chipled® with high power infrared emitter (850 nm) version 1.4 … · 60˚ 50˚ 40˚ 30˚ 20˚...
TRANSCRIPT
![Page 1: CHIPLED® with High Power Infrared Emitter (850 nm) Version 1.4 … · 60˚ 50˚ 40˚ 30˚ 20˚ 10˚ 0 ... XXX °C X Pack: RXX DEMY XXX X_X123_1234.1234 X (Q)QTY: 9999 Semiconductors](https://reader034.vdocuments.us/reader034/viewer/2022042100/5e7c588f436119591b5978b6/html5/thumbnails/1.jpg)
2016-07-22 1
2016-07-22
CHIPLED® with High Power Infrared Emitter (850 nm)
Version 1.4
SFH 4053
Ordering Information
Features:
• Very small package: (LxWxH) 1.0 mm x 0.5 mm x 0.45 mm
Applications
• Miniature photointerrupters
• Proximity sensor
• Mobile devices
• Touchscreen
Notes
Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which
can be hazardous to the human eye. Products which incorporate these devices have to follow the safety
precautions given in IEC 60825-1 and IEC 62471.
Type: Radiant Intensity Ordering Code
Ie [mW/sr]
IF= 70 mA, tp=20 ms
SFH 4053 7 (≥ 4) Q65111A0651
Note: Measured at a solid angle of Ω = 0.01 sr
![Page 2: CHIPLED® with High Power Infrared Emitter (850 nm) Version 1.4 … · 60˚ 50˚ 40˚ 30˚ 20˚ 10˚ 0 ... XXX °C X Pack: RXX DEMY XXX X_X123_1234.1234 X (Q)QTY: 9999 Semiconductors](https://reader034.vdocuments.us/reader034/viewer/2022042100/5e7c588f436119591b5978b6/html5/thumbnails/2.jpg)
2016-07-22 2
Version 1.4 SFH 4053
Maximum Ratings (TA = 25 °C)
Characteristics (TA = 25 °C)
Parameter Symbol Values Unit
Operation and storage temperature range Top; Tstg -40 ... 85 °C
Reverse voltage VR 5 V
Forward current IF 70 mA
Surge current
(tp ≤ 400 µs, D = 0)
IFSM 0.7 A
Power consumption Ptot 140 mW
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
VESD 2 kV
Thermal resistance junction - ambient 1) page 12 RthJA 450 K / W
Thermal resistance junction - soldering point 2) page 12
RthJS 350 K / W
Parameter Symbol Values Unit
Peak wavelength
(IF = 70 mA, tp = 20 ms)
(typ) λpeak 860 nm
Centroid wavelength
(IF = 70 mA, tp = 20 ms)
(typ) λcentroid 850 nm
Spectral bandwidth at 50% of Imax
(IF = 70 mA, tp = 20 ms)
(typ) ∆λ 30 nm
Half angle (typ) ϕ ± 70 °
Dimensions of active chip area (typ) L x W 0.2 x 0.2 mm x
mm
Rise and fall time of Ie ( 10% and 90% of Ie max)
(IF = 70 mA, RL = 50 Ω)
(typ) tr, tf 12 ns
Forward voltage
(IF = 70 mA, tp = 20 ms)
(typ (max)) VF 1.6 (≤ 2) V
Forward voltage
(IF = 500 mA, tp = 100 µs)
(typ (max)) VF 2.4 V
Reverse current
(VR = 5 V)
IR not designed for
reverse operation
µA
Total radiant flux
(IF= 70 mA, tp=20 ms)
(typ) Φe 35 mW
![Page 3: CHIPLED® with High Power Infrared Emitter (850 nm) Version 1.4 … · 60˚ 50˚ 40˚ 30˚ 20˚ 10˚ 0 ... XXX °C X Pack: RXX DEMY XXX X_X123_1234.1234 X (Q)QTY: 9999 Semiconductors](https://reader034.vdocuments.us/reader034/viewer/2022042100/5e7c588f436119591b5978b6/html5/thumbnails/3.jpg)
Version 1.4 SFH 4053
2016-07-22 3
Grouping (TA = 25 °C)
Temperature coefficient of Ie or Φe
(IF = 70 mA, tp = 20 ms)
(typ) TCI -0.5 % / K
Temperature coefficient of VF
(IF = 70 mA, tp = 20 ms)
(typ) TCV -0.7 mV / K
Temperature coefficient of wavelength
(IF = 70 mA, tp = 20 ms)
(typ) TCλ 0.3 nm / K
Group Min Radiant Intensity Max Radiant Intensity Typ Radiant Intensity
IF= 70 mA, tp=20 ms IF= 70 mA, tp=20 ms IF = 500 mA, tp = 25 µs
Ie, min [mW / sr] Ie, max [mW / sr] Ie, typ [mW / sr]
SFH 4053-P 4 8 35
SFH 4053-Q 6.3 12.5 55
Note: measured at a solid angle of Ω = 0.01 sr
Only one group in one packing unit (variation lower 2:1).
