN / SHV-05J / SHV-06JN
•Ignition transistors (p.89 and after)2SD2141 / MN638S
•Ignition ICsCustom-made (contact our sales reps.)
Headlamps
Ignition System
3
•AT solenoid drivers (high-side power switch ICs) (p.26 and after)Integral diagnostic function, surface-mount, 2- and 3-circuit types and other diverse models.
SI-5151S / SPF5003 / SPF5004 / SPF5007 / SLA2502M
•AT linear solenoid driver (high-side power switch ICs) (p.46 and after)Integral current detection resistor, current monitor output, surface-mount and 2-circuit types are also available.
SPF5017 / SPF5018
•Solenoid/motor driver MOS FETs (p.108 and after)Various packages from discretes to arrays.
2SK3710 / FKV660S / SLA5027 / SDK08
•Solenoid/motor driver ICs (p.54)Surface-mount 4-circuit type with output voltage monitor.SPF5012
•Multi-chip LED modules (p.142)
Room Lamp
Power Steering
•Motor driver MOS FETs (p.108 and after)Various packages integrating low ON resistors, bidirectional Zener diodes, etc.
2SK3710 / 2SK3711 / 2SK3724 / 2SK3800 / 2SK3801 / 2SK3803 / 2SK3851
•Power LEDCustom-made (contact our sales reps.)
Tail Lamps
O2 sensor heater
•Heater driver MOS FETs (p.115)Low ON resistor and integral gate protection diode.
FKV460S
Car Navigation and Audio•Various LEDs (p.133)
Transmission ABS and VDC
4
5
1 ICs
1-1. Regulator ICs Application Note .............................................. 7
Dropper Type Regulator ICs .................... 8
SI-3001S (5V/1A, With Output ON/OFF Control) ... 8
SI-3003S (5V/0.8A, 3-terminal) ....................... 10
SI-3101S (5V/0.4A, 5V/0.07A, 2-output, With Output ON/OFF Control) 12
SI-3102S (5V/0.1A, 5V/0.04A, 2-output, With Output ON/OFF Control) 14
Dropper Type System Regulator ICs .. 16
SI-3322S (5V, Surface-mount) ........................ 16
SPF3004 (5V/0.4A, 3.3V/0.2A, Surface-mount 2-output) 18
SPF3006 (5V/0.4A, 5V/0.2A, Surface-mount 2-output) 20
Switching Type Regulator ICs ............... 22
SI-3201S (5V/3A) ............................................ 22
1-2. Power Switch ICs High-side Power Switch ICs ................... 24
SDH04 (With Diagnostic Function, Surface-mount 2-circuits) 24
SI-5151S (With Diagnostic Function).............. 26
SI-5152S (With Diagnostic Function).............. 28
SI-5153S (With Diagnostic Function, Built-in Zener Diode)30
SI-5154S (With Diagnostic Function, Built-in Zener Diode)32
SI-5155S (With Diagnostic Function).............. 34
SLA2501M (With Diagnostic Function, 3-circuits) 36
SLA2502M (With Diagnostic Function, 4-circuits) 38
SPF5003 (With Diagnostic Function, Surface-mount 2-circuits) 40
SPF5004 (With Diagnostic Function, Surface-mount 2-circuits) 42
SPF5007 (With Diagnostic Function, Surface-mount 3-circuits) 44
SPF5017 (Surface-mount 2-circuit, current monitor output function) 46
SPF5018 (Surface-mount, current monitor output function)48
Low-side Switch ICs ................................... 50
SPF5002A (Surface-mount 4-circuits) .......... 50
SPF5009 (With Diagnostic Function, Surface-mount 4-circuits) 52
SPF5012 (Surface-mount 4-circuits with Output Monitor) 54
1-3. Motor Driver ICs Stepper-motor Driver ICs ......................... 56
SLA4708M (50V, 1.5A) ................................... 56
SPF7211 (40V, 0.8A) ..................................... 58
DC Motor Driver ICs .................................... 60
SI-5300 (40V, 5A) ..................................... 60
SPF7301 (36V, 7A) ..................................... 62
1-4. HID Lamp Driver ICs SLA2402M (500V, 15A) .................................. 64
SLA2403M (500V, 7A) .................................... 68
SMA2409M (500V, 7A) ................................... 72
1-5. Custom ICs ..................................... 76
6
Application Note for Regulator ICs
Temperature and ReliabilityReliability of an IC is generally heavily dependent on operating temperature. Heat radiation must be fully considered, and an ample margin should be given to the radiating area in designing heatsinks. When mounting ICs on heatsinks, always apply silicone grease and firmly tighten. Air convection should actively be used in actual heat dissipation. The reliability of capacitors and coils, the peripheral components, is also closely related to temperature. A high operating temperature may reduce the service life. Exceeding the allowable temperature may cause coils to be burned or capacitors to be damaged. Make sure that output smoothing coils and input/output capacitors do not exceed their allowable temperature limit in operation. We recommend, in particular, to provide an ample margin for the ratings of coils to minimize heat generation.
Power Dissipation (PD)1. Dropper Type
PD = IO • [VIN (mean) - VO]
2. Switching Type
PD = VO • IO ( - 1) - VF • IO (1 - )
Efficiency depends on input/output conditions.
Refer to the efficiency characteristics.
VO : Output voltage
VIN: Input voltage
IO : Output current
: Efficiency
VF : Diode forward voltage
Heatsink DesignThe maximum junction temperature Tj (max) and the maximum case temperature Tc (max) given in the absolute maximum ratings are specific to each product type and must be strictly met. Thus, heatsink design must be performed in consideration of the condition of use which affects the maximum power dissipation PD (max) and the maximum ambient temperature Ta (max). To facilitate heatsink design, the relationship between these two parameters is presented in the Ta-PD characteristic graphs. Heatsink design must be performed in the following steps:
1. Obtain the maximum ambient temperature Ta (max) (within the set).
2. Obtain the maximum power dissipation PD (max).
3. Identify the intersection on the Ta-PD charac-teristic graph and obtain the size of the heatsink to be used.
The size of a heatsink has been obtained. In actual applications, a 10 to 20% derating factor is
generally used. Moreover, the heat dissipationcapacity of a heatsink is heavily dependent on how it is mounted. It is therefore important and recommended to measure the heatsink and case temperature in actual operating environments.
Setting DC Input VoltageObserve the following precautions when setting the DC input voltage: • VIN (min) must be at least the set output voltage
plus dropout voltage for the dropper type. It must be at least the recommended lowest input voltage for the switching type.
• VIN (max) must not exceed the DC input voltage of the electrical characteristics.
Screw TorqueScrew torque should be between 0.588 to 0.686 [N • m] (6.0 to 7.0 [kgf • cm]).
Recommended silicone greaseVolatile type silicone grease may produce cracks after elapse of long term, resulting in reducing heat radiation effect.Silicone grease with low consistency (hard grease) may cause cracks in the mold resin when screwing the product to a heatsink.
100 VO
VIN
7
Others
This product may not be connected in parallel.The switching type may not be used for current boosting and stepping up voltage.
Type Suppliers
G746 Shin-Etsu Chemical Co., Ltd.
YG6260 GE Toshiba Silicones Co., Ltd.
SC102 Dow Corning Toray Silicone Co., Ltd.
Output ON
Output OFF
Output ON
Output OFF
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
Output Voltage
Dropout Voltage
Input Voltage
Quiescent Circuit Current
Output Voltage Temperature Coefficient
( Tj= 25ºC, VIN=14V unless otherwise specified)
VIN
VIN =12 to 16V, IO=0.4A
IO 0.4A
IO 1.0A
IO=0.4A, VIN=6 to 16V
IO=0 to 0.4A
IO=5mA, Ta = –10 to +100ºC
IO=0A
VC =2.7V
VC = 0.4V
f =100 to 120Hz
6 *2 30 *1 V
4.90 5.00 5.10 V
0.5
1.0
V
V
30 mV
±0.5
100 mV
54
3
dB
10 mA
1.2 A
2.0 V
0.8 V
20
–0.3
µA
mA
VO
VDIF
∆VO LINE
∆VO LOAD
mV/ºC∆VO/∆T
RREJ
Iq
IS1
VC, IH
VC, IL
IC, IH
IC, IL
Ripple Rejection
Overcurrent Protection Starting Current
Control Voltage
Control Current
Line Regulation
Load Regulation
*3
*4
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings(Ta = 25ºC)
DC Input Voltage
Output Control Terminal Voltage
Output Current
Power Dissipation
Junction Temperature
Operating Temperature
Storage Temperature
Junction to Case Thermal Resistance
Junction to Ambient-Air Thermal Resistance
VIN
VC
IO
PD1
PD2
Tj
TOP
Tstg
j-c
j-a
V
With infinite heatsink
Stand-alone without heatsink
Stand-alone without heatsink
V
A
W
W
ºC
ºC
ºC
ºC/W
ºC/W
35
VIN
1.0
18
1.5
– 40 to +125
– 40 to +100
– 40 to +125
5.5
66.7
*1
Vc
Ter
min
al
Equivalent Circuit Diagram
Standard Circuit Diagram
Features Output current of 1.0A 5-terminal type <output on/off control, variable output voltage (rise only)> Voltage accuracy of ±2% Low dropout voltage 1V at IO 1.0A, 0.5V at IO 0.4A Built-in overcurrent, overvoltage and thermal protection circuits Withstands external electromagnetic noises TO220 equivalent full-mold package
External Dimensions (unit: mm)
8
a
b
1 2 3 4 5
10.0±0.2
3.2±0.2
0.5
4.0±0
.2
7.9±0
.2
16.9
±0.3
0.95±0.15
0.85 –0.1
P1.7±0.7•4=6.8±0.7
4.2±0.2
2.8±0.2
2.6±0.1
3.9±0.7
8.2±0.7
0.45–0.1+0.2
(2.0
)
5.0
±0.6
(8.0
)
(17.
9)
(4.6
)
(4.3)
+0.2
1. GND2. VC (on/off)3. Vo4. Vosense5. VIN
a: Part No.b: Lot No.
(Forming No. 1101)
D
VDC input DC output
VC
1
OOIN
5 3
1
SI-3001S2 4
C1 C2
OPEN
GND1
2
5 3
4
VO
VO senseR3
R4
MIC
Tr1
R1
R2
VIN
Vc(on/off)
++
Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S
Notes:*1. Since PD(max) = (VIN –VO) • IO =18( W), VIN(max)and IO(max)may be limited depending on operating conditions. Refer to the
Ta-PD curve to compute the corresponding values.*2. Refer to the dropout voltage.*3. IS1 rating shall be the point at which the output voltage VO (VIN = 14V, Io = 0.4A) drops to –5%.*4. The output control terminal Vc is pulled up inside the IC. Each input level can be directly driven with LS-TTL ICs. Thus,
LS-TTL direct driving is also possible.
a : Pre-regulatorb : Output ON/OFF controlc : Thermal protectiond : Over-input and overcurrent protection
e : Drive circuit f : Error amplifierg : Reference voltage
a
b
c
de f
g
Co : Output capacitor (47 to 100µF, 50V)C1, C2 : Input capacitors (C1: approx. 47µF, C2: approx. 0.33µF).
These are required for inductive input lines or long wiring. Tantalum capacitors are recommended for C1 and Co, especially at low temperatures.
D1 : Protection diode. Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.)
9
00
0.5 1.0
0.5
0.4
0.3
0.2
0.1
00
5 10 15 20 25 30
5.1
5.0
4.9
1.0 (A)
0 (A)0.4 (A)
IO =
00
0.5
5.0
4.9
5.5 (V)
5.1
1.0
30 (V)12 to 16 (V)
VIN =
00
2 4 6 8 10
1
2
3
4
5
6
7
(Ω)5
(Ω)12
00
2 4 6 8 10
15
10
5
I = 0 (A)o
00
0.5 1.0 1.5 2.0
1
2
3
4
5
6
2.5 3.0
(V)5.5
(V)14
(V)20
(V)30
(V)10
00
1 2 3
1
2
3
4
6
4 5
5
OFF
14 (V)I = 0 (A)V =oIN
ON
00
125
1
2
3
4
6
5
130 135 140 145 150 155
6(A)I = 0
V = (V)oIN
00
5.0
4.9
5.1
100--50 50 150
5.5(V)14(V)
16(V) 12(V)30(V)
VIN =
VIN—IOUT condition
/0.412(V) (A)
(A)(A)(A)(A)
(V)(V)(V)(V)
/1.05.5
/0.414/0.416/ 030
0–20--30 20 6040 80 1000
5
10
15
20Use G746 silicone grease (Shin-Etsu Chemical) and aluminum heatsink.
With infinite heatsink
200•200•2mm (2.3ºC/W)
100•100•2mm (5.2ºC/W)
75•75•2mm (7.6ºC/W)
Without heatsink
100
4
3
2
1
5
6
3020 40 50
Note on Thermal Protection Characteristics:The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time.
Output current IO (A)
Output current IO (A)
Dro
po
ut v
olta
ge
VD
IF (V
)
Io vs VDIF Characteristicsc Line Regulation
Out
put
vo
ltag
e V
O (V
)
Out
put
vo
ltag
e V
O (V
)O
utp
ut v
olta
ge
VO (V
)O
utp
ut v
olta
ge
VO (V
)
Out
put
vo
ltag
e V
O (V
)
Out
put
vo
ltag
e V
O (V
)
Out
put
vo
ltag
e V
O (V
)
Out
put
vo
ltag
e V
O (V
)
Input voltage VIN (V)
Input voltage VIN (V)
Input voltage VIN (V) Input voltage VIN (V)
Load Regulation
Rise Characteristics Quiescent Circuit Current
Qui
esce
nt c
urre
nt
lq (m
A)
Overcurrent Protection Characteristics ON/OFF Control Characteristics
Output ON/OFF control voltage VC (V)
Thermal Protection Characteristics
Output Voltage Temperature Characteristics
Ambient temperature Ta (ºC)
Ambient temperature Ta (ºC)
Output current IO (A)
Operating temperature Ta (ºC)
Po
wer
Dis
sip
atio
n P
D (W
)
Ta—PD Characteristics Overvoltage Protection Characteristics
Load resistance
Electrical Characteristics
Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
Output voltage
Dropout voltage
Input voltage
Quiescent circuit current
(Tj=25ºC, VIN=14V, IO=0.5A unless otherwise specified)
VIN
IO 0.5A
IO 0.8A
VIN=8 to 16V
IO=0 to 0.5A
IO=0A
f=100 to 120Hz
6 30 V
4.90 5.00 5.10 V
0.5
1.0
V
V
30 mV
100 mV
54
3
dB
10 mA
0.9 A
VO
VDIF
VO LINE
VO LOAD
RREJ
Iq
IS1
Ripple rejection
Overcurrent protection starting current
Line regulation
Load regulation
*3
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings(Ta=25ºC)
DC input voltage
Output current
Power Dissipation
Junction temperature
Operating temperature
Storage temperature
Junction to case thermal resistance
Junction to ambient-air thermal resistance
VIN
IO
PD1
PD2
Tj
TOP
Tstg
j-c
j-a
V
With infinite heatsink
Stand-alone without heatsink
Stand-alone without heatsink
A
W
W
ºC
ºC
ºC
ºC/W
ºC/W
35
0.8
22
1.8
–40 to +150
–40 to +100
–40 to +150
5.5
66.7
*2
Equivalent Circuit Diagram
Standard Circuit Diagram
External Dimensions (unit: mm)
10
Features 3-terminal IC regulator with 0.8A output current Voltage accuracy of ±2% Low Dropout voltage 0.5V at IO 0.5A, 1V at IO 0.8A Built-in dropping type overcurrent, overvoltage and thermal protection circuits TO220 equivalent full-mold package
4•P1.7±0.15=6.8±0.15
10±0.2
4.2±0.2
2.8±0.2
2.6±0.15
3.2±0.2
2 m
ax
0.5
4±0.2
7.9
±0.2
16.9
±0.3
(13.
5)
0.94±0.15
0.45
a
b
Terminal connections1. VIN
2. (NC)3. GND4. (NC)5. VO
a: Part No.b: Lot No.
0.85+0.2–0.1
+0.2–0.1
(root dimensions)
1 2 3 4 5
(Forming No. 1115)
D
VDC input DC output
VC
1
OOIN
1
3
SI-3003S
C1 C2
5
2N.C N.C
4+ +
VIN VO
1
3
5
GND
TSDERR
OCP
DET
REFD
RIV
E
Dropper Type Regulator ICs [3-terminal] SI-3003S
Notes:*1. Since PD(max) = (VIN–VO) • IO=22 (W), VIN(max) and IO (max) may be limited depending on operating conditions. Refer to the
Ta—PD curve to compute the corresponding values.*2. Refer to the dropout voltage.*3. IS1 rating shall be the point at which the output voltage VO (VIN=14V, IO=0.5A) drops to –5%.
Co : Output capacitor (47 to 100µF, 50V) C1,C2 : Input capacitors (C1: approx. 47µF, C2: approx. 0.33µF).
These are required for inductive input lines or long wiring. Tantalum capacitors are recommended for C1 and Co, especially at low temperatures.
D1 : Protection diode. Required as protection against reverse biasing between input and output.
(Recommended diode: Sanken EU2Z.)
*2 *1
*2
*1
*2
*1
11
0.2
0.1
0.3
0.4
0.5
00 0.2 0.4 0.6 0.8 0
4.9
5.0
5.1
05 10 15 20 25 3530
0
2
1
3
4
6
5
02 4 6 108
00
4.9
5.0
5.1
0.2 0.4 0.6 0.8
IO=0A =0.2A=0.5A=0.8A
IO=0A =0.5A=0.8A
IO=0.8A =0.5A =0.2A =0A
IO=0.5, 0.8A =0.2A =0A
VIN=35V =25V =14V
=6V
5.0
4.9
5.1
–50 0 50 100 150
VIN / IO:
6V / 0.8A14V / 0.5A
30V / 0A
0
100
50
150
200
250
05 10 15 20 25 3530
00
4
3
2
1
5
6
0.5 1.0 1.5 2.0 2.5
VIN=6V
14V
35V
25V
2
1
3
4
5
6
0120 140 160 180 200
VIN=6VIO=5mA
10
5
15
20
25
0–40 0 40 80 100
200 • 200 • 2mm(2.3ºC/W)
100 • 100 • 2mm(5.2ºC/W)
75 • 75 • 2mm(7.6ºC/W)
Note on Thermal Protection Characteristics:The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time.
Output current IO (A)
Output current IO (A)
Dro
po
ut v
olta
ge
VD
IF (V
)
Io vs VDIF Characteristics Line Regulation
Out
put
vo
ltag
e V
O (V
)
Out
put
vo
ltag
e V
O (V
)O
utp
ut v
olta
ge
VO (V
)
Out
put
vo
ltag
e V
O (V
)O
utp
ut v
olta
ge
VO (V
)
Out
put
vo
ltag
e V
O (V
)
Input voltage VIN (V)
Input voltage VIN (V) Input voltage VIN (V)
Load Regulation
Rise Characteristics Circuit Current
Thermal Protection Characteristics
Gro
und
cur
rent
lg
(mA
)
Overcurrent Protection Characteristics
Output Voltage Temperature Characteristics
Ambient temperature Ta (ºC)
Ambient temperature Ta (ºC)
Output current IO (A)
Operating temperature Ta (ºC)
Po
wer
Dis
sip
atio
n P
D (W
)
Ta—PD Characteristics
With silicone greaseHeatsink: aluminum
With infinite heatsink
Without heatsink
Electrical Characteristics
Dropper Type Regulator ICs [3-terminal] SI-3003S
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
(Ta=25ºC)
DC input voltage
Battery reverse connection
Output control terminal voltage
Output current
Power Dissipation
Output voltage
Dropout voltage
Input voltage
Quiescent circuit current
Overvoltage protection starting voltage
Thermal protection starting temperature
(Tj=25ºC, VIN=14V unless otherwise specified)
Channel-channel voltage difference
Junction Temperature
Operating temperature
Storage temperature
Junction to case thermal resistance
Junction to ambient-air thermal resistance
VIN
VINB
VC
VIN
IO=0.05A
IO=0.3A
IO1 0.05A
IO2 0.4A
VIN=6 to 18V, IO=0.05A
IO1=0 to 0.05A
VIN=6 to 18V, IO=0.3A
IO2=0 to 0.3A
IO1=0A, VC=0V
VC=4.8V
VC=3.2V
f=100 to 120Hz
f=100 to 120Hz
IO1 =0 to 0.05AIO2 =0 to 0.3A
6 35 V
4.80 5.00 5.20 V
4.80 5.00 5.20 V
–0.1 0.1 V
1.0 V
1.0 V
10 30 mV
10 30 mV
30 70 mV
40 70 mV
54 dB
54 dB
0.8 mA
0.1 A
0.5 A
4.2 4.5 4.8 V
3.2 3.5 3.8 V
100 µA
–100 µA
35 V
130 ºC
VO1
VO2
VO
VDIF1
VDIF2
VO LINE1
VO LINE2
VO LOAD1
VO LOAD2
RREJ1
RREJ2
Iq
I (S1) 1
I (S1) 2
VCH
VCL
ICH
ICL
VOVP
TTSD
IO1
IO2
PD1
PD2
Tj
TOP
Tstg
j-c
j-a
CH1
CH2
CH1
CH2
CH1
CH2
CH1
CH2
CH1
CH2
Ripple rejectionCH1
CH2
Overcurrent protection starting current
CH1
CH2
Output control voltageOutput ON
Output OFF
Output ON
Output OFFOutput control current
V
V One minute
With infinite heatsink
Stand-alone without heatsink
Stand-alone without heatsink
V
A
A
W
W
ºC
ºC
ºC
ºC/W
ºC/W
40
–13
VIN
0.07
0.4
18
1.5
–40 to +125
–40 to +115
–40 to +125
5.5
66.7
(VO1—VO2)
Line regulation
Load regulation
Equivalent Circuit Diagram
Standard Circuit Diagram
External Dimensions (unit: mm)Features Single input dual output <sub output (5V/0.07A), main output (5V/0.4A)> Main output can be externally turned ON/OFF (with ignition switch, etc.) <most suitable as memory backup power supply> Low standby current ( 0.8mA) Low dropout voltage 1V Built-in dropping type overcurrent, overvoltage and thermal protection circuits TO220 equivalent 5-terminal full-mold package
1 2 3 4 5
10.0
3.2
0.5
4.0
7.9
16.9
0.95
0.85
P1.7 • 4 = 6.8
4.2 ±0.2
2.8 ±0.2
2.6 ±0.1
3.9±0.7 ±0.7
±0.15
8.2 ±0.7
0.45–0.1+0.2
–0.1+0.2
(2.0
)5.
0±0
.6(8
.0)
(17.
9)
(4.6
)
(4.3)
1. VIN2. VC (on/off)3. GND4. VO15. VO2
a: Part No.b: Lot No.
(Forming No. 1101)
VIN
VC
VO1
VO2
GND
1
2
4
5
3
REF
DR
IVE
DR
IVE
DET
OCP
ERRTSD
OCP
DETOVP
CONT
ERR
CIN
VC
+
D1
VIN
1SI-3101S
GND
CO1
VO2
D3
23
4
5
D2
VO1
+ +
CO2
12
Dropper Type Regulator ICs [2-output] SI-3101S
Notes:*1. Since PD(max) = (VIN – VO) • IO1+ (VIN – VO2) • IO2 = 18 (W), VIN (max), IO1(max) and IO2 (max) may be limited depending on
operating conditions. Refer to the Ta—PD curve to compute the corresponding values.*2. Refer to the dropout voltage.*3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN = 14V, IO1 = 0.05A or IO2 = 0.3A) drops to –5%.*4. Overvoltage protection circuit is built only in CH2 (VO2 side).*5. The indicated temperatures are junction temperatures.*6. All terminals, except VIN and GND, are open.
CO1 : Output capacitor (47 to 100µF, 50V)CO2 : Output capacitor (47 to 100µF, 50V)*1 CIN : Input capacitors (approx. 47µF).
Tantalum capacitors are recommended for CO1, CO2
and CIN, especially at low temperatures.*2D1, D2, D3 : Protection diode.
Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.)
*6
*1
*1
*1*2
*3
*3
*4
*5
±0.2
±0.2
±0.3
±0.2
±0.2
b
a
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.80
1
2
3
4
5
6
(V)5(A)I = 0
V =O1
C
4.5V
6V14V22V
V =IN
00
5 10 15 20 25
4.9
5.0
5.1
0mA
50mA
70mA
(A)I = 0O2
(V)5V =C
IO1=
00
0.05
1
2
3
4
5
6
0.1 0.15
(V)5(A)I = 0
V =O2
C
22V14V6V
V =
4.5V
0 10 20 30 6040 50 70
4.9
5.0
5.1
0
(A)I = 0O2
(V)5V =C
V =IN
6V 14V22V
0 0.1 0.2 0.3 0.60.4 0.5
4.9
5.0
5.1
0
I = 0O1
5V =C
V =IN
6V,14V
22V
0 102 4 6 80
6
5
4
2
1
3 ∞
71.4Ω
100ΩLoad resistor
0 20
10
5
05 10 15
(A)I = 0O1
(V)0V =c
0 1 2 3 4 5 60
5
6
4
3
2
1
V =IN
14V, 22V 6V
100
20 30 40
1
2
3
4
5
6
VO1
(V)5V =C
(mA)I= 5I =O1 O2 VO2
0 130 140 150 1600
1
2
3
4
5
6(V)6V =
(mA)I= 5I =O1 O2
IN
IN
0--20--30 20 6040 80 1000
5
10
15
20
200 • 200 • 2mm (2.3ºC/W)
100 • 100 • 2mm (5.2ºC/W)
75 • 75 • 2mm (7.6ºC/W)
115
OFF ON
00
5 10 15 20 25
4.9
5.0
5.1
(A)I = 0O1
(V)5V =C
0.5A
0.3A
I =O2
0A
13
Output current IO (A)
Line Regulation (2)
Out
put
vo
ltag
e V
O (V
)
Out
put
vo
ltag
e V
O2
(V)
Out
put
vo
ltag
e V
O (V
)O
utp
ut v
olta
ge
VO
1 (V
)
Out
put
vo
ltag
e V
O1
(V)
Out
put
vo
ltag
e V
O (V
)
Out
put
vo
ltag
e V
O (V
)
Input voltage V IN (V)
Line Regulation (1)
Out
put
vo
ltag
e V
O (V
)
Input voltage VIN (V)
Input voltage VIN (V)
Input voltage VIN (V) Input voltage VIN (V)
Load Regulation (1)
Rise Characteristics Quiescent Circuit Current
Thermal Protection Characteristics
Qui
esce
nt c
urre
nt
lq (m
A)
Overcurrent Protection Characteristics (1)
Output current IO (A)
Out
put
vo
ltag
e V
O2
(V)
Overcurrent Protection Characteristics (2) ON/OFF Control Characteristics
Output ON/OFF control voltage VC (V)
Ambient temperature Ta (ºC)
Output current IO (mA)
Out
put
vo
ltag
e V
O (V
)
Load Regulation (2)
Output current IO (A)
Operating temperature Ta (ºC)
Po
wer
Dis
sip
atio
n P
D (W
)
Ta—PD Characteristics Overvoltage Protection Characteristics
With silicone grease G746 (Shin-Etsu Chemical)Heatsink: aluminum
With infinite heatsink
Without heatsink
Note on Thermal Protection Characteristics:The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time.
(A)(V)
Electrical Characteristics
Dropper Type Regulator ICs [2-output] SI-3101S
Features Single input dual output <sub output (5V/0.04A), main output (5V/0.1A)> Main output can be externally turned ON/OFF (with ignition switch, etc.) <most suitable as memory backup power supply> Low standby current ( 0.8mA) Low dropout voltage 1V Built-in dropping type overcurrent, overvoltage and thermal protection circuits TO220 equivalent 5-terminal full-mold miniature package
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
External Dimensions (unit: mm)
Equivalent Circuit Diagram
Standard Circuit Diagram
Parameter Symbolmin typ max
Unit ConditionsRatings
(Ta=25ºC)
DC input voltage
Battery reverse connection
Output control terminal voltage
Output current
Power Dissipation
Output voltage
Dropout voltage
Input voltage
Quiescent circuit current
Overvoltage protection starting voltage
Thermal protection starting temperature
(Tj = 25ºC, VIN = 14V unless otherwise specified)
Junction temperature
Operating temperature
Storage temperature
Junction to case thermal resistance
Junction to ambient-air thermal resistance
VIN
VINB
VC
VIN
IO = 0.04A
IO = 0.1A
IO1 0.04A
IO2 0.1A
VIN = 6 to 30V, IO = 0.04A
IO1 = 0 to 0.04A
VIN = 6 to 30V, IO = 0.1A
IO2 = 0 to 0.1A
IO1 = 0A, VC = 0V
VC = 4.8V
VC = 3.2V
f = 100 to 120Hz
f = 100 to 120Hz
IO1 =0 to 0.04AIO2 =0 to 0.1A
6 30 V
4.80 5.00 5.20 V
4.80 5.00 5.20 V
–0.1 0.1 V
1.0 V
1.0 V
10 50 mV
10 50 mV
30 70 mV
40 70 mV
54 dB
54 dB
0.8 mA
0.06 A
0.15 A
4.2 4.5 4.8 V
3.2 3.5 3.8 V
100 µA
–100 µA
30 V
151 ºC
VO1
VO2
VO
VDIF1
VDIF2
VO LINE1
VO LINE2
VO LOAD1
VO LOAD2
RREJ1
RREJ2
Iq
I (S1) 1
I (S1) 2
VCH
VCL
ICH
ICL
VOVP
TTSD
IO1
IO2
PD1
PD2
Tj
TOP
Tstg
j-c
j-a
CH1
CH2
CH1
CH2
CH1
CH2
CH1
CH2
CH1
CH2
Ripple rejectionCH1
CH2
Overcurrent protection starting current
CH1
CH2
Output control voltageOutput ON
Output OFF
Output ON
Output OFFOutput control current
V
V One minute
With infinite heatsink
Stand-alone without heatsink
Stand-alone without heatsink
V
A
A
W
W
ºC
ºC
ºC
ºC/W
ºC/W
35
–13
VIN
0.04
0.1
22
1.8
–40 to +150
–40 to +105
–40 to +150
5.5
66.7
Line regulation
Load regulation
a
b
1 2 3 4 5
10.0
3.2
0.5
4.0
7.9
16.9
0.95
0.85
P1.7 • 4 = 6.8
4.2 ±0.2
2.8 ±0.2
2.6 ±0.1
3.9±0.7±0.7 ±0.7
8.2±0.7
0.45–0.1+0.2
–0.1+0.2
(2.0
)5.
0±0
.6(8
.0)
(17.
9)
(4.6
)
(4.3)
1. VIN2. VC (on/off)3. GND4. VO15. VO2
a: Part No.b: Lot No.
(Forming No. 1101)
VIN
VC
VO1
VO2
GND
1
2
4
5
3
REFD
RIV
ED
RIV
E
DET
OCP
ERRTSD
OCP
DETOVP
CONT
ERR
CIN
VC
+
D1
VIN
1SI-3102S
GND
CO1
VO2
D3
23
4
5
D2
VO1
+ +
CO2
14
Dropper Type Regulator ICs [2-output] SI-3102S
Notes:*1. Since PD(max) = (VIN – VO) • IO1+ (VIN – VO2) • IO2 = 22 (W), VIN (max), IO1(max) and IO2 (max) may be limited depending on
operating conditions. Refer to the Ta—PD curve to compute the corresponding values.*2. Refer to the dropout voltage.*3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN = 14V, IO1 = 0.04A or IO2 = 0.1A) drops to –5%.*4. Overvoltage protection circuit is built only in CH2 (VO2 side).*5. The indicated temperatures are junction temperatures.*6. All terminals, except VIN and GND, are open.
CO1 : Output capacitor (47 to 100µF, 50V)CO2 : Output capacitor (47 to 100µF, 50V)*1 CIN : Input capacitors (approx. 47µF).
Tantalum capacitors are recommended, for CO1, CO2 and CIN, especially at low temperatures.
*2D1, D2, D3 : Protection diode. Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.)
*6
*1
*1
*1*2
*3
*3
*4
*5
Channel-channel voltage difference(VO1—VO2)
±0.2
±0.2
±0.2
±0.2
±0.3
±0.15
0
4.90
4.95
5.00
5.05
5.10
4.855 10 15 20 25 30 35 0
4.90
4.95
5.00
5.05
5.10
4.855 10 15 20 25 30 35 0
4.90
4.95
5.00
5.05
5.10
4.8510 20 30 5040
VIN = VC
IO2 = 5mAVIN = VC
IO1 = 5mA
VC = 0VIO1 = 0A
0A20mA
40mA
IO1 = 0A50mA
100mA
IO2 =
VIN = VC
6V14V
30V
VIN =
0
4.90
4.95
5.00
5.05
5.10
4.8520 40 60 10080
0
2
1
3
4
5
6
020 40 60 12010080 0
1
2
3
4
5
6
00.1 0.2 0.50.40.3
26
1
2
3
4
5
6
028 30 38363432
0
2
3
4
5
6
0
1
1 2 3 5 6 74 0
4
6
8
10
12
0
2
5 10 15 25 30 3520
VIN = VC
VIN = VC
IO2 = 5mAVIN = VC
IO1 = 5mA
VIN = VC
IO2 = 5mA
0
1
2
3
4
5
6
01 2 6543
VIN = 14VIO2 = 5mA
100
1
2
3
4
5
6
0120 140 240220200180 –40
5
10
15
20
25
0–20 0 20 16014012060 80 10040
VIN = 6VIO1 = IO2 = 5mA
6V,14V
30V
VIN =
6V14V30V
VIN = 6V
14V30V
VIN =
IO1 = 0A20mA40mA
200 • 200 • 2mm(2.3ºC/W)
100 • 100 • 2mm(5.2ºC/W)
75 • 75 • 2mm(7.6ºC/W)
OFF
ON
15
Output current IO (mA)
Line Regulation (2)
Out
put
vo
ltag
e V
O (V
)
Out
put
vo
ltag
e V
O2
(V)
Out
put
vo
ltag
e V
O (V
)O
utp
ut v
olta
ge
VO
1 (V
)
Out
put
vo
ltag
e V
O1
(V)
Out
put
vo
ltag
e V
O (V
)
Out
put
vo
ltag
e V
O (V
)
Input voltage VIN (V)
Line Regulation (1)
Out
put
vo
ltag
e V
O (V
)
Input voltage V IN (V)
Input voltage VIN (V)
Input voltage VIN (V) Input voltage VIN (V)
Load Regulation (1)
Rise Characteristics Quiescent Circuit Current
Thermal Protection Characteristics
Qui
esce
nt c
urre
nt
lq (m
A)
Overcurrent Protection Characteristics (1)
Output current IO2 (A)
Out
put
vo
ltag
e V
O2
(V)
Overcurrent Protection Characteristics (2) ON/OFF Control Characteristics
Output ON/OFF control voltage VC (V)
Ambient temperature Ta (ºC)
Output current IO (mA)
Out
put
vo
ltag
e V
O (V
)
Load Regulation (2)
Output current IO (mA)
Operating temperature Ta (ºC)
Po
wer
Dis
sip
atio
n P
D (W
)
Ta—PD Characteristics Overvoltage Protection Characteristics
With silicone grease G746 (Shin-Etsu Chemical)Heatsink: aluminum
With infinite heatsink
Without heatsink
Note on Thermal Protection Characteristics:The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time.
VO1
VO2
Electrical Characteristics
Dropper Type Regulator ICs [2-output] SI-3102S
Parameter Symbol Unit ConditionsRatingsApplicable terminals
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
Terminal voltage
Storage temperature
NMI judge voltage
VSC output voltage
VS output voltage
Reset signal output time
Reset cycle
Standby signal output time
(Ta = 25°C unless otherwise specified)
Operating temperature
Power dissipation
VIN (1)
VIN (2)
VSC
VCC = 5.2 to 16V, IO = –350mA
BAI = 4.2 to 16V, ISC = –0.2mA
NMIC = 0V
V
5
4
10
75
50
25
5.03
3.8
4.97
4.2
V
0.3
5.1 V
10
5
V
µs
ms
µs
VS
VS –VSC voltage difference VCC = 5.2V, ISC = –50mA0.3 V∆VS
BAI input current BAI = 4.9 to 16V, ISC = –0.2mA0.6 mAIBAI
VCC input current VCC = 3 to 16V 5 mAICC
VB input current VCC = 3 to 16V25 mAIB
VS input current VCC = BAI = 3 to 16V, ISC = 0mA20 mAIS
NMIC input current VCC = BAI = 14V–0.1 –0.4 mAINMIC
W/D input current VCC = BAI = 14V–0.1 –0.4 mAIW/D
RSTTC input current VCC = BAI = 14V–0.1
5
–0.4 mAIRTC
4.9
–0.04
–0.04
–0.04
0.12
VNIL
∆VN
VNOH
VNOL
VSOH
VSOL
VROH
VROL
VUOH
VUOL
VTOH
VTOL
TNR
W/D signal stop detect period 10 12.5
50
80
10
2
40
5
VS–0.5
VS–0.5
VS–0.5
VS–0.5
VS–0.5
W/D fail judge frequency kHzFFH
Out enable release time msTWE
msTWS
Reset period 20
40
60
msTRP
TRC
Reset release time 90
60
30
15
msTRE
Standby release time 20 ms
V
V
V
V
V
V
V
V
V
V
TST
0.6
0.6
0.6
0.6
0.6
TRS
Tstg
Top
PD
Lo
NMI output voltage
STBY output voltage
RESET output voltage
OUTE output voltage
OUTE output voltage
Isource = –1mA
Isink = 0.5mA
Isource = –1mA
Isink = 0.5mA
Isource = –1mA
Isink = 0.5mA
Isource = –1mA
Isink = 0.5mA
Isource = –1mA
Isink = 0.5mA
Hi
Lo
Hi
Lo
Hi
Lo
Hi
Lo
Hi
Lo
V
°C
°C
W Ta = 25°C
–0.3 to 32BAI, VCC, VNMIC
VS, NMIC, RSTTC, OUTE
VSC, NMI, RESET, OUTE
W/D, STBY
—
—
—
V–0.3 to 7
–40 to +125
–40 to +105
1.4
Standard Connection Diagram
Circuit Block Diagram
Timing Chart
External Dimensions (unit: mm)Features High accuracy output of 5V±30mV Memory backup power supply 4V±0.2V Power on reset function Supply voltage monitor function Watch dog timer CR not required for setting external time constant
Dropper Type System Regulator ICs SI-3322S
16
Notes: The direction of current flowing into the IC is positive (+).
VCCVNIL
VNIL+∆VN
VS
0VVSC
NMI
TST
TRE
TWS
TRP
TRCTWE
TNR
TRSSTBY
RESET
OUTE
W/D
OUTE
HI or Lo
Power on Power offW/D input stop (microcomputer
runaway)
W/D input start (microcomputer
resets)
0V
(BAI=14V)
IG. SW
BATT
47µF
47µF
47µFA/D converter, I/O circuit, etc.
68µF
+
+
+
+120Ω
R1
R2
6VCC VCC AVCC
OUTE OUTE
VB VS VSC
NMIBAI
GND
VNMIC
1
8
13 11 10 16 14
5 4 3 2
9
15
12
SI-3322S
OPEN or GND
Logic circuit
Micro-computer
NMI
NMI Control
STBY STBY
RESET RESET
NMIC W/D W/D GNDRSTTC
R1,R2: NMI judge voltage (5V typ) variable resistor NMI judge voltage (R1 + R2) • 2.5V/R2 R1, R2 2k Normally, VNMIC terminal is open.
RSTTC: Normally open. GND connected when TRE is to be halved.
VCC VB VS VSC
NMI
VNMIC
BAI
6
1
GND 8
+ ++
5 4
Start circuit
NMI judgecircuit
Reference oscillation circuit
Main regulator
Backup regulator
Current limit circuit
3 2
9
15
+–
STBY
12
14
RESET
RSTTC16
W/D1011
Counter
OUTE control circuit
OUTEOUTE13
NMIC
STBY control circuit
RESETcontrol circuit
Frequency comparator
+–
+–
Index area
1 2 3
SI-3322SSKA
Coplanarity (height difference among leads) 0.1mm max.
Adhesive surface
Lot
Lot
• 45°
2.352.65
10.1010.50
7.407.60
0.250.75
0.401.27
10.0010.65
0.100.30
0.230.32
0.330.51
1.27 BSC
0° to 8°
Hysteresis
17
Electrical Characteristics
0 5 10 15 20 25
VS (V
)
VCC (V)
5.03
5.02
5.01
5
4.99
4.98
4.97
5.03
5.02
5.01
5
4.99
4.98
4.97 0
1
2
3
4
5
6
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VS (V
)
IO (A)
0 0.5 1 1.5 20
1
2
3
4
5
6
VS (V
)
IO (A)
0 5 10 15 200
0
100
200
300
400
500
0
100
200
300
400
500
5
10
15
20
0
1
2
3
4
5
I S (m
A)
VCC (V)
0 5 10 15 200
5
10
15
20
I B (m
A)
VCC (V)
0 5 10 15 200
2
4
I CC (m
A)
VCC (V)
3
1
5
0 2 4 6 8 10
VS (V
)
VCC (V)
0
0 20 40 60 80 100 120
5 10 15 200
1
2
3
4
5
6
0 2 4 6 8 10
0
1
2
3
4
5
6
4.5 4.7 4.9 5.1 5.3 5.50 5 10 15 20
VS
C (V
)
VS
C (V
)
I BA
I (µA
)
∆VS (m
V)
NM
I (V
)
BAI (V) ISC (A)
BAI (V) ISC (mA) VCC (V)
IO = 0A
0.4A
IO = 0A
0.4A
VCC = 5.2V12V
VCC = 7V
12V
No load
No load
No load
Dropper Type System Regulator ICs SI-3322S
VS Load Regulation VS Line Regulation VS Rise Characteristics
VCC Input Current VB Input Current
BAI Input Current
VSC Rise Characteristics VSC Overcurrent Protection Characteristics VS Input Current
VS Overcurrent Protection Characteristics
NMI Judge Voltage Characteristics VS-VSC Voltage Difference
Parameter Symbol Unit RemarksRatings
Absolute Maximum Ratings
Electrical CharacteristicsParameter Symbol min typ max Unit Conditions
Ratings
DC input voltage
Output control terminal voltage
Output current CH1
CH2
MODE terminal input voltage
W/D/C terminal input voltage
TC terminal input voltage
CK terminal input voltage
Vo1-fail terminal output voltage
Reset terminal output voltage
Junction temperature
Storage temperature
Thermal resistance (junction to case) Thermal resistance (junction to ambient air)
Input voltage
CH1 Output voltage CH1
CH2 CH1
Dropout voltage CH1CH2
Ripple rejectionCH1CH2
Quiescent circuit current GND current
CH1CH2CH1CH2
EN output control voltage
ON
OFFVo1-fail terminal LOW voltageVo1-fail terminal HI voltageReset terminal LOW voltageReset terminal HI voltage
CH1Reset detect voltage
CH2
CH1CH2
Power on reset delay timeW/D timeW/D pulse timeMODE terminal control voltage
ONOFF
W/D/C terminal control voltageONOFF
CK terminal control voltageON
OFF
VIN
EN
Io1
Io2
MODE
W/D/C
TC
CK
Vo1-fail
RESET
Tj
Tstg
j-c
j-a
–13 to 35
40
–0.3 to 35
40
0.4
0.2
–0.3 to 7
–40 to 150
–40 to 150
4.1
38
VIN
Vo1 Vo1 Vo2
VDIF11VDIF12VDIF2RREJ1RREJ2
Iq
IGND
Is11Is21Is21Is22
VENth
IENH1IENH2IENL
VfailLVfailHVRSLVRSH
Vo1thHVo1thLVo2thHVo2thL∆Vo1th∆Vo2th
tdly
twd
twdp
VmodethImodeHImodeL
Vw/d/cthIw/d/cHIw/d/cLVckthIckHIckL
Io1 = 0.4AIo1 = 0.2A, Tj = 25°CIo2 = 0.2A
f = 100 to 200Hz
VIN = 16V, EN = 0VVIN = 35V, EN = 0V
Io1 = Io2 = 0.2AVo1 = 4.5VVo2 = 2.8VVo1 = 0VVo2 = 0VTj = –40 to 125°C*8
EN = 6.4V, Tj = –40 to 125°CEN = 3.51V, Tj = –40 to 125°CEN = 0V, Tj = –40 to 125°CIsink = 250µA, (Pull-up resistance 20kΩ typ)Isource = 15µAIsink = 250µA, (Pull-up resistance 20kΩ typ)Isource = 15µAVrs, Vfail 4.5VVrs, Vfail 0.8VVrs 3.0VVrs 0.8V∆Vo1th = Vo1thH-Vo1thL∆Vo2th = Vo2thH-Vo2thLMin. set time: 6mSMin. set time: 4mSMin. set time: 400µS
MODE = 5VMODE = 0V, Tj = –40 to 125°C*7
W/D/C = 5VW/D/C = 0V, Tj = –40 to 125°CMin. clock pulse time = 5µS (Duty 50%)CK = 5VCK = 0V, Tj = –40 to 125°C
V
V
V
db
µA
mAmA
A
A
V
µA
VVVVVVVVVVSSSV
µA
V
µA
V
µA
5.00 5.00 3.30
545410505
70
0.72 • Rtc • Ctc0.54 • Rtc • Ctc0.06 • Rtc • Ctc
Vo1+VDIF1 *3
4.90 4.85 3.15
0.4020.2010.4020.2011.00.9
–1.0
Vo1–0.8V *5
Vo1–0.8V *5
4.05
3.00
0.70 • Rtc • Ctc0.52 • Rtc • Ctc0.04 • Rtc • Ctc
1.0
–1.01.0
–1.01.0
–1.0
35 *4
5.10 5.15 3.45 0.5
0.250.5
5025010
1001.800.801.800.803.53.550301.00.5
0.5
Vo1 • 0.97
Vo2 • 0.985
0.2550.105
0.74 • Rtc • Ctc0.56 • Rtc • Ctc0.08 • Rtc • Ctc
3.02001.03.02001.03.02001.0
V
V
A
V
°C°C
°C/W
°C/W
Reverse connection 1 min max.
400mS
400mS
With infinite heatsink
With glass epoxy + copper foil board (size 5.0 x 7.4cm; t: glass epoxy = 1.6mm/copper foil = 18µm)
External Dimensions (unit: mm)Features Single input dual output (ch1: 5V/0.4A, ch2: 3.3V/0.2A) Power on reset function Watchdog timer Built-in drooping type overcurrent and thermal protection circuits (ch1)
Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3004
18
Notes:*3: Refer to dropout voltage.*4: Since PD(max) = (VIN– VO1) • (IO1+ IO2) + (VIN • Iq) + (VO1– VO2) • IO2 = 30W, VIN(max), IO1(max) and IO2(max) may be limited depending on operating conditions.*5: The Vo1-fail and RESET terminals are pulled up in the IC; may be directly connected to logic circuits.*6: The thermal protection function is built in VO1 (CH1 side) only. The design thermal protection starting temperature is 155 °C (min.) and 165°C (typ). These values represent the design warranty.*7: The threshold voltage at the W/D/C terminals is determined by the presence/absence of WD operation (occurrence of RESET signal pulses). The W/D/C function is assumed to be OFF during the period when RESET pulses occur.*8: The TOFF-EN operation (VEN: 5V 0V) for Tj=150°C is 16mS (0.32V/mS) max.
VIN = Vo1+VDIF1 to 18V, Io1 = 0 to 0.4A, Tj = –40 to 125°CVIN = Vo1+VDIF1 to 18V, Io1 = 0 to 0.4A, Tj = –40 to 150°CVIN = Vo2+VDIF1+VDIF2 to 18V, Io1 = 0 to 0.2A
12.2±0.2
1.0
2.5±0
.27.
5±0.2
10.5±0.2
1.27±0.25
16
1 8
9
+0.1–0.05
0.4+0.15–0.05
0.25+0.15–0.05
2.0
+0.
2–
0.8
Fin thickness
Standard Connection Diagram
Timing Chart
+ +
+
+
D1
D2
Vin
EN
MODECin
GNDW/D/C CK TC
RESET
Vo1
Co1
Rtc
CtcCo2
Vo1
Vo2
Vo1 fail
Battery
SPF3004
Cin: Capacitor (39µF) for oscillation preventionCO1: Output capacitor (39µF)CO2: Output capacitor (39µF) Tantalum capacitors are recommended especially for low temperatures.D1, D2: Protection diodes. Required as protection against reverse biasing between input and output (Recommended diode: SANKEN EU2Z).
Vin
EN
Vo1
Vo1 fail(Vo1 pull-up)
Vo1 pull-up status
Reset operation
Reset operation
OCP operation
EN (ON) operation EN (OFF) operation
OCP operation
W/D/C(Vo1 system connection) W/D
Stop period
TC(3.3 pull-up)
Vo2
RESET
CKOpen status
Open status
twdp
twd
tdly tdly
tdly-twdp
Vmodeth
Vo2thLVo2thH
Vo1thH Vo1thL
(Ta=25ºC)
Overcurrent protection starting current
Residual current at a short
EN output control current
Reset detect voltage hysteresis width
MODE terminal control current
W/D/C terminal control current
CK terminal control current
Load
Load
MODE(Vo1 system connection)
19
Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3004
Electrical Characteristics
0 2 4 6 8 100
4
2
6
-40 0 25 50 85 125 1500
20
10
40
30
0 0.2 0.4 0.60
0.5
1.0
0 10 20 30 40
4.90
5.00
5.10
IO1=0A 0.2A 0.4A
0 10 20 30 40
3.40
3.30
3.50
IO2=0A 0.1A 0.2A
1 2 3 40
4
2
6
0
5.10
5.00
4.90
0 0.1 0.2 0.3 0.4
VIN=6V 10V 14V 18V
0 0.05 0.10 0.15 0.200
3.50
3.40
3.30
VIN=6V 10V 14V 18V
0
20
40
10 20 30 40
IO1=0.4A
IO1=0.2AIO1=0A
IO2=0A 0.2A
IO1=0A 0.4A
100 120 140 160 200180
2
6
4
IO1=5mA
0 0.5 1.00
4
2
6
0 0.2 0.4 0.60
4
2
VIN=6V 10V 14V 18V
VIN=6V 10V 14V 18V
Infinite heatsink equivalent (Tc=25°C)
Copper foil area (5.0•7.4mm, t=1µm)
Line Regulation (V01) Rise Characteristics of Output Voltage Line Regulation (V02)
Load Regulation (V02) Dropout Voltage (V01)
Thermal Protection Characteristics
Overcurrent Protection Characteristics (V01) Overcurrent Protection Characteristics (V02) GND Current
Load Regulation (V01)
Ta—PD Characteristics EN Terminal Output Voltage
Out
put
vo
ltag
e V
O1
(V)
GN
D c
urre
nt
I GN
D (m
A)
Out
put
vo
ltag
e V
O1
(V)
Out
put
vo
ltag
e V
O1
(V)
Out
put
vo
ltag
e V
O1
(V)
Out
put
vo
ltag
e V
O2
(V)
Out
put
vo
ltag
e V
O2
(V)
Out
put
vo
ltag
e V
O1,
VO
2 (V
)
Dro
po
ut v
olta
ge
V
dif1
(V)
Out
put
vo
ltag
e V
O2
(V)
Out
put
vo
ltag
e V
O1
(V)
Po
wer
dis
sip
atio
n P
D (W
)
Output current IO1 (A)
Input voltage VIN (V)Input voltage V IN (V)
EN terminal voltage VEN (V)
Output current IO2 (A) Output current IO1 (A)
Output current IO2 (A)Input voltage VIN (V)
Ambient temperature Ta (ºC)
Input voltage VIN (V)
Output current IO1 (A)
Operating temperature Ta (ºC)
Parameter Symbol Unit RemarksRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
DC input voltage
Vo1, Vo2 output control terminal voltage
Vo2 output control terminal voltage
Output current CH1
CH2
TC terminal input voltage
CK terminal input voltage
W/D/C terminal input voltage
Reset terminal output voltage
Power dissipation
Junction temperature
Operating temperature
Storage temperature
Input voltage
Output voltageCH1
CH2
Dropout voltage CH1
CH2
Ripple rejectionCH1
CH2
Quiescent circuit current
GND current
CH1
CH2
CH1
CH2
EN output control voltage
ON
OFF
Reset terminal LOW voltage
Reset terminal HI voltage
Reset detect voltage CH
Power on reset delay time
W/D time
W/D pulse time
CK terminal control voltage
ON
OFF
Vc output control voltage
Vc output control current
W/D/C terminal control voltage
ON
OFF
VIN1
VIN2
EN
VC
Io1
Io2
TC
CK
W/D/C
RESET
PD1
PD2
Tj
Top
Tstg
j-c
j-a
–13 to 35
–0.3 to 35
–0.3 to 35
0.4
0.2
–0.3 to 7
18.6
2.97
–40 to 150
–40 to 105
–40 to 150
6.7
42
VIN1, 2
Vo1
Vo2
VDIF1
VDIF2
RREJ1
RREJ2
Iq
IGND
Is11
Is21
Is21
Is22
VENth
IENH
IENL
VRSL
VRSH
Vo1thH
Vo1thL
tdly
twd
twdp
Vckth
IckH
IckL
Vcth
IcH
IcL
Vw/d/cth
Iw/d/cH
Iw/d/cL
VIN1 = 6 to 18V, Io = 0 to 0.3A
VIN2 = 6 to 18V, Io = 0 to 0.3A
f = 100 to 120Hz
VIN1 = 16V, VEN = 0V
VIN1 = 35V, VEN = 0V
Io1 = Io2 = 0.2A
Vo1 = 4.5V
Vo2 = 4.5V
Vo1 = 0V
Vo2 = 0V
EN = 5V
EN = 0V
Isink = 250µA (Pull-up resistance 20kΩ typ)
Isource = 15µA
Vrs 4.5V
Vrs 0.8V
Min. set time: 6mS
Min. set time: 4mS
Min. set time: 400µS
VCK = 5V
VCK = 0V
Vc = 5V
Vc = 0V
VW/D/C = 5V
VW/D/C = 0V
V
V
V
db
µA
mA
mA
A
A
V
µA
V
V
V
V
S
S
S
V
µA
V
µA
V
µA
5.00
5.00
54
54
10
50
5
70
1.26 • Rtc • Ctc
1.03 • Rtc • Ctc
0.13 • Rtc • Ctc
Vo1+VDIF1
4.85
4.85
0.402
0.201
0.402
0.201
0.9
–1.0
Vo1-0.8V
4.05
1.18 • Rtc • Ctc
0.93 • Rtc • Ctc
0.07 • Rtc • Ctc
1.0
–1.0
1.0
–1.0
1.0
–1.0
35
5.15
5.15
0.5
0.5
50
250
10
100
1.8
0.8
1.8
0.8
3.5
50
1.0
0.5
Vo1• 0.97
1.35 • Rtc • Ctc
1.13 • Rtc • Ctc
0.19 • Rtc • Ctc
3.0
200
1.0
3.5
300
1.0
3.0
200
1.0
V
V
V
A
V
W
°C
°C
°C
°C/W
°C/W
Reverse connection 1 min max.
