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Concurrent attenuation of, and energy harvesting from, surface vibrations: experimental verification and model validation This article has been downloaded from IOPscience. Please scroll down to see the full text article. 2012 Smart Mater. Struct. 21 035016 (http://iopscience.iop.org/0964-1726/21/3/035016) Download details: IP Address: 141.212.137.94 The article was downloaded on 17/10/2012 at 22:30 Please note that terms and conditions apply. View the table of contents for this issue, or go to the journal homepage for more Home Search Collections Journals About Contact us My IOPscience

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Page 1: Concurrent attenuation of, and energy harvesting …...Concurrent attenuation of, and energy harvesting from, surface vibrations: experimental verification and model validation This

Concurrent attenuation of, and energy harvesting from, surface vibrations: experimental

verification and model validation

This article has been downloaded from IOPscience. Please scroll down to see the full text article.

2012 Smart Mater. Struct. 21 035016

(http://iopscience.iop.org/0964-1726/21/3/035016)

Download details:

IP Address: 141.212.137.94

The article was downloaded on 17/10/2012 at 22:30

Please note that terms and conditions apply.

View the table of contents for this issue, or go to the journal homepage for more

Home Search Collections Journals About Contact us My IOPscience

Page 2: Concurrent attenuation of, and energy harvesting …...Concurrent attenuation of, and energy harvesting from, surface vibrations: experimental verification and model validation This

IOP PUBLISHING SMART MATERIALS AND STRUCTURES

Smart Mater. Struct. 21 (2012) 035016 (12pp) doi:10.1088/0964-1726/21/3/035016

Concurrent attenuation of, and energyharvesting from, surface vibrations:experimental verification and modelvalidationRyan L Harne

Department of Mechanical Engineering, Virginia Polytechnic Institute and State University,131 Durham Hall (MC 0238), Blacksburg, VA 24061, USA

E-mail: [email protected]

Received 24 October 2011, in final form 26 January 2012Published 16 February 2012Online at stacks.iop.org/SMS/21/035016

AbstractFundamental studies in vibrational energy harvesting consider the electromechanicallycoupled devices to be excited by uniform base vibration. Since many harvester devices aremass–spring systems, there is a clear opportunity to exploit the mechanical resonance in afashion identical to tuned mass dampers to simultaneously suppress the vibration of the hoststructure via reactive forces while converting the ‘absorbed’ vibration into electrical power.This paper presents a general analytical model for the coupled electro-elastic dynamics of avibrating panel to which distributed energy harvesting devices are attached. One such device isdescribed which employs a corrugated piezoelectric spring layer. The model is validated bycomparison to measured elastic and electric frequency response functions. Tests on an excitedpanel show that the device, contributing 1% additional mass to the structure, concurrentlyattenuates the lowest panel mode accelerance by >20 dB while generating 0.441 µW for apanel drive acceleration of 3.29 m s−2. Adjustment of the load resistance connected to thepiezoelectric spring layer verifies the analogy between the present harvester device and anelectromechanically stiffened and damped vibration absorber. The results show that maximumvibration suppression and energy harvesting objectives occur for nearly the same loadresistance in the harvester circuit.

(Some figures may appear in colour only in the online journal)

1. Introduction

Vibrational energy harvesting aims to convert ambientvibration into useful electric power by means of novelelectromechanical transducers. Mass–spring systems arefrequently employed whereby piezoelectric materials mayserve as the spring. Such reactive devices are a mainstayin passive vibration control applications since the oscillatorswork against a host structure or system at a tuned naturalfrequency.

A typical numerical model in energy harvesting analysisconsiders the harvester to be excited by the base vibration,neglecting the device’s influence on the host structure [1–3].

However, structural dynamic coupling is the foundationalassumption in vibration control modeling. The discrepancyexists since early energy harvesting studies consideredsources of vibration of massive inertial influence relativeto the harvester, for instance bridge vibrations [4, 5] orwireless sensor vibrations having MEMS harvesters [6].It was therefore reasonably assumed that applying suchharvesters to these systems would not influence the dynamicsof the host structure.

As material advances are made and practical applicationsof energy harvesting are demonstrated, there has arisen aninterest to convert almost any source of vibrational energyinto electrical power. However, some applications involve

10964-1726/12/035016+12$33.00 c© 2012 IOP Publishing Ltd Printed in the UK & the USA

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Smart Mater. Struct. 21 (2012) 035016 R L Harne

vibrating systems which are more likely to be dynamicallyinfluenced by applied harvester devices. Therefore, when theattached devices become more inertially substantial relative tothe host structure, a new analysis of the coupled electro-elasticdynamics must be considered.

In contrast to the present literature which has rigorouslyevaluated the electromechanical influences acting on theharvester itself [1, 7–9], this study is concerned with thegreater dynamic effects involved between the host excitingstructure and the applied harvesters. In this light, energyharvesting devices are analogous to electromechanicallystiffened and/or damped vibration absorbers. Thus, thedevices suppress the vibration of the exciting structure andconvert a portion of the ‘absorbed’ energy into electricalpower. In this capacity, the harvesters have substantiallygreater mechanical dynamic influence on the host structurethan in the prior energy harvesting literature in whichthe shunt damping effect was exploited simultaneouslywith harvesting capability [10]. This dual-purpose use ofthe energy harvesting vibration absorber has recently beeninvestigated in applications for tuned mass dampers ofhigh-rise buildings [11] and a separate scaled experimentalstudy suggested a real-world power output of the order of100 W with one electromagnetic harvester design [12].

