critical review of euv reticle inspection...
TRANSCRIPT
Critical Review of EUV ReticleInspection Options2009 International Symposium on EUVL
Daniel WackOctober 20, 2009
| 2009 International EUVL Symposium Prague2
Agenda
Inspection challenges
Near-Term Solutions
Long-Term Alternatives
Roadmap
Summary
| 2009 International EUVL Symposium Prague3
Inspection is facing a wide set of requirements
Need: Single system to support all litho technologies
Challenges
Small pitch and linewidths
Reflective imaging technique
“Multi-Layer” defects
No pellicles
Challenges
Critical layer-to-layer CD defects
Reticle contribution to overlay budget ~35%
Challenges
Small feature sizes
Mixed feature sizes
Irregular shapes
Defect impact assessment
| 2009 International EUVL Symposium Prague4
Teron 610: Inspect the unexpected…
High-powered 193nm laser
High NA 55nm pixel
Ultra-low aberration optics
Advanced photo-contamination control
New autofocus
High speed image sensor & data path
Simultaneous T&R operation
World-class image compute power
Large-file high-speed data prep
Advanced thermal & vibration control
Advanced defect detection algorithms
Reticle Defect Inspection for 2Xnm and beyond
| 2009 International EUVL Symposium Prague5
Defect Capture Improvement on 193 EPSM L/S
Teron 610Die-to-database
55nm pixel
TeraScanXRDie-to-database
72nm pixel
Teron 610 Improves Defect Capture in Tight Pitch
145nm dark line 145nm 1:1 145nm clear lineImprovement ~ 30% ~ 40% ~ 35%
Titan v2 EPSMTest Reticle
Typical 100% captureDefect size, nm
9 9 0 012 12 11 1111 11 12 1211 11 19 1919 19 22 2222 22 22 2229 29 28 2829 29 31 3132 32 35 3538 38 34 3438 38 37 3744 44 46 4646 46 48 48
0 0 0 00 0 0 09 9 0 0
12.5 12 0 018.7 19 0 019.7 20 0 021.8 22 0 0
25 25 21 2133.2 33 28 2829.4 29 31 3137.7 38 37 3739.5 39 35 3543.5 43 43 43
9 9 9 90 0 0 00 0 16 1612 12 16 1612 12 19 1910 10 22 2216 16 25 2522 22 25 2525 25 33 3328 28 31 3131 31 38 3838 38 44 4434 34 41 41
| 2009 International EUVL Symposium Prague6
Resolution for EUV Exists• 55nm pixel already shows good
resolution down to 25nm HP node on EUV masks
6
Teron platform is well suited for EUV inspection
6xx p55 Reflected Light Imaging
Controlled, in-tool reticle handling environment already exists
• Reticle Load Station – New station with ISO1 cleanliness (vs. ISO2)
• Stage – improved vibration and thermal• Environment• Tighter IAS and RLS vibration specifications vs. 500 Series
• thermal control in RLS, stage, optics• Particulate filters (ULPA)• AMC filters (user specifies)
• Need to add EUV Pod/Reticle Handling capability
Environmental Rack
AMCHeater
Blower
Cooler
| 2009 International EUVL Symposium Prague7
Teron provides damage-free inspection of EUV Masks
Sematech analysis of EUV blank (Ru) exposed to full power scans
EUV reflectivity and XRR show no change through 50x scans
Change of EUV reflectivity
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
Wavelength (Ǻ)
Ref
lect
ivity
Intensity 1, 2XIntensity 1, 10XIntensity 1, 20XIntensity 1, 50XIntensity 0Intensity 0.8, 20XIntensity 0.5, 20XIntensity 0.2, 20XIntensity 0.1, 20X
Change of XRR spetrum
1.00E+01
1.00E+02
1.00E+03
1.00E+04
1.00E+05
1.00E+06
1.00E+07
0 1 2 3 4 5 6 7 8 9 10
2 theta
Inte
nsity
Intensity 1, 2XIntensity 1, 10XIntensity 1, 20XIntensity 1, 50XIntensity 0Intensity 0.8, 20XIntensity 0.5, 20XIntensity 0.2, 20XIntensity 0.1, 20X
XRR
| 2009 International EUVL Symposium Prague8
6xx vs 5xx Reflected Light Images of EUV Mask
180nm 154nm 90nm110nm126nm
6xx p55
5xx p72
Reticle HP
Teron shows good contrast on 22nm HP L/S Patterns
| 2009 International EUVL Symposium Prague9
Teron 610 Sensitivity Results – 32nm HP EUVIMEC Programmed Absorber Defect EUV Mask
• Mask capture rates are from three scans of each defect on each die
Teron 610 captured all printing programmed defects
| 2009 International EUVL Symposium Prague10
Teron captures Phase Defects on EUV BlanksExample: natural pit, 3.7 x 45.4 nm
-100 nm -50 0 50 100