With an infinite heatsink mounted.
With an infinite heatsink mounted.
External Dimensions (unit: mm)Features Dual input and dual output (ch1: 5V/0.4A, ch2: 5V/0.2A) Power on reset function Watchdog timer Built-in drooping type overcurrent and thermal protection circuits (ch1)
Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3006
20
12.2±0.2
1.0
2.5±0
.27.
5±0.2
10.5±0.2
1.27±0.25
16
1 8
9
+0.1–0.05
0.4+0.15–0.05
0.25+0.15–0.05
2.0
+0.
2–
0.8
Notes: *1: With glass epoxy + copper foil board (size 5.0 • 7.4cm; t: glass epoxy = 1.6mm / copper foil = 18µm)
*1
*1
*2, 3
*4
Standard Connection Diagram
Timing Chart
Circuit Block Diagram
Vin1(3 Pin)
Vo1(4 Pin)
Vo2(7 Pin)
RESET(14 Pin)
W/D/C(11 Pin)
Vin2(6 Pin)
Vc(5 Pin)
GND(1,9,12,13 Pin)
EN(2 Pin)
TC(8 Pin)
CK(10 Pin)
ENTSD
Vc(Vo2: EN)
Drive1OCP1
Vo1RESETW/D
Drive2OCP2
Err.
Err.
DET
DET
Battery
Cin Vc
GND
D2
D1
Vin1
Vo2
Vo1
Co1
Load
Load Co2
Vin2EN
CK W/D/CTc
RESET Rtc
Ctc
–
–
–
SFP3006
3Pin 4Pin
14Pin
7Pin
8Pin11Pin10Pin
1,9,12,13Pin
2Pin
6Pin
5Pin
Vin1,Vin2(+B)
EN
Vo1(BACK UP power supply)
Vo2(Main power supply)
Vo
TC
CK
W/D/C
RESETtdly twd
twdpW/D OFF mode
ENthH
Vo1thH
ENthL
Vo1thL
* The regulator IC may be used only with Vo1 (single output power supply) by selecting NC (open) for 5Pin:Vc, 6Pin:Vin2 and 7Pin: Vo2.
(Ta=25ºC)
Min. clock pulse time: 5µs (Duty 50%)
Thermal resistance (junction to case)
Thermal resistance (junction to ambient air)
Overcurrent protection starting current
Residual current at a short
EN output control current
CK terminal control current
W/D/C terminal control current
Notes:*2: Refer to Dropout Voltage.*3: Since PD(max) = (VIN– VO1) • IO1+ (VIN2– VO2) • IO2 + (VIN • Iq) = 22W, VIN(max), IO1(max) and IO2(max) may be limited depending on operating conditions.*4: The RESET terminal is pulled up in the IC; may be directly connected to logic circuits.*6: The thermal protection function is built in VO1 (CH1 side) only. The design thermal protection starting temperature is 151 °C (min.) and 165°C (typ). These values represent the design warranty.
Fin thickness
Cin: Capacitor (39µF) for oscillation preventionCO1: Output capacitor (39µF)CO2: Output capacitor (39µF) Tantalum capacitors are recommended particularly for low temperatures (tantalum capacitors of about 0.47µ F in parallel).D1, D2: Protection diodes. Required for protection against reverse biasing between input and output (Recommended diode: SANKEN EU2Z).
21
Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3006
Electrical Characteristics
0 2 4 6 8 100
4
2
6
-50 0 50 100 1500
8
4
20
16
12
0 2 4 6 8 100
6
4
2
0 5 10 15 20 25 30
4.95
5.00
4.90
5.10
5.05
100 125 150 175 2000
4
2
6
5.10
5.00
5.05
4.90
4.95
0 5 10 15 2520 30 0 0.1 0.2 0.3 0.44.90
5.10
5.00
5.05
4.95
0 0.05 0.10 0.15 0.204.90
5.10
5.00
5.05
4.95
0
0.2
0.4
0.6
0.20 0.4
0 0.2 0.4 0.6
2
0
6
4
0 0.2 0.60.4 0.80
6
4
2
VIN=6V 10V 14V 18V
VIN=6V 10V 14V 18V
IO1=5mA
Copper foil area(5.0•7.4mm, t=18µm)
IO1=0A 0.2A 0.4A
IO2=0A 0.2A 0.4A
IO1=0A 0.1A 0.2A
IO1=0A 0.2A 0.4A
VIN=6V 10V 14V 18V
Ta=150°C25°C
–40°C0
0.2
0.4
0.6
0.10 0.2
Ta=150°C25°C
–40°C
VIN=6V 10V 14V 18V
Infinite heatsink equivalent(Tc=25°C)
Rise Characteristics of Output Voltage (V02) Rise Characteristics of Output Voltage (V01) Line Regulation (V01)
Load Regulation (V01) Load Regulation (V02)
Overcurrent Protection Characteristics (V02)
Dropout Voltage (V02) Overcurrent Protection Characteristics (V01) Dropout Voltage (V01)
Line Regulation (V02)
Ta—PD Characteristics Thermal Protection Characteristics
Out
put
vo
ltag
e V
O2
(V)
Dro
po
ut v
olta
ge
V
dif1
(V)
Out
put
vo
ltag
e V
O1
(V)
Dro
po
ut v
olta
ge
V
dif2
(V)
Out
put
vo
ltag
e V
O2
(V)
Out
put
vo
ltag
e V
O1
(V)
Out
put
vo
ltag
e V
O1
(V)
Out
put
vo
ltag
e V
O1
(V)
Out
put
vo
ltag
e V
O2
(V)
Out
put
vo
ltag
e V
O1
(V)
Out
put
vo
ltag
e V
O2
(V)
Po
wer
dis
sip
atio
n P
D (W
)
Output current IO2 (A)
Input voltage VIN (V)Input voltage V IN (V)
Ambient temperature Ta (ºC)
Output current IO1 (A) Output current IO2 (A)
Output current IO1 (A)Output current IO1 (A)
Output current IO2 (A)
Input voltage VIN (V)
Input voltage VIN (V)
Operating temperature Ta (ºC)
Features Output current of 3A (Ta = 25ºC, VIN = 8 to 18V) High efficiency of 82% (VIN = 14V, IO = 2A) Requires 5 external components only Built-in reference oscillator (60kHz) Phase internally corrected Output voltage internally corrected Built-in overcurrent and thermal protection circuits Built-in soft start circuit
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Recommended Operating Conditions
External Dimensions (unit: mm)
Standard Circuit Diagram
Parameter Symbolmin typ max
min typ max
Unit ConditionsRatings
(Ta=25ºC)
Input voltage
Output voltage
SWOUT terminal voltage
Power Dissipation
Output voltage
Load regulation
Line regulation
Discharge resistance
(VIN = 14V, IOUT = 2A, Tj = 25ºC unless otherwise specified)
Junction temperature
Storage temperature
Junction to case thermal resistance
Junction to ambient-air thermal resistance
VIN
IO
VSWOUT
VO
VIN = 8 to 18V
VSSL = 0.2V
VIN = 0V
4.80 5.00
82
50 60
5
3.1
5.20
100
V
50 mV
0.2
25
200
35
V
15 µA
kΩ
mV VO LINE
VO LOAD
Efficiency
IO = 0.5 to 3A
%
Oscillation frequency 70 kHzfOSC
Quiescent circuit current IO = 0A10 mAIq
Overcurrent protection starting current
AIS
VSSL
I SSL
RDIS
PD1
PD2
Tj
Tstg
j-c
j-a
Low level voltage
Source current when low
Soft start terminal
V
A
With infinite heatsink
Stand-alone
V
W
W
ºC
ºC
ºC/W
ºC/W
35
3
–1
22
1.8
–40 to +150
–40 to +125
5.5
66.7
Notes: *1. Efficiency is calculated by the following equation:
*2. A dropping-type overcurrent protection circuit is built in the IC.*3. An external voltage may not be applied to the soft start terminal. As shown in the diagram to the right, use this IC in the soft start mode with a capacitor or in the open-collector drive mode with a transistor. Leave the soft start terminal open when not using it since it is already pulled up in the IC.
a
b
1 2 3 4 5
10.0
3.2
0.5
4.0
7.9
16.9
0.95
0.85
P1.7 •4 =6.8
4.2±0.2
2.8±0.2
2.6 ±0.1
3.9
8.2 ±0.7
±0.7
0.45–0.1+0.2
–0.1+0.2
(2.0
)5.
0±0
.6(8
.0)
(17.
9)
(4.6
)
(4.3)
1. VIN2. SWOUT3. GND4. VS5. SS
a: Part No.b: Lot No.
(Forming No. 1101)
Parameter Symbol Unit ConditionsRatings
Input voltage
Output current
Operating temperature
VIN
IO
Top
V
A
Ta—PD characteristicsºC
8
0.5
–40
18
3
+85
22
Switching Type Regulator ICs SI-3201S
VO • IO
VIN • I IN = • 100 (%)
SS5 SS
C3C3
5SS5
SI-3201S SI-3201S SI-3201S
SI-3201SVIN
VIN
C1
C3
C2
C1: 1000µFC2: 1000µF
L1: 250µHD1: RK46 (Sanken)
VOSWOUT
SW TrL1
D1
VS
GND GND
GND
5
3
4
21
SS
++
a
ed
b
g
c
h
i
f
a: Internal power supplyb: Thermal protectionc: Reference oscillatord: Resete: Latch & driver
f : Comparatorg: Overcurrent protectionh: Error amplifier i : Reference voltage
Cautions:(1) A high-ripple current flows through C1 and C2. Use high-ripple
type 1000µF or higher capacitors with low internal resistance. Refer to the respective data books for more information on reliability and electrical characteristics of the capacitor.
(2) C3 is a capacitor used for soft start.(3) L1 should be a choke coil with a low core loss for switching
power supplies.(4) Use a Schottky barrier diode for D1 and make sure that the
reverse voltage applied to the 2nd terminal (SWOUT terminal) is within the maximum ratings (–1V). If you use a fast-recovery diode, the recovery voltage and the ON forward voltage may cause a reversed-bias voltage exceeding the maximum ratings to be applied to the 2nd terminal (SWOUT terminal). Applying a reversed-bias voltage exceeding the maximum rating to the 2nd terminal (SWOUT terminal) may damage the IC.
(5) The 4th terminal (VS) is an output voltage detection terminal. Since this terminal has a high impedance, connect it to the positive (+) terminal of C2 via the shortest possible route.
(6) Leave the 5th terminal (soft start terminal) open when not using it. It is pulled up internally.
(7) To ensure optimum operating environment, connect the high-frequency current line with minimum wiring length.
*1
*3
*2
±0.2
±0.2
±0.2
±0.2
±0.3
±0.15
±0.7±0.7
= 10VV 18VIN =
7V =
04.85
0.5 1.0 1.5 2.0 2.5 3.0
4.90
4.95
5.00
5.05
5.10
5.15
4.85
4.90
4.95
5.00
5.05
5.10
0 5 10 15 20 25 30 35
I 0A = o1A = 2A = 3A =
040
50
60
70
80
90
0.5 1.0 1.5 2.0 2.5 3.0
= 10VV 18VIN =
7V =
00
6
5
4
3
2
1
2 4 6 8 10
I 0A=o1A2A3A
===
0
6
5
4
3
2
1
0 1.0 2.0 3.0 4.0 5.0
T 100, 25, 20ºCC = --+
00
6
5
4
3
2
1
1.0 2.0 3.0 4.0 5.0
V 18V=
IN
10V7V
=
=
–40 0 40 80 120 160
10
0
5
15
20
25
23
Output current IO (A)
Line Regulation
Out
put
vo
ltag
e V
O (V
)
Out
put
vo
ltag
e V
O (V
)
Out
put
vo
ltag
e V
O (V
)
Out
put
vo
ltag
e V
O (V
)
Input voltage VIN (V) Input voltage VIN (V)
Load Regulation Rise Characteristics
Overcurrent Protection Characteristics
Output current IO (A)
Out
put
vo
ltag
e V
O (V
)
Overcurrent Protection Temperature Characteristics Efficiency Curve
Output current IO (A)
Output current IO (A)
Operating temperature Ta (ºC)
Po
wer
Dis
sip
atio
n P
D (W
)
Ta—PD Characteristics
With silicone greaseHeatsink: aluminum
With infinite heatsink
Eff
icie
ncy
(%
)
Electrical Characteristics
Switching Type Regulator ICs SI-3201S
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
(Ta=25ºC)
Power supply voltage
Input terminal voltage
DIAG output applied voltage
Voltage across power supply and drive terminal
Power dissipation
Input current
Operating power supply voltage
Quiescent circuit current
Open load detection resistor
Output transfer time
DIAG output transfer time
(VBopr=14V, Ta=25ºC unless otherwise specified)
Junction temperature
Operating temperature
Storage temperature
VB
VIN
VDIAG
VBopr
Lo output
VIN = 5V
VIN = 0V
VO = VBopr –1.9V
IO = 1A
IO = 1A
IO = 1A
IO = 1A
V
5 12
6.0
0.8
0
16
mA
1.0
100
mA
30
8 30
15
10
15
30
30
30
µA
kΩ
µs
µs
µs
µs
Iq
Threshold input voltage 3.0 VVINth
IIN
IIN
Overcurrent protection starting current
1.6
1
AIS
Ropen
Leak current of DIAG output VDIAG = 5V100 µAIDGH
Saturation voltage of DIAG output IDIAG = 3mA0.3 VVDL
Saturation voltage of output transistor
IO 1.0A, VBopr = 6 to 16V0.5 VVCE (sat)
Output terminal sink current VO = 0V, VIN = 0V2.0 mAIO (off)
TON
TOFF
TPLH
TPHL
VB–D
PD
Tj
TOP
Tstg
Hi output
Lo output
V
V
Without heatsink, all circuits operating
V
V
W
ºC
ºC
ºC
–13 to +40
–0.3 to +7.0
Drive terminal applied voltage VD V–0.3 to VB
–0.3 to +7.0
DIAG output source current IDIAG mA 3
VB –0.4
Output current IO A1.5
2.6
–40 to +150
–40 to +100
–40 to +150
Note: * The rule of protection against reverse connection of power supply is VB = –13V, one minute (all terminals except, VB and GND, are open).
Equivalent Circuit Diagram
Standard Circuit Diagram
Diagnostic Function
External Dimensions (unit: mm)Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent protection circuits Built-in protection against reverse connection of power supply Tj = 150ºC guaranteed Surface-mount full-mold package
VIN VO
H H
L L
Truth table
SDH04
PZD1
DIAG
5.1kΩ
GND
IN
Out
VCC
VB
Load
Note 1: A pull-down resistor (11 kΩ typ.) is connected to the IN terminal.VOUT turns "L" when a high impedance is connected to the IN terminal inseries.
GND
GND
GND
GND
VB
VIN
VOUT
IO
VDIAG
Normal Shorted load Open load Overvoltage Overheat ERROR SIGNAL for CPU
TSDOVERVOLTAGE
OPENOPEN
SHORT
Is
3.0V
0.8V
DIAG DET.
DIAG DET.
GND
4,5,13
Drive
Drive
O.C.P
O.C.P
T.S.D
CONT.
11kΩ typ.
CONT.
11kΩ typ.
Pre. Reg.
IN2
DIAG2
7
6
IN12
3DIAG1
The MIC is bound by the dotted lines. 9,12,16VB
Out11,15
D114
8,10
11Out2
D2
[Abbreviations]Drive: Drive circuitCONT: ON/OFF circuitPre.Reg: Pre-regulator
DIAG.DET.: Diagnostic circuitO.C.P.: Overcurrent protectionT.S.D.: Thermal protection
High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SDH04
24
a: Part No.b: Lot No.
a
b
20.0max
2.540.89
8.0
6.3
0 to
0.15
3.0
0.25
9.8
1.0
19.56
6.8m
ax
0.75+0.15–0.05
+0.15–0.050.3
16
Pin 1 8
9
4.0m
ax
3.6
1.4
SMD-16A
*1. The base terminal (D terminal) is connected to the output transistor base. It is also connected to the control monolithic IC. Do not, therefore, apply an external voltage in operation.
*2. SDH04 have two or three terminals of the same function (VB,
Out1, Out2, GND). The terminals of the same function must be shorted at a pattern near the product.
*2
*2
*1
*2
*2
*1
±0.2
±0.25±0.15
±0.2
±0.2
±0.2
±0.2
±0.3
±0.3
±0.5
0 10 20 300
Iq (
mA
)
VB (V)
10
20
4640
VIN = 0V
VIN = 5V
0 10 20 300
20
50
40
I B (
mA
)
VB (V)
30
10
4640
–40ºC
25ºC
125ºC
Ta =
VIN = 0V
VIN = 5V
0 10 20 300
40
100
80
I B (
mA
)
VB (V)
60
20
4640
0 1 20
0.5
1.5
VC
E (s
at)
(V)
IO (A)
1.0
3
125ºC
25ºC
Ta = –40ºC
–40ºC
25ºC
Ta= 125ºCVB= 16V
VB= 6V
0 1 20
15
VO
(V
)
IO (A)
10
5
20
43
0 1 20
15
VO
(V
)
VIN (V)
10
5
3
VB = 14V IO = 1A
–40ºC25ºC
14V
6V
VB = 18V
0 1 20
15
VO
(V
)
IO (A)
10
5
20
43
14V
6V
VB = 18V
0 1 20
15
VO
(V
)
IO (A)
10
5
20
43
14V
6V
VB= 18V
Ta = 125ºC
0 2 4 6 80
1.0
0.8
0.6
0.4
0.2
I IN (
mA
)
VIN (V)
10
–50 0 50 1000
1.0
0.5
I INL
(µA
)
Ta (ºC)
150
VB = 14V
VB = 14V VIN= 0V
–40ºC25ºCTa = 125ºC
VO shortedVO open
VIN = 0V
Ta = –40ºC25ºC
125ºC
25
–50 0 50 1000
0.2
VD
L (V
)
Ta (ºC)
0.1
0.3
150
VB = 14VIDIAG = 3mA
Quiescent Circuit Current (dual circuit) Circuit Current (single circuit) Circuit Current (dual circuit)
Overcurrent Protection Characteristics (Ta=–40ºC) Overcurrent Protection Characteristics (Ta=25ºC)
Input Terminal Source Current Threshold Characteristics of Input Voltage Overcurrent Protection Characteristics (Ta=125ºC)
Saturation Voltage of Output Transistor
Saturation Voltage of DIAG Output Input Terminal Sink Current
Electrical Characteristics
High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SDH04
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
(Ta=25ºC)
Power supply voltage
Input terminal voltage
DIAG terminal voltage
Collector-emitter voltage
Power Dissipation
Input voltage
Input current
Operating power supply voltage
Quiescent circuit current
Thermal protection starting temperature
Minimum load inductance
Open load detection resistor
Output transfer time
DIAG output voltage
DIAG output transfer time
(Ta=25ºC unless otherwise specified)
Saturation voltage of output transistor
Junction temperature
Operating temperature
Storage temperature
VB
VIN
VDIAG
VBopr
VBopr = 14V, VIN = 0V
IO 1.0A, VBopr = 6 to 16V
IO 1.8A, VBopr = 6 to 16V
VBopr = 6 to 16V
VBopr = 6 to 16V
VIN = 5V
VIN = 0V
VBopr = 14V, VO = VBopr –1.5V
VBopr = 6 to 16V
VBopr = 14V, IO = 1A
VBopr = 14V, IO = 1A
VCC = 6V
VCC = 6V, IDD = 2mA
VBopr = 14V, IO = 1A
VBopr = 14V, IO = 1A
V
5 12
6.0 30
mA
0.5 V
1.0 V
VB V
0.8 V
1 mA
145
30
8 30
15 30
6
0.3
30
30
mA
125 ºC
kΩ
µs
µs
V
V
µs
µs
Iq
Output leak current VCEO = 16V
2.0
–0.3
–0.1
2 mAIO, leak
VCE (sat)
VIH
VIL
IIH
IIL
TTSD
Overcurrent protection starting current
1.9 AIS
Ropen
TON
TOFF
4.5
1
VDH
VDL
TPLH
TPHL
mHL
VCE
PD1
PD2
Tj
TOP
Tstg
Output ON
Output OFF
Output ON
Output OFF
V
V
With infinite heatsink (Tc = 25ºC)
Stand-alone without heatsink (Tc = 25ºC)
V
V
W
W
ºC
ºC
ºC
40
–0.3 to VB
6
40
Output current IO A1.8
18
1.5
–40 to +125
–40 to +100
–40 to +125Standard Circuit Diagram
Diagnostic Function
External Dimensions (unit: mm)Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply TO220 equivalent full-mold package not require insulation mica
SI-5151SPZ
DIAG
5.1kΩ
GND
1
4
3
5
2VIN
VIN VO
H H
L L
VO
VCC
VB
Load
LS-TTL orCMOS
VIN
VO
DIAG
Normal NormalOpen load OverheatShorted load
Truth table
1. GND2. VIN3. VO4. DIAG5. VB
a: Part No.b: Lot No.
(Forming No. 1123)
VIN DIAG
Open load
Normal
Mode
Shorted load
Overheat
LH
VO
LH
LH
LH
HH
HH
LH
LL
LL
LH
LL
LL
DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal.
Note: * The rule of protection against reverse connection of power supply is VB = –13V, one minute (all terminals except, VB and GND, are open).
26
High-side Power Switch ICs [With Diagnostic Function] SI-5151S
10
2.6
4.2
2.8
3.2
4
7.9
20m
ax3.
6
16.9
P1.7 • 4 = 6.8
0.94
4
0.85 0.45+0.2–0.1
+0.2–0.1
2.9
R-end
±0.5
±0.6
±0.1
±0.2
±0.2±0.2
±0.2
±0.15
±0.1
±0.2
±0.3
±0.2
+0.
2–0
.3
ab
00
10
5
10 20 30 40
--40ºC
95ºC25ºC
Iq (m
A)
VB (V) VB (V)
00
10
10 20 30 40
20
30
T --40ºC=
T 25ºC=
T 95ºC=
40
50
I B (m
A)
00
1 2 3
0.5
1.0
95ºC
V =6 to 16VB
--40ºC
25ºC
VC
E (s
at) (
V)
IO (A)
00
1 2 3
16
10
14VV =B
2
4
6
8
12
14
VO
(V)
IO (A)
00
1 2 3
16
10
8
14VV =B12
14
4
2
6
IO (A)
VO
(V)
00
1 2 3
16
10
2
14VV =B
14
12
4
6
8
VO
(V)
IO (A)
00
1 2
10
20
15
5
2.2
95ºCTa =
25ºC –40ºC
16V=BV1A=OI
VIN (V)
VO
(V)
–400
0 50
0.5
1.0
100
Ta (ºC)
I IH (m
A)
14V=BV5V=INV
–40 0 50 100
Ta (ºC)
0
0.2
0.1
14V=BV
VD
G (s
at) (
V)
–400
0 50 100
Ta (ºC)
I IL (µ
A)
14V=BV0V=INV
1
2
0 50 100
Ta (ºC)
0150
10
16
2
4
6
8
12
14
2
4
6
DIA
G (V
)
1
3
5
VO
(V
)
Vo
DIAG
14V=BV10mA=OI
a
a
a
27
Quiescent Circuit Current Circuit Current Saturation Voltage of Output Transistor
Overcurrent Protection Characteristics (Ta=25ºC) Overcurrent Protection Characteristics (Ta=100ºC)
Input Current (Output OFF) Input Current (Output ON) Threshold input voltage
Overcurrent Protection Characteristics (Ta= –40ºC)
Saturation Voltage of DIAG Output Thermal Protection Characteristics
Electrical Characteristics
High-side Power Switch ICs [With Diagnostic Function] SI-5151S
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
(Ta = 25ºC)
Power supply voltage
Input terminal voltage
DIAG terminal voltage
Collector-emitter voltage
Power Dissipation
Input voltage
Input current
Operating power supply voltage
Quiescent circuit current
Thermal protection starting temperature
Open load detection resistor
Output transfer time
DIAG output leak current
Saturation voltage of DIAG output
DIAG output transfer time
(Ta=25ºC unless otherwise specified)
Saturation voltage of output transistor
Junction temperature
Operating temperature
Storage temperature
VB
VIN
VDIAG
VBopr
VBopr = 14V, VIN = 0V
IO 1.0A, VBopr = 6 to 16V
IO 1.8A, VBopr = 6 to 16V
VBopr = 6 to 16V
VBopr = 6 to 16V
VIN = 5V
VIN = 0V
VBopr = 14V, VO = VBopr –1.5V
VBopr = 6 to 16V
VBopr 6V
VBopr = 14V, IO = 1A
VBopr = 14V, IO = 1A
VCC = 6V, VBopr = 6 to 16V
VCC = 6V, VBopr= 6 to 16V, IDO = 2mA
VBopr = 14V, IO = 1A
VBopr = 14V, IO = 1A
V
5 12
6.0 30
mA
0.5 V
1.0 V
VB V
0.8 V
1 mA
30
8 30
15 30
100
0.3
30
30
mA
150 ºC
kΩ
µs
µs
µA
V
µs
µs
Iq
Output leak current VCEO = 16V, VIN = 0V
2.0
–0.3
–0.1
2 mAIO, leak
VCE (sat)
VIH
VIL
IIH
IIL
TTSD
Overcurrent protection starting current
1.9 AIS
Ropen
TON
TOFF
IDIAG
VDL
Minimum load inductance mHL 1
TPLH
TPHL
VCE
PD1
PD2
Tj
TOP
Tstg
Output ON
Output OFF
Output ON
Output OFF
V
V
With infinite heatsink (Tc=25ºC)
Stand-alone without heatsink
V
V
W
W
ºC
ºC
ºC
40
–0.3 to VB
6
40
Output current IO A1.8
22
1.8
–40 to +150
–40 to +100
–40 to +150
Note: * The rule of protection against reverse connection of power supply is VB = –13V, one minute (all terminals except, VB and GND, are open).
Standard Circuit Diagram
Diagnostic Function
External Dimensions (unit: mm)Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply Tj = 150ºC guaranteed TO220 equivalent full-mold package not require insulation mica
SI-5152SPZ
DIAG
5.1kΩ
GND
1
4
3
5
2VIN
VIN VO
H H
L L
VO
VCC
VIN DIAG
VB
Load
LS-TTL orCMOS
VIN
VO
DIAG
Normal NormalOpen load OverheatShorted load
Truth table
Open load
Normal
Mode
Shorted load
Overheat
LH
VO
LH
LH
LH
HH
HH
LH
LL
LL
LH
LL
LL
DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal.
28
High-side Power Switch ICs [With Diagnostic Function] SI-5152S
1. GND2. VIN3. VO4. DIAG5. VB
a: Part No.b: Lot No.
(Forming No. 1123)
10
2.6
4.2
2.8
3.2
4
7.9
20m
ax3.
6
16.9
P1.7 • 4 = 6.8
0.94
4
0.85 0.45+0.2–0.1
+0.2–0.1
2.9
R-end
±0.5
±0.6
±0.1
±0.2
±0.2±0.2
±0.2
±0.15
±0.1
±0.2
±0.3
±0.2
+0.
2–0
.3
ab
00
10
5
10 20 30 40
–40ºC
95ºC25ºC
I q (
mA
)
VB (V) VB (V)
00
10
10 20 30 40
20
30
Ta = –40ºC
40
50
I B (
mA
)
00
1 2 3
0.5
1.0
95ºC
VB = 6 to 16V
–40ºC
25ºC
VC
E (s
at) (
V)
IO (A)
00
1 2 3
16
10
14VV =B
2
4
6
8
12
14
VO
(V
)
IO (A)
00
1 2 3
16
10
8
14VV =B12
14
4
2
6
IO (A)
VO
(V
)
00
1 2 3
16
10
2
14VV =B
14
12
4
6
8
VO
(V
)
IO (A)
00
1 2
10
20
15
5
2.2
95ºCTa =
25ºC –40ºC
VB = 16VIO = 1A
VIN (V)
VO
(V
)
–400
0 50
0.5
1.0
100
Ta (ºC)
I IH (
mA
)
14V=BV5V=INV
–40 0 50 100
Ta (ºC)
0
0.2
0.1
14V=BV
VD
L (V
)
–400
0 50 100
Ta (ºC)
I IL (
µA)
14V=BV0V=INV
1
2
Ta = 25ºC
Ta = 95ºC
29
Quiescent Circuit Current Circuit Current Saturation Voltage of Output Transistor
Overcurrent Protection Characteristics (Ta=25ºC) Overcurrent Protection Characteristics (Ta=100ºC)
Input Current (Output OFF) Input Current (Output ON) Threshold input voltage
Overcurrent Protection Characteristics (Ta = –40ºC)
Saturation Voltage of DIAG Output
Electrical Characteristics
High-side Power Switch ICs [With Diagnostic Function] SI-5152S
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
(Ta=25ºC)
Power supply voltage
Input terminal voltage
DIAG terminal voltage
Collector-emitter voltage
Power Dissipation
Input voltage
Input current
Operating power supply voltage
Quiescent circuit current
Thermal protection starting temperature
Open load detection resistor
Output transfer time
DIAG output voltage
DIAG output transfer time
(Ta=25ºC unless otherwise specified)
Saturation voltage of output transistor
Junction temperature
Operating temperature
Storage temperature
VB
VIN
VDIAG
VBopr
VBopr = 14V, VIN = 0V
IO 2.05A, VBopr = 6 to 16V
VBopr = 6 to 16V
VBopr = 6 to 16V
VIN = 5V
VIN = 0V
VBopr = 14V, VO = VBopr –1.5V
VBopr = 6 to 16V
VBopr 6V
VBopr = 14V, IO = 1A
VBopr = 14V, IO = 1A
VCC = 6V, VBopr = 6 to 16V
VCC = 6V, VBopr = 6 to 16V, IDO = 2mA
VBopr = 14V, IO = 1A
VBopr = 14V, IO = 1A
IC = 5mA
V
5 12
6.0 30
mA
0.47 V
VB V
0.8 V
1 mA
30
8 30
15 30
6
0.3
30
30
403428
1
mA
150
4.5
ºC
kΩ
µs
µs
V
V
µs
µs
Iq
Output leak current VCEO = 16V, VIN = 0V
2.0
–0.3
–0.1
2 mAIO, leak
VCE (sat)
VIH
VIL
IIH
IIL
TTSD
Overcurrent protection starting current
2.05 AIS
Ropen
TON
TOFF
VDH
VDL
Minimum load inductance mHL
Surge clamp voltage VVZ
TPLH
TPHL
VCE
PD1
PD2
Tj
TOP
Tstg
Output ON
Output OFF
Output ON
Output OFF
V
V
With infinite heatsink (Tc=25ºC)
Stand-alone without heatsink
Refer to "Surge clamp voltage"in Electrical Characteristics
V
V
W
W
ºC
ºC
ºC
–13 to +40
–0.3 to VB
6
VB —VZ
Output current IO A2.04
22
1.8
–40 to +150
–40 to +100
–40 to +150
Note: *1. The Zener diode for surge clamping has an energy capability of 140 mJ (single pulse).* The rule of protection against reverse connection of power supply is VB = –13V, one minute.* This driver is exclusively used for ON/OFF control.
Standard Circuit Diagram
Diagnostic Function
External Dimensions (unit: mm)Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply Tj = 150ºC guaranteed Built-in Zener diode TO220 equivalent full-mold package not require insulation mica
SI-5153S
DIAG
5.1kΩ
GND
1
4
3
5
2VIN
VIN VO
H H
L L
VO
VCC
VIN DIAG
VB
Load
LS-TTL orCMOS
VIN
VO
DIAG
Normal NormalOpen load OverheatShorted load
Truth table
Open load
Normal
Mode
Shorted load
Overheat
LH
VO
LH
LH
LH
HH
HH
LH
LL
LL
LH
LL
LL
DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal.
30
High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5153S
*1
1. GND2. VIN3. VO4. DIAG5. VB
a: Part No.b: Lot No.
(Forming No. 1123)
10
2.6
4.2
2.8
3.2
4
7.9
20m
ax3.
6
16.9
P1.7 • 4 = 6.8
0.94
4
0.85 0.45+0.2–0.1
+0.2–0.1
2.9
R-end
±0.5
±0.6
±0.1
±0.2
±0.2±0.2
±0.2
±0.15
±0.1
±0.2
±0.3
±0.2
+0.
2–0
.3
ab
0 10 20 300
Iq (
mA
)
VB (V)
5
10
40
25ºC
150ºC
Ta=–40ºC
0 10 20 300
20
50
40
I B (
mA
)
VB (V)
30
10
40
–40ºC
25ºC
150ºC
Ta =
0 1 20
2
VC
E (s
at)
(V)
IO (A)
1
3
–40ºC
25ºCVB = 6 to 16V
Ta = 125ºC
0 1 20
15
VO
(V
)
IO (A)
10
5
20
5430 1 20
15
VO
(V
)
IO (A)
10
5
20
4 53 0 1 20
15
VO
(V
)
IO (A)
10
5
20
4 53
14V
8V
VB = 18V
14V
8V
18V
14V
8V
VB = 18V
0 1 20
20
VO
(V
)
VIN (th) (V)
15
10
5
Ta = 150ºC –40ºC25ºC
–50 0 50 1000
0.8
0.6
1.0
0.4
0.2
I IH (
mA
)
Ta (ºC)
150 –50 0 50 1000
5
4
3
2
1
I IL (
µA)
Ta (ºC)
150
–50 0 50 1000
2
1
I O le
ak (
mA
)
Ta (ºC)
150 –50 0 50 1000
0.5
0.4
0.3
0.2
0.1
VD
L (V
)
Ta (ºC)
150 0 50 1000
20
15
10
5
VO
(V
)
Ta (ºC)
200150
VO
VDIAG
VB = 16VIO = 1A
VB = 14VVIN = 5V
VB = 14VVIN = 0V
VB = 14VVDIAG = 5VIO = 10mA
VB = 14VIDIAG = 2mA
VB = 14V
31
Quiescent Circuit Current Circuit Current Saturation Voltage of Output Transistor
Overcurrent Protection Characteristics (Ta =25ºC) Overcurrent Protection Characteristics (Ta=125ºC)
Input Current (Output OFF) Input Current (Output ON) Threshold Characteristics of Input Voltage
Overcurrent Protection Characteristics (Ta=–40ºC)
Saturation Voltage of DIAG Output Thermal Protection Characteristics Output Terminal Leak Current
Electrical Characteristics
High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5153S
VB =
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
(Ta=25ºC)
Power supply voltage
Input terminal voltage
DIAG terminal voltage
Collector-emitter voltage
Power Dissipation
Input voltage
Input current
Operating power supply voltage
Quiescent circuit current
Thermal protection starting temperature
Open load detection resistor
Output transfer time
DIAG output voltage
DIAG output transfer time
(Ta=25ºC unless otherwise specified)
Saturation voltage of output transistor
Junction temperature
Operating temperature
Storage temperature
VB
VIN
VDIAG
VBopr
VBopr = 14V, VIN = 0V
IO 1.0A, VBopr = 6 to 16V
VBopr = 6 to 16V
VBopr = 6 to 16V
VIN = 5V
VIN = 0V
VBopr = 14V, VO = VBopr –1.5V
VBopr = 6 to 16V
VBopr 6V
VBopr = 14V, IO = 1A
VBopr = 14V, IO = 1A
VCC = 6V, VBopr = 6 to 16V
VCC = 6V, VBopr = 6 to 16V, IDO = 2mA
VBopr = 14V, IO = 1A
VBopr = 14V, IO = 1A
IC = 5mA
V
5 12
6.0 30
mA
0.3 V
IO 2.5A, VBopr = 6 to 16V0.72 V
VB V
0.8 V
1 mA
30
8 30
15 30
6
0.3
30
30
403428
1
mA
150
4.5
ºC
kΩ
µs
µs
V
V
µs
µs
Iq
Output leak current VCEO = 16V, VIN = 0V
2.0
–0.3
–0.1
2 mAIO, leak
VCE (sat)
VIH
VIL
IIH
IIL
TTSD
Overcurrent protection starting current
2.6 AIS
Ropen
TON
TOFF
VDH
VDL
Minimum load inductance mHL
Surge clamp voltage VVZ
TPLH
TPHL
VCE
PD1
PD2
Tj
TOP
Tstg
Output ON
Output OFF
Output ON
Output OFF
V
V
With infinite heatsink (Tc=25ºC)
Stand-alone without heatsink
Refer to "Surge clamp voltage" in Electrical Characteristics
V
V
W
W
ºC
ºC
ºC
–13 to +40
–0.3 to VB
6
VB –VZ
Output current IO A2.5
22
1.8
–40 to +150
–40 to +100
–40 to +150
Note: *1. The Zener diode for surge clamping has an energy capability of 200 mJ (single pulse).* The rule of protection against reverse connection of power supply is VB = –13V, one minute.* This driver is exclusively used for ON/OFF control.
Standard Circuit Diagram
Diagnostic Function
External Dimensions (unit: mm)Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply Tj = 150ºC guaranteed Built-in Zener diode TO220 equivalent full-mold package not require insulation mica
VIN DIAG
VIN
VO
DIAG
Normal NormalOpen load OverheatShorted load
Open load
Normal
Mode
Shorted load
Overheat
LH
VO
LH
LH
LH
HH
HH
LH
LL
LL
LH
LL
LL
DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal.
SI-5154S
DIAG
5.1kΩ
GND
1
4
3
5
2VIN
VIN VO
H H
L L
VO
VCC
VB
Load
LS-TTL orCMOS
Truth table
32
High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5154S
*1
1. GND2. VIN3. VO4. DIAG5. VB
a: Part No.b: Lot No.
(Forming No. 1123)
10
2.6
4.2
2.8
3.2
4
7.9
20m
ax3.
6
16.9
P1.7 • 4 = 6.8
0.94
4
0.85 0.45+0.2–0.1
+0.2–0.1
2.9
R-end
±0.5
±0.6
±0.1
±0.2
±0.2±0.2
±0.2
±0.15
±0.1
±0.2
±0.3
±0.2
+0.
2–0
.3
ab
0 10 20 300
Iq (m
A)
VB (V)
5
10
40
25ºC150ºC
Ta= –40ºC
0 10 20 300
20
50
40
I B (m
A)
VB (V)
30
10
40
–40ºC
25ºC
150ºC
Ta =
0 1 20
2
VC
E (s
at) (
V)
IO (A)
1
3
25ºCVB = 6 to 16V
Ta = 125ºC
0 1 20
16
VO (
V)
IO (A)
12
8
4
20
0
16
12
8
4
20
0
16
12
8
4
20
5430 1 2
VO (
V)
IO (A)
543 0 1 2
VO (
V)
IO (A)
543
14V
8V
14V
8V
14V
8V
6V
0 1 20
20
VO (
V)
VIN (th) (V)
15
10
5
Ta = 125ºC –40ºC25ºC
–50 0 50 1000
0.8
0.6
1.0
0.4
0.2
I IH (m
A)
Ta (ºC)
150 –50 0 50 1000
5
4
3
2
1
I IL (µ
A)
Ta (ºC)
150
–50 0 50 1000
2
1
I O le
ak (m
A)
Ta (ºC)
150 –50 0 50 1000
0.5
0.4
0.3
0.2
0.1
VD
L (V
)
Ta (ºC)
150
–40ºC
VB = 18V
VB = 18V
6V 6V
VB = 18V
VB = 14VVIN = 0V
VB = 14VVIN = 5V
VB = 16VIO = 1A
VB = 14V VB = 14VIDIAG = 2mA
33
0 50 1000
20
15
10
5
VO (
V)
Ta (ºC)
200150
VO
VDIAG
VB = 14VVDIAG = 5VIO = 10mA
Quiescent Circuit Current Circuit Current Saturation Voltage of Output Transistor
Overcurrent Protection Characteristics (Ta=25ºC) Overcurrent Protection Characteristics (Ta=125ºC)
Input Current (Output OFF) Input Current (Output ON) Threshold input voltage
Overcurrent Protection Characteristics (Ta= –40ºC)
Saturation Voltage of DIAG Output Thermal Protection Characteristics Output Terminal Leak Current
Electrical Characteristics
High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5154S
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
(Ta=25ºC)
Power supply voltage
Input terminal voltage
DIAG terminal voltage
Collector-emitter voltage
Power dissipation
Input voltage
Input current
Operating power supply voltage
Quiescent circuit current
Thermal protection starting temperature
Open load detection resistor
Output transfer time
DIAG output voltage
DIAG output transfer time
(Ta=25ºC unless otherwise specified)
Saturation voltage of output transistor
Junction temperature
Operating temperature
Storage temperature
VB
VIN
VDIAG
VBopr
VBopr = 14V, VIN = 0V
IO 1.0A, VBopr = 6 to 16V
IO 2.5A, VBopr = 6 to 16V
VBopr = 6 to 16V
VBopr = 6 to 16V
VIN = 5V
VIN = 0V
VBopr = 14V, VO = VBopr –1.5V
VBopr = 6 to 16V
VBopr 6V
VBopr = 14V, IO = 1A
VBopr = 14V, IO = 1A
VCC = 6V, VBopr = 6 to 16V
VCC = 6V, VBopr = 6 to 16V, IDO = 2mA
VBopr = 14V, IO = 1A
VBopr = 14V, IO = 1A
V
5 12
6.0 30
mA
0.3 V
0.72 V
VB V
0.8 V
1 mA
30
8 30
15 30
6
0.3
30
30
mA
4.5
1
ºC
kΩ
µs
µs
V
V
µs
µs
Iq
Output leak current VCEO = 16V, VIN = 0V
2.0
–0.3
–0.1
2 mAIO, leak
VCE (sat)
VIH
VIL
IIH
IIL
TTSD
Overcurrent protection starting current
2.6
150
AIS
Ropen
TON
TOFF
VDH
VDL
Minimum load inductance mHL
TPLH
TPHL
VCE
PD1
PD2
Tj
TOP
Tstg
Output ON
Output OFF
Output ON
Output OFF
V
V
With infinite heatsink (Tc=25ºC)
Stand-alone without heatsink
V
V
W
W
ºC
ºC
ºC
–13 to +40
–0.3 to VB
6
40
Output current IO A2.5
22
1.8
–40 to +150
–40 to +100
–40 to +150
Note: * The rule of protection against reverse connection of power supply is VB= –13V, one minute (all terminals except, VB and GND, are open).
Standard Circuit Diagram
Diagnostic Function
External Dimensions (unit: mm)Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply Tj = 150ºC guaranteed TO220 equivalent full-mold package not require insulation mica
VIN DIAG
VIN
VO
DIAG
Normal NormalOpen load OverheatShorted load
Open load
Normal
Mode
Shorted load
Overheat
LH
VO
LH
LH
LH
HH
HH
LH
LL
LL
LH
LL
LL
DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal.
SI-5155SPZ
DIAG
5.1kΩ
GND
1
4
3
5
2VIN
VIN VO
H H
L L
VO
VCC
VB
Load
LS-TTL orCMOS
Truth table
High-side Power Switch ICs [With Diagnostic Function] SI-5155S
34
1. GND2. VIN3. VO4. DIAG5. VB
a: Part No.b: Lot No.
(Forming No. 1123)
10
2.6
4.2
2.8
3.2
4
7.9
20m
ax3.
6
16.9
P1.7 • 4 = 6.8
0.94
4
0.85 0.45+0.2–0.1
+0.2–0.1
2.9
R-end
±0.5
±0.6
±0.1
±0.2
±0.2±0.2
±0.2
±0.15
±0.1
±0.2
±0.3
±0.2
+0.
2–0
.3
ab
0 10 20 300
Iq (
mA
)
VB (V)
5
10
40
25ºC150ºC
Ta= –40ºC
0 10 20 300
20
50
40
I B (
mA
)
VB (V)
30
10
40
–40ºC
25ºC
150ºC
Ta =
0 1 20
2
VC
E (s
at)
(V)
IO (A)
1
3
25ºCVB = 6 to 16V
Ta = 125ºC
0 1 20
16
VO
(V
)
IO (A)
12
8
4
20
0
16
12
8
4
20
0
16
12
8
4
20
5430 1 2
VO
(V
)
IO (A)
543 0 1 2
VO
(V
)
IO (A)
543
14V
8V
14V
8V
14V
8V
6V
0 1 20
20
VO
(V
)
VIN (th) (V)
15
10
5
Ta = 125ºC –40ºC25ºC
–50 0 50 1000
0.8
0.6
1.0
0.4
0.2
I IH (
mA
)
Ta (ºC)
150 –50 0 50 1000
5
4
3
2
1
I IL (
µA)
Ta (ºC)
150
–50 0 50 1000
2
1
I O le
ak (
mA
)
Ta (ºC)
150 –50 0 50 1000
0.5
0.4
0.3
0.2
0.1
VD
L (V
)
Ta (ºC)
150
–40ºC
VB = 18V
VB = 18V
6V 6V
VB = 18V
VB = 14VVIN = 0V
VB = 14VVIN = 5V
VB = 16VIO = 1A
VB = 14V VB = 14VIDIAG = 2mA
35
0 50 1000
20
15
10
5
VO
(V
)
Ta (ºC)
200150
VO
VDIAG
VB = 14VVDIAG = 5VIO = 10mA
Quiescent Circuit Current Circuit Current Saturation Voltage of Output Transistor
Overcurrent Protection Characteristics (Ta=25ºC) Overcurrent Protection Characteristics (Ta=125ºC)
Input Current (Output OFF) Input Current (Output ON) Threshold input voltage
Overcurrent Protection Characteristics (Ta= –40ºC)
Saturation Voltage of DIAG Output Thermal Protection Characteristics Output Terminal Leak Current
Electrical Characteristics
High-side Power Switch ICs [With Diagnostic Function] SI-5155S
Parameter Symbol Unit ConditionsRatings
Electrical Characteristics
Absolute Maximum Ratings
Parameter Symbolmin typ max
Unit ConditionsRatings
(Ta=25ºC)
Power supply voltage
Input terminal voltage
DIAG output applied voltage
Voltage across power supply and output terminal
Power Dissipation
Input voltage
Operating power supply voltage
Quiescent circuit current (per circuit)
Thermal protection starting temperature
Open load detection resistor
Output transfer time
DIAG output transfer time
(VBopr=14V, Tj= –40 to +150ºC unless otherwise specified)
Junction temperature
Operating temperature
Storage temperature
VB
VIN
VDIAG
VBopr
Lo output
Tj = 25ºC
VO = VBopr –1.5V
VBopr 6V
IO = 1A
IO = 1A
IO = 1A
IO = 1A
V
0.8
19.3
1.0
2.5
34
34
1.6
6.0 16
mA
1.5
V
30
100
30
100
60
V
ºC
kΩ
µs
µs
µs
µs
Iq
Circuit current (per circuit) mAIB
0.8
3.7
Threshold input voltage 3.0 VVINth
VIN
VIN
TTSD
Overcurrent protection starting current
1.6
5.5
Minimum load inductance mHLo 1.0
Maximum ON duty %D(ON) 0
AIS
Ropen
Leak current of DIAG output VCC = 7V–100 µAIDGH
Saturation voltage of DIAG output IDGH = –2mA, VBopr = 6 to 16V0.4 VVDL
Saturation voltage of output transistor
IO 1.2A, VBopr = 6 to 16V0.2 VVCE (sat)
IO 1.5A, VBopr = 6 to 16VVVCE (sat)
Output terminal sink current Tj = 25ºC, VCEO = 14V 5 mAIO (off)
Surge clamp voltageTj = 25ºC, IC = 10mA39 V
VB–OIC = 5mA40 V
TON
TOFF
TPLH
TPHL
VB–O
PD
Tj
TOP
Tstg
Hi output
Lo output
Input currentVIN = 5V
VIN = 0V100
29
28
–1.0 mA
µA
IIN
IIN
Hi output
Lo output
V
V
Stand-alone without heatsink,all circuits operating
C = 200pF, R = 0Ω
V
V
W
ºC
ºC
ºC
–13 to +40
–0.3 to +7.0
Drive terminal applied voltage VD V–0.3 to VB
–0.3 to +7.0
DIAG output source current IDIAG mA –3
VB–34
Voltage across power supply and drive terminal
VB–D V–0.4
Output current IO A1.5
Output reverse current IO A–1.8
Electrostatic resistance ES/A V±250
4.8
–40 to +150
–40 to +115
–50 to +150
Note:* The Zener diode has an energy capability of 200 mJ (single pulse).* A start failure may occur if a short OFF signal of 10 ms or below is input in the VIN terminal.
Equivalent Circuit Diagram
Standard Circuit Diagram
Diagnostic Function
External Dimensions (unit: mm)Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use (VCE (sat) 0.2V) Allows direct driving using LS-TTL and C-MOS logic levels Built-in Zener diode in transistor eliminates the need of (or simplifies) external surge absorption circuit Built-in independent overcurrent and thermal protection circuit in each circuit Built-in protection against reverse connection of power supply Tj = 150ºC guaranteed
VIN
VO
VDIAG
Normal NormalOpen load OverheatShorted load
VIN
VB
OUT
D
FLTGND
MIC
a
c
f
b
d
g
e
SLA2501M
GND1 OUT1 OUT2 OUT3
FLT1
IN1
IN2
VB
VB
VCC
D1 D2 D3
IN3
FLT2
FLT3
GND2
5
7
12
6 11 2 10 15
1 3 9 14
4
8
13
a: Part No.b: Lot No.
31Ellipse 3.2 • 3.8
14 • P2.03 = (28.42)
24.44.8
1.7
2.45
0.65
3.2
12.9 16
9.9
6.4
0.551.15+0.2–0.1
+0.2–0.1
+0.2–0.1
31.3
1 2 3 15
ab
High-side Power Switch ICs [With Diagnostic Function, 3-circuits] SLA2501M
36
a: Pre-regulatorb: Overvoltage protection circuitc: Control circuitd: Driver circuit
e: Overcurrent protection circuitf: Diagnostic circuitg: Thermal protection circuit
±0.1
±0.2
±0.2
±0.15 ±0.2
±0.2
±0.2
±0.2
±0.5
±0.2
±0.1
±0.2
±0.15
0 10 20 300
2
4
Iq (m
A)
VB (V)
3
1
5
40
=T –40ºCa=T 25ºCa
=T 125ºCa
=V 0VIN
0 10 20 300
I B (m
A)
VB (V)
=T –40ºCa
40
=T 25ºCa
=T 125ºCa
10
20
30
40=V 5VIN
0 1 2 30
IO (A)
3.5
1.0
0.5
VC
E (s
at) (
V)
=T –40ºCa
=T 25ºCa
=T 125ºCa
=VB 6 to 16V=T 150ºCa
=VIN 5V
0 1 20
IO (A)
20
10
3 4 5
=VB 14V
0 1 20
IO (A)
20
10
3 4
=VB 14V
VO
(V)
VO
(V)
0 1 20
VO
(V)
20
10
3 4
=VB 14V
IO (A)
0 1 20
VO
(V)
VIN (V)
=T 125ºCa
20
10
3 4
25ºC –40ºC
=VB 16V =I 1AOUT
0--50
1.0
I IH (m
A)
Ta (ºC)
=VB 14V
0.5
050 100 125
0V=VIN
0–50
20
I IL (µ
A)
Ta (ºC)
=VB 14V
10
050 100 125
0V=V IN
0–50
0.3
Ta (ºC)
=VB 14V
050 100 125
5V=VIN
0.2
0.1
VD
L (V
)
3 (mA)=IFLT
Ta (ºC)
=VB 16V
0100
10
FLT
V
(V
)
10mA=IO
VO
(V)
0 60
5
1020
160 180
O V
FLTV
0
IF (A)
0
1.4
1.0
VF (V
)
1 2 3 4
aT = 125ºC
--aT = 40ºC
aT = 25ºC
1.2
0.2
0.4
0.6
0.8
37
Quiescent Circuit Current (single circuit) Circuit Current (single circuit) Saturation Voltage of Output Transistor
Overcurrent Protection Characteristics (Ta=25ºC) Overcurrent Protection Characteristics (Ta=125ºC)
Input Current (Output OFF) Input Current (Output ON) Threshold Input Voltage
Overcurrent Protection Characteristics (Ta= –40ºC)
Output Reverse Current Thermal Protection Saturation Voltage of DIAG Output
Electrical Characteristics
High-side Power Switch ICs [With Diagnostic Function, 3-circuits] SLA2501M
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
(Ta=25ºC)
Power supply voltage
Input terminal voltage
DIAG output applied voltage
Power Dissipation
Input current
Operating power supply voltage
Quiescent circuit current (per circuit)
Open load detection resistor
Output transfer time
DIAG output transfer time
(VBopr =14V, Ta=25ºC unless otherwise specified)
Junction temperature
Operating temperature
Storage temperature
VB
VIN
VDIAG
VBopr
VIN = 0V
VIN = 5V
VIN = 0V
VO = VBopr –1.9V
IO = 1A
IO = 1A
IO = 1A
IO = 1A
V
5 12
6.0
0.8
0
16
mA
1.0
100
mA
30
8 30
15
10
15
30
30
30
µA
kΩ
µs
µs
µs
µs
Iq
Threshold input voltage 3.0 VVINth
IIN
IIN
Overcurrent protection starting current
1.6 AIS
Ropen
Leak current of DIAG output VDIAG = 5V100 µAIDGH
Saturation voltage of DIAG output IDIAG = 3mA0.3 VVDL
Saturation voltage of output transistor
IO 1.0A, VBopr = 6 to 16V0.5 VVCE (sat)
Output terminal sink current VO = 0V, VIN = 0V2.0 mAIO (off)
TON
TOFF
TPLH
TPHL
PD
Tj
TOP
Tstg
Hi output
Lo output
V
V
Stand-alone operation without heatsink; all circuits operating
V
W
ºC
ºC
ºC
–13 to +40
–0.3 to +7.0
–0.3 to +7.0
DIAG output source current IDIAG mA3
Output current IO A1.2
4.8
–40 to +150
–40 to +100
–50 to +150
Note: * The rule of protection against reverse connection of power supply is VB= –13V, one minute (all terminals except VB and GND should be open).
