cgh40120, 120w, gan hemt by cree for general … ma 25˚c maximum drain current1 i dmax 12 a 25˚c...
TRANSCRIPT
1Subject to change without noticewwwcreecomrf
CGH40120F120 W RF Power GaN HEMT
Creersquos CGH40120F is an unmatched gallium nitride (GaN) high electron
mobility transistor (HEMT) The CGH40120F operating from a 28 volt
rail offers a general purpose broadband solution to a variety of RF and
microwave applications GaN HEMTs offer high efficiency high gain and
wide bandwidth capabilities making the CGH40120F ideal for linear and
compressed amplifier circuits The transistor is available in a flange
package
Rev
30
- May
201
5
FEATURES
bull Up to 25 GHz Operation
bull 20 dB Small Signal Gain at 10 GHz
bull 15 dB Small Signal Gain at 20 GHz
bull 120 W Typical PSAT
bull 70 Efficiency at PSAT
bull 28 V Operation
APPLICATIONS
bull 2-Way Private Radio
bull Broadband Amplifiers
bull Cellular Infrastructure
bull Test Instrumentation
bull Class A AB Linear amplifiers suitable for
OFDM W-CDMA EDGE CDMA waveforms
Package Types 440193PN CGH40120F
2 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter Symbol Rating Units Conditions
Drain-Source Voltage VDSS 84 Volts 25˚C
Gate-to-Source Voltage VGS -10 +2 Volts 25˚C
Storage Temperature TSTG -65 +150 ˚C
Operating Junction Temperature TJ 225 ˚C
Maximum Forward Gate Current IGMAX 30 mA 25˚C
Maximum Drain Current1 IDMAX 12 A 25˚C
Soldering Temperature2 TS 245 ˚C
Screw Torque τ 80 in-oz
Thermal Resistance Junction to Case3 RθJC 139 ˚CW 85˚C
Case Operating Temperature34 TC -40 +150 ˚C
Note1 Current limit for long term reliable operation2 Refer to the Application Note on soldering at wwwcreecomRFDocument-Library3 Measured for the CGH40120F at PDISS = 115 W4 See also the Power Dissipation De-rating Curve on Page 7
Electrical Characteristics (TC = 25˚C)
Characteristics Symbol Min Typ Max Units Conditions
DC Characteristics1
Gate Threshold Voltage VGS(th) -38 -30 -23 VDC VDS = 10 V ID = 288 mA
Gate Quiescent Voltage VGS(Q) ndash -27 ndash VDC VDS = 28 V ID = 10 A
Saturated Drain Current2 IDS 232 280 ndash A VDS = 60 V VGS = 20 V
Drain-Source Breakdown Voltage VBR 120 ndash ndash VDC VGS = -8 V ID = 288 mA
RF Characteristics3 (TC = 25˚C F0 = 13 GHz unless otherwise noted)
Small Signal Gain GSS 175 19 ndash dB VDD = 28 V IDQ = 10 A
Power Output4 PSAT 100 120 ndash W VDD = 28 V IDQ = 10 A
Drain Efficiency5 η 55 70 ndash VDD = 28 V IDQ = 10 A POUT = PSAT
Output Mismatch Stress VSWR ndash ndash 10 1 YNo damage at all phase angles VDD = 28 V IDQ = 10 A POUT = 100 W CW
Dynamic Characteristics
Input Capacitance CGS ndash 353 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz
Output Capacitance CDS ndash 91 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz
Feedback Capacitance CGD ndash 16 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz
Notes1 Measured on wafer prior to packaging2 Scaled from PCM data3 Measured in CGH40120F-AMP4 PSAT is defined as IG = 28 mA5 Drain Efficiency = POUT PDC
3 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Performance
Gain and Input Return Loss vs Frequency measured in Broadband Amplifier Circuit CGH40120F-AMP
VDD = 28 V IDQ = 10 A
Gain Output Power and PAE vs Frequency measured inBroadband Amplifier Circuit CGH40120F-AMP
VDD = 28 V IDQ = 10 A
5
15
25
15
20
25
Gai
n(d
B)
CGH40120F S21CGH40120F S11
-25
-15
-5
0
5
10
800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800
Gai
n(d
B)
Frequency (MHz)
100
125
150
20
25
30
Out
putP
ower
(W)
PAE
()
Gai
n(d
B)
0
25
50
75
0
5
10
15
1200 1250 1300 1350 1400
Out
putP
ower
(W)
PAE
()
Gai
n(d
B)
Frequency (MHz)
Gain Output Power PAE
Inpu
t Ret
urn
Loss
(dB
)
Gain
PAE
Output Power
4 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical 800 MHz - 1300 MHz Performance
Gain Output Power and Power Added Efficiency vs Frequency measured in 08-13 GHz Amplifier Circuit 03-000255
VDD = 28 V IDQ = 10 A
Typical Digital Video Broadcast (DVB) Performance
Output Power and Power Added Efficiency vs Frequency measured in DVB Amplifier Circuit 03-000256
VDD = 32 V IDQ = 10 A
65
70
75
80
140
150
160
Pow
erA
dded
Effic
ienc
y(P
AE)
()
Out
putP
ower
(W)
50
55
60
65
100
110
120
130
1350 1375 1400 1425 1450 1475 1500 1525 1550
Pow
erA
dded
Effic
ienc
y(P
AE)
()
Out
putP
ower
(W)
Frequency (MHz)
Output Power (W)PAE ()
75
100
125
150
15
20
25
30
Pow
er(W
)PA
E(
)
Gai
n(d
B)
0
25
50
75
0
5
10
15
750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350
Pow
er(W
)PA
E(
)
Gai
n(d
B)
Frequency (MHz)
Small Signal Gain (dB) Assoc Gain (dB)
Psat (W) PAE ()
Gain (Assoc)
Gain (SS)
PAE
PSAT
5 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Digital Video Broadcast (DVB) Performance
Small Signal Gain and Return Loss vs Frequency of the CGH40120F measured in DVB Amplifier Circuit 03-000256
VDD = 32 V IDQ = 10 A
Typical Constellation Chart and Spectral Mask using 16QAM OFDM for a CGH40120F in DVB Amplifier Circuit 03-000256 at 1450 MHz
VDD = 32 V IDQ = 10 A PAVE = 40 W Drain Efficiency = 40 Signal PAR = 53 dB
1930
-5
5
15
25
-5
5
15
25
Ret
urn
Loss
(dB
)
Gai
n(d
B)
-2141
-35
-25
-15
-5
-35
-25
-15
-5
1200 1300 1400 1500 1600 1700 1800
Ret
urn
Loss
(dB
)
Gai
n(d
B)
Frequency (MHz)
S21
S11
6 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH40120FVDD = 28 V IDQ = 10 A
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40120FVDD = 28 V IDQ = 1 A
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A gt 250 V JEDEC JESD22 A114-D
Charge Device Model CDM 1 lt 200 V JEDEC JESD22 C101-C
MA
G (d
B)
K F
acto
r
Min
imum
Noi
se F
igur
e (d
B)
Noi
se R
esis
tanc
e (O
hms)
7 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F CW Power Dissipation De-rating Curve
Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)
Source and Load Impedances
Frequency (MHz) Z Source Z Load
500 2 + j33 514 + j004
1000 081 + j018 468 - j026
1500 075 - j156 344 - j077
2000 084 - j3 234 - j095
2500 12 - j443 27 - j256
3000 109 - j59 306 - j382
Note 1 VDD = 28V IDQ = 10 A in the 440193 package
Note 2 Optimized for power gain PSAT and PAE
Note 3 When using this device at low frequency series resistors should be used to maintain
amplifier stability
D
Z Source Z Load
G
S
60
80
100
120
Pow
erD
issi
patio
n(W
)
CGH40120F Power Dissipation De-Rating Curve
0
20
40
0 25 50 75 100 125 150 175 200 225 250
Pow
erD
issi
patio
n(W
)
Maximum Temperature (degC)
Note 1
8 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
C1 C30 CAP 27 PF +- 5 250V 0805 ATC 600F 2
C2 CAP 12 pF +- 01 pF 0603 ATC 600S 1
C3 C4 CAP 39 pF +- 01 pF 0603 ATC 600S 2
C5 C6 CAP 47 pF +- 01 pF 0603 ATC 600S 2
C11 C31 CAP 27pF+-5 0603 ATC 600S 2
C12 C32 CAP 100 pF +- 5 0603 ATC 600S 2
C13 C33 CAP 470 pF +- 5100 V 0603 Murata 2
C14 C34 CAP CER 33000 pF 100V X7R 0805 Murata 2
C15 CAP 10 uF 16V SMT TANTALUM 1
C35 CAP CER 10 uF 100V +- 10 X7R 1210 1
C36 CAP 33 uF 100V ELECT FK SMD 1
C20 C21 CAP 56 PF +- 01 pF 0805 ATC 600F 2
C22 C23 CAP 05 PF +- 005 pF 0805 ATC 600F 2
C24 C25 CAP 12 PF +- 01 pF 0805 ATC 600F 2
R1 RES 116W 0603 511 Ohms (le5 tolerance) 1
R2 RES 116W 0603 51 Ohms (le5 tolerance) 1
L1 IND 68 nH 0603 L-14C6N8ST 1
L2 IND FERRITE 220 OHM 0805 BLM21PG221SN1 1
J1 J2 CONN N-Type Female 0500 SMA Flange 2
J3 CONN Header RTgt PLZ 01 CEN LK 9 POS 1
