datasheet ikw50n65eh5 - infineon technologies
TRANSCRIPT
Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.2www.infineon.com 2017-07-27
IKW50N65EH5
Highspeedseriesfifthgeneration
Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithfull-ratedRAPID1fastandsoftantiparalleldiodeFeaturesandBenefits:
HighspeedH5technologyoffering•Best-in-Classefficiencyinhardswitchingandresonanttopologies•PlugandplayreplacementofpreviousgenerationIGBTs•650Vbreakdownvoltage•LowgatechargeQG•IGBTcopackedwithfull-ratedRAPID1fastandsoftantiparalleldiode•Maximumjunctiontemperature175°C•QualifiedaccordingtoJEDECfortargetapplications•Pb-freeleadplating;RoHScompliant•CompleteproductspectrumandPSpiceModels:http://www.infineon.com/igbt/
Applications:
•Uninterruptiblepowersupplies•Solarconverters•Weldingconverters•Midtohighrangeswitchingfrequencyconverters
Packagepindefinition:
•Pin1-gate•Pin2&backside-collector•Pin3-emitter
G
C
E
12
3
KeyPerformanceandPackageParametersType VCE IC VCEsat,Tvj=25°C Tvjmax Marking PackageIKW50N65EH5 650V 50A 1.65V 175°C K50EEH5 PG-TO247-3
Datasheet 2 V2.22017-07-27
IKW50N65EH5
Highspeedseriesfifthgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Datasheet 3 V2.22017-07-27
IKW50N65EH5
Highspeedseriesfifthgeneration
MaximumRatingsForoptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value UnitCollector-emittervoltage,Tvj≥25°C VCE 650 V
DCcollectorcurrent,limitedbyTvjmaxTC=25°CvaluelimitedbybondwireTC=100°C
IC 80.050.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax1) ICpuls 200.0 A
Turn off safe operating areaVCE≤650V,Tvj≤175°C,tp=1µs1) - 200.0 A
Diodeforwardcurrent,limitedbyTvjmaxTC=25°CvaluelimitedbybondwireTC=100°C
IF 80.050.0
A
Diodepulsedcurrent,tplimitedbyTvjmax1) IFpuls 200.0 A
Gate-emitter voltageTransientGate-emittervoltage(tp≤10µs,D<0.010) VGE
±20±30 V
PowerdissipationTC=25°CPowerdissipationTC=100°C Ptot
275.0138.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,wave soldering 1.6mm (0.063in.) from case for 10s 260 °C
Mounting torque, M3 screw, PG-TO247-pin123Maximum of mounting processes: 3 M 0.6 Nm
ThermalResistance
Valuemin. typ. max.
Parameter Symbol Conditions Unit
RthCharacteristics
IGBT thermal resistance,junction - case Rth(j-C) - - 0.55 K/W
Diode thermal resistance,junction - case Rth(j-C) - - 0.63 K/W
Thermal resistancejunction - ambient Rth(j-a) - - 40 K/W
1) Defined by design. Not subject to production test.
Datasheet 4 V2.22017-07-27
IKW50N65EH5
Highspeedseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=50.0ATvj=25°CTvj=125°CTvj=175°C
---
1.651.851.95
2.10--
V
Diode forward voltage VF
VGE=0V,IF=50.0ATvj=25°CTvj=125°CTvj=175°C
---
1.351.331.30
1.70--
V
Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 3.2 4.0 4.8 V
Zero gate voltage collector current ICESVCE=650V,VGE=0VTvj=25°CTvj=175°C
--
12000
50-
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=50.0A - 62.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 3000 -
Output capacitance Coes - 90 -
Reverse transfer capacitance Cres - 12 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QGVCC=520V,IC=50.0A,VGE=15V - 120.0 - nC
Internal emitter inductancemeasured 5mm (0.197 in.) fromcase
LE - 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°CTurn-on delay time td(on) - 25 - ns
Rise time tr - 29 - ns
Turn-off delay time td(off) - 172 - ns
Fall time tf - 35 - ns
Turn-on energy Eon - 1.50 - mJ
Turn-off energy Eoff - 0.50 - mJ
Total switching energy Ets - 2.00 - mJ
Tvj=25°C,VCC=400V,IC=50.0A,VGE=0.0/15.0V,RG(on)=12.0Ω,RG(off)=12.0Ω,Lσ=30nH,Cσ=25pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.
