datasheet ice3br0665j v2!3!19nov2012
TRANSCRIPT
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CoolSET-F3R
ICE3BR0665J
Off-Line SMPS Current Mode
Control ler wi th integrated 650V
CoolMOS and Startup cel l
( f requency j i t ter Mode) in DIP-8
N e v e r s t o p t h i n k i n g .
Power Management & Supply
Version 2.3, 19 Nov 2012
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Edition 2012-11-19
Published byInfineon Technologies AG,81726 Munich, Germany,
2012 Infineon Technologies AG.All Rights Reserved.
Legal disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions orcharacteristics. With respect to any examples or hints given herein, any typical values stated herein and/or anyinformation regarding the application of the device, Infineon Technologies hereby disclaims any and all warrantiesand liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rightsof any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact your nearestInfineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types inquestion, please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may be used in life-support devices or systems only with the express writtenapproval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failureof that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustainand/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons maybe endangered.
For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany orthe Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com
CoolMOS, CoolSETare trademarks of Infineon Technologies AG.
CoolSET-F3RICE3BR0665JRevision History: 2012-11-19 Datasheet
Previous Version: 2.2
Page Subjects (major changes since last revision)
27 revised outline dimension for PG-DIP-8 package
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Type Package Marking VDS FOSC RDSon1)
1) typ @ Tj=25C
230VAC 15%2)
2) Calculated maximum input power rating at Ta=50C, Ti=125C and without copper area as heat sink. Refer to input power curve for other Ta.
85-265 VAC2)
ICE3BR0665J PG-DIP-8 ICE3BR0665J 650V 65kHz 0.65 74W 49W
CoolSET-F3RICE3BR0665J
Version 2.3 3 19 Nov 2012
Off-Line SMPS Current Mode Controller withintegrated 650V CoolMOS and Startup cell
(frequency jitter Mode) in DIP-8
PG-DIP-8
Description
The CoolSET-F3R jitter series (ICE3BRxx65J) is thelatest version of CoolSET-F3. It targets for the Off-Linebattery adapters and low cost SMPS for lower powerrange such as application for DVD R/W, DVD Combi, Blueray DVD player, set top box, etc. Besides inherited theoutstanding performance of the CoolSET-F3 in theBiCMOS technology, active burst mode, auto-restartprotection, propagation delay compensation, etc.,CoolSET-F3R series has some new features such asbuilt-in soft start time, built-in blanking window, built-infrequency jitter, soft gate driving, etc. In case a longerblanking time is needed for high load application, a simpleaddition of capacitor to BA pin can serve the purpose.
Furthermore, an external auto-restart enable feature canprovide extra protection when there is a need ofimmediate stop of power switching.
Product Highlights Active Burst Mode to reach the lowest Standby Power
Requirements < 50mW Auto Restart protection for overload, overtemperature, overvoltage External auto-restart enable function Built-in soft start and blanking window Extendable blanking Window for high load jumps Built-in frequency jitter and soft driving for low EMI Green Mould Compound Pb-free lead plating; RoHS compliant
Features 650V avalanche rugged CoolMOSwith built-in
Startup Cell Active Burst Mode for lowest Standby Power Fast load jump response in Active Burst Mode 65kHz internally fixed switching frequency Auto Restart Protection Mode for Overload, Open
Loop, VCC Undervoltage, Overtemperature &Overvoltage
Built-in Soft Start Built-in blanking window with extendable blanking
time for short duration high current External auto-restart enable pin Max Duty Cycle 75%
Overall tolerance of Current Limiting < 5% Internal PWM Leading Edge Blanking BiCMOS technology provide wide VCC range Built-in Frequency jitter and soft driving for low EMI
CVCC
CBulkConverter
DC Output
+
Snubber
Power Management
PWM Controller
Current Mode
85 ... 270 VAC
Typical Application
RSense
BA
FB
GNDActive Burst Mode
Auto Restart Mode
Control
Unit
-
CS
VCC
Startup Cell
Precise Low Tolerance Peak
Current Limitation
Drain
CoolSET-F3R
(Jitter Mode)
CoolMOS
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CoolSET-F3R
ICE3BR0665J
Table of Contents Page
Version 2.3 4 19 Nov 2012
1 Pin Configuration and Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
1.1 Pin Configuration with PG-DIP-8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
1.2 Pin Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
2 Representative Blockdiagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
3 Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
3.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
3.2 Power Management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
3.3 Improved Current Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
3.3.1 PWM-OP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
3.3.2 PWM-Comparator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
3.4 Startup Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .113.5 PWM Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
3.5.1 Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
3.5.2 PWM-Latch FF1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
3.5.3 Gate Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
3.6 Current Limiting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
3.6.1 Leading Edge Blanking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
3.6.2 Propagation Delay Compensation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
3.7 Control Unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3.7.1 Basic and Extendable Blanking Mode . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3.7.2 Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3.7.2.1 Entering Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3.7.2.2 Working in Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3.7.2.3 Leaving Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3.7.3 Protection Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
3.7.3.1 Auto Restart mode with extended blanking time . . . . . . . . . . . . . . . . .17
3.7.3.2 Auto Restart without extended blanking time . . . . . . . . . . . . . . . . . . .18
4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
4.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
4.2 Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
4.3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
4.3.1 Supply Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
4.3.2 Internal Voltage Reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
4.3.3 PWM Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
4.3.4 Soft Start time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
4.3.5 Control Unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
4.3.6 Current Limiting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
4.3.7 CoolMOSSection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
5 Typical CoolMOSPerformance Characteristic . . . . . . . . . . . . . . . . . . .24
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CoolSET-F3R
ICE3BR0665J
Version 2.3 5 19 Nov 2012
6 Input Power Curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
7 Outline Dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27
8 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
9 Schematic for recommended PCB layout . . . . . . . . . . . . . . . . . . . . . . . .29
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Version 2.3 6 19 Nov 2012
CoolSET-F3R
ICE3BR0665J
Pin Configuration and Functionality
1 Pin Configuration and Functionality
1.1 Pin Configuration with PG-DIP-8
Pin Symbol Function
1 BA extended Blanking & Auto-restart
2 FB FeedBack
3 CS Current Sense/
650V1)
1) at Tj=110C
CoolMOSSource
4 Drain 650V1) CoolMOS Drain
5 Drain650V
1)
CoolMOS
Drain6 n.c. Not connected
7 VCC Controller Supply Voltage
8 GND Controller GrouND
Package PG-DIP-8
1
6
7
8
4
3
2
5
GNDBA
FB
CS
VCC
n.c.
