centro atomico bariloche and instituto balseiro comisio´n ... · m.e.simo´n, a.a.aligia and...

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arXiv:cond-mat/9707128v1 [cond-mat.supr-con] 11 Jul 1997 Optical properties of an effective one-band Hubbard model for the cuprates M.E.Sim´ on, A.A.Aligia and E.R.Gagliano Centro At´ omico Bariloche and Instituto Balseiro Comisi´ on Nacional de Energ´ ıa At´ omica 8400 S.C. de Bariloche, Argentina. (Received March 21, 2018) We study the Cu and O spectral density of states and the optical conductivity of CuO2 planes using an effective generalized one-band Hubbard model derived from the extended three-band Hubbard model. We solve exactly a square cluster of 10 unit cells and average the results over all possible boundary conditions, what leads to smooth functions of frequency. Upon doping, the Fermi energy jumps to Zhang-Rice states which are connected to the rest of the valence band ( in contrast to an isolated new band in the middle of the gap). The transfer of spectral weight depends on the parameters of the original three-band model not only through the one-band effective parameters but also through the relevant matrix elements. We discuss the evolution of the gap upon doping. The optical conductivity of the doped system shows a mid-infrared peak due to intraband transitions, a pseudogap and a high frequency part related to interband transitions. Its shape and integrated weight up to a given frequency ( including the Drude weight ) agree qualitatively with experiments in the cuprates for low to moderate doping levels, but significant deviations exist for doping x> 0.3. PACS numbers: 74.72.-h, 78.20.-e, 79.60.-i, 75.40.Mg I. INTRODUCTION In recent years, there has been much interest in the spectral and related electronic properties of cuprates su- perconductors and similar materials [1–31]. In spite of the considerable research effort, there are several issues which remain to be clarified. For example, photoemission experiments at optimal doping [1] show that electrons have a large Fermi surface of area (1 x) where x is the amount of hole doping, while at small doping it is ex- pected that the Fermi surface consists of four small hole pockets centered at (±π/2, ±π/2) of total area x. The evolution of the Fermi surface remains a tough problem [31]. There is a recent theoretical study on this subject [32]. Another related issue is the appearance and evolu- tion for x = 0 of states at energies which lie in the gap for x = 0. There are at least two physical pic- tures. On the basis of several measurements, and par- ticularly the change of sign of the Hall constant with x in La 2x Sr x CuO 4 , Sreedhar and Ganguly [2] proposed that the gap in the spectral density gradually closes with increasing x, and after the closing, the system has com- pleted its evolution from a Mott ( or better said ”charge- transfer” ) insulator to a band metal. As soon as doping begins the Fermi level jumps to the valence band. This jump is consistent with the measured x-ray absorption spectrum (XAS) [6,7]. Instead, from the optical conduc- tivity [3] and high-energy spectroscopies [5], it has been suggested that a new band of midgap states is formed, taking spectral weight from both, conduction and va- lence bands, and the Fermi level remains in the midgap band. A minimal shift of the Fermi level with doping has been observed by photoemission in La 2x Sr x CuO 4 [8] and in the electron doped Nd 2x Ce x CuO 4 [9], but not in Ba 2 Sr 2 Ca 1x Y x CuO 2 C 8 [10]. It might be possi- ble that the states in the middle of the gap are created by deep donor levels originated by the substitution of La +3 by Sr +2 ions. The resulting ”impurity-state model” is consistent with the experimental evidence in the oxide (Nd,Sr)CoO 3 [13]. The effect of this substitution has been discussed in Ref. [7]. However, inhomogeneities are usually not included in the theoretical treatments, and it seems necessary to generalize the Hubbard model to ex- plain the electronic structure of some non-stoichiometric oxides [13,14]. To discuss the validity of the translationally invari- ant three-band Hubbard model [33] or effective models derived from it [19,20,34–36] in the description of the cuprates, it is necessary to know precisely the spectral properties of these models. One of the most used and ef- fective ways to study these properties in two dimensions at zero temperature is the exact diagonalization of small clusters [17,19–22,24,29]. Among the different effective models, those similar to the t J one [22,24,29,34,36] have the smallest number of states per unit cell. How- ever, like the spin-fermion ( or Kondo-Heisenberg) model [19,20], their Hilbert space is too small to allow a de- scription of both, valence and conduction bands. In con- trast, the number of states per unit cell of the three-band model is so large that the largest exactly solved cluster contains only four unit-cells [17,18,23]. Thus, the most apropriate effective model to study the evolution of the gap seems to be the extended Hubbard one [35]. Nu- merical studies of the Hubbard model show a change of sign of the Hall constant as a function of doping, but it has not been related with a reconstruction of the spectral density [37–40]. The spectral properties of the Hubbard model have been calculated in periodic square clusters of 8,10 and 16 sites [21–23]. Without artificial broadening, 1