Datasheet 5 V2.22017-07-27
IKW50N65EH5
Highspeedseriesfifthgeneration
Turn-on delay time td(on) - 24 - ns
Rise time tr - 12 - ns
Turn-off delay time td(off) - 173 - ns
Fall time tf - 15 - ns
Turn-on energy Eon - 0.57 - mJ
Turn-off energy Eoff - 0.16 - mJ
Total switching energy Ets - 0.73 - mJ
Tvj=25°C,VCC=400V,IC=25.0A,VGE=0.0/15.0V,RG(on)=12.0Ω,RG(off)=12.0Ω,Lσ=30nH,Cσ=25pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr - 81 - ns
Diode reverse recovery charge Qrr - 1.10 - µC
Diode peak reverse recovery current Irrm - 17.0 - A
Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -1000 - A/µs
Tvj=25°C,VR=400V,IF=50.0A,diF/dt=1000A/µs,Lσ=30nH,Cσ=25pF
Diode reverse recovery time trr - 56 - ns
Diode reverse recovery charge Qrr - 0.70 - µC
Diode peak reverse recovery current Irrm - 19.7 - A
Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -1500 - A/µs
Tvj=25°C,VR=400V,IF=25.0A,diF/dt=1000A/µs,Lσ=30nH,Cσ=25pF
SwitchingCharacteristic,InductiveLoad
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=150°CTurn-on delay time td(on) - 24 - ns
Rise time tr - 30 - ns
Turn-off delay time td(off) - 190 - ns
Fall time tf - 30 - ns
Turn-on energy Eon - 2.00 - mJ
Turn-off energy Eoff - 0.60 - mJ
Total switching energy Ets - 2.60 - mJ
Tvj=150°C,VCC=400V,IC=50.0A,VGE=0.0/15.0V,RG(on)=12.0Ω,RG(off)=12.0Ω,Lσ=30nH,Cσ=25pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.
Turn-on delay time td(on) - 23 - ns
Rise time tr - 14 - ns
Turn-off delay time td(off) - 203 - ns
Fall time tf - 20 - ns
Turn-on energy Eon - 0.95 - mJ
Turn-off energy Eoff - 0.25 - mJ
Total switching energy Ets - 1.20 - mJ
Tvj=150°C,VCC=400V,IC=25.0A,VGE=0.0/15.0V,RG(on)=12.0Ω,RG(off)=12.0Ω,Lσ=30nH,Cσ=25pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.
Datasheet 6 V2.22017-07-27
IKW50N65EH5
Highspeedseriesfifthgeneration
DiodeCharacteristic,atTvj=150°C
Diode reverse recovery time trr - 108 - ns
Diode reverse recovery charge Qrr - 2.60 - µC
Diode peak reverse recovery current Irrm - 36.0 - A
Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -2000 - A/µs
Tvj=150°C,VR=400V,IF=50.0A,diF/dt=1000A/µs,Lσ=30nH,Cσ=25pF
Diode reverse recovery time trr - 98 - ns
Diode reverse recovery charge Qrr - 1.80 - µC
Diode peak reverse recovery current Irrm - 28.8 - A
Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -1500 - A/µs
Tvj=150°C,VR=400V,IF=25.0A,diF/dt=1000A/µs,Lσ=30nH,Cσ=25pF
Datasheet 7 V2.22017-07-27
IKW50N65EH5
Highspeedseriesfifthgeneration
Figure 1. Forwardbiassafeoperatingarea(D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs,ICmaxdefinedbydesign-notsubjecttoproduction test)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLEC
TORCURREN
T[A]
1 10 100 10000.1
1
10
100
not for linear use
Figure 2. Powerdissipationasafunctionofcasetemperature(Tvj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot ,PO
WER
DISSIPA
TION[W
]
25 50 75 100 125 150 1750
50
100
150
200
250
300
Figure 3. Collectorcurrentasafunctionofcasetemperature(VGE≥15V,Tvj≤175°C)
TC,CASETEMPERATURE[°C]
IC,C
OLLEC
TORCURREN
T[A]
25 50 75 100 125 150 1750
10
20
30
40
50
60
70
80
90
Figure 4. Typicaloutputcharacteristic(Tvj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLEC
TORCURREN
T[A]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.00
15
30
45
60
75
90
105
120
135
150VGE = 20V
18V
15V
12V
10V
8V
7V
6V
5V
Datasheet 8 V2.22017-07-27
IKW50N65EH5
Highspeedseriesfifthgeneration
Figure 5. Typicaloutputcharacteristic(Tvj=150°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLEC
TORCURREN
T[A]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.00
15
30
45
60
75
90
105
120
135
150VGE = 20V
18V
15V
12V
10V
8V
7V
6V
5V
Figure 6. Typicaltransfercharacteristic(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,C