Relative Spectral Emission 3) page 12
Irel = f(λ), TA = 25°CRadiant Intensity 3) page 12
Ie / Ie(100 mA) = f(IF), single pulse, tp = 25 µs, TA= 25°C
Parameter Symbol Values Unit
7000
nm
%
OHF04132
20
40
60
80
100
950750 800 850
Irel
λ
OHF04406
IF
mA10 5 10 5 10 10 3
110
-210
-310
5
10
10
5
-1
5
0
e (70 mA)IeI
0 1 2
![Page 4: CHIPLED® with High Power Infrared Emitter (850 nm) Version 1.4 … · 60˚ 50˚ 40˚ 30˚ 20˚ 10˚ 0 ... XXX °C X Pack: RXX DEMY XXX X_X123_1234.1234 X (Q)QTY: 9999 Semiconductors](https://reader034.vdocuments.us/reader034/viewer/2022042100/5e7c588f436119591b5978b6/html5/thumbnails/4.jpg)
2016-07-22 4
Version 1.4 SFH 4053
Max. Permissible Forward Current
IF, max = f(TA), RthJA = 450 K/WForward Current 3) page 12
IF = f(VF), single pulse, tp = 100 µs, TA= 25°C
Permissible Pulse Handling Capability
IF = f(tp), TA = 25 °C, duty cycle D = parameter
00
˚CTA
FImA
OHF05343
20 40 60 80 100
10
20
30
40
50
60
70
80OHF03826
FI
10-4
0.5 1 1.5 2 2.5 V 3
100
A
0
FV
-110
5
5
10-2
-3
5
10
10100
-2-3-4-5 1010 10
FIA
Pt=D T
210-1 10tp
10 s 10
OHF05344
T
tP
IF
0.05
0.20.1
0.020.01
D0.005
=
0.51
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
![Page 5: CHIPLED® with High Power Infrared Emitter (850 nm) Version 1.4 … · 60˚ 50˚ 40˚ 30˚ 20˚ 10˚ 0 ... XXX °C X Pack: RXX DEMY XXX X_X123_1234.1234 X (Q)QTY: 9999 Semiconductors](https://reader034.vdocuments.us/reader034/viewer/2022042100/5e7c588f436119591b5978b6/html5/thumbnails/5.jpg)
Version 1.4 SFH 4053
2016-07-22 5
Radiation Characteristics 3) page 12
Irel = f(ϕ), TA= 25°C
Package Outline
Dimensions in mm.