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Page 1: Centro Atomico Bariloche and Instituto Balseiro Comisio´n ... · M.E.Simo´n, A.A.Aligia and E.R.Gagliano Centro Atomico Bariloche and Instituto Balseiro Comisio´n Nacional de Energ´ıa

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Optical properties of an effective one-band Hubbard model for the cuprates

M.E.Simon, A.A.Aligia and E.R.GaglianoCentro Atomico Bariloche and Instituto Balseiro

Comision Nacional de Energıa Atomica

8400 S.C. de Bariloche, Argentina.

(Received March 21, 2018)

We study the Cu and O spectral density of states and the optical conductivity of CuO2 planes usingan effective generalized one-band Hubbard model derived from the extended three-band Hubbardmodel. We solve exactly a square cluster of 10 unit cells and average the results over all possibleboundary conditions, what leads to smooth functions of frequency. Upon doping, the Fermi energyjumps to Zhang-Rice states which are connected to the rest of the valence band ( in contrast toan isolated new band in the middle of the gap). The transfer of spectral weight depends on theparameters of the original three-band model not only through the one-band effective parameters butalso through the relevant matrix elements. We discuss the evolution of the gap upon doping. Theoptical conductivity of the doped system shows a mid-infrared peak due to intraband transitions,a pseudogap and a high frequency part related to interband transitions. Its shape and integratedweight up to a given frequency ( including the Drude weight ) agree qualitatively with experimentsin the cuprates for low to moderate doping levels, but significant deviations exist for doping x > 0.3.

PACS numbers: 74.72.-h, 78.20.-e, 79.60.-i, 75.40.Mg

I. INTRODUCTION

In recent years, there has been much interest in thespectral and related electronic properties of cuprates su-perconductors and similar materials [1–31]. In spite ofthe considerable research effort, there are several issueswhich remain to be clarified. For example, photoemissionexperiments at optimal doping [1] show that electronshave a large Fermi surface of area (1− x) where x is theamount of hole doping, while at small doping it is ex-pected that the Fermi surface consists of four small holepockets centered at (±π/2,±π/2) of total area x. Theevolution of the Fermi surface remains a tough problem[31]. There is a recent theoretical study on this subject[32].Another related issue is the appearance and evolu-

tion for x 6= 0 of states at energies which lie in thegap for x = 0. There are at least two physical pic-tures. On the basis of several measurements, and par-ticularly the change of sign of the Hall constant with xin La2−xSrxCuO4, Sreedhar and Ganguly [2] proposedthat the gap in the spectral density gradually closes withincreasing x, and after the closing, the system has com-pleted its evolution from a Mott ( or better said ”charge-transfer” ) insulator to a band metal. As soon as dopingbegins the Fermi level jumps to the valence band. Thisjump is consistent with the measured x-ray absorptionspectrum (XAS) [6,7]. Instead, from the optical conduc-tivity [3] and high-energy spectroscopies [5], it has beensuggested that a new band of midgap states is formed,taking spectral weight from both, conduction and va-lence bands, and the Fermi level remains in the midgapband. A minimal shift of the Fermi level with dopinghas been observed by photoemission in La2−xSrxCuO4

