certificate -...
TRANSCRIPT
i
Dr. C.M. PADMA, M.Sc.,M.Phil.,Ph.D.
(Supervisor)
Associate Professor and HOD of Physics
Women's Christian College
Nagercoil - 629 001
Tamilnadu, India
and
Dr. C.K. MAHADEVAN, M.Sc.,Ph.D.,D.Sc.,M.N.A.Sc. (Co-Supervisor)
Associate Professor of Physics (Retired)
S.T.Hindu College
Nagercoil – 629 002
Tamilnadu, India
CERTIFICATE
This thesis entitled “STUDIES ON II-VI COMPOUND ADDED ADP
SINGLE CRYSTALS” submitted by J.ANITHA HUDSON for the award of
Degree of Doctor of Philosophy in Physics of Manonmaniam Sundaranar
University is a record of bonafide research work done by her and it has not been
submitted for the award of any degree, diploma, associateship, fellowship of any
University / Institution.
Place : Nagercoil
Date : June 20, 2014
Signature of Co-Supervisor Signature of Supervisor
ii
J. ANITHA HUDSON, M.Sc., M.Phil., B.Ed.
Physics Research Centre
Women's Christian College
Nagercoil - 629 001
Tamilnadu, India
DECLARATION
I hereby declare that the thesis entitled “STUDIES ON II-VI
COMPOUND ADDED ADP SINGLE CRYSTALS” submitted by me for the
Degree of Doctor of Philosophy in Physics is the result of my original and
independent research work carried out under the Guidance of Dr. C.M. PADMA,
Head of the Department of Physics, Women's Christian College,
Nagercoil - 629 001 and Co-guidance of Dr. C.K. MAHADEVAN, Associate
Professor of Physics (Retired), S.T.Hindu College, Nagercoil - 629002 and it has
not been submitted for the award of any degree, diploma, associateship, fellowship
of any University or Institution.
Place : Nagercoil
Date : June 20, 2014 J. ANITHA HUDSON
iii
ACKNOWLEDGEMENT
First and foremost, I raise my heart in profound gratitude to God Almighty
for his love and grace all through my life and especially during the course of this
research study.
I express my deep sense of gratitute to my guide, Dr. C.M. Padma (Head
of the Department of Physics, Women's Christian College, Nagercoil) for her
goodwill to be friendly, motivating, supporting, encouraging and guiding me at
every stage of my work and also I appreciate her generous willingness for the
successful completion of my research work. I am equally indebted to
Dr. C.K. Mahadevan, (Associate Professor of Physics (Retired), S.T.Hindu
College, Nagercoil) who spent much of his valuable time to sharpen my ideas that
enabled me to undertake this research work with courage and confidence .
I record my thanks to the Management of Women's Christian College for
extending the facilities to my research work. I am grateful to
Dr. Nirmala Nallathamby, the Principal of Women's Christian College, Nagercoil
for her encouragement and help.
I am greatly indebted to Dr. J. Daisy Magdaline, Department of Physics,
Rani Anna College, Tirunelveli for her timely help and suggestions. I would like
to extend my heartfelt thanks to the faculty members in the Physics Department of
Women's Christian College and S.T.Hindu College for their kind support and co-
operation during my research work. My special thanks to Dr. K.U. Madhu,
Dr. M. Meena and Dr. G. Jenita Christobel.
iv
I would like to extend my heartfelt thanks to my friends, fellow researchers
and former full time Ph.D Scholars Mrs. O.V. Mary Sheeja, Dr. S. Nagaveena,
Dr. C. Latha, Mrs. S.I. Srikrishna Ramya, Dr. R. Sunitha, Dr. I.S. Prameela
Kumari, Dr. D. Shiney Manoj, Dr. G. Deepa, Dr. K. Usha for their kind
encouragement and support.
I acknowledge the love, concern and moral support rendered by my
husband Mr. Y. Kevin Isaad, my affectionate children K. Ana Jessica and
K.Aaron Joshua, my beloved parents and in-laws during the tenure of my
research work.
My special thanks to Miss.Malar, Print Land, Nagercoil for her sincere
efforts in drafting of my thesis.
Finally, I extend my gratefullness to all those who have helped me directly
or indirectly in various ways throughout my research work.
J. ANITHA HUDSON
v
ABSTRACT
Name of the Candidate : J.ANITHA HUDSON
Research Centre and : Physics Research Centre,
Institution Women's Christian College,
Nagercoil – 629 001,
Tamil Nadu, India.