OLLEC
TORCURREN
T[A]
2 3 4 5 6 7 8 90
15
30
45
60
75
90
105
120
135
150Tvj = 25°CTvj = 150°C
Figure 7. Typicalcollector-emittersaturationvoltageasafunctionofjunctiontemperature(VGE=15V)
Tvj,JUNCTIONTEMPERATURE[°C]
VCEsat,C
OLLEC
TOR-EMITTE
RSAT
URAT
ION[V
]
25 50 75 100 125 150 1750.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0IC = 25AIC = 50AIC = 100A
Figure 8. Typicalswitchingtimesasafunctionofcollectorcurrent(inductiveload,Tvj=150°C,VCE=400V,VGE=0/15V,RG(on)=12Ω,RG(off)=12Ω,dynamictest circuit in Figure E)
IC,COLLECTORCURRENT[A]
t,SW
ITCHINGTIMES
[ns]
0 25 50 75 100 125 1501
10
100
1000td(off)
tftd(on)
tr
Datasheet 9 V2.22017-07-27
IKW50N65EH5
Highspeedseriesfifthgeneration
Figure 9. Typicalswitchingtimesasafunctionofgateresistance(inductiveload,Tvj=150°C,VCE=400V,VGE=0/15V,IC=50A,dynamictestcircuitinFigure E)
RG,GATERESISTANCE[Ω]
t,SW
ITCHINGTIMES
[ns]
5 15 25 35 45 55 65 75 8510
100
1000td(off)
tftd(on)
tr
Figure 10. Typicalswitchingtimesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=0/15V,IC=50A,RG(on)=12Ω,RG(off)=12Ω,dynamictest circuit in Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
t,SW
ITCHINGTIMES
[ns]
25 50 75 100 125 150 1751
10
100
1000td(off)
tftd(on)
tr
Figure 11. Gate-emitterthresholdvoltageasafunctionofjunctiontemperature(IC=0.5mA)
Tvj,JUNCTIONTEMPERATURE[°C]
VGE(th) ,GAT
E-EM
ITTE
RTHRES
HOLD
VOLTAG
E[V]
25 50 75 100 125 1501.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0typ.min.max.
Figure 12. Typicalswitchingenergylossesasafunctionofcollectorcurrent(inductiveload,Tvj=150°C,VCE=400V,VGE=0/15V,RG(on)=12Ω,RG(off)=12Ω,dynamic test circuit in Figure E)
IC,COLLECTORCURRENT[A]
E,S
WITCHINGENER
GYLO
SSES
[mJ]
0 25 50 75 100 125 1500
1
2
3
4
5
6
7
8
9
10
11
12Eoff
Eon
Ets
Datasheet 10 V2.22017-07-27
IKW50N65EH5
Highspeedseriesfifthgeneration
Figure 13. Typicalswitchingenergylossesasafunctionofgateresistance(inductiveload,Tvj=150°C,VCE=400V,VGE=0/15V,IC=50A,dynamictestcircuitinFigure E)
RG,GATERESISTANCE[Ω]
E,S
WITCHINGENER
GYLO
SSES
[mJ]
5 15 25 35 45 55 65 75 850
1
2
3
4
5
6
7Eoff
Eon
Ets
Figure 14. Typicalswitchingenergylossesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=0/15V,IC=50A,RG(on)=12Ω,RG(off)=12Ω,dynamictest circuit in Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
E,S
WITCHINGENER
GYLO
SSES
[mJ]
25 50 75 100 125 150 1750.0
0.5
1.0
1.5
2.0
2.5
3.0Eoff
Eon
Ets
Figure 15. Typicalswitchingenergylossesasafunctionofcollectoremittervoltage(inductiveload,Tvj=150°C,VGE=0/15V,IC=50A,RG(on)=12Ω,RG(off)=12Ω,dynamictest circuit in Figure E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,S
WITCHINGENER
GYLO
SSES
[mJ]
200 250 300 350 400 450 5000.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5Eoff
Eon
Ets
Figure 16. Typicalgatecharge(IC=50A)
QG,GATECHARGE[nC]
VGE ,GAT
E-EM
ITTE
RVOLTAG
E[V]
0 20 40 60 80 100 1200
2
4
6
8
10
12
14
16VCE = 130VVCE = 520V
Datasheet 11 V2.22017-07-27
IKW50N65EH5
Highspeedseriesfifthgeneration
Figure 17. Typicalcapacitanceasafunctionofcollector-emittervoltage(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,C
APAC
ITAN
CE[pF]
0 5 10 15 20 25 301
10
100
1000
1E+4
Cies
Coes
Cres
Figure 18. IGBTtransientthermalimpedance(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j -c
) ,TR
ANSIEN
TTH
ERMAL
IMPE
DAN
CE[K/W
]
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.10.001
0.01
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:ri[K/W]:τi[s]:
19.5E-32.5E-5
20.1250392.3E-4
30.1328572.1E-3
40.2566540.012197
50.0215510.104256
62.1E-31.840158
Figure 19. Diodetransientthermalimpedanceasafunctionofpulsewidth(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j -c
) ,TR
ANSIEN
TTH
ERMAL
IMPE
DAN
CE[K/W
]
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.10.001