100 nm
Focus(wafer scale)
AIT(LBNL)
Teron™610
30 21 -6 -15 -24Focus (au)
Peak DUV raw signal = 5.1 %SNR = 19 See S. Stokowski presentation Wed 10:10am
EUV Blank provided by AGC, AIT images from Sematech
| 2009 International EUVL Symposium Prague11
Long Term EUV Mask Qualification Targets & Scorecard
Should Meet Target GoodMay Meet Target MediumDifficult to Meet Target Poor
Node (nm HP) 32 22 16 22 16 16 16 16 16 16
Inspection System 6XX+ 6XX+EUV Actinic 28XX+ EBI+ 28XX+ EBI+
Inspection Point Mask Mask Mask Mask Mask Wafer WaferMask Damage None None None Good Good Medium Medium Medium Good GoodResolution (vs. DR) Medium Poor Good Poor Good Poor Medium
Sensitivity ML Blank (nm z) 2.2 1.5 1.1 Good Poor Good Poor Poor Poor Medium
Sensitivity Mask 1D CD (nm) 13 9 6 Good Poor Good Poor Good Poor MediumSensitivity Mask 2D (nm) 26 18 13 Good Poor Good Poor Good Poor MediumCycletime Mask Shop (Hours) 4 4 4 Good Good Medium Good Poor Poor PoorSensitivity Mask Particles (nm) 26 18 13 Medium Poor Good Poor Good Poor MediumCycletime Requal (Hours) 2 2 2 Medium Medium Medium Good Poor Good PoorDevelopment Cost Good Good Poor Medium Good Good GoodTool Cost Medium Medium Poor Good Good Good Good
Requirements Inspection Systems
Actinic Pattern Inspection is the leading candidate for < 20nm HP
| 2009 International EUVL Symposium Prague12
EUVL Blank & Patterned Mask Inspection
DRAM Half-Pitch (nm) 32 22 16 11
Mask Damage None None None None
Resolution (vs. DR)
Sensitivity ML Blank (nm z) 2.2 1.5 1.1 0.8
Sensitivity Mask 1D CD (nm) 13 9 6 4
Sensitivity Mask 2D (nm) 26 18 13 9
Cycletime Mask Shop (Hours) 4 4 4 4
Sensitivity Mask Particles (nm) 26 18 13 9
Cycletime Requal (Hours) 2 2 2 2
InspectionRequirements
6XX (R&D)6XX+ (Prod)
EUV Actinic7XX Optics
Blank InspPattern Insp
Blank InspPattern Insp
• Risk/Cost-sharing• Sematech consortium
$
Teron (λ 193 nm)
7XX (λ 13.5 nm) Pilot tools 2013Production upgrade 2015
AIMS sub-system commonalities?
| 2009 International EUVL Symposium Prague13
TeronProduction EUV Blank & Pattern Insp• Enhanced optical imaging • Production-worthy EUV mask handling & cleanliness
Production EUV Blank & Pattern Insp• Full power high-brightness EUV source• High Speed Scanning
Initial EUV Blank & Pattern Insp• High NA reflected imaging• High speed scanning
• Low noise• No damage to EUV masks
Pilot 7xx: Actinic Blank Insp + R&D pattern Insp• Prototype hi-brightness EUV source• Low-speed scanning• Vacuum platform incl. contam ctrl & scanning stage• EUV microscope w/ bright-field imaging
KT Roadmap: EUVL Blank & Patterned Mask Inspection6XX enables 22nmHP EUVL. 7XX actinic inspection required ≤16nmHP.
CY2018CY2017CY2016CY2015CY2014CY2013CY2012CY2011CY2010CY2009
22 n
m H
P16
nm
HP
Development of EUV blank and patterning Production
Production
Development of EUV blank and patterning
7xx (λ=13.5nm) Development
6xx+
2 4 2 1# actinic tools: 1
β
Study
Launch
Actinic
| 2009 International EUVL Symposium Prague14
KLA-Tencor EUV Reticle Inspection Overview
K-T will provide the needed Inspection systems to support EUV development and production requirements.
We are collaborating with key EUV industry customers and leading suppliers to define near-term and long-term EUV requirements and solutions
For near-term 22 nm Half-Pitch EUV requirements,Enhancements to K-T 6xx reticle inspection platform will enable EUV Blank and Patterned Mask inspection and Reticle Requal.
For long-term sub-20 nm EUV requirements, There are several potential technology alternatives, each requiring new techniques and significant development.Investigation of actinic pattern inspection concepts is underway, and should be accelerated via consortium funding
| 2009 International EUVL Symposium Prague15
Sungmin Huh, Patrick Kearney, Abbas Rastegar, Frank Goodwin, Stefan Wurm, C.C. Lin
Toshio Nakajima, Masahiro Kishimoto, Mitsuhiko Komakine
Kenneth Goldberg, Iacopo Mochi
Ted Liang, Andy Ma
Acknowledgments
INTEL