- PCB RO4003 Er = 338 h = 32 mil 1
Q1 CGH40120F 1
CGH40120F-AMP Demonstration Amplifier Circuit
9 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F-AMP Demonstration Amplifier Circuit Schematic
CGH40120F-AMP Demonstration Amplifier Circuit Outline
10 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH40120F(Small Signal VDS = 28 V IDQ = 10 A angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0961 -17760 419 8016 0006 1342 0807 -17957
600 MHz 0961 -17885 349 7738 0006 1530 0808 -17985
700 MHz 0961 -17989 299 7472 0006 1730 0810 17989
800 MHz 0961 17922 261 7216 0007 1936 0811 17966
900 MHz 0961 17841 232 6966 0007 2147 0813 17942
10 GHz 0960 17767 209 6722 0007 2359 0815 17918
11 GHz 0960 17696 189 6483 0007 2571 0817 17894
12 GHz 0960 17628 173 6249 0007 2781 0819 17868
13 GHz 0960 17563 160 6018 0007 2986 0822 17841
14 GHz 0960 17499 148 5792 0008 3186 0824 17813
15 GHz 0960 17436 138 5569 0008 3380 0826 17783
16 GHz 0960 17373 130 5350 0008 3565 0828 17752
17 GHz 0960 17311 122 5135 0008 3740 0830 17719
18 GHz 0959 17249 115 4923 0009 3906 0832 17684
19 GHz 0959 17186 110 4715 0009 4061 0835 17647
20 GHz 0959 17123 104 4509 0010 4204 0837 17609
21 GHz 0958 17059 099 4307 0010 4336 0839 17569
22 GHz 0958 16995 095 4108 0011 4456 0840 17528
23 GHz 0957 16929 091 3912 0011 4564 0842 17485
24 GHz 0957 16863 088 3718 0012 4660 0844 17440
25 GHz 0956 16795 085 3528 0012 4745 0845 17393
26 GHz 0956 16726 082 3339 0013 4818 0847 17345
27 GHz 0955 16656 079 3153 0014 4880 0848 17294
28 GHz 0954 16584 077 2968 0014 4932 0849 17243
29 GHz 0953 16510 075 2786 0015 4974 0850 17189
30 GHz 0952 16434 073 2604 0016 5005 0851 17133
32 GHz 0950 16275 070 2246 0018 5040 0852 17017
34 GHz 0948 16107 068 1891 0020 5038 0852 16893
36 GHz 0944 15927 066 1537 0023 5002 0852 16761
38 GHz 0941 15733 065 1182 0025 4932 0850 16619
40 GHz 0936 15523 064 823 0029 4830 0848 16468
42 GHz 0931 15294 064 457 0033 4694 0844 16306
44 GHz 0925 15043 064 080 0037 4524 0840 16132
46 GHz 0917 14766 065 -312 0042 4318 0834 15944
48 GHz 0908 14459 066 -723 0048 4072 0826 15741
50 GHz 0896 14114 068 -1160 0055 3783 0817 15520
52 GHz 0883 13725 071 -1629 0064 3445 0805 15281
54 GHz 0866 13284 074 -2137 0074 3053 0791 15019
56 GHz 0845 12778 078 -2694 0086 2597 0774 14733
58 GHz 0820 12195 083 -3309 0101 2069 0755 14421
60 GHz 0789 11517 088 -3995 0118 1458 0731 14079
To download the s-parameters in s2p format go to the CGH40120F Product Page and click on the documentation tab
11 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH40120F (Package Type mdash 440193)
12 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Ordering Information
Order Number Description Unit of Measure Image
CGH40120F GaN HEMT Each
CGH40120F-TB Test board without GaN HEMT Each
CGH40120F-AMP Test board with GaN HEMT installed Each
13 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
2 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter Symbol Rating Units Conditions
Drain-Source Voltage VDSS 84 Volts 25˚C
Gate-to-Source Voltage VGS -10 +2 Volts 25˚C
Storage Temperature TSTG -65 +150 ˚C
Operating Junction Temperature TJ 225 ˚C
Maximum Forward Gate Current IGMAX 30 mA 25˚C
Maximum Drain Current1 IDMAX 12 A 25˚C
Soldering Temperature2 TS 245 ˚C
Screw Torque τ 80 in-oz
Thermal Resistance Junction to Case3 RθJC 139 ˚CW 85˚C
Case Operating Temperature34 TC -40 +150 ˚C
Note1 Current limit for long term reliable operation2 Refer to the Application Note on soldering at wwwcreecomRFDocument-Library3 Measured for the CGH40120F at PDISS = 115 W4 See also the Power Dissipation De-rating Curve on Page 7
Electrical Characteristics (TC = 25˚C)
Characteristics Symbol Min Typ Max Units Conditions
DC Characteristics1
Gate Threshold Voltage VGS(th) -38 -30 -23 VDC VDS = 10 V ID = 288 mA
Gate Quiescent Voltage VGS(Q) ndash -27 ndash VDC VDS = 28 V ID = 10 A
Saturated Drain Current2 IDS 232 280 ndash A VDS = 60 V VGS = 20 V
Drain-Source Breakdown Voltage VBR 120 ndash ndash VDC VGS = -8 V ID = 288 mA
RF Characteristics3 (TC = 25˚C F0 = 13 GHz unless otherwise noted)
Small Signal Gain GSS 175 19 ndash dB VDD = 28 V IDQ = 10 A
Power Output4 PSAT 100 120 ndash W VDD = 28 V IDQ = 10 A
Drain Efficiency5 η 55 70 ndash VDD = 28 V IDQ = 10 A POUT = PSAT
Output Mismatch Stress VSWR ndash ndash 10 1 YNo damage at all phase angles VDD = 28 V IDQ = 10 A POUT = 100 W CW
Dynamic Characteristics
Input Capacitance CGS ndash 353 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz
Output Capacitance CDS ndash 91 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz
Feedback Capacitance CGD ndash 16 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz
Notes1 Measured on wafer prior to packaging2 Scaled from PCM data3 Measured in CGH40120F-AMP4 PSAT is defined as IG = 28 mA5 Drain Efficiency = POUT PDC
3 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Performance
Gain and Input Return Loss vs Frequency measured in Broadband Amplifier Circuit CGH40120F-AMP
VDD = 28 V IDQ = 10 A
Gain Output Power and PAE vs Frequency measured inBroadband Amplifier Circuit CGH40120F-AMP
VDD = 28 V IDQ = 10 A
5
15
25
15
20
25
Gai
n(d
B)
CGH40120F S21CGH40120F S11
-25
-15
-5
0
5
10
800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800
Gai
n(d
B)
Frequency (MHz)
100
125
150
20
25
30
Out
putP
ower
(W)
PAE
()
Gai
n(d
B)
0
25
50
75
0
5
10
15
1200 1250 1300 1350 1400
Out
putP
ower
(W)
PAE
()
Gai
n(d
B)
Frequency (MHz)
Gain Output Power PAE
Inpu
t Ret
urn
Loss
(dB
)
Gain
PAE
Output Power
4 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical 800 MHz - 1300 MHz Performance
Gain Output Power and Power Added Efficiency vs Frequency measured in 08-13 GHz Amplifier Circuit 03-000255
VDD = 28 V IDQ = 10 A
Typical Digital Video Broadcast (DVB) Performance
Output Power and Power Added Efficiency vs Frequency measured in DVB Amplifier Circuit 03-000256
VDD = 32 V IDQ = 10 A
65
70
75
80
140
150
160
Pow
erA
dded
Effic
ienc
y(P
AE)
()
Out
putP
ower
(W)
50
55
60
65
100
110
120
130
1350 1375 1400 1425 1450 1475 1500 1525 1550
Pow
erA
dded
Effic
ienc
y(P
AE)
()
Out
putP
ower
(W)
Frequency (MHz)
Output Power (W)PAE ()
75
100
125
150
15
20
25
30
Pow
er(W
)PA
E(
)
Gai
n(d
B)
0
25
50
75
0
5
10
15
750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350
Pow
er(W
)PA
E(
)
Gai
n(d
B)
Frequency (MHz)
Small Signal Gain (dB) Assoc Gain (dB)
Psat (W) PAE ()
Gain (Assoc)
Gain (SS)
PAE
PSAT
5 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Digital Video Broadcast (DVB) Performance
Small Signal Gain and Return Loss vs Frequency of the CGH40120F measured in DVB Amplifier Circuit 03-000256
VDD = 32 V IDQ = 10 A
Typical Constellation Chart and Spectral Mask using 16QAM OFDM for a CGH40120F in DVB Amplifier Circuit 03-000256 at 1450 MHz
VDD = 32 V IDQ = 10 A PAVE = 40 W Drain Efficiency = 40 Signal PAR = 53 dB
1930
-5
5
15
25
-5
5
15
25
Ret
urn
Loss
(dB
)
Gai
n(d
B)
-2141
-35
-25
-15
-5
-35
-25
-15
-5
1200 1300 1400 1500 1600 1700 1800
Ret
urn
Loss
(dB
)
Gai
n(d
B)
Frequency (MHz)
S21
S11
6 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH40120FVDD = 28 V IDQ = 10 A
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40120FVDD = 28 V IDQ = 1 A