OHF05523
0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚0.40.60.81.0100˚
90˚
80˚
70˚
60˚
50˚
0˚10˚20˚30˚40˚
0
0.2
0.4
0.6
0.8
1.0ϕ
short axislong axis
![Page 6: CHIPLED® with High Power Infrared Emitter (850 nm) Version 1.4 … · 60˚ 50˚ 40˚ 30˚ 20˚ 10˚ 0 ... XXX °C X Pack: RXX DEMY XXX X_X123_1234.1234 X (Q)QTY: 9999 Semiconductors](https://reader034.vdocuments.us/reader034/viewer/2022042100/5e7c588f436119591b5978b6/html5/thumbnails/6.jpg)
2016-07-22 6
Version 1.4 SFH 4053
Pinning
Pin Description
1 anode
2 cathode
Package
Chipled (EIA 0805)
Approximate Weight:
0.56 mg
Note:
Colour: colourless
Recommended Solder Pad
Dimensions in mm (inch).
![Page 7: CHIPLED® with High Power Infrared Emitter (850 nm) Version 1.4 … · 60˚ 50˚ 40˚ 30˚ 20˚ 10˚ 0 ... XXX °C X Pack: RXX DEMY XXX X_X123_1234.1234 X (Q)QTY: 9999 Semiconductors](https://reader034.vdocuments.us/reader034/viewer/2022042100/5e7c588f436119591b5978b6/html5/thumbnails/7.jpg)
Version 1.4 SFH 4053
2016-07-22 7
Reflow Soldering Profile
Product complies to MSL Level 3 acc. to JEDEC J-STD-020D.01
00
s
OHA04525
50
100
150
200
250
300
50 100 150 200 250 300
t
T
˚C
St
t
Pt
Tp240 ˚C
217 ˚C
245 ˚C
25 ˚C
L
OHA04612
Profile Feature
Profil-Charakteristik
Ramp-up rate to preheat*)
25 °C to 150 °C2 3 K/s
Time tS TSmin to TSmax
tS
tL
tP
TL
TP
100 12060
10 20 30
80 100
217
2 3
245 260
3 6
Time25 °C to TP
Time within 5 °C of the specified peaktemperature TP - 5 K
Ramp-down rate*TP to 100 °C
All temperatures refer to the center of the package, measured on the top of the component
* slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range
Ramp-up rate to peak*)
TSmax to TP
Liquidus temperature
Peak temperature
Time above liquidus temperature
Symbol
Symbol
Unit
Einheit
Pb-Free (SnAgCu) Assembly
Minimum MaximumRecommendation
K/s
K/s
s
s
s
s
°C
°C
480
![Page 8: CHIPLED® with High Power Infrared Emitter (850 nm) Version 1.4 … · 60˚ 50˚ 40˚ 30˚ 20˚ 10˚ 0 ... XXX °C X Pack: RXX DEMY XXX X_X123_1234.1234 X (Q)QTY: 9999 Semiconductors](https://reader034.vdocuments.us/reader034/viewer/2022042100/5e7c588f436119591b5978b6/html5/thumbnails/8.jpg)
2016-07-22 8
Version 1.4 SFH 4053
Taping
Dimensions in mm [inch].
Tape and Reel
8 mm tape with 3000 pcs. on ∅ 180 mm reel
D0
2P
P0
1P
WFE
Direction of unreeling
N
W1
2W
A
OHAY0324
Label
Leader:Trailer:
13.0
Direction of unreeling
±0.2
5
min. 160 mm *
min. 400 mm *
*) Dimensions acc. to IEC 60286-3; EIA 481-D
![Page 9: CHIPLED® with High Power Infrared Emitter (850 nm) Version 1.4 … · 60˚ 50˚ 40˚ 30˚ 20˚ 10˚ 0 ... XXX °C X Pack: RXX DEMY XXX X_X123_1234.1234 X (Q)QTY: 9999 Semiconductors](https://reader034.vdocuments.us/reader034/viewer/2022042100/5e7c588f436119591b5978b6/html5/thumbnails/9.jpg)
Version 1.4 SFH 4053
2016-07-22 9
Tape dimensions [mm]Tape dimensions in mm
Reel dimensions [mm]Reel dimensions in mm
Barcode-Product-Label (BPL)
Dry Packing Process and Materials
Note:
Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card.