Drain Drain
Figure 1 Pin Configuration PG-DIP-8 (top view)
Note: Pin 4 and 5 are shorted
1.2 Pin Functionality
BA (extended Blanking & Auto-restart)
The BA pin combines the functions of extendableblanking time for over load protection and the externalauto-restart enable. The extendable blanking timefunction is to extend the built-in 20 ms blanking time byadding an external capacitor at BA pin to ground. Theexternal auto-restart enable function is an externalaccess to stop the gate switching and force the IC enterauto-restart mode. It is triggered by pulling down theBA pin to less than 0.33V.
FB (Feedback)The information about the regulation is provided by theFB Pin to the internal Protection Unit and to the internalPWM-Comparator to control the duty cycle. The FB-Signal is the only control signal in case of light load atthe Active Burst Mode.
CS (Current Sense)
The Current Sense pin senses the voltage developedon the series resistor inserted in the source of theintegrated CoolMOSIf voltage in CS pin reaches theinternal threshold of the Current Limit Comparator, theDriver output is immediately switched off. Furthermorethe current information is provided for the PWM-Comparator to realize the Current Mode.
Drain (Drain of integrated CoolMOS)
Drain pin is the connection to the Drain of theintegrated CoolMOS.
VCC (Power Supply)
VCC pin is the positive supply of the IC. The operatingrange is between 10.5V and 25V.
GND (Ground)
GND pin is the ground of the controller.
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Version 2.3 8 19 Nov 2012
CoolSET-F3R
ICE3BR0665J
Functional Description
3 Functional DescriptionAll values which are used in the functional description
are typical values. For calculating the worst cases themin/max values which can be found in section 4Electrical Characteristics have to be considered.
3.1 Introduction
CoolSET-F3R jitter series (ICE3BRxx65J) is the latestversion of the CoolSET-F3 for the lower powerapplication. The particular enhanced features are thebuilt-in features for soft start, blanking window andfrequency jitter. It provides the flexibility to increase theblanking window by simply addition of a capacitor in BApin. In order to further increase the flexibility of theprotection feature, an external auto-restart enablefeatures are added. Moreover, the proven outstandingfeatures in CoolSET-F3 are still remained such as theactive burst mode, propagation delay compensation,modulated gate driving, auto-restart protection for Vccovervoltage, over temperature, over load, open loop,etc.
The intelligent Active Burst Mode can effectively obtainthe lowest Standby Power at light load and no loadconditions. After entering the burst mode, there is still afull control of the power conversion to the outputthrough the optocoupler, that is used for the normalPWM control. The response on load jumps is optimizedand the voltage ripple on Voutis minimized. The Voutison well controlled in this mode.
The usually external connected RC-filter in thefeedback line after the optocoupler is integrated in theIC to reduce the external part count.
Furthermore a high voltage Startup Cell is integratedinto the IC which is switched off once the UndervoltageLockout on-threshold of 18V is exceeded. This StartupCell is part of the integrated CoolMOS. The externalstartup resistor is no longer necessary as this StartupCell is connected to the Drain. Power losses aretherefore reduced. This increases the efficiency under
light load conditions drastically.Adopting the BiCMOS technology, it can increase thedesign flexibility as the Vcc voltage range is increasedto 25V.
The CoolSET-F3R has a built-in 20ms soft startfunction. It can further save external componentcounts.
There are 2 modes of blanking time for high loadjumps; the basic mode and the extendable mode. Theblanking time for the basic mode is set at 20ms whilethe extendable mode will increase the blanking time byadding an external capacitor at the BA pin in addition to
the basic mode blanking time. During this blanking timewindow the overload detection is disabled. With thisconcept no further external components are necessaryto adjust the blanking window.
In order to increase the robustness and safety of the
system, the IC provides Auto Restart protection. TheAuto Restart Mode reduces the average powerconversion to a minimum level under unsafe operatingconditions. This is necessary for a prolonged faultcondition which could otherwise lead to a destruction ofthe SMPS over time. Once the malfunction is removed,normal operation is automatically retained after thenext Start Up Phase. To make the protection moreflexible, an external auto-restart enable pin is provided.When the pin is triggered, the switching pulse at gatewill stop and the IC enters the auto-restart mode afterthe pre-defined spike blanking time.
The internal precise peak current control reduces the
costs for the transformer and the secondary diode. Theinfluence of the change in the input voltage on themaximum power limitation can be avoided togetherwith the integrated Propagation Delay Compensation.Therefore the maximum power is nearly independenton the input voltage, which is required for wide rangeSMPS. Thus there is no need for the over-sizing of theSMPS, e.g. the transformer and the output diode.
Furthermore, this F3R series implements thefrequency jitter mode to the switching clock such thatthe EMI noise will be effectively reduced.
3.2 Power Management
Internal Bias
Voltage
Reference
Power Management
5.0V
Undervoltage Lockout18V
10.5V
Power-Down Reset
Active Burst
Mode
Auto Restart
Mode
Startup Cell
VCCDrain
Depl. CoolMOS
Soft Start block
Figure 3 Power Management
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CoolSET-F3R
ICE3BR0665J
Functional Description
Version 2.3 9 19 Nov 2012
The Undervoltage Lockout monitors the externalsupply voltage VVCC. When the SMPS is plugged to themain line the internal Startup Cell is biased and starts
to charge the external capacitor CVCC which isconnected to the VCC pin. This VCC charge current iscontrolled to 0.9mA by the Startup Cell. When the VVCCexceeds the on-threshold VCCon=18V the bias circuitare switched on. Then the Startup Cell is switched offby the Undervoltage Lockout and therefore no powerlosses present due to the connection of the Startup Cellto the Drain voltage. To avoid uncontrolled ringing atswitch-on, a hysteresis start up voltage is implemented.The switch-off of the controller can only take placewhen VVCC falls below 10.5V after normal operationwas entered. The maximum current consumptionbefore the controller is activated is about 150A.