Many of the present successful piezoelectric energyharvesting devices to date have been developed usingcantilevered beam designs [8, 13, 14]. The advantage of theseembodiments are the large strains induced along the beam as itoscillates in the first mode, which induce the greatest electricalpotentials across the piezoceramic electrodes. However, invibration control applications, cantilever beam vibrationabsorbers are frequently not employed since they inducebending moments upon the structures to which they areattached [15]. Most vibration control applications requiredevices to exert reactive forces as opposed to moments inorder to work against either the one-dimensional motion of asimple structure or the flexural motion of a vibrating surface.

This paper describes a study of one such devicedeveloped for this purpose. The device exhibits a transversesingle-degree-of-freedom (SDOF) resonance but is alsosuitable to attenuate the vibration of surfaces since it employscontinuously distributed mass and spring layers. In addition,the spring layer is constructed of a corrugated piezoelectricmaterial such that, as it deforms at the device resonance,it generates a significant electric potential which is thenconnected to an external energy harvesting circuit. The designof the passive device is similar to the manifestation achievedfor actuating purposes by Fuller and Cambou [16] using anetched and circularly corrugated piezoelectric spring layerearlier patented by Tibbetts [17].

A model based on the generalized Hamilton’s principle isbriefly presented which describes the coupled electro-elasticdynamics of a vibrating rectangular panel to which a numberof such distributed piezoelectric vibration control devicesare attached. The model is validated by comparison againstexperimental measurements of a piezoelectric device’s elasticand electrical dynamics on a shaker table. An experimentalset-up is then described in which a large, lightly damped and

Figure 1. Geometry and material properties of base plate structurewith attached piezoelectric vibration control devices.

simply supported panel is excited by random vibration. Asecond piezoelectric device is manufactured and applied tothis panel to consider its capability to simultaneously suppressthe panel vibration and generate electrical power when thepiezoelectric electrodes are attached to an external circuit.

The model is found to accurately predict the vibrationsuppression capability of the device as well as the electricalresponse around the device’s SDOF resonance. As observedin other energy harvesting studies [7, 9], changes of theload resistance in the harvester circuit affect the stiffeningand damping of the distributed piezoelectric spring layer,which thereafter affect its influence in reactively suppressingthe panel vibration. For the lightweight piezoelectric deviceapplied, it is found that the dual objectives are notcontradictory and appear to be best met when employingnearly the same load resistance in the harvester circuit.

2. Model description

2.1. Mechanical domain description

Consider a system composed of a base plate to which oneor more distributed piezoelectric vibration control devicesare attached, figure 1. The attached devices are eachcomposed of a distributed spring layer and a distributedtop plate. The spring layer itself is a continuous layerexhibiting piezoelectric characteristics. In the followinganalysis, subscripts b, s and t refer to the base plate,the continuous spring layer and the distributed top plate,respectively.

The origin of the global coordinate system is defined atthe base plate center point and the (x, y) plane correspondsto the base plate mid-plane, zb = 0. The base plate isarbitrarily bounded and may be excited by a number, Nf ,of localized point forces, fj(xj), where j = 1, 2, . . . ,Nf andxj = (xj, yj, 0).

The base plate and distributed top plate are assumed to beLove–Kirchhoff (LK) plates having displacements expressed

2

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Smart Mater. Struct. 21 (2012) 035016 R L Harne

Figure 2. Photograph of piezoelectric vibration control deviceusing a circularly corrugated piezoelectric film as the distributedspring layer. Electrical leads are also shown to be attached to theetched surface electrodes of the film.

in the form

u (x, t)i=b,t =

uio(x, y, t)− zi

∂wio(x, y, t)

∂xvio(x, y, t)− zi

∂wio(x, y, t)

∂ywio(x, y, t)

(1)

where the second subscript o indicates the displacement in themid-plane of the plate, zb = 0 or zt = 0.

The distributed spring layer is considered to be a thick,transversely deformable, orthotropic plate. Elastic propertiesof the layer, as described by the stiffness matrix cE

s evaluatedat constant electric field, are assumed to either be knownor are able to be computed approximately. The mechanicaldisplacements of the thick orthotropic plate allow for thetransverse compressibility of the layer:

u (x, t)s =uso(x, y, t)+ zsθx(x, y, t)

vso(x, y, t)+ zsθy(x, y, t)

wso(x, y, t)+ zs∂wso(x, y, t)

∂zs+

12

z2s∂2wso(x, y, t)