Submitted to : Manonmaniam Sundaranar University,
Tirunelveli – 627 012.
Field of study : Solid State Physics - Crystal Growth and
Characterization
Subject : PHYSICS
Guided : Dr. C.M. PADMA
Head of the Department of Physics
Women's Christian College
Nagercoil - 629 001
Co-Guided : Dr. C.K. MAHADEVAN
Associate Professor of Physics (Retired)
S.T. Hindu College
Nagercoil - 629 002
Title of the Thesis : STUDIES ON II-VI COMPOUND ADDED
ADP SINGLE CRYSTALS
No. of pages : xxiii + 218 + 20 (paper copies)
Key words : Ammonium dihydrogen phosphate; Slow
evaporation solution growth technique; II-VI
Compounds; Cadmium sulphide; Zinc
sulphide; Single crystals; X-ray diffraction;
FTIR; AAS; UV-Vis-NIR; Microhardness;
SHG; TG/DTA; Dielectric constant;
Dielectric loss; AC and DC electrical
conductivities.
vi
Most of the extraordinary achievements in modern technology have been
accomplished through the development of microelectronic, optoelectronic and
optical devices made of artificial crystals. The emergence of new high quality
single crystals remains a challenging endeavour of material science. Hence, the
discovery, growth and characterisation of novel materials and their design
especially in single crystal form is an urgent need.
Ammonium dihydrogen phosphate (ADP) is a commercially available
material with numerous laser based applications. ADP crystals exhibit excellent
dielectric, piezoelectric, electro-optic, nonlinear optical and antiferroelectric
properties. ADP crystals are commonly used in frequency conversion applications
such as second, third and fourth harmonic generation and in electro-optic
modulation. Easy growth of large single crystals, a broad transparency range and
relatively low production cost are the qualities that make this crystal attractive and
well suited to a variety of applications.
Dopants play an important role in improving the properties of a crystal.
Now a days the synthesis and properties of highly luminescent II-VI compound
semiconductor nanoparticles cadmium sulphide and zinc sulphide have been
extensively investigated from the basic research point of view to the application
field. But generally II-VI compounds including CdS and ZnS do not dissolve in
water. Now, the challenging problem is to find a way to dissolve II-VI compounds
CdS and ZnS and use them as dopants. Literature review also reveals that II-VI
compounds as additives have improved material properties.
vii
Therefore, with an aim of improving the quality of ADP crystals with better
nonlinear optical properties for both academic use and industrial applications, pure
and II-VI compounds (CdS and ZnS nanoparticles) doped ADP single crystals
were grown by using the slow evaporation solution growth technique at room
temperature. The dopants (CdS and ZnS) used in the present study were
synthesised by a simple microwave assisted solvothermal method. Ethylene
diamine was used as a capping agent to enhance their solubility in water. The
solubility of CdS and ZnS nanoparticles were found by the gravitational method.
A total of eleven crystals were grown and characterized.
The identity test of the crystal starts with X-ray diffraction studies, powder
X-ray diffraction studies were carried out to characterize the grown crystals
structurally. FTIR spectral analysis was carried out to identify the functional
groups of the grown crystals and band assignments were done for the crystals
grown in the present study. Atomic absorption spectral analysis was carried out
for the doped crystals to estimate the amount of metal ions present quantitatively.
The UV-Vis-NIR spectral study was carried out which reveals the wide
optical transmission window possessed by the grown crystals, an essential property
for NLO crystals. The initial testing of materials for second harmonic generation
was done with Kurtz-Perry powder technique to confirm the SHG efficiency of the
grown crystals. The crystals were also subjected to thermogravimetric (TG) and
differential thermal analysis (DTA) to understand their thermal stability.
DC and AC electrical measurements were carried out along both a- and c-
directions by the two probe-method and parallel plate capacitor method
viii
respectively. Measurements were carried out at various temperatures ranging from
40-150 0C. DC and AC activation energies were also determined.
Ethylene diamine capped CdS and ZnS nanoparticles show enhanced
solubility. Results show that there is a significant enhancement of SHG efficiency
and CdS and ZnS doping helped in tuning significantly the optical and electrical
properties of ADP crystal.
A report of this research work is presented in this thesis.
ix
LIST OF TABLES
TABLE
NO. TITLE
PAGE
NO.