[8] and in the electron doped Nd2−xCexCuO4 [9], but

not in Ba2Sr2Ca1−xYxCuO2C8 [10]. It might be possi-ble that the states in the middle of the gap are created bydeep donor levels originated by the substitution of La+3

by Sr+2 ions. The resulting ”impurity-state model” isconsistent with the experimental evidence in the oxide(Nd,Sr)CoO3 [13]. The effect of this substitution hasbeen discussed in Ref. [7]. However, inhomogeneities areusually not included in the theoretical treatments, and itseems necessary to generalize the Hubbard model to ex-plain the electronic structure of some non-stoichiometricoxides [13,14].To discuss the validity of the translationally invari-

ant three-band Hubbard model [33] or effective modelsderived from it [19,20,34–36] in the description of thecuprates, it is necessary to know precisely the spectralproperties of these models. One of the most used and ef-fective ways to study these properties in two dimensionsat zero temperature is the exact diagonalization of smallclusters [17,19–22,24,29]. Among the different effectivemodels, those similar to the t − J one [22,24,29,34,36]have the smallest number of states per unit cell. How-ever, like the spin-fermion ( or Kondo-Heisenberg) model[19,20], their Hilbert space is too small to allow a de-scription of both, valence and conduction bands. In con-trast, the number of states per unit cell of the three-bandmodel is so large that the largest exactly solved clustercontains only four unit-cells [17,18,23]. Thus, the mostapropriate effective model to study the evolution of thegap seems to be the extended Hubbard one [35]. Nu-merical studies of the Hubbard model show a change ofsign of the Hall constant as a function of doping, but ithas not been related with a reconstruction of the spectraldensity [37–40]. The spectral properties of the Hubbardmodel have been calculated in periodic square clusters of8,10 and 16 sites [21–23]. Without artificial broadening,

1

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the result of these calculations is given by a set of deltafunctions at different frequencies ( see for example Fig.11of Ref [22]), from which it is not possible to distinguishif in the thermodynamic limit there is one, two or moregaps in the spectral density of states. Also the Drudeweight shows important finite-size effects, being negativenear half-filling.In this work we solve exactly the effective one-band

extended Hubbard hamiltonian in a square cluster of 10unit cells and average over all possible boundary condi-tions [41]. This technique has been also used by Poilblancto study the optical conductivity of the t− J model [24]and by Xiang and Wheatly [42] to calculate the disper-sion relation of one hole in a generalized t−J model, ob-taining good agreement with results of the self-consistentBorn approximation and experiments in Sr2CuO2Cl2. Toour knowledge this approach has not been applied tothe spectral properties of Hubbard or extended Hubbardclusters. It allows us to obtain continuous spectral densi-ties and optical conductivities and according to our stud-ies in small rings ( see section III ), the convergence tothe thermodynamic limit is faster.It must also be pointed out that the spectral proper-

ties of the Hubbard model derived from the numericalmethods mentioned above, as well as analytical studiesof the change in the spectral weights with doping [30]do not directly correspond to the cuprates as describedby the original three-band Hubbard model. To calculateany property of this model using an effective Hamilto-nian, one should transform the corresponding operatorsfrom the three-band to the effective Hamiltonian. Thishas been done for the spin-fermion [19], Hubbard [44] andt− t′− t′′−J [36] as effective models for the cuprates. Inparticular, Feiner explained the electron-hole asymmetryin the spectral weight in the cuprates ( which is absent inthe ”isolated” Hubbard model) [44]. Here we use and dis-cuss the transformed operators for spectral density andoptical conductivity.In section II, we briefly review the extended one-band

Hubbard model as an effective model for cuprate super-conductors, and construct the relevant operators. In sec-tion III, we discuss the numerical techniques and themethod of integrating over arbitrary boundary condi-tions. In section IV, we present the results for the spec-tral density, while section V contains the results for theoptical conductivity, Drude weight and related quanti-ties. The conclusions are presented in Section VI.