When VVCCfalls below the off-threshold VCCoff=10.5V,the bias circuit is switched off and the soft start counteris reset. Thus it is ensured that at every startup cyclethe soft start starts at zero.
The internal bias circuit is switched off if Auto RestartMode is entered. The current consumption is thenreduced to 150A.
Once the malfunction condition is removed, this blockwill then turn back on. The recovery from Auto RestartMode does not require re-cycling the AC line.
When Active Burst Mode is entered, the internal Bias isswitched off most of the time but the Voltage Reference
is kept alive in order to reduce the current consumptionbelow 450A.
3.3 Improved Current Mode
x3.3
PWM OP
Improved
Current Mode
0.67V
C8
PWM-Latch
CS
FBR
S
Q
Q
Driver
Soft-Start Comparator
Figure 4 Current Mode
Current Mode means the duty cycle is controlled by theslope of the primary current. This is done by comparingthe FB signal with the amplified current sense signal.
t
FB
Amplified Current Signal
ton
t
0.67V
Driver
Figure 5 Pulse Width Modulation
In case the amplified current sense signal exceeds theFB signal the on-time Tonof the driver is finished byresetting the PWM-Latch (see Figure 5).
The primary current is sensed by the external seriesresistor RSense inserted in the source of the integratedCoolMOS. By means of Current Mode regulation, thesecondary output voltage is insensitive to the linevariations. The current waveform slope will change withthe line variation, which controls the duty cycle.
The external RSenseallows an individual adjustment ofthe maximum source current of the integratedCoolMOS.
To improve the Current Mode during light loadconditions the amplified current ramp of the PWM-OPis superimposed on a voltage ramp, which is built bythe switch T2, the voltage source V1 and a resistor R1
(see Figure 6). Every time the oscillator shuts down formaximum duty cycle limitation the switch T2 is closedby VOSC. When the oscillator triggers the Gate Driver,T2 is opened so that the voltage ramp can start.
In case of light load the amplified current ramp is toosmall to ensure a stable regulation. In that case theVoltage Ramp is a well defined signal for thecomparison with the FB-signal. The duty cycle is thencontrolled by the slope of the Voltage Ramp.
By means of the time delay circuit which is triggered bythe inverted VOSCsignal, the Gate Driver is switched-offuntil it reaches approximately 156ns delay time (seeFigure 7). It allows the duty cycle to be reduced
continuously till 0% by decreasing VFB below thatthreshold.
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PWM OP
0.67V
10k
Oscillator
C8
T2 R1
C1
FB
PWM-Latch
V1
Gate Driver
Voltage Ramp
VOSC
Soft-Start Comparator
time delay
circuit (156ns)
X3.3
PWM Comparator
CoolSET-F3R
ICE3BR0665J
Functional Description
Version 2.3 10 19 Nov 2012
Figure 6 Improved Current Mode
t
t
VOSC
0.67V
FB
t
max.Duty Cycle
Gate Driver
Voltage Ramp
156ns time delay
Figure 7 Light Load Conditions
3.3.1 PWM-OP
The input of the PWM-OP is applied over the internal
leading edge blanking to the external sense resistorRSenseconnected to pin CS. RSenseconverts the sourcecurrent into a sense voltage. The sense voltage isamplified with a gain of 3.3 by PWM OP. The output ofthe PWM-OP is connected to the voltage source V1.The voltage ramp with the superimposed amplifiedcurrent signal is fed into the positive inputs of the PWM-Comparator C8 and the Soft-Start-Comparator (seeFigure 6).
3.3.2 PWM-Comparator
The PWM-Comparator compares the sensed currentsignal of the integrated CoolMOSwith the feedbacksignal VFB(see Figure 8). VFBis created by an externaloptocoupler or external transistor in combination withthe internal pull-up resistor RFBand provides the loadinformation of the feedback circuitry. When theamplified current signal of the integrated CoolMOS
exceeds the signal VFBthe PWM-Comparator switchesoff the Gate Driver.
X3.3
PWM OP
Improved
Current Mode
PWM Comparator
CS
Soft-Start Comparator
5V
C8
0.67V
FB
Optocoupler
RFB
PWM-Latch
Figure 8 PWM Controlling
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3.4 Startup Phase
Soft-Start
C om para to r
Sof t S tar t
&
G 7
C 7Gate Dr iver
0 .67V
x3.3
P W M O P
C S
Soft Start counter
Sof t S tar t
SoftStartfinish Sof tS
Figure 9 Soft Start
In the Startup Phase, the IC provides a Soft Startperiod to control the primary current by means of a dutycycle limitation. The Soft Start function is a built-in
function and it is controlled by an internal counter..
VSoftS
VSoftS2
VSoftS1
Figure 10 Soft Start Phase
When the VVCCexceeds the on-threshold voltage, theIC starts the Soft Start mode (see Figure 10).
The function is realized by an internal Soft Start
resistor, an current sink and a counter. And theamplitude of the current sink is controlled by thecounter (see Figure 11).
5V
RSoftS
Soft Start
Counter
I2I4I
SoftS
8I32I
Figure 11 Soft Start Circuit
After the IC is switched on, the VSFOFTS voltage iscontrolled such that the voltage is increased step-
wisely (32 steps) with the increase of the counts. TheSoft Start counter would send a signal to the currentsink control in every 600us such that the current sinkdecrease gradually and the duty ratio of the gate driveincreases gradually. The Soft Start will be finished in20ms (tSoft-Start) after the IC is switched on. At the end ofthe Soft Start period, the current sink is switched off.
t
VSOFTS32
VSoftS
Gate
Driver
t
tSoft-Start
Figure 12 Gate drive signal under Soft-Start Phase
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ICE3BR0665J
Functional Description
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Within the soft start period, the duty cycle is increasingfrom zero to maximum gradually (see Figure 12).