∂z2s

(2)

where θx and θy are the rotations about the middle planes inthe x and y axes, respectively. Application of the continuityof displacements and transverse stress between the springlayer and the two bounding plates allows the spring layermechanical displacements to be expressed in terms of the top

plate and bottom plate displacements:

u(x, t)s =

(12

[uto + ubo]+14

[ht∂wto

∂x− hb

∂wbo

∂x

]· · ·

+1hs

zs

{[uto − ubo]+

12

[ht∂wto

∂x+ hb

∂wbo

∂x

]})(

12

[vto + vbo]+14

[ht∂wto

∂y− hb

∂wbo

∂y

]· · ·

+1hs

zs

{[vto − vbo]+

12

[ht∂wto

∂y+ hb

∂wbo

∂y

]})(

12

[wto + wbo]+1hs

zs [wto − wbo])

(3)

2.2. Electrical domain description

Depending on the specific embodiment of the piezoelectricspring layer under study, one must appropriately select howto include electromechanical coupling effects in the analysis.The present inclusion of piezoelectric material in the springlayer is in the form of a circularly corrugated layer. Aphotograph of the full device is shown in figure 2 and adiagram of the cross-sectional geometry is given in figure 3(a).As the full vibration control device oscillates transversely atits SDOF natural frequency, bending strain is induced in thecorrugated piezoelectric material. However, on a given surfaceelectrode, these strains are out-of-phase from one half-periodof the corrugation to the next, figure 3(b). Thus, studiesby Gentry-Grace [18] showed that etching of the electrodeevery half-period allowed for maximum control authoritywhen the corrugated layer was used as an actuator. In fact,this transverse linear actuator design was patented earlier byTibbetts [17].

Therefore, the circularly corrugated piezoelectric springlayer electrodes are etched, as shown in figure 4(a), and thenwoven into the form shown in figure 4(b). Note that theportions of the electrodes which are etched correspond to theundeformed centerlines of the full spring layer, zs = 0. Thetwo resulting electrical biases are then combined out-of-phaseto yield the maximum voltage output.

Figure 3. (a) Undeformed cross-sectional geometry of circularly corrugated piezoelectric spring layer with exaggerated electrode thicknessand arbitrary top mass layer. (b) Illustrated cross-sectional response when top mass layer is displaced downward during SDOF resonantvibration. Bending strain is assumed to vary linearly through the thickness of the PVDF film.

3

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Figure 4. (a) Etching of piezoelectric material prior to corrugationand (b) the desired circularly corrugated form.

To model the electromechanical response of this formof piezoelectric spring layer, it is assumed that theelectromechanical effects are induced only by the transversedisplacement of the spring layer. Since the device isanticipated to exhibit a transverse SDOF resonance andenergy harvesting analyses have widely shown that resonantfrequencies are those which yield highest output electricalpower [1, 14, 19], this is the dynamic which is most pertinentto accurately model. Furthermore, it is here assumed that theelastic transverse response of the spring layer is decoupledfrom the in-plane response using a superposition approachto determine the equivalent elastic stiffness components ofthe circularly corrugated spring [20, 21]. As a result ofthese assumptions, the electromechanical response is simplya one-dimensional problem related to the transverse elasticdeformation of the spring layer.

3. Generalized Hamilton’s principle

For the sake of conciseness, rigorous derivation of Hamilton’sprinciple for deformable electro-elastic bodies is not herepresented due to the availability of useful texts [22, 23] anda similar summary [24] elsewhere. Only unique forms ofthe resulting equations are hereafter explained with specificmathematical operators provided in the appendix.

For the case of a single applied piezoelectric vibrationcontrol device, there exist six unknown mechanical displace-ments:

u (x, t)b = [ ubo vbo wbo]T

u (x, t)t = [ uto vto wto]T.

(4)

From equation (3), the mechanical displacements of thecontinuous spring layer are also expressed using theseunknowns. Due to the assumptions regarding the electricalcharacteristics of the piezoelectric material, only oneunknown is required to describe this response, vp.

The mechanical displacements are then approximated asa linear combination using the Rayleigh–Ritz method [23]:

u (x, t)i=b,t = (9(x)m(t))i (5)

where 9(x) are the admissible trial functions and m(t) arethe generalized coordinates. The coordinate dependence may

be truncated as per convention (x) = (x, y, 0)→ (x, y) sincethese displacements are defined using LK assumptions.

Substituting the approximate Ritz solutions into thegeneralized Hamilton’s principle and assuming: that onlythe base plate is excited by point forces, a harmonic timedependence of the form exp(jωt) and that the electrodes of thepiezoelectric material are attached only to an external resistiveload, R1, yields a coupled system of electromechanicalequations of the form

1R1

0 0

−2s,t Kt +Ks,t Ks,b

−2s,b Ks,t Kb +Ks,b

+ jω

Cp 2Ts,t 2T

s,b

0 Ct + Cs,t Cs,b

0 Cs,t Cb + Cs,b

− ω2

0 0 0

0 Mt +Ms,t Ms,b

0 Ms,t Mb +Ms,b

vp(ω)

mt(ω)

mb(ω)

=

0

0

F(ω)

(6)

where matrices K, C, M and 2 are the stiffness, damping,mass and electromechanical coupling terms, respectively; Cpis the capacitance of the piezoelectric film and matrices havingsubscript (s, i) with i = b, t indicate components ascribed tothe spring layer written in terms of the base plate, b, or the topplate, t, displacements. Those marked by ˜( ) indicate elasticcoupling terms due to the spring layer. All components ofequation (6) are detailed in the appendix for implementation.Note that electromechanical coupling is due to the springlayer; yet, because the spring layer mechanical displacementsare written in terms of the base and top plate responses, thecoupling is seen to directly affect the host structural vibrationas well as the response of the top mass layer of the vibrationcontrol and energy harvesting device.

