chapter 2 mos transistor theory. nmos operation region
TRANSCRIPT
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Chapter 2
MOS Transistor Theory
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NMOS Operation Region
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Transistor
L
WC
VV
VVVV
I
ox
tgs
dsdstgs
ds
2*2/
2/
0
n=2P
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I-V Curve of MOS
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Intrinsic MOS CapacitanceCO=WLCox
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Diffusion Capacitance
Csb=AS*Cjbs+PS*Cjbssw
In SPICE, simulator will extract AS,AD,PS,PD parameters to calculate the diffusion capacitance of each MOS.
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Non-ideal I-V Effects
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Channel Length Modulation
)1(*2/ 2dstgsds VVVI
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Body Effect
))((0 sVsVV sbtt
Body effect coefficient
For example
))((4.0 sVsV sbt
If Vsb=1.1 V, then
Vt=0.68 V
HW: Exercise 2.6
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Junction Leakage
ID= IS[eVD/vt -1]
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Gate leakage
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Temperature Dependence
In SPICE, all the simulations should pass all the spec. temperature, for example, -40~120C.
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Inverter DC CharacteristicC: PMOS and NMOS all in the saturation region
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Beta RatioBeta ratio>1 =HI-skewedBeta ratio=1 =UnskewedBeta ratio<1 =LO-skewed
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Noise Margin
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Ratioed Inverter
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Pseudo-nMOS Inverter
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Some Issues
HW: Exercise 2.21 & 2.22
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Tristate Inverter
Charge sharing effects
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RC Circuit Model
)(
11
tgsox VVW
L
CR