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A gt 250 V JEDEC JESD22 A114-D
Charge Device Model CDM 1 lt 200 V JEDEC JESD22 C101-C
MA
G (d
B)
K F
acto
r
Min
imum
Noi
se F
igur
e (d
B)
Noi
se R
esis
tanc
e (O
hms)
7 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F CW Power Dissipation De-rating Curve
Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)
Source and Load Impedances
Frequency (MHz) Z Source Z Load
500 2 + j33 514 + j004
1000 081 + j018 468 - j026
1500 075 - j156 344 - j077
2000 084 - j3 234 - j095
2500 12 - j443 27 - j256
3000 109 - j59 306 - j382
Note 1 VDD = 28V IDQ = 10 A in the 440193 package
Note 2 Optimized for power gain PSAT and PAE
Note 3 When using this device at low frequency series resistors should be used to maintain
amplifier stability
D
Z Source Z Load
G
S
60
80
100
120
Pow
erD
issi
patio
n(W
)
CGH40120F Power Dissipation De-Rating Curve
0
20
40
0 25 50 75 100 125 150 175 200 225 250
Pow
erD
issi
patio
n(W
)
Maximum Temperature (degC)
Note 1
8 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
C1 C30 CAP 27 PF +- 5 250V 0805 ATC 600F 2
C2 CAP 12 pF +- 01 pF 0603 ATC 600S 1
C3 C4 CAP 39 pF +- 01 pF 0603 ATC 600S 2
C5 C6 CAP 47 pF +- 01 pF 0603 ATC 600S 2
C11 C31 CAP 27pF+-5 0603 ATC 600S 2
C12 C32 CAP 100 pF +- 5 0603 ATC 600S 2
C13 C33 CAP 470 pF +- 5100 V 0603 Murata 2
C14 C34 CAP CER 33000 pF 100V X7R 0805 Murata 2
C15 CAP 10 uF 16V SMT TANTALUM 1
C35 CAP CER 10 uF 100V +- 10 X7R 1210 1
C36 CAP 33 uF 100V ELECT FK SMD 1
C20 C21 CAP 56 PF +- 01 pF 0805 ATC 600F 2
C22 C23 CAP 05 PF +- 005 pF 0805 ATC 600F 2
C24 C25 CAP 12 PF +- 01 pF 0805 ATC 600F 2
R1 RES 116W 0603 511 Ohms (le5 tolerance) 1
R2 RES 116W 0603 51 Ohms (le5 tolerance) 1
L1 IND 68 nH 0603 L-14C6N8ST 1
L2 IND FERRITE 220 OHM 0805 BLM21PG221SN1 1
J1 J2 CONN N-Type Female 0500 SMA Flange 2
J3 CONN Header RTgt PLZ 01 CEN LK 9 POS 1
- PCB RO4003 Er = 338 h = 32 mil 1
Q1 CGH40120F 1
CGH40120F-AMP Demonstration Amplifier Circuit
9 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F-AMP Demonstration Amplifier Circuit Schematic
CGH40120F-AMP Demonstration Amplifier Circuit Outline
10 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH40120F(Small Signal VDS = 28 V IDQ = 10 A angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0961 -17760 419 8016 0006 1342 0807 -17957
600 MHz 0961 -17885 349 7738 0006 1530 0808 -17985
700 MHz 0961 -17989 299 7472 0006 1730 0810 17989
800 MHz 0961 17922 261 7216 0007 1936 0811 17966
900 MHz 0961 17841 232 6966 0007 2147 0813 17942
10 GHz 0960 17767 209 6722 0007 2359 0815 17918
11 GHz 0960 17696 189 6483 0007 2571 0817 17894
12 GHz 0960 17628 173 6249 0007 2781 0819 17868
13 GHz 0960 17563 160 6018 0007 2986 0822 17841
14 GHz 0960 17499 148 5792 0008 3186 0824 17813
15 GHz 0960 17436 138 5569 0008 3380 0826 17783
16 GHz 0960 17373 130 5350 0008 3565 0828 17752
17 GHz 0960 17311 122 5135 0008 3740 0830 17719
18 GHz 0959 17249 115 4923 0009 3906 0832 17684
19 GHz 0959 17186 110 4715 0009 4061 0835 17647
20 GHz 0959 17123 104 4509 0010 4204 0837 17609
21 GHz 0958 17059 099 4307 0010 4336 0839 17569
22 GHz 0958 16995 095 4108 0011 4456 0840 17528
23 GHz 0957 16929 091 3912 0011 4564 0842 17485
24 GHz 0957 16863 088 3718 0012 4660 0844 17440
25 GHz 0956 16795 085 3528 0012 4745 0845 17393
26 GHz 0956 16726 082 3339 0013 4818 0847 17345
27 GHz 0955 16656 079 3153 0014 4880 0848 17294
28 GHz 0954 16584 077 2968 0014 4932 0849 17243
29 GHz 0953 16510 075 2786 0015 4974 0850 17189
30 GHz 0952 16434 073 2604 0016 5005 0851 17133
32 GHz 0950 16275 070 2246 0018 5040 0852 17017
34 GHz 0948 16107 068 1891 0020 5038 0852 16893
36 GHz 0944 15927 066 1537 0023 5002 0852 16761
38 GHz 0941 15733 065 1182 0025 4932 0850 16619
40 GHz 0936 15523 064 823 0029 4830 0848 16468
42 GHz 0931 15294 064 457 0033 4694 0844 16306
44 GHz 0925 15043 064 080 0037 4524 0840 16132
46 GHz 0917 14766 065 -312 0042 4318 0834 15944
48 GHz 0908 14459 066 -723 0048 4072 0826 15741
50 GHz 0896 14114 068 -1160 0055 3783 0817 15520
52 GHz 0883 13725 071 -1629 0064 3445 0805 15281
54 GHz 0866 13284 074 -2137 0074 3053 0791 15019
56 GHz 0845 12778 078 -2694 0086 2597 0774 14733
58 GHz 0820 12195 083 -3309 0101 2069 0755 14421
60 GHz 0789 11517 088 -3995 0118 1458 0731 14079
To download the s-parameters in s2p format go to the CGH40120F Product Page and click on the documentation tab
11 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH40120F (Package Type mdash 440193)
12 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Ordering Information
Order Number Description Unit of Measure Image
CGH40120F GaN HEMT Each
CGH40120F-TB Test board without GaN HEMT Each
CGH40120F-AMP Test board with GaN HEMT installed Each
13 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
3 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Performance
Gain and Input Return Loss vs Frequency measured in Broadband Amplifier Circuit CGH40120F-AMP
VDD = 28 V IDQ = 10 A
Gain Output Power and PAE vs Frequency measured inBroadband Amplifier Circuit CGH40120F-AMP
VDD = 28 V IDQ = 10 A
5
15
25
15
20
25
Gai
n(d
B)
CGH40120F S21CGH40120F S11
-25
-15
-5
0
5
10
800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800
Gai
n(d
B)
Frequency (MHz)
100
125
150
20
25
30
Out
putP
ower
(W)
PAE
()
Gai
n(d
B)
0
25
50
75
0
5
10
15
1200 1250 1300 1350 1400
Out
putP
ower
(W)
PAE
()
Gai
n(d
B)
Frequency (MHz)
Gain Output Power PAE
Inpu
t Ret
urn
Loss
(dB
)
Gain
PAE
Output Power
4 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical 800 MHz - 1300 MHz Performance
Gain Output Power and Power Added Efficiency vs Frequency measured in 08-13 GHz Amplifier Circuit 03-000255
VDD = 28 V IDQ = 10 A
Typical Digital Video Broadcast (DVB) Performance
Output Power and Power Added Efficiency vs Frequency measured in DVB Amplifier Circuit 03-000256
VDD = 32 V IDQ = 10 A
65
70
75
80
140
150
160
Pow
erA
dded
Effic
ienc
y(P
AE)
()
Out
putP
ower
(W)
50
55
60
65
100
110
120
130
1350 1375 1400 1425 1450 1475 1500 1525 1550
Pow
erA
dded
Effic
ienc
y(P
AE)
()
Out
putP
ower
(W)
Frequency (MHz)
Output Power (W)PAE ()
75
100
125
150
15
20
25
30
Pow
er(W
)PA
E(
)
Gai
n(d
B)
0
25
50
75
0
5
10
15
750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350
Pow
er(W
)PA
E(
)
Gai
n(d
B)
Frequency (MHz)
Small Signal Gain (dB) Assoc Gain (dB)
Psat (W) PAE ()
Gain (Assoc)
Gain (SS)
PAE
PSAT
5 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Digital Video Broadcast (DVB) Performance
Small Signal Gain and Return Loss vs Frequency of the CGH40120F measured in DVB Amplifier Circuit 03-000256
VDD = 32 V IDQ = 10 A
Typical Constellation Chart and Spectral Mask using 16QAM OFDM for a CGH40120F in DVB Amplifier Circuit 03-000256 at 1450 MHz
VDD = 32 V IDQ = 10 A PAVE = 40 W Drain Efficiency = 40 Signal PAR = 53 dB
1930
-5
5
15
25
-5
5
15
25
Ret
urn
Loss
(dB
)
Gai
n(d
B)
-2141
-35
-25
-15
-5
-35
-25
-15
-5
1200 1300 1400 1500 1600 1700 1800
Ret
urn
Loss
(dB
)
Gai
n(d
B)
Frequency (MHz)
S21
S11
6 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH40120FVDD = 28 V IDQ = 10 A
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40120FVDD = 28 V IDQ = 1 A
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A gt 250 V JEDEC JESD22 A114-D
Charge Device Model CDM 1 lt 200 V JEDEC JESD22 C101-C
