coolirigbt ultrafast soft recovery diode
TRANSCRIPT
E
G
n-channel
C
*Qualification standards can be found at http://www.irf.com/
ULTRAFAST IGBT WITHULTRAFAST SOFT RECOVERY DIODE
Absolute Maximum RatingsStresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; andfunctional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured underboard mountedand still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified.
G C EG a te C o l le c to r E m it te r
AUTOMOTIVE GRADE
VCES = 600V
VCE(on) typ. = 1.8V
IC@TC=100°C = 41A
TJ max = 175°C
CooliRIGBT ™Features
• Designed And Qualified for Automotive Applications• Ultra Fast Switching IGBT:70-200kHz• Extremely Low Switching Losses• Maximum Junction Temperature 175 °C• Square RBSOA• Positive VCE (on) Temperature Coefficient
Applications• DC-DC Converter• PFC
Benefits• Optimized High Frequency Switching Applications• Rugged Transient Performance for Increased
Reliability• Excellent Current Sharing in Parallel Operation
Parameter Max. UnitsVCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 62IC @ TC = 100°C Continuous Collector Current 41INOMINAL Nominal Current @ 200kHz 20
ICM Pulse Collector Current 84
ILM Clamped Inductive Load Current 112
IF @ TC = 25°C Diode Continous Forward Current 46.1IF @ TC = 100°C Diode Continous Forward Current 30
IFRM Maximum Repetitive Forward Current 112
VGE Gate-to-Emitter Voltage ±20 V
PD @ TC = 25°C Maximum Power Dissipation 625PD @ TC = 100°C Maximum Power Dissipation 313TJ Operating Junction and
TSTG Storage Temperature Range
Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal ResistanceParameter Min. Typ. Max. Units
RθJC (IGBT) Junction-to-Case-(each IGBT) ––– ––– 0.24
RθJC (Diode) Junction-to-Case-(each Diode) ––– ––– 1.78
RθCS Case-to-Sink (flat, greased surface) ––– 0.24 –––
RθJA Junction-to-Ambient (typical socket mount) ––– ––– 40
––– 6.0 (0.21) ––– g (oz)
-55 to +175
°C/W
A
W
°C
!
TO-247ACAUIRGP65G40D0
G CE
TO-247ADAUIRGF65G40D0
Base part number Package Type Orderable Part NumberForm Quantity
AUIRGP65G40D0 TO-247AC Tube 25 AUIRGP65G40D0AUIRGF65G40D0 TO-247AD Tube 25 AUIRGF65G40D0
Standard Pack
G CE
!
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.18 — V/°C VGE = 0V, IC = 1.0mA (25°C-175°C)
— 1.4 — IC = 12A, VGE = 15V, TJ = 25°C
— 1.8 2.2 IC = 20A, VGE = 15V, TJ = 25°C
VCE(on) Collector-to-Emitter Saturation Voltage — 1.9 — IC = 12A, VGE = 15V, TJ = 150°C
— 2.6 — V IC = 20A, VGE = 15V, TJ = 150°C
— 2.2 — IC = 12A, VGE = 15V, TJ = 175°C
— 3.0 — IC = 20A, VGE = 15V, TJ = 175°C
VGE(th) Gate Threshold Voltage 3.0 — 5.5 V VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -12 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)
gfe Forward Transconductance — 36 — S VCE = 50V, IC = 20A
ICES Collector-to-Emitter Leakage Current — 3.2 25 µA VGE = 0V, VCE = 600V
— 0.81 — mA VGE = 0V, VCE = 600V, TJ = 175°C
VFM Diode Forward Voltage Drop — 1.7 2.45 V IF = 20A
— 1.4 — IF = 20A, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)Parameter Min. Typ. Max. Units
Qg Total Gate Charge (turn-on) — 180 270 IC = 20A
Qge Gate-to-Emitter Charge (turn-on) — 28 42 nC VGE = 15V
Qgc Gate-to-Collector Charge (turn-on) — 64 96 VCC = 400V
Eon Turn-On Switching Loss — 298 389 IC = 20A, VCC = 400V, VGE = 15V