Equivalent Circuit Diagram
Standard Circuit Diagram
Diagnostic Function
External Dimensions (unit: mm)Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use (VCE (sat) 0.5V) Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent protection circuits Built-in protection against reverse connection of power supply Tj = 150ºC guaranteed
a: Part No.b: Lot No.
31Ellipse 3.2 • 3.8
14 • P2.03 = (28.42)
24.44.8
1.7
2.45
0.65
3.2
12.9 16
9.9
6.4
0.551.15+0.2–0.1
+0.2–0.1
+0.2–0.1
31.3
1 2 3 15
a
b
VIN VO
H H
L L
Truth table
SLA2502M
PZD1
DIAG
5.1kΩ
GND
IN
Out
VCC
VB
LoadGND
GND
GND
GND
VB
VIN
VOUT
IO
VDIAG
Normal Shorted load Open load Overvoltage Overheat
ERROR SIGNAL for CPU
TSDOVERVOLTAGE
OPENOPEN
SHORT
Is
3.0V
0.8V
NI2
NI1
VB
Out1
Out2
Pre. Reg.
Drive
Drive
T.S.D
2
3
8
1
7
6
5
4
DIAG1
DIAG2
GND1
DIAG DET
DIAG DET
The MIC is bound by the dotted lines.
11kΩ typ.CONT.
11kΩ typ.CONT.
O.C.P
O.C.P
NI4
NI3
Out3
Out4
Pre. Reg.
Drive
Drive
T.S.D
10
11
9
15
14
13
12
DIAG3
DIAG4
GND4
DIAG DET
DIAG DET
11kΩ typ.CONT.
11kΩ typ.CONT.
O.C.P
O.C.P
SLA2502M
[Abbreviations]Drive: Drive circuitCONT: ON/OFF circuitPre.Reg: Pre-regulator
DIAG.DET.: Diagnostic circuitO.C.P.: Overcurrent protectionT.S.D.: Thermal protection
High-side Power Switch ICs [With Diagnostic Function, 4-circuits] SLA2502M
38
Note 1: A pull-down resistor (11kΩ typ.) is connected to the IN terminal. VOUT turns "L" when a high impedance is connected to the IN terminal in series.
Note 2: Grounds GND1 and GND2 are not wired internally. They must be shorted at a pattern near the product.
±0.2
±0.2±0.2±0
.2
±0.2
±0.5
±0.2±0.2
±0.2
±0.1
±0.1
±0.15
±0.15
0 10 20 300
20
50 –40ºC
25ºC
125ºC
VIN = 0V
VIN = 0V
40
I B (
mA
)
VB (V)
30
10
60
4640
0 1 20
15
VO
(V
)
VIN (V)
10
5
20
3
–50 0 50 1000
0.2
VD
L (V
)
Ta (ºC)
0.1
0.3
150
0–50 100500
2
I IL (
µA)
Ta (ºC)
1
3
150
0 10 20 300
150
I B (
mA
)
VB (V)
100
50
200
4640 0 1 20
VC
E (s
at)
(V)
IO (A)
0.5
VB
Ta =
(VB = 14V)
Ta =
1.0
3
Ta =
25ºC
125ºC
–40ºCTa =
125ºC25ºC
–40ºC
VB = 14VVIN = 0V
210 5430
0.4
0.3
0.2
0.1
I IH (
mA
)
VIN (V)
0.5
6
VB =
0 1 20
15
VO
(V
)
IO (A)
10
5
20
43
18V
14V
6V
125ºC –40ºC
VB = 14V
–40ºCTa =
125ºC
VB = 14VIDIAG = 3mA
0 10 20 300
Iq (
mA
)
VB (V)
10
20
4640
VO shortedVO open
VIN = 0V
Ta = –40V25V
125V
39
Circuit Current (single circuit) Circuit Current (4 circuits) Saturation Voltage of Output Transistor
Input Current (Output Hi)
Input Current (Output OFF) Threshold Input Voltage Overcurrent Protection Characteristics (Ta=–40ºC)
Quiescent Circuit Current (dual circuit) Saturation Voltage of DIAG Output
25ºC
25ºC
Electrical Characteristics
0 50 150100
Thermal Protection Characteristics
0
VO
1 (V
)
Ta (ºC)
10
5
15
200 5 10 15
Open Load Detection Resistor
0
RO
PE
N (k
Ω)
VB (V)
10
5
15
205 10 2015
Output Terminal Leak Current (VO = 0V)
0.5
IOLE
AK (m
A)
VB (V)
1.1
1.0
0.9
0.8
0.7
0.6
25
TSDVB = 14VRL = 1.3kΩ
Ta =
Ta = –40ºC
25ºC
125ºC 125ºC
25ºC
–40ºC
High-side Power Switch ICs [With Diagnostic Function, 4-circuits] SLA2502M
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
(Ta=25ºC)
Power supply voltage
Input terminal voltage
Input terminal current
DG terminal voltage
Input thresholdvoltage
Inpup current
Operating power supply voltage
Quiescent circuit current
Thermal shutdown operating temperature
Load open detection threshold voltage
DG leak current
Low level DG output voltage
Output transfer time
DG output transfer time
(VB=14V, Ta=25ºC unless otherwise specified)
Output ON resistance
Channel temperature
Operating temperature
Storage temperature
VB
VIN
IIN
VB (opr)
VIN=0V, VOUT=0V
IO=1A
IO=1A, Ta=80ºC
Ta= –40 to +105ºC
Ta= –40 to +105ºC
VIN=5V
VIN=0V
VOUT=VO–1.5V
VOUT=0V
RL=14Ω, VO= –5V
RL=14Ω, VO •10%
VDG=5.5V
IDG=1.6mA
V
50
2.0
1.8
70
1
5.5 35
mA
200 mΩ
300 mΩ
3.0 V
V
200
12
µA
165
5
3
4.5
70
3
140
35
0.15
70
45
90
20
0.5
140
120
µA
155
1.5
ºC
A
V
µs
µs
µA
V
µs
Iq
Output leak current VOUT=0V
1.4
1.0
100 µAIO, leak
RDS (ON)
VIHth
VILth
IIH
IIL
TTSD
Overcurrent protection starting current
Internal current limit
1.9 AIS
ILim
Vopen
TON
TOFF
VDGL
IDG
TPLH
TPHL µs
VDG
VDS
IO
PD
IF
Tch
TOP
Tstg
Output ON
Output OFF
Output ON
Output OFF
V
V
Ta=25ºC
mA
V
V
A
W
A
ºC
ºC
ºC
35
–0.3 to 7
5
–0.3 to 7
DG terminal current
Drain to source voltage
Output current
Power dissipation
Source to drain Di forward current
IDG mA 5
VB–45
1.8
2
0.8
150
–40 to +105
–40 to +150
Parameter UnitRatings
Recommended Operating Conditions (for one channel) Wave Form
Power supply voltage
VIH
VIL
IO
RIN
RDG
5.5
4
–0.3
10
10
16
5.5
0.9
1
20
20
V
V
V
A
kΩ
kΩ
Block Diagram (for one channel)
Standard Connection Diagram
Timing Chart
External Dimensions (unit: mm)Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals DMOS 2ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent and thermal protection circuits
VIN DG
Open load
Normal
Mode
Shorted load
Overheat
HL
VO
HL
HL
HL
HH
HH
HL
LL
LL
(Limiting)
HL
LL
LL
Note: *1. Transient time is showed Wave Form below.
40
High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SPF5003
*1
*1
12.2±0.2
1.0
2.5±0
.27.
5±0
.2
10.5±0.2
1.27±0.25
16
1 8
9
+0.1–0.05
0.4+0.15–0.05
0.25+0.15–0.05
2.0
+0.
2–0
.8
Fin thickness
min max
IN
DG
VB
GND OUT
ThermalProtect
InputLogic
LavelShifting
DGLogic
Open/ShortSense
ChargePump
CurrentLimit
Clamp
Chopper
Bias
Vin 1(7V max)
Vin 2(7V max)
GND
DG2
DG15V
OUT1
OUT2
5V(10,11)
9
5
RINCPU
RIN
124
6
14
15,16
7,8
13
1
SPF5003VB
(2, 3)
VB
VIN ON VIN OFF VO open OCP TSDNormal Normal
Over-heat
Normal NormalNormal Shorted loadOpen load
High inpidance
Internal current limit
TSDON
TSDOFF
VIN
VOUT
IOUT
DG
* RIN and RDG are needed to protect CPU and SPF5003 in case of reverse connection of VB terminal.* Make VB of 1Pin and 9Pin short from the fin to be plated by solder.
RD
G
RD
G
TON
VIN
VOUT
VDG
VDG • 90%
VDG • 10%
VOUT • 10%
VOUT–5V
TOFF
TPLH TPHL
Output transfer time
DG output transfer time
Load
Load
41
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
(Ta=25ºC)
Power supply voltage
Input terminal voltage
Input terminal current
DG terminal voltage
Input voltage
Inpup current
Operating power supply voltage
Quiescent circuit current
Thermal shutdown operating temperature
Load open detection threshold voltage
DG leak current
Low level DG output voltage
Output transfer time
DG output transfer time
(VB=14V, Ta=25ºC unless otherwise specified)
Output ON resistance
Channel temperature
Operating temperature
Storage temperature
VB
VIN
IIN
VB (opr)
VIN=0V, VOUT=0V
IO=2A
IO=1A, Ta=80ºC
VIN=5V
VOUT=VO–1.5V
VOUT=0V
VDG=5.5V
IDG=1.6mA
V
50
2.0
1.8
70
1
5.5 35
mA
150 mΩ
250 mΩ
3.0 V
V
µA
165
10
165
3
60
0.15
70
45
20
155 ºC
A
V
µs
µs
µA
V
µs
Iq
Output leak current VOUT=0V
Ta= –40 to +105ºC
Ta= –40 to +105ºC1.0
µAIO, leak
RDS (ON)
VIH
VIL
IIH
TTSD
Overcurrent protection starting current
Internal current limit
2.6 AIS
ILim
Vopen
TON
TOFF
VDGL
IDG
TPLH
TPHL µs
VDG
VDS
IO
PD
IF
Tch
TOP
Tstg
Output ON
Output OFF
Output ON
V
V
Ta=25ºC
mA
V
V
A
W
A
ºC
ºC
ºC
35
–0.3 to 7
5
–0.3 to 7
DG terminal current
Drain to source voltage
Output current
Power dissipation
Source to drain Di forward current
IDG mA 5
VB–45
2.5
2.7
0.8
150
–40 to +105
–40 to +150
Parameter UnitRatings
Recommended Operating Conditions (for one channel)
Power supply voltage
VIH
VIL
IO
RIN
RDG
5.5
4
–0.3
10
10
16
5.5
0.9
1.15
20
20
V
V
V
A
kΩ
kΩ
External Dimensions (unit: mm)Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals DMOS 2ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent and thermal protection circuits
42
High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SPF5004
min max
Block Diagram (for one channel)
Standard Connection Diagram
Timing Chart
IN
DG
VB
GND OUT
ThermalProtect
InputLogic
LavelShifting
DGLogic
Open/ShortSense
ChargePump
CurrentLimit
Clamp
Chopper
Bias
Vin 1(7V max)
Vin 2(7V max) GND
DG2
DG15V
OUT1
OUT2
5V
(16,17,18)
13
23
CPU
921
24
12
14,15
2,3
11
1
SPF5004VB
(4,5,6)
1.0
10.5
±0.3
+0.1–0.05
0.25+0.15–0.05
2.0+
0.2
–0.8
Fin thickness
17.28±0.2
2.5±0
.2
7.5±0
.2
15.58±0.2
1.27±0.25
24
1 12
13
0.4+0.15–0.05
a
b
a: Part No.b: Lot No.
* Make VB of 4Pin, 5Pin, 6Pin, 16Pin, 17Pin and 18Pin short from the fin to be plated by solder.
RIN
RIN
RD
G
RD
G
Load
Load
VB
VIN ON VIN OFF VO open OCP TSDNormal Normal
Over-heat
Normal NormalNormal Shorted loadOpen load
High inpidance
Internal current limit
TSDON
TSDOFF
VIN
VOUT
IOUT
DG
VIN DG
Open load
Normal
Mode
Shorted load
Overheat
HL
VO
HL
HL
HL
HH
HH
HL
LL
LL
(Limiting)
HL
LL
LL
43
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
(Ta=25ºC)
Power supply voltage
Input terminal voltage
Input terminal current
DG terminal voltage
Input thresholdvoltage
Inpup current
Operating power supply voltage
Quiescent circuit current
Thermal shutdown operating temperature
Load open detection threshold voltage
DG leak current
Low level DG output voltage
Output transfer time
DG output transfer time
(VB=14V, Ta=25ºC unless otherwise specified)
Output ON resistance
Channel temperature
Operating temperature
Storage temperature
VB
VIN
IIN
VB (opr)
VIN=0V, VOUT=0V
IO=1A
IO=1A, Ta=80ºC
Ta= –40 to +105ºC
Ta= –40 to +105ºC
VIN=5V
VIN=0V
VOUT=VO–1.5V
VOUT=0V
RL=14Ω, VOUT=VB–5V
RL=14Ω, VB •10%
VDG=5.5V
IDG=1.6mA
V
50
2.0
1.8
70
1
5.5 35
mA
200 mΩ
350 mΩ
3.0 V
V
200
12
µA
165
5
3
4.5
70
3
140
35
0.15
70
45
90
20
0.5
140
120
µA
155
1.5
ºC
A
V
µs
µs
µA
V
µs
Iq
Output leak current VOUT=0V
1.4
1.0
100 µAIO, leak
RDS (ON)
VIHth
VILth
IIH
IIL
TTSD
Overcurrent protection starting current
Internal current limit
1.9 AIS
ILim
Vopen
TON
TOFF
VDGL
IDG
TPLH
TPHL µs
VDG
VDS
IO
PD
IF
Tch
TOP
Tstg
Output ON
Output OFF
Output ON
Output OFF
V
V
Ta=25ºC, all circuit operating
mA
V
V
A
W
A
ºC
ºC
ºC
35
–0.3 to 7
5
–0.3 to 7
DG terminal current
Drain to source voltage
Output current
Power dissipation
Source to drain Di forward current
IDG mA 5
VB–45
1.8
2.7
0.8
150
–40 to +105
–40 to +150
Parameter UnitRatings
Recommended Operating Conditions (for one channel)
Power supply voltage
VIH
VIL
IO
RIN
RDG
5.5
4
–0.3
10
10
16
5.5
0.9
1
20
20
V
V
V
A
kΩ
kΩ
External Dimensions (unit: mm)Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals DMOS 3ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent and thermal protection circuits
44
High-side Power Switch ICs [With Diagnostic Function, Surface-mount 3-circuits] SPF5007
min max
Block Diagram (for one channel)
Standard Connection Diagram
Timing Chart
IN
DG
VB
GND OUT
ThermalProtect
InputLogic
LavelShifting
DGLogic
Open/ShortSense
ChargePump
CurrentLimit
Clamp
Chopper
Bias
IN2 IN3IN1GND12
13 VB
1
7 17 183 8
5,6
10,11
20,21
45V
9
19
GND2 GND3
CPU
SPF5007
RDG
DG1
OUT1
OUT2
OUT3
DG2
DG3
RDG
RDG
RIN
RIN
RIN
* RIN and RDG are needed to protect CPU and SPF5007 in case of reverse connection of VB terminal.* Make VB of 1Pin and 13Pin short from the fin to be plated by solder.
1.0
10.5
±0.3
+0.1–0.05
0.25+0.15–0.05
2.0+
0.2
–0.8
Fin thickness
17.28±0.2
2.5±0
.2
7.5±0
.2
15.58±0.2
1.27±0.25
24
1 12
13
0.4+0.15–0.05
a
b
a: Part No.b: Lot No.
Load
Load
Load
VB
VIN ON VIN OFF VO open OCP TSDNormal Normal
Over-heat
Normal NormalNormal Shorted loadOpen load
High inpidance
Internal current limit
TSDON
TSDOFF
VIN
VOUT
IOUT
DG
VIN DG
Open load
Normal
Mode
Shorted load
Overheat
HL
VO
HL
HL
HL
HH
HH
HL
LL
LL
(Limiting)
HL
LL
LL
45
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
(Ta=25ºC)
Power supply voltage 1
Power supply voltage 2
Power supply voltage 3
Output terminal voltage
Input terminal voltage
Output current
Power dissipation
Storage temperature
Channel temperature
Min. operating power supply voltage
Operating power supply voltage 1
Operating power supply voltage 2
Quiescent circuit current 1
Quiescent circuit current 2
PWM terminal input voltage
PWM terminal input current
Hold terminal input voltage
Hold terminal input current
Output ON resistance
Current sensing resistance
Overcurrent protection starting current
Thermal shutdown operating temperature
Operation circuit for current monitor output
Current monitor output voltage
Current monitor output current
Output transfer time
Output rise time
Output fall time
Current monitor output hold time
Current monitor output delay time
Hold time after inputting hold
S/H settling time
VB
Vcc
VB
Vsense+
Vsense–
VOUT
VPWM
VHold
IOUT
PD
Tstg
Tch
VB min
VB
VCC
Iqvb
Iqvcc
VPWMH
VPWML
IPWMH
VHoldH
VHoldL
IHoldH
RDSon
Rsense
Is
Ttsd
Io
VSH
ISH
ton
toff
tr
tf
tsh
tshd
tshh
tstt
Minimum operation of OUT terminal.
Vcc = 5V, VPWM = 0V, One circuit equivalent
Vcc = 5V, VPWM = 0V
Vcc = 5V
Vcc = 5V, VPWM = 5V, Active H
Vcc = 5V
Vcc = 5V, VPWM = 5V, Active H
IOUT = 1A
IOUT = 1A, Ta = 125°C
IOUT = 1A
IOUT = 1A, Ta = 125°C
Io = 0A, Vcc = 5V
Io = 0.2A, Vcc = 5V
Io = 0.5A, Vcc = 5V, Ta = –40 to 140°C
Io = 1.2A, Vcc = 5V, Ta = –40 to 140°C
Io = 1A, Vcc = 5V, VSH = 0V
Io = 1A, Vcc = 5V, VSH = 5V
Io = 0.5A, Vcc = 5V
V
V
V
mA
mA
V
µA
V
µA
Ω
Ω
Ω
Ω
A
°C
A
V
V
V
V
mA
mA
µs
µs
µs
µs
µs
µs
µs
µs
µs
6
10
3.5
3.5
3.0
150
0.2
0.488
1.219
2.925
–6
500
14
5.0
70
70
0.500
1.250
3.000
16
7.2
0.2
1.5
110
1.5
110
0.14
0.21
0.21
0.25
1.2
0.2
0.512
1.281
3.075
5
15
15
100
50
650
1
2
70
80
V
V
V
V
V
V
A
W
°C
°C
VB terminal, t = 1 min
Depends on surface-mount board pattern
0 to 32
–0.5 to 7.0
0 to 40
–0.8 to 6
Vsense+±Io • Rsense
–2 to 32
–0.5 to 7.0
2.0
2.4 to 5.0
–40 to +150
150
External Dimensions (unit: mm)Features Internal current sense resistor High accuracy current monitor output (sample & hold function) Built-in overcurrent and thermal protection circuits
46
High-side Power Switch ICs [Surface-mount 2-circuit, current monitor output function] SPF5017
VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033µF
VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033µF, Ta = 125°C
*1
*2
*4
*3
*3
Io = 0.5A, Vcc = 5V,
C1 = 0.033µF
1
2
3
5
4 6
20
18
19
17
Vcc
70kΩCMOS Logic
S/H
OSCChargePump
TSD OCP
lamp
SFP5017
–+
Sense R
Sense MOS
Sense+
Sense–
OUT
VB
LGC
PWM
Hold
S/H
clamp
D
S
Ordinary operation (auto hold)
Ordinary operation (auto hold)
Ordinary operation (external hold)
Thermal protection
Overcurrent protection
VPWM
Vout
Icoil
VS/H
VHold
*1 *1 *2
500 to 650 500 to 650usec usec
Truth table
VPWM L H
VOUT L H
1.0
10.5
±0.3
+0.1–0.05
0.25+0.15–0.05
Fin thickness
14.74±0.2
2.5±0
.27.
5±0.2
2.0±0
.2
13.04±0.2
1.27±0.25
20
1 10
11
0.4+0.15–0.05
a
b
a) Part No.b) Lot No.
Block Diagram (for one channel)
Standard Connection Diagram
Timing Chart
VCCVB
1
SFP5017PWM
Hold
S/HC
C1
D2
D1
LG
OUT
Sense+
Sense–
17
19
18
20
1kΩ
5.10.01
4 6
5
3
2Controlling
microcomputerCPU
* Use a Schottky Di for D2 when the Sense+ terminal is lower than the abs. max. rated voltage (–0.8V)
µFkΩ
(VB=14V, Ta=25ºC unless otherwise specified) – One circuit equivalent
Current sensing voltage
Note:
*1: Accuracy warranty range for current monitor output
*2: Equivalent errors are not included in current monitor output accuracy.
*3: With built-in pull-down resistance (70kΩ typ)
*4: Self-excitation and oscillation type
*5: Accuracy of current monitor output is affected by the materials of the hold capacitor (C1). The capacitor C1 must be of low dielectric absorption and have good bias and leak current characteristics.
*1
70kΩ
47
External Dimensions (unit: mm)Features Internal current sense resistor High accuracy current monitor output (sample & hold function) Built-in overcurrent and thermal protection circuits
48
High-side Power Switch ICs [Surface-mount, current monitor output function] SPF5018
12.2±0.2
1.0
2.5±0
.27.
5±0.2
10.5±0.2
1.27±0.25
16
1 8
9
+0.1–0.05
0.4+0.15–0.05
0.25+0.15–0.05
2.0
+0.
2–0
.8
Fin thickness
2
3
4
6
5 7
15
13
14
11
Vcc
CMOS Logic
S/H
OSC
TSD OCP
lamp
Sense MOS OUT
VB
LGC
PWM
Hold
S/H
clamp
D
S
Block Diagram (for one channel)
Standard Connection Diagram
Timing Chart
VCCVB
2
SFP5018PWM
Hold
S/HC
C1
D2
D1
LG
OUT
Sense+
Sense–
11
14
13
15
5.10.01
5 7
6
4
3
* Use a Schottky Di for D2 when the Sense+ terminal is lower than the abs. max. rated voltage (–0.8V)
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings (Ta=25ºC)
Power supply voltage 1
Power supply voltage 2
Power supply voltage 3
Output terminal voltage
Input terminal voltage
Output current
Power dissipation
Storage temperature
Channel temperature
VB
Vcc
VB
Vsense+
Vsense–
VOUT
VPWM
VHold
IOUT
PD
Tstg
Tch
V
V
V
V
V
V
A
W
°C
°C
VB terminal, t = 1 min
Depends on surface-mount board pattern
0 to 32
–0.5 to 7.0
0 to 40
–0.8 to 6
Vsense+±Io • Rsense
–2 to 32
–0.5 to 7.0
2.0
2.0
–40 to +150
150
Current sensing voltage
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
Min. operating power supply voltage
Operating power supply voltage 1
Operating power supply voltage 2
Quiescent circuit current 1
Quiescent circuit current 2
PWM terminal input voltage
PWM terminal input current
Hold terminal input voltage
Hold terminal input current
Output ON resistance
Current sensing resistance
Overcurrent protection starting current
Thermal shutdown operating temperature
Operation circuit for current monitor output
Current monitor output voltage
Current monitor output current
Output transfer time
Output rise time
Output fall time
Current monitor output hold time
Current monitor output delay time
Hold time after inputting hold
S/H settling time
VB min
VB
VCC
Iqvb
Iqvcc
VPWMH
VPWML
IPWMH
VHoldH
VHoldL
IHoldH
RDSon
Rsense
Is
Ttsd
Io
VSH
ISH
ton
toff
tr
tf
tsh
tshd
tshh
tstt
Minimum operation of OUT terminal.
Vcc = 5V, VPWM = 0V
Vcc = 5V, VPWM = 0V
Vcc = 5V
Vcc = 5V, VPWM = 5V, Active H
Vcc = 5V
Vcc = 5V, VPWM = 5V, Active H
IOUT = 1A
IOUT = 1A, Ta = 125°C
IOUT = 1A
IOUT = 1A, Ta = 125°C
Io = 0A, Vcc = 5V
Io = 0.2A, Vcc = 5V
Io = 0.5A, Vcc = 5V, Ta = –40 to 140°C
Io = 1.2A, Vcc = 5V, Ta = –40 to 140°C
Io = 1A, Vcc = 5V, VSH = 0V
Io = 1A, Vcc = 5V, VSH = 5V
Io = 0.5A, Vcc = 5V
V
V
V
mA
mA
V
µA
V
µA
Ω
Ω
Ω
Ω
A
°C
A
V
V
V
V
mA
mA
µs
µs
µs
µs
µs
µs
µs
µs
µs
6
10
3.5
3.5
3.0
150
0.2
0.488
1.219
2.925
–6
500
14
5.0
70
70
0.500
1.250
3.000
16
7.2
0.2
1.5
110
1.5
110
0.14
0.21
0.21
0.25
1.2
0.2
0.512
1.281
3.075
5
15
15
100
50
650
1
2
70
80
VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033µF
VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033µF, Ta = 125°C
*1
*2
*4
*3
*3
Io = 0.5A, Vcc = 5V,
C1 = 0.033µF
(VB=14V, Ta=25ºC unless otherwise specified)
Note:
*1: Accuracy warranty range for current monitor output
*2: Equivalent errors are not included in current monitor output accuracy.
*3: With built-in pull-down resistance (70kΩ typ)
*4: Self-excitation and oscillation type
*5: Accuracy of current monitor output is affected by the materials of the hold capacitor (C1). The capacitor C1 must be of low dielectric absorption and have good bias and leak current characteristics.
*1
Ordinary operation (auto hold)
Ordinary operation (auto hold)
Ordinary operation (external hold)
Thermal protection
Overcurrent protection
VPWM
Vout
Icoil
VS/H
VHold
*1 *1 *2
500 to 650 500 to 650usec usec
Truth table
VPWM L H
VOUT L H
1kΩ
Controllingmicrocomputer
CPU
µFkΩ
70kΩ
70kΩ
ChargePump
Sense R
–+
Sense+
Sense–
49
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
(Ta=25ºC)
Power supply voltage
Input terminal voltage
Power Dissipation
Input voltage
Power supply voltage
Quiescent circuit current
Overcurrent protection starting current
Forward voltage of output stage diode
Output transfer time
(VB=14V, Ta=25ºC unless otherwise specified)
Storage temperature
Channel temperature
Output avalanche capability
VB
VIN
VBopr
VIN = 0V (all inputs)
IO = 1A
RL = 14Ω, IO = 1A
RL = 14Ω, IO = 1A
RL = 14Ω, IO = 1A
RL = 14Ω, IO = 1A
V
5
0.4
0.5
0.6
0.7
50
7
5.5 25
mA
1.5
5.5 V
12
8
10
5
V
A
V
µs
µs
Iq
Operating circuit current VIN = 5V (all inputs) 8 12 mAICC
3.5
–0.5
VIN
VIN
IS
Thermal protection starting temperature
151 165
1.1
41
Output rise time µsTr
Output fall time µsTf
ºCTTSD
Overvoltage protection starting voltage
25 VVB (ovp)
VF
Output leak current VO = 37V
IF = 0.5A
10
1.6
40
µAIOH
Output clamp voltage IO = 1A55 VVOUT (clamp)
Output ON resistance
30
ΩRDS (ON)
VB = 5.5VΩ
TON
TOFF
PD
Tstg
Tch
EAV
Hi output
Lo output
Input currentVIN = 5V
VIN = 0V
50 µA
µA
IIN
IIN
Hi output
Lo output
V
V
W
ºC
ºC
mJ Single pulse
40
–0.5 to +7.5
Output terminal voltage VOUT V37
Output current IO A1.8
2
–40 to +150
150
50
Equivalent Circuit Diagram
Circuit Example
Timing Chart
External Dimensions (unit: mm)Features DMOS 4ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent, overvoltage and thermal protection circuits
Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A
50
12.2
1.0
2.5
7.5
10.5
1.27
16
1 8
9
0.4+0.15–0.05
+0.1–0.05
+0.15–0.05
+0.
2–0
.8
0.25
2.0
Fin thickness
VB VOUT 1
VIN 1
VIN 2
VIN 3
VIN 4
VOUT 2
VOUT 3
VOUT 4
L-GND
P-GND
Reg. REF
OVP
TSD
250kΩ typ
Gate Protction
Gate Driver
OCP
Use L-GND and P-GND being connected.
VB
VOUT
VIN
OVP
Normal Overvoltage Overheat Overcurrent
* Self-excited frequency is used in the overcurrent protection.
VIN VO
H L
L H
Truth table
±0.2
±0.25
±0.2
±0.2
±0.2
VCC
VB4
6
12
14
IN1
OUT1 OUT3 OUT2 OUT4
IN2
IN3
IN4
L-GND P-GNDCONTROLUNIT 13 1,9
SPF5002A
2 10 7 15 5
Note: * At the clamping operation, refer to VOUT (clamp) in the section of electrical characteristics.
*
51
Quiescent Circuit Current
0 10 20 30 400
4
8
Iq (
mA
)
VB (V)
6
2
10
0
4
8
6
2
10
0
4
8
6
2
10
Circuit Current (single circuit)
0 10 20 30 40
Id (
mA
)
VB (V)
Threshold Input Voltage
0 1 2 30
5
10
VO (
V)
VIN (th) (V)
15
Overcurrent Protection Characteristics
0 1.0 2.00
VO
(V
)
IO (A)
10
5
15
Forward Voltage of Output Stage Diode
0 0.5 1.0 1.50
0.5
1.5
I F (
A)
VF (V)
1.0
Output ON Voltage
0 0.5 1.0 1.5 2.00
0.4
0.8
VD
S (O
N) (
V)
IO (A)
0.6
0.2
1.0
Circuit Current (4 circuits)
10 20 30 40
Id (
mA
)
VB (V)
Overvoltage Protection Starting Voltage
0 10 20 30 400
VO
(V
)
VB (V)
10
5
15
Ta = 120ºC
Ta = 25ºC
Ta = –40ºC
Ta = 125ºC
Ta = 25ºC
Ta = –40ºC
Ta = 25ºC
Ta = –40ºC
Ta = 125ºC
VO = 14VIO = 0.1A Ta = –40ºC
Ta = 125ºC
Ta = 25ºC
VB = 14V
Ta = 125ºCTa = 25ºC
Ta = –40ºC
VB =14V
Ta = 120ºC
Ta = 25ºC
Ta = –40ºC
IO = 0.1A
Ta = –40ºCTa = 25ºCTa = 125ºC
Electrical Characteristics
Ta = –40ºCTa = 25ºCTa = 125ºC
Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings (Ta=25ºC)
Power supply voltage
Power Dissipation
Storage temperature
Channel temperature
Output avalanche capability
VB
PD
Tstg
Tch
EAV
V
W
ºC
ºC
mJ Single pulse
40
Input terminal voltage V( IN, SEL, B/U) V–0.5 to +6.5
Output terminal voltage (DC) VOUT V50
Output terminal voltage (pulse) VOUT VOutput clamping (max 70V)
Output current (DC) IOUT A±2.9
Output current (pulse) IOUT AOver current protection starting current
Diag output source current VDIAG V6.5
Diag output voltage IDIAG mA5
2.8
–40 to +150
150
80
Equivalent Circuit Diagram
Circuit Example
Timing Chart
External Dimensions (unit: mm)Features DMOS 4ch output Allows ON/OFF using C-MOS logic level Built-in over current and thermal protection circuit and diagnostic function to detect open load Built-in output status signals (over current, over heat and open load)
52
VB(7)
VINB/U(17)
VINSEL(5)
VIN1(6)
VIN2(8)
VIN3(18)
VIN4(20)
L-GND(19)
VOUT1(4)
VOUT2(9)
VDIAG1(3)
VOUTSENSE
VDIAG2(10)
P-GND1(1, 2)
P-GND2(11, 12)
VOUT3(16)
VDIAG3(15)
P-GND3(13, 14)
VOUT4(21)
VDIAG4(22)
P-GND4(23, 24)
RegRef
Gate Protection
Gate driver
TSD
OUT OCPLatch
Set
Reset
OSC
Monitor
VB
7
6
3
10
15
22
8
18
20
17
19 1, 2 11, 12 13, 14 23, 24
5
4 9 16 21
LG PG1 PG2 PG3 PG4
VIN1
VIN2VIN3
VIN4
VINB/U
VINSEL
OUT1 OUT2 OUT3 OUT4
DIAG1DIAG2
DIAG3
DIAG4
SPF5009
Main input signal 1VIN1
Main input signal 2VIN2
Backup input signalVINB/U
Input select signalVINSEL
Power supply voltageVB
Output voltage 1VOUT1
Output current 1IOUT1
DIAG output 1VDIAG1
DIAG output 2VDIAG2
Nomal Nomal
Main mode Backup mode
Output 1Overheat
Output 1Overheat
Output 1Over current
Output 1Open load
Output 1Over current
Output 1Open load
OCP OCP
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
Quiescent circuit current
Operating circuit current
Overcurrent protection starting current
Forward voltage of output stage diode
Output moniter threshold voltage
(VB =14V, Ta = 25ºC unless otherwise specified)
Iq VB=14V, VIN=0V
VB=14V, VO=1A
VB=14V
VB=14V, RL=14Ω, IO=1A
VB=14V, RL=14Ω, IO=1A
VB=14V, RL=14Ω, IO=1A
VB=14V, RL=14Ω, IO=1A
VB=14V, RL=14Ω, IO=1A
VB=14V, RL=14Ω, IO=1A
9
65
15
12
Power supply voltage VB (opr) V5.5 40
mA
200
1.5
V
12
8
10
5
V
V
V
V
µs
µs
Id
Input voltage(1 to 4, SEL, B/U)
Input current (single circuit)(1 to 4, SEL, B/U)
VB=14V, VIN=5V (all inputs)12
6.5
mA
VIN (H) 3.5
–0.5VIN (L)
IIN (H)
IS
Thermal shutdown operating temperature 151 165
60
Output rise time
Output fall time
Output transfer time
µsTr
µsTf
12DIAG output transfer time
t DON
8 µs
µs
t DOFF
ºCTTSD
3.0 A
DIAG output voltage6.4
VVDIAG (L)
VDIAG (H)
VthM
Output leak current
IF=1A
0.5
10DIAG output leak current µAIDH
IOH
VF
Output clamp voltage
Output ON resistance
VB=14V, IO=1A
VB=14V, VO=50V
70
50
1.5
2
6.5
VVOUT (clamp)
VB=14V, IO=1A 0.18 Ω
TON
TOFF
VB=14V, VIN=0V
VB=14V, VIN=5V
VB=14V
VB=14V, VDIAG=6.5V
VB=14V, IDIAG=5mA
VB=14V, VDIAG=6.5V
VB=14V
VB=14V
30 µA
µA
µA
IIN (L)
RDS (ON)
1.0
10.5
±0.3
+0.1–0.05
0.25+0.15–0.05
2.0+
0.2
–0.8
17.28±0.2
2.5
±0.2
7.5
±0.2
15.58±0.2
1.27±0.25
24
1 12
13
0.4+0.15–0.05
a
b
a: Part No.b: Lot No.
Fin thickness
Low-side Switch ICs [Surface-mount 4-circuits] SPF5009 (under development)
53
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
(Ta=25ºC)
Power supply voltage 1
Power supply voltage 2
Logic input voltage
Power Dissipation
Input voltage
Quiescent circuit current
Overcurrent protection operating current
Forward voltage of output stage diode
Output transfer time
(VB =14V, Ta =25ºC unless otherwise specified)
Storage temperature
Channel temperature
Output avalanche capability
VB
VIN
VCC (opr)
VB=14V, VIN=0V
VB=14V, VO=1A
VB=14V
VB=14V, RL=14Ω, IO=1A
V
4
50
6
4.5 5.5
Operating power supply voltage 1
Operating power supply voltage 2
VB (opr) V5.5 40
mA
1.5
5.5 V
12
8
10
5
V
A
V
µs
µs
Iq
Operating circuit current VB=14V, VIN=5V 8 12 mAId
3.5
–0.5
VIN
VIN
IS
Thermal shutdown operating temperature 151 165
0.2
8
6
A 5
0.195
45
Output rise time µsTr
Output fall time µsTf
0.205Output-diag voltage ratio ra (DIAG)
VB=14V, VCC=5V, VO=40V
VB=14V, VO=1 to 14V, Rdiag=500kΩ
4.85Diag output clamping voltage VVDIAG (clamp)
ºCTTSD
6 A
Overvoltage protection starting voltage 25 VVB (ovp)
VF
Output leak current
VB=14V, VCC=5V, VIN=0V, VO=40V, Ta=25ºC
VB=14V, VCC=5V, VIN=0V, VO=14V, Ta=25ºC
IF=1A
2.8
1.6
40
Overvoltage protection hysteresis voltage VVB (ovp•hys)
mA
IOH
900 µA
Output clamp voltage VB=14V, IO=1A55 VVOUT (clamp)
Output ON resistanceVB=14V, IO=1A, Ta=125ºC0.3
–30
ΩRDS (ON)
VB=14V, IO=1A, Ta=25ºC0.2 Ω
TON
TOFF
PD
Tstg
Tch
EAV
Hi output
Lo output
Input currentVB=14V, VIN=5V
VB=14V, IO 1A
VB=14V
VB=14V, Ta=–40ºC
VB=14V, Ta=25ºC
VB=14V, Ta=125ºC
50 µA
µA
IIN
IIN
Hi output
Lo output
V
V
W
ºC
ºC
mJ Single pulse
40
–0.5 to +7.5
Output voltage VO V40 (DC)
Output current IO ASelf Limited
VCC V7.5
Diag output voltage VDIAG V0 to VCC
2.8 to 5
–40 to +150
150
100
Equivalent Circuit Diagram
Circuit Example
Timing Chart
External Dimensions (unit: mm)Features
Output monitor circuit (DIAG) DMOS 4ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent, overvoltage and thermal protection circuits
Low-side Switch ICs [Surface-mount 4-circuits with Output Monitor] SPF5012
54
VIN VO
H L
L H
Truth table
VIN1VIN2
VCC1-2 VCC3-4 VOUT1 VOUT2 VOUT3 VOUT4VB
VCC
VIN3VIN4
L-GND
6
7 18 19 3 10 15 22
58
1720
1621
49
11,12 13,14 23,241, 2
P-GND1 P-GND2
Diag1Diag2Diag3Diag4
P-GND3 P-GND4
SPF5012Input signal
Diagoutput
VB(19)
VIN1(4)
VIN2(9)
VIN3(16)
VIN4(21)
L. GND(6)
VCC1-2(7)
VCC3-4(18)
Diag1(5)
Diag2(8)
Diag3(17)
Diag4(20)
VOUT1(3)
VOUT2(10)
VOUT3(15)
VOUT4(22)
P. GND1(1, 2)
P. GND2(11, 12)
P. GND3(13, 14)
P. GND4(23, 24)
Gate Protection
RegOVP
OCP
TSD
Ch1
Ch2
Ch3
Ch4
Gate driver
*1. At the clamping operation, refer to the section of VOUT (clamp) in electrical characteristics*2. Changes by the patern of mounted substrate
*1
*2
1.0
10.5
±0.3
+0.1–0.05
0.25+0.15–0.05
2.5
±0.2
17.28±0.2
7.5
±0.2
2±0
.2
15.58±0.2
1.27±0.25
24
1 12
13
0.4+0.15–0.05
a
b
a: Part No.b: Lot No.
Fin thickness
VB
VOUT
VIN
OVP
Normal Overvoltage Overheat Overcurrent
* Self-excited frequency is used in the overcurrent protection.
Short L-GND and P-GND in a pattern near the product.
55
OUTA OUTA
4 5
STBYP-GND L-GND L-GND
9 8 1
C
12
3
10
2
6 11 7N.C.
4.7kΩ
OUTB OUTB VS
DIAG
IA/A
IB/BZD: VS <35VC 100µF(Reference)
Stepper motor
SLA4708M CPU
ZD
5V
+
Standard Circuit Diagram
External Dimensions (unit: mm)
Stepper-motor Driver ICs SLA4708M
56
Features High output breakdown voltage of 50V Affluent output current of 1.5A Built-in overcurrent, overvoltage and thermal protection circuits Low standby current of 50µA
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
(Ta=25ºC)
Power supply voltage
Breakdown voltage
Input voltage
Input voltage ( IA/A, IB/B standby)
Input current
(VS=12V, Ta=25ºC)
Diagnostic output withstand voltage
Operating temperature
Storage temperature
Power Dissipation
VS
VO
VIN
VIL
VIN = 0.4V
2.4
50
0.8
50
V
–0.8 mA
VVIH
IIL
VIN = 2.4V
IO = 1A, Ta = 25ºC
µAIIH
Output saturation voltage1.3 VVO.STA
IO = 1.5A, Ta = 25ºC
VO = 16V
IDIAG = 5mA
VS = 12V
1.5
100
0.3
VVO.STA
Output leak current µAIO.LEAK
1.8Overcurrent detection AISD
27.5 Overvoltage detection VVSD
Saturation voltage of diagnostic output
VVDIAG.L
Standby current µAISTB
IDIAG
IDIAG. H
Top
Tstg
PD
V
V
Without heatsink
V
mA
V
ºC
ºC
W
35
50
–0.3 to +7
Output current
Diagnostic output sink current
IO, AVE A1.5
10
7
–40 to +85
–40 to +150
3.5 (Ta=25ºC)
1 2 3
11•P2.54±0.7=27.94±1.0
31.5 max
0.851.2±0.15
31.0±0.2
24.4±0.2
16.4±0.2
3.2±0.15
Ellipse 3.2±0.15 • 3.8
0.55 2.2±0.7
1.7±0.74.8±0.2
1.45±0.15
Pin 1 12
4 5 6 7 8 9 10 11 12
8.5
max
9.5
min
(10.
4)
Lead
pla
te th
ickn
ess
resi
ns 0
.8m
ax
9.9±0
.2
13.0
±0.2
16.0
±0.2
2.7
+0.2–0.1 +0.2
–0.1
a: Part No.b: Lot No.
a
b
00
10 20 30
Power supply voltage VS (V)
20
10
0
200
At
stan
db
y IS
(µA
)
Po
wer
sup
ply
cur
rent
At
Co
nsta
nt I
S (m
A)
Constant (ST = 5V)
At standby (ST = 0V)
100
0 10 20 300
10
12
14
2
4
6
8
Out
put
vo
ltag
e V
O (V
)
Power supply voltage VS (V)
35
=T 25ºCaV 12Vcc=
Common for all phases
0 1.0 2.0 3.00
1.0
2.0
Sat
urat
ion
volta
ge
of
out
put
tra
nsis
tor
Vsa
t (V
)
Output current IO (A)
Ta =25ºC
Common for all phases
0.5
1.5
00
Out
put
vo
ltag
e V
O (V
)
Junction temperature Tj (ºC)
=V 5VST
10
Vcc (Vs) =12V
110 120 130 140 150 160
j2T j1T
14
12
2
4
6
8
57
Power Supply Current Characteristics Overvoltage Protection Characteristics Saturation Voltage of Output Transistor Characteristics
Thermal Protection Characteristics
Electrical Characteristics
Vcc (Vs) =16V
Stepper-motor Driver ICs SLA4708M
Standard Circuit Diagram
External Dimensions (unit: mm)Features Low output saturation voltage (high-side: 1.5V max.; low-side: 0.8V max.) Built-in recovery diode Built-in standby function Built-in overcurrent and thermal protection circuits and low voltage input shutoff function Built-in overload and disconnection detection function
2-ph Stepper-motor Driver ICs SPF7211
58
1.0
10.5
±0.3
+0.1–0.05
0.25+0.15– 0.05
Fin thickness
2.5±0
.2
17.28±0.2
7.5±0
.2
2±0.2
15.58±0.2
1.27±0.25
24
1 12
13
0.4+0.15–0.05
a
b
Parameter Symbol Unit RemarksRatings
Absolute Maximum Ratings
Recommended Operation Range
Electrical CharacteristicsParameter Symbol min typ max Unit Conditions
Ratings
Main power supply voltageInput voltage
Output current
Flag terminal withstand voltageFlag terminal currentDetect voltage
Power dissipation
Junction temperatureOperating temperatureStorage temperature
Main power supply current Low voltage protection operation voltageUVLO hysteresis voltage
Output leak current
Output saturation voltage
Recovery diode forward voltage
Input voltageInput terminal
Hysteresis voltage
Ph terminal Input current
Ixx, Set terminals Input current
Detect voltage Oscillation frequencyPWM frequency
Ct terminal threshold voltage
Ct terminal current
Overcurrent detection voltage Open detection voltageFlag terminal leak currentFlag terminal saturation voltageFlag terminal current
Set terminal Pulse rate Pulse number
OCP operation
Open operation
I/O propagation time Thermal protection temperatureThermal protection hysteresisThermal alarm temperatureThermal alarm hysteresis
VBBVINIo
IoPeakVFlagIFlagVRs
PD
TjTopTstg
40–0.3 to 15
±0.8±1.0
73
–2 to 24.139
150–40 to 110–40 to 150
IBBIBBS
VUVLOVUVLOhysIoleakLIoleakH
VsatL
VsatH
VFLVFH
VFGOVILVIH
VIhysIILIIHIILIIH
VRs
FoscFPWMVctLVctH
IctsinkIctsouceVocpLVocpHVocpLVocpHVopen
IleakFlagVFlagLIFlagTpwTpws
FclockPulsetocp1tocp2tocp3
topen1topen2tonH1toffH1tonH2toffH2tonL1toffL1tonL2toffL2
Tj∆Tj
Talarm∆Talarm
In ordinary operation (no load)At sleep
VBB = 40V, Vo = 0VVBB = Vo = 40VIo = 0.5AIo = 0.8AIo = –0.5AIo = –0.8AIo = 0.5AIo = –0.5AIo = –0.5A
VIL = 0.8VVIH = 2.0VIx0 = High, Ix1 = HighIx0 = Low, Ix1 = HighIx0 = High, Ix1 = LowCt = 2200pF±20%Ct = 2200pF±20%
Out voltageOut voltageVBB = 5.5VVBB = 5.5VSence voltageVFlag = 7VIFlag = 1mA
In ordinary operationAt sleepCt = 2200pF
In ordinary operation; Ct = 2200pFAt switching the phaseWhen Ixx shifts from L to HIn ordinary operationWhen Ixx shifts from L to H
mAµAVV
µAµAVVVVVVVVVV
µAµAµAµAmVmVmVkHzkHz
VV
µAµAVVVV
mVµAV
mAµSµSHz—µSµSµSµSµSµSµSµSµSµSµSµSµS°C°C°C°C
0.5
0.5
7004507048240.51.5720–1203.0
VBB–2.0
–60
242565.0
10.010.05.05.01.51.5
2.00.5
2013020
3.5
–100
1.2
2.0
–5–5
–30
66042040
28.814.4
1.5VBB–2.5
1.0VBB–2.3
1010017
2.55.05.02.52.5
100100
100100150
120
50504.5
1000.50.81.21.51.21.3
0.8
55
50740480907236
4.2VBB–1.7
1.85VBB–1.5
100.53
31
10.020.020.010.010.0
140
VV
A
VmAV
W
°C°C°C
VIN VBB
Tw 1mSVFlag VBB
For Ta = 25°CFor Tc (Ttab) = 25°C
Note:
*1: The Ct terminal threshold voltage and current are the design values. Warranty is based on the oscillation frequency.
*2: Thermal protection and alarm temperatures are design values.
*1
Note: *1: With glass epoxy + copper foil board (size 5.0•7.4cm; t: glass epoxy = 1.6mm/copper foil = 18µm)
Parameter Symbol Unit RemarksRatings
Main power supply voltageInput voltageOutput currentFlag terminal withstand voltageFlag terminal currentDetect voltageOperating temperature
VBBVINIo
VFlagIFlagVRsTop
6 to 18–0.3 to 7.0
±0.50 to 7.00 to 1.0–1 to 1
–40 to 110
VVAV
mAV
°C
VIN VBBContinuousVFlag VBB
*1
*2
µPC(ECU)
Rs
Rs
Ct2200pF
+VBB = 6 to 18V
SPM
I20
I21
Ph2
FL1
GN
D
GN
D
GN
D
GN
D
Out
2A Rs2
FL2
Out
2B
I10
I11
Ph1
Ct
Set
GN
D
GN
D
GN
D
Out
1A
Rs1
VB
B
Out
1B
1 121324
Rs 1Ω typ (1 to 2W)IoM VRs/Rs
Excitation Signal Time Chart2-phase excitation
1 to 2-phase excitation
Clock 0 1 2 3 0 1 Ph1 L H H L L HI10, I11 H H H H H H Ph2 L L H H L LI20, I21 H H H H H H
Clock 0 1 2 3 4 5 6 7 0 1 2 3 Ph1 L H H H H L L L L H H HI10, I11 H L H H H L H H H L H H Ph2 L L L H H H H L L L L HI20, I21 H H H L H H H L H H H L
* For the 1 to 2-phase excitation application, switch the Ph signal in the step of 1-ph excitation (Ixx turns from high to low). The OPEN detection function is invalid except in this sequence.
Flag response time
Response pulse width
a) Part No.b) Lot No.
59
Electrical Characteristics
2-ph Stepper-motor Driver ICs SPF7211
–30 –10 10 5030 9070 110 130 150 –30 –10 10 5030 9070 110 130 1500
Sat
urat
ion
volta
ge
Vsa
t (V
)
Junction temperature (ºC)
–30 –10 10 5030 9070 110 130 150
Junction temperature (ºC)
0.8
0.6
0.4
0.2
1.2
1
0 25 50 75 100 125 1500
Po
wer
dis
sip
atio
n P
D (W
)
Ambient temperature Ta (ºC)
20
10
40
30
0.5
Fo
rwar
d v
olta
ge
VF (V
)
Junction temperature (ºC)
1.7
1.5
1.3
1.1
0.9
0.7
55
49
53
51
45
47
Osc
illat
ion
freq
uenc
y F
OS
C (k
Hz)
Copper foil area(5.0•7.4mm, t=18µm) j-a 30.5°C/W
Infinite heatsink equivalent (Tc=25°C) j-tab 3.2°C/W
VsatH VFGO
VFH
VFL
VsatL
FOSC
Ct=2200pF
Vsat Temperature Characteristics (Io=0.5A) Diode VF Characteristics (IF=0.5A)
Ta-PD Characteristics OSC Temperature Characteristics
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Electrical CharacteristicsParameter Symbol
min typ maxUnit Conditions
Ratings
(Ta=25ºC)
Motor supply voltage
Input terminal voltage
PWM control frequency
Forward • reverse rotation switch frequency
Power dissipation
Input terminal voltage
Input terminal current
Motor supply voltage
Output saturation voltage
Static circuit current
DIAG output pulse width
DIAG terminal voltage
(Unless, otherwise specified, Tj=Tch=25°C, VM=14V, IO=3A)
Output leakage current
Junction and channel temperature
Operating temperature
Storage temperature
VM
IN1
IN2
PWM
fPWM
VIN
IO=3A
VM=40V
VM=40V
VIN1=VIN2=VPWM
Brake mode
VIN1=VIN2=VPWM
VIN1=VIN2=VPWM=0V
VIN1=VIN2=VPWM=5V
IO=10A
IO=3A
IO=10A
IO=3A
VPWM: H L (Vth=2.5V typ)
Stop mode
Forward and reverse mode
C=1µF (typ)
ID•SINK=1mA
V
0.3
6 18
V
100 µA
100 µA
V
2.0 V
200
µA
22
1.0
0.8
1.0
0.8
22
16
0.3
µA
V
mA
mA
mA
ms
V
V, VO-PG
IO=3A
VM=24V (2 min.)
0.8 V
Output transmission time
Forward voltage characteristic of diode between drain and source
VPWM: L H (Vth=2.5V typ)
3.0
–100
10
15
10
µs
µs
µs
V
V
V
tpLH
tpHL
tpHL-tpLH
VF•L
VF•H
IL, L
V, VM-VO
IL, H
VIN, H
VIN, L
IIN, L
IIN, H
OPC start current 16
20
AIOCP
IM1
IM2
IM3
tDIAG
VD•L
fCW
PD1
PD2
Tj, Tch
TOP
Tstg
V
V
V
V
Without heatsink
With infinite heatsink
Duty=20% to 80%
PW 1ms, Duty 50%
kHz
Hz
W
W
ºC
ºC
ºC
40
–0.3 to 7
–0.3 to 7
–0.3 to 7
20
500
Output currentIO
IO (p-p)
A
A
±5
±17
3.6
33.7
–40 to +150
–40 to +85
–40 to +150
Thermal resistance j-c ºC/W 3.7
j-a ºC/W 35
Standard Connection Diagram
Equivalent Circuit
Timing Chart
External Dimensions (unit: mm)Features P-ch MOS for high side and N-ch MOS for low side in one package Enable to drive DC±5V Possible to drive a motor at the LS-TTL, C-MOS Logic level Guarantee Tj=Tch=150°C Built-in over current protection and thermal shut down circuits Built-in diagnosis function to monitor and signal the state of each protection circuits Built-in vertical current prevention circuits (Dead time is defined internally.) No insulator required for Sanken's original package (SPM package)
60
Full Bridge PWM Control DC Motor Driver ICs SI-5300
*
*2
*3
*1
*4
Note: *1: The standard value of IOCP is assumed to be a value by which the output of each Power MOS FET cuts off. When the protection circuit of OCP and TSD operates, Power MOS FETs keeps cutoff. When a signal (5V: H 0V: L) is input to the terminal PWM, the cutoff operation will be released. Moreover, three minutes (Ta=25ºC, fPWM=10kHz, VM=14V) are assumed to be max at the overcurrent state continuance time in the VM operation and the ground of output terminal (OUT1, OUT2). It is not the one to assure the operation including reliability in the state that the short-circuit continues for a long time.
