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Si1433DHVishay SiliconixNew Product

Document Number: 72323S-31668Rev. A, 11-Aug-03

www.vishay.com 1

P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V) rDS(on) () ID (A)

-300.150 @ VGS = -10 V -2.2

-300.260 @ VGS = -4.5 V -1.6

SOT-363SC-70 (6-LEADS)

6

4

1

2

3

5

Top View

D

D

G

D

D

S

Marking Code

BE XX

Lot Traceabilityand Date Code

Part # Code

YY

Ordering Information: Si1433DH-T1

ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED)

Parameter Symbol 5 secs Steady State Unit

Drain-Source Voltage VDS -30V

Gate-Source Voltage VGS 20V

Continuous Drain Current (TJ = 150C)aTA = 25C

ID-2.2 -1.9

Continuous Drain Current (TJ = 150C)aTA = 85C

ID-1.7 -1.4

APulsed Drain Current IDM -8

A

Continuous Diode Current (Diode Conduction)a IS -1.4 -0.9

Maximum Power DissipationaTA = 25C

PD1.45 0.95

WMaximum Power DissipationaTA = 85C

PD0.75 0.5

W

Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

M i J ti t A bi ta t 5 sec

R65 85

Maximum Junction-to-AmbientaSteady State

RthJA 105 130 C/W

Maximum Junction-to-Foot (Drain) Steady State RthJF 38 48

C/W

Notesa. Surface Mounted on 1 x 1 FR4 Board.

Si1433DHVishay Siliconix New Product

www.vishay.com 2

Document Number: 72323S-31668Rev. A, 11-Aug-03

SPECIFICATIONS (TJ = 25C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Gate Threshold Voltage VGS(th) VDS = VGS, ID = -100 A -1 -3 V

Gate-Body Leakage IGSS VDS = 0 V, VGS = 8 V 100 nA

Zero Gate Voltage Drain Current IDSSVDS = -16 V, VGS = 0 V -1

AZero Gate Voltage Drain Current IDSSVDS = -16 V, VGS = 0 V, TJ = 85C -5

A

On-State Drain Currenta ID(on) VDS = -5 V, VGS = -4.5 V -4 A

Drain Source On State Resistancea rVGS = -10 V, ID = -2.2 A 0.120 0.150

Drain-Source On-State Resistancea rDS(on)VGS = -4.5 V, ID = -1.6 A 0.210 0.260

Forward Transconductancea gfs VDS = -10 V, ID = -2.2 A 4 S

Diode Forward Voltagea VSD IS = -1.2 A, VGS = 0 V -0.85 -1.2 V

Dynamicb

Total Gate Charge Qg 3.1 5

Gate-Source Charge Qgs VDS = -15 V, VGS = -4.5 V, ID = -2.2 A 1.0 nC

Gate-Drain Charge Qgd 1.6

Turn-On Delay Time td(on) 11 17

Rise Time tr VDD = -15 V, RL = 15 17 26

nsTurn-Off Delay Time td(off)

VDD = -15 V, RL = 15 ID -1 A, VGEN = -10 V, RG = 6 18 27

ns

Fall Time tf 13 20

Notesa. Pulse test; pulse width 300 s, duty cycle 2%.b. Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25C UNLESS NOTED)

0

1

2

3

4

5

6

7

8

0 1 2 3 4 50

1

2

3

4

5

6

7

8

0 1 2 3 4 5

Output Characteristics Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

- D

rain

Cur

rent

(A

)I

D

VGS - Gate-to-Source Voltage (V)

- D

rain

Cur

rent

(A

)I

D

VGS = 10 thru 5 V

4 V

TC = -55C

125C

3 V

25C

Si1433DHVishay SiliconixNew Product

Document Number: 72323S-31668Rev. A, 11-Aug-03

www.vishay.com 3

TYPICAL CHARACTERISTICS (25C UNLESS NOTED)

0.00

0.15

0.30

0.45

0.60

0.75

0 1 2 3 4 5 6 7 80

70

140

210

280

350

0 6 12 18 24 30

On-Resistance vs. Drain Current

VDS - Drain-to-Source Voltage (V)

C

- C

apac

itanc

e (p

F)

- O

n-R

esis

tanc

e (

r DS

(on)

)

ID - Drain Current (A)

Capacitance

VGS = 4.5 V

Coss

Ciss

VGS = 10 V

Crss

0

2

4

6

8

10

0 1 2 3 4 5 60.6

0.8

1.0

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

Gate Charge

- G

ate-

to-S

ourc

e V

olta

ge (

V)

Qg - Total Gate Charge (nC)

VG

S

On-Resistance vs. Junction Temperature

VGS = 10 VID = 2.2 A

TJ - Junction Temperature (C)

(Nor

mal

ized

)-

On-

Res

ista

nce

(r D

S(o

n)

)

VDS = 15 VID = 2.2 A

1.2 1.5

0.1

1

10

0.00 0.3 0.6 0.9

TJ = 25C

TJ = 150C

Source-Drain Diode Forward Voltage

VSD - Source-to-Drain Voltage (V)

- S

ourc

e C

urre

nt (

A)

I S

0.00

0.14

0.28

0.42

0.56

0.70

0 2 4 6 8 10

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

- O

n-R

esis

tanc

e (

r DS

(on)

)

ID = 2.2 A

Si1433DHVishay Siliconix New Product

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Document Number: 72323S-31668Rev. A, 11-Aug-03

TYPICAL CHARACTERISTICS (25C UNLESS NOTED)

0

7

35

Pow

er (

W)

Single Pulse Power, Junction-to-Ambient

Time (sec)

21

28

10-3 10-2 1 10 60010-110-4 100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

Nor

mal

ized

Effe

ctiv

e T

rans

ient

The

rmal

Impe

danc

e

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 105C/W

3. TJM - TA = PDMZthJA(t)

t1t2

t1t2

Notes:

4. Surface Mounted

PDM

0.1 1010.010.001

14

Safe Operating Area

VDS - Drain-to-Source Voltage (V)

10

1

0.1 1 10 100

0.01

TC = 25CSingle Pulse

- D

rain

Cur

rent

(A

)I D

0.1

Limited byrDS(on)

1 ms

10 ms

100 ms1 s

10 s

dc

-0.4

-0.2

0.0

0.2

0.4

0.6

-50 -25 0 25 50 75 100 125 150

Threshold Voltage

TJ - Temperature (C)

ID = 250 A

Var

ianc

e (V

)V

GS

(th)

Si1433DHVishay SiliconixNew Product

Document Number: 72323S-31668Rev. A, 11-Aug-03

www.vishay.com 5

TYPICAL CHARACTERISTICS (25C UNLESS NOTED)

10-3 10-2 1 1010-110-4

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Foot

Square Wave Pulse Duration (sec)

Nor

mal

ized

Effe

ctiv

e T

rans

ient

The

rmal

Impe

danc

e