1.1 Recent trends in crystal growth 65
3.1
The estimated average lattice parameters (the e.s.d.s are
given in parentheses) and metal atom contents in the doped
crystals
118
3.2 FTIR wavenumbers and their vibrational assignments for
Pure ADP, CADP-5 and ZADP-5 crystals 121
3.3
The estimated work hardening co-efficients (n), optical cutoff
wavelengths, optical transmission percentages and SHG
efficiencies (in ADP unit) for pure and doped ADP crystals
131
3.4 Dielectric constant values for pure and CdS doped ADP
crystals along 'a' direction 134
3.5 Dielectric constant values for pure and CdS doped ADP
crystals along 'c' direction 134
3.6 Dielectric constant values for pure and ZnS doped ADP
crystals along 'a' direction 135
3.7 Dielectric constant values for pure and ZnS doped ADP
crystals along 'c' direction 135
3.8 Dielectric loss factor values for pure and CdS doped ADP
crystals along 'a' direction 141
3.9 Dielectric loss factor values for pure and CdS doped ADP
crystals along 'c' direction 141
3.10 Dielectric loss factor values for pure and ZnS doped ADP
crystals along 'a' direction 142
3.11 Dielectric loss factor values for pure and ZnS doped ADP
crystals along 'c' direction 142
3.12 AC electrical conductivity values for pure and CdS doped
ADP crystals along 'a' direction 150
3.13 AC electrical conductivity values for pure and CdS doped
ADP crystals along 'c' direction 150
x
TABLE
NO. TITLE
PAGE
NO.
3.14 AC electrical conductivity values for pure and ZnS doped
ADP crystals along 'a' direction 151
3.15 AC electrical conductivity values for pure and ZnS doped
ADP crystals along 'c' direction 151
3.16 DC electrical conductivity values for pure and CdS doped
ADP crystals along 'a' direction 156
3.17 DC electrical conductivity values for pure and CdS doped
ADP crystals along 'c' direction 156
3.18 DC electrical conductivity values for pure and ZnS doped
ADP crystals along 'a' direction 157
3.19 DC electrical conductivity values for pure and ZnS doped
ADP crystals along 'c' direction 157
3.20 Activation energies estimated for pure and CdS doped ADP
crystals 163
3.21 Activation energies estimated for pure and ZnS doped ADP
crystals. 163
C-1 Indexed PXRD data for pure ADP 207
C-2 Indexed PXRD data for CADP-1 208
C-3 Indexed PXRD data for CADP-2 209
C-4 Indexed PXRD data for CADP-3 210
C-5 Indexed PXRD data for CADP-4 211
C-6 Indexed PXRD data for CADP-5 212
C-7 Indexed PXRD data for ZADP-1 213
C-8 Indexed PXRD data for ZADP-2 214
C-9 Indexed PXRD data for ZADP-3 215
C-10 Indexed PXRD data for ZADP-4 216
C-11 Indexed PXRD data for ZADP-5 217
xi
LIST OF FIGURES
Figure
No. Title
Page
No.
1.1 Classification of solid materials 5
1.2 Estimated shares of world crystal production in 1999 5
1.3 Inter-disciplinary nature of crystal growth technology 12
1.4 Categories of crystal growth techniques 12
1.5 Solubility diagram showing different levels of saturation 24
1.6 Schematic diagram of the apparatus for the slow cooling
method 28
1.7 Schematic diagram of the apparatus for the temperature
gradient method 28
1.8 Experimental set up for the SR method 30
1.9 Schematic diagram of a simple apparatus for the slow (free)
evaporation method 30
1.10 The external morphology of ADP single crystal 36
1.11 The (100) projection of ADP structure 36
1.12 The picture of ADP molecule 38
1.13 The unit cell structure of ADP crystal 38
1.14 The bond graph of ADP 38
2.1 Photographs of the as-prepared CdS nanoparticles: (a) with
capping and (b) without capping 76
2.2 Photographs of the as-prepared ZnS nanoparticles: (a) with
capping and (b) without capping 76
2.3 Powder sample diffracts X-ray beam in cones 83
xii
Figure
No. Title
Page
No.