MA
G (d
B)
K F
acto
r
Min
imum
Noi
se F
igur
e (d
B)
Noi
se R
esis
tanc
e (O
hms)
7 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F CW Power Dissipation De-rating Curve
Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)
Source and Load Impedances
Frequency (MHz) Z Source Z Load
500 2 + j33 514 + j004
1000 081 + j018 468 - j026
1500 075 - j156 344 - j077
2000 084 - j3 234 - j095
2500 12 - j443 27 - j256
3000 109 - j59 306 - j382
Note 1 VDD = 28V IDQ = 10 A in the 440193 package
Note 2 Optimized for power gain PSAT and PAE
Note 3 When using this device at low frequency series resistors should be used to maintain
amplifier stability
D
Z Source Z Load
G
S
60
80
100
120
Pow
erD
issi
patio
n(W
)
CGH40120F Power Dissipation De-Rating Curve
0
20
40
0 25 50 75 100 125 150 175 200 225 250
Pow
erD
issi
patio
n(W
)
Maximum Temperature (degC)
Note 1
8 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
C1 C30 CAP 27 PF +- 5 250V 0805 ATC 600F 2
C2 CAP 12 pF +- 01 pF 0603 ATC 600S 1
C3 C4 CAP 39 pF +- 01 pF 0603 ATC 600S 2
C5 C6 CAP 47 pF +- 01 pF 0603 ATC 600S 2
C11 C31 CAP 27pF+-5 0603 ATC 600S 2
C12 C32 CAP 100 pF +- 5 0603 ATC 600S 2
C13 C33 CAP 470 pF +- 5100 V 0603 Murata 2
C14 C34 CAP CER 33000 pF 100V X7R 0805 Murata 2
C15 CAP 10 uF 16V SMT TANTALUM 1
C35 CAP CER 10 uF 100V +- 10 X7R 1210 1
C36 CAP 33 uF 100V ELECT FK SMD 1
C20 C21 CAP 56 PF +- 01 pF 0805 ATC 600F 2
C22 C23 CAP 05 PF +- 005 pF 0805 ATC 600F 2
C24 C25 CAP 12 PF +- 01 pF 0805 ATC 600F 2
R1 RES 116W 0603 511 Ohms (le5 tolerance) 1
R2 RES 116W 0603 51 Ohms (le5 tolerance) 1
L1 IND 68 nH 0603 L-14C6N8ST 1
L2 IND FERRITE 220 OHM 0805 BLM21PG221SN1 1
J1 J2 CONN N-Type Female 0500 SMA Flange 2
J3 CONN Header RTgt PLZ 01 CEN LK 9 POS 1
- PCB RO4003 Er = 338 h = 32 mil 1
Q1 CGH40120F 1
CGH40120F-AMP Demonstration Amplifier Circuit
9 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F-AMP Demonstration Amplifier Circuit Schematic
CGH40120F-AMP Demonstration Amplifier Circuit Outline
10 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH40120F(Small Signal VDS = 28 V IDQ = 10 A angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0961 -17760 419 8016 0006 1342 0807 -17957
600 MHz 0961 -17885 349 7738 0006 1530 0808 -17985
700 MHz 0961 -17989 299 7472 0006 1730 0810 17989
800 MHz 0961 17922 261 7216 0007 1936 0811 17966
900 MHz 0961 17841 232 6966 0007 2147 0813 17942
10 GHz 0960 17767 209 6722 0007 2359 0815 17918
11 GHz 0960 17696 189 6483 0007 2571 0817 17894
12 GHz 0960 17628 173 6249 0007 2781 0819 17868
13 GHz 0960 17563 160 6018 0007 2986 0822 17841
14 GHz 0960 17499 148 5792 0008 3186 0824 17813
15 GHz 0960 17436 138 5569 0008 3380 0826 17783
16 GHz 0960 17373 130 5350 0008 3565 0828 17752
17 GHz 0960 17311 122 5135 0008 3740 0830 17719
18 GHz 0959 17249 115 4923 0009 3906 0832 17684
19 GHz 0959 17186 110 4715 0009 4061 0835 17647
20 GHz 0959 17123 104 4509 0010 4204 0837 17609
21 GHz 0958 17059 099 4307 0010 4336 0839 17569
22 GHz 0958 16995 095 4108 0011 4456 0840 17528
23 GHz 0957 16929 091 3912 0011 4564 0842 17485
24 GHz 0957 16863 088 3718 0012 4660 0844 17440
25 GHz 0956 16795 085 3528 0012 4745 0845 17393
26 GHz 0956 16726 082 3339 0013 4818 0847 17345
27 GHz 0955 16656 079 3153 0014 4880 0848 17294
28 GHz 0954 16584 077 2968 0014 4932 0849 17243
29 GHz 0953 16510 075 2786 0015 4974 0850 17189
30 GHz 0952 16434 073 2604 0016 5005 0851 17133
32 GHz 0950 16275 070 2246 0018 5040 0852 17017
34 GHz 0948 16107 068 1891 0020 5038 0852 16893
36 GHz 0944 15927 066 1537 0023 5002 0852 16761
38 GHz 0941 15733 065 1182 0025 4932 0850 16619
40 GHz 0936 15523 064 823 0029 4830 0848 16468
42 GHz 0931 15294 064 457 0033 4694 0844 16306
44 GHz 0925 15043 064 080 0037 4524 0840 16132
46 GHz 0917 14766 065 -312 0042 4318 0834 15944
48 GHz 0908 14459 066 -723 0048 4072 0826 15741
50 GHz 0896 14114 068 -1160 0055 3783 0817 15520
52 GHz 0883 13725 071 -1629 0064 3445 0805 15281
54 GHz 0866 13284 074 -2137 0074 3053 0791 15019
56 GHz 0845 12778 078 -2694 0086 2597 0774 14733
58 GHz 0820 12195 083 -3309 0101 2069 0755 14421
60 GHz 0789 11517 088 -3995 0118 1458 0731 14079
To download the s-parameters in s2p format go to the CGH40120F Product Page and click on the documentation tab
11 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH40120F (Package Type mdash 440193)
12 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Ordering Information
Order Number Description Unit of Measure Image
CGH40120F GaN HEMT Each
CGH40120F-TB Test board without GaN HEMT Each
CGH40120F-AMP Test board with GaN HEMT installed Each
13 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
4 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical 800 MHz - 1300 MHz Performance
Gain Output Power and Power Added Efficiency vs Frequency measured in 08-13 GHz Amplifier Circuit 03-000255
VDD = 28 V IDQ = 10 A
Typical Digital Video Broadcast (DVB) Performance
Output Power and Power Added Efficiency vs Frequency measured in DVB Amplifier Circuit 03-000256
VDD = 32 V IDQ = 10 A
65
70
75
80
140
150
160
Pow
erA
dded
Effic
ienc
y(P
AE)
()
Out
putP
ower
(W)
50
55
60
65
100
110
120
130
1350 1375 1400 1425 1450 1475 1500 1525 1550
Pow
erA
dded
Effic
ienc
y(P
AE)
()
Out
putP
ower
(W)
Frequency (MHz)
Output Power (W)PAE ()
75
100
125
150
15
20
25
30
Pow
er(W
)PA
E(
)
Gai
n(d
B)
0
25
50
75
0
5
10
15
750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350
Pow
er(W
)PA
E(
)
Gai
n(d
B)
Frequency (MHz)
Small Signal Gain (dB) Assoc Gain (dB)
Psat (W) PAE ()
Gain (Assoc)
Gain (SS)
PAE
PSAT
5 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Digital Video Broadcast (DVB) Performance
Small Signal Gain and Return Loss vs Frequency of the CGH40120F measured in DVB Amplifier Circuit 03-000256
VDD = 32 V IDQ = 10 A
Typical Constellation Chart and Spectral Mask using 16QAM OFDM for a CGH40120F in DVB Amplifier Circuit 03-000256 at 1450 MHz
VDD = 32 V IDQ = 10 A PAVE = 40 W Drain Efficiency = 40 Signal PAR = 53 dB
1930
-5
5
15
25
-5
5
15
25
Ret
urn
Loss
(dB
)
Gai
n(d
B)
-2141
-35
-25
-15
-5
-35
-25
-15
-5
1200 1300 1400 1500 1600 1700 1800
Ret
urn
Loss
(dB
)
Gai
n(d
B)
Frequency (MHz)
S21
S11
6 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH40120FVDD = 28 V IDQ = 10 A
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40120FVDD = 28 V IDQ = 1 A
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A gt 250 V JEDEC JESD22 A114-D
Charge Device Model CDM 1 lt 200 V JEDEC JESD22 C101-C
MA
G (d
B)
K F
acto
r
Min
imum
Noi
se F
igur
e (d
B)
Noi
se R
esis
tanc
e (O
hms)
7 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F CW Power Dissipation De-rating Curve
Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)
Source and Load Impedances
Frequency (MHz) Z Source Z Load
500 2 + j33 514 + j004
1000 081 + j018 468 - j026
1500 075 - j156 344 - j077
2000 084 - j3 234 - j095
2500 12 - j443 27 - j256
3000 109 - j59 306 - j382
Note 1 VDD = 28V IDQ = 10 A in the 440193 package
Note 2 Optimized for power gain PSAT and PAE
Note 3 When using this device at low frequency series resistors should be used to maintain
amplifier stability
D
Z Source Z Load
G
S
60
80
100
120
Pow
erD
issi
patio
n(W
)
CGH40120F Power Dissipation De-Rating Curve
0
20
40