In addition to Start-Up, Soft-Start is also activated at
each restart attempt during Auto Restart.
t
t
VSoftS
t
VSOFTS32
4.0V
tSoft-Start
VOUT
VFB
VOUT
tStart-Up
Figure 13 Start Up Phase
The Start-Up time tStart-Upbefore the converter outputvoltage VOUTis settled, must be shorter than the Soft-Start Phase tSoft-Start(see Figure 13).
By means of Soft-Start there is an effectiveminimization of current and voltage stresses on theintegrated CoolMOS, the clamp circuit and the outputovershoot and it helps to prevent saturation of thetransformer during Start-Up.
3.5 PWM Section
Oscillator
Duty Cycle
max
Gate Driver
0.75
Clock
&
G9
1
G8
PWM Section
FF1
R
S
Q
Soft Start
Comparator
PWM
Comparator
Current
Limiting
CoolMOS
Gate
Frequency
Jitter
Soft StartBlock
Figure 14 PWM Section Block
3.5.1 Oscillator
The oscillator generates a fixed frequency of 65KHzwith frequency jittering of 4% (which is 2.6KHz) at a
jittering period of 4ms.
A capacitor, a current source and current sink whichdetermine the frequency are integrated. In order toachieve a very accurate switching frequency, thecharging and discharging current of the implementedoscillator capacitor are internally trimmed. The ratio ofcontrolled charge to discharge current is adjusted to
reach a maximum duty cycle limitation of Dmax=0.75.Once the Soft Start period is over and when the IC goesinto normal operating mode, the switching frequency ofthe clock is varied by the control signal from the SoftStart block. Then the switching frequency is varied inrange of 65KHz 2.6KHz at period of 4ms.
3.5.2 PWM-Latch FF1
The output of the oscillator block provides continuouspulse to the PWM-Latch which turns on/off theintegrated CoolMOS. After the PWM-Latch is set, it isreset by the PWM comparator, the Soft Startcomparator or the Current -Limit comparator. When it is
in reset mode, the output of the driver is shut downimmediately.
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3.5.3 Gate Driver
VCC
1
PWM-Latch
CoolMOS
Gate Driver
Gate
Figure 15 Gate Driver
The driver-stage is optimized to minimize EMI and toprovide high circuit efficiency. The switch on speed isslowed down before it reaches the integratedCoolMOSturn on threshold. That is a slope control ofthe rising edge at the output of the driver (see Figure16).
t
(internal)
VGate
5V
ca. t = 130ns
Figure 16 Gate Rising Slope
Thus the leading switch on spike is minimized.Furthermore the driver circuit is designed to eliminatecross conduction of the output stage.
During power up, when VCC is below the undervoltagelockout threshold VVCCoff, the output of the Gate Driveris set to low in order to disable power transfer to thesecondary side.
3.6 Current Limiting
Current Limiting
C10
C12
&
0.34V
Leading
EdgeBlanking
220ns
G10
Propagation-Delay
Compensation
Vcsth
Active Burst
Mode
PWM LatchFF1
10k
D1
1pF
PWM-OP
CS
Figure 17 Current Limiting Block
There is a cycle by cycle peak current limiting operationrealized by the Current-Limit comparator C10. Thesource current of the integrated CoolMOSis sensedvia an external sense resistor RSense. By means ofRSense the source current is transformed to a sensevoltage VSense which is fed into the CS pin. If the voltageVSenseexceeds the internal threshold voltage Vcsth,thecomparator C10 immediately turns off the gate drive byresetting the PWM Latch FF1.
A Propagation Delay Compensation is added tosupport the immediate shut down of the integratedCoolMOSwith very short propagation delay. Thus theinfluence of the AC input voltage on the maximumoutput power can be reduced to minimal.
In order to prevent the current limit from distortionscaused by leading edge spikes, a Leading EdgeBlanking is integrated in the current sense path for thecomparators C10, C12 and the PWM-OP.
The output of comparator C12 is activated by the GateG10 if Active Burst Mode is entered. When it isactivated, the current limiting is reduced to 0.34V. Thisvoltage level determines the maximum power level in
Active Burst Mode.
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3.6.1 Leading Edge Blanking
t
VSense
Vcsth
tLEB
= 220ns
Figure 18 Leading Edge Blanking
Whenever the integrated CoolMOS
is switched on, aleading edge spike is generated due to the primary-side capacitances and reverse recovery time of thesecondary-side rectifier. This spike can cause the gatedrive to switch off unintentionally. In order to avoid apremature termination of the switching pulse, this spikeis blanked out with a time constant of tLEB= 220ns.
3.6.2 Propagation Delay Compensation
In case of over-current detection, there is alwayspropagation delay to switch off the integratedCoolMOS. An overshoot of the peak current Ipeak is
induced to the delay, which depends on the ratio of dI/dt of the peak current (see Figure 19).
t
ISense
ILimit
tPropagation Delay
IOvershoot1
Ipeak1
Signal1Signal2
IOvershoot2Ipeak2
Figure 19 Current Limiting
The overshoot of Signal2 is larger than of Signal1 dueto the steeper rising waveform. This change in theslope depends on the AC input voltage. PropagationDelay Compensation is integrated to reduce theovershoot due to dI/dt of the rising primary current.Thus the propagation delay time between exceedingthe current sense threshold Vcsthand the switching offof the integrated CoolMOS is compensated over
temperature within a wide range. Current Limiting isthen very accurate.