II. THE EFFECTIVE EXTENDED ONE-BAND

HUBBARD MODEL AND TRANSFORMED

OPERATORS

Experimental evidence about the symmetry of holes inhigh-Tc superconductors [5,45,46], as well as constrained-density-functional calculations [47,48], support the ap-

propriateness of the three-band Hubbard model [33] forthe description of these systems. The Hamiltonian is:

H3b = ∆∑

p†jσpjσ + tpd∑

iδσ

(p†i+δσdiσ + h.c.)− (1)

tpp∑

jγσ

p†j+γσpjσ + Upd

iδσσ′

ndiσn

pi+δσ′ +

Ud

i

ndi↑n

di↓ + Up

j

npj↑n

pj↓

where d†iσ (p†jσ) creates a hole in the dx2−y2 ( pσ ) or-bital at site i ( j ) with spin σ, i + δ ( j + γ ) labelthe four O atoms nearest-neighbors to Cu (O) site i (j ). The phases of half the d and p orbitals have beenmodified by a factor (-1) in order to have tpd > 0 andtpp > 0 independently of the direction. While other Cuand O orbitals should be included to explain Raman ex-periments [49,50], these additional states affect neitherlow-energy spectral properties (below the bottom of thepπ band [50] ) nor the validity of the one-band effectivemodel H1b [50].The transformation of the low-energy part of H3b to

the effective model H1b can be summarized in four steps[34,35,50,51]: (i) change of basis of the O orbitals pxj , p

yj

to orthogonal Wannier functions αi, γi centered at eachCu site i, with symmetries b1g ( the same as the dx2−y2

orbital ) and a1g respectively; (ii) exact solution of thecell Hamiltonian Hi ( the terms of H3b which containonly operators acting on cell i ); (iii) mapping the low-energy states |m〉 of H3b into corresponding ones |m〉 ofthe Hilbert space of the one band model (|m〉 ↔ |m〉); (iv) transform the operators Hi and H3b −

iHi tothe new basis |m〉. A transformed operator O can beexpressed in terms of the matrix elements of the originaloperator O as:

O =∑

n,m

〈n|O|m〉|n〉〈m| (2)

Finally, the effect of states of H3b which do not have cor-responding ones in H1b can be included as perturbativecorrections [35], but we will not do it here. In Fourierspace, the pσ orbitals are related with the O Wannierfunctions by:

pxkσ = βk(cos (

kxa

2)αkσ − cos (

kya

2) γkσ) (3)

pykσ = βk(cos (

kya

2)αkσ + cos (

kxa

2) γkσ)

with βk = (1 + 1

2cos (kxa) +

1

2cos (kya))

− 12 . The

eigenstates ofHi retained in the mapping procedure are (in addition to the vacuum at site i ), the lowest one-holedoublet |iσ〉 and the lowest two-hole doublet |i2〉. Theycan be expressed as:

2

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|i2〉 = [A1√2(d†i↑α

†i↓ − d†i↓α

†i↑)−A2α

†i↑α

†i↓ −A3d

†i↑d

†i↓]|0〉 (4)

|iσ〉 = [B1d†iσ −B2α

†iσ]|0〉

These states are mapped into those of the one-bandmodel by the correspondence |iσ〉 ↔ c†iσ|0〉, |i2〉 ↔c†i↑c

†i↓|0〉. This assignment and Eq.(2) applied to H3b

leads to the effective one-band generalized HubbardHamiltonian [35], with occupation dependent nearest-neighbor hopping and repulsion ( interactions and hop-pings at larger distances are neglected for simplicity ):