In the present study, the electromechanical couplingterms are determined by

2s,t = Nc(hs)2hs

π ts

d31Esz

hs

∫ ∫9wto dy dx (7)

2s,b = Nc(hs)2hs

π ts

d31Esz

hs

∫ ∫−9wbo dy dx (8)

where9wto and9wbo are the trial functions of the top and baseplate transverse displacements, respectively. Equations (7)and (8) are the result of assuming the elastic transversedisplacements are decoupled from the in-plane responsesand the assumption that the piezoelectric spring layerelectromechanical coupling is only related to transversedisplacement. These equations have further been tailored toreflect a more intuitive representation of the linear transversestrain induced in the corrugated piezoelectric film. Though

4

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Table 1. Mechanical and electrical characteristics of the piezoelectric film.

ts (m) Ep (Pa) ρp (kg m−3) η d31 (m V−1) εT33 (F m−1)

28× 10−6 5.4× 109 1780 1× 10−3 23× 10−12 12ε0

the spring layer is deformed transversely, the piezoelectriccoefficient d31 related to bending is employed, as opposedto d33, which is related to through-thickness deformation.Secondly, a weighting term is applied, Nc

2hsπ ts

, which is theproduct of the number of corrugations, Nc, and the ratio ofthe equivalent continuous area of the spring layer to the actualcorrugated cross-sectional area. These modifications havebeen made following empirical observation of the devices’electrical response in the laboratory but in fact reflect anintuitive connection to the bending strain of the corrugatedspring as it is transversely deformed.

The frequency response function (FRF) of the topplate transverse acceleration to the base plate transverseacceleration is computed as

|FRFaccel(ω)| =

∣∣∣∣−ω2wto(x1, y1, ω)

−ω2wbo(x2, y2, ω)

∣∣∣∣=

∣∣∣∣ 9wto(x1, y1)mwto(ω)

9wbo(x2, y2)mwbo(ω)

∣∣∣∣ (9)

where mwto are the generalized coordinates related to thetop plate transverse displacement, mwbo are the generalizedcoordinates related to the base plate transverse displacement,and (x1, y1) and (x2, y2) are the points of evaluation. Thevoltage FRF (V g−1) of a device is computed as

|FRFvolt(ω)| =

∣∣∣∣ vp(ω)

−ω29wbo(x2, y2)mwbo(ω)

∣∣∣∣ (10)

where the peak voltage across the electrodes vp(ω) fromequation (6) is employed.

The accelerance is the transfer function between the panelacceleration and the input force. In experiments, the spatialaverage of the panel acceleration is computed as the squareroot of the ensemble average of the individual accelerationmeasurements squared. The accelerance is thereafter the ratioof this value to the driving force. In modeling, the acceleranceis integrated over the panel surface:

wbo(ω)

F(ω)=

1F(ω)

[ω4

2abbb

∫ ∫ (9wbo(x, y)mwbo(ω)

)∗×(9wbo(x, y)mwbo(ω)

)dx dy

]1/2. (11)

Average electrical power over the energy harvesting loadresistance is computed:

P(ω) =|vp(ω)|

2

2R1. (12)

When the device is placed on the host panel, similar to theaccelerance TF, the power TF is the ratio of the electricalpower to the input force.

Table 2. Equivalent orthotropic plate characteristics ofpiezoelectric core having λ = 12.7 mm.

Ex (Pa) Ey (Pa) Ex (Pa) νyx νyz νxz

2.47× 1010 2.12× 1010 5.78× 103 0.045 0 0

Gyz (Pa) Gxz (Pa) Gxy (Pa) ρs (kg m−3) hs (mm) ηs

7.49× 104 1.77× 106 2.69× 108 7.12 6.35 0.08

4. Model validation: shaker test

4.1. Device description and characterization

The device shown in figure 2 was produced using a piezo-electric film having characteristics as given in table 1 [25].Both surface electrodes were carefully etched as per thedesign of figure 4 using a fine-tipped watercolor brush andferric chloride solution. Afterwards, the film was constrainedusing thin lines of quick-drying epoxy and facing sheets ofnon-poled PVDF film into the circularly corrugated formhaving five full periods. Evident in figure 2 are the leadattachments connected to the etched surface electrodes,noting that four connections are required given the fourunique segments of the electrode after etching. Elastichomogenization techniques were used to determine equivalentorthotropic thick plate elasticity parameters to characterizethe spring layer stiffness matrix, cE

s [20, 26, 27]. Theseequivalent material properties are given in table 2. Note thatthe transverse parameter, Ez, is many orders of magnitudeless than the cross-planar bending stiffnesses, Ex and Ey, andthat there is no coupling between them, vyz = vxz = 0. Thisindicates that transverse dynamics of the layer are similar toa layer of vertical springs, as per [20], not coupled to theremaining dynamics of the layer.