For example, Ipeak = 0.5A with RSense= 2. The currentsense threshold is set to a static voltage level Vcsth=1Vwithout Propagation Delay Compensation. A current
ramp of dI/dt = 0.4A/s, or dVSense/dt = 0.8V/s, and apropagation delay time of tPropagation Delay =180ns leadsto an Ipeakovershoot of 14.4%. With the propagationdelay compensation, the overshoot is only around 2%(see Figure 20).
0,9
0,95
1
1,05
1,1
1,15
1,2
1,25
1,3
0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 2
with compensat ion without compensat ion
dt
dVSense
s
V
Sense
V
V
Figure 20 Overcurrent Shutdown
The Propagation Delay Compensation is realized bymeans of a dynamic threshold voltage Vcsth(see Figure21). In case of a steeper slope the switch off of the
driver is earlier to compensate the delay.
t
Vcsth
VOSC
Signal1 Signal2
VSense Propagation Delay
max. Duty Cycle
off time
t
Figure 21 Dynamic Voltage Threshold Vcsth
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3.7 Control Unit
The Control Unit contains the functions for Active Burst
Mode and Auto Restart Mode. The Active Burst Modeand the Auto Restart Mode both have 20ms internalBlanking Time. For the Auto Restart Mode, a furtherextendable Blanking Time is achieved by addingexternal capacitor at BA pin. By means of this BlankingTime, the IC avoids entering into these two modesaccidentally. Furthermore those buffer time for theoverload detection is very useful for the application thatworks in low current but requires a short duration ofhigh current occasionally.
3.7.1 Basic and Extendable Blanking Mode
C3
4.0V
C4
4.0V
C5
1.35V
&
G5
&
G6
0.9V
S1
1
G2
Control Unit
Active
Burst
Mode
Auto
Restart
Mode
5.0VBA
FB
CBK
20msBlanking
Time
20ms
Blanking
Time
Spike
Blanking
30us
# IBK
Figure 22 Basic and Extendable Blanking Mode
There are 2 kinds of Blanking mode; basic mode andthe extendable mode. The basic mode is just aninternal set 20ms blanking time while the extendablemode has an extra blanking time by connecting anexternal capacitor to the BA pin in addition to the pre-set 20ms blanking time. For the extendable mode, thegate G5 is blocked even though the 20ms blanking timeis reached if an external capacitor CBKis added to BApin. While the 20ms blanking time is passed, the switchS1 is opened by G2. Then the 0.9V clamped voltage atBA pin is charged to 4.0V through the internal IBKconstant current. G5 is enabled by comparator C3.
After the 30us spike blanking time, the Auto RestartMode is activated.
For example, if CBK= 0.22uF, IBK= 13uA
Blanking time = 20ms + CBKx (4.0 - 0.9) / IBK= 72ms
In order to make the startup properly, the maximum CBKcapacitor is restricted to less than 0.65uF.
The Active Burst Mode has basic blanking mode onlywhile the Auto Restart Mode has both the basic and theextendable blanking mode.
3.7.2 Active Burst Mode
The IC enters Active Burst Mode under low loadconditions. With the Active Burst Mode, the efficiencyincreases significantly at light load conditions while stillmaintaining a low ripple on VOUTand a fast response onload jumps. During Active Burst Mode, the IC iscontrolled by the FB signal. Since the IC is alwaysactive, it can be a very fast response to the quickchange at the FB signal. The Start up Cell is kept OFFin order to minimize the power loss.
C4
4.0V
C6a
3.5V
C5
1.35V
FB
Control Unit
Active
Burst
Mode
Internal Bias
&G10
Current
Limiting
&
G6
C6b
3.05V
&
G11
20 ms Blanking
Time
Figure 23 Active Burst Mode
The Active Burst Mode is located in the Control Unit.Figure 23 shows the related components.
3.7.2.1 Entering Active Burst Mode
The FB signal is kept monitoring by the comparator C5.During normal operation, the internal blanking timecounter is reset to 0. Once the FB signal falls below1.35V, it starts to count. When the counter reach 20ms
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Functional Description
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and FB signal is still below 1.35V, the system entersthe Active Burst Mode. This time window prevents asudden entering into the Active Burst Mode due to
large load jumps.After entering Active Burst Mode, a burst flag is set andthe internal bias is switched off in order to reduce thecurrent consumption of the IC to approx. 450uA.
It needs the application to enforce the VCC voltageabove the Undervoltage Lockout level of 10.5V suchthat the Startup Cell will not be switched onaccidentally. Or otherwise the power loss will increasedrastically. The minimum VCC level during Active BurstMode depends on the load condition and theapplication. The lowest VCC level is reached at no loadcondition.
3.7.2.2 Working in Active Burst Mode
After entering the Active Burst Mode, the FB voltagerises as VOUT starts to decrease, which is due to theinactive PWM section. The comparator C6a monitorsthe FB signal. If the voltage level is larger than 3.5V, theinternal circuit will be activated; the Internal Bias circuitresumes and starts to provide switching pulse. In
Active Burst Mode the gate G10 is released and thecurrent limit is reduced to 0.34V, which can reduce theconduction loss and the audible noise. If the load atVOUTis still kept unchanged, the FB signal will drop to3.05V. At this level the C6b deactivates the internal
circuit again by switching off the internal Bias. The gateG11 is active again as the burst flag is set after enteringActive Burst Mode. In Active Burst Mode, the FBvoltage is changing like a saw tooth between 3.05V and3.5V (see figure 24).
3.7.2.3 Leaving Active Burst Mode
The FB voltage will increase immediately if there is ahigh load jump. This is observed by the comparator C4.Since the current limit is app. 34% during Active BurstMode, it needs a certain load jump to rise the FB signalto exceed 4.0V. At that time the comparator C4 resetsthe Active Burst Mode control which in turn blocks the
comparator C12 by the gate G10. The maximumcurrent can then be resumed to stabilize the VOUT.