0 25 50 75 100 125 150 175 200 225 250
Pow
erD
issi
patio
n(W
)
Maximum Temperature (degC)
Note 1
8 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
C1 C30 CAP 27 PF +- 5 250V 0805 ATC 600F 2
C2 CAP 12 pF +- 01 pF 0603 ATC 600S 1
C3 C4 CAP 39 pF +- 01 pF 0603 ATC 600S 2
C5 C6 CAP 47 pF +- 01 pF 0603 ATC 600S 2
C11 C31 CAP 27pF+-5 0603 ATC 600S 2
C12 C32 CAP 100 pF +- 5 0603 ATC 600S 2
C13 C33 CAP 470 pF +- 5100 V 0603 Murata 2
C14 C34 CAP CER 33000 pF 100V X7R 0805 Murata 2
C15 CAP 10 uF 16V SMT TANTALUM 1
C35 CAP CER 10 uF 100V +- 10 X7R 1210 1
C36 CAP 33 uF 100V ELECT FK SMD 1
C20 C21 CAP 56 PF +- 01 pF 0805 ATC 600F 2
C22 C23 CAP 05 PF +- 005 pF 0805 ATC 600F 2
C24 C25 CAP 12 PF +- 01 pF 0805 ATC 600F 2
R1 RES 116W 0603 511 Ohms (le5 tolerance) 1
R2 RES 116W 0603 51 Ohms (le5 tolerance) 1
L1 IND 68 nH 0603 L-14C6N8ST 1
L2 IND FERRITE 220 OHM 0805 BLM21PG221SN1 1
J1 J2 CONN N-Type Female 0500 SMA Flange 2
J3 CONN Header RTgt PLZ 01 CEN LK 9 POS 1
- PCB RO4003 Er = 338 h = 32 mil 1
Q1 CGH40120F 1
CGH40120F-AMP Demonstration Amplifier Circuit
9 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F-AMP Demonstration Amplifier Circuit Schematic
CGH40120F-AMP Demonstration Amplifier Circuit Outline
10 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH40120F(Small Signal VDS = 28 V IDQ = 10 A angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0961 -17760 419 8016 0006 1342 0807 -17957
600 MHz 0961 -17885 349 7738 0006 1530 0808 -17985
700 MHz 0961 -17989 299 7472 0006 1730 0810 17989
800 MHz 0961 17922 261 7216 0007 1936 0811 17966
900 MHz 0961 17841 232 6966 0007 2147 0813 17942
10 GHz 0960 17767 209 6722 0007 2359 0815 17918
11 GHz 0960 17696 189 6483 0007 2571 0817 17894
12 GHz 0960 17628 173 6249 0007 2781 0819 17868
13 GHz 0960 17563 160 6018 0007 2986 0822 17841
14 GHz 0960 17499 148 5792 0008 3186 0824 17813
15 GHz 0960 17436 138 5569 0008 3380 0826 17783
16 GHz 0960 17373 130 5350 0008 3565 0828 17752
17 GHz 0960 17311 122 5135 0008 3740 0830 17719
18 GHz 0959 17249 115 4923 0009 3906 0832 17684
19 GHz 0959 17186 110 4715 0009 4061 0835 17647
20 GHz 0959 17123 104 4509 0010 4204 0837 17609
21 GHz 0958 17059 099 4307 0010 4336 0839 17569
22 GHz 0958 16995 095 4108 0011 4456 0840 17528
23 GHz 0957 16929 091 3912 0011 4564 0842 17485
24 GHz 0957 16863 088 3718 0012 4660 0844 17440
25 GHz 0956 16795 085 3528 0012 4745 0845 17393
26 GHz 0956 16726 082 3339 0013 4818 0847 17345
27 GHz 0955 16656 079 3153 0014 4880 0848 17294
28 GHz 0954 16584 077 2968 0014 4932 0849 17243
29 GHz 0953 16510 075 2786 0015 4974 0850 17189
30 GHz 0952 16434 073 2604 0016 5005 0851 17133
32 GHz 0950 16275 070 2246 0018 5040 0852 17017
34 GHz 0948 16107 068 1891 0020 5038 0852 16893
36 GHz 0944 15927 066 1537 0023 5002 0852 16761
38 GHz 0941 15733 065 1182 0025 4932 0850 16619
40 GHz 0936 15523 064 823 0029 4830 0848 16468
42 GHz 0931 15294 064 457 0033 4694 0844 16306
44 GHz 0925 15043 064 080 0037 4524 0840 16132
46 GHz 0917 14766 065 -312 0042 4318 0834 15944
48 GHz 0908 14459 066 -723 0048 4072 0826 15741
50 GHz 0896 14114 068 -1160 0055 3783 0817 15520
52 GHz 0883 13725 071 -1629 0064 3445 0805 15281
54 GHz 0866 13284 074 -2137 0074 3053 0791 15019
56 GHz 0845 12778 078 -2694 0086 2597 0774 14733
58 GHz 0820 12195 083 -3309 0101 2069 0755 14421
60 GHz 0789 11517 088 -3995 0118 1458 0731 14079
To download the s-parameters in s2p format go to the CGH40120F Product Page and click on the documentation tab
11 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH40120F (Package Type mdash 440193)
12 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Ordering Information
Order Number Description Unit of Measure Image
CGH40120F GaN HEMT Each
CGH40120F-TB Test board without GaN HEMT Each
CGH40120F-AMP Test board with GaN HEMT installed Each
13 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
5 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Digital Video Broadcast (DVB) Performance
Small Signal Gain and Return Loss vs Frequency of the CGH40120F measured in DVB Amplifier Circuit 03-000256
VDD = 32 V IDQ = 10 A
Typical Constellation Chart and Spectral Mask using 16QAM OFDM for a CGH40120F in DVB Amplifier Circuit 03-000256 at 1450 MHz
VDD = 32 V IDQ = 10 A PAVE = 40 W Drain Efficiency = 40 Signal PAR = 53 dB
1930
-5
5
15
25
-5
5
15
25
Ret
urn
Loss
(dB
)
Gai
n(d
B)
-2141
-35
-25
-15
-5
-35
-25
-15
-5
1200 1300 1400 1500 1600 1700 1800
Ret
urn
Loss
(dB
)
Gai
n(d
B)
Frequency (MHz)
S21
S11
6 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH40120FVDD = 28 V IDQ = 10 A
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40120FVDD = 28 V IDQ = 1 A
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A gt 250 V JEDEC JESD22 A114-D
Charge Device Model CDM 1 lt 200 V JEDEC JESD22 C101-C
MA
G (d
B)
K F
acto
r
Min
imum
Noi
se F
igur
e (d
B)
Noi
se R
esis
tanc
e (O
hms)
7 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F CW Power Dissipation De-rating Curve
Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)
Source and Load Impedances
Frequency (MHz) Z Source Z Load
500 2 + j33 514 + j004
1000 081 + j018 468 - j026
1500 075 - j156 344 - j077
2000 084 - j3 234 - j095
2500 12 - j443 27 - j256
3000 109 - j59 306 - j382
Note 1 VDD = 28V IDQ = 10 A in the 440193 package
Note 2 Optimized for power gain PSAT and PAE
Note 3 When using this device at low frequency series resistors should be used to maintain
amplifier stability
D
Z Source Z Load
G
S
60
80
100
120
Pow
erD
issi
patio
n(W
)
CGH40120F Power Dissipation De-Rating Curve
0
20
40
0 25 50 75 100 125 150 175 200 225 250
Pow
erD
issi
patio
n(W
)
Maximum Temperature (degC)
Note 1
8 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
C1 C30 CAP 27 PF +- 5 250V 0805 ATC 600F 2
C2 CAP 12 pF +- 01 pF 0603 ATC 600S 1
C3 C4 CAP 39 pF +- 01 pF 0603 ATC 600S 2
C5 C6 CAP 47 pF +- 01 pF 0603 ATC 600S 2
C11 C31 CAP 27pF+-5 0603 ATC 600S 2
C12 C32 CAP 100 pF +- 5 0603 ATC 600S 2
C13 C33 CAP 470 pF +- 5100 V 0603 Murata 2
C14 C34 CAP CER 33000 pF 100V X7R 0805 Murata 2
C15 CAP 10 uF 16V SMT TANTALUM 1
C35 CAP CER 10 uF 100V +- 10 X7R 1210 1
C36 CAP 33 uF 100V ELECT FK SMD 1
C20 C21 CAP 56 PF +- 01 pF 0805 ATC 600F 2
C22 C23 CAP 05 PF +- 005 pF 0805 ATC 600F 2
C24 C25 CAP 12 PF +- 01 pF 0805 ATC 600F 2
R1 RES 116W 0603 511 Ohms (le5 tolerance) 1
R2 RES 116W 0603 51 Ohms (le5 tolerance) 1
L1 IND 68 nH 0603 L-14C6N8ST 1
L2 IND FERRITE 220 OHM 0805 BLM21PG221SN1 1
J1 J2 CONN N-Type Female 0500 SMA Flange 2
J3 CONN Header RTgt PLZ 01 CEN LK 9 POS 1
- PCB RO4003 Er = 338 h = 32 mil 1
Q1 CGH40120F 1
CGH40120F-AMP Demonstration Amplifier Circuit
9 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F-AMP Demonstration Amplifier Circuit Schematic
CGH40120F-AMP Demonstration Amplifier Circuit Outline
10 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH40120F(Small Signal VDS = 28 V IDQ = 10 A angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0961 -17760 419 8016 0006 1342 0807 -17957
600 MHz 0961 -17885 349 7738 0006 1530 0808 -17985
700 MHz 0961 -17989 299 7472 0006 1730 0810 17989
800 MHz 0961 17922 261 7216 0007 1936 0811 17966
900 MHz 0961 17841 232 6966 0007 2147 0813 17942
10 GHz 0960 17767 209 6722 0007 2359 0815 17918