The device was fixed to a stiff shaker table platformfor FRF testing. A diagram of the test is provided infigure 5. A Polytec OFV 501 laser vibrometer and OFV 2600controller measured the transverse velocity of the device topmass, whereafter acceleration was approximated by assumingharmonic time dependence: wto = jωwto. Table 3 presents thetop mass layer and approximate base plate characteristics.The shaker excited the table with white noise bandpassfiltered from 50 to 400 Hz and a table-mounted PCB 352A10accelerometer served as reference of the input excitation.The drive acceleration used during the test was 14.2 m s−2

(1.45 g). In the model, the base plate was assumed to havefree boundary conditions and be excited by a centrally locatedunit point force. For FRF computation, (x1, y1) = (0, 0) and(x2, y2) = (0, 0).

5

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Table 3. Mechanical and geometric properties of base and top plates, i = b, t.

Layer ai (mm) bi (mm) hi (mm) Ei (Pa) νi ρi (kg m−3) ηi

Base 300 140 5 1.0× 1014 0.33 800 3× 10−4

Mass layer 76.2 50.8 0.76 2.1× 1011 0.33 7850 1× 10−3

Figure 5. Experimental FRF test schematic used for modelvalidation.

4.2. FRF test results and model validation

A comparison of the measured and modeled acceleration FRFis given in figure 6(a) for four values of load resistance, R1.The device is observed to exhibit a principal SDOF resonance,akin to a 1D mass–spring–damper system. For smaller valuesof R1, the natural frequency occurs at approximately 78.5 Hz;as the resistance is increased, the coupling through thepiezoelectric material produces a stiffer distributed springlayer and increases the resonance to the open circuitvalue (i.e. R1 → ∞) at approximately 81.5 Hz. This is asubstantial shift in frequency for a piezoelectric materialhaving such low electromechanical coupling as compared

with, for example, piezoceramics. However, this may be dueto the circularly corrugated design which induces relativelyhigh bending strain in the film as the mass oscillates verticallyat resonance. The model almost exactly predicts the locationsof these resonant frequencies for various load resistancesbut measurements exhibited uniformly more roll-off aboveresonance. This lapse in the model may be explained byemploying too great of a loss factor, ηs, in table 2, for theequivalent spring layer elastic material properties.

It is also noted that there is no noticeable shunt dampingeffect due to dissipation in the electrical circuit. The inertialinfluence of the top mass layer dominates dissipative circuiteffects. Therefore, for this particular specimen the dampingof the device is mostly a function of the elastic characteristicsof the PVDF film itself as opposed to electromechanicalcoupling.

Figure 6(b) compares the measured and predicted voltageFRF for the sample. The model fairly accurately predicts theamplitude and shifting resonance frequency of the voltageFRF resonance. Similar to past work in piezoelectric energyharvesting [14], the voltage FRF is measured and predictedto both increase in overall amplitude as well as in frequencyas the load resistance of the energy harvesting circuit isincreased.

Finally, a time-domain plot of the response of the deviceas measured for R1 = 150 k� is given in figure 7 at anexcitation frequency of 81 Hz and drive acceleration also of14.2 m s−2 (1.45 g). Shown in figure 7(a) are the individualvoltage outputs for the two electrode pairs generated byetching according to the design in figure 4. The outputs areperfectly out-of-phase and of nearly identical magnitude. Thisverifies the assumption that the strains exhibited on opposingsides of the piezoelectric film are equal and opposite. Proper

Figure 6. Comparison of modeled and measured (a) acceleration FRF magnitudes and (b) voltage FRF magnitudes for piezoelectriccorrugated core distributed absorber device for various load resistances, R1.

6

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Figure 7. Measured time series of corrugated piezoelectric device. (a) Individual electrode outputs and (b) sum and difference of the twosignals.

Table 4. Mechanical and geometric properties of base and top plates, i = b, t.

Layer ai (mm) bi (mm) hi (mm) Ei (Pa) νi ρi (kg m−3) ηi

Base 711 508 6.35 7.2× 1010 0.33 2100 1× 10−3

Mass layer 150 150 1.3 7.2× 1010 0.33 2100 1× 10−3

combination of these voltages yields a substantial increasein output, while directly combining the two signals almosteliminates the net voltage, figure 7(b).

The response is also observed to be sinusoidal, indicatingthe linearity of the distributed spring layer as the devicetransversely oscillates. This is a beneficial finding given thatone might assume the bending strain induced in the corrugatedspring is substantial for the present amplitude of excitingacceleration of 14.2 m s−2 (1.45 g). However, in practice, littledisplacement from the undeformed configuration is observedas the device oscillates on the shaker. This may be explainedby the fact that the transverse force of the mass deflectingthe corrugated spring is distributed over a broader surfaceas compared to a point vibration absorber which generallydeflects its spring to a much greater degree.

While no sensitivity analysis is here performed todetermine at what level of input vibration the induced bendingstrain in the corrugated spring begins to exhibit nonlinearcharacteristics, the amplitude of vibration presently measuredin shaker testing is sufficiently great to assume most realisticscenarios would also exhibit linear elastic and electricalresponse (a number of realistic ambient vibration accelerationlevels are detailed in [28–30] and often have a magnitude lessthan 1 g). The linearity of the transverse response suggestsmodel results for the device at its natural frequency shouldbe in reasonable agreement with measurements which is mostimportant for energy harvesting analyses.