Output transmission time tpHL is time from Vth (2.5V typ) of the terminal of PWM to output (VOUT *0.1) of the output terminal.
Output transmission time tpLH is time from Vth (2.5V typ) of the terminal of PWM to output (VOUT *0.9) of the output terminal.
a: Part No.b: Lot No.
0.75+0.2–0.1
16.1
±0.2
a
b
(28.4)
(4.5
)
14• P2.03±0.1=(28.42)
35±0.3
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
0.45+0.2–0.1
7.6±0
.5
3.6±0
.5(4
)
4.8±0.2
2.7±0.2
2±0.5
4.5±0.7
(R0.8)
(R0.8)
R-end
Protection circuit
VM=2V VM=2V
VM
VM-OUT1(Pch1 VDS)
VOUT1-GND(Nch1 VDS)VOUT2-GND(Nch2 VDS)
OUT1
OUT2
TDIAG
DIAG 20ms(min)DIAG Threminal
VCC=5V Pull-up
IOUT (A)
VM-OUT2(Pch2 VDS)
IN1
IN2
PWM
Return to constant action
Therminal name
IN1
IN2
PWM
OUT1
GND
OUT2
IOUT (A)
Forward Duty ON
Forward Duty OFF
Reverse Duty ON
Reverse Duty OFF
Stop(Free Run)
Stop(Free Run)
High inpidance
High inpidance
High inpidance
M
VM VM
OUT1
OUT2
VM
IN1
IN2
PGND PGND
LGND
DIAG
TDIAG
CDIAG1µF
ECU insideVCC
PULL-UPResistor
PWM
Pre-Rec
TSDB
B
B B
B
Pch1 Pch2
Nch1 Nch2
B
A
AA
A
A
A
FF
Q SR
DeadTime
DeadTime
PWMdownedgesense
OCP OCP
DIAGCONTROL
OCP OCP
SI-5300
14, 15OUT2
1, 2OUT1
3, 5, 13VM
Relay
Battery
Capacitor220µF
CPU
6 IN1
11 IN2
7 PWM
10 DIAG
9TDIAG
VCC 8LGND
4,12PGND
Delay Capacitor 1µF
+
Pull-up Resistor10kΩ(Open Collector)
M
GND
Vth
VPWM (5V)
VOUT
VOUT*0.9
GNDtpLH
PWM terminal
OUT terminal
Vth
VPWM (5V)
VOUT *0.1
GND
GNDtpHL
PWM terminal
OUT terminal
*4: DIAG signal output terminal is an open collector output. Use a pull-up resistor when connecting it to a logic circuit.
*3: Output transmission time (tpHL)*2: Output transmission time (tpLH)
Breake Breake
Note: * The dead time for the length current prevention in positive and the reversing switch is set by internal control IC. The set point in internal IC at the dead time is 20µs (typical). Please take into account the dead time and consider the load conditions when you use the IC.
Duty on
Output saturation voltage (Pch)
Quiescent circuit current
Output saturation voltage (Nch)
Voltage of input terminal (Threshold voltage)
VTDIAG – VDIAG Characteristics
Forward voltage of Diode between drain and source
Current of input terminal (SINK current)
Thermal shut down protection Current of input terminal (Source current)
00
1 2 3 4 5 6 7
V•
VM
-VO
(V)
1.0
0.8
0.6
0.4
0.2
0 10 20 4030
I M (m
A)
VM (V)
00
–2
–4
–6
–8
–10
–12
10 20 4030
I IN1,
I IN
2, P
WM
sou
rce
(µA
)
VM (V)
00
1
2
3
4
5
6
1 2 3 4 5 6
VD
IAG
(V)
VTDIAG (V)
100 125 150 175 200
1
2
3
4
5
6
0
VD
IAG
(V)
Ta (ºC)
IO (A)
0
0 1 2 3 4 5 6 7
0 1 2 3 4 5 6 7
4
8
12
16
VIN1, IN2, PWM (V)
00
1 2 3 4
0.1
0.2
0.3
0.4
0.5
0.6
5 6 7
I SIN
K (m
A)
VIN1, IN2, PWM (V)
00
0.2 0.4 0.6 0.8 1.0 1.2
2
4
6
8
12
10
I FS
D (A
)
VFSD (V)
0
0.1
0.2
0.3
0.4
0.5
IO (A)
V•
VO
-PG
(V)
VO
(V)
VM=14V
Ta=25ºCVM=14VVM=14V
Ta=150ºC
Ta=85ºC
Ta=25ºC
Ta=–40ºC
Ta=150ºC
Ta=85ºC
Ta=25ºC
Ta=–40ºC
Ta=150ºC
Ta=85ºC
Ta=25ºC
Ta=–40ºC
NchMOS FET
PchMOS FET
VM=14V
Ta=150ºC
Ta=25ºC
Ta=–40ºC
Ta=150ºC
Ta=25ºC
Ta=–40ºCTa=150ºCTa=25ºCTa=–40ºC
IIN1=IIN2=PWM=0V VM=10V IO=0A
VM=14V
Electrical Characteristics
61
Pull-up resistance =3kΩ
0
5
10
15
20
25
IO=0ATa=25ºC
Brake
Duty off
Stop
Full Bridge PWM Control DC Motor Driver ICs SI-5300
Pch MOS FET Safe Operating Area (SOA) Nch MOS FET Safe Operating Area (SOA)
2 10 40 1000.3
1
10
100
0.3
1
10
100
I OU
T (
A)
I OU
T (
A)
VM-OUT (V)
2 10 40 100
VOUT -PG (V)
PD—Ta Characteristics
–40 –30 0 25 50 75 1000
5
10
15
20
25
30
35
40
Allo
wab
le P
ow
er D
issi
pat
ion
PD
(W)
Ambient temperature Ta (ºC)
Tc=25ºCInfinite heatsink (Tc =25ºC)
No heatsink
1ms
10ms
100ms
Tc=25ºC
1ms
10ms
100ms
Standard Circuit Diagram
External Dimensions (unit: mm)Features A DMOS of low ON resistance (0.1Ω typ) is mounted on the high and low side power elements Two input signals control the forward/reverse/brake of a DC motor Current limit and overcurrent protection circuits Low voltage and thermal protection, excess input detecting output and input terminal open protection
Full Bridge DC Motor Driver ICs SPF7301(under development)
62
Parameter Symbol Unit RemarksRatings
Absolute Maximum Ratings
Recommended Operation Range
Electrical CharacteristicsParameter Symbol min typ max Unit Conditions
Ratings
Main power supply voltageInput terminal input voltageEN terminal voltage Disable terminal input voltage
Output current
DIAG output currentDIAG inflow current
Power dissipation
Junction temperatureOperating temperatureStorage temperature
Main power supply current
UVLO hysteresis voltage
Output terminal leak current
Output DMOS RDS (ON)
OPC start current
DI terminal voltage
DI terminal current
EN terminal input voltage
EN terminal input current
DIAG terminal output voltageDIAG terminal output currentDIAG terminal leak current
Input delay time
Overvoltage protection operation voltageOVP hysteresis widthThermal protection starting temperatureThermal protection hysteresis width
VB
VIN1,VIN2VEN
VDI
IoIoPeakVDIAG
IDIAG
PD1PD2Tj
TopTstg
j-c
j-a
–0.3 to 36–0.3 to 6
–0.3 to 12–0.3 to 6
±7±15
–0.3 to 6–3394
–40 to 150–40 to 105–40 to 150
3.2
31
IBB1IBB2
VuvloHVuvloL∆UVLOIleakHSIleakLS
RDS(ON)_1HRDS(ON)_2HRDS(ON)_1LRDS(ON)_2L
VF_H1VF_H2VF_L1VF_L2
Iocp1_H1Iocp1_H2Iocp1_L1Iocp1_L2Iocp2_H1Iocp2_H2Iocp2_L1Iocp2_L2
VINxHVINxLIINxHIINxLVDIxHVDIxLIDIxHIDIxLVENthIENHIENL
VDIAG
IDIAG
IDIAGLTdON
TdOFF
TrTf
TddisVOVP
∆VOVP
Ttsd_ON∆Ttsd
For VEN = 0V
Io1 = 1AIo2 = 1AIo1 = –1AIo2 = –1A
VDI = 5VVDI = 0V
VDI = 5VVDI = 0V
VEN = 5VVEN = 0VIDIAG = 0.5mAFor VDIAG = 1.6V
Time from VINxH to Voutx•0.2Time from VINxL to Voutx•0.8Time of Voutx from 20% to 80%Time of Voutx from 80% to 20%Time from DIthH to Voutx•0.2
mAµAVVV
µAµAmΩmΩmΩmΩVVVVAAAAAAAAVV
µAµAVV
µAµAV
µAµAV
mAµAµSµSµSµSµSVV
°C°C
15
0.5
1001001001001.51.51.51.57777
15151515
405
16515
5.04.5
–100
4.54.54.54.5
2
–100–100
2
–100–1000.8
–10
1.5–10
35
151
1007.06.5
100200200200200
10101010
0.8
0.8
4100100.8
152015664
45
VVVVAAV
mAWW°C°C°C
°C/W
°C/W
1kHz, Duty 1%, Pulse 10µS
DIAG terminal sink currentWith an infinite heatsink mounted*1
Note: *1: With glass epoxy + copper foil board (size 5.0•7.4cm; t: glass epoxy = 1.6mm/copper foil = 18µm)
Note:
*2: For the electrical characteristics for Tj = –40 to 150°C, the design warranty applies to the above specification values.
*3: Thermal protection starting temperature is 165°C (typ) by design. The above parameters are the design specifications.
Parameter Symbol Unit RemarksRatings
Main power supply voltageDI terminal input voltageInput terminal input voltageOutput currentDIAG terminal voltageOperating temperature
VB
VDI
VINx
IoVDIAG
Top
8 to 18–0.3 to 5.3–0.3 to 5.3
±1–0.3 to 5.3–40 to 105
VVVAV
°C
*2
*3
*3
(Ta=25ºC)
(Tj = 30 to 125°C, VB = 14V, EN = DI = 5V, Ccp = 33nF, RDIAG = 20kΩ unless otherwise specified)
VB
Full Brige Driver ICIN1
IN2
R1Cin
Power supply
R2RDI
PGND LGND
OUT2
OUT1
DI
DIAGRDIAG
M
Ccp
VccEN CP
SFP7301
* Recommended connection parts Pressure rise capacitor for charge pump circuits (CP to GND) Cp 33nF DIAG terminal pull-up resistance RDIAG: 20kΩ Input terminal pull-down resistance R1, R2, RDI: 10kΩ
10.5
±0.3
1.0+0.1–0.05
Fin thickness
14.74±0.2
13.04±0.2
1.27±0.25 0.4
20 11
1 10+0.15–0.05 0.25
+0.15–0.05
2.5±0
.2
7.5±0
.2
2±0.2
a
b
Thermal resistance(junction to case)Thermal resistance(junction to ambient air)
Low voltage protection operation voltage
Forward voltage characteristics between output DMOS and DS
Overcurrent limiting operation current
Input terminal voltage VIN1, VIN2
Input terminal current VIN1, VIN2
a) Part No.b) Lot No.
63
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
Power MOS FET output leakage voltage
High-side Power MOS FEToutput on-state voltage
Power MOS FET output breakdown voltage
Delay time
BVOUT
IO=0.4A, VIN=10V
VO=500V
IO=100µA
IO=2A, VIN=10V
VCC=10V, VM=400V
VCC=4.5 to 15V
VCC=10A, VIN=10V,
VM=85A,
IO=0.41A
VCC=4.5 to 15V
V500
0.28 0.4
1.4 2.0
100 µA
0.52
2.6
V
V
4.0 mA
0.8VCC V
1.4
V
µs
0.2VCC
V
IOUT (off)
VOUT (on) 1
VOUT (on) 2
Low-side Power MOS FEToutput on-state voltage
IO=0.4A, VGL=10V
IO=2A, VGL=10V
0.28 0.4
1.4 2.0
0.52
2.6
V
V
VOUT (on) 1
VOUT (on) 2
Quiescent circuit currentVCC=4.5 to 15V
VCC=10V, VM=400V
3.0
4.0
mA
mA
ICC 1
ICC 2
ICC 3
VIH
VIL
td (on)
3.3 µstd (off)
–40 to +105ºC
2.5
15
µs∆t
VCC
Input voltage (Low level)
Operating voltage
Operating circuit current
Input voltage (High level)
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Power source voltage
Input voltage
Output voltage
Output current
Power dissipation
Storage temperature
Operation temperature
VM
VIN
VO
IO
PD
Tstg
Topr
V
V
V
A
W
ºC
ºC
500
15
500
15
5 (Ta=25ºC)
–40 to +125
–40 to +105
*
Block Diagram
Timing Chart
External Dimensions (unit: mm)
64
Features One Package Full Bridge Driver Consisted of High Voltage IC and Power MOS FETs (4 pieces) High Voltage Driver which accepts direct connection to the input signal line External components such as high voltage diodes and capacitors are not required
High Voltage Full Bridge Drive ICs SLA2402M
* Power GND (D terminal) to -HV (-HV terminal) voltage.
*
31.0±0.2
4.8±0.2
1.7±0.1
24.4±0.2
16.4±0.2
16.0
±0.2
2.45±0.2
9.9±0
.2
13.0
±0.2
2.7
Ellipse 3.2±0.15•3.83.2±0.15
17• P1.68±0.1=28.56
8.5
max
31.5 max
9.5
min
Lead
pla
te th
ickn
ess
resi
ns 0
.8m
ax
0.65+0.2–0.1
+0.2–0.1
+0.2–0.1
1.0
0.55
4
2
3 6 810
9 1113 16
17
15
7+12V
OUT1 OUT2
GL1 GL2
HO2
LO2
HO1
MIC
CPU
VCC
VIN1 VIN2–HVLO1
D1MOSQ1 MOSQ2
MOSQ'1 MOSQ'2
L GND
* Dotted Line: Outside Connection
VCC
IN1
IN2
HO1
HO2
LO2
LO1
OUT2-GND
—HV0V
–400V
–100V
OSC 400HzIgnition
VIN10V
0V
10%
10% 10%
10%VOUT1
td (on) td (on)
10%
10% 10%
10%
VIN1
0V
0V
VOUT2
td (on) td (on)
Highside switch turn-on, turn-off Lowside switch turn-on, turn-off
* About delay timeSignal input waveform vs output waveform
* ∆t: ∆t=td (on) – td (off)
Measurement Circuit
VIN1
VIN2
VM
VOUT1 VOUT2
VIN2
VIN1
RL
ConditionsVCC=10V, VIN=10V (pulse)VM=85VIO=0.41A (RL=207Ω)
*
Without heatsink
PW 250µsa: Part No.b: Lot No.
1 2
ab
When pulse signal is inputted to VlN1, RL on solid line is ON and dotted line RL is off. On the contrary, when pulse signal is inputted to VlN2, RL on dotted line is ON and dotted line RL is off.
Quiescent circuit current
Quiescent circuit current supplied high voltage
Quiescent circuit current supplied high voltage
Quiescent circuit current
Operating circuit current
Operating circuit current
00
5 10 15 20
0.5
1.0
1.5
2.0
2.5
3.0
Qui
esce
nt c
ircu
it cu
rren
t I C
C1
(mA
)
Operation voltage VCC (V)
–40ºC
VIN=0V
00
5 10 15 20
1
2
3
4
5
Qui
esce
nt c
ircu
it cu
rren
t I C
C2
(mA
)
Operation voltage VCC (V)
150ºC
105ºC
25ºC
150ºC105ºC
25ºC
–40ºC
00
1 2 3 4
2
4
6
8
10
0
2
4
6
8
10
1
0
2
3
4
5
6
7
8
Out
put
on-
stat
e vo
ltag
e (
V)
Output current (A) Ambient temperature (ºC) Input voltage VIN (V)
–500
0 50 100 150 –50 0 50 100 150
–50 0 50 100 1500
2
4
6
8
10
0 5 10 15
1
2
3
4
5
Out
put
on-
stat
e vo
ltag
e (
V)
Gat
e d
rive
vo
ltag
e V
GL
(V)
Gat
e d
rive
vo
ltag
e V
GL
(V)
Inp
ut t
hres
hold
vo
ltag
e V
IH, V
IL (V
)
Ambient temperature (ºC) Ambient temperature (ºC)
VIN=0VVM=400V
00
100 200 300 500400
0.5
1.0
1.5
2.0
2.5
3.0
Qui
esce
nt c
ircu
it cu
rren
t I C
C2
(mA
)
High voltage VM (V)
150ºC
105ºC
25ºC
–40ºC
VIN=0VVCC=10V
00
100 200 300 500400
0.5
1.0
1.5
2.0
2.5
3.0
Qui
esce
nt c
ircu
it cu
rren
t I C
C2
(mA
)
High voltage VM (V)
VCC= 15V
12V
10V
4.5V
9V
Ta=25ºC
Ta=25ºC
00
100 200 300 500400
0.5
1.0
1.5
2.0
2.5
3.5
Gate drive voltage
Input threshold voltage
Output on-state voltage
Output on-state voltage
Gate drive voltage
3.0
Op
erat
ing
cir
cuit
curr
ent
I CC
3 (m
A)
High voltage VM (V)
VCC= 15V
12V
10V
4.5V
9V
Ta=25ºC
00
100 200 300 400 500
0.5
1.0
1.5
2.0
2.5
3.0
Op
erat
ing
cir
cuit
curr
ent
I CC
3 (m
A)
High voltage VM (V)
150ºC
105ºC
25ºC
–40ºC
VCC=VIN1(2)=10V
VCC=10V
VCC=15V
VCC= 4.5V
VCC=9V
VCC=10V
IO=2A
IO=0.4A
VIH
VIL
VCC=VIN=10V
VCC=VIN=10V
150ºC
105ºC
25ºC
–40ºC
Electrical Characteristics
65
High Voltage Full Bridge Drive ICs SLA2402M
High side switch turn-on, off High side switch turn-on, off
Low side switch turn-on, off
Low side switch turn-on, off
Power derating curve
Transient thermal resistance characteristics Safe operating area (Power MOS FET)
4 6 8 10 12 14 160
1.0
2.0
3.0
4.0
5.0
turn
-on,
off
(µs
)
Operation voltage VCC (V)
turn-on
turn-off
4 6 8 10 12 14 160
1.0
2.0
3.0
4.0
5.0
turn
-on,
off
(µs
)
Operation voltage VCC (V)
turn-on
turn-off
Ta=25ºCVM=85V, IO=0.41A
–50 0 50 100 1500
1.0
2.0
3.0
4.0
5.0
turn
-on,
off
(µs
)
Ambient temperature (ºC)
turn-on
turn-off
VM=85V, IO=0.41AVCC=10V
–50 0 50 100 1500
1.0
2.0
3.0
4.0
5.0
turn
-on,
off
(µs
)
Ambient temperature (ºC)
turn-on
–50 0 50 100 1500
2
1
3
4
5
6
Po
wer
dis
sip
atio
n (W
)
Ambient temperature (ºC)
turn-off
VM=85V, IO=0.41AVCC=10V
Ta=25ºCVM=85V, IO=0.41A
0.0001 0.001 0.01 0.1 1 10 1000.001
0.01
0.1
1
10
100
Tran
sien
t the
rmal
resi
stan
ce (
ºC/W
)
Power time (s)
Ta=25ºCSingle pulse
10 10001000.01
0.1
1
10
100
Dra
in c
urre
nt (
A)
Drain to source voltage (V)
Ta=25ºCSingle pulse
RDS (on)limited
1ms
10ms
100µs
without heatsink
66
Electrical Characteristics
High Voltage Full Bridge Drive ICs SLA2402M
67
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
Power MOS FET output leakage voltage
High-side Power MOS FEToutput on-state voltage
Power MOS FET output breakdown voltage
Delay time
BVOUT
IO=0.4A, VIN=10V
VO=500V
IO=100µA
VCC=10V, VM=400V
VCC=6 to 15V
VCC=10A, VIN=10V,
VM=85V, IO=0.41A
VCC=6 to 15V
V500
0.18 0.26
100 µA
0.34 V
4.0 mA
0.8VCC V
2.0
V
µs
0.2VCC
6 V
IOUT (off)
VOUT (on)
Lowside Power MOS FEToutput on-state voltage IO=0.4A, VGL=10V0.18 0.26 0.34 VVOUT (on)
Quiescent circuit currentVCC=6 to 15V
VCC=10V, VM=400V
3.0
4.0
mA
mA
ICC 1
ICC 2
ICC 3
VIH
VIL
td (on)
3.0 µstd (off)
–40 to +125ºC 15VCC
Input voltage (Low level)
Operating voltage
Operating circuit current
Input voltage (High level)
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Power source voltage
Input voltage
Output voltage
Output current
Power dissipation
Storage temperature
Operation temperature
VM
VIN
VO
IO
PD
Tstg
Topr
V
V
V
A
W
A
W
Tc=25ºC
Without heatsink
With infinite heatsink
ºC
ºC
500
15
500
7
IO (peak) 15
5 (Ta=25ºC)
40 (Tc=25ºC)
–40 to +125
–40 to +125
Junction temperature Tj ºC150
*
68
Features One Package Full Bridge Driver Consisted of High Voltage IC and Power MOS FETs (4 pieces) High Voltage Driver which accepts direct connection to the input signal line External components such as high voltage diodes and capacitors are not required
High Voltage Full Bridge Drive ICs SLA2403M
* Power GND (D terminal) to -HV (-HV terminal) voltage.
*
Block Diagram
* Dotted Line: Outside Connection
4
3
5
2 6 8 10 9 11 13 17
14
16
15D2
7
OUT1 OUT2
GL1 GL2
HO2
LO2
HO1
MIC
CPU
VCC
VIN1 VIN2–HV
LO1
D1MOSQ1 MOSQ2
MOSQ'1 MOSQ'2
L GND
VIN10V
0V
10%
10% 10%
10%VOUT1
td (on) td (on)
10%
10% 10%
10%
VIN1
0V
0V
VOUT2
td (on) td (on)
Highside switch turn-on, turn-off Lowside switch turn-on, turn-off
* About delay timeSignal input waveform vs output waveform
* ∆t: ∆t=td (on) – td (off)
Measurement Circuit
VIN1
VIN2
VM
VOUT1 VOUT2
VIN2
VIN1
RL
ConditionsVCC=10V, VIN=10V (pulse)VM=85VIO=0.41A (RL=207Ω)
1 2
External Dimensions (unit: mm)
31.0±0.2
4.8±0.2
1.7±0.1
24.4±0.2
16.4±0.2
16.0
±0.2
2.45±0.2
9.9±0
.2
13.0
±0.2
2.7
Ellipse 3.2±0.15•3.83.2±0.15
17• P1.68±0.1=28.56
8.5
max
31.5 max
9.5
min
Lead
pla
te th
ickn
ess
resi
ns 0
.8m
ax
0.65+0.2–0.1
+0.2–0.1
+0.2–0.1
1.0
0.55
Timing Chart
VCC
IN1
IN2
HO1
HO2
LO2
LO1
OUT2-GND
—HV0V
–400V
–100V
OSC 400HzIgnition
a: Part No.b: Lot No.
ab
PW 250µs
* When pulse signal is inputted to VlN1, RL on solid line is ON and dotted line RL is off. On the contrary, when pulse signal is inputted to VlN2, RL on dotted line is ON and dotted line RL is off.
Quiescent circuit current
Quiescent circuit current supplied high voltage
Quiescent circuit current supplied high voltage
Quiescent circuit current supplied high voltage
Operating circuit current
Operating circuit current
00
5 10 15 20
0.5
1.0
1.5
2.0
2.5
3.0
Qui
esce
nt c
ircu
it cu
rren
t I
CC
1 (m
A)
Operation voltage VCC (V)
00
5 10 15 20
1
2
3
4
5
Qui
esce
nt c
ircu
it cu
rren
t I
CC
2 (m
A)
Operation voltage VCC (V)
00
1 2 3 4
1
2
3
4
6
5
0
2
4
6
8
10
1
0
2
3
4
5
6
7
Out
put
on-
stat
e vo
ltag
e
VO
UT
(ON
) (V
)
Output current IOUT (A) Ambient temperature (ºC) Input voltage VIN (V)
–500
0 50 100 150 –50 0 50 100 150
–50 0 50 100 2001500
2
4
6
8
10
0 5 10 15
1
2
3
4
Out
put
on-
stat
e vo
ltag
e V
OU
T (O
N) (
V)
Inp
ut t
hres
hold
vo
ltag
e V
IH (V
)
Gat
e d
rive
vo
ltag
e V
GL
(V)
Inp
ut t
hres
hold
vo
ltag
e V
IL (V
)
Ambient temperature (ºC) Ambient temperature (ºC)
00
100 200 300 500400
0.5
1.0
1.5
2.0
2.5
3.0
Qui
esce
nt c
ircu
it cu
rren
t I
CC
2 (m
A)
High voltage VM (V)
00
100 200 300 500400
0.5
1.0
1.5
2.0
2.5
3.5
3.0
Qui
esce
nt c
ircu
it cu
rren
t I
CC
2 (m
A)
High voltage VM (V)
00
100 200 300 500400
0.5
1.0
1.5
2.0
2.5
4.0
3.5
Input threshold voltage
Input threshold voltage
0
2
4
6
10
8
–50 0 50 100 150
Gat
e d
rive
vo
ltag
e V
GL
(V)
Ambient temperature (ºC)
Gate drive voltage
Output on-state voltage
Output on-state voltage
Gate drive voltage
3.0
0
0.5
1.0
1.5
2.0
2.5
4.0
3.5
3.0
Op
erat
ing
cir
cuit
curr
ent
IC
C3
(mA
)
High voltage VM (V)
0 100 200 300 400 500
Op
erat
ing
cir
cuit
curr
ent
IC
C3
(mA
)
High voltage VM (V)
VIN=0V
150ºC
125ºC
25ºC
85ºC
–40ºC
VIN=0VVM=400V
150ºC
85ºC
125ºC
25ºC
–40ºC
VIN=0VVCC=10V
Ta=25ºC
Ta=25ºC
Ta=25ºC
150ºC
125ºC
25ºC
85ºC
–40ºC
VCC=VIN1(2)=10V
VCC=15V
VCC= 6V
VCC=10V
VCC=VIN=10V
VCC=VIN=10V
–40ºC
150ºC125ºC
25ºC
85ºC
VCC= 15V
12V
10V
6V
9V
VCC= 15V
10V
12V
6V
9V
IO=2A
IO=0.4A
150ºC
125ºC
85ºC
25ºC
–40ºC
VCC=10V
VCC=6V
VCC=10V
VCC=6V
VCC=10V
VCC=6V
Electrical Characteristics
69
High Voltage Full Bridge Drive ICs SLA2403M
High side switch turn-on, off High side switch turn-on, off
Low side switch turn-on, off
Low side switch turn-on, off
Power derating curve
Transient thermal resistance characteristics Safe operating area (Power MOS FET)
4 6 8 10 12 140
1.0
2.0
3.0
4.0
5.0
turn
-on,
off
(µ
s)
Operation voltage VCC (V)
4 6 8 10 12 140
1.0
2.0
3.0
4.0
5.0
turn
-on,
off
(µ
s)
Operation voltage VCC (V)
–50 0 50 100 1500
1.0
2.0
3.0
4.0
5.0
turn
-on,
off
(µ
s)
Ambient temperature (ºC)
–50 0 50 100 1500
1.0
2.0
3.0
4.0
5.0
turn
-on,
off
(µ
s)
Ambient temperature (ºC)
–50 0 50 100 1500
10
20
30
40
50
Po
wer
der
atin
g
PD
(W)
Ambient temperature (ºC)
0.001 0.01 0.1 1 10 1000.001
0.01
0.1
1
10
100
Tran
sien
t the
rmal
resi
stan
ce
(ºC
/W)
Power time (s)
10 10001000.01
0.1
1
10
100
Dra
in c
urre
nt
(A)
Drain to source voltage (V)
Ta=25ºCSingle pulse
Tc=25ºC
Ta=25ºCSingle pulse
without heatsink
turn-on
turn-off
VM=85V, IO=0.41AVCC=10V
turn-on
turn-off
VM=85V, IO=0.41AVCC=10V
turn-on
turn-off
Ta=25ºCVM=85V, IO=0.41A
turn-on
turn-off
Ta=25ºCVM=85V, IO=0.41A
1ms
10ms
100µs
10µsRDS (on)limited
70
Electrical Characteristics
High Voltage Full Bridge Drive ICs SLA2403M
71
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
IGBT output breakdown voltage
IGBT output leak current
IGBT output ON voltage
Quiescent circuit current
Operating circuit current
Input threshold voltage
Low-side IGBT gate drive voltage
Delay time*
Operating voltage
BVOUT
IOUT (off)
VOUT (on)
Icc1
Icc2
Icc3
VIH
VIL
VGL
td (on)
td (off)
td (on)
td (off)
∆td
Vcc
Io = 100µA, Tj = 25°C
Vo = 500V
Io = 0.4A, VIN (or VGL) = 10V
Io = 2.0A, VIN (or VGL) = 10V
Vcc = 10V, VM = VIN = 0V
Vcc = 10V, VM = 400V, VIN = 0V
Vcc = 10V, VM = 400V, VIN1 (or VIN2) = 10V
Vcc = 9 to 15V
Vcc = 9 to 15V
∆td = H/S td (off) - L/S td (on) or L/S td (off) - H/S td (on)
Ta = –40 to +105°C
V
µA
V
V
mA
mA
mA
V
V
V
µs
µs
µs
µs
µs
V
570
0.8•Vcc
0.8•Vcc
0.6
1.8
0.8
1.3
9
1.0
1.3
0.7
2.2
0.9
1.6
100
1.2
1.8
3.0
4.0
4.0
0.2•Vcc
16
0.8
2.6
1.0
1.9
2.5
15
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Power supply voltage
Input voltage
Operation voltage
Output voltage
Output current (DC)
Output current (pulses)
Power dissipation
Thermal resistance
Operating temperature
Storage temperature
Junction temperature
IGBT single pulse avalanche resistance
ESD protection
VM
VIN
Vcc
Vo
Io(DC)
Io(pulse)
PD
j-a
j-c
Topr
Tstg
Tj
EAS
ESD
V
V
V
V
A
A
W
°CW
°C
°C
°C
mJ
kV
Power GNG to HV
Single pulse (PW = 50µs max.)
Tc = 25°C
Tc = 25°C
VDD = 30V, L = 1mH, Unclamped, Ic = 3.2A
Human body model (C = 100pF, R = 1.5kΩ)
500
15
15
500
7
15
4
20
31.2
6.2
–40 to +105
–40 to +150
150
5
±2
72
Features One Package Full Bridge Driver Consisted of High Voltage IC and Power IGBT (4 pieces) High Voltage Driver which accepts direct connection to the input signal line
High Voltage Full Bridge Drive ICs SMA2409M
Block Diagram
Timing Chart
External Dimensions (unit: mm)
* Dotted Line: Outside Connection
(Ta = 25°C)
(Ta = 25°C)
Recommended Operation Range
High side
Low side
Parameter Symbolmin typ max
Unit ConditionsRatings
Dead time td Ta = –40 to +105°Cµs5.0
6
4 VCCD1 D2
2
OUT1 OUT2
3 5 7 9 8 10 11 13
14
12IGBT Q1 IGBT Q2
IGBT Q'1GL1
IGBT Q'2GL2
HO1 HO2
LO2LO1MIC
VIN1 VIN2–HV L GND
CPU
A Drive Example
VCCOSC250Hz
IN1
IN2
LO1
LO2
–HV–GND
OUT1–GND
OUT2–GND
0V
0V
0V
–400V–85V
–85V
–85V
–400V
–400V
Ignition
31.3±0.2
a
b
31.0±0.2 4.0±0.2
14•P2.03±0.1= (28.42)
10.2
±0.2
2.7±
0.2
(10.
4)
0.55 1.2±0.2
0.65+0.2–0.1
+0.2–0.11.16
+0.2–0.1
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
a: Part No.b: Lot No.
Vout2
VIN10V
0V
10% 10%
10%10%
VIN1
Vout1
0V
0V
10% 10%
10%10%
td(on) td(off)
VIN1VIN2
VIN1
RL
VIN2
VOUT1 VOUT2
VM = 85V, Io = 0.41AVcc = 10VVIN = 10V (Out Stage = ON)VIN = 0V (Out Stage = OFF)
Highside switch turn-on, turn-off Lowside switch turn-on, turn-off
* About delay timeSignal input waveform vs output waveform
Measurement Circuit ConditionsVCC=10V, VIN=10V (pulse)VM=85VIO=0.41A (RL=206Ω)
1 2
* When pulse signal is inputted to VlN1, RL on solid line is ON and dotted line RL is off. On the contrary, when pulse signal is inputted to VlN2, RL on dotted line is ON and dotted line RL is off.
(root dimensions) (root dimensions)
73
00
5 10 15 20
0.5
1.0
1.5
2.0
2.5
3.5
3.0
00
5 10 15 20
1
2
3
4
5
00.5
1 2 3 4
1.0
1.5
2.0
0
2
4
6
8
10
1
0
2
3
4
5
6
8
7
–500.6
0 50 100 150 –50 0 50 100 200150
–50 0 50 100 2001500
2
4
6
8
14
12
10
0 5 10 15
0.8
1.2
1.6
1.0
1.4
1.8
2.0
00
100 200 300 500400
0.5
1.0
1.5
2.0
3.0
2.5
4.0
3.5
00
100 200 300 500400
0.5
1.0
1.5
2.0
2.5
3.5
3.0
00
100 200 300 500400
0.5
1.0
1.5
2.0
2.5
3.5
0
2
4
6
14
12
10
8
–50 0 50 100 150
3.0
0
0.5
1.0
1.5
2.0
2.5
3.5
3.0
0 100 200 300 400 500
VIN=0V
150ºC
125ºC
25ºC
–40ºC
VIN=0VVM=400V
150ºC
105ºC
25ºC
–40ºC
VIN=0VVCC=10V
Ta=25ºC
Ta=25ºC
Ta=25ºC
150ºC
105ºC
25ºC
–40ºC
VCC=VIN1(2)=10V
VCC=15V
VCC=9V
VCC=VIN=10V
VCC=VIN=10V
–40ºC
150ºC
105ºC
25ºC
VCC= 15V
12V
10V
6V
4.5V
9V
VCC= 15V
10V
12V
6V
4.5V
9V
IO=2A
IO=0.4A
150ºC105ºC25ºC
–40ºC
VCC=15V
VCC=9V
VCC=15V
VCC=9V
VCC=15V
VCC=9V
Electrical Characteristics
High Voltage Full Bridge Drive ICs SMA2409M
Quiescent circuit current
Quiescent circuit current supplied high voltage
Quiescent circuit current supplied high voltage
Quiescent circuit current supplied high voltage
Operating circuit current
Operating circuit current
Qui
esce
nt c
ircu
it cu
rren
t I
CC
1 (m
A)
Operation voltage VCC (V)
Qui
esce
nt c
ircu
it cu
rren
t I
CC
2 (m
A)
Operation voltage VCC (V)
Out
put
on-
stat
e vo
ltag
e
VO
UT
(ON
) (V
)
Output current IOUT (A) Ambient temperature (ºC) Input voltage VIN (V)
Out
put
on-
stat
e vo
ltag
e V
OU
T (O
N) (
V)
Inp
ut t
hres
hold
vo
ltag
e V
IH (V
)
Gat
e d
rive
vo
ltag
e V
GL
(V)
Inp
ut t
hres
hold
vo
ltag
e V
IL (V
)
Ambient temperature (ºC) Ambient temperature (ºC)
Qui
esce
nt c
ircu
it cu
rren
t I
CC
2 (m
A)
High voltage VM (V)
Qui
esce
nt c
ircu
it cu
rren
t I
CC
2 (m
A)
High voltage VM (V)
Input threshold voltage
Input threshold voltage
Gat
e d
rive
vo
ltag
e V
GL
(V)
Ambient temperature (ºC)
Gate drive voltage
Output on-state voltage
Output on-state voltage
Gate drive voltage
Op
erat
ing
cir
cuit
curr
ent
IC
C3
(mA
)
High voltage VM (V)
Op
erat
ing
cir
cuit
curr
ent
IC
C3
(mA
)
High voltage VM (V)
7 9 11 13 150
0.5
1.0
1.5
2.0
2.5
3.0
7 9 11 13 150
0.5
1.0
1.5
2.0
–50 0 50 100 1500
0.5
1.0
1.5
2.5
2.0
3.5
3.0
–50 0 50 100 1500
0.5
1.0
1.5
2.0
2.5
–50 0 50 100 1500
1
2
3
4
5
0.001 0.01 0.1 1 10 1000.01
0.1
1
10
100
10 10001000.1
1
10
100
Col
lect
or c
urre
nt
(A)
Ta = 25°CSingle pulse
without heatsink
t d (on)
t d (off)
t d (on)
t d (off)
t d (on)
t d (off)
1ms
10ms
100µs
74
Electrical Characteristics
t d (on)
t d (off)
High Voltage Full Bridge Drive ICs SMA2409M
High side switch turn-on, off High side switch turn-on, off
Low side switch turn-on, off
Low side switch turn-on, off
Power derating curve
Transient thermal resistance characteristics IGBT ASO characteristics
turn
-on,
off
(µ
s)
Operation voltage VCC (V)
turn
-on,
off
(µ
s)
Operation voltage VCC (V)
turn
-on,
off
(µ
s)
Ambient temperature (ºC)
turn
-on,
off
(µ
s)
Ambient temperature (ºC)
Po
wer
der
atin
g
PD
(W)
Ambient temperature (ºC)
Tran
sien
t the
rmal
resi
stan
ce
(ºC
/W)
Power time (s) Collector-emitter voltage (V)
75
Custom ICs
76
Various processing technologies of BIP, BiCMOS, CMOS and BCD can be used for the semiconductor chips.
Meets detailed user needs, especially power ICs. A wide range of general-purpose ICs is also available.
Employs a monolithic chip with flip-chip construction for increased reliability making it ideal for car electronic
devices.
Also available in hybrid ICs with transfer mold construction, multi-chip IC configuration and power monolithic
IC configuration.
Features
All semiconductor chips used are
manufactured by Sanken.
Main product lineup consists of
power ICs produced out of many
years' experience of Sanken.
Uses monolithic chips with flip-chip
construction.
Mainly available in miniature
transfer-mold packages.
Examples of Custom Hybrid IC Products Regulators for alternators
Igniters
Power supply for microcomputer
system
Power steering control IC
Motor and actuator driver
Others
Lead frame type multi-chip power IC
One-chip power IC
Surface-mount power IC
Lead frame type power hybrid IC with ceramic substrate
High-output high-breakdown voltage IC Simplified integration of custom circuits Distribution of unit functions (Actuators may be built in the device)
Examples of Sanken Automotive Hybrid ICs
External Dimensions (unit: mm)
77
STA 10pin
25.25
9.0
4.0
31.0
10.2
4.0 4.031.0
10.2
SMA15pinSMA12pin
3GR-F 3GR-M STR-S
SLA12pin
SPM SMD16pin SPF16pin
SPF24pinSPF20pin
SLA15pin
SLA18pin
15.6
23
5.5 19.8 5.5
23
24.2 5.5
23
31.0 4.8
16
31.0 4.816
.0
35
16.1
4.8
20.0
9.8
6.8
16
Pin 1 8
9
4.0
12.05
7.5
10.5
2.5
16 15 14 13 12 11 10 9
1 2 3 4 5 6 7 8
17.28
2.5
7.5
10.6
24
1 12
13
31.0 4.8
16.0
MT-100 FM205
5.0 10.0
16.9
4.215.6
19.9
20.2 4.0
9.0
STA 8pin
1.0
10.5
±0.3
+0.1–0.05
0.25+0.15–0.05
2.5±0
.2
14.74±0.2
7.5±0
.2
2±0.2
13.04±0.2
1.27±0.25
20
1 10
11
0.4+0.15–0.05
Fin thickness
Custom ICs
78
79
2-2. MOS FETs 2-2-1. MOS FETs ......................................... 108
2SK3710 (60V/70A/6mΩ, Surface-mount) ... 108
2SK3711 (60V/70A/6mΩ) .............................. 109
2SK3724 (60V/80A/5mΩ, Surface-mount) ... 110
2SK3800 (40V/70A/6mΩ, Surface-mount) .. 111
2SK3801 (40V/70A/6mΩ) .............................. 112
2SK3803 (40V/85A/3mΩ, Surface-mount) ... 113
2SK3851 (60V/85A/4.7mΩ) .......................... 114
FKV460S (40V/60A/9mΩ, Surface-mount) ... 115
FKV660S (60V/60A/14mΩ, Surface-mount) 116
2-2-2. MOS FET Arrays ........................... 117
SDK06 (52±5V/3A/0.25Ω, Surface-mount 4-circuits) 117
SDK08 (50V/4.5A/0.08Ω, Surface-mount 4-circuits) 118
SDK09 (12V/6A/0.2Ω, Surface-mount 4-circuits) 119
SLA5027 (60V/12A/0.08Ω, 4-circuits) .......... 120
SLA5098 (40V/20A/0.017Ω, 6-circuits) ....... 121
SMA5113 (450V/7A/1.1Ω, 4-circuits) .......... 122
STA508A (120V/6A/0.2Ω, 4-circuits) ........... 123
STA509A (52±5V/3A/0.25Ω, 4-circuits) ....... 124
2-3 Thyristors 2-3-1. Reverse Conducting Thyristors .. 125
TFC561D (600V, 430A, 1200A/µs) .............. 125
TFC562D (600V, 600A, 1600A/µs) .............. 126
2-4. Diodes 2-4-1. Alternator Diodes .......................... 127
2-4-2. High-voltage Diodes for Igniter .. 128
2-4-3. Power Zener Diodes ................... 129
2-4-4. General-purpose Diodes .......... 130
2 Discretes
2-1. Transistors 2-1-1. Transistors ......................................... 80
2SA1488/1488A (–60V/–4A, –80V/–4A) ...... 80
2SA1567 (–50V/–12A) .................................... 81
2SA1568 (–60V/ 12A) .................................... 82
2SA1908 (–120V/–8A) ..................................... 83
2SB1622 (–200V/–15A) ................................... 84
2SC3852 (60V/3A) ........................................... 85
2SC4024 (50V/10A) ........................................ 86
2SC4065 (60V/±12A) ...................................... 87
2SC4153 (120V/7A) ........................................ 88
2SD2141 (380±50V/6A) .................................. 89
2SD2382 (60±5V/±6A) .................................... 90
2SD2633 (150V/8A) ........................................ 91
FP812 (–100V/–8A) ........................................... 92
MN611S (115±10V/±6A) ................................. 93
MN638S (380±50V/6A) ................................... 94
SSD103 (65±5V/±6A, Surface-mount) ........... 95
2-1-2. Transistor Arrays ............................ 96
SDA03 (–60V/–6A, Surface-mount 4-circuits) 96
SDA04 (–60V/–6A, Surface-mount 2-circuits) 97
SDC09 (65±5V/6A, Surface-mount 2-circuits) 98
SLA8004 (60V/12A, –55V/–12A, H-bridge) ......... 99
SPF0001 (115±10V/±6A, Surface-mount 2-circuits) 100
STA315A (35±5V/2A, 3-circuits) .................. 101
STA335A (35±5V/3A, 2-circuits) .................. 102
STA415A (35±5V/2A, 4-circuits) .................. 103
STA460C (60±10V/±6A, 2-circuits) .............. 104
STA461C (65±5V/±6A, 2-circuits) ................ 105
STA463C (115±10V/±6A, 2-circuits) ............ 106
STA464C (65±5V/6A, 4-circuits) .................. 107
±
Absolute Maximum Ratings Electrical Characteristics
Typical Switching Characteristics (common emitter)
SymbolRatings
Unit
(Ta=25ºC) (Ta = 25ºC)
VCBO –602SA1488 2SA1488A
Symbol Test ConditionsRatings
Unit
ICBO
–12
VCC(V)
6
RL(Ω)
–2
IC(A)
–10
VBB1(V)
5
VBB2(V)
–200
IB1(mA)
200
IB2(mA)
0.25typ
ton(µs)
0.75typ
tstg(µs)
0.25typ
t f(µs)
µAVCB = –80–60
–100max–100max2SA1488A2SA1488
IEBO µAVEB = –6V –100max
V(BR) CEO V
V
IC = –25mA –60min –80minhFE VCE = –4V, IC = –1A 40min
VCE (sat) VIC = –2A, IB = –0.2A –0.5max fT MHzVCE = –12V, IE = –0.2A 15typ
COB pFVCB = –10V, f = 1MHz 90typ
VCEO VV
–60–80–80
VEBO V–6IC A–4IB A–1PC W25 (Tc = 25ºC)Tj ºC150Tstg ºC–55 to +150
IC—VCE Characteristics (typ.)
PC—Ta Derating
IC—VBE Temperature Characteristics (typ.)
hFE—IC Characteristics (typ.) hFE—IC Temperature Characteristics (typ.)
fT—IE Characteristics (typ.)
j-a—t Characteristics
Safe Operating Area (single pulse)
VCE (sat)—IB Characteristics (typ.)
Power Transistor 2SA1488/1488A
80
–30mA
–40mA
–50mA–60mA
–20mA
–10mA
IB = –5mA
–80m
A
0.7
1
5
30
20
10
200 25 50 75 100 125 150
With infinite heatsink
Without heatsink
10 50 1003 5
–1
–0.5
–0.05
–0.1
–10
–5
Without heatsinknatural air cooling
20
50
100
500
Typ
1ms10ms
100ms
DC
150 • 150 • 2100 • 100 • 250 • 50 • 2
20
50
100
200125ºC
25ºC
–30ºC
0.005 0.01 0.05 0.50.1 1 30
10
20
30
60
50
40 Typ
00
–4
–3
–2
–1
–6 –0.01 –0.05 –0.1 –0.5 –1–5–4–3–2–1
VCE (V)
I C (A
)
–0.5
–1.0
–1.5
0
IB (A)
VC
E (s
at) (
V)
–1A–2A
IC = –3A
0
–1
–2
–3
–4
0 –0.5 –1.0 –1.5
VBE (V)
I C (A
)
(VCE = –4V)
12
5ºC
(C
ase
te
mp
era
ture
)
25
ºC (
Ca
se
te
mp
era
ture
)–3
0ºC
(C
as
e t
em
pe
ratu
re)
1 10 100 1000
t (ms)
j-a
(ºC
/W)
(VCE = –4V)(VCE = –4V)
–0.02–0.01 –0.1 –0.5 –1 –4 –0.1 –1 –4
IC (A)IC (A)
h FE
h FE
f T (M
Hz)
(VCE = –12V)
IE (A) VCE (V)
I C (A
)
Ta (ºC)
PC
(W)
natural air coolingSilicone grease
Aluminum heatsinkUnit: mm
a) Part No.b) Lot No.(Unit: mm)
External Dimensions TO220F (full-mold)
B C E
C0.5
16.9
(13.
5)8.
40.
83.
94
10.0
2.6
4.2
2.8
1.351.350.85
2.54 2.54 0.45
3.3
2.2
ab
Symbol Ratings Unit
(Ta = 25ºC) (Ta=25ºC)
VCBO –50Symbol Test Conditions Ratings Unit
ICBO
–24
VCC(V)
4
RL(Ω)
–6
IC(A)
–10
VBB1(V)
5
VBB2(V)
–120
IB1(mA)
120
IB2(mA)
0.4typ
ton(µs)
0.4typ
tstg(µs)
0.2typ
t f(µs)
µAVCB = –50V –100max IEBO µAVEB = –6V –100max
V(BR) CEO VIC = –25mA –50minhFE VCE = –1V, IC = –6A 50min
VCE (sat) VIC = –6A, IB = –0.3A –0.35max fT MHzVCE = –12V, IE = –0.5A 40typ
COB pFVCB = –10V, f = 1MHz 330typ
VCEO VV
–50VEBO V –6IC A–12IB A –3PC W35 (Tc = 25ºC)Tj ºC150Tstg ºC–55 to +150
Absolute Maximum Ratings Electrical Characteristics
Typical Switching Characteristics (common emitter)
IC—VCE Characteristics (typ.)
PC—Ta Derating
IC—VBE Temperature Characteristics (typ.)
hFE—IC Characteristics (typ.) hFE—IC Temperature Characteristics (typ.)
fT—IE Characteristics (typ.)
j-a—t Characteristics
Safe Operating Area (single pulse)
VCE (sat)—IB Characteristics (typ.)
Power Transistor 2SA1567
81
00
–8
–4
–12
–6
–2
–10
–2–1 –3 –4 –5 –6VCE (V)
I C (A
)
–40mA
–60mA
–100mA–150mA
–20mA
–10mA
–5mA
–200
mA
–10 –50 –100–3 –5
–1
–0.5
–0.05
–0.1
–30
–10
–5
VCE (V)
I C (A
)
Without heatsinknatural air cooling
0
–1.5
–1.0
–0.5
–2 –100–10 –1000 –3000
IB (mA)
VC
E(s
at) (
V)
–0.02 –0.1 –1 –1030
50
100
500
IC (A)
h FE
(VCE = –1V)
Typ
1ms10m
s100msDC
0.3
0.5
4
1
1 10 100 1000
t (ms)
j-a
(ºC
/W)
0.05 0.1 1 120
20
30
40
50
f T (M
Hz)
(VCE = –12V)
IE (A)
Typ
0
–12
–6
–8
–10
–4
–2
0 –1.2–0.4–0.2 –0.6 –0.8 –1.0
VBE (V)
I C (A
)
(VCE = –4V)
12
5ºC
(C
ase
te
mp
era
ture
)2
5ºC
(C
as
e t
em
pe
ratu
re)
–30
ºC (
Ca
se
te
mp
era
ture
)(VCE = –1V)
–0.02 –0.1 –1 –1030
50
100
500
IC (A)
h FE
125ºC
25ºC
–30ºC
35
30
20
10
200 25 50 75 100 125 150
Ta (ºC)
PC
(W)
With infinite heatsink
Without heatsink
50 • 50 • 2
100 • 100 • 2
150 • 150 • 2
–1A–3A
–6A–9A
IC = –12A
IB =
natural air coolingSilicone grease
Aluminum heatsinkUnit: mm
External Dimensions TO220F (full-mold)
a) Part No.b) Lot No.(Unit: mm)B C E
C0.5
16.9
(13.
5)8.
40.
83.
94
10.0
2.2
2.6
4.2
2.8
1.351.350.85
2.54 2.54 0.45
3.3
ab
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VCBO –60Symbol Test Conditions Ratings Unit
ICBO
–24
VCC(V)
4
RL(Ω)
–6
IC(A)
–10
VBB1(V)
5
VBB2(V)
–120
IB1(mA)
120
IB2(mA)
0.4typ
ton(µs)
0.4typ
tstg(µs)
0.2typ
t f(µs)
µAVCB = –60V –100maxIEBO mAVEB = –6V –60max
V(BR) CEO VIC = –25mA –60minhFE VCE = –1V, IC = –6A 50min
VCE (sat) VV
IC = –6A, IB = –0.3A –0.35maxVFEC IECO = –10A –2.5maxfT MHzVCE = –12V, IE = 0.5A 40typ
COB pFVCB = –10V, f = 1MHz 330typ
VCEO VV
–60VEBO V–6IC AIB A–3PC W35 (Tc=25ºC)Tj ºC150Tstg ºC–55 to +150
12±
Absolute Maximum Ratings Electrical Characteristics
Typical Switching Characteristics (common emitter)
IC — VCE Characteristics (typ.)
PC — Ta Derating
IC — VBE Temperature Characteristics (typ.)
hFE — IC Characteristics (typ.) hFE — IC Temperature Characteristics (typ.)
fT — IE Characteristics (typ.)
j-a — t Characteristics
Safe Operating Area (single pulse)
VCE (sat) — IB Characteristics (typ.)
Power Transistor 2SA1568
82
00
–8
–4
–12
–6
–2
–10
–2–1 –3 –4 –5 –6
–40mA
–60mA
–100mA–150mA
–20mA
–10mA
IB=
–200
mA
–10 –50 –100–3 –5
–1
–0.5
–0.05
–0.1
–30
–10
–5
Without heatsinknatural air cooling
0
–1.4
–1.0
–0.5
–7 –100–10 –1000 –3000
–0.02 –0.1 –1–12
–102
10
300
100
Typ
–0.02 –0.1 –1–12
–102
10
300
100
1ms10m
s100msDC
0.3
0.5
4
1
1 10 100 1000
0.05 0.1 1 100
20
30
50
40Typ
35
30
20
10
20
0 25 50 75 100 125 150
With infinite heatsink
Without heatsink
50 • 50 • 2100 • 100 • 2
150 • 150 • 2
0
–12
–6
–8
–10
–4
–2
0 –1.2–0.4–0.2 –0.6 –0.8 –1.0
125ºC 25ºC–30ºC
VCE (V)
I C (A
)
IB (mA)
VC
E (s
at)
(V)
–1A
–3A–6A
–9AIC = –12A
VBE (V)
I C (A
)
(VCE = –1V)
12
5ºC
(C
ase
te
mp
era
ture
)2
5ºC
(C
as
e t
em
pe
ratu
re)
–30
ºC (
Ca
se
te
mp
era
ture
)
t (ms)
j-a
(ºC
/W)
(VCE = –1V)
IC (A)
h FE
IC (A)
h FE
(VCE = –1V)
f T (M
Hz)
(VCE = –12V)
IE (A) VCE (V)
I C (A
)
Ta (ºC)
PC
(W)
natural air coolingSilicone grease
Aluminum heatsinkUnit: mm
a) Part No.b) Lot No.
(Unit : mm)
External Dimensions TO220F (full-mold)
B C E
C0.5
16.9
(13.
5)8.
40.
83.
94
10.0
2.2
2.6
4.2
2.8
1.351.350.85
2.54 2.54 0.45
3.3
ab
83
IC — VCE Characteristics (typ.)
PC — Ta Derating
IC — VBE Temperature Characteristics (typ.)
hFE — IC Characteristics (typ.) hFE — IC Temperature Characteristics (typ.)
fT — IE Characteristics (typ.)
j-a — t Characteristics
Safe Operating Area (single pulse)
VCE (sat) — IB Characteristics (typ.)