Eoff Turn-Off Switching Loss — 147 234 µJ RG = 4.7Ω, L = 485µH, TJ = 25°C
Etotal Total Switching Loss — 445 623 Energy losses include tail & diode reverse recovery
td(on) Turn-On delay time — 35 53 IC = 20A, VCC = 400V, VGE = 15V
tr Rise time — 12 29 ns RG = 4.7Ω, L = 485µH, TJ = 25°C
td(off) Turn-Off delay time — 142 163
tf Fall time — 15 32
Eon Turn-On Switching Loss — 630 — IC = 20A, VCC = 400V, VGE=15V
Eoff Turn-Off Switching Loss — 137 — µJ RG = 4.7Ω, L = 485µH, TJ = 175°C
Etotal Total Switching Loss — 767 — Energy losses include tail & diode reverse recovery
td(on) Turn-On delay time — 33 — IC = 20A, VCC = 400V, VGE = 15V
tr Rise time — 12 — ns RG = 4.7Ω, L = 485µH
td(off) Turn-Off delay time — 165 — TJ = 175°C
tf Fall time — 16 —
Cies Input Capacitance — 4673 — pF VGE = 0V
Coes Output Capacitance — 337 — VCC = 30V
Cres Reverse Transfer Capacitance — 58 — f = 1.0Mhz
Coes eff. Effective Output Capacitance (Time Related) — 406 — VGE = 0V, VCE = 0V to 480V
Coes eff. (ER) Effective Output Capacitance (Energy Related) — 162 —
TJ = 175°C, IC = 80A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp 600V
Rg = 4.7Ω, VGE = +20V to 0V
trr Diode Reverse Recovery Time — 41 — ns TJ = 25°C IF = 20A, VR = 200V,
— 70 — TJ = 125°C di/dt = 200A/µs
Qrr Diode Reverse Recovery Charge — 116 — nC TJ = 25°C IF = 20A, VR = 200V,
— 580 — TJ = 125°C di/dt = 200A/µs
Irr Peak Reverse Recovery Current — 4.8 — A TJ = 25°C IF = 20A, VR = 200V,
— 7.2 — TJ = 125°C di/dt = 200A/µs
Conditions
through are on page 13
" !
Fig. 2 - Maximum DC Collector Current vs.Case Temperature
Fig. 3 - Power Dissipation vs. CaseTemperature
25 50 75 100 125 150 175
TC (°C)
0
10
20
30
40
50
60
70
I C (
A)
25 50 75 100 125 150 175
TC (°C)
0
100
200
300
400
500
600
700
Pto
t (W
)
Fig. 5 - Reverse Bias SOATJ = 175°C; VGE =20V
10 100 1000
VCE (V)
1
10
100
1000
I C (
A)
#$%&'()%*&'+,-
#./$+0'1$≤ 20'13+3
1 10 100
f , Frequency ( kHz )
30
40
50
60
70
80
90
100
Load
Cur
rent
( A
)
For both:Duty cycle : 50%Tj = 175°CGate drive as specified
Tc = 110°C
Tc = 80°C
I
Square Wave:
VCC
Diode as specified
1 10 100 1000
VCE, Collector-to-Emitter Voltage (V)
0.01
0.1
1
10
100
1000
I C,
Col
lect
or-t
o -E
mitt
er C
urre
nt (
A)
Tc = 25°CTj = 175°CSingle Pulse
1msec
10msec
OPERATION IN THIS AREA LIMITED BY V CE(on)
100µsec
DC
4 !
Fig. 10 - Typical VCE vs. VGETJ = 25°C
Fig. 11 - Typical VCE vs. VGETJ = 175°C
Fig. 9 - Typ. Transfer CharacteristicsVCE = 50V; tp = 30µs
0 2 4 6 8 10
VGE, Gate-to-Emitter Voltage (V)
0
20
40
60
80
100
I C, C
olle
ctor
-to-
Em
itter
Cur
rent
(A
)
TJ = 25°C
TJ = 175°C
5 10 15 20
VGE (V)
0
2
4
6
8
10
VC
E (
V)
ICE = 10A
ICE = 20A
ICE = 40A
5 10 15 20
VGE (V)
0
2
4
6
8
10
VC
E (
V)
ICE = 10A
ICE = 20A
ICE = 40A
Fig. 8 - Typ. IGBT Output CharacteristicsTJ = 175°C; tp = 30µs
0 2 4 6 8 10
VCE (V)
0
20
40
60
80
100
I CE
(A
)
VGE = 18VVGE = 15VVGE = 12VVGE = 10VVGE = 9.0VVGE = 8.0VVGE = 7.0VVGE = 6.5VVGE = 6.0V
Fig. 7 - Typ. IGBT Output CharacteristicsTJ = 25°C; tp = 30µs
0 2 4 6 8 10
VCE (V)
0
20
40
60
80
100
I CE
(A
)
VGE = 18VVGE = 15VVGE = 12VVGE = 10VVGE = 9.0VVGE = 8.0VVGE = 7.0VVGE = 6.5VVGE = 6.0V
Fig. 6 - Typ. IGBT Output CharacteristicsTJ = -40°C; tp = 30µs
0 2 4 6 8 10
VCE (V)
0
20
40
60
80
100
I CE
(A
)VGE = 18VVGE = 15VVGE = 12VVGE = 10VVGE = 9.0VVGE = 8.0VVGE = 7.0VVGE = 6.5VVGE = 6.0V
!