11 GHz 0960 17696 189 6483 0007 2571 0817 17894
12 GHz 0960 17628 173 6249 0007 2781 0819 17868
13 GHz 0960 17563 160 6018 0007 2986 0822 17841
14 GHz 0960 17499 148 5792 0008 3186 0824 17813
15 GHz 0960 17436 138 5569 0008 3380 0826 17783
16 GHz 0960 17373 130 5350 0008 3565 0828 17752
17 GHz 0960 17311 122 5135 0008 3740 0830 17719
18 GHz 0959 17249 115 4923 0009 3906 0832 17684
19 GHz 0959 17186 110 4715 0009 4061 0835 17647
20 GHz 0959 17123 104 4509 0010 4204 0837 17609
21 GHz 0958 17059 099 4307 0010 4336 0839 17569
22 GHz 0958 16995 095 4108 0011 4456 0840 17528
23 GHz 0957 16929 091 3912 0011 4564 0842 17485
24 GHz 0957 16863 088 3718 0012 4660 0844 17440
25 GHz 0956 16795 085 3528 0012 4745 0845 17393
26 GHz 0956 16726 082 3339 0013 4818 0847 17345
27 GHz 0955 16656 079 3153 0014 4880 0848 17294
28 GHz 0954 16584 077 2968 0014 4932 0849 17243
29 GHz 0953 16510 075 2786 0015 4974 0850 17189
30 GHz 0952 16434 073 2604 0016 5005 0851 17133
32 GHz 0950 16275 070 2246 0018 5040 0852 17017
34 GHz 0948 16107 068 1891 0020 5038 0852 16893
36 GHz 0944 15927 066 1537 0023 5002 0852 16761
38 GHz 0941 15733 065 1182 0025 4932 0850 16619
40 GHz 0936 15523 064 823 0029 4830 0848 16468
42 GHz 0931 15294 064 457 0033 4694 0844 16306
44 GHz 0925 15043 064 080 0037 4524 0840 16132
46 GHz 0917 14766 065 -312 0042 4318 0834 15944
48 GHz 0908 14459 066 -723 0048 4072 0826 15741
50 GHz 0896 14114 068 -1160 0055 3783 0817 15520
52 GHz 0883 13725 071 -1629 0064 3445 0805 15281
54 GHz 0866 13284 074 -2137 0074 3053 0791 15019
56 GHz 0845 12778 078 -2694 0086 2597 0774 14733
58 GHz 0820 12195 083 -3309 0101 2069 0755 14421
60 GHz 0789 11517 088 -3995 0118 1458 0731 14079
To download the s-parameters in s2p format go to the CGH40120F Product Page and click on the documentation tab
11 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH40120F (Package Type mdash 440193)
12 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Ordering Information
Order Number Description Unit of Measure Image
CGH40120F GaN HEMT Each
CGH40120F-TB Test board without GaN HEMT Each
CGH40120F-AMP Test board with GaN HEMT installed Each
13 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
6 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH40120FVDD = 28 V IDQ = 10 A
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40120FVDD = 28 V IDQ = 1 A
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A gt 250 V JEDEC JESD22 A114-D
Charge Device Model CDM 1 lt 200 V JEDEC JESD22 C101-C
MA
G (d
B)
K F
acto
r
Min
imum
Noi
se F
igur
e (d
B)
Noi
se R
esis
tanc
e (O
hms)
7 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F CW Power Dissipation De-rating Curve
Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)
Source and Load Impedances
Frequency (MHz) Z Source Z Load
500 2 + j33 514 + j004
1000 081 + j018 468 - j026
1500 075 - j156 344 - j077
2000 084 - j3 234 - j095
2500 12 - j443 27 - j256
3000 109 - j59 306 - j382
Note 1 VDD = 28V IDQ = 10 A in the 440193 package
Note 2 Optimized for power gain PSAT and PAE
Note 3 When using this device at low frequency series resistors should be used to maintain
amplifier stability
D
Z Source Z Load
G
S
60
80
100
120
Pow
erD
issi
patio
n(W
)
CGH40120F Power Dissipation De-Rating Curve
0
20
40
0 25 50 75 100 125 150 175 200 225 250
Pow
erD
issi
patio
n(W
)
Maximum Temperature (degC)
Note 1
8 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
C1 C30 CAP 27 PF +- 5 250V 0805 ATC 600F 2
C2 CAP 12 pF +- 01 pF 0603 ATC 600S 1
C3 C4 CAP 39 pF +- 01 pF 0603 ATC 600S 2
C5 C6 CAP 47 pF +- 01 pF 0603 ATC 600S 2
C11 C31 CAP 27pF+-5 0603 ATC 600S 2
C12 C32 CAP 100 pF +- 5 0603 ATC 600S 2
C13 C33 CAP 470 pF +- 5100 V 0603 Murata 2
C14 C34 CAP CER 33000 pF 100V X7R 0805 Murata 2
C15 CAP 10 uF 16V SMT TANTALUM 1
C35 CAP CER 10 uF 100V +- 10 X7R 1210 1
C36 CAP 33 uF 100V ELECT FK SMD 1
C20 C21 CAP 56 PF +- 01 pF 0805 ATC 600F 2
C22 C23 CAP 05 PF +- 005 pF 0805 ATC 600F 2
C24 C25 CAP 12 PF +- 01 pF 0805 ATC 600F 2
R1 RES 116W 0603 511 Ohms (le5 tolerance) 1
R2 RES 116W 0603 51 Ohms (le5 tolerance) 1
L1 IND 68 nH 0603 L-14C6N8ST 1
L2 IND FERRITE 220 OHM 0805 BLM21PG221SN1 1
J1 J2 CONN N-Type Female 0500 SMA Flange 2
J3 CONN Header RTgt PLZ 01 CEN LK 9 POS 1
- PCB RO4003 Er = 338 h = 32 mil 1
Q1 CGH40120F 1
CGH40120F-AMP Demonstration Amplifier Circuit
9 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F-AMP Demonstration Amplifier Circuit Schematic
CGH40120F-AMP Demonstration Amplifier Circuit Outline
10 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH40120F(Small Signal VDS = 28 V IDQ = 10 A angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0961 -17760 419 8016 0006 1342 0807 -17957
600 MHz 0961 -17885 349 7738 0006 1530 0808 -17985
700 MHz 0961 -17989 299 7472 0006 1730 0810 17989
800 MHz 0961 17922 261 7216 0007 1936 0811 17966
900 MHz 0961 17841 232 6966 0007 2147 0813 17942
10 GHz 0960 17767 209 6722 0007 2359 0815 17918
11 GHz 0960 17696 189 6483 0007 2571 0817 17894
12 GHz 0960 17628 173 6249 0007 2781 0819 17868
13 GHz 0960 17563 160 6018 0007 2986 0822 17841
14 GHz 0960 17499 148 5792 0008 3186 0824 17813
15 GHz 0960 17436 138 5569 0008 3380 0826 17783
16 GHz 0960 17373 130 5350 0008 3565 0828 17752
17 GHz 0960 17311 122 5135 0008 3740 0830 17719
18 GHz 0959 17249 115 4923 0009 3906 0832 17684
19 GHz 0959 17186 110 4715 0009 4061 0835 17647
20 GHz 0959 17123 104 4509 0010 4204 0837 17609
21 GHz 0958 17059 099 4307 0010 4336 0839 17569
22 GHz 0958 16995 095 4108 0011 4456 0840 17528
23 GHz 0957 16929 091 3912 0011 4564 0842 17485
24 GHz 0957 16863 088 3718 0012 4660 0844 17440
25 GHz 0956 16795 085 3528 0012 4745 0845 17393
26 GHz 0956 16726 082 3339 0013 4818 0847 17345
27 GHz 0955 16656 079 3153 0014 4880 0848 17294
28 GHz 0954 16584 077 2968 0014 4932 0849 17243
29 GHz 0953 16510 075 2786 0015 4974 0850 17189
30 GHz 0952 16434 073 2604 0016 5005 0851 17133
32 GHz 0950 16275 070 2246 0018 5040 0852 17017
34 GHz 0948 16107 068 1891 0020 5038 0852 16893
36 GHz 0944 15927 066 1537 0023 5002 0852 16761
38 GHz 0941 15733 065 1182 0025 4932 0850 16619
40 GHz 0936 15523 064 823 0029 4830 0848 16468
42 GHz 0931 15294 064 457 0033 4694 0844 16306
44 GHz 0925 15043 064 080 0037 4524 0840 16132
46 GHz 0917 14766 065 -312 0042 4318 0834 15944
48 GHz 0908 14459 066 -723 0048 4072 0826 15741
50 GHz 0896 14114 068 -1160 0055 3783 0817 15520
52 GHz 0883 13725 071 -1629 0064 3445 0805 15281
54 GHz 0866 13284 074 -2137 0074 3053 0791 15019
56 GHz 0845 12778 078 -2694 0086 2597 0774 14733
58 GHz 0820 12195 083 -3309 0101 2069 0755 14421
60 GHz 0789 11517 088 -3995 0118 1458 0731 14079
To download the s-parameters in s2p format go to the CGH40120F Product Page and click on the documentation tab
11 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH40120F (Package Type mdash 440193)
12 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Ordering Information
Order Number Description Unit of Measure Image
CGH40120F GaN HEMT Each
CGH40120F-TB Test board without GaN HEMT Each
CGH40120F-AMP Test board with GaN HEMT installed Each
13 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
7 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F CW Power Dissipation De-rating Curve