VCE (V)
I C (
A)
IB (mA)
VC
E(s
at)
(V)
VBE (V)
I C (A
)
t (ms)IC (A)
h FE
IC (A)
h FE
f T (
MH
z)
IE (A) VCE (V)
I C (
A)
Ta (ºC)
PC
(W
)
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VCBO –120Symbol Test Conditions Ratings Unit
ICBO
–40
VCC(V)
10
RL(Ω)
–4
IC(A)
–10
VBB1(V)
5
VBB2(V)
–400
IB1(mA)
400
IB2(mA)
0.14typ
ton(µs)
1.40typ
tstg(µs)
0.21typ
t f(µs)
µAVCB = –120V –10maxIEBO µAVEB = –6V –10maxV(BR) CEO VIC = –50mA –120min hFE* VCE = –4V, IC = –3A 50minVCE (sat) VIC = –3A, IB = –0.3A –0.5maxfT MHzVCE = –12V, IE = 0.5A 20typ
COB pFVCB = –10V, f = 1MHz 300typ
VCEO VV
–120VEBO V–6
–8IC AIB A–3PC W75 (Tc=25ºC)Tj ºC150Tstg ºC–55 to +150
Absolute Maximum Ratings Electrical Characteristics
Typical Switching Characteristics (common emitter)
Power Transistor 2SA1908
External Dimensions FM100 (T03PF)
4.41.5 1.5
B EC
5.45±0.1 5.45±0.1
3.3±0.2
1.6
3.3
1.75
0.8
±0.2
2.15
1.05
23.0
±0.3
16.2
9.5±
0.2
5.5
15.6±0.2 5.5±0.2
3.45±0.2
3.350.65 +0.2–0.1
+0.2–0.1
3.0
0.8
ab
00
–2
–4
–6
–8
–1 –2 –3 –4
–350
mA
–200mA
–150mA
–25mA
–100mA
–75mA
–50mA
IB=–10mA
0
–3
–2
–1
0 –0.2 –0.4 –0.6 –0.8 –1.0
IC= –8A
–4A–2A
0
–8
–6
–2
–4
0 –1.5–1.0–0.5
(VCE = –4V)
–0.02 –0.1 –0.5 –1 –8–530
50
100
200(VCE = –4V)
Typ
0.02 0.10.05 0.5 1 5 80
20
10
30(VCE = –12V)
Typ
0.2
0.5
4
1
1 10 100 1000 2000
80
60
40
20
3.50
0 5025 75 125100 150
(VCE = –4V)
–0.02 –0.1 –0.5 –1 –5 –830
50
100
300
125ºC
25ºC
–30ºC
DC100ms
10ms
–10–5 –50 –100 –150–0.1
–1
–0.5
–10
–20
–5
a) Part No.b) Lot No.
(Unit : mm)
With inf inite heatsink
Without heatsink
Without heatsinknatural air cool ing
j-a
(º
C/W
)
12
5ºC
(C
ase
te
mp
era
ture
)2
5ºC
(C
as
e t
em
pe
ratu
re)
–30
ºC (
Ca
se
te
mp
era
ture
)
*Rank: O (50 to 100), P(70 to 140), Y(90 to 180)
Symbol Ratings Unit
(Ta=25ºC)
VCBO –200VCEO V
V–200
VEBO V –5IC AIB A –1PC W85 (Tc=25ºC)Tj ºC150Tstg ºC–55 to +150
–15
Absolute Maximum Ratings
Power Transistor 2SB1622
70
a) Part No.b) Lot No.
(Unit : mm)
External DimensionsElectrical Characteristics (Ta=25ºC)
Symbol Test ConditionsRatings
Unit
ICBO µAVCB = –200Vmin
IEBO µAVEB = –5V
VCEO VIC = –30mAhFE* VCE = –4V, IC = –10A
–200
VCE(sat) VIC = –10A, IB = –10mA5000
VBE(sat) VIC = –10A, IB = –10mAfT MHzVCE = –12V, IE = 2ACOB pFVCB = –10V, f = 1MHz
typ
60270
–100
max
–100
–2.530000
–3.0
–40
VCC(V)
4
RL(Ω)
–10
IC(A)
–10
VBB1(V)
5
VBB2(V)
–10
IB1(mA)
10
IB2(mA)
0.4typ
ton(µs)
3.6typ
tstg(µs)
1.0typ
tf(µs)
Typical Switching Characteristics
*Rank: O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
IC — VCE Characteristics (typ.) VCE (sat) — IB Characteristics (typ.) VCE (sat) — IB Temperature Characteristics (typ.)
VCE (sat) — IB Temperature Characteristics (typ.) IC — VBE Temperature Characteristics (typ.) hFE — IC Characteristics (typ.)
hFE — IC Temperature Characteristics (typ.) ton•tstg•tf — IC Characteristics (typ.) j-a — t Characteristics
fT — IE Characteristics (typ.) Safe Operating Area PC — Ta Derating
0
5
I C (A
)
15
10
0 –2 –4 –6
VCE (V)
VC
E(s
at) (
V) –2
–1
0
–3
–10–1–0.2 –100 –200
IB (mA)
5
0
I C (A
)
10
15
5000
1000
h FE
100000
50000
10000
–1 –2 –3
VBE (V)
–1–0.5–0.2 –5 –10 –20
IC (A)
5000
1000
h FE
100000
50000
10000
–1–0.5–0.2 –5 –10 –20
IC (A)
0.5
0.1
1.0
3.0
1 10 100 1000 2000
t (sec)
0.5
t on
•t s
tg•t f
(µse
c)
1
5
0.1
10
–0.2 –5 –10 –20–1–0.5
IC (A)
VC
E(s
at) (
V)
–3
–2
–1
0–0.2 –1 –10 –100 –200
IB (mA)
20
0
f T (M
Hz)
80
60
40
0.02 0.1 0.5 1 5 10
IE (A)
–0.5
–1
–0.05
–0.1
I C (A
)
–10
–50–30
–5
–3 –10 –100 –500
VCE (V)
30
PC (W
)
90
80
70
60
50
40
20
10
00 25 50 75 125 150100
Ta (ºC)
–2
–1
0
VC
E(s
at) (
V)
–3
–0.1 –1 –10 –100 –200
IB (mA)
IB= –0.3mA
–0.5mA
–0.8mA
–1.0mA–1.5mA–50mA
–15mA–5.0mA –3
.0m
A
Ta = 25ºCVCC = –40V–IB1 = IB2 = 10mA
ton
tf
tstg
With infinite heatsink
VCE = –4V
typ
VCE = –4V150ºC125ºC100ºC75ºC
50ºC25ºC0ºC
–30ºC–55ºC
(VCE = – 4V)
Ta=150ºC125ºC100ºC
75ºC50ºC25ºC
0ºC–30ºC–55ºC
IC = –10A
IC = –5A
IC = –5A
IC = –15A
125ºC75ºC25ºC
–30ºC
IC = –10A
125ºC75ºC25ºC
–30ºC
Ta =25ºC(single pulse)
10ms100msD.C.
Without heatsink
84
ab
Without heatsinknatural air cooling
j-a
(ºC
/W)
3.3±0.25.5±0.2
3.45±0.2
5.5
±0.2
9.5
±0.2
23.0
±0.3
0.8
3.0
0.8
1.6
3.3
16.21.75±0.15
2.15±0.15
5.45±0.15.45±0.13.35±0.2
15.6±0.2
1.5
B C E
1.54.4
1.05 –0.1+0.2
0.65–0.1+0.2
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VCBO 80Symbol Test Conditions Ratings Unit
20
VCC(V)
20
RL(Ω)
1.0
IC(A)
10
VBB1(V)
–5
VBB2(V)
15
IB1(mA)
–30
IB2(mA)
0.8typ
ton(µs)
3.0typ
tstg(µs)
1.2typ
t f(µs)
µA 10maxIEBO µAVEB = 6VICBO VCB = 80V
100max
V(BR) CEO VIC = 25mA 60minhFE VCE = 4V, IC = 0.5A 500min
VCE (sat) VIC = 2A, IB = 50mA 0.5maxfT MHzVCE = 12V, IE = –0.2A 15typ
COB pFVCB = 10V, f = 1MHz 50typ
VCEO VV
60VEBO V 6IC A 3IB A 1PC W25 (Tc=25ºC)Tj ºC150 Tstg ºC–55 to +150
Absolute Maximum Ratings Electrical Characteristics
Typical Switching Characteristics (common emitter)
IC — VCE Characteristics (typ.)
PC — Ta Derating
IC — VBE Temperature Characteristics (typ.)
hFE — IC Characteristics (typ.) hFE — IC Temperature Characteristics (typ.)
fT — IE Characteristics (typ.)
j-a — t Characteristics
Safe Operating Area (single pulse)
VCE (sat) — IB Characteristics (typ.)
Power Transistor 2SC3852
85
00
1
2
3
21 3 4 5 6
IB=12mA
0.5mA
1mA
2mA
3mA
5mA
8mA
0.01 0.1 0.5 1 3100
500
2000
1000
(VCE=4V)
Typ
0.01 0.1 0.5 1 3100
500
2000
1000
0.5
1
5
1 10 100 1000
VCB = 10VIE = –2A
10 503 5 1000.05
0.1
1
0.5
10
5
Without heatsinknatural air cooling
DC
100ms
10ms
1ms
0
1.0
1.5
0.5
0.001 0.005 0.01 0.10.05 10.5
2A3A
0
2
3
1
0 1.11.00.5
25ºC
–30ºC
125ºC
–0.005 –0.01 –0.1 –0.5–0.05 –2–1
20
10
0
30
Typ
30
20
10
00 50 100 150
With infinite heatsink
Without heatsink
VCE (V)
I C (
A)
IB (A)
VC
E(s
at)
(V)
IC=1A
VBE (V)
I C (
A)
(VCE = 4V)
12
5ºC
(C
ase
te
mp
era
ture
)2
5ºC
(C
as
e t
em
pe
ratu
re)
–30
ºC (
Ca
se
te
mp
era
ture
)
t (ms)
j-a
(ºC
/W)
(VCE =4V)
IC (A)IC (A)
h FE
h FE
f T (
MH
z)
(VCE = 12V)
IE (A) VCE (V)
I C (
A)
Ta (ºC)
PC
(W
)
a) Part No.b) Lot No.
(Unit : mm)
External Dimensions TO220F (full-mold)
B C E
C0.5
16.9
(13.
5)8.
40.
83.
94
10.0
2.2
2.6
4.2
2.8
1.351.350.85
2.54 2.54 0.45
3.3
ab
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VCBO 100Symbol Test Conditions Ratings Unit
ICBO
20
VCC(V)
4
RL(Ω)
5
IC(A)
0.1
IB1(A)
–0.1
IB2(A)
0.5typ
ton(µs)
2.0typ
tstg(µs)
0.5typ
tf(µs)
µAµA
VCB = 100V 10maxIEBO VEB = 15V 10max
V(BR) CEO VIC = 25mA 50minhFE VCE = 4V, IC = 1A 300 to 1600
VCE (sat) VIC = 5A, IB = 0.1A 0.5maxfT MHzVCB = 12V, IE = –0.5A 24typ
COB pFVCB = 10V, f = 1MHz 150typ
VCEO VV
50VEBO V15IC AIB A3PC W35 (Tc=25ºC)Tj ºC150Tstg ºC–55 to +150
10
Absolute Maximum Ratings Electrical Characteristics
Typical Switching Characteristics (common emitter)
IC — VCE Characteristics (typ.)
PC — Ta Derating
IC — VBE Temperature Characteristics (typ.)
hFE — IC Characteristics (typ.) hFE — IC Temperature Characteristics (typ.)
fT — IE Characteristics (typ.)
j-a — t Characteristics
Safe Operating Area (single pulse)
VCE (sat) — IB Characteristics (typ.)
Power Transistor 2SC4024
00
4
2
6
10
8
2 4 6
IB = 35mA
5mA
25mA30mA
10mA
15mA
20mA
0
1.0
1.5
0.5
0.002 0.01 0.1 21
0.02 0.1 0.5 51 10100
500
1000
Typ
0.02 0.1 0.5 51 10100
500
1000
10A
0.3
0.5
1
4
1 10 100 1000
10 503 5 1000.2
1
0.5
30
10
5
Without heatsinknatural air cooling
DC
100ms
10ms
1ms
40
30
20
10
20
0 25 50 75 100 125 150
With infinite heatsink
Without heatsink
50 • 50 • 2 100 • 100 • 2
0
10
2
4
8
6
0 1.21.00.5
25ºC
–30ºC
125ºC
–0.05 –0.1 –1–0.5 –5 –10
20
10
0
30
Typ
VCE (V)
I C (
A)
IB (A)
VC
E (s
at)
(V)
IC = 1A3A
5A
VBE (V)
I C (
A)
(VCE = 4V)
12
5ºC
(C
ase
te
mp
era
ture
)
25
ºC (
Ca
se t
em
pe
ratu
re)
–30
ºC (
Ca
se
te
mp
era
ture
)
t (ms)
j-
a (º
C/W
)
(VCE = 4V)(VCE = 4V)
IC (A)IC (A)
h FE
h FE
f T (
MH
z)
(VCE = 12V)
IE (A) VCE (V)
I C (
A)
Ta (ºC)
PC
(W
)
150 • 150 • 2
natural air coolingSilicone grease
Aluminum heatsinkUnit: mm
a) Part No.b) Lot No.
(Unit: mm)
External Dimensions TO220F (full-mold)
B C E
C0.5
16.9
(13.
5)8.
40.
83.
94
10.0
2.2
2.6
4.2
2.8
1.351.350.85
2.54 2.54 0.45
3.3
ab
86
87
Absolute Maximum Ratings Electrical Characteristics
Typical Switching Characteristics (common emitter)
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VCBO 60Symbol Test Conditions Ratings Unit
ICBO
24
VCC(V)
4
RL(Ω)
6
IC(A)
10
VBB1(V)
–5
VBB2(V)
0.12
IB1(A)
–0.12
IB2(A)
0.6typ
ton(µs)
1.4typ
tstg(µs)
0.4typ
tf(µs)
µAVCB = 60V 100maxIEBO mAVEB = 6V 60max
V(BR) CEO VIC = 25mA 60minhFE VCE = 1V, IC = 6A 50min
VCE (sat) VV
IC = 6A, IB = 1.3A 0.35maxVFEC VECO = 10A 2.5maxfT MHzVCE = 12V, IE = –0.5A 24typ
COB pFVCB = 10V, f = 1MHz 180typ
VCEO VV
60VEBO V6IC AIB A3PC W35 (Tc=25ºC)Tj ºC150Tstg ºC–55 to +150
±12
IC — VCE Characteristics (typ.)
PC — Ta Derating
IC — VBE Temperature Characteristics (typ.)
hFE — IC Characteristics (typ.) hFE — IC Temperature Characteristics (typ.)
fT — IE Characteristics (typ.)
j-a — t Characteristics
Safe Operating Area (single pulse)
VCE (sat) — IB Characteristics (typ.)
Power Transistor 2SC4065
00
4
2
8
6
12
10
2 4 6
200m
A
IB = 10mA
20mA
40mA
60mA
100mA150mA
0
1.0
1.3
0.5
0.005 0.01 0.1 31
IC = 1A
12A
3A6A
9A
0.02 0.1 1 10 1235
50
10
100
400Typ
0.02 0.1 1 101235
50
10
100
400
0.2
0.5
1
5
1 10 100 1000
10 503 5 1000.05
0.1
1
0.5
30
10
5
Without heatsinknatural air cooling
DC
100ms
10ms
1ms
40
30
20
10
20
0 25 50 75 100 125 150
With infinite heatsink
Without heatsink
50 • 50 • 2 100 • 100 • 2
0
12
10
2
4
8
6
0 1.11.00.5
25ºC
–30ºC
125ºC
–0.05 –0.1 –1–0.5 –5 –12–10
20
10
0
30
Typ
VCE (V)
I C (
A)
IB (A)
VC
E (s
at)
(V)
VBE (V)
I C (
A)
(VCE = 1V)
25
ºC (
Ca
se
te
mp
era
ture
)
12
5ºC
(C
ase
te
mp
era
ture
)
–30
ºC (
Ca
se
te
mp
era
ture
)
t (ms)
j-a
(ºC
/W)
(VCE = 1V)(VCE = 1V)
IC (A)IC (A)
h FE
h FE
f T (
MH
z)
(VCE = 12V)
IE (A) VCE (V)
I C (
A)
natural air coolingSilicone grease
Aluminum heatsinkUnit: mm
Ta (ºC)
PC
(W
)
150 • 150 • 2
a) Part No.b) Lot No.
(Unit: mm)
External Dimensions TO220F (full-mold)
B C E
C0.5
16.9
(13.
5)8.
40.
83.
94
10.0
2.2
2.6
4.2
2.8
1.351.350.85
2.54 2.54 0.45
3.3
ab
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VCBO 200Symbol Test Conditions Ratings Unit
ICBO
50
VCC(V)
16.7
RL(Ω)
3
IC(A)
10
VBB1(V)
–5
VBB2(V)
0.3
IB1(A)
–0.6
IB2(A)
0.5max
ton(µs)
3max
tstg(µs)
0.5max
t f(µs)
µAVCB = 200V 100maxIEBO µAVEB = 8V 100max
V(BR) CEO VIC = 50mA 120minhFE VCE = 4V, IC = 3A 70 to 220
VCE (sat) VV
IC = 3A, IB = 0.3A 0.5maxVBE (sat) IC = 3A, IB = 0.3A 1.2maxfT MHzVCE = 12V, IE = –0.5A 30typCOB pFVCB = 10V, f = 1MHz 110typ
VCEO VV
120VEBO V8IC AIB A3PC W30 (Tc=25ºC)Tj ºC150Tstg ºC–55 to +150
7 (pulse 14)
Absolute Maximum Ratings Electrical Characteristics
Typical Switching Characteristics (common emitter)
IC — VCE Characteristics (typ.)
PC — Ta Derating
IC — VBE Temperature Characteristics (typ.)
hFE — IC Characteristics (typ.) hFE — IC Temperature Characteristics (typ.)
fT — IE Characteristics (typ.) Safe Operating Area (single pulse)
VCE (sat) — IB Characteristics (typ.)
Power Transistor 2SC4153
00
3
4
2
1
5
7
5
21 3 4
200mA
150mA
100mA
IB=10mA
20mA
40mA60mA
0
2
3
1
0.005 0.01 0.1 21
IC = 1A3A 5A
0.01 0.1 0.5 1 7520
50
100
300(VCE = 4V)
Typ
0.01 0.1 0.5 1 7520
50
100
300
0.2
0.5
1
5
1 10 100 1000
–0.01 –0.1 –1 –50
10
20
40
30
Typ
10 100505 2000.05
1
0.5
0.1
20
10
5
Without heatsinknatural air cooling
100µs
10ms
30
20
10
20
0 25 50 75 100 125 150
With infinite heatsink
Without heatsink
0
7
2
3
4
5
6
1
0 1.11.00.5
25ºC
–30ºC
125ºC
VCE (V)
I C (
A)
IB (A)
VC
E (s
at)
(V)
VBE (V)
I C (
A)
(VCE = 4V)
25
ºC (
Ca
se
te
mp
era
ture
)
12
5ºC
(C
ase
te
mp
era
ture
)
–30
ºC (
Ca
se
te
mp
era
ture
)
t (ms)
(VCE = 4V)
IC (A)IC (A)
h FE
h FE
f T (
MH
z)
(VCE = 12V)
IE (A) VCE (V)
I C (
A)
natural air coolingSilicone grease
Aluminum heatsinkUnit: mm
Ta (ºC)
PC
(W
)
50 • 50 • 2100 • 100 • 2
150 • 150 • 2
a) Part No.b) Lot No.
(Unit: mm)
External Dimensions TO220F (full-mold)
B C E
C0.5
16.9
(13.
5)8.
40.
83.
94
10.0
2.2
2.6
4.2
2.8
1.351.350.85
2.54 2.54 0.45
3.3
ab
j-a — t Characteristics
j-a
(ºC
/W)
88
89
Absolute Maximum Ratings Electrical CharacteristicsSymbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VCBO 380±50Symbol Test Conditions Ratings Unit
ICBO µAVCB = 330V 10maxIEBO µAVEB = 6V 20max
V(BR) CEO VIC = 25mA
hFE VCE = 2V, IC = 3A330 to 430
VCE (sat) VIC = 4A, IB = 20mA 1.5max1500min
VCEO VV
380±50VEBO V6IC AIB A1PC W35 (Tc=25ºC)Tj ºC150Tstg ºC–55 to +150
6 (pulse 10)
IC — VCE Characteristics (typ.)
PC — Ta Derating
IC — VBE Temperature Characteristics (typ.)
hFE — IC Characteristics (typ.) hFE — IC Temperature Characteristics (typ.)
fT — IE Characteristics (typ.)
j-a — t Characteristics
Safe Operating Area (single pulse)
VCE (sat) — IB Characteristics (typ.)
Power Transistor 2SD2141
00
5
10
2 4 6
IB = 1mA
2mA
4mA18mA
20mA
90mA60mA
0
3
2
1
0.2 10.5 105 20010050
1A
3A5A
IC = 7A
0.02 0.1 10.5 105
500010000
1000500
100
10
50
Typ
0.1
1
5
0.5
1 10 100 1000
1ms
10ms
100ms
501051 100 5000.01
0.05
0.1
1
0.5
10
20
5 DC
Without heatsinknatural air cooling
40
30
20
10
20
0 25 50 75 100 125 150
With infinite heatsink
Without heatsink
0
10
5
0 2.0 2.41.0
0.02 0.1 1.0 50.5 10
500010000
1000500
100
50
20
125ºC
–55ºC25ºC
–0.05–0.01 –0.1 –0.5 –1 –50
20
10
30
40
Typ
VCE (V)
I C (
A)
120mA150mA
IB (mA)
VC
E (s
at)
(V)
VBE (V)
I C (
A)
(VCE = 4V)
25
ºC (
Ca
se t
em
pe
ratu
re)
125º
C (
Cas
e te
mp
erat
ure)
–30
ºC (
Ca
se
te
mp
era
ture
)
t (ms)
j-a
(ºC
/W)
(VCE = 2V)(VCE = 2V)
IC (A)IC (A)
h FE
h FE
f T (
MH
z)
(VCE = 12V)
IE (A) VCE (V)
I C (
A)
natural air coolingSilicone grease
Aluminum heatsinkUnit: mm
Ta (ºC)
PC
(W
)
100 • 100 • 2
150 • 150 • 250 • 50 • 2
a) Part No.b) Lot No.
(Unit: mm)
External Dimensions TO220F (full-mold)
B C E
C0.5
16.9
(13.
5)8.
40.
83.
94
10.0
2.2
2.6
4.2
2.8
1.351.350.85
2.54 2.54 0.45
3.3
ab
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VCBO V65±5Symbol Test Conditions Ratings Unit
ICBO
12
VCC(V)
12
RL(Ω)
1
IC(A)
10
VBB1(V)
–5
VBB2(V)
30
IB1(mA)
–30
IB2(mA)
0.25
ton(µs)
0.8
tstg(µs)
0.35
tf(µs)
µAVCB = 60V 10maxIEBO µAVEB = 6V 10maxVCEO VIC = 50mA 60 to 70hFE VCE = 1V, IC = 1A 700 to 3000VCE (sat) VIC = 1.5A, IB = 15mA 0.15maxVFEC VIFEC = 6A 1.5maxEs/b mJL = 10mH, single pulse 200min
VCEO V65±5VEBO V 6IC A ±6 (pulse ±10)IB A 1PC W30 (Tc=25ºC)Tj ºC150 Tstg ºC–55 to +150
0 1 2 3 4 5
IC — VCE Characteristics (typ.)
PC — Ta Derating
IC — VBE Temperature Characteristics (typ.)
0
10
8
6
4
2
I C (
A)
VCE (V)
0.01 0.05 0.1 10.5 5 10
hFE — IC Characteristics (typ.)
5000
1000
500
100
5030
h FE
IC (A)
(VCE = 1V)
0.01 0.05 0.1 10.5 5 10
hFE — IC Temperature Characteristics (typ.)
5000
1000
500
100
5030
h FE
IC (A)
(VCE = 1V)
–0.01 –0.05 –0.1 –1–0.5 –5 –10
fT — IE Characteristics (typ.)
30
25
20
15
10
5
0
f T (
MH
z)
IE (A)
1 5 10 10050 500 1000
j-a — t Characteristics
5
1
0.5
0.3
j-
a (º
C/W
)
t (ms)
(VCE = 1V)
(IC = 1.5A)
0 50 100 1500
30
20
10
PC (
W)
Ta (ºC)
Safe Operating Area (single pulse)
1 5 10 50 100
20
10
1
0.1
0.5
5
I C (
A)
VCE (V)
0 0.5 1.0 1.50
6
4
5
2
1
3
I C (
A)
VBE (V)
VCE (sat) — IB Temperature Characteristics (typ.)
1 5 10 50 100 4000
0.75
0.5
0.25VC
E (s
at)
(V)
IB (mA)
IB = 1mA
3mA
5mA
10mA
20mA30mA
natural air coolingSilicone grease
Aluminum heatsinkUnit: mm
50 • 50 • 2
100 • 100 • 2
150 • 150 • 2
Without heatsink
With infinite heatsink
Ta=55ºC25ºC75ºC
125ºC
Ta = –55ºC25ºC75ºC
125ºC
Without heatsinknatural air cooling
0.5m
sec
1msec
10msec
100msec
D.C (Tc = 25ºC)
Ta = –55ºC25ºC75ºC
125ºC
Typ
Absolute Maximum Ratings Electrical Characteristics
Typical Switching Characteristics
Power Transistor 2SD2382
Typ
a) Part No.b) Lot No.
(Unit: mm)
External Dimensions TO220F (full-mold)
B C E
C0.5
16.9
(13.
5)8.
40.
83.
94
10.0
2.2
2.6
4.2
2.8
1.351.350.85
2.54 2.54 0.45
3.3
ab
90
91
Absolute Maximum Ratings Electrical CharacteristicsSymbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VCBO 200Symbol Test Conditions Ratings Unit
ICBO µAVCB=200V 100maxIEBO mAVEB=6V 10max
VCEO VIC=50mA
hFE VCE=2V, IC=6A150min
VBE (sat) VIC=6A, IB=6mA 2.0maxVCE (sat) VIC=6A, IB=6mA 1.5max
2000min
VCEO VV
150VEBO V6
8IC AIB A1
PC W35 (Tc=25ºC)
2 (Ta=25ºC, No Fin)Tj ºC150Tstg ºC–55 to +150
Power Transistor 2SD2633
External Dimensions TO220F (full-mold)
B C E
C0.5
16.9
(13.
5)8.
40.
83.
94
10.0
2.2
2.6
4.2
2.8
1.351.350.85
2.54 2.54 0.45
3.3
ab
a) Part No.b) Lot No.
(Unit: mm)
0 –1 –2 –3 –4
–8
–6
–4
–2
0
I C (
A)
VCE (V)
–0.01 –0.05 –0.1 –1–0.5 –5 –8
500
100
30
50
h FE
IC (A)
(VCE = –4V)
0.01 0.05 0.1 10.5 5 10
30
20
10
0
f T (
MH
z)
IE (A)
0.0002 0.010.001 0.1 1 10 100
50
10
1
5
0.1
0.5
0.05
j-
a (º
C/W
)
t (sec)
(VCE = 12V)
0 50 100 1500
40
30
20
10
PC
(W
)
Ta (ºC)
–3 –5 –10 –50 –150–100
–12–10
–1
–0.1
–0.5
–5
I C (
A)
VCE (V)
0 –0.5 –1.0 –1.50
–8
–6
–2
–4
I C (
A)
VBE (V)
–5 –10 –50 –100 –500 –2000–10000
–2
–1
VC
E (s
at)
(A)
IB (mA)
IB = –10mA
–25mA
–50mA
natural air coolingSilicone grease
Aluminum heatsinkUnit: mm
100•100•2
200•200•2
Without heatsink
With infinite heatsink
Tc = –40ºC25ºC75ºC
125ºC
Ic = –1A
Ic = –3A
Ic = –5A
1msec10m
sec
100msec
D.C (Tc = 25ºC)
Typ
–75mA
–100mA
–150mA
–200
mA
–300
mA
Tc = 25ºC
Single Pulese
NO Fin (Ta = 2
5ºC)
(VBE = –4V)
natural air coolingWithout heatsink
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VCBO –120 Symbol Test Conditions Ratings Unit
ICBO
–12
VCC(V)
4
RL(Ω)
–3
IC(A)
–10
VBB1(V)
5
VBB2(V)
–30
IB1(mA)
30
IB2(mA)
2.5
ton(µs)
0.4
tstg(µs)
0.6
tf(µs)
µAVCB = –120V 10maxIEBO µAVEB = –6V 10max
VCEO VIC = –50mA –120minhFE VCE = –4V, IC = –3A 70min
VCE (sat) VIC = –3A, IB = –0.3A –0.3max
VCEO VV
–120 VEBO V–6IC A–8 (pulse –12)IB A–3PC W35 (Tc=25ºC)Tj ºC150Tstg ºC–55 to +150
Absolute Maximum Ratings Electrical Characteristics
Typical Switching Characteristics
IC — VCE Characteristics (typ.)
PC — Ta Derating
IC — VBE Temperature Characteristics (typ.)
hFE — IC Characteristics (typ.) hFE — IC Temperature Characteristics (typ.)
fT — IE Characteristics (typ.)
j-a — t Characteristics
Safe Operating Area (single pulse)
VCE (sat) — IB Characteristics (typ.)
Power Transistor FP812
92
Typ
–0.01 –0.05 –0.1 –1–0.5 –5 –8
500
100
50
30
h FE
IC (A)
(VCE = –4V)
Tc = 125ºC
75ºC25ºC
–55ºC
a) Part No.b) Lot No.
(Unit: mm)
External Dimensions TO220F (full-mold)
B C E
C0.5
16.9
(13.
5)8.
40.
83.
94
10.0
2.2
2.6
4.2
2.8
1.351.350.85
2.54 2.54 0.45
3.3
ab
Absolute Maximum Ratings Electrical CharacteristicsSymbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VCBO 115±10Symbol Test Conditions
RatingsUnit
ICBO µAVCB=105V
min
IEBO µAVEB=6V
VCEO VIC=50mAhFE VCE=1V, IC=1A
105
VCE (sat) VIC=1.2A, IB=12mA400
VCEO VV
115±10VEBO V6IC AIB A1
PC W50 (Tc=25ºC)
1.2 (Ta=25ºC, No Fin)Tj ºC150Tstg ºC–55 to +150
VFEC VIFEC=6AES/B mJL=10mA 45
typ
115
0.08800
1.25
10
max
10125
0.121500
1.5
±6 (pulse ±10)
Power Transistor MN611S
93
External Dimensions TO220S
a
b
10.2±0.3
1.27±0.2
2.54±0.52.54±0.5
1.2±0.2
1.6
10.0
8.6±0
.3(1
.4)
–0.5
+0.
3
–0.5
+0.
33.
0
0.86 –0.1+0.2
–0.1+0.2
4.44±0.2
1.3±0.2
0.4±0.1
(1.5
) 0.1
a) Part No.b) Lot No.
(Unit: mm) IC — VCE Characteristics (typ.)
2
1
0
3
4
5
I C (
A)
7
8
6
VCE (sat) — IB Characteristics (typ.)
0
VC
E (s
at)
(V) 0.5
0.75
0.25
VCE (sat) — IB Temperature Characteristics (typ.) IC — VBE Temperature Characteristics (typ.)
hFE — IC Characteristics (typ.) hFE — IC Temperature Characteristics (typ.) ton•tstg•tf — IC Characteristics (typ.)
j-c • j-a — t Characteristics (Single pulse) Safe Operating Area (Single pulse)
IFEC — VFEC Temperature Characteristics (typ.)
PT — Ta Derating
2
1
0
3
4
I C (
A)
6
7
5
I FE
C (
A)
0.1
I C (
A)
10
20
1
20
10
0
PC (
W)
50
60
40
30
30
h FE
1000
5000
100
10
50
1
0.1
0.1
t on
•tst
g•t
f (µ
sec)
10
1
0 2 3 4 5 6
VCE (V)1 0 100 1000
IB (mA)10
0
VC
E (s
at)
(V) 0.5
0.75
0.25
0 100 1000
IB (mA)10
0.01 1 10
Ic (A)0.1
30
h FE
1000
5000
100
0.01 1 10
Ic (A)0.1
0.001 0.01 0.1 1 10
t (s)
0 1.0 1.5
VBE (V)0.5
2
1
0
3
4
6
7
5
0 1.0 1.50.5
VFEC (V)
0 2 3
Ic (A)1
1 100 200
VCE (V)10 0 75 100 125 150
Ta (ºC)25 50
IB = 1mA
3mA
5mA
10mA
20mA
30mA
Ta = 25ºCVCC = 12VIB1 = –IB2 = 30mA
ton
tf
tstg
(Ta = 25ºC)(VCE = 1V) (VCE = 1V)
typ
Ta = 150ºC125ºC
75ºC25ºC
–55ºC
(Ta = 25ºC)(Ta = 25ºC)
IC = 1.2A
IC = 0.5A
IC = 2A
(IC = 1.2A)
Ta = 150ºC125ºC75ºC25ºC
–55ºC
(VCE = 1V)
Ta = 150ºC125ºC75ºC25ºC
–55ºC
Ta = 150ºC125ºC
75ºC25ºC
–55ºC
(Tc = 25ºC)
FR4 (70 • 100 • 1.6mm) Use substrate j-a
j-c
(Ta = 25ºC)
PT =50µsPT =500µsPT =1msPT =10ms
12
VCC(V)
12
RL(Ω)
1
IC(A)
10
VBB1(V)
–5
VBB2(V)
30
IB1(mA)
–30
IB2(mA)
0.2typ
ton(µs)
5.7typ
tstg(µs)
0.4typ
tf(µs)
Typical Switching Characteristics
Without heatsink
j-c
• j-
a (º
C/W
)
Absolute Maximum Ratings Electrical CharacteristicsSymbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VCBO 380±50Symbol Test Conditions Ratings Unit
ICBO µAVCB=330V 10maxIEBO mAVEB=6V 20max
V(BR) CEO VIC=25mAhFE VCE=2V, IC=3A
330 to 430
VCE (sat) VIC=4A, IB=20mA 1.5max1500min
VCEO VV
380±50VEBO V6IC AIB A1PC W60 (Tc=25ºC)Tj ºC150Tstg ºC–55 to +150
6 (pulse 10)
IC — VCE Characteristics (typ.) IC — VBE Temperature Characteristics (typ.)
hFE — IC Characteristics (typ.) hFE — IC Temperature Characteristics (typ.) j-c • j-a —t Characteristics
VCE (sat) — IB Characteristics (typ.)
Power Transistor MN638S
94
00
5
10
2 4 6
IB=1mA
2mA
4mA18mA
20mA
90mA60mA
0
3
2
1
0.2 10.5 105 20010050
1A
3A5A
IC = 7A
0.02 0.1 10.5 105
500010000
1000500
100
10
50
Typ
0.1
1
10
100
0.1 10.010.001 10
0
10
5
0 2.0 2.41.0
0.02 0.1 1.0 50.5 10
500010000
1000500
100
50
20
125ºC
–55ºC25ºC
VCE (V)
I C (
A)
120mA150mA
IB (mA)
VC
E (s
at)
(V)
VBE (V)
I C (
A)
(VBE =4V)
25
ºC (
Ca
se t
em
pe
ratu
re)
125º
C (
Cas
e te
mp
erat
ure)
–30
ºC (
Ca
se
te
mp
era
ture
)
t (s)
(VCE = 2V)(VCE = 2V)
IC (A)IC (A)
h FE
h FE
External Dimensions TO220S
j-a
j-c
a
b
10.2±0.3
1.27±0.2
2.54±0.52.54±0.5
1.2±0.2
1.6
10.0
8.6±0
.3(1
.4)
3.0
–0.5
+0.
3–0
.5+
0.3
0.86 –0.1+0.2
–0.1+0.2
4.44±0.2
1.3±0.2
0.4±0.1
(1.5
) 0.1
a) Part No.b) Lot No.
(Unit: mm)
j-c•
j-a
(ºC
/W)
95
Absolute Maximum Ratings Electrical Characteristics(Ta=25ºC) (Ta=25ºC)
Symbol Test ConditionsRatings
Unit
ICBO µAVCB = 60V, IE = 0Amin
IEBO µAVEB = 6V, IC = 0A
VCEO VIC = 50mAhFE VCE = 1V, IC = 1A
60
VCE (sat) VIC = 1.5A, IB = 15mA400
VFEC VIFEC = 6AEs/b mJL = 10mH 80
typ
65
0.11800
1.25
10
max
10 70
0.151500
1.5
Surface-mount Power Transistor SSD103
External Dimensions SOP8
Symbol Ratings UnitVCBO 65±5VCEO V
V65±5
VEBO V66
IC (pulse)IC
A10 (Pw 1mS, Duty 25%)IB A10PC W1.5Tj °C150Tstg °C–55 to +150
*1: FR4 70mm•100mm•1.6mm (drain heatsink copper foil area 25•25mm)
0.7±0.2
1.27±0.25
5.0±0.2
1.5±0
.2
4.4±0
.2
6.2±0
.3
0.5±0
.2
5.4Max
0 to 0.1
0.42+0.15–0.05 0.17
+0.15–0.05
a
b
c
d
4.7M
ax
8 5
1 4
0 to 10°
a) Part No.b) Corporate markc) Lot No.d) Control No.
(Unit: mm)
0 1 2 53 4
IC — VCE Characteristics (typ.)
0
5
4
3
2
I C (
A)
VCE (V)
1
7
6
0
0.25
0.75
0.5
0.01 0.1 1 10
VCE (sat) — IC Temperature Characteristics (typ.)
VC
E (s
at)
(V)
IC (A)
0.01 0.1 101
hFE — IC Temperature Characteristics (typ.)
50
h FE
2000
1000
500
100
0 1 2 3
ton• tstg•tf — IC Characteristics (typ.)
0.1
0.5
1
t on•t
stg•t
f (µS
)
IC (A)IC (A)
5
1 5 10 50 100
Safe Operating Area
0.5
0.1
1
5
I C (
A)
VCE (V)
20
10
0 0.5 1.0 1.5
IC — VBE Temperature Characteristics (typ.)
0
6
5
4
3
2
1
I C (
A)
VBE (V)
IB = 1mA
3mA
VCC = 12VIB1 = –IB2 = 30mA
IC/IB = 100
(VCE = 1V)
(VCE = 1V)
Ta = –55ºC25ºC75ºC
125ºC1m
s0.5m
s
10ms
Ta = 125ºC75ºC25ºC
–55ºC
10mA
30mA
20mA
5mA
Ta = 125ºC75ºC25ºC
–55ºCtf
ton
tstg
natural air coolingWithout heatsink
Equivalent Circuit Diagram
5, 6, 7, 8
2, 3, 4
1
(Single pulse)
*1
0 –1 –2 –3 –4 –5
IC — VCE Characteristics
0
–5
–6
I C (
A)
VCE (V)
–4
–3
–2
–1
0 50 100 150
PT — Ta Derating
0
3
2
1
PT
(W
)
Ta (ºC)
4
0.001 0.01 0.1 1 2
j-a — t Characteristics (Single pulse)
0.3
1
5
10
j-
a (º
C/W
)
t (s)
50
–3 –5 –10 –50 –100
Safe Operating Area (Single pulse)
–0.1
–0.5
–10
–1I C (
A)
VCE (V)
–20
–0.05 –1–0.1 –10
VCE (sat) — IC Temperature Characteristics (typ.)
0
–1
–2
VC
E (s
at)
(V)
IC (A)
–3
IB = –5mA
–10mA
–20mA
–30mA
–50mA
IC/IB = 20
(Ta = 25ºC)
0 –0.5 –1.0 –1.5
IC — VBE Temperature Characteristics (typ.)
0
–5
–4
–3
–2
–1
–6
I C (
A)
VBE (V)
(VCE = –4V)
Without heatsink20ms
10ms
1ms
–200mA –100mA
Ta = 150ºC75ºC25ºC
–55ºC
Ta = 150ºC75ºC
25ºC –55ºC
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VCBO –60Symbol Test Conditions Ratings Unit
ICBO
–12
VCC(V)
12
RL(Ω)
–1
IC(A)
–10
VBB1(V)
5
VBB2(V)
–50
IB1(mA)
50
IB2(mA)
0.4
ton(µs)
1.75
tstg(µs)
0.22
tf(µs)
µAVCB = –60V –10maxIEBO µAVEB = –6V –10max
VCEO VIC = –25mA –60minhFE VCE = –4V, IC = –2A 100min
VCE (sat) VIC = –2A, IB = –0.1A –0.4max
VCEO VV
–60VEBO V –6IC A–6 (pulse –12)IB A –1PT W3 (No Fin)Tj ºC150Tstg ºC–55 to +150
Electrical Characteristics
Typical Switching Characteristics
natural air coolingWithout heatsink
15
16
2
13
14
4
11
12
6
9
10
8
Surface-mount Power Transistor Array SDA03
96
0.05
1
0.5
0.1
5
–0.5 –0.1 –0.5 –1 –5 –10
ton•tstg•tf — IC Characteristics
ton
•tst
g•t
f (µ
sec)
IC (A)
–0.01 –0.1 –1 –10
hFE — IC Temperature Characteristics
30
100
50
500
h FE
IC (A)
1000VCE = –4V
Ta = 150ºC
VCC = 12VIB1 = –IB2 = 50mA
ton
tf
tstg75ºC
25ºC–55ºC
Absolute Maximum Ratings
a) Part No.b) Lot No.
(Unit: mm)
a
b
20.0max
2.54±0.250.89±0.15
8.0±0
.5
6.3±0
.2
0 to
0.15
3.0±0
.2
0.25
9.8±0
.3
1.0±0
.3
19.56±0.2
6.8m
ax
0.75
0.3+0.15–0.05
+0.15–0.05
16
Pin 1 8
9
4.0m
ax
3.6±0
.2
1.4±0
.2
External Dimensions SMD-16A
Equivalent Circuit Diagram
0 50 100 1500
3
2
1
PT (
W)
Ta (ºC)
4
Without heatsink
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VCBO –60Symbol Test Conditions Ratings Unit
ICBO
–12
VCC(V)
12
RL(Ω)
–1
IC(A)
–10
VBB1(V)
5
VBB2(V)
–50
IB1(mA)
50
IB2(mA)
0.4
ton(µs)
1.75
tstg(µs)
0.22
tf(µs)
µAVCB = –60V –10maxIEBO µAVEB = –6V –10max
VCEO VIC = –25mA –60minhFE VCE = –4V, IC = –2A 100min
VCE (sat) VIC = –2A, IB = –0.1A –0.4max
VCEO VV
–60VEBO V –6IC A–6 (pulse –12)IB A –1PT W2.5 (No Fin)Tj ºC150Tstg ºC–55 to +150
Absolute Maximum Ratings Electrical Characteristics
Typical Switching Characteristics
15
16
2
9
10
8
PT — Ta Derating
Surface-mount Power Transistor Array SDA04
97
0 –1 –2 –3 –4 –5
IC — VCE Characteristics
0
–5
–6
I C (
A)
VCE (V)
–4
–3
–2
–1
0.05
1
0.5
0.1
5
–0.5 –0.1 –0.5 –1 –5 –10
ton•tstg•tf — IC Characteristics
t on
•t s
tg•t f
(µs
ec)
IC (A)
–0.01 –0.1 –1 –10
hFE — IC Temperature Characteristics
30
100
50
500
h FE
IC (A)
1000
0.001 0.01 0.1 1 2
j-a — t Characteristics (Single pulse)
0.3
1
5
10
j-
a (º
C/W
)
t (s)
50
–3 –5 –10 –50 –100
Safe Operating Area (Single pulse)
–0.1
–0.5
–10
–1I C (
A)
VCE (V)
–20
–0.05 –1–0.1 –10
VCE (sat) — IC Temperature Characteristics (typ.)
0
–1
–2
VC
E (s
at)
(V)
IC (A)
–3
IB = –5mA
–10mA
–20mA
–30mA
–50mA
IC/IB = 20
VCE = –4V
Ta = 150ºC
(Ta = 25ºC)
VCC = 12VIB1 = –IB2 = 50mA
0 –0.5 –1.0 –1.5
IC — VBE Temperature Characteristics (typ.)
0
–5
–4
–3
–2
–1
–6
I C (
A)
VBE (V)
(VCE = –4V)
20ms
10ms
1ms
–200mA –100mA
Ta = 150ºC75ºC25ºC
–55ºC
Ta = 150ºC75ºC
25ºC –55ºC
ton
tf
tstg75ºC
25ºC–55ºC
natural air coolingWithout heatsink
Equivalent Circuit Diagram
a) Part No.b) Lot No.
(Unit: mm)
a
b
20.0max
2.54±0.250.89±0.15
8.0±0
.5
6.3±0
.2
0 to
0.15
3.0±0
.2
0.25
9.8±0
.3
1.0±0
.3
19.56±0.2
6.8m
ax
0.75
0.3+0.15–0.05
+0.15–0.05
16
Pin 1 8
9
4.0m
ax
3.6±0
.2
1.4±0
.2
External Dimensions SMD-16A
14
1 3 4 13 15 16
2
11
5 6 8 9 10 12
7
Surface-mount Power Transistor Array SDC09
98
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VCBO 65±5Symbol Test Conditions Ratings Unit
ICBO µAVCB = 60V 10maxIEBO µAVEB = 6V 10max
VCEO VIC = 50mA 60 to 70hFE VCE = 1V, IC = 1A 400 to 1500VCE (sat) VIC = 1.5A, IB = 15mA 0.15maxVFEC VIFEC = 6A 1.5maxEs/b mJL = 10mH, single pulse 80min
VCEO VV
65±5VEBO V 6IC A6 (pulse 10 *)IB A 1PT W2.8Tj ºC150 Tstg ºC–55 to +150
* PW 100µs, Duty 1%
Absolute Maximum Ratings Electrical Characteristics
a) Part No.b) Lot No.
(Unit: mm)
a
b
20.0max
2.54±0.250.89±0.15
8.0±0
.5
6.3±0
.2
0 to
0.15
3.0±0
.2
0.25
9.8±0
.3
1.0±0
.3
19.56±0.2
6.8m
ax
0.75
0.3+0.15–0.05
16
Pin 1 8
9
4.0m
ax
3.6±0
.2
1.4±0
.2
External Dimensions SMD-16A
Equivalent Circuit Diagram
+0.15–0.05
0 50–50 100 1500
3
2
1
PT
(W
)
Ta (ºC)
6
5
50•50 •1.6mmUse substrate
42•31•1.0mmUse substrate
PT — Ta Derating
0 1 2 3 4 5
IC — VCE Characteristics
0
5
6
7
8
I C (
A)
VCE (V)
4
3
2
1
1
0.1
10
0 0.5 1.0 1.5 2.0 2.5 3.0
ton•tstg•tf — IC Characteristics
t on
•t s
tg•t f
(µs
ec)
IC (A)
0.01 0.1 1 10
hFE — IC Temperature Characteristics
1000
100
50
5000
h FE
IC (A)
0.1 1 10 100 10000.05
0.1
1
10
j-a
(ºC
/W)
t (ms)
0.5 1 5 10 50 100
Safe Operating Area (Single pulse)
0.1
0.05
0.5
10
1
5
I C (
A)
VCE (V)
20
0.0001 0.010.001 0.1
VCE (sat) — IC Temperature Characteristics (typ.)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VC
E (s
at) (
V)
IC (A)
1mA
3mA5mA
10mA
20mA
IC/IB=100
VCE=1V
Ta=150ºC
(Use substrate 42•31•1m)
VCC=12VIB1=–IB2=30mA
0 0.2 0.4 1.21.00.80.6
IC — VBE Temperature Characteristics (typ.)
0
5
4
3
2
1
6
I C (
A)
VBE (V)
(VCE = 4V)
IB= 30mA
Ta=150ºC100ºC75ºC25ºC
–55ºC
Ta=150ºC100ºC 75ºC 25ºC
–55ºC
ton
tf
tstg
75ºC100ºC
25ºC–55ºC
1ms
10ms
0.5ms
Ta=25ºC
j-a — t Characteristics (Single pulse)
Absolute Maximum Ratings Electrical Characteristics
SymbolRatings
NPN PNPUnit
(Ta=25ºC) (Ta=25ºC)
VCBO 60 –55–55 –6–12 –3
SymbolTest Conditions
NPN PNPRatings Test Conditions Ratings
Unit
ICBO µAVCB = 60V 100maxIEBO mAVEB = 6V 60max
VCEO VIC = 25mA 60minhFE VCE = 1V, IC = 3A 150min VCE (sat) VIC = 6A, IB = 0.3A 0.35max VFEC VIFEC = 10A 2.5max
VCB = –55V –100max VEB = –6V –60max
IC = –25mA –55minVCE = –1V, IC = –3A 80minIC = –6A, IB = –0.3A –0.35max
IFEC = 10A 2.5max
VCEO VV
60VEBO V 6
12IC AIB A 3
PTWW
5 (Tc=25ºC, No Fin)40 (Tc=25ºC)
Tj 150Tstg
ºCºC–55 to +150
84
9
710
36
12
111
2
R1: 500Ω Typ.R2: 500Ω Typ.
R1
R2
5
Power Transistor Array SLA8004
99
Equivalent Circuit Diagram
a) Part No.b) Lot No.
(Unit: mm)
3.2±0.15 •3.8
11• P2.54±0.1= (27.94)
3.2±0.15
31±0.2
4.8±0.2
1.7±0.1
2.45±0.2
4– (R1)
R-end
4±0.7
24.4±0.2
9.9±0
.2
12.9
±0.2
16±0
.2
5±0.5
(3)
1.2±0.15
0.85
1.45±0.15
31.3±0.2
16.4±0.2
(Root dimension)
(Root dimension)
+0.2–0.1
0.55
1 2 3 4 5 6 7 8 9 10 1211
ab
External Dimensions SLA 12pin (LF817)
+0.2–0.1
IC — VCE Characteristics (typ.)
00
–8
–4
–12
–6
–2
–10
–2–1 –3 –4 –5 –6
–40mA
–60mA
–100mA–150mA
–20mA
–10mA
IB=
–200
mA
VCE (V)
I C (A
)
hFE — IC Characteristics (typ.)
–0.02 –0.1 –1–12
–102
10
300
100
Typ
IC (A)
h FE
(VCE = –1V) (PNP)
(PNP)
hFE — IC Temperature Characteristics (typ.)
–0.02 –0.1 –1–12
–102
10
300
100
125ºC 25ºC–30ºC
(PNP)(VCE = –1V)
IC (A)
h FE
VCE (sat) — IB Characteristics (typ.)
0
–1.4
–1.0
–0.5
–7 –100–10 –1000 –3000
IB (mA)
VC
E (s
at)
(V)
–1A
–3A–6A
–9AIC = –12A
(PNP) (NPN)
IC — VCE Characteristics (typ.)
00
4
2
8
6
12
10
2 4 6
200m
A
IB = 10mA
20mA
40mA
60mA
100mA150mA
VCE (V)
I C (
A)
hFE — IC Temperature Characteristics (typ.)
0.02 0.1 1 101235
50
10
100
400
25ºC
–30ºC
125ºC
(NPN)(VCE = 1V)
IC (A)
h FE
hFE — IC Characteristics (typ.)
0.02 0.1 1 10 1235
50
10
100
400Typ
(NPN)(VCE = 1V)
IC (A)
h FE
VCE (sat) — IB Characteristics (typ.)
0
1.0
1.3
0.5
5 10 100 30001000
IC = 1A
12A
3A6A
9A
IB (mA)
VC
E (s
at)
(V)
(NPN)
1.0
10.5
±0.3
+0.1–0.05
0.25+0.15–0.05
2.5±0
.2
14.74±0.2
7.5±0
.2
2±0.2
13.04±0.2
1.27±0.25
20
1 10
11
0.4+0.15–0.05
a
b
F1
3
18,19
F2
8
12,13
Surface-mount Power Transistor Array SPF0001
100
(Ta=25ºC) (Ta=25ºC)Absolute Maximum Ratings Electrical Characteristics External Dimensions SPF 20pin
Equivalent Circuit Diagram
Symbol Ratings UnitVCBO 115±10
Symbol Test ConditionsRatings
Unit
ICBO µAVCB = 105VIEBO µAVEB = 6V
VCEO VIC = 50mA 105hFE VCE = 1V, IC = 1A 400VCE (sat) VIC = 1.2A, IB = 12mAVFEC VIFEC = 6AEs/b mJL = 10mH 45
1158000.081.25
10
max typmin
10125
1500 0.121.5
VCEO VV
115±10VEBO V 6IC A ±6 (pulse ±10)
2.5 (Ta = 25ºC)IB A 1PT WTj ºC150 Tstg ºC–55 to +150
*
* Use glass epoxy substrate (FR4) 70mm •100mm•1.6mm
11
(4.7
)
(3.0
5)
20
F1 F2
(2.4)
(11.43)4-( 0.8)
(13.54)
101
a) Part No.b) Lot No.
(Unit: mm)
Fin thickness
0.001 0.01 0.1 1
VCE (sat) — IB Temperature Characteristics (typ.)
0
0.25
0.5
VC
E (s
at) (
V)
IB (A)
(VCE = 1V)
(VCE = 1V)
(IC = 1.2A)
150°C 25°C
–55°C
0.1 1 50.5 6
hFE — IC Temperature Characteristics (typ.)
100
500
50
h FE
IC (A)
10
1000
IC — VBE Temperature Characteristics (typ.)
0
3
2
1
4
5
6
I C (
A)
VBE (V)
0 0.2 1.0 1.20.4 1.40.80.6 0 0.2 1.0 1.20.4 1.40.80.6
IC — VEC Temperature Characteristics (typ.)