5. Panel experiment description

A simply supported panel was then used for testing anotherpiezoelectric vibration control device. The panel itself was apart of a larger mounted structure with the panel extending

off of the structure by means of thin shims to replicate simplesupports as closely as possible. The mechanical and geometricinformation of the panel and the device top mass layer areprovided in table 4. It was observed that the edges of thepanel support were not exactly classical simple supports butadditionally constrained the rotation of the edges. This wascompensated for in the modeling by including additional edgestiffnesses in computation. This is achieved by assuming theedge is further constrained by rotational springs as describedin [31] and [32]. However, due to the inexact boundaries alongthe edges of the test panel, it was not possible to perfectlymatch eigenfrequency predictions of the panel with thosemeasured.

The mounted structure and the panel were both suspendedas shown in figure 8 with a test schematic shown in figure 9.An electrodynamic shaker was attached to a bored hole at thecenter of the panel through a short stinger. The shaker inputwas bandpass-filtered white noise from 50 to 800 Hz. A PCB208 A03 force transducer was positioned between the stingerand the panel. An array of 30 PCB 330A accelerometers wererandomly positioned on the underside of the panel, with thetop surface left clear for later application of the piezoelectricdevice. The global accelerance TF was computed as the squareroot of the ensemble average of the squared accelerance TFsbetween each accelerometer and the force transducer.

The piezoelectric spring layer design was the same as forthe earlier sample, having piezoelectric film characteristics asgiven in table 1 and equivalent elastic parameters as providedin table 2. A close-up photograph of the device attached to thepanel is shown in figure 10. The device was much larger thanthe specimen used in FRF testing of section 4 and included12 periods of the circular corrugation. However, despite thelarger size, the mass ratio of the device relative to the mass of

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Figure 8. Photograph of simply supported panel in mountedstructure with piezoelectric device attached to the top surface. Theshaker, stinger, force transducer and accelerometer array areconnected to the underside of the panel from the photographperspective.

Figure 9. Panel test set-up schematic: (a) panel;(b) bandpass-filtered white noise; (c) shaker; (d) force transducer;(e) accelerometer array distributed over the full bottom surface ofpanel; (f) piezoelectric device attached to top panel surface;(g) external load resistance; (h) voltage across resistor; (j) dataacquisition and processing system.

the panel was only µ = 0.0104, or just over 1%. In practicalterms, this is an unusually lightweight device to employ forvibration control purposes but also meets the general objectivein energy harvesting of attaching devices of negligible inertialinfluence to the host structure. Though the device was notmeasured on the shaker platform, for the justified reasonthat removing such devices from the platform often resultedin the destruction of the piezoelectric film layer, the SDOFnatural frequency of the device was predicted by the modelto be approximately 94 Hz. This was very close to the (1, 1)mode of the simply supported panel which was measured andcomputed to be 97.5 Hz.

6. Panel experimental results and model comparison

The panel accelerance TF was initially measured with nothingattached to the top surface. Afterwards, the center of thepiezoelectric device was attached at (93, 0) mm relativeto the panel center. The device was attached by means of

Figure 10. Photograph of the piezoelectric vibration control deviceattached to the panel.

a thin double-sided tape. The tests were repeated varyingthe load resistance, R1, in the energy harvesting circuit towhich the electrical leads from the etched electrodes wereattached. The out-of-phase voltages from the electrodes wereappropriately combined so as to yield the maximum electricalsignal. The untreated panel accelerance TF and that withthe applied piezoelectric device are shown in figure 11comparing predicted results and measurements when theexternal resistance was R1 = 180 k�.

The model very closely predicts the untreated panelresponse with the exception of the location of someresonances. This is attributed to the inexact simply supportedboundary conditions of the panel. It is apparent that theconnection of the shaker to the panel is not exactly at the panelcenter since several of the asymmetric modes are excited,for instance the (2, 1) mode at 186 Hz. After observationof this feature, the model was appropriately adjusted tosimulate the point force excitation at (4, 4) mm relativeto the panel center. The two lowest-order symmetric panelresonances—the (1, 1) mode at 97.5 Hz and the (3, 1) modeat 350 Hz—are thoroughly excited by the shaker and theseare the resonances for which the piezoelectric device wasdesigned and appropriately positioned. This is illustrated infigure 12 showing the device placed near to the anti-nodes ofthe (1, 1) and (3, 1) modes. The ideal position for attenuatingthese modes was to place the device at the panel center butthis was not achievable due to interference from the shakerconnection.