1.35V
3.5V
4.0V
VFB
t
t
0.34V
1.03V
VCS
10.5V
VVCCt
t
450uA
IVCC
t
3.8mA
VOUT
t
20ms Blanking Time
Current limit level
during Active Burst
Mode
3.05V
Entering
Active Burst
Mode
Leaving
Active Burst
Mode
Blanking Timer
Figure 24 Signals in Active Burst Mode
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3.7.3 Protection Modes
The IC provides Auto Restart Mode as the protectionfeature. Auto Restart mode can prevent the SMPS from
destructive states. The following table shows therelationship between possible system failures and thecorresponding protection modes.
VCC Overvoltage Auto Restart Mode
Overtemperature Auto Restart Mode
Overload Auto Restart Mode
Open Loop Auto Restart Mode
VCC Undervoltage Auto Restart Mode
Short Optocoupler Auto Restart Mode
Auto restart enable Auto Restart Mode
Before entering the Auto Restart protection mode,some of the protections can have extended blankingtime to delay the protection and some needs to fastreact and will go straight to the protection. Overloadand open loop protection are the one can haveextended blanking time while Vcc Overvoltage, Overtemperature, Vcc Undervoltage, short opto-couplerand external auto restart enable will go to protectionright away.
After the system enters the Auto-restart mode, the IC
will be off. Since there is no more switching, the Vccvoltage will drop. When it hits the Vcc turn off threshold,the start up cell will turn on and the Vcc is charged bythe startup cell current to Vcc turn on threshold. The ICis on and the startup cell will turn off. At this stage, it willenter the startup phase (soft start) with switchingcycles. After the Start Up Phase, the fault condition ischecked. If the fault condition persists, the IC will go toauto restart mode again. If, otherwise, the fault isremoved, normal operation is resumed.
3.7.3.1 Auto Restart mode with extendedblanking time
Figure 25 Auto Restart Mode
In case of Overload or Open Loop, the FB exceeds4.0V which will be observed by comparator C4. Then
the internal blanking counter starts to count. When itreaches 20ms, the switch S1 is released. Then theclamped voltage 0.9V at VBAcan increase. When thereis no external capacitor CBK connected, the VBA willreach 4.0V immediately. When both the input signals at
AND gate G5 is positive, the Auto Restart Mode will beactivated after the extra spike blanking time of 30us iselapsed. However, when an extra blanking time isneeded, it can be achieved by adding an externalcapacitor, CBK. A constant current source of IBKwill startto charge the capacitor CBKfrom 0.9V to 4.0V after theswitch S1 is released. The charging time from 0.9V to4.0V are the extendable blanking time. If CBKis 0.22uF
and IBKis 13uA, the extendable blanking time is around52ms and the total blanking time is 72ms. In combiningthe FB and blanking time, there is a blanking windowgenerated which prevents the system to enter AutoRestart Mode due to large load jumps.
C3
4.0V
C4
4.0V
&
G5
0.9V
S1
1
G2
Control Unit
Auto
Restart
Mode
5.0VBA
FB
CBK
20ms
BlankingTime
SpikeBlanking
30us
# IBK
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C120.5V
Spike
Blanking
30us
&
G1
Thermal Shutdown
Tj>140C
Auto Restart
mode
VCC
C4
4.0V
Voltage
Reference
Control Unit
Auto Restart
Mode Reset
VVCC< 10.5V
FB
C2120us
Blanking
TimeVCC
25.5V
softs_period
BAAuto-restartEnable
Signal
TAE
C98us
Blanking
Time
0.3V
Stop
gate
drive
1ms
counterUVLO
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ICE3BR0665J
Functional Description
Version 2.3 18 19 Nov 2012
3.7.3.2 Auto Restart without extended blankingtime
Figure 26 Auto Restart mode
There are 2 modes of VCC overvoltage protection; oneis during soft start and the other is at all conditions.
The first one is VVCC voltage is > 20.5V and FB is > 4.0Vand during soft_start period and the IC enters AutoRestart Mode. The VCC voltage is observed bycomparator C1 and C4. The fault conditions are to
detect the abnormal operating during start up such asopen loop during light load start up, etc. The logic caneliminate the possible of entering Auto Restart mode ifthere is a small voltage overshoots of VVCC duringnormal operating.
The 2nd one is VVCC>25.5V and last for 120us and theIC enters Auto Restart Mode. This 25.5V Vcc OVPprotection is inactivated during burst mode.
The Thermal Shutdown block monitors the junctiontemperature of the IC. After detecting a junctiontemperature higher than 130C, the Auto Restart Modeis entered.
In case the pre-defined auto-restart features are not
sufficient, there is a customer defined external Auto-restart Enable feature. This function can be triggeredby pulling down the BA pin to < 0.33V. It can simply add
a trigger signal to the base of the externally addedtransistor, TAE at the BA pin. When the function isenabled, the gate drive switching will be stopped and
then the IC will enter auto-restart mode if the signalpersists. To ensure this auto-restart function will not bemis-triggered during start up, a 1ms delay time isimplemented to blank the unstable signal.
VCC undervoltage is the Vcc voltage drop below Vccturn off threshold. Then the IC will turn off and the startup cell will turn on automatically. And this leads to AutoRestart Mode.
Short Optocoupler also leads to VCC undervoltage asthere is no self supply after activating the internalreference and bias.
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Electrical Characteristics
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4 Electrical Characteristics
Note: All voltages are measured with respect to ground (Pin 5). The voltage levels are valid if other ratings arenot violated.
4.1 Absolute Maximum Ratings
Parameter Symbol Limit Values Unit Remarks
min. max.
Switching drain current, pulse width tplimited by Tj=150C
Is - 9.95 A
Pulse drain current, pulse width tplimitedby Tj=150C
ID_Puls - 15.75 A
Avalanche energy, repetitive tARlimited bymax. Tj=150C
1)
1) Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f
EAR - 0.47 mJ
Avalanche current, repetitive tARlimited bymax. Tj=150C
1)IAR - 2.5 A
VCC Supply Voltage VVCC -0.3 27 V
FB Voltage VFB -0.3 5.5 VBA Voltage VBA -0.3 5.5 V
CS Voltage VCS -0.3 5.5 V
Junction Temperature Tj -40 150 C Controller & CoolMOS
Storage Temperature TS -55 150 C
Thermal ResistanceJunction -Ambient
RthJA - 90 K/W
Soldering temperature, wavesolderingonly allowed at leads
Tsold - 260 C 1.6mm (0.063in.) fromcase for 10s
ESD Capability (incl. Drain Pin) VESD
- 2 kV Human body model2)
2) According to EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5kseries resistor)
Note: Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destructionof the integrated circuit. For the same reason make sure, that any capacitor that will be connected to pin 4(VCC) is discharged before assembling the application circuit.Ta=25C unless otherwise specified.