0
4
I C (
A)
VEC (V)
2
10
8
6
0.00001 0.0001 0.001 0.01 0.1 101 100
Transient thermal resistance characteristics
0.01
1
100
10
0.1
j-a•
j-f (°
C/W
)
Power time (s)
(82•36•1mm at the time of mounting the recommended pattern of the glass epoxy board)
1 10 100 200
Safe Operating Area (single pulse)
0.1
I C (
A)
VCE (V)
1
20
100.5m
s
2 circuits operate
1 circuits operate
1 circuits operate
2 circuits operate
j-f
j-a1ms
150°C25°C
–55°C
150°C
25°C
–55°C
150°C25°C
–55°C
0
2
1
3
0 0.5 1 5
VCE (sat) — IC Temperature Characteristics
VC
E (s
at)
(V)
IC (A)
1 10 100 400
VCE (sat) — IB Temperature Characteristics
0
0.25
0.5
VC
E (s
at)
(V)
IB (mA)
IC/IB = 100
(IC = 0.5A)
Ta = 125ºC75ºC25ºC
–40ºC
Ta = 125ºC75ºC25ºC
–40ºC
0 50 1501000
10
PT (
W)
Ta (ºC)
20
Without heatsink
With infinite heatsink
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VCBO 35±5Symbol Test Conditions Ratings Unit
ICBO µAVCB = 30V 10maxIEBO mAVEB = 6V 2.7max
VCEO VIC = 25mA 31 to 41hFE VCE = 4V, IC = 0.7A 400min
VCE (sat)VV
IC = 0.5A, IB = 5mAIC = 1A, IB = 5mA
0.2max0.5max
VFEC
RB
RBE
VΩkΩ
IFEC = 2A 2.5max800±1202.0±0.4
Es/b mJL = 10mH, single pulse 50min
VCEO VV
36±5VEBO V 6IC A2 (pulse 3*)
3 (Ta=25ºC)13.5 (Tc=25ºC)
IB mA30
PTWW
Tj ºC150 Tstg ºC–55 to +150
* PW 1ms, Duty 25%
12
VCC(V)
12
RL(Ω)
1
IC(A)
10
VBB1(V)
–5
VBB2(V)
5
IB1(mA)
0
IB2(mA)
1.0
ton(µs)
8.5
tstg(µs)
2.5
tf(µs)
Absolute Maximum Ratings Electrical Characteristics
Typical Switching Characteristics
RB
3
24
5
6
7
81RBE
0 1 4 52 63
IC — VCE Characteristics (typ.)
0
2
I C (
A)
VCE (V)
1
3
0.01 0.1 40.5 1
hFE — IC Temperature Characteristics
50
100
h FE
IC (A)
3000
1000
500
0 0.5 1.0 1.5 2.0
ton•tstg•tf — IC Characteristics (typ.)
0.1
0.5
5
1
10
t on
•tst
g•t
f (µ
S)
Ic (A)
50
1 5 10 50
Safe Operating Area (single pulse)
0.5
0.1
1
5
I C (
A)
VCE (V)
(per element)
IB = 1mA
2mA
3mA
VCC = 12VIB = 5mA–IB = 0A
(VCE = 4V)
PT — Ta Derating
10ms
1ms
1 10 100 1000
j-a — t Characteristics
1
5
10
j-
a (º
C/W
)
t (ms)
20Single pulse
30m
A
12mA8mA
5mA
Ta = 125ºC75ºC25ºC
–40ºC
tstg
ton
Without heatsinknatural air cooling
Power Transistor Array STA315A
101
tf
a) Part No.b) Lot No.
(Unit: mm)
a
b
7•2.54=17.78±0.25
(2.54)
20.2±0.2
0.5±0.15
1.0±0.25
C1.5±0.5
4.0±0
.2
1.2±0
.2
0.5±0
.15
1 32 4E B C B
5 6 7 8C B C E
9.0±0
.2
2.3±0
.2
11.3
±0.2
4.7±0
.5
External Dimensions STA3 (LF400A)
Equivalent Circuit Diagram
Absolute Maximum Ratings Electrical Characteristics
Typical Switching Characteristics
0 1 2 3
IC — VCE Characteristics (typ.)
0
2
I C (
A)
VCE (V)
1
3
0
2
1
4
3
0 0.5 1.0 1.5
IC — VBE Temperature Characteristics (typ.)
I C (
A)
VBE (V)
0.01 0.05 0.1 30.5 1
hFE — IC Temperature Characteristics (typ.)
100
h FE
IC (A)
5000
1000
500
0.10.05 0.5 1 5
ton•tstg•tf — IC Characteristics (typ.)
0.3
0.5
5
1
10
t on
•t s
tg•t
f (µ
S)
Ic (A)
20
2 5 10 50
Safe Operating Area (single pulse)
0.5
0.2
1
5
I C (
A)
VCE (V)
10(per element)
0.002 0.01 0.05 0.1 0.4
VCE (sat) — IB Temperature Characteristics
0
0.5
1
VC
E (s
at)
(V)
IB (A)
IB=1mA
2mA
3mA
VCE = 12VIB1 = –IB2 = 5mA
VCE = 4V
(IC = 1A)
(VCE = 4V)
0 50 150100
PT — Ta Derating
0
10
5
PT (
W)
Ta (ºC)
15
Ta = –55ºC25ºC75ºC
125ºC
10ms
1ms
100m
Ta = 125ºC75ºC25ºC
–55ºC
0.1 1 10 100 1000 5000
j-a — t Characteristics
0.1
0.5
1
5
10
j-
a (º
C/W
)
t (ms)
20Single pulse
15m
A10
mA
8mA 6mA5mA
4mA
Ta = 125ºC75ºC25ºC
–55ºC
tstg
tf
ton
Without heatsink (All circuits operate)
With infinite heatsink (All circuits operate)
DC (Tc=25ºC)
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VCBO 35±5Symbol Test Conditions Ratings Unit
ICBO µAVCB = 30V 10maxIEBO µAVEB = 6V 10max
VCEO VIC = 25mA 35±5hFE VCE = 4V, IC = 0.5A 500minVCE (sat) VIC = 1A, IB = 5mA 0.5maxEs/b mJL = 10mH, single pulse 150min
VCEO VV
35±5VEBO V 6IC A 3
2.5 (Ta=25ºC) 12 (Tc=25ºC)
IB A 1
PTWW
Tj ºC150 Tstg ºC–55 to +150
12
VCC(V)
12
RL(Ω)
1
IC(A)
10
VBB1(V)
–5
VBB2(V)
5
IB1(mA)
5
IB2(mA)
1.3
ton(µs)
4.7
tstg(µs)
1.2
tf(µs)
2
4
3
7
5
6
Power Transistor Array STA335A
102
Equivalent Circuit Diagram
a) Part No.b) Lot No.
(Unit: mm)
a
b
7•2.54=17.78±0.25
(2.54)
20.2±0.2
0.5±0.15
1.0±0.25
C1.5±0.5
4.0±0
.2
1.2±0
.2
0.5±0
.15
1 32 4C B E
5 6 7 8E B C
9.0±0
.2
2.3±0
.2
11.3
±0.2
4.7±0
.5
External Dimensions STA3 (LF400A)
0 1 4 52 63
IC — VCE Characteristics (typ.)
0
2
I C (
A)
VCE (V)
1
3
0.01 0.1 40.5 1
hFE — IC Temperature Characteristics
50
100
h FE
IC (A)
3000
1000
500
0 0.5 1.0 1.5 2.0
ton•tstg•tf — IC Characteristics (typ.)
0.1
0.5
5
1
10
t on
•t s
tg•t
f (µ
S)
Ic (A)
50
1 5 10 50
Safe Operating Area (single pulse)
0.5
0.1
1
5
I C (
A)
VCE (V)
(per element)
IB = 1mA
2mA
3mA
VCC = 12VIB = 5mA–IB = 0A
(VCE = 4V)
0 50 150100
PT — Ta Derating
0
10
PT (
W)
Ta (ºC)
20
10ms
1ms
0
2
1
3
0 0.5 1 5
VCE (sat) — IC Temperature Characteristics
VC
E(s
at)
(V)
IC (A)
1 10 100 400
VCE (sat) — IB Temperature Characteristics
0
0.25
0.5
VC
E(s
at)
(V)
IB (mA)
IC/IB = 100
(IC = 0.5A)
Ta = 125ºC75ºC25ºC
–40ºC
Ta = 125ºC75ºC25ºC
–40ºC
1 10 100 1000
j-a — t Characteristics
1
5
10
j-
a (º
C/W
)
t (ms)
20Single pulse
30m
A
12mA8mA
5mA
Ta = 125ºC75ºC25ºC
–40ºC
tstg
ton
Without heatsink
With infinite heatsink
Without heatsinknatural air cooling
RB
3
24
5
6
7
8
9
101RBE
Power Transistor Array STA415A
103
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VCBO 35±5Symbol Test Conditions Ratings Unit
ICBO µAVCB = 30V 10maxIEBO mAVEB = 6V 2.7max
VCEO VIC = 25mA 31 to 41hFE VCE = 4V, IC = 0.7A 400min
VCE (sat)VV
IC = 0.5A, IB = 5mAIC = 1A, IB = 5mA
0.2max0.5max
VFEC
RB
RBE
VΩkΩ
IFEC = 2A 2.5max800±1202.0±0.4
Es/b mJL = 10mH, single pulse 50min
VCEO VV
36±5VEBO V 6IC A2 (pulse 3*)
4 (Ta = 25ºC)18 (Tc = 25ºC)
IB mA30
PTWW
Tj ºC150 Tstg ºC–55 to +150
* PW 1ms, Duty 25%
12
VCC(V)
12
RL(Ω)
1
IC(A)
10
VBB1(V)
–5
VBB2(V)
5
IB1(mA)
0
IB2(mA)
1.0
ton(µs)
8.5
tstg(µs)
2.5
tf(µs)
Absolute Maximum Ratings Electrical Characteristics
Typical Switching Characteristics
tf
Equivalent Circuit Diagram
a) Part No.b) Lot No.
(Unit: mm)
9 • 2.54=22.86±0.05
ab
(2.54)
25.25±0.2
9.0±0
.2
2.3±0
.2
11.3
±0.2
3.5±0
.5
0.5±0.15
0±0.31.0±0.25
C1.5±0.5
4.0±0
.2±
0.5±0
.15
1.2±0
.2
1 32 4E B C B
5 6 7 10C B C E
8 9B C
0±0.3
External Dimensions STA4 (LF412)
104
Symbol Ratings UnitVCBO 60±10VCEO V
V60±10
VEBO V6
ICP A±10 (Pw 1ms, Du 50%) 3.2 (Ta = 25°C) 18 (Tc = 25°C)
PT W
Tj °C150 Tstg °C–40 to +15
IC A±6
Equivalent Circuit Diagram
9•2.54 = 22.86±0.05
ab
(2.54)
25.25±0.2
9.0±0
.2
2.3±0
.2
11.3
±0.2
3.5±0
.5
0.5±0.15
0±0.31.0±0.25
C1.5±0.5
4.0±0
.2
0.5±0
.15
1.2±0
.2
1 32 4E B C B
5 6 7 10C B C E
8 9B C
0±0.3
(Ta=25ºC) (Ta=25ºC)Absolute Maximum Ratings Electrical Characteristics
Power Transistor Array STA460C
0 2 3 4 5
5
4
3
2
1
0
VCE (V)
IB (mA) VBE (V) PW (ms)
I C (
A)
IC — VCE Characteristics (typ.)
VCE (sat) — IB Temperature Characteristics (typ.)
PT — Ta Derating Safe Operating Area
hFE — IC Characteristics (typ.) hFE — IC Temperature Characteristics (typ.) VCE (sat) — IC Temperature Characteristics (typ.)
8
9
10
6
7
1
I C (
A)
50 100 150
Ta (ºC)
PT (
W)
20
15
10
5
00–55 5 10 50 100
VCE (V)
0.05
0.1
0.5
1
5
10
20
10.5
IC — VBE Temperature Characteristics (typ.)
0.01 0.1 0.5 1 5 10
IC (A)
hF
E
100
500
5000
1000
30
50
0.05 0.01 0.1 0.5 1 5 10
100
500
5000
1000
30
50
0.05 0.01 0.1 0.5 1 5 100.05
IC (A)
hF
E
0
IC (A)
VC
E (s
at)
(V) 0.5
0.75
0.25
IB=30
mA
20mA
10mA
5mA
3mA
1mA
typTa = 125°C
75°C
–55°C
25°CTa = –55°C
25°C75°C
125°C
IC = 3A
1.5A0.5A
Ta =
125
°C25
°C–5
5°C
75°C
With infinite heatsink
Without heatsink
Silicone grease usedVertical self-excitation
Single pulseWithout heatsinkTa=25°C
0.5ms
1ms
10ms
1 10 50 100 50050
VC
E (s
at)
(V) 0.5
0.75
0.25
0 1.0
3 8
4 9
2 7
1.50.50
1
2
3
4
5
6
I C (
A)
0.1 1 5 10 50 100 500 1000 20000.50.05
j-
a (°
C/W
)
10
5
1
0.5
0.1
20
External Dimensions STA4 (LF412)
Symbol Test ConditionsRatings
Unit
ICBO µAVCB = 50VIEBO µAVEB = 6V
VCEO VIC = 50mA 50hFE VCE = 1V, IC = 1A 700VCE (sat) VIC = 1.5A, IB = 15mAVFEC VIFEC = 6AEs/b mJL = 10mH, single pulse 200
6015000.091.25
10
max typmin
10 70
3000 0.151.5
a) Part No.b) Lot No.
(Unit: mm)
j-a — PW Characteristics(VCE = 1V)
(VCE = 1V) (VCE = 1V) (IC/IB = 100)
0 1 2 53 4
IC — VCE Characteristics (typ.)
0
5
4
3
2
I C (
A)
VCE (V)
1
7
6
0
0.25
0.75
0.5
0.01 0.1 1 10
VCE (sat) — IC Temperature Characteristics (typ.)
VC
E (s
at)
(V)
IC (A)
0.01 0.1 101
hFE — IC Temperature Characteristics (typ.)
50
h FE
IC (A)
2000
1000
500
100
0 1 2 3
ton•tstg•tf — IC Characteristics
0.1
0.5
1
ton•
tstg
•tf
(µS
)
Ic (A)
5
1 5 10 50 100
Safe Operating Area (single pulse)
0.5
0.1
1
5
I C (
A)
VCE (V)
20
10
0 0.5 1.0 1.5
IC — VBE Temperature Characteristics (typ.)
0
6
5
4
3
2
1
I C (
A)
VBE (V)
IB = 1mA
3mA
VCC = 12VIB1 = –IB2 = 30mA
IC/ IB = 100
(VCE = 1V)
(VCE = 1V)
0 50 1501000
10
15
5
PT (
W)
Ta (ºC)
20
Ta = –55ºC25ºC75ºC
125ºC1m
s0.5m
s
10ms
Ta = 125ºC75ºC25ºC
–55ºC
0.1 1 10 100 2000
j-a — t Characteristics
0.05
0.1
0.5
1
5
j-
a (º
C/W
)
t (ms)
10Single pulse
10mA
30mA
20mA
5mA
Ta = 125ºC75ºC25ºC
–55ºCtf
ton
Without heatsink
With infinite heatsink
tstg
Without heatsinknatural air cooling
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VCBO 65±5Symbol Test Conditions Ratings Unit
ICBO µAVCB = 60V 10maxIEBO µAVEB = 6V 10max
VCEO VIC = 50mA 60 to 70hFE VCE = 1V, IC = 1A 400 to 1500VCE (sat) VIC = 1.5A, IB = 15mA 0.15max VFEC VIFEC = 6A 1.5maxEs/b mJL = 10mH, single pulse 80min
VCEO VV
65±5VEBO V 6IC A±6 (pulse ±10)
3.2 (Ta = 25ºC) 18 (Tc = 25ºC)
IB A 1
PTWW
Tj ºC150 Tstg ºC–55 to +150
12
VCC(V)
12
RL(Ω)
1
IC(A)
10
VBB1(V)
–5
VBB2(V)
30
IB1(mA)
–30
IB2(mA)
0.2
ton(µs)
3.9
tstg(µs)
0.2
tf(µs)
Absolute Maximum Ratings Electrical Characteristics
Typical Switching Characteristics
3
2
4
8
7
9
PT — Ta Derating
Power Transistor Array STA461C
105
Equivalent Circuit Diagram
a) Part No.b) Lot No.
(Unit: mm)
9•2.54=22.86±0.05
ab
(2.54)
25.25±0.2
9.0±0
.2
2.3±0
.2
11.3
±0.2
4.7±0
.5
0.5±0.151.0±0.25
C1.5±0.5±
4.0±0
.2
0.5±0
.15
1.2±0
.2
1 32 4B C E
5 6 7 10B
8 9C E
External Dimensions STA4 (LF400B)
Absolute Maximum Ratings Electrical Characteristics
Typical Switching Characteristics
0 1 2 653 40
5
4
3
2
I C (
A)
VCE (V)
1
8
7
6
0
0.25
0.75
0.5
0.01 0.1 1 5
VC
E (s
at)
(V)
IC (A)
0.01 0.1 1013050
h FE
IC (A)
2000
1000
500
100
0 1 2 30.1
0.5
1
ton•
tstg
•tf
(µS
)
Ic (A)
10
5
(Tc = 25ºC)
0 0.5 1.0 1.50
7
6
5
4
3
2
1
I C (
A)
VBE (V)
IB = 1mA
3mA
VCC = 12VIB1 = –IB2 = 30mA
IC/IB = 100
(VCE = 1V)
(VCE = 4V)
0 50 1501000
10
5
PT (
W)
Ta (ºC)
20
15
Ta = –55ºC25ºC75ºC
150ºC
0
0.25
0.75
0.5
1 10 100 1000
VC
E (s
at)
(V)
IB (mA)
IC = 1.2A
Ta = 150ºC75ºC25ºC
–55ºC
Ta = 150ºC75ºC25ºC
–55ºC
0.0001 10.10.010.001 10 100 10000.1
0.5
1
510
50
j-
a (º
C/W
)
t (s)
100Single pulse
10mA
30mA
20mA
5mA
Ta = 150ºC75ºC25ºC
–55ºC tfton
Without heatsink
With infinite heatsink
tstg
Dual transistor operated
Single transistor operated
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VCBO 115±10Symbol Test Conditions Ratings Unit
ICBO µAVCB = 105V 10maxIEBO µAVEB = 6V 10max
VCEO VIC = 50mA 105 to 125hFE VCE = 1V, IC = 1A 400 to 1500VCE (sat) VIC = 1.2A, IB = 12mA 0.12max VFEC VIFEC = 6A 1.5maxEs/b mJL = 10mH, single pulse 45min
VCEO VV
115±10VEBO V 6IC A ±6 (pulse ±10)
3.2 (Ta=250ºC)18 (Tc=25ºC)
IB A 1
PTWW
Tj ºC150 Tstg ºC–55 to +150
12
VCC(V)
12
RL(Ω)
1
IC(A)
10
VBB1(V)
–5
VBB2(V)
30
IB1(mA)
–30
IB2(mA)
0.2
ton(µs)
5.7
tstg(µs)
0.4
tf(µs)
3
2
4
8
7
9
IC — VCE Characteristics (typ.) VCE (sat) — IC Temperature Characteristics (typ.)
VCE (sat) — IB Temperature Characteristics (typ.)
hFE — IC Temperature Characteristics (typ.) ton•tstg•tf — IC Characteristics
IC — VBE Temperature Characteristics (typ.)
j-a — t Characteristics
PT — Ta Derating
Power Transistor Array STA463C
Equivalent Circuit Diagram
a) Part No.b) Lot No.
(Unit: mm)
9•2.54=22.86±0.05
ab
(2.54)
25.25±0.2
9.0±0
.2
2.3±0
.2
11.3
±0.2
4.7±0
.5
0.5±0.151.0±0.25
C1.5±0.5
4.0±0
.2
0.5±0
.15
1.2±0
.2
1 32 4B C E
5 6 7 10B
8 9C E
External Dimensions STA4 (LF400B)
106
107
Absolute Maximum Ratings Electrical CharacteristicsSymbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VCBO 65±5Symbol Test Conditions
RatingsUnit
ICBO µAVCB=60VIEBO µAVEB=6V
VCEO VIC=50mA 60hFE VCE=1V, IC=1A 400VCE (sat) VIC=1.5A, IB=15mAVFEC VIFEC=6AEs/b mJL=10mH 80
658000.091.25
10
max typmin
10 70
1500 0.151.5
VCEO VV
65±5VEBO V 6IC A6 (pulse 10)
20 (Tc=25ºC) 4 (Ta=25ºC)
IB A 1
PC W
Tj ºC150 Tstg ºC–55 to +150
3
2
1
5
4
7
6
9
8
10
Power Transistor Array STA464C
Equivalent Circuit Diagram
a) Part No.b) Lot No.
(Unit: mm)
9•2.54= (22.86)±0.05
ab
(2.54)
25.25±0.2
9.0±0
.2
2.3±0
.2
11.3
±0.2
3.5±0
.5
0.5±0.151.0±0.25
C1.5±0.5
4.0±0
.2
0.5±0
.15
1.2±0
.2
1 32 4B BC BC CE
5 6 7 10B8 9
C E
External Dimensions STA4
(Root dimension)
0 1 2 53 4
IC — VCE Characteristics (typ.)
0
5
4
3
2
I C (
A)
VCE (V)
1
7
6
0
0.25
0.75
0.5
0.01 0.1 1 10
VCE (sat) — IC Temperature Characteristics (typ.)
VC
E (s
at)
(V)
IC (A)
0.01 0.1 101
hFE — IC Temperature Characteristics (typ.)
50
h FE
IC (A)
2000
1000
500
100
0 1 2 3
ton•tstg•tf — IC Characteristics
0.1
0.5
1
ton•
tstg
•tf
(µS
)
Ic (A)
5
1 5 10 50 100
Safe Operating Area (single pulse)
0.5
0.1
1
5
I C (
A)
VCE (V)
20
10
0 0.5 1.0 1.5
IC — VBE Temperature Characteristics (typ.)
0
6
5
4
3
2
1
I C (
A)
VBE (V)
IB = 1mA
3mA
VCC = 12VIB1 = –IB2 = 30mA
IC/IB = 100
(VCE = 1V)
(VCE = 1V)
0 50 1501000
10
15
5
PT (
W)
Ta (ºC)
20
Ta= –55ºC25ºC75ºC
125ºC1m
s0.5m
s
10ms
Ta = 125ºC75ºC25ºC
–55ºC
10mA
30mA
20mA
5mA
Ta = 125ºC75ºC25ºC
–55ºCtf
ton
Without heatsink
With infinite heatsink
tstg
Without heatsinknatural air cooling
PT — Ta Derating
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VDSS 60Symbol Test Conditions
RatingsUnit
V(BR) DSS ID = 100µA 60
min typ max
IGSS µAµA
VGS = ±20V ±10
IDSS
V
VDS = 60V, VGS = 0V 100VTH VDS = 10V, ID = 250µA 42RDS (ON) mΩ
V
nsV
VGS = 10V, ID = 35A
CossCiss VDS = 10V
VGS = 10Vf = 1.0MHzCrss
trr
VSD ISD = 50AISD = 25A, di/dt = 50A/µs
5.0 6.0
pFpFpF
940014001100
0.9110
1.5
VGSS VV
20 70140
ID AID (pulse) A
130PD
Tch
W400EAS mJ150
Tstg ºCºC
–55 to +150
Absolute Maximum Ratings
Features ON resistance 0.0060Ω max. Built-in G-S bidirectional Zener diode Trench MOS structure
Applications Power steering motor Various motors Replaces mechanical relays
Electrical Characteristics
MOS FET 2SK3710 (under development)
External Dimensions TO220S
0.4±0.1
(5)
(5.4)
(1.4
)
(1.3
)
(1.5
)
(0.4
5)
4.44±0.2
1.3±0.2
2.6±0.2
9.1±0
.3
2.54±0.1
1.4±0
.2
2.54±0.1
10.2±0.3
1.2±0.2
0.86+0.2–0.1
10.5
+0.
3–0
.5
3+
0.3
–0.5
0.1+0.2–0.1
1 2 3Details of the back (S=2/1)
108
(Unit : mm)
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VDSS 60Symbol Test Conditions
RatingsUnit
V(BR) DSS ID = 100µA 60
min typ max
IGSS µAµA
VGS = +20V ±10IDSS
V
VDS = 60V, VGS = 0V 100VTH VDS = 10V, ID = 250µA 42RDS (ON) mΩ
V
nsV
VGS = 10V, ID = 35A
CossCiss VDS = 10V
VGS = 10Vf = 1.0MHzCrss
trr
VSD ISD = 50AISD = 25A, di/dt = 50A/µs
5.0 6.0
pFpFpF
0.970
78001250 990
1.2
VGSS VV
20 70140
ID AID (pulse) A
130PD
Tch
WTo be definedEAS mJ
150Tstg ºC
ºC–55 to +150
Absolute Maximum Ratings Electrical Characteristics
MOS FET 2SK3711
109
External Dimensions TO-3PFeatures ON resistance 0.006Ω max. Built-in G-S bidirectional Zener diode Trench MOS structure
Applications Power steering motor Various motors Replaces mechanical relays
* 1: PW 100µs, duty cycle 1%* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped, RG = 50Ω* Contact your sales rep for the details of warranty at Tch = 175°C
(1) (2) (3)
15.8±0.2
1. Gate2. Drain3. Source
1.4
2
3
15.6±0.4
13.64.8±0.2
2.0±0.1
3.2±0.1
5.0±0
.2
9.6 1.8
20.0
min
4.0
max
19.9
±0.3
4.0
2.0
1.05+0.2–0.1 0.65
+0.2–0.1
5.45±0.1 5.45±0.1
0 1
10
0
VDS (V)
I D (
A)
ID — VDS Characteristics (typ.)
RDS (ON) — ID Characteristics (typ.)
Capacitance — VDS Characteristics IDR — VSD Characteristics
ID — VGS Characteristics (typ.) VDS — VGS Characteristics (typ.) Re (yfs) — ID Characteristics (typ.)
40
50
60
70
80
20
30
0.5
0 20 30 40 50 7060
2.0
1.0
0
ID (A)
RD
S (O
N)
(mΩ
)
I DR
(A
)
6.0
7.0
3.0
5.0
4.0
10
20 30 5040
VDS (V)
Cap
acita
nce
(pF
)
50000
1000
10000
100100 0.4 0.6 0.8 1.0 1.41.2
VSD (V)
0
10
20
30
40
50
70
60
0.20
Safe Operating Area (single pulse)
I C (
A)
1 10 100
VDS (V)
0.1
1
10
100
500
0.1
PD — TC Characteristics
PD
(W)
50 100 150
Tc (ºC)
0
20
40
100
80
60
120
140
0
RDS (ON) — TC Characteristics (typ.)
0 50 100 150
4.0
2.0
0
Tc (ºC)
RD
S (O
N)
(mΩ
) 10.0
12.0
6.0
8.0
–50–60 0.01 0.1 1 10010
0.1
0.01
Pw (sec)
10
1
0.0010.0001
0 4 6 8
10
0
VGS (V)
I D (
A)
40
50
80
70
60
20
30
2 0 10 15 20
0.2
0
VGS (V)
VD
S (
V) 0.6
0.8
1.0
0.4
5 1 10 701
ID (A)
Re
(yfs
) (S
)
100
500
10
10V8V6V
VGS = 5V
(Ta = 25ºC) (VDS = 10V)
(Ta = 25ºC)
Tc = 150°C100°C
50°C25°C0°C
–40°C
ID = 70A
35A
(VDS = 10V)
Tc = –55°C25°C
150°C
Ciss
Coss
Crss
VGS = 0Vf = 1MHz
(Ta = 25ºC) (With infinite heatsink)(Ta = 25ºC)
ID (pulse) max 500µs (1shot)
1ms (1shot)
10ms (1shot)
RDS (ON) L
IMITED
Tc = 150°C25°C
–55°C
VGS = 10VTa = 25ºC
VGS = 10VID = 35A j-c — Pw Characteristics
j-c
(ºC
/W)
a) Part No.b) Lot No.
(Unit : mm)
a
b
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VDSS 60Symbol Test Conditions
RatingsUnit
V(BR) DSS ID = 100µA 60
min typ max
IGSS µAµA
VGS = ±20V ±10IDSS
V
VDS = 60V, VGS = 0V 100VTH VDS = 10V, ID = 1mA 21RDS (ON) mΩ
V
nsV
VGS = 10V, ID = 40A
CossCiss VDS = 10V
VGS = 10Vf = 1.0MHzCrss
trr
VSD ISD = 50AISD = 25A, di/dt = 50A/µs
4.0 5.0
pFpFpF
1060016001300
0.9To be defined
1.5
VGSS VV
20 80160
ID AID (pulse) A
60PD
Tch*
WTo be definedEAS mJ
150Tstg ºC
ºC–55 to +150
Absolute Maximum Ratings Electrical Characteristics
MOS FET 2SK3724 (under development)
External Dimensions TO220S
0.4±0.1
(5)
(5.4)
(1.4
)
(1.3
)
(1.5
)
(0.4
5)
4.44±0.2
1.3±0.2
2.6±0.2
9.1±0
.3
2.54±0.1
1.4±0
.2
2.54±0.1
10.2±0.3
1.2±0.2
0.86+0.2–0.1
10.5
+0.
3–0
.5
3+
0.3
–0.5
0.1+0.2–0.1
1 2 3Details of the back (S=2/1)
Features ON resistance 0.005Ω max. Built-in G-S bidirectional Zener diode Trench MOS structure
Applications Power steering motor Various motors Replaces mechanical relays
* Contact your sales rep for the details of warranty at Tch = 175°C
110
(Unit : mm)
Absolute Maximum Ratings Electrical Characteristics(Ta=25ºC) (Ta=25ºC)
MOS FET 2SK3800
External Dimensions TO220S
0.4±0.1
(5)
(5.4)
(1.4
)
(1.3
)
(1.5
)
(0.4
5)
4.44±0.2
1.3±0.2
2.6±0.2
9.1±0
.3
2.54±0.1
1.4±0
.2
2.54±0.1
10.2±0.3
1.2±0.2
0.86+0.2–0.1
10.5
+0.
3–0
.5
3+
0.3
–0.5
0.1+0.2–0.1
1 2 3
111
Symbol Test ConditionsRatings
Unit
V(BR) DSS ID = 100µA, VGS = 0V 40
min typ max
IGSS µAµA
VGS = ±15V ±10IDSS
V
VDS = 40V, VGS = 0V 100VTH VDS = 10V, ID = 1mA 4.02.0
30RDS (ON)
Re (yfs)
mΩ
VS
nsV
VGS = 10V, ID = 35AVDS = 10V, ID = 35A
CossCiss VDS = 10V
f = 1.0MHzVGS = 0VCrss
trr
VSD ISD = 50A, VGS = 0VISD = 25A, di/dt = 50A/µs
5.0503.0
6.0
td (on) nsID = 35A 100tr nsVDD = 20V, RG = 22Ω 100td (off) nsRL = 0.57Ω, VGS = 10V 300tf ns130
Rth (ch-c) ºC/W1.56Rth (ch-a) ºC/W62.5
pFpFpF
51001200860
0.9110
1.2
Symbol Ratings UnitVDSS 40VGSS V
V±20±70
±140 ID AID (pulse)*1 A
80 (Tc=25ºC)PD
EAS*2
W400
Tstg ºC
mJTch 150 ºC
–40 to +150* 1: PW 100µs, duty cycle 1%* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped, RG = 50Ω
0 2.01.5
10
0
VDS (V)
I D (
A)
ID — VDS Characteristics (typ.)
RDS (ON) — ID Characteristics (typ.)
Capacitance — VDS Characteristics (typ.) IDR — VSD Characteristics (typ.)
ID — VGS Characteristics (typ.) VDS — VGS Characteristics (typ.) Re (yfs) — ID Characteristics (typ.)
40
50
60
70
20
30
1.00.5
0 20 30 40 50 7060
2.0
1.0
0
ID (A)
RD
S (O
N)
(mΩ
)
I DR
(A
)
6.0
7.0
3.0
5.0
4.0
10
20 30 5040
VDS (V)
Cap
acita
nce
(pF
)
50000
1000
10000
100100 0.4 0.6 0.8 1.0 1.41.2
VSD (V)
0
10
20
30
40
50
70
60
0.20
Safe Operating Area (single pulse)
I C (
A)
1 10 100
VDS (V)
0.1
1
10
100
500
0.1
PD — TC Characteristics
PD
(W)
40 806020 100 120 140 160
Tc (ºC)
0
20
10
40
30
70
60
50
80
90
0
RDS (ON) — TC Characteristics (typ.) Dynamic I/O Characteristics (typ.)
0 50 100 150
4.0
2.0
0
Tc (ºC)
RD
S (O
N)
(mΩ
)
10.0
12.0
6.0
8.0
–50–60 0.01 0.1 1 10010
0.1
0.01
t (s)
10
1
0.0001 0.0010.00001
0 3.02.0 5.04.0 7.06.0
10
0
VGS (V)
I D (
A) 40
50
70
60
20
30
1.0 0 10 15 20
0.2
0
VGS (V)
VD
S (
V) 0.6
0.8
1.0
0.4
5 1 10 701
ID (A)
Re
(yfs
) (S
)
100
500
10
10V5.5V5.0V
VGS = 4.5V
(Ta = 25ºC)(VDS = 10V)
(Ta = 25ºC)
Ta = 150°C25°C
–55°C
(ID = 35A)
ID = 70A
35A
(VDS = 10V)
Tc = –55°C25°C
150°C
Ciss
Coss
Crss
VGS = 0Vf = 1MHz
(Ta = 25ºC)
RDS (ON) L
IMITED
100 150
10
0
Qg (nC)
30
20
5
0
15
10
500
V DS
(V
)
V GS
(V
)
Ta = 150°C25°C
–55°C
VDD = 8V12V14V16V24V
VDS
VGS
PT =1ms
PT =100µsP
T =10ms
PT =10µs
Details of the back (S=2/1)
j-c — t Characteristics (Single pulse)
VGS = 10VTa = 25ºC
VGS = 10VID = 35A
j-c
(º
C/W
)
(Unit : mm)
112
MOS FET 2SK3801
External Dimensions TO-3PAbsolute Maximum Ratings Electrical Characteristics(Ta=25ºC) (Ta=25ºC)
Symbol Test ConditionsRatings
Unit
V(BR) DSS ID = 100µA, VGS = 0V 40
min typ max
IGSS µAµA
VGS = ±15V ±10IDSS
V
VDS = 40V, VGS = 0V 100VTH VDS = 10V, ID = 1mA 4.02.0
30RDS (ON)
Re (yfs)
mΩ
VS
nsV
VGS = 10V, ID = 35AVDS = 10V, ID = 35A
CossCiss VDS = 10V
f = 1.0MHzVGS = 0VCrss
trr
VSD ISD = 50A, VGS = 0VISD = 25A, di/dt = 50A/µs
5.0503.0
6.0
td (on) nsID = 35A 100tr nsVDD = 20V, RG = 22Ω 100td (off) nsRL = 0.57Ω, VGS = 10V 300tf ns130
Rth (ch-c) °C/W1.25Rth (ch-a) °C/W35.71
pFpFpF
51001200860
0.9100
1.5
Symbol Ratings UnitVDSS 40VGSS V
V±20±70
±140ID AID (pulse)*1 A
100 (Tc=25ºC)PD
EAS*1
W400
Tstg ºC
mJTch 150 ºC
–40 to +150* 1: PW 100µs, duty cycle 1%* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped, RG = 50Ω
(1) (2) (3)
15.8±0.2
1. Gate2. Drain3. Source
1.4
2
3
15.6±0.4
13.64.8±0.2
2.0±0.1
3.2±0.1
5.0±0
.2
9.6 1.8
20.0
min
4.0
max
19.9
±0.3
4.0
2.0
1.05+0.2–0.1 0.65
+0.2–0.1
5.45±0.1 5.45±0.1
0 2.01.5
10
0
VDS (V)
I D (
A)
ID — VDS Characteristics (typ.)
RDS (ON) — ID Characteristics (typ.)
Capacitance — VDS Characteristics (typ.) IDR — VSD Characteristics (typ.)
ID — VGS Characteristics (typ.) VDS — VGS Characteristics (typ.) Re (yfs) — ID Characteristics (typ.)
40
50
60
70
20
30
1.00.5
0 20 30 40 50 7060
2.0
1.0
0
ID (A)
RD
S (O
N)
(mΩ
)
I DR
(A
)
6.0
7.0
3.0
5.0
4.0
10
20 30 5040
VDS (V)
Cap
acita
nce
(pF
)
50000
1000
10000
100100 0.4 0.6 0.8 1.0 1.41.2
VSD (V)
0
10
20
30
40
50
70
60
0.20
Safe Operating Area (single pulse)
I C (
A)
1 10 100
VDS (V)
0.1
1
10
100
500
0.1
PD — TC Characteristics
PD
(W)
40 806020 100 120 140 160
Tc (ºC)
0
20
40
60
100
80
120
0
RDS (ON) — TC Characteristics (typ.)
0 50 100 150
4.0
2.0
0
Tc (ºC)
RD
S (O
N)
(mΩ
)
10.0
6.0
8.0
–50–60 0.01 0.1 1 10010
0.1
0.01
Pw (s)
10
1
0.0001 0.0010.00001
0 3.02.0 5.04.0 7.06.0
10
0
VGS (V)
I D (
A) 40
50
70
60
20
30
1.0 0 10 15 20
0.2
0
VGS (V)
VD
S (
V) 0.6
0.8
1.0
0.4
5 1 10 701
ID (A)
Re
(yfs
) (S
) 100
1000
10
10V5.5V5.0V
VGS = 4.5V
(Ta = 25ºC)(VDS = 10V)
(Ta = 25ºC)
Ta = 150°C25°C
–55°C
(ID = 35A)
ID = 70A
35A
(VDS = 10V)
Tc = –55°C25°C
150°C
Ciss
Coss
Crss
VGS = 0Vf = 1MHz
(Ta = 25ºC)
RDS (ON) L
IMITED
Dynamic I/O Characteristics (typ.)
100 150
Qg (nC)500
V DS
(V
)
Ta = 150°C25°C
–55°C
VDD = 8V12V14V16V24V
VDS
VGS
PT =1ms
PT =100µsP
T =10ms
PT =10µs
10
0
30
20
5
0
15
10V G
S (
V)
a) Part No.b) Lot No.
(Unit : mm)
a
b
j-c — Pw Characteristics (Single pulse)
VGS = 10VTa = 25ºC
VGS = 10VID = 35A
j-c
(º
C/W
)
113
Absolute Maximum Ratings Electrical Characteristics(Ta=25ºC) (Ta=25ºC)
MOS FET 2SK3803 (under development)
External Dimensions TO220S
Symbol Test ConditionsRatings
Unit
V(BR) DSS ID = 100µA, VGS = 0V 40
min typ max
IGSS µAµA
VGS = ±15V ±10IDSS
V
VDS = 40V, VGS = 0V 100VTH VDS = 10V, ID = 1mA 4.02.0
50RDS (ON)
Re (yfs)
mΩ
VS
nsV
VGS = 10V, ID = 42AVDS = 10V, ID = 42A
CossCiss VDS = 10V
f = 1.0MHzVGS = 0VCrss
trr
VSD ISD = 50A, VGS = 0VISD = 25A, di/dt = 50A/µs
2.1 3.0
td (on) nsID = 42A 90tr nsVDD = 20V, RG = 22Ω 230td (off) nsVGS = 10V 490tf ns760
pFpFpF
1050024001900
0.8590
1.2
Symbol Ratings UnitVDSS 40VGSS V
V±20±85
±170 ID AID (pulse)*1 A
100 (Tc=25ºC)PD
EAS*2
W730
Tstg ºC
mJTch 150 ºC
–55 to +150
10.2±0.3
1.27±0.2
2.54±0.52.54±0.5
1.2±0.2
1.6
10.0
8.6±0
.3(1
.4)
–0.5
+0.
3
3.0
–0.5
+0.
3
0.86 –0.1+0.2
4.44±0.2
1.3±0.2
0.4±0.1
(1.5
) 0.1–0.1+0.2
* 1: PW 100µs, duty cycle 1%* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped, RG = 50Ω
a) Part No.b) Lot No.
(Unit : mm)
a
b
114
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VDSS 60Symbol Test Conditions
RatingsUnit
V(BR) DSS ID = 100µA, VGS = 0V 60
min typ max
IGSS µAµA
VGS = ±20V ±10IDSS
S
V
VDS = 60V, VGS = 0V 100VTH VDS = 10V, ID = 1mA 3.02.52.0Re (yfs) VDS = 10V, ID = 42A 30RDS (ON) mΩ
V
nsnsnsnsVns
VGS = 10V, ID = 42A
CossCiss VDS = 10V
f = 1.0MHzVGS = 0VCrss
td (on) ID = 42AVDD 16VRG = 22ΩVGS = 10V
tr
trr
td (off)
tf
ISD = 50A, di/dt = 100A/µSVSD ISD = 50A, VGS = 0V
4.0 4.7pFpFpF
11500 15001100602537065
700.87 1.5
VGSS VV
±20±85
±280 ID AID (pulse)*1 A
150PD
EAS*2
W280
Tstg ºC
mJTch 150 ºC
–55 to +150
Absolute Maximum Ratings Electrical Characteristics
MOS FET 2SK3851
External Dimensions TO-3P
0 0.8 1.2 1.6 2.0
10
0
VDS (V)
I D (
A)
60
80
70
90
30
20
40
50
0.4
0 70 80 900
ID (A)
RD
S (O
N)
(mΩ
)
I DR
(A
)
1.0
5.0
7.0
6.0
8.0
5.0
4.0
3.0
2.0
1.0
0
6.0
4.0
3.0
2.0
20 30 40 50 6010
30 5040 60
VDS (V)
Cap
acita
nce
(pF
)
10000
1000
50000
50010 200 0.2 0.4 0.80.6 1.0 1.2 1.4
VSD (V)
30
20
10
0
70
60
50
40
80
90
0
PD
(W)
50 75 100 125 150
Tc (ºC)
20
0
40
140
120
100
80
60
160
250
ID — VDS Characteristics
RDS (ON) — ID Characteristics
Capacitance — VDS Characteristics IDR — VSD Characteristics
ID — VGS Characteristics VDS — VGS Characteristics Re (yfs) — ID Characteristics
PD — TC Characteristics
RDS (ON) — TC Characteristics
0 50 100 150
Tc (ºC)
RD
S (O
N)
(mΩ
)
–50–100 0.01 0.1 1 10
0.1
0.01
t (s)
10
1
0.0010.0001
0 32 4 5 6
VGS (V)
I D (
A)
80
100
40
20
0
60
1 0 8 10 12 14 16 18
VGS (V)
VD
S (
V)
1.0
0.6
0.8
0.4
0.2
04 62 1 10 50 100
10
1
ID (A)
Re
(yfs
) (S
)
100
500
5
10V
4.5V
VGS = 4.0V
(Ta = 25ºC) (Ta = 25ºC)(VDS = 10V) (VDS = 10V)
Ta = 150°C25°C
–55°C
–55°C25°C
150°C
(Ta = 25ºC)Ta = 25°C
VGS = 0Vf = 1MHz
Ciss
CossCrss
ID = 85A
ID = 42A
Ta = 150°C25°C
–55°C
(1) (2) (3)
15.8±0.2
1. Gate2. Drain3. Source
1.4
2
3
15.6±0.4
13.64.8±0.2
2.0±0.1
3.2±0.1
5.0±0
.2
9.6 1.8
20.0
min
4.0
max
19.9
±0.3
4.0
2.0
1.05+0.2–0.1 0.65
+0.2–0.1
5.45±0.1 5.45±0.1
* 1: PW 100µs, duty cycle 1%* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped
a) Part No.b) Lot No.
(Unit : mm)
a
b
VGS = 10VTa = 25ºC VGS = 10V
ID = 25A
j-c — t Characteristics (Single pulse)
j-c
(ºC
/W)
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VDSS 40Symbol Test Conditions
RatingsUnit
V(BR) DSS ID = 100µA, VGS = 0V 40
min typ max
IGSS µA
µA
VGS = +20V +10VGS = –10V –5
IDSS
S
V
VDS = 40V, VGS = 0V 100VTH VDS = 10V, ID = 250µA 2.3 1.3Re (yfs) VDS = 10V, ID = 25A 20.0RDS (ON) mΩ
V
nsnsnsnsV
VGS = 10V, ID = 25A
CossCiss VDS = 10V
f = 1.0MHzVGS = 0VCrss
td (on) ID = 25AVDD = 12VRL = 0.48ΩVGS = 10V
tr
td (off)
tf
VSD ISD = 50A, VGS = 0V
7 9pFpFpF
28001400600 206002501001.0 1.5
VGSS VV
+20, –10±60
±180 ID AID (pulse)* A
60 (Tc=25ºC)PD
TchW
150Tstg ºC
ºC–55 to +150
* PW 100µs, duty 1%
Absolute Maximum Ratings Electrical Characteristics
MOS FET FKV460S
115
a) Part No.b) Lot No.
(Unit : mm)
External Dimensions TO220S
a
b
10.2±0.3
1.27±0.2
2.54±0.52.54±0.5
1.2±0.2
1.6
10.0
8.6±0
.3(1
.4)
–0.5
+0.
3
–0.5
+0.
33.
0
0.86
4.44±0.2
1.3±0.2
0.4±0.1
(1.5
)
0.1–0.1+0.2
–0.1+0.2
0 2 3 4 5
10
0
VDS (V)
I D (
A)
ID — VDS Characteristics (typ.)
RDS (ON) — ID Characteristics
Capacitance — VDS Characteristics IDR — VSD Characteristics
ID — VGS Characteristics (typ.) VDS — VGS Characteristics (typ.) Re (yfs) — ID Characteristics
40
50
60
20
30
1
0 20 30 40 50 60
4.0
2.0
0
ID (A)
RD
S (O
N)
(mΩ
)
I DR
(A
)
12
14
6.0
10
8.0
10
20 30 35
VDS (V)
Cap
acita
nce
(pF
)
10000
1000
100100 0.4 0.6 0.8 1.0 1.2
VSD (V)
0
10
20
30
40
50
60
0.20
Safe Operating Area (single pulse)
I C (
A)
1 10 50
VDS (V)
0.1
1
10
100200
0.1
PD — TC Characteristics
PD
(W)
50 75 100 125 150
Tc (ºC)
0
10
20
50
40
30
60
70
250
RDS (ON) — TC Characteristics
0 50 100 150
4.0
2.0
0
Tc (ºC)
RD
S (O
N)
(mΩ
)
12
14
6.0
10
8.0
–50–60 0.01 0.1 1 10
0.1
0.01
t (s)
50
10
1
0.0010.0001
0 2 3 4
10
0
VGS (V)
I D (
A) 40
50
70
60
20
30
1 0 10 15 20
0.2
0
VGS (V)
VD
S (
V) 0.6
0.8
1.0
0.4
5 1 10 605
50
ID (A)
Re
(yfs
) (S
) 100
500
10
5
3.5V
10V5.0V4.0V
VGS = 3.0V
(Ta = 25ºC) (Ta = 25ºC)
(Ta = 25ºC) (Ta = 25ºC)
(VDS = 10V)
Ta = 150ºC25ºC
–55ºC
FR4 (70 •100 • 1.6mm)Use substrate
ID = 60A
25A
10A
(VDS = 10V)
–55ºC25ºC
150ºC
Ciss
Coss
Crss
VGS = 0Vf = 1MHz
5V
10V
VGS = 10V
(Ta = 25ºC)
ID(pulse) max PT=1msP
T=10msRDS(ON) L
IMITED
VGS = 10VTa = 25ºC VGS = 10V
ID = 25A
j-c • j-a — t Characteristics (Single pulse)
j-c
•
j-a
(ºC
/W) j-a
j-c
Absolute Maximum Ratings Electrical CharacteristicsSymbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VDSS 60Symbol Test Conditions
RatingsUnit
V(BR)DSS ID=100µA, VGS=0V 60
min typ max
IGSS µA
µA
VGS=+20VVGS=–10V
+10– 5
IDSS
S
V
VDS=60V, VGS=0V 100VTH VDS=10V, ID=250µA 2.51.0Re (yfs) VDS=10V, ID=25A 20RDS(ON) mΩ
V
nsnsnsnsV
VGS=10V, ID=25A
CossCiss VDS=10V
f=1.0MHzVGS=0VCrss
td(on) ID=25AVDD=12VRL=0.48ΩVGS=10V
tr
td(off)
tf
VSD ISD=50A, VGS=0V
11 14pFpFpF
2500900150 504004003001.0 1.5
VGSS VV
+20, –10±60
±180 ID AID(pulse) A
60(Tc=25ºC)PD
TchW
150Tstg ºC
ºC–40 to +150
MOS FET FKV660S
116
External Dimensions TO220S
a
b
10.2±0.3
1.27±0.2
2.54±0.52.54±0.5
1.2±0.2
1.6
10.0
8.6±0
.3(1
.4)
–0.5
+0.
3
3.0
0.86 –0.1+0.2
4.44±0.2
1.3±0.2
0.4±0.1
(1.5
)
0.1–0.1+0.2
a) Part No.b) Lot No.
(Unit : mm)
PW 100µs, duty 1%
–0.5
+0.
3
0 4 6 8 1210
20
0
VDS (V)
I D (
A)
ID — VDS Characteristics
RDS (ON) — ID Characteristics
IDR — VSD Characteristics
ID — VGS Characteristics VDS — VGS Characteristics Re (yfs) — ID Characteristics
120
140
160
180
80
60
40
100
2
100 200
ID (A)
RD
S (O
N)
(Ω)
I DR
(A
)
101
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD (V)
0
20
40
60
80
100
120
140
160
180
0.20
Safe Operating Area (single pulse)
I D (
A)
1 10 100
VDS (V)
0.1
1
10
100
500
0.1
RDS (ON) — TC Characteristics Capacitance — VDS Characteristics
0 50 100 150
0.010
0.005
0
Tc (ºC)
RD
S (O
N)
(Ω)
0.030
0.015
0.025
0.020
0.010
0.005
0
0.030
0.015
0.025
0.020
–50–60
0 2 3 6540.001
VGS (V)
I D (
A)
1
10
1000
100
0.01
0.1
1 0 10 15 20
0.2
0
VGS (V)
VD
S (
V)
0.6
0.8
1.0
1.2
1.4
0.4
5 1 10 2001001
ID (A)
Re
(yfs
) (S
) 100
1000
10
10V6V
VGS = 3.5V
4V
4.5V
(Ta = 25ºC) (Ta = 25ºC)
(Ta = 25ºC)
(VDS = 10V)
Ta = 150°C100°C
50°C25°C
0°C–55°C
(ID = 25A)
ID = 60A
25A
10A
(VDS = 10V)
–55°C25°C
150°C
(Ta = 25ºC)
ID (pulse) max
PT =1ms
PT =10msRDS (O
N) LIM
ITED
20 30 40 50
VDS (V)
Cap
acita
nce
(pF
)
10000
1000
100100
(Ta = 25ºC)
Ciss
Coss
Crss
VGS = 0Vf = 1MHz
VGS = 10V
VGS = 4V
VGS = 10V
VGS = 4V
VGS = 0VTa = 25ºC
Absolute Maximum Ratings Electrical CharacteristicsSymbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VDSS 52±5 Symbol Test Conditions
RatingsUnit
V(BR) DSS ID = 1mA, VGS = 0V 47 52 57
min typ max
IGSS µAµA
VGS = ±20V ±1.0
IDSS
S
V
VDS = 40V, VGS = 0V 100VTH VDS = 10V, ID = 250µA 2.51.81.0Re (yfs) VDS = 10V, ID = 1.0A 1.0
RDS (ON)ΩΩ
V
µsµsµsµsV
VGS = 10V, ID = 1.0AVGS = 4V, ID = 1.0A
CossCiss VDS = 10V
f = 1.0MHzVGS = 0VCrss
td (on) ID = 1AVDD 12VRL = 12ΩVGS = 5V
RG1 = 50Ω, RG2 = 10kΩ
tr
td (off)
tf
VSD ISD = 1A, VGS = 0V
0.2 0.25 0.25 0.3
pFpFpF
200120 20
2.07.43.34.21.0 1.5
VGSS VV
±20 ±3±6
ID AID (pulse) *1 A
3 (Tc=25ºC, 4 circuits operate)PT
EAS *2
Tch
W
150 40
Tstg ºCºCmJ
–55 to +150
*1 PW 100µs, duty 1%*2 VDD = 12V, L = 10mH, unclamped, RG = 10Ω
2
1
15 16
4
3
13 14
6
5
11 12
8
7
9 10
Surface-mount MOS FET Array SDK06
117
Equivalent Circuit Diagram
a) Part No.b) Lot No.
(Unit: mm)
a
b
20.0max
2.54±0.250.89±0.15
8.0±0
.5
6.3±0
.2
0 to
0.15
3.0±0
.2
0.25
9.8±0
.3
1.0±0
.3
19.56±0.2
6.8m
ax
0.75
0.3
16
Pin 1 8
9
4.0m
ax
3.6±0
.2
1.4±0
.2
External Dimensions SMD-16A
+0.15–0.05
+0.15–0.05
0 2 4 10 126 8 14
ID — VDS Characteristics
0
5
4
I D (
A)
VDS (V)
3
2
1
6
0.01
1
0.1
20
10
0 1 2 3 4 5 6
ID — VGS Characteristics
I D (
A)
VGS (V)
0 1 2 3 64 5
RDS (ON) — ID Characteristics
0
0.2R
DS
(ON
) (Ω
)
ID (A)
0.8
0.6
0.4
–50 0 50 100 150
RDS (ON) — TC Characteristics
0
0.1
0.3
0.2
0.4
RD
S (O
N)
(Ω)
Tc (ºC)
0.5
0.5 1 5 10 50
Safe Operating Area (single pulse)
0.5
0.1
1
5
I D (
A)
VDS (V)
10(Tc = 25ºC)
0.05 0.1 0.5 1 6
Re (yfs) — ID Characteristics
0.2
0.5
1
5
10
Re
(yfs
) (S
)
ID (A)
VGS = 3V
VGS = 4V
VGS = 5VVGS = 10V
VGS = 4Vtyp.
ID = 1A
VGS = 10Vtyp.