2.4 The diffractometer beam path in θ/2θ mode 83
2.5 A photograph of the powder X-ray diffractometer 83
2.6 Schematic diagram of the atomic absorption process 89
2.7 The calibration graph between concentration and absorbance 89
2.8 Schematic diagram of FTIR spectrometer 89
2.9 Schematic diagram of Vicker's pyramid indendation mark 97
2.10 Schematic diagram of resistance to motion of dislocations 97
2.11 Vicker's hardness tester 97
2.12 Energy level diagram with electronic transitions 107
2.13 Photograph of an experimental set up for UV-Vis-NIR
spectral recording 107
2.14 Schematic experimental set up for SHG efficiency
measurement 107
2.15 Photograph of an LCR meter 111
2.16 Photograph of a million megohm meter 111
3.1 Photograph of the pure and CdS doped ADP single crystals 115
3.2 Photograph of the pure and ZnS doped ADP single crystals 115
3.3 Indexed PXRD patterns of pure and CdS doped ADP crystals 117
3.4 Indexed PXRD patterns of pure and ZnS doped ADP crystals 117
3.5 FTIR spectra observed for Pure ADP, CADP-5 and ZADP-5
crystals 121
3.6 Variation of Vicker's hardness number with load for pure and
CdS doped ADP crystals 124
xiii
Figure
No. Title
Page
No.
3.7 Variation of Vicker's hardness number with load for pure and
ZnS doped ADP crystals 124
3.8 Plots of log P vs log d for Pure and CdS doped ADP crystals 125
3.9 Plots of log P vs log d for Pure and ZnS doped ADP crystals 125
3.10 TGA and DTA thermograms of Pure ADP crystal 128
3.11 TGA and DTA thermograms of CADP-5 crystal 128
3.12 TGA and DTA thermograms of ZADP-5 crystal 128
3.13 UV-Vis-NIR transmission spectra for pure and CdS doped
ADP crystals 130
3.14 UV-Vis-NIR transmission spectra for pure and ZnS doped
ADP crystals 130
3.15 Variation of dielectric constant with temperature for pure and
CdS doped ADP crystals along 'a' direction 136
3.16 Variation of dielectric constant with temperature for pure and
CdS doped ADP crystals along 'c' direction 136
3.17 Variation of dielectric constant with temperature for pure and
ZnS doped ADP crystals along 'a' direction 137
3.18 Variation of dielectric constant with temperature for pure and
ZnS doped ADP crystals along 'c' direction 137
3.19
Plots showing impurity concentration dependence of dielectric
constant for pure and CdS added ADP crystals along 'a'
direction
138
3.20
Plots showing impurity concentration dependence of dielectric
constant for pure and CdS added ADP crystals along 'c'
direction
138
3.21
Plots showing impurity concentration dependence of dielectric
constant for pure and ZnS added ADP crystals along 'a'
direction
139
xiv
Figure
No. Title
Page
No.
3.22
Plots showing impurity concentration dependence of dielectric
constant for pure and ZnS added ADP crystals along 'c'
direction
139
3.23 Variation of dielectric loss with temperature for pure and CdS
doped ADP crystals along 'a' direction 143
3.24 Variation of dielectric loss with temperature for pure and CdS
doped ADP crystals along 'c' direction 143
3.25 Variation of dielectric loss with temperature for pure and ZnS
doped ADP crystals along 'a' direction 144
3.26 Variation of dielectric loss with temperature for pure and ZnS
doped ADP crystals along 'c' direction 144
3.27 Plots showing impurity concentration dependence of dielectric
loss for pure and CdS added ADP crystals along 'a' direction 145
3.28 Plots showing impurity concentration dependence of dielectric
loss for pure and CdS added ADP crystals along 'c' direction 145
3.29 Plots showing impurity concentration dependence of dielectric
loss for pure and ZnS added ADP crystals along 'a' direction 146
3.30 Plots showing impurity concentration dependence of dielectric
loss for pure and ZnS added ADP crystals along 'c' direction 146
3.31 Variation of AC conductivity with temperature for pure and
CdS doped ADP crystals along 'a' direction 152
3.32 Variation of AC conductivity with temperature for pure and
CdS doped ADP crystals along 'c' direction 152
3.33 Variation of AC conductivity with temperature for pure and
ZnS doped ADP crystals along 'a' direction 153
3.34 Variation of AC conductivity with temperature for pure and
ZnS doped ADP crystals along 'c' direction 153
3.35
Plots showing impurity concentration dependence of AC
conductivity for pure and CdS added ADP crystals along 'a'
direction
154
xv
Figure
No. Title
Page
No.