Following application of the device, the panel vibrationof the (1, 1) mode is observed to be significantly attenuated.The resonance at 97.5 Hz is predicted to be suppressed byapproximately 20 dB and the measurements show a similaramplitude of attenuation. Two split resonances at 87 and100 Hz are generated by application of the reactive device.This is a dynamic ascribed to conventional 1D vibrationabsorbers [33] and is seen to also be the case for the distributedsystem of interest. This further exemplifies the reactive natureof the piezoelectric device in suppressing the panel response.The (3, 1) panel resonance at 350 Hz is attenuated by morethan 10 dB but this is not due to the direct ‘tuning’ of thedevice for this frequency. Instead, the reactive suppression ofthe symmetric (3, 1) mode is conveniently achieved by themostly central placement of the device on the panel surface.Over the bandwidth of frequencies computed, the model is invery close agreement with the measurements, despite minormisalignment of panel resonances due to the inexact simplesupports.

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Figure 11. Comparison of modeled (solid curves) and measured (dashed curves) accelerance TF magnitudes of the panel when untreated(black plots) and with the piezoelectric device (red plots). R1 = 180 k�.

Figure 12. Illustration of positioning of device on panel to attenuate (a) (1, 1) mode and (b) (3, 1) mode. Spring layer shown as acontinuum, as in figure 1, with exaggerated deformation of panel and device spring layer for ease of visualization.

Figure 13. Comparison of modeled and measured electrical power TF magnitude of the piezoelectric device. R1 = 180 k�.

While the device is observed to dramatically suppressthe panel vibration for being such a lightweight treatment,the second objective pursued is the achievement of usefulelectrical power output from the device. For a loadresistance of R1 = 180 k�, the power TF magnitude isshown in figure 13. For the two symmetric modes in thisbandwidth—(1, 1) at 97.5 Hz and (3, 1) at 350 Hz—themeasurements show very clear maxima in the electricalpower response. While the model is close in replicating themagnitude of the power around the device SDOF naturalfrequency, 94 Hz, it slightly under-estimates the peak responsewhich it predicts to occur at 100 Hz, the higher of the two splitresonances.

Measurements at 86.5 Hz observed a maximum powerTF magnitude of 3.3 mW N−2. The power TF is noteasily compatible with other metrics in the energy harvestingliterature, more often quoted as power FRFs with units W g−2

or simply as power at a given exciting acceleration level. Thus,the panel was instead excited only at 86.5 Hz. The measuredaverage electrical power was then 0.441 µW (peak voltageof 0.3986 V) while the drive acceleration at the panel center(shaker attachment) was measured to be 3.29 m s−2 (0.335 g).This low amplitude of measured power also suggests the filmis strained within a linear range given another study in theliterature which employed piezoelectric film and achievedpower levels of the order of mW [34].

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Figure 14. (a) Panel accelerance TF around (1, 1) mode and (b) piezoelectric device power TF for a variety of resistances R1.

Figure 13(b) also shows that electrical response for thedevice when excited by panel asymmetric modes yieldedstray electrical signals, and thus the noisy response observedbetween 120 and 320 Hz. The model does not take intoaccount the precise geometry of the circularly corrugatedspring layer and, instead, predicts a precipitous electricalsignal drop in this bandwidth, greater than seven orders ofmagnitude. Since it is not feasible to measure such a rangein electrical response, the measured noisy electrical output isunderstandable.

Figure 14(a) plots the measured panel response aroundthe (1, 1) mode for a variety of load resistances, R1. Changingthe load resistance is here observed to influence the magnitudeof the vibration suppression around the (1, 1) mode. Thissuggests that the larger piezoelectric vibration control device,in contrast to the much smaller sample used in FRF testing,exhibits enough electromechanical coupling through the manypiezoelectric corrugations to take advantage of shunt dampingeffects in the energy harvesting circuit.

What is perhaps more interesting, however, is the effecton the panel response measured for the higher of the twosplit resonances, at 100 Hz. For low R1, this resonance occursat 99 Hz. Increasing load resistance dampens this resonanceand increases the frequency to 100 Hz. Further increasingR1 reduces the damping effect and increases the resonanceup to 101 Hz. A load resistance of R1 = 82 k� yields anadditional 2 dB of vibration attenuation of the 100 Hz splitresonance as compared with open circuit conditions, R1 =

→∞. This emulates the piezoelectric shunt damping effectscharacteristic of other more frequently studied systems likecantilevered piezoelectric beams [9]. This also further verifiesthe analogy between the present energy harvesting deviceand an electromechanically stiffened and damped vibrationabsorber.

Figure 14(b) plots the measured device power TF forthe same selections of load resistance. The maximum powerTF achieved from these resistances occurs for R1 = 180 k�:3.3 mW N−2 at 86.5 Hz. Smaller or greater load resistancesyield reduced maximum output. It is also noted that bothobjectives are best met by nearly the same choice of R1:vibration suppression of the panel is best achieved using R1 =

Figure 15. Comparison of modeled and measured electrical powerTF magnitude of the piezoelectric device at 86.5 Hz for various R1.

82 k� while energy harvesting objectives maximize powerfor R1 ≈ 180 k�. For low to moderately electromechanicallycoupled piezoelectric harvesters, this has elsewhere beenobserved in the literature with regards to damping of theharvester itself [7, 14, 19].