VDS = 10V
VDS = 10V
VGS = 4V
0 0.40.2 0.6 0.8 1.41.21.0
IDR — VSD Characteristics
0
8
6
4
2
I DR (
A)
VSD (V)
10
Ta = –55ºC25ºC75ºC
150ºC
10ms
1ms
100µs
ID (pulse) max
RDS (on)
LIM
ITED
Ta = –55ºC25ºC
150ºC
Ta = 150ºC75ºC25ºC
–55ºC
25ºC
Ta = 150ºC
75ºC
–55ºC
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VDSS 50Symbol Test Conditions
RatingsUnit
V(BR) DSS ID = 100µA, VGS = 0V 50
min typ max
IGSS nAµA
VGS = ±20V ±100
IDSS
S
V
VDS = 50V, VGS = 0V 100VTH VDS = 10V, ID = 1mA 2.3
13.0 1.89.0
1.3Re (yfs) VDS = 10V, ID = 4.0A 5.0
RDS (ON)ΩΩ
V
nsnsnsnsV
VGS = 10V, ID = 4.0AVGS = 4V, ID = 4.0A
CossCiss VDS = 10V
f = 1.0MHzVGS = 0VCrss
td (on) ID = 4AVDD 12V
RL = 3ΩVGS = 5VRG = 50Ω
tr
td (off)
tf
VSD ISD = 6A, VGS = 0V
0.07 0.08 0.09 0.1
pFpFpF
700300 90
50 80 60 401.0 1.5
VGSS VV
±20 ±4.5 ±9
ID AID (pulse) *1 A
4 (Tc=25ºC, 4 circuits operate)PT
EAS *2
Tch
W
150 80
Tstg ºCºCmJ
–55 to +150
*1 PW 100µs, duty 1%*2 VDD = 12V, L = 10mH, unclamped, RG = 50Ω
Absolute Maximum Ratings Electrical Characteristics
Surface-mount MOS FET Array SDK08
118
Equivalent Circuit Diagram
a) Part No.b) Lot No.
(Unit: mm)
a
b
20.0max
2.54±0.250.89±0.15
8.0±0
.5
6.3±0
.2
0 to
0.15
3.0±0
.2
0.25
9.8±0
.3
1.0±0
.3
19.56±0.2
6.8m
ax
0.75
0.3
16
Pin 1 8
9
4.0m
ax
3.6±0
.2
1.4±0
.2
External Dimensions SMD-16A
+0.15–0.05
+0.15–0.05
td (on)
0 159 12
2
0
VDS (V)
I D (
A)
ID — VDS Characteristics (typ.)
RDS (ON) — ID Characteristics
Capacitance — VDS Characteristics ISD — VSD Characteristics (typ.)
ID — VGS Characteristics VDS — VGS Characteristics (typ.) Re (yfs) — ID Characteristics
8
10
12
18
16
14
4
6
63
0 2 4 8 12106 0 2 4 8 12106
0.10
0.05
0
ID (A)
RD
S (O
N)
(Ω)
I SD
(A
)
0.15
0.20
0.10
0.05
0
0.15
0.20
0.10
0.05
0
0.15
0.20
10 100
VDS (V)
Cap
acita
nce
(pF
)
5000
100
10
1000
510.1 0.6 0.9 1.51.2
VSD (V)
0
1
2
3
4
5
8
7
6
0.30
PT — Ta Characteristics
PT
(W
)
50 100 150
Ta (ºC)
0
1
2
3
4
0
S/W TimeW — ID Characteristics
0.1 0.5 1 105
10
5
ID (A)
500
100
0 32 540.001
VGS (V)
I D (
A)
0.1
1
2010
0.01
1 0 4 6 108
0.2
0
VGS (V)
VD
S (
V)
0.6
0.8
1.4
1.0
1.2
0.4
2 0.05 10.1 100.1
ID (A)
Re
(yfs
) (S
) 10
100
1VGS = 3V
VGS = 4V
VGS = 10V
(ID = 4A)(VDS = 10V)
(VGS = 10V)
(Ta = 25ºC)
(Ta = 25ºC)
Ta = 150°C75°C25°C
0°C–55°C
S/W
Tim
e (n
s)
(VDS = 10V)
Ta = 150°C25°C
–55°C
Ciss
Coss
Crss
VGS = 0Vf = 1MHz
Ta = 150°C75°C25°C
0°C–55°C
Ta = 150°C75°C25°C0°C
–55°C
4 circuits operate3 circuits operate2 circuits operate1 circuits operate
RDS (ON) — TC Characteristics (typ.)
0 50 100 150
Tc (ºC)
RD
S (O
N)
(Ω)
–50–60
(ID = 4A)
Ta = 150°C75°C25°C0°C
–55°C
RDS (ON) — ID Characteristics
ID (A)
RD
S (O
N)
(Ω)
(VGS = 4V)
Ta = 150°C
75°C
25°C0°C
–55°C
VGS = 4V
VGS = 10V
tr
t f
td (off)
(Ta = 25ºC)
VDD = 12V constantRGS = 50ΩVGS = 5V
1
15 16
2
3
13 14
4
5
11 12
6
7
9 10
8
(single pulse)
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VDSS 120Symbol Test Conditions
RatingsUnit
V(BR) DSS ID=100µA, VGS=0V 120
min typ max
IGSS µAµA
VGS=±20V ±5
IDSS
S
V
VDS=120V, VGS=0V 100VTH VDS=10V, ID=250µA 2.01.0Re (yfs) VDS=10V, ID=4A 5.0
RDS (ON) Ω
V
nsnsnsnsV
VGS=10V, ID=4AVGS=4V, ID=4A
CossCiss VDS=10V
f=1.0MHzVGS=0VCrss
td (on) ID=4AVDD=12VRL=3ΩVGS=5VRG=50Ω
tr
td (off)
tf
VSD ISD=6A, VGS=0V
0.15 0.2 0.2 0.25
pFpFpF
400130 30
1003002502001.0 1.5
VGSS VV
±20 ±6±10
ID AID (pulse)*1 A
3 (Tc=25ºC, 4 circuits operate)PT
Tch
W
150Tstg ºC
ºC–55 to +150
80EAS *2 mJ
Absolute Maximum Ratings Electrical Characteristics
1
15 16
2
3
13 14
4
5
11 12
6
7
9 10
8
Surface-mount MOS FET Array SDK09
119
Equivalent Circuit Diagram
a) Part No.b) Lot No.
(Unit: mm)
a
b
20.0max
2.54±0.250.89±0.15
8.0±0
.5
6.3±0
.2
0 to 0
.153.
0±0.2
0.25
9.8±0
.3
1.0±0
.3
19.56±0.2
6.8m
ax
0.75
0.3+0.15–0.05
+0.15–0.05
16
Pin 1 8
9
4.0m
ax
3.6±0
.2
1.4±0
.2
External Dimensions SMD-16A
0 1 2 53 4 6
ID — VDS Characteristics
0
12
I D (
A)
VDS (V)
8
4
16
0
8
6
4
2
10
0 1.0 2.0 3.0 4.0
ID — VGS Characteristics
I D (
A)
VGS (V)
0 2 4 86 10
RDS (ON) — ID Characteristics
0
0.10
0.05R
DS
(ON
) (Ω
)
ID (A)
0.30
0.25
0.20
0.15
–50 0 50 100 150
RDS (ON) — TC Characteristics
0
0.10
0.30
0.20
0.40
RD
S (O
N)
(Ω)
Tc (ºC)
0.45
0 10 20 30 40 50
Capacitance — VDS Characteristics
10
50
100
500
Cap
acita
nce
(pF
)
VDS (V)
1000
1 5 10 50 100 200
Safe Operating Area (single pulse)
0.5
0.1
10
1
5
I D (
A)
VDS (V)
20(Ta = 25ºC)
0.05 0.1 0.5 1 5 10
Re (yfs) — ID Characteristics
0.1
0.5
1
5
10
50
Re
(yfs
) (S
)
ID (A)
VGS=4.5V
VGS=10V
VGS=4VID=4A
VGS=10V
VGS=0Vf=1MHz
Coss
Ciss
Crss
VDS=10V
0 0.40.2 0.6 0.8 1.21.0
IDR — VSD Characteristics
0
5
4
3
2
1
I DR
(A
)
VSD (V)
6
VGS=4V
VGS=10VTa=–55ºC25ºC75ºC
150ºC
100ms
10ms
1ms
100µs
ID (pulse) max
ID (DC) max
RDS (on) LIMITED
Ta=–55ºC25ºC75ºC
150ºC
Ta=150ºC75ºC25ºC
–55ºC
VGS=0V
*1 PW 100µs, duty 1%*2 VDD = 12V, L = 10mH, unclamped, RG = 50Ω
0 1 2 3 4 5 6
ID — VDS Characteristics
0
4
8
I D (
A)
VDS (V)
6
2
10
0 1 2 3 4
ID — VGS Characteristics
0
4
6
10
I D (
A)
VGS (V)
8
2
12
0.1 1 10 20
RDS (ON) — ID Characteristics
0
0.05
RD
S (o
n)
(Ω)
ID (A)
0.1
–50 0 50 100 150
RDS (ON) — TC Characteristics
0.02
0.06
0.10
RD
S (O
N)
(Ω)
Tc (ºC)
0.12
1 5 10 50
Capacitance — VDS Characteristics
50
500
100
1000
Cap
acita
nce
(pF
)
VDS (V)
2000
0.5 1 5 10 10050
Safe Operating Area (single pulse)
0.5
10
1
5
I D (
A)
VDS (V)
50(Ta = 25ºC)
0.4 1 5 10 20
Re (yfs) — ID Characteristics
2
5
10
Re
(yfs
) (S
)
ID (A)
30
4V5V
10V
VGS = 3V
VGS = 4V VDS = 10V
VGS = 10V
VGS = 0Vf = 1MHz
Coss
Ciss
Crss
VDS = 10V
0 0.4 0.8 1.2
IDR — VSD Characteristics
0.1
5
10
I DR (
A)
VSD (V)
1
0.5
20
VGS = 0V
VGS = 4V
VGS = 10VTa = 150ºC75ºC25ºC
–55ºC
100ms
10ms
1ms
0.5ms
ID (pulse) max
ID (DC) max
RDS (on
) LIM
ITED
Assum
ed VGS =
4V lin
e
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VDSS 60Symbol Test Conditions
RatingsUnit
V(BR) DSS ID = 100µA, VGS = 0V 60
min typ max
IGSS µAµA
VGS = ±20V ±100
IDSS
S
V
VDS = 60V, VGS = 0V 100VTH VDS = 10V, ID = 1mA 2.01.5
12.0 1.0
Re (yfs) VDS = 10V, ID = 8A 6.0RDS (ON) Ω
V
nsnsnsnsV
VGS = 4V, ID = 8A
CossCiss VDS = 10V
f = 1.0MHzVGS = 0VCrss
td (on) ID = 8AVDD 30VRL = 3.75ΩVGS = 5VRG = 50Ω
tr
td (off)
tf
VSD ISD = 10A, VGS = 0V
0.07 0.08pFpFpF
1100 500170
502502501801.0 1.5
VGSS
j-c
VISO
VV
±20±12±48
ID AID (pulse)*1 A
5 (Ta=25ºC, 4 circuits operate)
60 (Tc=25ºC,4 circuits operate)PT
EAS*2
Tch
WW
Vrms150
2502.08
(Fin to lead terminal) AC1000
Tstg ºCºC
ºC/WmJ
–55 to +150
*1 PW 250µs, duty 1%*2 VDD = 30V, L = 10mH, unclamped, RG = 50Ω
Absolute Maximum Ratings Electrical Characteristics
1
3
2
4
6
5
8
7
9
11
10
12
MOS FET Array SLA5027
120
1 2 3
11•P2.54±0.7=27.94±1.0
31.5 max
0.851.2±0.15
31.0±0.2
24.4±0.2
16.4±0.2
3.2±0.15
0.55 2.2±0.7
1.7±0.14.8±0.2
1.45±0.15
Pin 1 12
4 5 6 7 8 9 10 11 12
8.5
max
9.5
min
(10.
4)
9.9±0
.2
13.0
±0.2
16.0
±0.2
2.7
a) Part No.b) Lot No.
(Unit: mm)
External Dimensions SLA 12pin (LF800)
Equivalent Circuit Diagram
ab
+0.2–0.1
+0.2–0.1
Ellipse 3.2±0.15 • 3.8
Lead
pla
te th
ickn
ess
resi
ns 0
.8m
ax
MOS FET Array SLA5098 (under development)
121
Symbol Ratings Unit
(Ta=25ºC) (Ta=25ºC)
VDSS 40Symbol Test Conditions
RatingsUnit
V(BR) DSS ID = 100µA, VGS = 0V 40
min typ max
IGSS µAµA
VGS = ±15V ±10IDSS
S
V
VDS = 40V, VGS = 0V 100VTH VDS = 10V, ID = 250µA 2.51.5Re (yfs) VDS = 10V, ID = 10A
VGS = 10V, ID = 10A10
RDS (ON) mΩ
V
nsnsnsnsV
ns
CossCiss VDS = 10V
f = 1.0MHzVGS = 0VCrss
td (on) ID = 10AVDD = 14VRL = 1.4ΩVGS = 10VRG = 50Ω
tr
trr
td (off)
tf
VSD ISD = 10A, VGS = 0V
ISD = 10A, VGS = 0Vdi/dt = 100A/µs
17pFpFpF
145042026040402001000.85
45
1.2
VGSS VV
±202040
ID AID (pulse)* A
5PT
Tch
W
W
150Tstg ºC
ºC–55 to +150
IAS To be defined A
EAS To be defined mJ
Electrical CharacteristicsAbsolute Maximum Ratings
5
2
4
1
3
Equivalent Circuit Diagram
External Dimensions STA4 (LF412)
10
7
9
6
8
15
12
14
11
13
1 2 3
14•P2.03±0.4= 28.42±0.8
31.5 max
0.651.2±0.15
31.0±0.2
24.4±0.2
16.4±0.2
3.2±0.1
0.55 2.2±0.7
1.7±0.14.8±0.2
1.15
Pin 1 15
4 5 6 7 8 9 10 11 12 13 14 15
8.5
max
9.5
min
(10.
4)
9.9±0
.2
13.0
±0.2
16.0
±0.2
2.7
+0.2–0.1
+0.2–0.1
+0.2–0.1
* PW 100µs, duty 1%
a) Part No.b) Lot No.
(Unit: mm)
ab
Without heatsink, Ta=25°C, (All circuits operate ) Tc=25°C, (All circuits operate)90
Ellipse 3.2±0.1 • 3.8
Lead
pla
te th
ickn
ess
resi
ns 0
.8m
ax
Absolute Maximum Ratings Electrical Characteristics
0 5 10 15 20
ID — VDS Characteristics
0
5
6
I D (
A)
VDS (V)
4
3
2
1
7
0
5
6
4
3
2
1
7
0 2 4 6 8 10
ID — VGS Characteristics
I D (
A)
VGS (V)
0 1 2 3 4 5 6 7
RDS (ON) — ID Characteristics
0
1.0
0.5RD
S (O
N)
(Ω)
ID (A)
1.5
–50 0 50 100 150
RDS (ON) — TC Characteristics
0
1.0
0.5
2.0
1.5
RD
S (O
N)
(Ω)
Tc (ºC)
2.5
0 10 20 30 40 50
Capacitance — VDS Characteristics
20
50
100
500
Cap
acita
nce
(pF
)
VDS (V)
1000
3 5 10 50 100 500
Safe Operating Area (single pulse)
0.5
0.1
0.05
10
1
5
I D (
A)
VDS (V)
50(Ta = 25ºC)
0.05 0.1 0.5 1 7
Re (yfs) — ID Characteristics
2
5
10
50
Re
(yfs
) (S
)
ID (A)
100
5.5V
5V
VGS = 4.5V
ID = 3.5AVDS = 20VVGS = 10V
VGS = 0Vf = 1MHz
Coss
Ciss
Crss
VDS = 20V
0 0.40.2 0.6 0.8 1.0
IDR — VSD Characteristics
0
5
4
3
2
1
6
I DR
(A
)
VSD (V)
7
VGS = 0V
VGS = 10V
Ta = –55ºC25ºC
150ºC
100ms
10ms
1ms
100µs
ID (pulse) max
ID (DC) max
RDS (on) L
IMITED
10V
Ta = –55ºC25ºC
150ºC
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VDSS 450Symbol Test Conditions
RatingsUnit
V(BR) DSS ID = 100µA, VGS = 0V 450
min typ max
IGSS nAµA
VGS = ±30V ±100
IDSS
S
V
VDS = 450V, VGS = 0V 100VTH VDS = 10V, ID = 1mA 4.0
5.02.0
Re (yfs) VDS = 20V, ID = 3.5A 3.5RDS (ON) Ω
V
nsnsnsnsV
VGS = 10V, ID = 3.5A
CossCiss VDS = 10V
f = 1.0MHzVGS = 0VCrss
td (on) ID = 3.5AVDD 200V
RL = 57ΩVGS = 10VRG = 50Ω
tr
td (off)
tf
VSD ISD = 7A, VGS = 0V
0.84 1.1pFpFpF
720150 65
25 40 70 501.0 1.5
VGSS
j-a
j-c
IAS
VV
±30±7
±28ID AID (pulse) *1 A
A
4 (Ta=25ºC, All circuits operate, No Fin)
35 (Tc=25ºC, All circuits operate, ∞ Fin)PT
EAS *2
Tch
WW
150
130 7
31.2
3.57
Tstg ºCºC
ºC/W
ºC/W
mJ
–55 to +150
*1 PW 100µs, duty 1%*2 VDD = 30V, L = 5mH, IL = 7A, unclamped, RG = 50Ω
MOS FET Array SMA5113
122
Equivalent Circuit Diagram
Junction - Ambientare, Ta=25ºC, All circuits operate
Junction - Case, Ta=25ºC, All circuits operate
0.85
31.5 max
a
b
31.0±0.24.0±0.2
2.5±0.2
1.46±0.15
1.21±0.15
11•P2.54±0.1=27.94
10.2
±0.2
2.4
(10.
4)
0.55 1.2±0.1
30º
1 2 3 4 5 6 7 8 9 10 11 12a) Part No.b) Lot No.
(Unit: mm)
External Dimensions SMA (LF1000)
+0.2–0.1 +0.2
–0.1
1
3
2
4
6
5
8
7
9
11
10
12
(Including both-side resin burr)
0 1 2 53 4 6
ID — VDS Characteristics
0
12
I D (
A)
VDS (V)
8
4
16
0
8
6
4
2
10
0 1.0 2.0 3.0 4.0
ID — VGS Characteristics
I D (
A)
VGS (V)
0 2 4 86 10
RDS (ON) — ID Characteristics
0
0.10
0.05R
DS
(ON
) (Ω
)
ID (A)
0.30
0.25
0.20
0.15
–50 0 50 100 150
RDS (ON) — TC Characteristics
0
0.10
0.30
0.20
0.40
RD
S (O
N)
(Ω)
Tc (ºC)
0.45
0 10 20 30 40 50
Capacitance — VDS Characteristics
10
50
100
500
Cap
acita
nce
(pF
)
VDS (V)
1000
1 5 10 50 100 200
Safe Operating Area (single pulse)
0.5
0.1
10
1
5
I D (
A)
VDS (V)
20(Ta = 25ºC)
0.05 0.1 0.5 1 5 10
Re (yfs) — ID Characteristics
0.1
0.5
1
5
10
50
Re
(yfs
) (S
)
ID (A)
VGS = 4.5V
VGS = 10V
VGS = 4VID = 4A
VGS = 10V
VGS = 0Vf = 1MHz
Coss
Ciss
Crss
VDS = 10V
0 0.40.2 0.6 0.8 1.21.0
IDR — VSD Characteristics
0
5
4
3
2
1
I DR
(A
)
VSD (V)
6
VGS = 4V
VGS = 10VTa = –55ºC25ºC75ºC
150ºC
100ms
10ms
1ms
100µs
ID (pulse) max
ID (DC) max
RDS (on) LIMITED
Ta = –55ºC25ºC75ºC
150ºC
Ta = 150ºC75ºC25ºC
–55ºC
VGS = 0V
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VDSS 120Symbol Test Conditions
RatingsUnit
V(BR) DSS ID = 100µA, VGS = 0V 120
min typ max
IGSS µAµA
VGS = ±20V ±5
IDSS
S
V
VDS = 120V, VGS = 0V 100VTH VDS = 10V, ID = 250µA 2.01.0Re (yfs) VDS = 10V, ID = 4.0A
VGS = 10V, ID = 4.0A5.0
RDS (ON)ΩΩ
V
nsnsnsnsV
VGS = 4V, ID = 4.0A
CossCiss VDS = 10V
f = 1.0MHzVGS = 0VCrss
td (on) ID = 4AVDD 12V
RL = 3ΩVGS = 5VRG = 50Ω
tr
td (off)
tf
VSD ISD = 6A, VGS = 0V
0.150.2
0.2 0.25
pFpFpF
400130 301003002502001.0 1.5
VGSS VV
±20 ±6±10
ID AID (pulse)*1 A
4 (Ta = 25ºC)20 (Tc = 25ºC)
PT
EAS *2
Tch
WW
150 80
Tstg ºCºCmJ
–55 to +150
*1 PW 100µs, duty 1%*2 VDD = 12V, L = 10mH, unclamped, RG = 50Ω
Electrical CharacteristicsAbsolute Maximum Ratings
2
1
3
4
5
6
7
8
9
10
MOS FET Array STA508A
123
Equivalent Circuit Diagram
a) Part No.b) Lot No.
(Unit: mm)
9•2.54=22.86±0.05
ab
(2.54)
25.25±0.2
9.0±0
.2
2.3±0
.2
11.3
±0.2
3.5±0
.5
0.5±0.15
0±0.31.0±0.25
C1.5±0.5
4.0±0
.2
0.5±0
.15
1.2±0
.2
1 32 4S G D G
5 6 7 10D G D S
8 9G D
0±0.3
External Dimensions STA4 (LF412)
0 2 4 10 126 8 14
ID — VDS Characteristics
0
5
4
I D (
A)
VDS (V)
3
2
1
6
0.01
1
0.1
20
10
0 1 2 3 4 5 6
ID — VGS Characteristics
I D (
A)
VGS (V)
0 1 2 3 64 5
RDS (ON) — ID Characteristics
0
0.2R
DS
(ON
) (Ω
)
ID (A)
0.8
0.6
0.4
–50 0 50 100 150
RDS (ON) — TC Characteristics
0
0.1
0.3
0.2
0.4
RD
S (O
N)
(Ω)
Tc (ºC)
0.5
0.5 1 5 10 50
Safe Operating Area (single pulse)
0.5
0.1
1
5
I D (
A)
VDS (V)
10(Tc = 25ºC)
0.05 0.1 0.5 1 6
Re (yfs) — ID Characteristics
0.2
0.5
1
5
10
Re
(yfs
) (S
)
ID (A)
VGS = 3V
VGS = 4V
VGS = 5VVGS = 10V
VGS = 4Vtyp.
ID = 1A
VGS = 10Vtyp.
VDS = 10V
VDS = 10V
VGS = 4V
0 0.40.2 0.6 0.8 1.41.21.0
IDR — VSD Characteristics
0
8
6
4
2
I DR (
A)
VSD (V)
10
Ta = –55ºC25ºC75ºC
150ºC
10ms
1ms
100µs
ID (pulse) max
RDS (on)
LIM
ITED
Ta = –55ºC25ºC
150ºC
Ta = 150ºC75ºC25ºC
–55ºC
25ºC
Ta = 150ºC
75ºC
–55ºC
Symbol Ratings Unit(Ta=25ºC) (Ta=25ºC)
VDSS 52±5Symbol Test Conditions
RatingsUnit
V(BR) DSS ID = 1mA, VGS = 0V 47 52 57
min typ max
IGSS µAµA
VGS = ±20V ±1.0
IDSS
S
V
VDS = 40V, VGS = 0V 100VTH VDS = 10V, ID = 250µA 2.51.0Re (yfs) VDS = 10V, ID = 1.0A
VGS = 10V, ID = 1.0A1.0
RDS (ON)ΩΩ
V
µsµsµsµsV
VGS = 4V, ID = 1.0A
CossCiss VDS = 10V
f = 1.0MHzVGS = 0VCrss
td (on) ID = 1AVDD 12VRL = 12ΩVGS = 5V
RG1 = 50Ω, RG2 = 10Ω
tr
td (off)
tf
VSD ISD = 6A, VGS = 0V
0.2 0.25
0.250.3
pFpFpF
200120 202.07.43.34.21.0 1.5
VGSS VV
±20 ±3 ±6
ID AID (pulse) *1 A
4 (Ta = 25ºC)20 (Tc = 25ºC)
PT
EAS *2
Tch
WW
150 40
Tstg ºCºCmJ
–55 to +150
*1 PW 100µs, duty 1%*2 VDD = 12V, L = 10mH, unclamped, RG = 10Ω
Electrical CharacteristicsAbsolute Maximum Ratings
2
1
3
4
5
6
7
8
9
10
MOS FET Array STA509A
124
Equivalent Circuit Diagram
External Dimensions STA
a) Part No.b) Lot No.
(Unit: mm)
9•2.54=22.86±0.05
ab
(2.54)
25.25±0.2
9.0±0
.2
2.3±0
.2
11.3
±0.2
3.5±0
.5
0.5±0.15
0±0.31.0±0.25
C1.5±0.5
4.0±0
.2
0.5±0
.15
1.2±0
.2
1 32 4S G D G
5 6 7 10D G D S
8 9G D
0±0.3
Measurement circuit
Current waveform (1cycle)
External Dimensions (unit: mm)
Thyristor with built-in reverse diode for HID lamp ignition TFC561D
Features
Repetitive peak off-state voltage: VDRM=600V Repetitive peak surge on-state current: ITRM=430A Critical rate-of-rise of on-state current: di/dt=1200A/µs Gate trigger current: IGT=20mA max With built-in reverse diode
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Repetitive peak off-state voltage
Repetitive surge peak on-state current
Critical rate-of-rise of on-state current
Average gate power loss
Peak reverse gate voltage
Diode repetitive peak surge forward current
Junction temperature
VDRM
ITRM
di/dt
IFGM
PGM
PG (AV)
VRGM
IFRM
Tj
Tstg
V
A
Tj=–40 to +125°C,
RGK=1kΩ
A/µs
W
W
V
A
ºC
600
430
1200
Peak forward gate current
Peak gate power loss
A2.0
5.0
0.5
5
240
–40 to +125
Storage temperature
VD 430V, 100kcycle,
Wp=1.3µs, Ta=125°C
f 50Hz, duty 10%
f 50Hz, duty 10%
f 50Hz
VD 430V, 100kcycle,
Wp=1.3µs, Ta=125°C
ºC–40 to +125
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
(Tj=25ºC)
VTM
VD=6V, RL=10Ω
VD=6V, RL=10Ω
IT=10A
10.0
1.4 V
20
1.5
mA
VVGT
IGT
VD=480V, Tj=125ºC
RG–K=1kΩ, Tj=25ºC
VVGD
mAIH
VD=VDRM, RG–K=1kΩ, Tj=25ºC
VD=VDRM, RG–K=1kΩ, Tj=125ºC
Junction to case
IF=10A
100
1
1.4
4.0
µAIDRM (1)
Off-state current (2)
Off-state current (1)
Holding current
Gate non-trigger voltage
Gate trigger current
Gate trigger voltage
On-state voltage
mAIDRM (2)
0.1
Thermal resistance ºC/WRth
2
Diode forward voltage VVF
(1). Cathode(K)(2). Anode (A)(3). Gate (G)
10.2±0.3
1.2±0.2
1.27±0.22.59±0.2
1.3±0.2
4.44±0.2
0.86
0.76±0.1
0.4±0.12.54±0.5
11.0
±0.5
2.54±0.5
8.6±0
.3
11.3
±0.5
(1.4
)
+0.2–0.1
10.0
+0.
3–0
.5
(1) (2) (3)
VD G1
G2
C
L
Sample
(Ta=25ºC)
100A
/div
2µs/div
*
*
*
Weight: Approx. 1.5g
* The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to cool down the junction temperature of the device to 125°C. This process shall be repeated up to 100K cycles.
125
126
Current waveform (1cycle)
External Dimensions (unit: mm)
Thyristor with built-in reverse diode for HID lamp ignition TFC562D
Features
Repetitive peak off-state voltage: VDRM=600V Repetitive peak surge on-state current: ITRM=600A Critical rate-of-rise of on-state current: di/dt=1600A/µs Gate trigger current: IGT=20mA max With built-in reverse diode
Parameter Symbol Unit ConditionsRatings
Absolute Maximum Ratings
Repetitive peak off-state voltage
Repetitive surge peak on-state current
Critical rate-of-rise of on-state current
Average gate power loss
Peak reverse gate voltage
Diode repetitive peak surge forward current
Junction temperature
V
A
Tj = –40 to +125°C,
RGK = 1kΩ
A/µs
W
W
V
A
ºC
600
600
1600
Peak forward gate current
Peak gate power loss
A2
5
0.5
5
460
–40 to +125
Storage temperature
Ta = 100°C, VD 430V, WP = 1.05µs, IG = 70mA, dig/dt = 0.5A/µs, 100kcycle*, See the examples of current waveforms
f 50Hz, duty 10%
f 50Hz, duty 10%
f 50Hz
Ta = 100°C, VD 430V, WP = 1.05µs, 100kcycle*, See the examples of current waveforms
ºC–40 to +125
Electrical Characteristics
Parameter Symbolmin typ max
Unit ConditionsRatings
(Tj=25ºC)
VTM
VD = 6V, RL = 10Ω
VD = 6V, RL = 10Ω
IT = 10A
5
1.4 V
20
1.5
mA
VVGT
IGT (1)
VD = 480V, Tj = 125°C
RG–K = 1kΩ, Tj = 25°C
VVGD
mAIH
VD = VDRM, RG–K = 1kΩ, Tj = 25°C
VD = VDRM, RG–K = 1kΩ, Tj = 125°C
Junction to case, With infinite heatsink
IF = 10A
10
1
1.4
4.0
µAIDRM (1)
Off-state current (2)
Off-state current (1)
Holding current
Gate non-trigger voltage
Gate trigger current
Gate trigger voltage
On-state voltage
mAIDRM (2)
0.1
Thermal resistance °C/WRth
2
Diode forward voltage VVF
1.34+0.2–0.1
10.5
+0.
3–
0.5
+0.2–0.10.86
0.76±0.1
4.44±0.2
1.3±0.2
2.6±0.2
11.0
±0.5
9.1±
0.3
(2.6
9)
(0.4
5)
(1.4
)( 1
.8)
2.54±0.1
10.2±0.3
2.54±0.1 0.4±0.1
(Root dimension)
(Root dimension)
(Root dimension)
2 31
(5)
a
b
* A single cycle operation consists of a continuous impression of 50 rounds with period T = 10ms followed by a rest time for the junction temperature of the element to cool down to 100°C (= Ta). Repeat this cycle operation.
(Ta=100ºC)
H: 2µs/div
V: 2
00A
/div
VDRM
ITRM
di/dt
IFGM
PGM
PG (AV)
VRGM
IFRM
Tj
Tstg
* The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to cool down the junction temperature of the device to 125°C. This process shall be repeated up to 100K cycles.
Absolute maximum ratings Electrical Characteristics
Part No.
200 20 –40 to +150200 1.10 20 0.25 1
200 35 –40 to +150350 1.10 35 0.25
—
—
—
—
SG-9CNSSG-9CNR
200 30 –40 to +150300 1.10 30 0.252
— —SG-9LCNSSG-9LCNRSG-9LLCNSSG-9LLCNR
200 30 –40 to +150300 1.2 100 0.25 — —SG-10LSSG-10LR
150 35 –40 to +150350 1.05 100 0.253
— —SG-10LXSSG-10LXR
200 40 –40 to +150400 1.05 100 0.25 — —SG-10LLSSG-10LLR
150 45 –40 to +150450 1.0 100 0.25 — —SG-10LLXSSG-10LLXR
R type S type
Polarity
S type R type
Polarity
Fig. 1 Fig. 2
Rectifier Diodes for Alternators
127
External Dimensions (unit: mm)
Fig. 3 Fig. 4
17 20 –40 to +200200 1.10 20 0.05 123±3 10SG-9CZSSG-9CZR
17 35 –40 to +200350 1.10 35 0.05 223±3 10SG-9LLCZSSG-9LLCZR
17 30 –40 to +150300 1.2 100 0.053
23±3 10SG-10LZ23SSG-10LZ23R
17 40 –40 to +150400 1.05 100 0.05 23±3 10SG-10LLZ23SSG-10LLZ23R
16 35 –40 to +200350 1.15 100 0.05 422±3 100SG-14LXZSSG-14LXZR
(ºC)
TstgTj
Normal Type
Zener Type
12.84
1.26
9.0
11.5
S :
20.5
R :
28.5
10m
ax8m
ax4.
74.
00.
3
5.0
10.7
10.0
13.5
24.0
2
(4°)
(1.5
)
(2)
(5.8
)
(45°)(30°)
0.41.01.4
4.40.6
2.0
2.5R1.2
3.04.25.0
3.6
VRM
(V)IF (AV)
(A)IFSM
(A)
VF(V)
max
IR(mA)max
VZ
(V)
Fig. No.
IF (A)
IF (A)
Condition ConditionIZ (mA)
Absolute maximum ratings Electrical Characteristics
Part No.(ºC)
TstgTjVRM
(V)IF (AV)
(A)IFSM
(A)
VF(V)
max
IR(mA)max
VZ
(V)
Fig. No.Condition Condition
IZ (mA)
3.1±0.1
S: 1
9.0±1
.0
R: 2
3.0±1
.0
8.4±0.2
7.0±0.2
1.5
5±0.4
11.
2
S type R type
Polarity
S type R type
Polarity
3.1±0.1 S: 1
9.0±1
.0
R: 2
3.0±1
.0
8.4±0.2
9.5±0.2
1.5
(R0.5)
5±0.4 1
1.2
Absolute Maximum Ratings Electrical Characteristics (Ta=25ºC)
VRM
(kV)
IF (AV)(mA)50 Hz
half-wavesignal
average
IRSM(mA)
Peak value ofsingle shot
triangular wavewith 100µshalf-power bandwidth
IRSM(A)
Peak valueof 50 Hz half-wave
signal
VF(V)
max
Vz(kV)
IR=100µA
IR(µA)
VR=VRMmax
ConditionIF (mA)
Fig.No.
Tj Tstg
(ºC)
SHV-05J 2.5 30 30 3 –40 to +150 5 1010 2.6 to 5.0
SHV-01JN 0.5 30 30 3 1 0.55 to 1.0
1
2
SHV-06JN 3.0 30 10 3 6 3.2 to 6.0 2
27min
5±0.2
0.5
C0.5
C0.5
2.5±0.2
27min 27min 6.5
0.5 2.5±0.2
27min
Part No.
High-voltage Diodes for Igniters
128
External Dimensions (unit: mm)
Fig. 1 (SHV-05J) Fig. 2 (SHV-06JN)
129
Power Zener Diode
–40 to +150
–55 to +150
–55 to +150
–55 to +150
–55 to +150
–55 to +150
–40 to +150
–55 to +175
–55 to +175
–55 to +175
–55 to +175
Absolute Maximum Ratings Electrical Characteristics
PR
(W)VDC
(V)IZSM
(A) ConditionIZ (mA)
IRVR=VDC
(µA)max
TstgTj VZ (V)1mA
instantaneouscurrent
Part No. Remarks
Surface-mount type
Axial type
Surface-mount type
(ºC)
SFPZ-68
SJPZ-K28 *
SJPZ-E18 *
SJPZ-E27 *
SJPZ-E33 *
SJPZ-E36 *
PZ628
SZ-10N27
SZ-10N40 *
SZ-10NN27
SZ-10NN40 *
50(5ms)
85(500µs)
1500(5ms)
—
—
—
—
20
20
13
20
25
27
20
22
22
22
22
2
2
—
—
—
—
65*1
70*1
40*1
90*1
55*1
25.0 to 31.0
25.0 to 31.0
16.8 to 19.1
25.1 to 28.9
31.0 to 35.0
34.0 to 38.0
25.0 to 31.0
24 to 30
36 to 40
24 to 30
36 to 40
1
1
1
1
1
1
10
10
10
10
10
10
10
10
10
10
10
50
10
10
10
10
1
2
2
2
2
2
3
4
4
4
4
P(W)
1
1
1
1
1
1
5
5
5
6
6
(Ta=25ºC)
Fig. 1
Fig. 3 Fig. 3
Fig. 2
External Dimensions (unit: mm)
*1: IZSM conditions
IRSM
IRSM
2
0 10ms Time
8.5±0.5
5±0.3
2±0.3
2.7±0.3
3±0.57.2±0.5
10±0.3
10±0
.3
13.5
±0.3
15.5
±0.5 (9
.75)
2.0±
0.5
* under development
+0.4–0.15.0
+0.
1–0
.05
0.05
1.3±0.4 1.5±0.2
2.15
±0.2
2.6±
0.2
4.5±0.2
1.3±0.4
Fig.No.
56.0
1.3 ±0.05
±0.2
±0.7
±0.0
2
10.0
C2
10.0
Cathode marking
4.5 ±0.2
±0.2
±0.2
±0.2±0.4±0.4
±0.2
0.05
2.0min1.35 1.35
5.1+0.4–0.1
2.6
2.05
1.1
1.5
130
VRM
(V)IF (AV)
(A)
IFSM(A)
Peak valueof 50 Hz half-wave
signal
Peak valueof 50 Hz half-wave
signal
Peak valueof 50 Hz half-wave
signal
VF
(V)max
Tstg(ºC)
Rth (j-l)
(°C/W)Weight
(g)Tj
(ºC)
IR(µA)
VR=VRMmax
Part No.ConditionIF (A)
SFPM-52
SFPM-62
SFPM-54
SFPM-64
200
400
0.9
1.0
0.9
1.0
30
45
30
45
1.0
0.98
1.0
0.98
1.0
1.0
1.0
1.0
ConditionTa (°C)
100
100
100
100
10
10
10
10
IR (H)(mA)
PackageVR=VRM
max
50
50
50
50
–40 to +150
Surface-mountRectifier Diodes
General-purpose Diodes
20
20
20
20
1
1
1
1
0.072
0.072
0.072
0.072
VRM
(V)IF (AV)
(A)
IFSM(A) VF
(V)max
Tstg(ºC)
Rth (j-l)
(°C/W)Weight
(g)Tj
(ºC)
IR(µA)
VR=VRMmax
Part No.ConditionIF (A)
SFPJ-53 *SFPJ-63
SFPJ-73
SFPB-54
SFPB-64
SFPE-64
SFPB-74
SFPB-56
SFPW-56
SFPB-66
SFPB-76
SFPB-59
SFPB-69
1.0
2.0
3.0
1.0
2.0
2.0
3.0
0.7
1.5
2.0
2.0
0.7
1.5
30
30
30
40
40
40
40
60
60
60
60
90
90
30
40
50
30
60
40
60
10
25
25
40
10
40
0.45
0.45
0.45
0.55
0.55
0.6
0.5
0.62
0.7
0.69
0.62
0.81
0.81
1.0
2.0
3.0
1.0
2.0
2.0
2.0
0.7
1.5
2.0
2.0
0.7
1.5
ConditionTa (°C)
150
150
150
150
150
150
150
150
150
150
150
150
150
1.0
2.0
3.0
1
5
0.2
5
1
1
1
2
1
2
IR (H)(mA)
PackageVR=VRM
max
35
70
100
35
70
70
100
30
70
55
70
30
55
–40 to +150
20
20
20
20
20
20
20
20
20
20
20
20
20
1
1
1
1
1
1
1
1
1
1
1
1
1
0.072
0.072
0.072
0.072
0.072
0.072
0.072
0.072
0.072
0.072
0.072
0.072
0.072
VRM
(V)IF (AV)
(A)
IFSM(A) VF
(V)max
Tstg(ºC)
trr (ns)
trr (ns)
Rth (j-l)
(°C/W)Weight
(g)Tj
(ºC)
IR(µA)
VR=VRMmax
Part No.ConditionIF (A)
SFPL-52
SFPL-62
MPL-102S
MP2-202S
SFPL-64
200
400
0.9
1.0
10.0
20.0
1.0
25
25
65
110
25
0.98
0.98
0.98
0.98
1.3
1.0
2.0
5.0
10.0
1.0
ConditionTa (°C)
150 (Tj)
150 (Tj)
150
150
150
50
50
40
50
50
35
35
30
35
30
100/100
100/100
100/100
100/100
100/100
10
10
100
200
10
IR (H)(mA)
PackageVR=VRM
max
1
1
0.2
0.4
0.05
–40 to +150
Surface-mountUltra Fast Recovery Rectifier Diodes
ConditionIF/IRP (mA)
100/200
100/200
100/200
100/200
100/200
20
20
2.5
2.5
20
1
1
2
2
1
0.072
0.072
1.4
1.4
0.072
ConditionIF/IRP (mA)
Surface-mountSchottky Barrier Diodes
External Dimensions (unit: mm)
4.5 ±0.2
0.05
2.0min1.35±0.4 1.35±0.4
5.1+0.4–0.1
2.6
±0.2
2.05
±0.2
1.1 ±0.2
1.5 ±0.2
1: (Surface-mount SFP) 2: (TO-220S)
6.5±0.4 2.3±0.4 5.4
4.9
4.15.4
a
b
c
±0.4
1.7
±0.5
5.5
±0.4
2.5
±0.4
0.8±0.1 0.8
1.5max
±0.1
0.55±0.1
0.55±0.1
1.15±0.1
1.2m
ax
2.29±0.5 2.29±0.5
0 to 0.25
0.5
±0.2
2.9
0.16
1.37
5.0
0.7
N.C AnodeCathode
* under development
(Common with heatsink)
a) Part No.b) Polarityc) Lot No.
TapingName Taping Dimensions (mm) Packaging Dimensions (mm) and Markings Packaging
Quantity
A suffix "V" is added to Part No. for tape packaging.
V
Emboss taping Reel
(1) The right side of the tape is the cathode viewing in the unfold direction.(2) The product is inserted into the case with the installed electrode on the lower side.(3) A leader tape 150 to 200mm long is provided on the unfolding edge.(4) A space of at least 10 pitches equivalent is provided on either end of the tape.(5) Taping with reversed diode polarity is available on request (taping name VL).
1,800 pcs.
per reel
4.5±0.2
0.05
2.0min1.35 ±0.4 1.35±0.4
5.1+0.4–0.1
2.6
±0.2
2.05
±0.2
1.1±0.2
1.5±0.2
0.1
+ –0.0
5
4.0±0.12.0
3.1
2.6
12.0
±0.3
5.5
±0.0
51.
75±0
.1
4.0±0.1
5.5
Pull out direction
1.5+0.1–0
13 ±0.5
2.0±0.5
21±0.8
R1.0
178±2 14±1.5 2.0±0.5
65
Marking of Part No., Lot No., quantity, etc.
Taping Specifications
General-purpose Diodes - Taping Specifications
131
TapingName Taping Dimensions (mm) Packaging Dimensions (mm) and Markings Packaging
Quantity
A suffix "VR" is added to Part No. for tape packaging.
VR
A suffix "VL" is added to Part No. for tape packaging.
VL3,000 pcs.
per reel
3,000 pcs.
per reel
5,000 pcs.
per reel
TapingName Taping Dimensions (mm) Packaging Dimensions (mm) and Markings Packaging
Quantity
A suffix "V1" is added to Part No. for tape packaging.
V1
Axial taping
6±1.0 6±1.0
5±0.5
58
1.0max
1.2
max
±1
29±1.5
75±1.5
340±2
25±1
Power Surface-mount - Taping Specifications
High-voltage diodes for ignition - Taping Specifications
10.8±0.1
4±0.1 12±0.1
2±0.1
4.9±0.1
24±0
.311.5
±0.1
1.75
±0.1
0.4±0.1
5.4max
2.5 ±0.1(Bottom dimensions)
(Bot
tom
dim
ensio
ns)
21.5
±0.1
14.4
±0.1
(Cov
er ta
pe)
(Seal part)
(Seal part)+0.1 01.5
Pull out direction
Pull out direction
35°
120°
R135
10
10
22
20406080
9±0.5
2±0.5
21±0.8
13 ±0.2
7±0
.5
5 ±0.5
13±0.5
330±2
100±1
13±0
.2
25.5±1
29.5±1
1 3 8 1 3 8
B
MaterialsDisc: both-face white corrugated cardboardCore: foamed styrol
Part No.
QuantityTaping name
(type) Lot No.
Part No.
QuantityLot No.
132
General-purpose Diodes - Taping Specifications
TapingName Taping Dimensions (mm) Packaging Dimensions (mm) and Markings Packaging
Quantity
A suffix "VR" is added to Part No. for tape packaging.
VR
A suffix "VL" is added to Part No. for tape packaging.
VL750 pcs.
per reel
750 pcs.
per reel
The label showing the product name, quantity and production lot is attached to the reel.
Power Zener Surface-mount - Taping Specifications
Pull out direction
Pull out direction
35°
120°
R135
10
10
22
20406080
9±0.5
2±0.5
21±0.8
13 ±0.2
7±0
.5
5 ±0.5
13±0.5
330±2
100±1
13±0
.2
25.5±1
29.5±1
1 3 B 1 3 B
B
1.50±0.1
1.50±0.25
0.40±0.0516.00±0.1
10.80±0.1
2.00±0.14.00±0.1
5.64±0.1
4°4°
1.75
±0.1
11.5
0±0.
1
16.0
0±0.
1
24.0
0+0.
3–0
.1R TYPE L TYPE
8°8°
133
3 LEDs
3-1. Uni-Color LED Lamps .............. 134
3-2. Bi-Color LED Lamps .................. 137
3-3. Surface Mount LEDs .................. 138
3-4. Infrared LEDs ..................................... 140
3-5. Ultraviolet LEDs ............................... 141
3-6. Multi-chip Modules ..................... 142
134
General-purpose LEDs
Uni-Color LED Lamps
Outline Emitting color Part No. Lens color VF(V)
IV(mcd)
typ max typ typ typ
Electro-optical characteristics (Ta=25ºC)
SEL1110RSEL1110WSEL1110SSEL1610WSEL1610CSEL1210RSEL1210SSEL1810DSEL1810ASEL1910DSEL1910ASEL1710YSEL1710KSEL1410GSEL1410ESEL1510CSEL1210RMSEL1210SMSEL1810DMSEL1810AMSEL1910DMSEL1910AMSEL1710KMSEL1410GMSEL1410EMSEL1510CMSELU1210CXMSELU1910CXM-SSELU1D10CXMSELU1E10CXMSELS1E10CXM-MSELU1250CMSEL1250SMSEL1250RMSEL1850AMSEL1850DMSEL1950KMSEL1450EKMSEL1450GM-YGSEL1550CMSELU1D50CMSELU1E50CMSEL1615CSELU1253CMKTSEL1453CEMKTSEL4110SSEL4110RSEL4210SSEL4210RSEL4810ASEL4810DSEL4910ASEL4910DSEL4710KSEL4710Y
Diffused red
Diffused white
Tinted red
Diffused white
Clear
Diffused red
Tinted red
Diffused orange
Tinted orange
Diffused orange
Tinted orange
Diffused yellow
Tinted yellow
Diffused green
Tinted green
Clear
Diffused red
Tinted red
Diffused orange
Tinted orange
Diffused orange
Tinted orange
Tinted yellow
Diffused green
Tinted green
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Tinted red
Diffused red
Tinted orange
Diffused orange
Tinted orange
Tinted green
Diffused green
Clear
Clear
Clear
Clear
Clear
Tinted green
Tinted red
Diffused red
Tinted red
Diffused red
Tinted orange
Diffused orange
Tinted orange
Diffused orange
Tinted yellow
Diffused yellow
Deep red
High-intensity red
Red
Amber
Orange
Yellow
Green
Pure green
Red
Amber
Orange
Yellow
Green
Pure greenUltra high-intensity red
Ultra high-intensity orange
Ultra high-intensity pure green
Ultra high-intensity blue
Ultra high-intensity blue
Ultra high-intensity red
Red
Amber
Orange
Green
Pure greenUltra high-intensity pure green
Ultra high-intensity blue
High-intensity red
Ultra high-intensity red
Green
Deep red
Red
Amber
Orange
Yellow
2.0
1.75
1.9
1.9
1.9
2.0
2.0
2.0
1.9
1.9
1.9
2.0
2.0
2.02.02.03.33.33.72.0
1.9
1.9
1.9
2.0
2.03.33.31.752.02.0
2.0
1.9
1.9
1.9
2.0
2.5
2.2
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.52.52.54.04.04.22.5
2.5
2.5
2.5
2.5
2.54.04.02.22.52.5
2.5
2.5
2.5
2.5
2.5
700
660
630
610
587
570
560
555
630
610
587
570
560
555635591525468468635
630
610
587
560
555525468660635560
700
630
610
587
570
625
642
620
605
590
571
567
559
620
605
590
571
567
559625589530470470625
620
605
590
567
559530470642625567
625
620
605
590
571
1
2
3
4
5
6
7
2.82.84.5250300
267518371425226532845036751837193465308450
280450
2000600
1000900
7548906096
190120
7260001850
1702001402.41.73017201526163614
5
20
20
10
10
10
20
20
20
10
10
10
20
20202020202020
20
20
20
20
202020202020
5
20
10
10
10
GaP
GaA As
GaAsP
GaAsP
GaAsP
GaP
GaP
GaP
GaAsP
GaAsP
GaAsP
GaP
GaP
GaPA GaInPA GaInP
InGaNInGaNInGaN
A GaInP
GaAsP
GaAsP
GaAsP
GaP
GaPInGaNInGaN
GaA AsA GaInP
GaP
GaP
GaAsP
GaAsP
GaAsP
GaP
Chipmaterial
Parameter Unit Conditions
mW
mA
mA /ºC
mA
V
ºC
ºC
PD
IF
∆IF
IFP
VR
Top
Tstg
RatingsGaP GaAsP GaA As A GaInP InGaN GaN
75 120
30
– 0.45 Above 25ºC
f=1kHz, tw=100µs100 70
–30 to +80
53
–30 to +85
–30 to +100
(Ta=25ºC)Absolute Maximum Ratings
ConditionIF (mA)
Dominant wavelengthλp (nm)
Peak wavelengthλp (nm)
Con
tact
mou
nt
Fig
. No
.
5 Round
4 Round
4.65.6Egg-shaped
135
Uni-Color LED Lamps
General-purpose LEDs
Outline Emitting color Part No. Lens color VF (V) IV(mcd)
Peak wavelengthλp (nm)Condition
IF (mA)typ max typ typ typ
Electro-optical characteristics (Ta=25ºC)Dominant wavelength
λp (nm)
SEL4410ESEL4410GSELU4410CKT-SSEL4510CSEL4114SSEL4114RSEL4214SSEL4214RSEL4814ASEL4814DSEL4914ASEL4914DSEL4714KSEL4714YSEL4414ESEL4414GSEL4514CSEL6110SSEL6110RSEL6210SSEL6210RSEL6810ASEL6810DSELU6910C-SSEL6910ASEL6910DSEL6710KSEL6710YSEL6410ESEL6410GSEL6510CSEL6510GSEL6E10CSELU6614C-SSELU6614W-SSELU6214CSEL6214SSEL6814ASELS6B14CSELU6914C-SSEL6914ASEL6914WSELU6714CSEL6714KSEL6714WSEL6414ESELU6414G-SSEL6414E-TGSEL6514CSELS6D14CSELS6E14C-MSEL6215SSEL6915ASEL6715CSEL6415ESEL6515CSEL2110SSEL2110RSEL2110WSEL2610CSELU2610C-SSEL2210SSEL2210RSEL2210WSEL2810ASEL2810DSELU2B10A-S
Tinted green
Diffused green
Clear
Clear
Tinted red
Diffused red
Tinted red
Diffused red
Tinted orange
Diffused orange
Tinted orange
Diffused orange
Tinted yellow
Diffused yellow
Tinted green
Diffused green
Clear
Tinted red
Diffused red
Tinted red
Diffused red
Tinted orange
Diffused orange
Clear
Tinted orange
Diffused orange
Tinted yellow
Diffused yellow
Tinted green
Diffused green
Clear
Diffused green
Clear
Clear
Diffused white
Clear
Tinted red
Tinted orange
Clear
Clear
Tinted orange
Diffused white
Clear
Tinted yellow
Diffused white
Tinted green
Diffused green
Tinted green
Clear
Clear
Clear
Tinted red
Tinted orange
Clear
Tinted green
Clear
Tinted red
Diffused red
Diffused white
Clear
Clear
Tinted red
Diffused red
Diffused white
Tinted orange
Diffused orange
Tinted orange
Green
Ultra high-intensity green
Pure green
Deep red
Red
Amber
Orange
Yellow
Green
Pure green
Deep red
Red
Amber
Ultra high-intensity orange
Orange
Yellow
Green
Pure green
Blue
Ultra high-intensity red
RedAmber
Ultra high-intensity light amber
Ultra high-intensity orange
Orange
Ultra high-intensity yellow
Yellow
GreenUltra high-intensity green
Deep greenPure green
Ultra high-intensity pure green
Ultra high-intensity blue
RedOrangeYellowGreen
Pure green
Deep red
High-intensity red
Ultra high-intensity deep red
Red
Amber
Ultra high-intensity light amber
2.0
2.12.0
2.0
1.9
1.9
1.9
2.0
2.0
2.0
2.0
1.9
1.9
2.0
1.9
2.0
2.0
2.0
4.0
2.0
2.01.91.92.2.0
1.9
2.1
2.0
2.02.12.02.03.33.71.91.92.02.02.0
2.0
1.752.0
1.9
1.9
2.0
2.5
2.52.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
4.8
2.5
2.52.52.52.52.5
2.5
2.5
2.5
2.52.52.52.54.04.22.52.52.52.52.5
2.5
2.22.5
2.5
2.5
2.5
560
560555
700
630
610
587
570
560
555
700
630
610
591
587
570
560
555
430
650
635630610600591
587
572
570
560560558555518468630587570560555
700
660650
630
610
598
567
562559
625
620
605
590
571
567
559
625
620
605
589
590
571
567
559
466
639
625620605596589
590
571
571
567562564559525470620590571567559
625
642639
620
605
595
7
8
9
10
11
12
8734
170453.82.840242015261138276948263.92.64118229.6550
221137119030429.660
15090
180189.01201808.05.060663042301812
300704560908144
41.81.860
300401515229.0300
20
2020
10
20
10
10
10
20
20
10
20
10
20
10
10
20
20
20
20
2020102020
10
20
20
2020202020202020202020
10
2020
20
10
20
GaP
A GaInPGaP
GaP
GaAsP
GaAsP
GaAsP
GaP
GaP
GaP
GaP
GaAsP
GaAsP
A GaInP
GaAsP
GaP
GaP
GaP
GaN
A GaInP
A GaInPGaAsPGaAsP
A GaInPA GaInP
GaAsP
A GaInP
GaP
GaPA GaInP
GaPGaP
InGaNInGaNGaAsPGaAsP
GaPGaPGaP
GaP
GaA AsA GaInP
GaAsP
GaAsP
A GaInP
Chipmaterial C
onta
ctm
ount
Fig
. No
.