3.36
Plots showing impurity concentration dependence of AC
conductivity for pure and CdS added ADP crystals along 'c'
direction
154
3.37
Plots showing impurity concentration dependence of AC
conductivity for pure and ZnS added ADP crystals along 'a'
direction
155
3.38
Plots showing impurity concentration dependence of AC
conductivity for pure and ZnS added ADP crystals along 'c'
direction
155
3.39 Variation of DC conductivity with temperature for pure and
CdS doped ADP crystals along 'a' direction 158
3.40 Variation of DC conductivity with temperature for pure and
CdS doped ADP crystals along 'c' direction 158
3.41 Variation of DC conductivity with temperature for pure and
ZnS doped ADP crystals along 'a' direction 159
3.42 Variation of DC conductivity with temperature for pure and
ZnS doped ADP crystals along 'c' direction 159
3.43
Plots showing impurity concentration dependence of DC
conductivity for pure and CdS added ADP crystals along 'a'
direction
160
3.44
Plots showing impurity concentration dependence of DC
conductivity for pure and CdS added ADP crystals along 'c'
direction
160
3.45
Plots showing impurity concentration dependence of DC
conductivity for pure and ZnS added ADP crystals along 'a'
direction
161
3.46
Plots showing impurity concentration dependence of DC
conductivity for pure and ZnS added ADP crystals along 'c'
direction
161
3.47 Plots of log σac versus 1000/T (K
-1) for Pure ADP crystal:
(a) along 'a' direction and (b) along 'c' direction 164
xvi
Figure
No. Title
Page
No.
3.48 Plots of log σac versus 1000/T (K
-1) for CADP-1 crystal:
(a) along 'a' direction and (b) along 'c' direction 164
3.49 Plots of log σac versus 1000/T (K
-1) for CADP-2 crystal:
(a) along 'a' direction and (b) along 'c' direction 164
3.50 Plots of log σac versus 1000/T (K
-1) for CADP-3 crystal:
(a) along 'a' direction and (b) along 'c' direction 165
3.51 Plots of log σac versus 1000/T (K
-1) for CADP-4 crystal:
(a) along 'a' direction and (b) along 'c' direction 165
3.52 Plots of log σac versus 1000/T (K
-1) for CADP-5 crystal:
(a) along 'a' direction and (b) along 'c' direction 165
3.53 Plots of log σac versus 1000/T (K
-1) for ZADP-1 crystal :
(a) along 'a' direction and (b) along 'c' direction 166
3.54 Plots of log σac versus 1000/T (K
-1) for ZADP-2 crystal :
(a) along 'a' direction and (b) along 'c' direction 166
3.55 Plots of log σac versus 1000/T (K
-1) for ZADP-3 crystal:
(a) along 'a' direction and (b) along 'c' direction 166
3.56 Plots of log σac versus 1000/T (K
-1) for ZADP-4 crystal:
(a) along 'a' direction and (b) along 'c' direction 167
3.57 Plots of log σac versus 1000/T (K
-1) for ZADP-5 crystal :
(a) along 'a' direction and (b) along 'c' direction 167
3.58 Plots of log σdc versus 1000/T (K
-1) for Pure ADP crystal:
(a) along 'a' direction and (b) along 'c' direction 167
3.59 Plots of log σdc versus 1000/T (K
-1) for CADP-1 crystal:
(a) along 'a' direction and (b) along 'c' direction 168
3.60 Plots of log σdc versus 1000/T (K
-1) for CADP-2 crystal :
(a) along 'a' direction and (b) along 'c' direction 168
3.61 Plots of log σdc versus 1000/T (K
-1) for CADP-3 crystal :
(a) along 'a' direction and (b) along 'c' direction 168
xvii
Figure
No. Title
Page
No.
3.62 Plots of log σdc versus 1000/T (K
-1) for CADP-4 crystal :
(a) along 'a' direction and (b) along 'c' direction 169
3.63 Plots of log σdc versus 1000/T (K
-1) for CADP-5 crystal :
(a) along 'a' direction and (b) along 'c' direction 169
3.64 Plots of log σdc versus 1000/T (K
-1) for ZADP-1 crystal :
(a) along 'a' direction and (b) along 'c' direction 169
3.65 Plots of log σdc versus 1000/T (K
-1) for ZADP-2 crystal :
(a) along 'a' direction and (b) along 'c' direction 170
3.66 Plots of log σdc versus 1000/T (K
-1) for ZADP-3 crystal :
(a) along 'a' direction and (b) along 'c' direction 170
3.67 Plots of log σdc versus 1000/T (K
-1) for ZADP-4 crystal :
(a) along 'a' direction and (b) along 'c' direction 171
3.68 Plots of log σdc versus 1000/T (K
-1) for ZADP-5 crystal :
(a) along 'a' direction and (b) along 'c' direction 171
xviii
CONTENTS
CHAPTER
NO. TITLE
PAGE
NO.