Note 1 Area exceeds Maximum Case Operating Temperature (See Page 2)
Source and Load Impedances
Frequency (MHz) Z Source Z Load
500 2 + j33 514 + j004
1000 081 + j018 468 - j026
1500 075 - j156 344 - j077
2000 084 - j3 234 - j095
2500 12 - j443 27 - j256
3000 109 - j59 306 - j382
Note 1 VDD = 28V IDQ = 10 A in the 440193 package
Note 2 Optimized for power gain PSAT and PAE
Note 3 When using this device at low frequency series resistors should be used to maintain
amplifier stability
D
Z Source Z Load
G
S
60
80
100
120
Pow
erD
issi
patio
n(W
)
CGH40120F Power Dissipation De-Rating Curve
0
20
40
0 25 50 75 100 125 150 175 200 225 250
Pow
erD
issi
patio
n(W
)
Maximum Temperature (degC)
Note 1
8 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
C1 C30 CAP 27 PF +- 5 250V 0805 ATC 600F 2
C2 CAP 12 pF +- 01 pF 0603 ATC 600S 1
C3 C4 CAP 39 pF +- 01 pF 0603 ATC 600S 2
C5 C6 CAP 47 pF +- 01 pF 0603 ATC 600S 2
C11 C31 CAP 27pF+-5 0603 ATC 600S 2
C12 C32 CAP 100 pF +- 5 0603 ATC 600S 2
C13 C33 CAP 470 pF +- 5100 V 0603 Murata 2
C14 C34 CAP CER 33000 pF 100V X7R 0805 Murata 2
C15 CAP 10 uF 16V SMT TANTALUM 1
C35 CAP CER 10 uF 100V +- 10 X7R 1210 1
C36 CAP 33 uF 100V ELECT FK SMD 1
C20 C21 CAP 56 PF +- 01 pF 0805 ATC 600F 2
C22 C23 CAP 05 PF +- 005 pF 0805 ATC 600F 2
C24 C25 CAP 12 PF +- 01 pF 0805 ATC 600F 2
R1 RES 116W 0603 511 Ohms (le5 tolerance) 1
R2 RES 116W 0603 51 Ohms (le5 tolerance) 1
L1 IND 68 nH 0603 L-14C6N8ST 1
L2 IND FERRITE 220 OHM 0805 BLM21PG221SN1 1
J1 J2 CONN N-Type Female 0500 SMA Flange 2
J3 CONN Header RTgt PLZ 01 CEN LK 9 POS 1
- PCB RO4003 Er = 338 h = 32 mil 1
Q1 CGH40120F 1
CGH40120F-AMP Demonstration Amplifier Circuit
9 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F-AMP Demonstration Amplifier Circuit Schematic
CGH40120F-AMP Demonstration Amplifier Circuit Outline
10 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH40120F(Small Signal VDS = 28 V IDQ = 10 A angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0961 -17760 419 8016 0006 1342 0807 -17957
600 MHz 0961 -17885 349 7738 0006 1530 0808 -17985
700 MHz 0961 -17989 299 7472 0006 1730 0810 17989
800 MHz 0961 17922 261 7216 0007 1936 0811 17966
900 MHz 0961 17841 232 6966 0007 2147 0813 17942
10 GHz 0960 17767 209 6722 0007 2359 0815 17918
11 GHz 0960 17696 189 6483 0007 2571 0817 17894
12 GHz 0960 17628 173 6249 0007 2781 0819 17868
13 GHz 0960 17563 160 6018 0007 2986 0822 17841
14 GHz 0960 17499 148 5792 0008 3186 0824 17813
15 GHz 0960 17436 138 5569 0008 3380 0826 17783
16 GHz 0960 17373 130 5350 0008 3565 0828 17752
17 GHz 0960 17311 122 5135 0008 3740 0830 17719
18 GHz 0959 17249 115 4923 0009 3906 0832 17684
19 GHz 0959 17186 110 4715 0009 4061 0835 17647
20 GHz 0959 17123 104 4509 0010 4204 0837 17609
21 GHz 0958 17059 099 4307 0010 4336 0839 17569
22 GHz 0958 16995 095 4108 0011 4456 0840 17528
23 GHz 0957 16929 091 3912 0011 4564 0842 17485
24 GHz 0957 16863 088 3718 0012 4660 0844 17440
25 GHz 0956 16795 085 3528 0012 4745 0845 17393
26 GHz 0956 16726 082 3339 0013 4818 0847 17345
27 GHz 0955 16656 079 3153 0014 4880 0848 17294
28 GHz 0954 16584 077 2968 0014 4932 0849 17243
29 GHz 0953 16510 075 2786 0015 4974 0850 17189
30 GHz 0952 16434 073 2604 0016 5005 0851 17133
32 GHz 0950 16275 070 2246 0018 5040 0852 17017
34 GHz 0948 16107 068 1891 0020 5038 0852 16893
36 GHz 0944 15927 066 1537 0023 5002 0852 16761
38 GHz 0941 15733 065 1182 0025 4932 0850 16619
40 GHz 0936 15523 064 823 0029 4830 0848 16468
42 GHz 0931 15294 064 457 0033 4694 0844 16306
44 GHz 0925 15043 064 080 0037 4524 0840 16132
46 GHz 0917 14766 065 -312 0042 4318 0834 15944
48 GHz 0908 14459 066 -723 0048 4072 0826 15741
50 GHz 0896 14114 068 -1160 0055 3783 0817 15520
52 GHz 0883 13725 071 -1629 0064 3445 0805 15281
54 GHz 0866 13284 074 -2137 0074 3053 0791 15019
56 GHz 0845 12778 078 -2694 0086 2597 0774 14733
58 GHz 0820 12195 083 -3309 0101 2069 0755 14421
60 GHz 0789 11517 088 -3995 0118 1458 0731 14079
To download the s-parameters in s2p format go to the CGH40120F Product Page and click on the documentation tab
11 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH40120F (Package Type mdash 440193)
12 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Ordering Information
Order Number Description Unit of Measure Image
CGH40120F GaN HEMT Each
CGH40120F-TB Test board without GaN HEMT Each
CGH40120F-AMP Test board with GaN HEMT installed Each
13 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
8 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
C1 C30 CAP 27 PF +- 5 250V 0805 ATC 600F 2
C2 CAP 12 pF +- 01 pF 0603 ATC 600S 1
C3 C4 CAP 39 pF +- 01 pF 0603 ATC 600S 2
C5 C6 CAP 47 pF +- 01 pF 0603 ATC 600S 2
C11 C31 CAP 27pF+-5 0603 ATC 600S 2
C12 C32 CAP 100 pF +- 5 0603 ATC 600S 2
C13 C33 CAP 470 pF +- 5100 V 0603 Murata 2
C14 C34 CAP CER 33000 pF 100V X7R 0805 Murata 2
C15 CAP 10 uF 16V SMT TANTALUM 1
C35 CAP CER 10 uF 100V +- 10 X7R 1210 1
C36 CAP 33 uF 100V ELECT FK SMD 1
C20 C21 CAP 56 PF +- 01 pF 0805 ATC 600F 2
C22 C23 CAP 05 PF +- 005 pF 0805 ATC 600F 2
C24 C25 CAP 12 PF +- 01 pF 0805 ATC 600F 2
R1 RES 116W 0603 511 Ohms (le5 tolerance) 1
R2 RES 116W 0603 51 Ohms (le5 tolerance) 1
L1 IND 68 nH 0603 L-14C6N8ST 1
L2 IND FERRITE 220 OHM 0805 BLM21PG221SN1 1
J1 J2 CONN N-Type Female 0500 SMA Flange 2
J3 CONN Header RTgt PLZ 01 CEN LK 9 POS 1
- PCB RO4003 Er = 338 h = 32 mil 1
Q1 CGH40120F 1
CGH40120F-AMP Demonstration Amplifier Circuit
9 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F-AMP Demonstration Amplifier Circuit Schematic
CGH40120F-AMP Demonstration Amplifier Circuit Outline
10 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH40120F(Small Signal VDS = 28 V IDQ = 10 A angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0961 -17760 419 8016 0006 1342 0807 -17957
600 MHz 0961 -17885 349 7738 0006 1530 0808 -17985
700 MHz 0961 -17989 299 7472 0006 1730 0810 17989
800 MHz 0961 17922 261 7216 0007 1936 0811 17966
900 MHz 0961 17841 232 6966 0007 2147 0813 17942
10 GHz 0960 17767 209 6722 0007 2359 0815 17918
11 GHz 0960 17696 189 6483 0007 2571 0817 17894
12 GHz 0960 17628 173 6249 0007 2781 0819 17868
13 GHz 0960 17563 160 6018 0007 2986 0822 17841
14 GHz 0960 17499 148 5792 0008 3186 0824 17813
15 GHz 0960 17436 138 5569 0008 3380 0826 17783
16 GHz 0960 17373 130 5350 0008 3565 0828 17752
17 GHz 0960 17311 122 5135 0008 3740 0830 17719
18 GHz 0959 17249 115 4923 0009 3906 0832 17684
19 GHz 0959 17186 110 4715 0009 4061 0835 17647
20 GHz 0959 17123 104 4509 0010 4204 0837 17609
21 GHz 0958 17059 099 4307 0010 4336 0839 17569
22 GHz 0958 16995 095 4108 0011 4456 0840 17528
23 GHz 0957 16929 091 3912 0011 4564 0842 17485
24 GHz 0957 16863 088 3718 0012 4660 0844 17440
25 GHz 0956 16795 085 3528 0012 4745 0845 17393
26 GHz 0956 16726 082 3339 0013 4818 0847 17345
27 GHz 0955 16656 079 3153 0014 4880 0848 17294
28 GHz 0954 16584 077 2968 0014 4932 0849 17243
29 GHz 0953 16510 075 2786 0015 4974 0850 17189
30 GHz 0952 16434 073 2604 0016 5005 0851 17133
32 GHz 0950 16275 070 2246 0018 5040 0852 17017
34 GHz 0948 16107 068 1891 0020 5038 0852 16893
36 GHz 0944 15927 066 1537 0023 5002 0852 16761
38 GHz 0941 15733 065 1182 0025 4932 0850 16619
40 GHz 0936 15523 064 823 0029 4830 0848 16468