4 Round
3 Round
Ultra high-intensitydeep red
136
Uni-Color LED Lamps
General-purpose LEDs
Outline Emitting color Part No. Lens color
typ max typ typ typ
SEL2910ASEL2910DSELU2710CSEL2710KSEL2710YSEL2410ESEL2410GSEL2510CSEL2510GSELU2D10CSELU2E10CSEL2E10CSELU2215R-SSEL2215SSEL2215RSEL2815ASEL2815DSEL2915ASEL2915DSEL2715KSEL2715YSEL2415ESEL2415GSEL2515CSEL1213CSEL1813ASEL1913KSEL1713KSEL1413ESEL1513ESELU6213C-SSELS6B13WSEL6413ESEL6413E-TGSEL6513CSEL2613CS-SSEL2213CSEL2813ASEL2913KSEL2713KSEL2413ESEL2413GSEL2513ESEL5620CSELU5620S-SSELU5220C-SSEL5220SSELU5820C-SSEL5820ASELU5B20CSEL5920ASELU5720CSEL5420ESEL5520CSEL5E20CSELS5223CSEL5223SSEL5823ASELS5B23CSELS5923CSEL5923ASELU5723CSEL5723CSEL5423ESEL5523CSELU5E23CSEL5E23C
Tinted orange
Diffused orange
Clear
Tinted yellow
Diffused yellow
Tinted green
Diffused green
Clear
Diffused green
Clear
Clear
Clear
Diffused red
Tinted red
Diffused red
Tinted orange
Diffused orange
Tinted orange
Diffused orange
Tinted yellow
Diffused yellow
Tinted green
Diffused green
Clear
Tinted red
Tinted orange
Tinted light orange
Tinted yellow
Tinted green
Tinted light green
Clear
Diffused white
Tinted green
Tinted green
Clear
Tinted light red
Tinted red
Tinted orange
Tinted orange
Tinted yellow
Tinted green
Diffused green
Tinted green
Clear
Tinted red
Clear
Tinted red
Clear
Tinted orange
Clear
Tinted orange
Clear
Tinted green
Clear
Clear
Clear
Tinted red
Tinted orange
Clear
Clear
Tinted orange
Clear
Clear
Tinted green
Clear
Clear
Clear
Orange
Ultra high-intensity yellow
Yellow
Green
Pure green
Ultra high-intensity pure green
Ultra high-intensity blue
Blue
Ultra high-intensity red
Red
Amber
Orange
Yellow
Green
Pure green
Red
Amber
Orange
Yellow
Green
Pure green
Ultra high-intensity red
Ultra high-intensity light amber
Green
Deep green
Pure green
High-intensity red
Red
Amber
Orange
Yellow
Green
Pure green
High-intensity red
Ultra high-intensity deep red
Ultra high-intensity red
Red
Ultra high-intensity amber
Amber
Ultra high-intensity light amber
Orange
Ultra high-intensity yellow
Green
Pure green
Blue
Ultra high-intensity red
Red
Amber
Ultra high-intensity light amber
Ultra high-intensity orange
Orange
Ultra high-intensity yellow
Yellow
Green
Pure green
Ultra high-intensity blue
Blue
1.9
2.1
2.0
2.0
2.0
3.33.34.02.0
1.9
1.9
1.9
2.0
2.0
2.01.91.91.92.02.02.02.02.02.02.02.01.751.91.91.92.0
2.0
2.01.752.02.01.92.01.92.01.92.12.02.04.02.01.91.92.02.01.92.12.02.02.03.34.0
2.5
2.5
2.5
2.5
2.5
4.04.04.82.5
2.5
2.5
2.5
2.5
2.5
2.52.52.52.52.52.52.52.52.52.52.52.52.22.52.52.52.5
2.5
2.52.22.52.52.52.52.52.52.52.52.52.54.82.52.52.52.52.52.52.52.52.52.54.04.8
587
572
570
560
555
525468430632
630
610
587
570
560
555630610587570560555632600560558555660630610587570
560
555660650632630611610600587572560555430635630610600591587572570560555468430
590
571
571
567
559
530470466624
620
605
590
571
567
559620605590571567559624596567564559642620605590571
567
559642639624620605605596590571567559466625620605596589590571571567559470466
12
13
14
15
16
17
18
168.0270
40147720438.2
1200400
60380
453880608153
130110110
72527.08.08.015125.0306014
65.0207.08.08.01714125.0100100120
20150
12120
1250206.010
1002535
135145
35155
604013
18020
10
20
10
20
20
20202020
20
10
10
10
20
2020202020202020202020202020202020
20
20202020202020202020202020202020202020202020202020
GaAsP
A GaInP
GaP
GaP
GaP
InGaNInGaNGaN
A GaInP
GaAsP
GaAsP
GaAsP
GaP
GaP
GaPGaAsPGaAsPGaAsP
GaPGaPGaP
A GaInPA GaInP
GaPGaPGaP
GaA AsGaAsPGaAsPGaAsP
GaP
GaP
GaPGaA AsA GaInPA GaInPGaAsP
A GaInPGaAsP
A GaInPGaAsP
A GaInPGaPGaPGaN
A GaInPGaAsPGaAsP
A GaInPA GaInPGaAsP
A GaInPGaPGaPGaP
InGaNGaN
VF (V) IV(mcd)
Peak wavelengthλp (nm)Condition
IF (mA)
Electro-optical characteristics (Ta=25ºC)Dominant wavelength
λp (nm) Chipmaterial C
onta
ctm
ount
Fig
. No
.
3 Round
Inverted-cone typ for surface illumination
5mm Pitch lead rectangular
5mm Pitch lead bow-shaped
137
General-purpose LEDs
Bi-Color LED Lamps
Outline Emitting colorPart No. Lens color Common
typ max typ typ typ
Electro-optical characteristics (Ta=25ºC)
Parameter Unit Conditions
mW
mA
mA /ºC
mA
V
ºC
ºC
PD
IF
∆IF
IFP
VR
Top
Tstg
75 120
30
–0.45
Also applies to simultaneous lighting
Above 25ºC
f=1kHz, tw=100µs100
53
–30 to +85
–30 to +100
(Ta=25ºC)Absolute Maximum Ratings
SML11516C
SML1516W
SML1216C
SML1216W
SML1816W
SML19416W
SMLU12E16C
SMLU12E16W
SMLU12D16W
SMLU18D16C
SMLU18D16W-S
SML72420C
SML78420C
SML79420C
SML72423C
SML72923C
SML78423C
SML79423C
SMLS79723C
SMLU72423C-S
SMLU79423C-S
Clear
Diffused white
Clear
Diffused white
Diffused white
Diffused white
Clear
Diffused white
Diffused white
Clear
Diffused white
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Deep red
Pure green
Deep red
Pure green
Red
Green
Red
Green
Amber
Green
Orange
Green
Ultra high-intensity red
Ultra high-intensity blue
Ultra high-intensity red
Ultra high-intensity blue
Ultra high-intensity red
Ultra high-intensity pure green
Ultra high-intensity amber
Ultra high-intensity pure green
Ultra high-intensity amber
Ultra high-intensity pure green
Red
Green
Amber
Green
Orange
Green
Red
Green
Red
Orange
Amber
Green
Orange
Green
Ultra high-intensity orange
Yellow
Ultra high-intensity red
Ultra high-intensity green
Ultra high-intensity orange
Ultra high-intensity green
2.0
2.0
2.0
2.0
1.9
2.0
1.9
2.0
1.9
2.0
1.9
2.0
2.0
3.3
2.0
3.3
2.0
3.3
2.0
3.3
2.0
3.3
1.9
2.0
1.9
2.0
1.9
2.0
1.9
2.0
1.9
1.9
1.9
2.0
1.9
2.0
2.0
2.0
2.0
2.2
2.0
2.2
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
4.0
2.5
4.0
2.5
4.0
2.5
4.0
2.5
4.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
700
555
700
555
630
560
630
560
610
560
587
560
632
468
632
468
632
525
611
525
611
525
630
560
610
560
587
560
630
560
630
587
610
560
587
560
590
570
635
560
590
560
625
559
625
559
620
567
620
567
605
567
590
567
624
470
624
470
624
530
605
530
605
530
620
567
605
567
590
567
620
567
620
590
605
567
590
657
590
571
625
567
590
567
19
20
21
15
50
6.0
20
65
90
60
60
50
60
45
60
500
400
250
150
250
700
800
2000
300
500
15
20
10
20
10
20
25
35
25
25
25
35
25
35
150
40
120
30
150
30
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
GaP
GaP
GaP
GaP
GaAsP
GaP
GaAsP
GaP
GaAsP
GaP
GaAsP
GaP
A GaInP
InGaN
A GaInP
InGaN
A GaInP
InGaN
A GaInP
InGaN
A GaInP
InGaN
AGaAsP
GaP
GaAsP
GaP
GaAsP
GaP
GaAsP
GaP
GaAsP
GaAsP
GaAsP
GaP
GaAsP
GaP
A GaInP
GaP
A GaInP
A GaInP
A GaInP
A GaInP
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
RatingsGaP GaAsP GaA As A GaInP InGaN
VF (V) IV(mcd)
Peak wavelengthλp (nm)Condition
IF (mA)
Dominant wavelengthλp (nm) Chip
material Con
tact
mou
nt
Fig
. No
.
5 Round
3.36 Bow-shaped
3.36Rectangular
138
Outline Emitting color Part No. Lens color
typ max typ typ typ
SEC4201CSEC4801CSEC4901CSEC4701CSEC4401CSEC4401E-TGSEC4501CSECU4E01CSEC4203CSEC4803CSEC4903CSEC4703CSEC4403CSEC4403E-TGSEC4503CSEC1101CSEC1601CSEC1201CSEC1801CSEC1901CSEC1701C-YGSEC1401CSEC1401E-TGSEC1501CSECU1D01CSECU1E01CSEC1E01CSEC1603CSECS1203CSEC1203CSECS1803CSEC1803CSECS1903CSEC1903CSEC1703CSEC1403CSEC1403E-TGSEC1503C
Clear
Clear
Clear
Clear
Clear
Tinted green
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Tinted green
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Tinted green
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Tinted greenClear
Red
Amber
Orange
Yellow
Green
Deep green
Pure green
Ultra high-intensity blue
Red
Amber
Orange
Yellow
Green
Deep green
Pure green
Deep red
High-intensity red
Red
Amber
Orange
Yellow
Green
Deep green
Pure green
Ultra high-intensity pure green
Ultra high-intensity blue
Blue
High-intensity red
Ultra high-intensity red
Red
Ultra high-intensity amber
Amber
Ultra high-intensity orange
Orange
Yellow
Green
Deep green
Pure green
1.9
1.9
1.9
2.0
2.0
2.0
2.0
3.3
1.9
1.9
1.9
2.0
2.0
2.0
2.0
2.0
1.7
1.9
1.9
1.9
2.0
2.0
2.0
2.0
3.3
3.3
3.9
1.7
1.9
1.9
1.9
1.9
1.9
1.9
2.0
2.0
2.0
2.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
4.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.2
2.5
2.5
2.5
2.5
2.5
2.5
2.5
4.0
4.0
4.8
2.2
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
630
610
587
570
560
558
555
468
630
610
587
570
560
558
555
700
660
630
610
587
570
560
558
555
525
470
430
660
635
630
615
610
590
587
570
560
558
555
620
605
590
571
567
564
559
470
620
605
590
571
567
564
559
625
642
620
605
590
571
567
564
559
525
468
466
642
625
620
607
605
590
590
571
567
564
559
22
23
24
25
10
16
13
25
22
11
8.0
50
15
20
15
35
33
15
10
1.5
25
10
16
13
25
22
11
8.0
150
50
6.0
35
100
15
10
20
70
15
35
33
15
10
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
3
20
20
20
20
20
20
20
GaAsP
GaAsP
GaAsP
GaP
GaP
GaP
GaP
InGaN
GaAsP
GaAsP
GaAsP
GaP
GaP
GaP
GaP
GaP
GaA As
GaAsP
GaAsP
GaAsP
GaP
GaP
GaP
GaP
InGaN
InGaN
GaN
GaA As
A GaInP
GaAsP
A GaInP
GaAsP
A GaInP
GaAsP
GaP
GaP
GaP
GaP
Surface Mount LEDs
Uni-Color Surface Mount LEDs
Parameter Unit Conditions
mA
mA /ºC
mA
V
ºC
ºC
IF
∆IF
IFP
VR
Top
Tstg
GaP GaAsP InGaN GaN30
–0.45 Above 25ºC
f=1kHz, tw=100µs70
54
–30 to +85 –25 to +85
–30 to +100
(Ta=25ºC)Absolute Maximum Ratings
General-purpose LEDs
RatingsGaA As A GaInP
Electro-optical characteristics (Ta=25ºC)
VF (V) IV(mcd)
Peak wavelengthλp (nm)Condition
IF (mA)
Dominant wavelengthλp (nm) Chip
material Fig
. No
.
Side view(flat lens type)
Side view(inner lens type)
31.5(flat lens type)
31.5(inner lens type)
139
Uni-color / Bi-color Surface Mount LEDs with two elements
General-purpose LEDs
Outline Emitting colorPart No. Lens color
typ max typ typ typ
SEC2422C
SEC2442C
SEC2462C
SEC2492C
SEC2552C
SEC2592C
SEC2762C-YG
SEC2484C
SEC2554C
SEC2494C
SEC2764C
SEC2774C
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Red
Green
Green
Green
High-intensity red
Green
Orange
Green
Pure green
Pure green
Orange
Pure green
High-intensity red
Yellow
Amber
Green
Pure green
Pure green
Orange
Green
High-intensity red
Yellow
Yellow
Yellow
1.9
2.0
2.0
2.0
1.7
2.0
1.9
2.0
2.0
2.0
1.9
2.0
1.7
2.0
1.9
2.0
2.0
2.0
1.9
2.0
1.7
2.0
2.0
2.0
2.5
2.5
2.5
2.5
2.2
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.2
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.2
2.5
2.5
2.5
630
560
560
560
660
560
587
560
555
555
587
555
660
570
610
560
555
555
587
560
660
570
570
570
620
567
567
567
642
567
590
567
559
559
590
559
642
571
605
567
559
559
590
567
642
571
571
571
26
27
10
20
20
20
20
20
10
20
5.0
5.0
10
5.0
20
20
20
30
10
10
20
30
50
50
50
50
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
GaAsP
GaP
GaP
GaP
GaA As
GaP
GaAsP
GaP
GaP
GaP
GaAsP
GaP
GaA As
GaP
GaAsP
GaP
GaP
GaP
GaAsP
GaP
GaA As
GaP
GaP
GaP
Surface Mount LEDs
Electro-optical characteristics (Ta=25ºC)
VF (V) IV(mcd)
Peak wavelengthλp (nm)Condition
IF (mA)
Dominant wavelengthλp (nm) Chip
material Fig
. No
.
32.5(flat lens type)
32.5(inner lens type)
140
Infrared LEDs
Parameter Unit Conditions
mA
mA /ºC
mA
V
ºC
ºC
IF
∆IF
IFP
VR
Top
Tstg
Ratings
150
–1.33 Above 25ºC
f=1kHz, tw=10µs1000
5
–30 to +85
–30 to +100
(Ta=25ºC)Absolute Maximum Ratings
General-purpose LEDs
Outline Part No. Lens color (mW/sr)typ max typ typ
(Constant voltage)Vcc=3V,R=2.2Ω
IF=50mA
SID1010CMSID1K10CMSID1010CXMSID1K10CXMSID1050CMSID303CSID313BPSID1003BQSID307BRSID1G307CSID1G313CSID2010CSID2K10C
SEC1G03C
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.5
1.5
1.3
1.3
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.8
1.8
1.5
1.5
1.8
940
940
940
940
940
940
940
940
940
850
850
940
940
850
130
200
80
110
250
80
130
180
200
50
50
7
14
3
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaA As
28
29
30
31
25
Infrared LEDsElectro-optical characteristics (Ta=25ºC)
VF (V) Peak wavelengthλp (nm)
ConditionChipmaterial C
onta
ct
mou
nt
Fig
. No
.
3 1.5(inner lens type)
chip
3 Round
5 RoundTransparentlight purpleTransparent
light navy blueTransparent
dark navy blue
Radiant intensity Ie
141
General-purpose LEDs
Outline Part No. Lens color IV(mcd) Condition
IF(mA)typ max typ typ typ
SECU1V0AC Clear2.8 3.5 3.7 4.0 385 40002.2 20 100pF, 1.5kΩ InGaN 32
Ultraviolet LEDs
Ultraviolet Surface Mount LEDs
Parameter Unit Conditions
mA
mA /ºC
mA
mA
ºC
ºC
IF
∆IF
IFP
IR
Top
Tstg
Ratings
30
–0.45
100
100
–30 to +85
–30 to +100
Absolute Maximum Ratings
Electrostatic withstand voltage
(Ta=25ºC)
Above 25ºC
f=1kHz, tw=10µs
Max. rating of built-in Zener diode
Electro-optical characteristics (Ta=25ºC)
VF (V)Peak wavelength
λp (nm)Condition
Chipmaterial F
ig. N
o.
(V)
Part No. Fig. No.Colors compliant with JIS-Z9112
SEP8WD4001
SEP8WN4001
SEP8WE4001
SEP8WW4001
SEP8WL4001
Cool white
Natural white
White
Warm white
Light bulb
Color temperature [°K]20mA
6400
5000
4200
3450
2875
Total flux [lm]20mA
30
30
30
25
25
Chromaticity x, y20mA
0.32, 0.33
0.34, 0.35
0.37, 0.37
0.41, 0.38
0.44, 0.41
33
Multi-chip LED Module (under development)
Parameter Unit Conditions
mA
mA /ºC
mA
V
ºC
ºC
IF
∆IF
IFP
VR
Topr
Tstg
Ratings
40
–0.25
100
5
–30 to +85
–30 to +100
Absolute Maximum Ratings
142
General-purpose LEDs
(Per element Ta=25ºC)
With an infinite heatsink mounted
f=1kHz, tw=10µs
Fig.1
Fig.2
Fig.3
Fig.4
Fig.5
Fig.6
Fig.7
Fig.8
Fig.9
Fig.10
General-purpose LEDs - External Dimensions
5.6±0.2 20.0min 5.0±0.5 7.6±0.2
19.0min 0.8 (1.0)
Cathode
0.5
(2.5
4)
0.5
1.1m
ax 0.8 Resin heap 1.5max
5.0±0
.2
0.5±0.1Anode
Cathode
1.0min 21.0min 9.4±0.3
5.0±0
.2
Resin heap 0.8maxResin burr 0.3max
0.65
max
0.5±0
.1
(2.5
4)
5.6±0.2 20.0min 5.5±0.5 8.2±0.2
19.0min 0.8 (1.0)
Cathode
0.5±0
.1
1.1m
ax 0.8 Resin heap 1.5max
5.0±0
.2
0.5
(2.5
4)
5.6±0.2 23.0min1.0min 6.9±0.2
Cathode
0.65
max Resin heap 1.5max
5.0±0
.2
(2.5
4)
0.5±0
.1
(1.0)
0.5±0.1
5.6±0.2 23.0min1.0min 7.6±0.2
Cathode
0.65
max Resin heap 1.5max
5.0±0
.2
0.5±0.1
0.5±0
.1
(1.0)
(2.5
4)
5.6±0
.2
Resin burr 0.3max
4.6±0
.2
1.0min 23.5min
Cathode
Anode 7.7±0.5
(2.5
4)
0.65
max
4.7±0
.25.
7±0.2
2-0.
5±0.1
0.5±0
.1
Resin heap 1.5max
143
2.2
4.8
0.4±0.1
(2.5
4)
0.45
±0.1
1.1m
ax Resin heap 1.5max
Cathode
1.0min 25.5min 5.0±0.2
6.5±0.5
0.8 1.5 4.0±0
.2
2.2
4.8
(2.5
4)
0.45
±0.1
0.65
max Resin heap 0.8max
1.0min 24.5min 5.0±0.2
4.0±0
.2
(1.5)
0.4±0.1
Cathode
3.5
0.8±0
.2
4.0±0
.2
0.4±0.1
23.0min1.0min 5.5±0.5
(1.7) 3.5±0.1
(2.5
4)
3.1±0
.1
4.4
0.45
±0.1
0.65
max Resin heap
0.8max
Cathode
3.5
0.8±0
.2
4.0±0
.2
0.4±0.1
23.0min1.0min 4.5±0.5
(1.6) 2.5±0.1
(2.5
4)
3.5
4.4
0.45
±0.1
0.65
max Resin heap
0.8max
Cathode
(Unit: mm)
Fig.11
Fig.12
Fig.13
Fig.14
Fig.15
Fig.16
Fig.17
Fig.18
Fig.19
Fig.20
144
General-purpose LEDs - External Dimensions
3.55.5
0.8±0
.2
4.0±0
.2
0.4±0.1
23.0min1.0min(1.7) 3.5±0.1
(2.5
4) 3.1±0
.1
4.4
0.45
±0.1
0.65
max Resin heap
0.8max
Resin burr0.3max
Cathode mark
Cathode
1.7
3.8
0.4
1.0min 25.8min 3.5±0.1
(1.3)
0.45
±0.1
0.65
max Resin heap 1.5max
3.1±0
.1
Cathode
(2.5
4)
1.55
3.8
0.4±0.1
1.0min 25.4min 4.0±0.1
(1.3)
(2.5
4)
0.45
±0.1
0.65
max Resin heap 1.5max
3.1±
0.1
Cathode
1.7
3.8±0
.1
0.4
(2.5
4)
1.0min 25.8min 2.6±0.1
(1.3)
0.45
±0.1
0.65
max
Resin heap 1.5maxResin burr 0.3max
3.1±0
.1
Cathode
0.4±0.1
23.0min 4.51.0min3.5
2.5±0.1(1.7)
0.45
±0.1
0.8±0
.24.0±0
.2
4.4
0.65
max
Resin heap 0.8maxResin burr 0.3max
3.5±0
.1
(2.5
4)
0.4±0
.1
Cathode
5.6±0.2 20.0min 5.0±0.5 5.8±0.2
19.0min 0.8 (1.0)
0.5
0.5±0
.1
1.1m
ax 0.8 Resin heap 1.5max
4.9±0
.2
Cathode
(2.5
4)
6.2
1.4
3.6
(5.0
)
4.2±0.523.0min1.0min
6.0±0
.2
0.5±0
.1
0.65
max
Resin heap 0.8maxResin burr 0.3maxCathode
3.3±0
.2
0.5±0.1
Cathode mark
6.2
1.4
3.6
(5.0
)5.8±0.523.0min1.0min
3.9
0.5+
0.1
0.65
max
Resin heap 0.8max
Resin burr 0.3maxCathode markCathode
0.5±0
.1
3.6±0
.2
6.0±0
.23.
1
1.0min 17.0min 10.6±0.51.5min
2.0±0.5 7.6±0.21.00.5±0.1
5.8±0
.2
(2.5
4)(2
.54)
Resin heap 1.5maxResin burr 0.3max
5.0±0
.2
1.20.83
– 0.
5±0.1
0.65
max
3.920.0min1.0min
3.3
0.5+
0.1
6.0±0
.2
6.2
1.5min
3.6
0.5±0
.1
0.65
max
Resin heap 1.5maxResin burr 0.3max
(2.5
4)(2
.54)
(Unit: mm)
Fig.21
Fig.22
Fig.23
Fig.24
Fig.25
Fig.26
Fig.27
Fig.28
Fig.29
General-purpose LEDs - External Dimensions
145
3.920.0min1.0min
3.1±0
.20.5±0
.1
6.0±0
.2
6.2
1.5min
3.6
0.5±0
.1
0.65
max
Resin heap 1.5maxResin burr 0.3max
3.6±0
.2
5.8±0.5(2
.54)
(2.5
4)
1.5
3.0
Cathodemark
2.0
1.5
0.9 (0.5)
1.4
Resin
P.C.B.
Anode
Cathode
1.6
0.6
1.3
1.5
3.0
2.0
1.7
1.4(0.5)0.9
1.6
0.6
1.3
Lens Resin Anode
CathodeCathodemark
P.C.B.
1.0
2.51.5
3.0
2.0
1.5
1.4±0.1
1.0
1.0
0.90.6±0.1
P.C.B.
Anode
Cathode
Cathodemark 0.9 (0.5)
Resin
AB
2.51.5
0.8
1.8
3.0
2.0
1.5
1.4±0.1
1.0
1.0
0.90.6±0.1
Lens
P.C.B.
Anode
Cathode
Cathodemark 0.9 (0.5)
Resin
AB
5.6±0.2 23.0min1.0min A
Cathode
0.65
max
Resin heap 1.5maxResin burr 0.3max
5.0±0
.2
0.5±0.1
0.5±0
.1
(1.0)
(2.5
4)
0.5±0
.1
0.5±0.1
Anode
Cathode
1.0min 21.0min 9.4±0.3
5.0±0
.2
Resin heap 0.8maxResin burr 0.3max
0.65
max
0.5±0
.10.
5±0.1
(2.5
4)
Cathode markResin
P.C.B.
Anode
Cathode
MAX 0.1
3.0
1.5
4-R0.35
1.0
2.5
(1.6
)(0.
6)
1.5
2.0
0.9
1.4
(0.5)
±0.1
SEC4001
Cathodemark
Resin
P.C.B. Anode
Cathode
MAX 0.1
±0.1
0.45
0.6
1.03
2.53
Lens
0.9
1.4
1.7
ø1.02.0
1.6
(0.5)1.5
3.0
1.3
SEC4003
7.6±0.2
6.9±0.2
SID1010CMSID1K10CMSID1010CXMSID1K10CXM
Electrode burr
(Unit: mm)
Dimension A (mm)
Electrode burr
Fig.30
Fig.31
Fig.32
Fig.33
146
General-purpose LEDs - External Dimensions
1.7
ø3.
8
0.4
1.0min 25.8min 3.5±0.1
(1.3)
0.45
±0.1
0.65
max Resin burr 0.3max
Resin heap 1.5max
3.1±0
.1Cathode
(2.5
4)
0.4±0
.1
5.6
24.0min 8.5±0.5
Anode
(2.5
4)
0.6±0
.1
1.1m
ax0.
85+
0.1
Resin heap 1.5max
0.6±0.1
0.6±0
.1
Resin burr 0.3max
4.8±0
.2
Cathode
2.0min
(0.8)A3.5
0.8
1.43.2(2.7)
2.8
2.6
(2.4
)
Cathode Mark
Cathode
Cathode
Anode
Anode
Surface Side view
Side view
Reverse Side
Inner circuit
0.2
ZD
LED
8.8
±0.3
(0.7
)(0.8
)
3.5
(0.5)
±0.050.2
±0.050.3 ±0.25P1.0*3=3.0±0.253.0
4.8
12.0
Mark
Heatsink
Resin: color White
4.4
5.8
2.0
10.0
13.2
12 11 10
5 6 7 83 42
16 15 14 13 9
1 Resin
Dimension A (mm)
SID303C 3.0±0.5
3.6±0.5
4.2±0.5
SID313BPSID1003BQSID307BRSID1G307C
(Unit: mm)
147
Power transistor
Power transistor
Power transistor
Power transistor
Power transistor
Power transistor
Power transistor
Power transistor
Power transistor
Power transistor
Power transistor
Power transistor
MOS FET
MOS FET
MOS FET
MOS FET
MOS FET
MOS FET
MOS FET
MOS FET
MOS FET
Power transistor
Power transistor
Power transistor
Ultrafast Recovery Diode (Surface Mount)
Ultrafast Recovery Diode (Surface Mount)
Power Zener Diode (Surface Mount)
Power transistor Array (Surface Mount)
Power transistor Array (Surface Mount)
Power transistor Array (Surface Mount)
High-side Power Switch IC
MOS FET Array ( Surface mount )
MOS FET Array ( Surface mount )
MOS FET Array ( Surface mount )
3 x 1.5 Surface Mount LED
3 x 1.5 Surface Mount LED
3 x 1.5 Surface Mount Inner Lens TypeLED
3 x 1.5 Surface Mount LED
3 x 1.5 Surface Mount LED
3 x 1.5 Surface Mount Inner Lens TypeLED
3 x 1.5 Surface Mount Inner Lens TypeLED
3 x 1.5 Surface Mount LED
3 x 1.5 Surface Mount Inner Lens TypeLED
3 x 1.5 Surface Mount LED
3 x 1.5 Surface Mount Inner Lens TypeLED
3 x 1.5 Surface Mount LED
3 x 1.5 Surface Mount Inner Lens TypeLED
3 x 1.5 Surface Mount LED
3 x 1.5 Surface Mount Inner Lens TypeLED
3 x 1.5 Surface Mount LED
3 x 1.5 Surface Mount Inner Lens TypeLED
3 x 1.5 Surface Mount LED
3 x 1.5 Infrared Surface Mount Inner Lens Type LED
2SA1488/A
2SA1567
2SA1568
2SA1908
2SB1622
2SC3852
2SC4024
2SC4065
2SC4153
2SD2141
2SD2382
2SD2633
2SK3710
2SK3711
2SK3724
2SK3800
2SK3801
2SK3803
2SK3851
FKV460S
FKV660S
FP812
MN611S
MN638S
MP2-202S
MPL-102S
PZ628
SDA03
SDA04
SDC09
SDH04
SDK06
SDK08
SDK09
SEC1101C
SEC1201C
SEC1203C
SEC1401C
SEC1401E-TG
SEC1403C
SEC1403E-TG
SEC1501C
SEC1503C
SEC1601C
SEC1603C
SEC1701C-YG
SEC1703C
SEC1801C
SEC1803C
SEC1901C
SEC1903C
SEC1E01C
SEC1G03C
80
81
82
83
84
85
86
87
88
89
90
91
108
109
110
111
112
113
114
115
116
92
93
94
130
130
129
96
97
98
24
117
118
119
138
138
138
138
138
138
138
138
138
138
138
138
138
138
138
138
138
138
140
3 x 2.5 Surface Mount 2-Chip LED
3 x 2.5 Surface Mount 2-Chip LED
3 x 2.5 Surface Mount 2-Chip LED
3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED
3 x 2.5 Surface Mount 2-Chip LED
3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED
3 x 2.5 Surface Mount 2-Chip LED
3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED
3 x 2.5 Surface Mount 2-Chip LED
3 x 2.5 Surface Mount 2-Chip LED
3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED
Side-view Surface Mount LED
Side-view Surface Mount Inner Lens TypeLED
Side-view Surface Mount LED
Side-view Surface Mount LED
Side-view Surface Mount Inner Lens TypeLED
Side-view Surface Mount Inner Lens TypeLED
Side-view Surface Mount LED
Side-view Surface Mount Inner Lens TypeLED
Side-view Surface Mount LED
Side-view Surface Mount Inner Lens TypeLED
Side-view Surface Mount LED
Side-view Surface Mount Inner Lens TypeLED
Side-view Surface Mount LED
Side-view Surface Mount Inner Lens TypeLED
3 x 1.5 Surface Mount Inner Lens TypeLED
3 x 1.5 Surface Mount Inner Lens TypeLED
3 x 1.5 Surface Mount Inner Lens TypeLED
3 x 1.5 Surface Mount LED
3 x 1.5 Surface Mount LED
2.8 x 3.5 Ultraviolet Surface Mount LED
Side-view Surface Mount LED
5ø Round Standard LED (With Stopper)
5ø Round Standard LED (With Stopper)
5ø Round Standard LED (With Stopper)
5ø Round Standard LED (With Stopper)
5ø Round Standard LED
5ø Round Standard LED (With Stopper)
5ø Round Standard LED
5ø Inverted-cone LED for Surface illumination
5ø Round Narrow-directivity LED, Direct mount supported5ø Round Narrow-directivity LED, Direct mount supported
5ø Round Standard LED (With Stopper)
5ø Round Standard LED
5ø Round Standard LED (With Stopper)
5ø Round Standard LED
5ø Inverted-cone LED for Surface illumination
5ø Round Narrow-directivity LED, Direct mount supported5ø Round Narrow-directivity LED, Direct mount supported
4.6 x 5.6ø Egg-shaped LED
5ø Round Standard LED (With Stopper)
5ø Round Standard LED
SEC2422C
SEC2442C
SEC2462C
SEC2484C
SEC2492C
SEC2494C
SEC2552C
SEC2554C
SEC2592C
SEC2762C-YG
SEC2764C
SEC2774C
SEC4201C
SEC4203C
SEC4401C
SEC4401E-TG
SEC4403C
SEC4403E-TG
SEC4501C
SEC4503C
SEC4701C
SEC4703C
SEC4801C
SEC4803C
SEC4901C
SEC4903C
SECS1203C
SECS1803C
SECS1903C
SECU1D01C
SECU1E01C
SECU1V0AC
SECU4E01C
SEL1110R
SEL1110S
SEL1110W
SEL1210R
SEL1210RM
SEL1210S
SEL1210SM
SEL1213C
SEL1250RM
SEL1250SM
SEL1410E
SEL1410EM
SEL1410G
SEL1410GM
SEL1413E
SEL1450EKM
SEL1450GM-YG
SEL1453CEMKT
SEL1510C
SEL1510CM
139
139
139
139
139
139
139
139
139
139
139
139
138
138
138
138
138
138
138
138
138
138
138
138
138
138
138
138
138
138
138
141
138
134
134
134
134
134
134
134
136
134
134
134
134
134
134
136
134
134
134
134
134
5ø Inverted-cone LED for Surface illumination
5ø Round Narrow-directivity LED, Direct mount supported
5ø Round Standard LED (With Stopper)
5ø Round Standard LED (With Stopper)
5ø Round Narrow-directivity LED
5ø Round Standard LED (With Stopper)
5ø Round Standard LED
5ø Round Standard LED (With Stopper)
5ø Inverted-cone LED for Surface illumination
5ø Round Standard LED (With Stopper)
5ø Round Standard LED
5ø Round Standard LED (With Stopper)
5ø Round Standard LED
5ø Inverted-cone LED for Surface illumination
5ø Round Narrow-directivity LED, Direct mount supported5ø Round Narrow-directivity LED, Direct mount supported
5ø Round Standard LED (With Stopper)
5ø Round Standard LED
5ø Round Standard LED (With Stopper)
5ø Round Standard LED
5ø Inverted-cone LED for Surface illumination
5ø Round Narrow-directivity LED, Direct mount supported
3ø Round Type LED
3ø Round Type LED
3ø Round Type LED
3ø Round Type LED
3ø Round Type LED
3ø Round Type LED
3ø Inverted-cone LED for Surface illumination
3ø Round Type Narrow-directivity LED
3ø Round Type Narrow-directivity LED
3ø Round Type LED
3ø Round Type LED
3ø Inverted-cone LED for Surface illumination
3ø Inverted-cone LED for Surface illumination
3ø Round Type Narrow-directivity LED
3ø Round Type Narrow-directivity LED
3ø Round Type LED
3ø Round Type LED
3ø Inverted-cone LED for Surface illumination
3ø Round Type Narrow-directivity LED
3ø Round Type LED
3ø Inverted-cone LED for Surface illumination
3ø Round Type LED
3ø Round Type LED
3ø Inverted-cone LED for Surface illumination
3ø Round Type Narrow-directivity LED
3ø Round Type Narrow-directivity LED
3ø Round Type LED
3ø Round Type LED
3ø Inverted-cone LED for Surface illumination
3ø Round Type Narrow-directivity LED
3ø Round Type Narrow-directivity LED
SEL1513E
SEL1550CM
SEL1610C
SEL1610W
SEL1615C
SEL1710K
SEL1710KM
SEL1710Y
SEL1713K
SEL1810A
SEL1810AM
SEL1810D
SEL1810DM
SEL1813A
SEL1850AM
SEL1850DM
SEL1910A
SEL1910AM
SEL1910D
SEL1910DM
SEL1913K
SEL1950KM
SEL2110R
SEL2110S
SEL2110W
SEL2210R
SEL2210S
SEL2210W
SEL2213C
SEL2215R
SEL2215S
SEL2410E
SEL2410G
SEL2413E
SEL2413G
SEL2415E
SEL2415G
SEL2510C
SEL2510G
SEL2513E
SEL2515C
SEL2610C
SEL2613CS-S
SEL2710K
SEL2710Y
SEL2713K
SEL2715K
SEL2715Y
SEL2810A
SEL2810D
SEL2813A
SEL2815A
SEL2815D
136
134
134
134
134
134
134
134
136
134
134
134
134
136
134
134
134
134
134
134
136
134
135
135
135
135
135
135
136
136
136
136
136
136
136
136
136
136
136
136
136
135
136
136
136
136
136
136
135
135
136
136
136
Part Number Index in Alphanumeric Order
Part No. Description Page Part No. Description Page Part No. Description Page
3ø Round Type LED
3ø Round Type LED
3ø Inverted-cone LED for Surface illumination
3ø Round Type Narrow-directivity LED
3ø Round Type Narrow-directivity LED
3ø Round Type LED
4ø Round Type LED
4ø Round Type LED
4ø Round Type Wide-directivity LED, Direct mount supported4ø Round Type Wide-directivity LED, Direct mount supported
4ø Round Type LED
4ø Round Type LED
4ø Round Type Wide-directivity LED, Direct mount supported4ø Round Type Wide-directivity LED, Direct mount supported
4ø Round Type LED
4ø Round Type LED
4ø Round Type Wide-directivity LED, Direct mount supported4ø Round Type Wide-directivity LED, Direct mount supported
4ø Round Type LED
4ø Round Type Wide-directivity LED, Direct mount supported
4ø Round Type LED
4ø Round Type LED
4ø Round Type Wide-directivity LED, Direct mount supported4ø Round Type Wide-directivity LED, Direct mount supported
4ø Round Type LED
4ø Round Type LED
4ø Round Type Wide-directivity LED, Direct mount supported4ø Round Type Wide-directivity LED, Direct mount supported
4ø Round Type LED
4ø Round Type LED
4ø Round Type Wide-directivity LED, Direct mount supported4ø Round Type Wide-directivity LED, Direct mount supported5mm Pitch Lead Rectangular LED, Direct mount supported5mm Pitch Lead Bow-shaped LED, Direct mount supported5mm Pitch Lead Rectangular LED, Direct mount supported5mm Pitch Lead Bow-shaped LED, Direct mount supported5mm Pitch Lead Rectangular LED, Direct mount supported5mm Pitch Lead Bow-shaped LED, Direct mount supported5mm Pitch Lead Rectangular LED, Direct mount supported5mm Pitch Lead Bow-shaped LED, Direct mount supported5mm Pitch Lead Rectangular LED, Direct mount supported5mm Pitch Lead Bow-shaped LED, Direct mount supported5mm Pitch Lead Rectangular LED, Direct mount supported5mm Pitch Lead Bow-shaped LED, Direct mount supported5mm Pitch Lead Rectangular LED, Direct mount supported5mm Pitch Lead Bow-shaped LED, Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Narrow-directivity LED, Direct mount supported
3ø Round Type LED, Direct mount supported
SEL2910A
SEL2910D
SEL2913K
SEL2915A
SEL2915D
SEL2E10C
SEL4110R
SEL4110S
SEL4114R
SEL4114S
SEL4210R
SEL4210S
SEL4214R
SEL4214S
SEL4410E
SEL4410G
SEL4414E
SEL4414G
SEL4510C
SEL4514C
SEL4710K
SEL4710Y
SEL4714K
SEL4714Y
SEL4810A
SEL4810D
SEL4814A
SEL4814D
SEL4910A
SEL4910D
SEL4914A
SEL4914D
SEL5220S
SEL5223S
SEL5420E
SEL5423E
SEL5520C
SEL5523C
SEL5620C
SEL5723C
SEL5820A
SEL5823A
SEL5920A
SEL5923A
SEL5E20C
SEL5E23C
SEL6110R
SEL6110S
SEL6210R
SEL6210S
SEL6214S
SEL6215S
SEL6410E
3ø Round Type LED, Direct mount supported
3ø Inverted-cone LED for Surface illumination, Direct mount supported3ø Inverted-cone LED for Surface illumination, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Narrow-directivity LED, Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Inverted-cone LED for Surface illumination, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Narrow-directivity LED, Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Narrow-directivity LED, Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Round Type Wide-directivity LED, Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Narrow-directivity LED, Direct mount supported
3ø Round Type LED, Direct mount supported
5ø Round Wide-directivity LED
5mm Pitch Lead Bow-shaped LED, Direct mount supported5mm Pitch Lead Bow-shaped LED, Direct mount supported5mm Pitch Lead Bow-shaped LED, Direct mount supported3ø Inverted-cone LED for Surface illumination, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported
5ø Round Wide-directivity LED
5ø Round Narrow-directivity LED, Direct mount supported
4.6 x 5.6ø Egg-shaped LED
5ø Round Wide-directivity LED
5ø Round Wide-directivity LED
5ø Round Narrow-directivity LED, Direct mount supported
5ø Round Wide-directivity LED
5ø Round Narrow-directivity LED, Direct mount supported
3ø Round Type Narrow-directivity LED
3ø Round Type LED
3ø Round Type LED
3ø Round Type LED
3ø Round Type LED
3ø Round Type LED
4ø Round Type LED
5mm Pitch Lead Rectangular LED, Direct mount supported5mm Pitch Lead Rectangular LED, Direct mount supported5mm Pitch Lead Rectangular LED, Direct mount supported5mm Pitch Lead Bow-shaped LED, Direct mount supported5mm Pitch Lead Rectangular LED, Direct mount supported
SEL6410G
SEL6413E
SEL6413E-TG
SEL6414E
SEL6414E-TG
SEL6415E
SEL6510C
SEL6510G
SEL6513C
SEL6514C
SEL6515C
SEL6710K
SEL6710Y
SEL6714K
SEL6714W
SEL6715C
SEL6810A
SEL6810D
SEL6814A
SEL6910A
SEL6910D
SEL6914A
SEL6914W
SEL6915A
SEL6E10C
SELS1E10CXM-M
SELS5223C
SELS5923C
SELS5B23C
SELS6B13W
SELS6B14C
SELS6D14C
SELS6E14C-M
SELU1210CXM
SELU1250CM
SELU1253CMKT
SELU1910CXM-S
SELU1D10CXM
SELU1D50CM
SELU1E10CXM
SELU1E50CM
SELU2215R-S
SELU2610C-S
SELU2710C
SELU2B10A-S
SELU2D10C
SELU2E10C
SELU4410CKT-S
SELU5220C-S
SELU5620S-S
SELU5720C
SELU5723C
SELU5820C-S
135
136
136
135
135
135
135
135
136
135
135
135
135
135
135
135
135
135
135
135
135
135
135
135
135
134
136
136
136
136
135
135
135
134
134
134
134
134
134
134
134
136
135
136
135
136
136
135
136
136
136
136
136
136
136
136
136
136
136
134
134
135
135
134
134
135
135
135
135
135
135
135
135
134
134
135
135
134
134
135
135
134
134
135
135
136
136
136
136
136
136
136
136
136
136
136
136
136
136
135
135
135
135
135
135
135
5mm Pitch Lead Rectangular LED, Direct mount supported5mm Pitch Lead Bow-shaped LED, Direct mount supported3ø Inverted-cone LED for Surface illumination, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported3ø Round Type Wide-directivity LED, Direct mount supported
3ø Round Type LED, Direct mount supported
3ø Round Type Wide-directivity LED, Direct mount supported
Multi-chip LED Module
Multi-chip LED Module
Multi-chip LED Module
Multi-chip LED Module
Multi-chip LED Module
Schottky Barrier Diode(Surface Mount)
Schottky Barrier Diode(Surface Mount)
Schottky Barrier Diode(Surface Mount)
Schottky Barrier Diode(Surface Mount)
Schottky Barrier Diode(Surface Mount)
Schottky Barrier Diode(Surface Mount)
Schottky Barrier Diode(Surface Mount)
Schottky Barrier Diode(Surface Mount)
Schottky Barrier Diode(Surface Mount)
Schottky Barrier Diode(Surface Mount)
Schottky Barrier Diode(Surface Mount)
Schottky Barrier Diode(Surface Mount)
Ultrafast Recovery Diode(Surface Mount)
Ultrafast Recovery Diode(Surface Mount)
Ultrafast Recovery Diode(Surface Mount)
Rectifier Diode(Surface Mount)
Rectifier Diode(Surface Mount)
Rectifier Diode(Surface Mount)
Rectifier Diode(Surface Mount)
Schottky Barrier Diode(Surface Mount)
Power Zener Diode
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
SELU5B20C
SELU5E23C
SELU6213C-S
SELU6214C
SELU6414G-S
SELU6614C-S
SELU6614W-S
SELU6714C
SELU6910C-S
SELU6914C-S
SEP8WD4001
SEP8WE4001
SEP8WL4001
SEP8WN4001
SEP8WW4001
SFPB-54
SFPB-56
SFPB-59
SFPB-64
SFPB-66
SFPB-69
SFPB-74
SFPB-76
SFPE-64
SFPJ-53
SFPJ-63
SFPJ-73
SFPL-52
SFPL-62
SFPL-64
SFPM-52
SFPM-54
SFPM-62
SFPM-64
SFPW-56
SFPZ-68
SG-9CNR
SG-9CNS
SG-9CZR
SG-9CZS
SG-9LCNR
SG-9LCNS
SG-9LLCNR
SG-9LLCNS
SG-9LLCZR
SG-9LLCZS
SG-10LLR
SG-10LLS
SG-10LLXR
SG-10LLXS
SG-10LLZ23R
SG-10LLZ23S
SG-10LR
136
136
136
135
135
135
135
135
135
135
142
142
142
142
142
130
130
130
130
130
130
130
130
130
130
130
130
130
130
130
130
130
130
130
130
129
127
127
127
127
127
127
127
127
127
127
127
127
127
127
127
127
127
148
Part Number Index in Alphanumeric Order
Part No. Description Page Part No. Description Page Part No. Description Page
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
Rectifier Diode for Alternator
High-Voltage Rectifier Diode for Ignition Coil
High-Voltage Rectifier Diode for Ignition Coil
High-Voltage Rectifier Diode for Ignition Coil
Linear Regulator IC
Linear Regulator IC
Linear Regulator IC
Linear Regulator IC
Switching Regulator IC
System Regulator IC
High-side Power Switch IC
High-side Power Switch IC
High-side Power Switch IC
High-side Power Switch IC
High-side Power Switch IC
Full-bridge Motor Driver IC
5ø Round Infrade LED
5ø Round Infrade LED
5ø Round Infrade LED
5ø Round Infrade LED, Direct mount supported
5ø Round Infrade LED
5ø Round Infrade LED
5ø Round Infrade LED
5ø Round Infrade LED
3ø Round Infrade LED
3ø Round Infrade LED
5ø Round Infrade LED
5ø Round Infrade LED
5ø Round Infrade LED
Power Zener Diode (Surface Mount)
Power Zener Diode (Surface Mount)
Power Zener Diode (Surface Mount)
Power Zener Diode (Surface Mount)
Power Zener Diode (Surface Mount)
High Voltage Driver IC for HID Lamps
High Voltage Driver IC for HID Lamps
High-side Power Switch IC
High-side Power Switch IC
Stepper-motor Driver IC
MOS FET Array
MOS FET Array
Power transistor Array
High Voltage Driver IC for HID Lamps
MOS FET Array
5ø Round Standard Bicolor LED
5ø Round Standard Bicolor LED
5ø Round Standard Bicolor LED
SG-10LS
SG-10LXR
SG-10LXS
SG-10LZ23R
SG-10LZ23S
SG-14LXZS
SG-14LXZS
SHV-01JN
SHV-05J
SHV-06JN
SI-3001S
SI-3003S
SI-3101S
SI-3102S
SI-3201S
SI-3322S
SI-5151S
SI-5152S
SI-5153S
SI-5154S
SI-5155S
SI-5300
SID1003BQ
SID1010CM
SID1010CXM
SID1050CM
SID1G307C
SID1G313C
SID1K10CM
SID1K10CXM
SID2010C
SID2K10C
SID303C
SID307BR
SID313BP
SJPZ-E18
SJPZ-E27
SJPZ-E33
SJPZ-E36
SJPZ-K28
SLA2402M
SLA2403M
SLA2501M
SLA2502M
SLA4708M
SLA5027
SLA5098
SLA8004
SMA2409M
SMA5113
SML11516C
SML1216C
SML1216W
127
127
127
127
127
127
127
128
128
128
8
10
12
14
22
16
26
28
30
32
34
60
140
140
140
140
140
140
140
140
140
140
140
140
140
129
129
129
129
129
64
68
36
38
56
120
121
99
72
122
137
137
137
5ø Round Standard Bicolor LED
5ø Round Standard Bicolor LED
5ø Round Standard Bicolor LED
3.3 x 6 Rectangular Type Bicolor LED
3.3 x 6 Bow-Shaped Type Bicolor LED
3.3 x 6 Bow-Shaped Type Bicolor LED
3.3 x 6 Rectangular Type Bicolor LED
3.3 x 6 Bow-Shaped Type Bicolor LED
3.3 x 6 Rectangular Type Bicolor LED
3.3 x 6 Bow-Shaped Type Bicolor LED
3.3 x 6 Bow-Shaped Type Bicolor LED
5ø Round Standard Bicolor LED
5ø Round Standard Bicolor LED
5ø Round Standard Bicolor LED
5ø Round Standard Bicolor LED
5ø Round Standard Bicolor LED
3.3 x 6 Bow-Shaped Type Bicolor LED
3.3 x 6 Bow-Shaped Type Bicolor LED
Power transistor Array (Surface Mount)
System Regulator IC
System Regulator IC
Low-side Power Switch IC
High-side Power Switch IC
High-side Power Switch IC
High-side Power Switch IC
Low-side Power Switch IC
Low-side Power Switch IC
High-side Power Switch IC
High-side Power Switch IC
Stepper-motor Driver IC
Full-bridge Motor Driver IC
Power transistor
Power transistor Array
Power transistor Array
Power transistor Array
Power transistor Array
Power transistor Array
Power transistor Array
Power transistor Array
MOS FET Array
MOS FET Array
Power Zener Diode (Surface Mount)
Power Zener Diode (Surface Mount)
Power Zener Diode (Surface Mount)
Power Zener Diode (Surface Mount)
3-Pin Reverce Conducting Thyrisyor for HID Lamp Ignition3-Pin Reverce Conducting Thyrisyor for HID Lamp Ignition
SML1516W
SML1816W
SML19416W
SML72420C
SML72423C
SML72923C
SML78420C
SML78423C
SML79420C
SML79423C
SMLS79723C
SMLU12D16W
SMLU12E16C
SMLU12E16W
SMLU18D16C
SMLU18D16W-S
SMLU72423C-S
SMLU79423C-S
SPF0001
SPF3004
SPF3006
SPF5002A
SPF5003
SPF5004
SPF5007
SPF5009
SPF5012
SPF5017
SPF5018
SPF7211
SPF7301
SSD103
STA315A
STA335A
STA415A
STA460C
STA461C
STA463C
STA464C
STA508A
STA509A
SZ-10N27
SZ-10N40
SZ-10NN27
SZ-10NN40
TFC561D
TFC562D
137
137
137
137
137
137
137
137
137
137
137
137
137
137
137
137
137
137
100
18
20
50
40
42
44
52
54
46
48
58
62
95
101
102
103
104
105
106
107
123
124
129
129
129
129
125
126
149
Part Number Index in Alphanumeric Order
Part No. Description Page Part No. Description Page
H1-C01ED0-0607020TAThis document uses 100% recycled paper.
•http://www.sanken-ele.co.jp
ISO 9001/14001 CertifiedSanken products are manufactured and delivered to the customer based on a strict quality and environmental control system established and certified by the ISO 9001/14001 international certification standards.
IProducts: Power IC, Control IC, Hall IC, Bipolar Transistor, MOS FET, IGBT, Thyristor, Rectifier Diode, LED (Light Emitting Diode), CCFL (Cold Cathode Fluorescent Lamp), Switching Power Supply, UPS (Uninterruptible Power Supply), DC Power Supply, Inverter, Universal Airway Beacon System and Other Power Supplies and Equipments
•The information contained in this document is correct as of July 2006.This is notification that you, as purchaser of the products/technology, are not allowed to perform any of the following: 1. Resell or retransfer these products/technology to any party intending to disturb international peace and security. 2. Use these products/technology yourself for activities disturbing international peace and security. 3. Allow any other party to use these products/technology for activities disturbing international peace and security.Also, as purchaser of these products/technology, you agree to follow the procedures for the export or transfer of these products/technology, under the Foreign Exchange and Foreign Trade Law, when you export or transfer the products/technology abroad.
1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo Tel: 81-3-3986-6164 Fax: 81-3-3986-8637
SANKEN ELECTRIC CO.,LTD.
Overseas Sales OfficesAsiaSingaporeSanken Electric Singapore Pte. Ltd.150 Beach Road, #14-03 The Gateway West Singapore 189720, SingaporeTel: 65-6291-4755 Fax: 65-6297-1744 ChinaSanken Electric Hong Kong Co., Ltd.Suite 1026 Ocean Centre, Canton Road, Tsimshatsui, Kowloon, Hong KongTel: 852-2735-5262 Fax: 852-2735-5494 Sanken Electric (Shanghai) Co., Ltd.Room 3202, Maxdo Centre, Xingyi Road 8 Changning district, Shanghai, ChinaTel: 86-21-5208-1177 Fax: 86-21-5208-1757 KoreaSanken Electric Korea Co., Ltd.Mirae Asset Life Bldg., 6F 168, Kongduk-dong, Mapo-ku, Seoul, 121-705, KoreaTel: 82-2-714-3700 Fax: 82-2-3272-2145 TaiwanTaiwan Sanken Electric Co., Ltd.Room 1801, 18th Floor, 88 Jung Shiau East Road, Sec. 2, Taipei 100, Taiwan R.O.C.Tel: 886-2-2356-8161 Fax: 886-2-2356-8261
North AmericaAllegro MicroSystems, Inc.115 Northeast Cutoff, Worcester, MA 01606 General InformationTel: 1-508-853-5000 Fax: 1-508-853-3353
EuropeSanken Power Systems (UK) Ltd.Abercynon, Mountain Ash, Mid Glamorgan CF45 4XA, U.K.Tel: 44-1443-742-333 Fax: 44-1443-743-354