1. INTRODUCTION 1
1.1 Crystalline State 1
1.2 Natural and Artificial (Synthetic) Crystals 3
1.3 Crystal Growth and Its Importance 4
1.4 Significance of Single Crystals 6
1.5 Crystal Growth Technology 8
1.6 Methods of Crystal Growth 10
1.6.1 Growth from solid 11
1.6.2 Growth from vapour 13
1.6.3 Growth from liquid 13
1.7 Growth from Melt 14
1.7.1 Czochralski technique 14
1.7.2 Bridgeman – Stockbarger technique 15
1.7.3 Vernueil technique 15
1.7.4 Zone melting technique 16
1.7.5 Skull melting process 16
1.7.6 Shaped crystal growth technique 17
1.8 High Temperature Solution Growth (Flux Growth) 17
1.9 Hydrothermal Growth 18
1.10 Low Temperature Solution Growth 19
1.10.1 Criteria for growth 19
1.10.2 Metastable zone width 19
xix
CHAPTER
NO. TITLE
PAGE
NO.
1.10.3 Crystal-medium interface 20
1.10.4 Solvents 20
1.10.5 Impurities 21
1.10.6 Stirring 22
1.10.7 Growth temperature 22
1.10.8 Solubility and supersaturation 23
1.11 Classification of Low Temperature Solution Growth
Methods
25
1.11.1 Slow cooling method 25
1.11.2 Temperature gradient method 26
1.11.3 Gel method 26
1.11.4 SR method 27
1.11.5 Slow evaporation method 29
1.12 Nonlinear Optics and Crystalline Materials 31
1.13 ADP Single Crystals 34
1.14 Structure of ADP 35
1.15 Review of Studies on ADP Single Crystals 40
1.15.1 Growth techniques 40
1.15.2 Growth rate, structural properties and
phase transition
43
1.15.3 Electrical properties 55
1.15.4 Optical properties 57
1.15.5 Mechanical properties 60
1.16 Recent Developments in the Field of Crystal Growth 60
1.17 Present Work 66
xx
CHAPTER
NO. TITLE
PAGE
NO.
2. MATERIALS AND CHARACTERIZATION
TECHNIQUES
70
2.1 Materials Used 71
2.2 Preparation of II-VI Compound Nanoparticles
(Dopants)
72
2.2.1 Importance of II-VI compound nanoparticles 72
2.2.2 Applications of CdS and ZnS nanoparticles 73
2.2.3 Challenging problem 73
2.2.4 Synthesis of water soluble ethylene diamine
capped CdS and ZnS nanoparticles
75
2.2.5 Visible colour change 77
2.2.6 Solubility of as-prepared CdS and ZnS
nanoparticles
78
2.3 Growth of Sample Crystals 78
2.4 Characterization Techniques 80
2.5 X-ray Diffraction Technique 81
2.5.1 Powder X-ray diffraction analysis 82
2.5.2 Powder X-ray diffraction instrumentation 84
2.6 Atomic Absorption Spectroscopy 85
2.7 Fourier Transform Infrared (FTIR) Spectroscopic
Technique
88
2.8 Microhardness Measurement 93
2.8.1 Factors obstructing the motion of dislocations 96
2.8.2 Vicker's hardness test 98
2.9 Thermal Studies 99
2.9.1 Differential thermal analysis 101
xxi
CHAPTER
NO. TITLE
PAGE
NO.
2.9.2 Thermogravimetry 102
2.10 Ultraviolet-Visible-Near Infrared (UV-Vis-NIR)
Spectroscopic Technique
103
2.11 Second Harmonic Generation Test 105
2.12 Electrical Measurements 108
2.12.1 AC electrical (dielectric) measurements 108
2.12.2 DC conductivity measurements 112
3. RESULTS AND DISCUSSION 114
3.1 General Properties 114
3.2 Lattice Variation and Impurity Concentration 116
3.3 AAS Data 119
3.4 FTIR Spectra 120
3.5 Mechanical Properties 122
3.6 Thermal Properties 126
3.7 Optical Properties 127
3.7.1 UV-Vis-NIR spectra 127
3.7.2 SHG efficiencies 129
3.8 Electrical Properties 132
3.8.1 Dielectric constants 132
3.8.2 Dielectric losses 140
3.8.3 AC electrical conductivities 147
3.8.4 DC electrical conductivities 148
3.8.5 Activation energies 162
4. SUMMARY AND CONCLUSIONS 172