Fig. 15 - Typ. Energy Loss vs. RGTJ = 175°C; L = 0.49mH; VCE = 400V, ICE = 20A; VGE = 15V
0 20 40 60 80 100 120
RG (Ω)
0
200
400
600
800
1000
1200
1400
1600
1800
Ene
rgy
(µJ)
EOFF
EON
Fig. 13 - Typ. Energy Loss vs. ICTJ = 175°C; L = 0.49mH; VCE = 400V, RG = 4.7Ω; VGE = 15V
Fig. 14 - Typ. Switching Time vs. ICTJ = 175°C; L = 0.49mH; VCE = 400V, RG = 4.7Ω; VGE = 15V
0 5 10 15 20 25 30 35 40
IC (A)
0
200
400
600
800
1000
1200
1400
1600
Ene
rgy
(µJ)
EOFF
EON
0 10 20 30 40 50
IC (A)
1
10
100
1000
Sw
ichi
ng T
ime
(ns)
tR
tdOFF
tF
tdON
Fig. 17- Typ. Output CapacitanceStored Energy vs. VCE
0 100 200 300 400 500 600 700
Voltage (V)
0
5
10
15
20
25
30
35
Eoe
s (µ
J)
Fig. 16 - Typ. Switching Time vs. RGTJ = 175°C; L = 0.49mH; VCE = 400V, ICE = 20A; VGE = 15V
0 20 40 60 80 100 120
RG (Ω)
10
100
1000
10000
Sw
ichi
ng T
ime
(ns)
tR
tdOFF
tF
tdON
Fig. 12 - Typ. Diode Forward Characteristics tp = 30µs
0.0 1.0 2.0 3.0
VF (V)
0
20
40
60
80
100
I F (
A)
TJ = 25°C
TJ =175°C
5 !
Fig. 18 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
0 100 200 300 400 500
VCE (V)
10
100
1000
10000
100000C
apac
itanc
e (p
F)
Cies
Coes
Cres
Fig. 19 - Typical Gate Charge vs. VGE ICE = 20A; L = 200µH
0 50 100 150 200
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VG
E, G
ate-
to-E
mitt
er V
olta
ge (
V)
VCES = 400V
Fig. 20 - Typ. Diode IRR vs. RGTJ = 175°C
0 10 20 30 40 50 60
RG (Ω)
20
25
30
35
40
45
50
I RR
(A
)
2 !
#$%(%'(6#$%((%(6
#$%'7(6 #$%6(6!
100 1000
diF/dt (A/µs)
0
20
40
60
80
100
120tr
r (n
s)VR = 200V
TJ = 25°C _____
TJ = 125°C ----------
IF = 40A
IF = 20A
IF = 10A
100 1000
diF/dt (A/µs)
0
5
10
15
20
25
30
I RR
M (
A)
IF = 40A
IF = 20A
IF = 10A
VR = 200V
TJ = 25°C _____
TJ = 125°C ----------
100 1000
diF/dt (A/µs)
0
200
400
600
800
1000
1200
1400
1600
Qrr
(nC
)
IF = 40A
IF = 20A
IF = 10A
VR = 200V
TJ = 25°C _____
TJ = 125°C ----------
100 1000
diF/dt (A/µs)
0
400
800
1200
1600
2000
di(r
ec)M
/ dt
(A
/µs)
IF = 40A
IF = 20A
IF = 10A
VR = 200V
TJ = 25°C _____
TJ = 125°C ----------
!