Regarding dry pack you will find further information in the internet. Here you will also find the normative
references like JEDEC.
W P0 P1 P2 D0 E F
8 + 0.3 / -0.1 4 ± 0.1 2 ± 0.05
or
4 ± 0.1
2 ± 0.05 1.5 ± 0.1 1.75 ± 0.1 3.5 ± 0.05
A W Nmin W1 W2max
180 8 60 8.4 + 2 14.4
OHA04563
(G) GROUP:
1234567890(1T) LOT NO: (9D) D/C: 1234
(X) PROD NO: 123456789
(6P) BATCH NO: 1234567890
LX XXXX
RoHS Compliant
BIN1: XX-XX-X-XXX-X
MLX
Temp STXXX °C X
Pack: RXX
DEMY XXX
X_X123_1234.1234 X
9999(Q)QTY:
SemiconductorsOSRAM Opto
XX-XX-X-X
EXAMPLE
X_X123_1234.1234 XX_X123_1234.1234 X
EXAMPLE
EXAMPLE
EXAMPLE
XXXXXX
X_X123_1234.1234 XX_X123_1234.1234 X
XX-XX-X-XXX-XX-X-X
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
XXXXXX
X_X123_1234.1234 XX_X123_1234.1234 X
XX-XX-X-XXX-XX-X-X
EXAMPLE
Pack: RXX
XXX
X_X123_1234.1234 XX_X123_1234.1234 X
XX-XX-X-X
EXAMPLE
Pack: RXXPack: RXX
DEMY DEMY
EXAMPLE
12341234
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
(9D) D/C:(9D) D/C: 12341234
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
12341234
EXAMPLE
Pack: RXXPack: RXX
DEMY
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
(9D) D/C:(9D) D/C:
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
(9D) D/C: 1234
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
(9D) D/C:
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
12345678901234567890EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
(6P) BATCH NO:(6P) BATCH NO: 12345678901234567890
SemiconductorsSemiconductors
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
EXAMPLE
(6P) BATCH NO:(6P) BATCH NO: 12345678901234567890EXAMPLE
SemiconductorsSemiconductorsOSRAM OptoOSRAM Opto
EXAMPLE
EXAMPLE
1234567890
X_X123_1234.1234 X
Pack: RXX
DEMY
X_X123_1234.1234 X
(9D) D/C: 1234(9D) D/C:
1234567890(6P) BATCH NO: 1234567890
OSRAM Opto
XXX
X_X123_1234.1234 X
XX-XX-X-X
Pack: RXX
DEMY
Semiconductors
OHA00539
OSRAM
Moisture-sensitive label or print
Barcode label
Desiccant
Humidity indicator
Barcode label
OSRAM
Please check the HIC immidiately afterbag opening.
Discard if circles overrun.Avoid metal contact.
WET
Do not eat.
Comparatorcheck dot
parts still adequately dry.
examine units, if necessary
examine units, if necessary
5%
15%
10%bake units
bake units
If wet,
change desiccant
If wet,
Humidity IndicatorMIL-I-8835
If wet,
Mois
ture
Level 3
Flo
or tim
e 168 H
ours
Mois
ture
Level 6
Flo
or tim
e 6
Hours
a) H
umid
ity In
dicato
r C
ard is
> 1
0% w
hen read a
t 23 ˚
C ±
5 ˚C
, or
reflo
w, v
apor-phase r
eflow
, or equiv
alent p
rocessin
g (peak p
ackage
2. Afte
r th
is b
ag is o
pened, devic
es that w
ill b
e subje
cted to
infrare
d
1. Shelf
life in
seale
d bag: 2
4 month
s at <
40 ˚
C a
nd < 9
0% rela
tive h
umid
ity (R
H).
