comparison standard and graded substrate, simulation with ise-tcad
DESCRIPTION
Comparison standard and graded substrate, simulation with ISE-TCAD. Andrei Dorokhov, May 14 , 2007. Doping profiles and the geometry. Standard (uniformly doped) substrate. Doping profiles and the geometry. Graded (linearly doped) substrate. - PowerPoint PPT PresentationTRANSCRIPT
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Comparison standard and graded substrate,
simulation with ISE-TCAD
Andrei Dorokhov,May 14 , 2007
![Page 4: Comparison standard and graded substrate, simulation with ISE-TCAD](https://reader036.vdocuments.us/reader036/viewer/2022062309/568148f0550346895db60f24/html5/thumbnails/4.jpg)
Particle energy loss distribution and one pixel geometry
Pwell
Nwell
Nepi
Pepi
Electron, 2keV
SiO2, 1nm
Backplane
Backplane One pixel layout
TOX
Energy deposition
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Electrons collection
Electrons density (saturated color scale, in the n-well the actual density much larger)
Standard and Graded
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Resultscce %,standard
cce %, graded
90% collection time ns, standard
90% collection time ns, graded
hit pixel 5.8 26 143 16
cluster 2x2 13 32 192 20
cluster 3x3 24 40 206 22
cluster 5x5 49 41 227 23
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Conclusions
1.Charge collection in the graded substrate much faster (~10 times), and in the order of 16-23 ns
2.In the graded substrate the charge collection in 5x5 cluster smaller by 20% but in the seed pixel ~5 times larger -> much smaller spread