© 2011 by SYSTEM PLUS CONSULTING, all rights reserved. CREE 1200V 80mohm MOSJFET – CMF20120 1

9 rue Alfred Kastler - BP 10748 - 44307 Nantes Cedex 3 - France

Phone : +33 (0) 240 180 916 - email : info@systemplus.fr - website : www.systemplus.fr

April 2011 - Version 1

Written by: Sylvain HALLEREAU

DISCLAIMER : System Plus Consulting provides cost studies based on its knowledge of the manufacturing and selling prices of electronic components and systems. The given values are realistic

estimates which do not bind System Plus Consulting nor the manufacturers quoted in the report. System Plus Consulting is in no case responsible for the consequences related to the use which is

made of the contents of this report. The quoted trademarks are property of their owners.

http://www.systemplus.fr/http://www.systemplus.fr/

© 2011 by SYSTEM PLUS CONSULTING, all rights reserved. CREE 1200V 80mohm MOSJFET – CMF20120 2

Table of Contents

Executive Summary

Table of Contents

Reverse Costing Methodology

1. Physical Analysis

Physical Analysis Methodology

Package

Die Overview

Guard Ring

Passivation

Metal Layer

MOSFET Gate

SIMS Analysis

Substrate and epitaxy

Back Side

Thickness Synthesis

MOSFET Structure &Characteristics

2. Manufacturing Process

Process Flow

Wafer Fabrication Unit

2

4

5

6

37

3. Manufacturing Cost

Wafer Cost data

Yields Explanation

MOSFET Unprobed Wafer Cost

Wafer Cost per process steps

Equipment Cost per Family

Material Cost per Family

Die per Wafer and Probe Test

Probe Test

Dicing and Package

Final Test Cost

MOSFET Die Cost

Yields synthesis

Price estimation

Contact

Glossary

42

57

61

62

http://www.systemplus.fr/

© 2011 by SYSTEM PLUS CONSULTING, all rights reserved. CREE 1200V 80mohm MOSJFET – CMF20120 3

Die in the Package

Gate bond

Source bond The Drain is directly soldered on the

package leadframe with SAC solder.

5 Aluminum wire bonds :

Gate bond : 7mm and 200µm of diameter.

Source bond : 7mm and 200µm of diameter.

G

S D

http://www.systemplus.fr/

© 2011 by SYSTEM PLUS CONSULTING, all rights reserved. CREE 1200V 80mohm MOSJFET – CMF20120 4

Gate contacts

Source area

Source

SEM views : Die after the delayering. The passivation and aluminum layer are etched.

Die Overview - Delayering

Gate

Area where the

aluminum pad is in

contact with

source doping

Gate under an

SiO2 dielectric

layer.

http://www.systemplus.fr/

© 2011 by SYSTEM PLUS CONSULTING, all rights reserved. CREE 1200V 80mohm MOSJFET – CMF20120 5

SEM view : metal and passivation layer details

Si3N4 layer

Optical view : passivation details

Aluminum layer

Passivation borderline

Passivation Layer

Pad

http://www.systemplus.fr/

© 2011 by SYSTEM PLUS CONSULTING, all rights reserved. CREE 1200V 80mohm MOSJFET – CMF20120 6

MOSFET Gate

Gate in Polysilicon

Gate in Polysilicon

SiO2 : 3 layers of SiO2 are deposited

on the gate to insulate it.

Thin gate oxide =

52nm

SEM view : Gate detail, small recess

The recesses may be done to eliminate the first atomic

layers damaged by the ionic implantations.

SEM view : Gate detail high magnification

Second SiO2 thin layer

First SiO2 thin layer

Third SiO2 thin layer

http://www.systemplus.fr/

© 2011 by SYSTEM PLUS CONSULTING, all rights reserved. CREE 1200V 80mohm MOSJFET – CMF20120 7

SIMS analysis

http://www.systemplus.fr/

© 2011 by SYSTEM PLUS CONSULTING, all rights reserved. CREE 1200V 80mohm MOSJFET – CMF20120 8

Process Flow (1/3)

http://www.systemplus.fr/

© 2011 by SYSTEM PLUS CONSULTING, all rights reserved. CREE 1200V 80mohm MOSJFET – CMF20120 9

MOSFET Unprobed Wafer Cost

• The main part of the wafer cost is due to the

raw wafer (XX.X%).

• The manufacturing yield is around XX% in 2011.

Details of the cost per step are given in the Excel

Spreadsheet

http://www.systemplus.fr/

© 2011 by SYSTEM PLUS CONSULTING, all rights reserved. CREE 1200V 80mohm MOSJFET – CMF20120 10

Selling Price

Note: These calculated selling prices are for large quantities purchased directly from CREE.

http://www.systemplus.fr/