Mois
ture
Level 5
a
at facto
ry c
onditions o
f
(if b
lank, s
eal date
is id
entical w
ith d
ate c
ode).
a) M
ounted w
ithin
b) S
tore
d at
body tem
p.
3. Devic
es require
bakin
g, befo
re m
ounting, i
f:
Bag s
eal date
Mois
ture
Level 1
Mois
ture
Level 2
Mois
ture
Level 2
a4. If b
aking is
require
d,
b) 2a o
r 2b is
not m
et.
Date
and ti
me o
pened:
refe
rence IP
C/J
ED
EC
J-S
TD
-033 fo
r bake p
rocedure
.
Flo
or tim
e see b
elow
If bla
nk, see b
ar code la
bel
Flo
or tim
e > 1
Year
Flo
or tim
e 1
Year
Flo
or tim
e 4
Weeks10%
RH
.
_<
Mois
ture
Level 4
Mois
ture
Level 5
˚C).
OPTO
SEM
ICO
NDUCTORS
MO
ISTURE S
ENSITIV
E
This b
ag conta
ins
CAUTION
Flo
or tim
e 72 H
ours
Flo
or tim
e 48 H
ours
Flo
or tim
e 24 H
ours
30 ˚C
/60%
RH
.
_<
LE
VE
L
If bla
nk, see
bar code la
bel
![Page 10: CHIPLED® with High Power Infrared Emitter (850 nm) Version 1.4 … · 60˚ 50˚ 40˚ 30˚ 20˚ 10˚ 0 ... XXX °C X Pack: RXX DEMY XXX X_X123_1234.1234 X (Q)QTY: 9999 Semiconductors](https://reader034.vdocuments.us/reader034/viewer/2022042100/5e7c588f436119591b5978b6/html5/thumbnails/10.jpg)
2016-07-22 10
Version 1.4 SFH 4053
Transportation Packing and Materials
Dimensions of transportation box in mm
Width Length Height
200 ± 5 195 ± 5 30 ± 5
OHA02044
PACKVAR:
R077Additional TEXT
P-1+Q-1
Multi TOPLED
Muste
r
OSRAM Opto
Semiconductors
(6P) BATCH NO:
(X) PROD NO:
10
(9D) D/C:
11(1T) LOT NO:
210021998
123GH1234
024 5
(Q)QTY: 2000
0144
(G) GROUP:
260 C RT240 C R
3
220 C R
MLBin3:Bin2: Q
-1-20
Bin1: P-1-20
LSY T6762
2a
Temp ST
R18DEMY
PACKVAR:
R077Additional TEXT
P-1+Q-1
Multi TOPLED
Muste
r
OSRAM Opto
Semiconductors
(6P) BATCH NO:
(X) PROD NO:
10
(9D) D/C:
11(1T) LOT NO:
210021998
123GH1234
024 5
(Q)QTY: 2000
0144
(G) GROUP:
260 C RT240 C R
3
220 C R
MLBin3:Bin2: Q
-1-20
Bin1: P-1-20
LSY T6762
2a
Temp ST
R18DEMY
OSRAM
Packing
Sealing label
Barcode label
Mois
ture
Level 3
Flo
or tim
e 168 H
ours
Mois
ture
Level 6
Flo
or tim
e 6
Hours
a) H
umid
ity In
dicato
r C
ard is
> 1
0% w
hen read a
t 23 ˚
C ±
5 ˚C
, or
reflo
w, v
apor-phase r
eflow
, or equiv
alent p
rocessin
g (peak p
ackage
2. Afte
r th
is b
ag is o
pened, devic
es that w
ill b
e subje
cted to
infrare
d
1. Shelf
life in
seale
d bag: 2
4 month
s at <
40 ˚
C a
nd < 9
0% rela
tive h
umid
ity (R
H).