Figure 15 plots the power TF magnitude at 86.5 Hz forvarious load resistances. Modeled results are uniformly lessthan those measured. As observed in figure 12, this disparityis explained by the fact that the model predicts the maximato occur at 100 Hz instead of 86.5 Hz. However, the trendbetween the two plots is similar and shows a clear optimumrange of load resistance for maximizing electrical poweroutput. As previously observed, this range also correspondsroughly to the same selection of R1 that best suppresses panelvibration.

Compared to the power TF which appears promisinggiven the order of mW, the actually observed maximumaverage power (0.441 µW for panel center drive accelerationof 3.29 m s−2) falls well within or below the range of manyother piezoelectric energy harvesters in the literature [30,35]. This indicates there is a need for an improved metricof achievable power in the event the host structure may bedynamically influenced by the attached harvesting device.The power TF has already been employed elsewhere in

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the literature in a non-dimensional form when the mainstructure and attached harvester are both lumped parametersystems [11]. This is a more suitable use for the power TFgiven the direct relation between applied force, the systemmass and the resulting acceleration. In contrast, distributedsystems like the present plate are characterized by governingequations of greater complexity, which suggests an improvedmetric of generated power due to an applied force orsystem acceleration should be proposed. At present, a moredirect metric—measured average power when the panel isdriven at a single frequency—appears sufficient for immediatecomparison against other harvester designs.

7. Conclusions

This paper presented a model based on the generalizedHamilton’s principle to approximate the coupled electro-elastic response of a host structure and attached distributedpiezoelectric vibration control devices. The purpose of themodel is to estimate the benefit of such devices in achievingtwo objectives: (i) vibration suppression of the panel viareactive and resistive dynamics and (ii) energy harvestingthrough deformation of the piezoelectric spring layer andcoupling to an external circuit. While the electromechanicalinfluences on energy harvesters themselves have been widelystudied and reported, this analysis focuses on the influence ofthe harvester on the exciting host structure. In this perspective,the harvesters are analogous to electromechanically stiffenedand damped vibration absorbers.

One such device design was considered in detail. Thesedevices used a distributed spring layer constructed froma circularly corrugated piezoelectric film having electrodesappropriately etched to maximize the voltage output. Onesample was attached to a shaker table to measure accelerationand voltage FRFs which were compared against modelpredictions. The model was found to be in close agreementregarding the location of the SDOF natural frequency ofthe device and also accurately replicated the effects ofelectromechanical coupling through the piezoelectric springlayer as the external load resistance was modified.

A larger piezoelectric device was then manufactured andapplied to a lightly damped structural panel which was excitedby random vibration. The added device represented roughly a1% addition of mass to the host structure and was designedso as to reactively suppress the (1, 1) mode of the panel.The addition of the device was seen to significantly suppressthis resonance, akin to classical vibration absorbers, and theelectromechanical coupling effects due to shunt dampingwere observed to further suppress the panel vibration bychanging the stiffness and damping characteristics of thespring layer as the electrical load resistance was modified. Theelectrical power TF was maximized when the load resistancewas slightly greater than that corresponding to the choicewhich most suppressed the panel vibration. This indicatesboth objectives may be nearly achieved simultaneously for thepiezoelectric vibration control device considered.

Acknowledgments

The author is grateful for the continued encouragement ofKevin Smith of Newport News Shipbuilding. The authorwould also like to thank the reviewers for valuable comments.

Appendix. Components of equation (6)

K =∑

i=b,s,t

∫Vi

(Lu9(x))Ti cEi (Lu9(x))i dVi (A.1)

M =∑

i=b,s,t

ρi

∫Vi

(9T(x))i (9(x))i dVi (A.2)

C = αM+ βK. (A.3)

Here, α = 0 and β = η/ω to employ loss factor damping:

F = [9T(xf1) · · ·9T(xfNf

)]. (A.4)

The linear differential operator for the Love–Kirchhoffplates is

(Lu)i=b,t =

∂x0 0

0∂

∂y0

∂y

∂x0

. (A.5)

The linear differential operator for the thick orthotropic plateis

(Lu)s =

∂x0 0

0∂

∂y0

0 0∂

∂zs

0∂

∂zs

∂y∂

∂zs0

∂x∂

∂y

∂x0

. (A.6)

The stiffness matrices of the Love–Kirchhoff plates are

cEi=b,t =

Ei

1− ν2i

νiEi

1− ν2i

0

νiEi

1− ν2i

Ei

1− ν2i

0

0 0Ei

2(1+ νi)

. (A.7)

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Smart Mater. Struct. 21 (2012) 035016 R L Harne

For the thick orthotropic plate the stiffness matrix is expressedas

cEs =

1Ex−νyx

Ey−νzx

Ez0 0 0

−νxy

Ex

1Ey−νzy

Ez0 0 0

−νxz

Ex−νyz

Ey

1Ez

0 0 0

0 0 01

Gyz0 0

0 0 0 01

Gxz0

0 0 0 0 01

Gxy

−1

. (A.8)

The capacitance of the piezoelectric layer, Cp =

[Ap(εT33 − d2

31Ep)]/ts, is a function of: Ap, the area of theelectrodes; εT

33, the permittivity matrix component evaluatedat constant stress; d31, the piezoelectric constant; Ep, theYoung’s modulus of the piezoelectric material; and ts, thethickness of the piezoelectric material.

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