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4.2 Operating Range
Note: Within the operating range the IC operates as described in the functional description.
Parameter Symbol Limit Values Unit Remarks
min. max.
VCC Supply Voltage VVCC VVCCoff 25 V Max value limited due to Vcc OVP
Junction Temperature ofController
TjCon -25 130 C Max value limited due to thermalshut down of controller
Junction Temperature ofCoolMOS
TjCoolMOS -25 150 C
4.3 Characteristics
4.3.1 Supply Section
Note: The electrical characteristics involve the spread of values within the specified supply voltage and junctiontemperature range TJfrom 25 C to 125 C. Typical values represent the median values, which arerelated to 25C. If not otherwise stated, a supply voltage of VCC= 18 V is assumed.
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Start Up Current IVCCstart - 150 250 A VVCC =17V
VCC Charge Current IVCCcharge1 - - 5.0 mA VVCC = 0V
IVCCcharge2 0.55 0.9 1.60 mA VVCC = 1V
IVCCcharge3 - 0.7 - mA VVCC =17V
Leakage Current ofStart Up Cell and CoolMOS
IStartLeak - 0.2 50 A VDrain = 450Vat Tj=100C
Supply Current withInactive Gate
IVCCsup1 - 1.5 2.5 mA
Supply Current with Active Gate IVCCsup2 - 3.8 4.2 mA IFB= 0A
Supply Current inAuto Restart Mode with Inactive
Gate
IVCCrestart - 250 - A IFB= 0A
Supply Current in Active BurstMode with Inactive Gate
IVCCburst1 - 450 950 A VFB= 2.5V
IVCCburst2 - 450 950 A VVCC = 11.5V,VFB= 2.5V
VCC Turn-On ThresholdVCC Turn-Off ThresholdVCC Turn-On/Off Hysteresis
VVCConVVCCoffVVCChys
17.09.8-
18.010.57.5
19.011.2-
VVV
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Electrical Characteristics
4.3.2 Internal Voltage Reference
Parameter Symbol Limit Values Unit Test Conditionmin. typ. max.
Trimmed Reference Voltage VREF 4.90 5.00 5.10 V measured at pin FBIFB= 0
4.3.3 PWM Section
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Fixed Oscillator Frequency fOSC1 56.5 65.0 73.5 kHz
fOSC2 59.8 65.0 70.2 kHz Tj = 25C
Frequency Jittering Range fjitter - 2.6 - kHz Tj = 25C
Frequency Jittering period Tjitter - 4.0 - ms Tj = 25C
Max. Duty Cycle Dmax 0.70 0.75 0.80
Min. Duty Cycle Dmin 0 - - VFB< 0.3V
PWM-OP Gain AV 3.1 3.3 3.5
Voltage Ramp Offset VOffset-Ramp - 0.67 - V
VFBOperating Range Min Level VFBmin - 0.5 - V
VFBOperating Range Max level VFBmax - - 4.3 V CS=1V, limited byComparator C41)
1) The parameter is not subjected to production test - verified by design/characterization
FB Pull-Up Resistor RFB 9 15.4 22 k
4.3.4 Soft Start time
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Soft Start time tSS - 20.0 - ms
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4.3.6 Current Limiting
Parameter Symbol Limit Values Unit Test Conditionmin. typ. max.
Peak Current Limitation(incl. Propagation Delay)
Vcsth 0.96 1.03 1.10 V dVsense / dt = 0.6V/s(see Figure 20)
Peak Current Limitation duringActive Burst Mode
VCS2 0.29 0.34 0.38 V
Leading Edge Blanking tLEB - 220 - ns
CS Input Bias Current ICSbias -1.5 -0.2 - A VCS =0V
4.3.7 CoolMOSSection
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Drain Source Breakdown Voltage V(BR)DSS 650 - - V Tj= 110CRefer to Figure 30 forother V(BR)DSSindifferent Tj
Drain Source On-Resistance RDSon --
0.651.37
0.751.58
Tj= 25CTj=125C
1)
1) The parameter is not subjected to production test - verified by design/characterization
at ID= 2.5A
Effective output capacitance, energyrelated
Co(er) - 26 - pF VDS= 0V to 480V1)
Rise Time trise - 302)
2) Measured in a Typical Flyback Converter Application
- ns
Fall Time tfall - 302) - ns
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CoolSET-F3R
ICE3BR0665J
Typical CoolMOSPerformance Characteristic
Version 2.3 24 19 Nov 2012
5 Typical CoolMOSPerformance Characteristic
Safe Operating Area for ICE3A(B)R0665J
ID= f ( VDS)
parameter : D = 0, TC= 25deg.C
0.0001
0.001
0.01
0.1
1
10
100
1 10 100 1000
VDS[V]
ID[
A]
DC
tp = 1000ms
tp = 1ms tp = 10ms
tp = 100ms
tp = 0.1ms
tp = 0.01ms
Figure 27 Safe Operating area (SOA) curve for ICE3BR0665J
SOA temperature derating coefficient curve
( package dissipation ) for F3 & F2 CoolSET
0
20
40
60
80
100
120
0 20 40 60 80 100 120 140
Ambient/Case temperature Ta/Tc [deg.C]
Ta : DIP, Tc : TO220
SOAtemperaturederatingcoefficient[%]
Figure 28 SOA temperature derating coefficient curve
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Allowable Power Dissipation for F3 CoolSET in DIP-8 package
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 20 40 60 80 100 120 140
Ambient temperature, Ta[deg.C]
AllowablePowerDissipation,
Ptot[W]
CoolSET-F3R
ICE3BR0665J
Typical CoolMOSPerformance Characteristic
Version 2.3 25 19 Nov 2012
Figure 29 Power dissipation; Ptot=f(Ta)
540
580
620
660
700
-60 -20 20 60 100 140 180Tj[C]
V
BR(DSS)[V]
Figure 30 Drain-source breakdown voltage; VBR(DSS)=f(Tj)
-
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CoolSET-F3R
ICE3BR0665J
Input Power Curve
Version 2.3 26 19 Nov 2012
6 Input Power Curve
Two input power curves giving the typical input power versus ambient temperature are showed below;Vin=85Vac~265Vac (Figure 31) and Vin=230Vac+/-15% (Figure 32). The curves are derived based on a typicaldiscontinuous mode flyback model which considers either 50% maximum duty ratio or 100V maximum secondaryto primary reflected voltage (higher priority). The calculation is based on no copper area as heatsink for the device.The input power already includes the power loss at input common mode choke, bridge rectifier and theCoolMOS.The device saturation current (ID_Puls@ Tj=125C) is also considered.