Mois
ture
Level 5
a
at facto
ry c
onditions o
f
(if b
lank, s
eal date
is id
entical w
ith d
ate c
ode).
a) M
ounted w
ithin
b) S
tore
d at
body tem
p.
3. Devic
es require
bakin
g, befo
re m
ounting, i
f:
Bag s
eal date
Mois
ture
Level 1
Mois
ture
Level 2
Mois
ture
Level 2
a4. If b
aking is
require
d,
b) 2a o
r 2b is
not m
et.
Date
and ti
me o
pened:
refe
rence IP
C/J
ED
EC
J-S
TD
-033 fo
r bake p
rocedure
.
Flo
or tim
e see b
elow
If bla
nk, see b
ar code la
bel
Flo
or tim
e > 1
Year
Flo
or tim
e 1
Year
Flo
or tim
e 4
Weeks10%
RH
.
_<
Mois
ture
Level 4
Mois
ture
Level 5
˚C).
OPTO
SEM
ICO
NDUCTORS
MO
ISTURE S
ENSITIV
E
This b
ag conta
ins
CAUTION
Flo
or tim
e 72 H
ours
Flo
or tim
e 48 H
ours
Flo
or tim
e 24 H
ours
30 ˚C
/60%
RH
.
_<
LE
VE
L
If bla
nk, see
bar code la
bel
Barcode label
![Page 11: CHIPLED® with High Power Infrared Emitter (850 nm) Version 1.4 … · 60˚ 50˚ 40˚ 30˚ 20˚ 10˚ 0 ... XXX °C X Pack: RXX DEMY XXX X_X123_1234.1234 X (Q)QTY: 9999 Semiconductors](https://reader034.vdocuments.us/reader034/viewer/2022042100/5e7c588f436119591b5978b6/html5/thumbnails/11.jpg)
Version 1.4 SFH 4053
2016-07-22 11
Disclaimer
Language english will prevail in case of any discrepancies or deviations between the two language wordings.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances.
For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version in the Internet.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any
costs incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose!
Critical components* may only be used in life-support devices** or systems with the express written approval of
OSRAM OS.
*) A critical component is a component used in a life-support device or system whose failure can reasonably be
expected to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that
device or system.
**) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or
maintain and sustain human life. If they fail, it is reasonable to assume that the health and the life of the user may be
endangered.
![Page 12: CHIPLED® with High Power Infrared Emitter (850 nm) Version 1.4 … · 60˚ 50˚ 40˚ 30˚ 20˚ 10˚ 0 ... XXX °C X Pack: RXX DEMY XXX X_X123_1234.1234 X (Q)QTY: 9999 Semiconductors](https://reader034.vdocuments.us/reader034/viewer/2022042100/5e7c588f436119591b5978b6/html5/thumbnails/12.jpg)
2016-07-22 12
Version 1.4 SFH 4053
Glossary
1) Thermal resistance: junction -ambient, mounted on PC-board (FR4), padsize 5 mm2 each
2) Thermal resistance: junction - soldering point, of the device only, mounted on an ideal heatsink (e.g. metal block)
3) Typical Values: Due to the special conditions of the manufacturing processes of LED, the typical data or
calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily
correspond to the actual parameters of each single product, which could differ from the typical data and calculated
correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data
will be changed without any further notice.
![Page 13: CHIPLED® with High Power Infrared Emitter (850 nm) Version 1.4 … · 60˚ 50˚ 40˚ 30˚ 20˚ 10˚ 0 ... XXX °C X Pack: RXX DEMY XXX X_X123_1234.1234 X (Q)QTY: 9999 Semiconductors](https://reader034.vdocuments.us/reader034/viewer/2022042100/5e7c588f436119591b5978b6/html5/thumbnails/13.jpg)
2016-07-22 13
Version 1.4 SFH 4053
Published by OSRAM Opto Semiconductors GmbH
Leibnizstraße 4, D-93055 Regensburg
www.osram-os.com © All Rights Reserved.