0.01
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:ri[K/W]:τi[s]:
10.0134312.6E-5
20.1463252.1E-4
30.1590152.0E-3
40.2785060.01147
50.0255380.091987
62.1E-31.834403
Figure 20. Typicalreverserecoverytimeasafunctionofdiodecurrentslope(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
trr,R
EVER
SEREC
OVE
RYTIME[ns]
500 700 900 1100 1300 15000
20
40
60
80
100
120
140
160
180Tvj = 25°C, IF = 50ATvj = 150°C, IF = 50A
Datasheet 12 V2.22017-07-27
IKW50N65EH5
Highspeedseriesfifthgeneration
Figure 21. Typicalreverserecoverychargeasafunctionofdiodecurrentslope(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Qrr ,REV
ERSE
REC
OVE
RYCHAR
GE[µC]
500 700 900 1100 1300 15000.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5Tvj = 25°C, IF = 50ATvj = 150°C, IF = 50A
Figure 22. Typicalreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Irr,R
EVER
SEREC
OVE
RYCURREN
T[A]
500 700 900 1100 1300 15000
10
20
30
40
50
60
70Tvj = 25°C, IF = 50ATvj = 150°C, IF = 50A
Figure 23. Typicaldiodepeakrateoffallofreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
dIrr /dt,D
IODEPE
AKRAT
EOFFA
LLOFIrr[A
/µs]
500 700 900 1100 1300 1500-13000
-12000
-11000
-10000
-9000
-8000
-7000
-6000
-5000
-4000
-3000
-2000
-1000
0
Tvj = 25°C, IF = 50ATvj = 150°C, IF = 50A
Figure 24. Typicaldiodeforwardcurrentasafunctionofforwardvoltage
VF,FORWARDVOLTAGE[V]
IF ,FORWAR
DCURREN
T[A]
0.0 0.5 1.0 1.5 2.0 2.5 3.00
15
30
45
60
75
90
105
120
135
150Tvj = 25°CTvj = 150°C
Datasheet 13 V2.22017-07-27
IKW50N65EH5
Highspeedseriesfifthgeneration
Figure 25. Typicaldiodeforwardvoltageasafunctionofjunctiontemperature
Tvj,JUNCTIONTEMPERATURE[°C]
VF ,FO
RWAR
DVOLTAG
E[V]
25 50 75 100 125 150 1750.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
IF = 25AIF = 50AIF = 100A
Datasheet 14 V2.22017-07-27
IKW50N65EH5
Highspeedseriesfifthgeneration
Package Drawing PG-TO247-3
Datasheet 15 V2.22017-07-27
IKW50N65EH5
Highspeedseriesfifthgeneration
t
a b
td(off)
tf t
rtd(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
t
t
90% VGE
VGE
(t)
t
t
tt1 t
4
2% IC
10% VGE
2% VCE
t2
t3
E
t
t
V I toff
= x x d
1
2
CE CE
t
t
V I ton
= x x d
3
4
CE C
CC
dI /dtF
dI
I,V
Figure A.
Figure B.
Figure C. Definition of diode switchingcharacteristics
Figure E. Dynamic test circuit
Figure D.
I (t)C
Parasitic inductance L ,
parasitic capacitor C ,
relief capacitor C ,
(only for ZVT switching)
s
s
r
t t t
Q Q Qrr a b
rr a b
= +
= +
Qa Qb
V (t)CE
VGE
(t)
I (t)C
V (t)CE
Testing Conditions
Datasheet 16 V2.22017-07-27
IKW50N65EH5
Highspeedseriesfifthgeneration
RevisionHistory
IKW50N65EH5
Revision:2017-07-27,Rev.2.2Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2015-05-20 Final data sheet
2.2 2017-07-27 Correction Fig.1
Trademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
PublishedbyInfineonTechnologiesAG81726München,Germany©InfineonTechnologiesAG2017.AllRightsReserved.
ImportantNoticeTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics(“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthisdocumentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseoftheproductofInfineonTechnologiesincustomer’sapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication.
Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearestInfineonTechnologiesoffice(www.infineon.com).
PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotiveElectronicsCouncil.
WarningsDuetotechnicalrequirementsproductsmaycontaindangeroussubstances.ForinformationonthetypesinquestionpleasecontactyournearestInfineonTechnologiesoffice.
ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorizedrepresentativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswhereafailureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.