42 GHz 0931 15294 064 457 0033 4694 0844 16306
44 GHz 0925 15043 064 080 0037 4524 0840 16132
46 GHz 0917 14766 065 -312 0042 4318 0834 15944
48 GHz 0908 14459 066 -723 0048 4072 0826 15741
50 GHz 0896 14114 068 -1160 0055 3783 0817 15520
52 GHz 0883 13725 071 -1629 0064 3445 0805 15281
54 GHz 0866 13284 074 -2137 0074 3053 0791 15019
56 GHz 0845 12778 078 -2694 0086 2597 0774 14733
58 GHz 0820 12195 083 -3309 0101 2069 0755 14421
60 GHz 0789 11517 088 -3995 0118 1458 0731 14079
To download the s-parameters in s2p format go to the CGH40120F Product Page and click on the documentation tab
11 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH40120F (Package Type mdash 440193)
12 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Ordering Information
Order Number Description Unit of Measure Image
CGH40120F GaN HEMT Each
CGH40120F-TB Test board without GaN HEMT Each
CGH40120F-AMP Test board with GaN HEMT installed Each
13 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
9 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH40120F-AMP Demonstration Amplifier Circuit Schematic
CGH40120F-AMP Demonstration Amplifier Circuit Outline
10 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH40120F(Small Signal VDS = 28 V IDQ = 10 A angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0961 -17760 419 8016 0006 1342 0807 -17957
600 MHz 0961 -17885 349 7738 0006 1530 0808 -17985
700 MHz 0961 -17989 299 7472 0006 1730 0810 17989
800 MHz 0961 17922 261 7216 0007 1936 0811 17966
900 MHz 0961 17841 232 6966 0007 2147 0813 17942
10 GHz 0960 17767 209 6722 0007 2359 0815 17918
11 GHz 0960 17696 189 6483 0007 2571 0817 17894
12 GHz 0960 17628 173 6249 0007 2781 0819 17868
13 GHz 0960 17563 160 6018 0007 2986 0822 17841
14 GHz 0960 17499 148 5792 0008 3186 0824 17813
15 GHz 0960 17436 138 5569 0008 3380 0826 17783
16 GHz 0960 17373 130 5350 0008 3565 0828 17752
17 GHz 0960 17311 122 5135 0008 3740 0830 17719
18 GHz 0959 17249 115 4923 0009 3906 0832 17684
19 GHz 0959 17186 110 4715 0009 4061 0835 17647
20 GHz 0959 17123 104 4509 0010 4204 0837 17609
21 GHz 0958 17059 099 4307 0010 4336 0839 17569
22 GHz 0958 16995 095 4108 0011 4456 0840 17528
23 GHz 0957 16929 091 3912 0011 4564 0842 17485
24 GHz 0957 16863 088 3718 0012 4660 0844 17440
25 GHz 0956 16795 085 3528 0012 4745 0845 17393
26 GHz 0956 16726 082 3339 0013 4818 0847 17345
27 GHz 0955 16656 079 3153 0014 4880 0848 17294
28 GHz 0954 16584 077 2968 0014 4932 0849 17243
29 GHz 0953 16510 075 2786 0015 4974 0850 17189
30 GHz 0952 16434 073 2604 0016 5005 0851 17133
32 GHz 0950 16275 070 2246 0018 5040 0852 17017
34 GHz 0948 16107 068 1891 0020 5038 0852 16893
36 GHz 0944 15927 066 1537 0023 5002 0852 16761
38 GHz 0941 15733 065 1182 0025 4932 0850 16619
40 GHz 0936 15523 064 823 0029 4830 0848 16468
42 GHz 0931 15294 064 457 0033 4694 0844 16306
44 GHz 0925 15043 064 080 0037 4524 0840 16132
46 GHz 0917 14766 065 -312 0042 4318 0834 15944
48 GHz 0908 14459 066 -723 0048 4072 0826 15741
50 GHz 0896 14114 068 -1160 0055 3783 0817 15520
52 GHz 0883 13725 071 -1629 0064 3445 0805 15281
54 GHz 0866 13284 074 -2137 0074 3053 0791 15019
56 GHz 0845 12778 078 -2694 0086 2597 0774 14733
58 GHz 0820 12195 083 -3309 0101 2069 0755 14421
60 GHz 0789 11517 088 -3995 0118 1458 0731 14079
To download the s-parameters in s2p format go to the CGH40120F Product Page and click on the documentation tab
11 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH40120F (Package Type mdash 440193)
12 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Ordering Information
Order Number Description Unit of Measure Image
CGH40120F GaN HEMT Each
CGH40120F-TB Test board without GaN HEMT Each
CGH40120F-AMP Test board with GaN HEMT installed Each
13 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
10 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH40120F(Small Signal VDS = 28 V IDQ = 10 A angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0961 -17760 419 8016 0006 1342 0807 -17957
600 MHz 0961 -17885 349 7738 0006 1530 0808 -17985
700 MHz 0961 -17989 299 7472 0006 1730 0810 17989
800 MHz 0961 17922 261 7216 0007 1936 0811 17966
900 MHz 0961 17841 232 6966 0007 2147 0813 17942
10 GHz 0960 17767 209 6722 0007 2359 0815 17918
11 GHz 0960 17696 189 6483 0007 2571 0817 17894
12 GHz 0960 17628 173 6249 0007 2781 0819 17868
13 GHz 0960 17563 160 6018 0007 2986 0822 17841
14 GHz 0960 17499 148 5792 0008 3186 0824 17813
15 GHz 0960 17436 138 5569 0008 3380 0826 17783
16 GHz 0960 17373 130 5350 0008 3565 0828 17752
17 GHz 0960 17311 122 5135 0008 3740 0830 17719
18 GHz 0959 17249 115 4923 0009 3906 0832 17684
19 GHz 0959 17186 110 4715 0009 4061 0835 17647
20 GHz 0959 17123 104 4509 0010 4204 0837 17609
21 GHz 0958 17059 099 4307 0010 4336 0839 17569
22 GHz 0958 16995 095 4108 0011 4456 0840 17528
23 GHz 0957 16929 091 3912 0011 4564 0842 17485
24 GHz 0957 16863 088 3718 0012 4660 0844 17440
25 GHz 0956 16795 085 3528 0012 4745 0845 17393
26 GHz 0956 16726 082 3339 0013 4818 0847 17345
27 GHz 0955 16656 079 3153 0014 4880 0848 17294
28 GHz 0954 16584 077 2968 0014 4932 0849 17243
29 GHz 0953 16510 075 2786 0015 4974 0850 17189
30 GHz 0952 16434 073 2604 0016 5005 0851 17133
32 GHz 0950 16275 070 2246 0018 5040 0852 17017
34 GHz 0948 16107 068 1891 0020 5038 0852 16893
36 GHz 0944 15927 066 1537 0023 5002 0852 16761
38 GHz 0941 15733 065 1182 0025 4932 0850 16619
40 GHz 0936 15523 064 823 0029 4830 0848 16468
42 GHz 0931 15294 064 457 0033 4694 0844 16306
44 GHz 0925 15043 064 080 0037 4524 0840 16132
46 GHz 0917 14766 065 -312 0042 4318 0834 15944
48 GHz 0908 14459 066 -723 0048 4072 0826 15741
50 GHz 0896 14114 068 -1160 0055 3783 0817 15520
52 GHz 0883 13725 071 -1629 0064 3445 0805 15281
54 GHz 0866 13284 074 -2137 0074 3053 0791 15019
56 GHz 0845 12778 078 -2694 0086 2597 0774 14733
58 GHz 0820 12195 083 -3309 0101 2069 0755 14421
60 GHz 0789 11517 088 -3995 0118 1458 0731 14079
To download the s-parameters in s2p format go to the CGH40120F Product Page and click on the documentation tab
11 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH40120F (Package Type mdash 440193)
12 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Ordering Information
Order Number Description Unit of Measure Image
CGH40120F GaN HEMT Each
CGH40120F-TB Test board without GaN HEMT Each
CGH40120F-AMP Test board with GaN HEMT installed Each
13 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
11 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH40120F (Package Type mdash 440193)
12 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Ordering Information
Order Number Description Unit of Measure Image
CGH40120F GaN HEMT Each
CGH40120F-TB Test board without GaN HEMT Each
CGH40120F-AMP Test board with GaN HEMT installed Each
13 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
12 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Ordering Information
Order Number Description Unit of Measure Image
CGH40120F GaN HEMT Each
CGH40120F-TB Test board without GaN HEMT Each
CGH40120F-AMP Test board with GaN HEMT installed Each
13 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
13 CGH40120F Rev 30
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639