To estimate the output power of the device, it is simply multiplying the input power at a particular operating ambienttemperature with the estimated efficiency for the application. For example, a wide range input voltage (Figure 31),operating temperature is 50C, estimated efficiency is 85%, then the estimated output power is 42W (49W * 85%).
Ambient Temperature [C]
Inputpower(85~265Vac)[
W]
PI-001-ICE3BR0665J_85Vac
0
6
12
18
24
30
36
42
48
54
60
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Figure 31 Input power curve Vin=85~265Vac; Pin=f(Ta)
Ambient Temperature [C]
Inputpower(230Vac
)[W]
PI-002-ICE3BR0665J_
230Vac
0
10
20
30
40
50
60
70
80
90
100
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Figure 32 Input power curve Vin=230Vac+/-15%; Pin=f(Ta)
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CoolSET-F3R
ICE3BR0665J
Outline Dimension
Version 2.3 27 19 Nov 2012
7 Outline Dimension
PG-DIP-8
(Plastic Dual In-Line Outline)
Figure 33 PG-DIP-8 (Pb-free lead plating Plastic Dual-in-Line Outline)
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CoolSET-F3R
ICE3BR0665J
Marking
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8 Marking
Marking
Figure 34 Marking for ICE3BR0665J
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CoolSET-F3R
ICE3BR0665J
Schematic for recommended PCB layout
Version 2.3 29 19 Nov 2012
9 Schematic for recommended PCB layout
C11
bulk cap
R11
D11
C12
IC12
R12
C13
C16
C15
C14
D13R14
R23 R22
IC21
C23R24
C22
R21
R25
GND
Vo
D21
C21
F3 CoolSET schematic for recommended PCB layout
R13
Z11
TR1
N
L
BR1
C2
Y-CAP
C3
Y-CAP
C1
X-CAP
L1
FUSE1
C4
Y-CAP
GND
Spark Gap 3
Spark Gap 4D11
Spark Gap 1
Spark Gap 2
FB
CS
GND NC
BA VCCF3
DRAIN
CoolSET
IC11
*
Figure 35 Schematic for recommended PCB layout
General guideline for PCB layout design using F3/F3R CoolSET(refer to Figure 35):
1. Star Ground at bulk capacitor ground, C11:
Star Ground means all primary DC grounds should be connected to the ground of bulk capacitor C11separately in one point. It can reduce the switching noise going into the sensitive pins of the CoolSETdeviceeffectively. The primary DC grounds include the followings.
a. DC ground of the primary auxiliary winding in power transformer, TR1, and ground of C16 and Z11.
b. DC ground of the current sense resistor, R12
c. DC ground of the CoolSETdevice, GND pin of IC11; the signal grounds from C13, C14, C15 and collectorof IC12 should be connected to the GND pin of IC11 and then star connect to the bulk capacitor ground.
d. DC ground from bridge rectifier, BR1
e. DC ground from the bridging Y-capacitor, C4
2. High voltage traces clearance:
High voltage traces should keep enough spacing to the nearby traces. Otherwise, arcing would incur.
a. 400V traces (positive rail of bulk capacitor C11) to nearby trace: > 2.0mm
b. 600V traces (drain voltage of CoolSETIC11) to nearby trace: > 2.5mm
3. Filter capacitor close to the controller ground:
Filter capacitors, C13, C14 and C15 should be placed as close to the controller ground and the controller pinas possible so as to reduce the switching noise coupled into the controller.
Guideline for PCB layout design when >3KV lightning surge test applied (refer to Figure 35):
1. Add spark gap
Spark gap is a pair of saw-tooth like copper plate facing each other which can discharge the accumulatedcharge during surge test through the sharp point of the saw-tooth plate.
a. Spark Gap 3 and Spark Gap 4, input common mode choke, L1:
Gap separation is around 1.5mm (no safety concern)
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CoolSET-F3R
ICE3BR0665J
Schematic for recommended PCB layout
Version 2.3 30 19 Nov 2012
b. Spark Gap 1 and Spark Gap 2, Live / Neutral to GROUND:
These 2 Spark Gaps can be used when the lightning surge requirement is >6KV.
230Vac input voltage application, the gap separation is around 5.5mm115Vac input voltage application, the gap separation is around 3mm
2. Add Y-capacitor (C2 and C3) in the Live and Neutral to ground even though it is a 2-pin input
3. Add negative pulse clamping diode, D11 to the Current sense resistor, R12:
The negative pulse clamping diode can reduce the negative pulse going into the CS pin of the CoolSETandreduce the abnormal behavior of the CoolSET. The diode can be a fast speed diode such as IN4148.
The principle behind is to drain the high surge voltage from Live/Neutral to Ground without passing through thesensitive components such as the primary controller, IC11.
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