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1T
herm
al R
espo
nse
( Z
thJC
)
0.20
0.10
D = 0.50
0.020.01
0.05
SINGLE PULSE( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc
τJ
τJ
τ1
τ1τ2
τ2 τ3
τ3
R1
R1 R2
R2 R3
R3
Ci i/RiCi= τi/Ri
ττC
τ4
τ4
R4
R4 Ri (°C/W) τi (sec)0.00604 0.000009
0.05590 0.000119
0.10879 0.003033
0.07706 0.018527
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
The
rmal
Res
pons
e (
Z th
JC )
0.200.10
D = 0.50
0.020.01
0.05
SINGLE PULSE( THERMAL RESPONSE )
Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc
τJ
τJ
τ1
τ1τ2
τ2 τ3
τ3
R1
R1 R2
R2 R3
R3
Ci i/RiCi= τi/Ri
ττC
τ4
τ4
R4
R4 Ri (°C/W) τi (sec)0.04565 0.000043
0.60669 0.000490
0.65528 0.004983
0.38139 0.041994
8 !
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
0
1K
VCCDUT
L
L
Rg
80 V
DUT VCC
+-
Fig.C.T.5 - Resistive Load Circuit
Rg
VCCDUT
R = VCC
ICM
Fig.C.T.3 - S.C. SOA Circuit
DC
4X
DUT
VCC
SCSOA
Fig.C.T.4 - Switching Loss Circuit
L
Rg
VCCDUT /DRIVER
diode clamp /DUT
-5V
!
Fig. WF1 - Typ. Turn-off Loss Waveform@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform@ TJ = 175°C using Fig. CT.4
Fig. WF3 - Reverse Recovery Waveform andDefinitions
ta tb
trr
Qrr
IF
I RRM I RRM0.5
di(rec)M/dt
0.75 IRRM
5
4
3
2
0
1 di /dtf
! " ##
#
$ !# %%# %" ## & '##()(( *' "
-100
0
100
200
300
400
500
600
700
-0.2 -0.1 0 0.1 0.2 0.3
time(µs)
VC
E (V
)
-10
0
10
20
30
40
50
60
70
ICE
(A)
90% ICE
5% VCE10% ICE
Eoff
tf
-100
0
100
200
300
400
500
600
700
-0.2 -0.1 0 0.1 0.2 0.3
time (µs)
VC
E (V
)
-10
0
10
20
30
40
50
60
70
ICE
(A)
T ES T CUR R ENT
90% test current10% test
current
tr
Eon Loss
5% VCE
!
9:7:66676
&'
!!!!
;9
&7
'<+<==+==/+/(!&
!
9:7:66676
&'
"
!!!!
;9
&7
'<+<==+==/+/(!&
" !
>?@::66
>>A77(7
Notes: VCC = 80% (VCES), VGE = 20V, L = 485µH, RG = 4.7Ω, tested in production ILM ≤ 400A. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Rθ is measured at TJ of approximately 90°C. Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES. Coes eff.(ER) is a fixed
capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES. ! " # $ %&'"
Qualification Information†
Moisture Sensitivity Level TO-247AC N/A
TO-247AD N/A
RoHS Compliant Yes
ESD
Machine Model Class M4 (+/- 400V)††
AEC-Q101-002
Human Body Model Class H3B (+/- 8000V)††
AEC-Q101-001
Charged Device Model
Class C5 (+/- 1000V)††
AEC-Q101-005
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. IR’s Industrialand Consumer qualification level is granted by extension of the higher Automotivelevel.
4 !
B%7(!'*-(7!!!(!7(%%(;7C/BDE(%6)77/F@7
@%$7)%)E%%GE%7()!7%
%7'7$H!()777
%%!!!(%F
(%%((E%((%
7!!H%7%!!%F%%I%%H!I%%!%!!!7!!7!E!%7!%%!%F%H!(777777
.%%7%&7/7%*&/-B!7&/%)%%!I%77%%&/%#7!)7%7!%I%@%%77%)
7((7%.6$5848)77C/BDI%77!%%#7(!%)
!@$/':666#6
9(I(!G7!'8 4
$:*" -#2
!
Date Comments
9/8/2015 • Removed "short circuit rating on page 1 & 2.
Revision History