H1b = E1

niσ + U∑

i

ni↑ni↓ +∑

<ij>σ

c†jσciσtAA(1− ni,σ)(1 − nj,σ) + tAB[ni,σ(1− nj,σ) + nj,σ(1− ni,σ)] + (5)

tBBni,σnj,σ+ h.c.+∑

<ij>σσ′

V11(1− ni,σ)(1− nj,σ′) + V22ni,σnj,σ′ +

V12[(1− ni,σ)nj,σ′ + ni,σ(1 − nj,σ′)]ni,σnj,σ′

Several particular cases of this model have been widelystudied [52–58]. For tAA + tBB = 2tAB and Vij = 0, themodel is shown to lead to superconductivity for smallU and adequate doping [52], particularly in one dimen-sion [53–55]. For Vij = tAB = 0, the model has beenexactly solved in one dimension [56]. For tAB = 0,V22 = V21 = V11 and half-filling, the exact ground statehas been found in a wide range of parameters for arbi-trary lattices in arbitrary dimension, and the phase di-agram separating metallic, Mott insulating and charge-density waves regions has been established [57].The spectral properties in two dimensions have been

studied numerically in the charge-density-wave ( large Vij

) regime [58], and for Vij = 0 and small tAB at half-filling[59]. The model has been also used recently to study theregions of phase separation and valence instabilities ofthe original three-band model [35]. Typical values of theparameters of H3b and H1b are given in tables I and IIrespectively.At zero temperature, the Cu and O spectral densities

are defined by:

ρO(ω) =1

L

k,n

|〈n|Ok|g〉|2δ(ω + Eg − En) (6)

where |n〉,En are the eigenstates and energies of H1b, |g〉labels the ground state for a given number of particles Nand L is the number of unit cells in the system. For elec-tron spectral densities of Cu or one of both O atoms inthe unit cell ( measured by inverse photoemission ), Ok isthe operator in the representation of H1b of dk or px,yk re-spectively. For hole spectral densities ( corresponding tophotoemission ) the corresponding hermitian conjugateoperators should be taken. In real space using Eq.(2)one obtains:

di = D1ciσ(1 − niσ) +D2ciσniσ (7)

αi = P1ciσ(1− niσ) + P2ciσniσ

where

D1 = 〈i0|diσ|iσ〉 = B1 (8)

D2 = 〈iσ|diσ|i2〉 = (A1B2√

2+A3B1)

P1 = 〈i0|αiσ|iσ〉 = −B2

P2 = 〈iσ|αiσ|i2〉 = −(A1B1√

2+A2B2)

Transforming Fourier and using Eq.(3), the operators en-tering Eq.(6) are defined. As will be discussed in sectionIV, the asymmetry of Eq.(7) and also the HamiltonianEq.(5) under electron-hole transformation leads to a dif-ferent behavior of the spectral densities under electron orhole doping. This difference is apparent in the cupratesand in the three-band Hubbard model results, but it isabsent in the ordinary one-band Hubbard model [18,44].The optical conductivity can be written as [16,17]

σ(ω) = 2πDδ(ω) + σreg(ω) (9)

where

σreg(ω) =π

V ω

n6=g

|〈n|jx|g〉|2δ(En − Eg − ω) (10)

V is the volume of the system, jx the x component of thecurrent operator. The Drude weight D can be calculatedin two ways: either using the mean value of the kineticenergy in a given direction 〈Tx〉:

D = (ea

~)2〈−Tx〉2V

− 1

V

n6=g

|〈n|jx|g〉|2En − Eg

(11)

or from the second derivative of the energy with respectto the vector potential A in a system with periodic (or arbitrary as described in the next section ) boundaryconditions

D =c2

2V

d2E(A)

dA2

A=0

(12)

The current operator can be derived in a standard way,from dH/dA, when each hopping term c†iσcjσ is multi-plied by a phase factor Exp[ieA(xi−xj)/(c~)] [16,17]. Inthe case of the effective Hamiltonian Eq.(5), the current

3

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can be divided in three terms proportional to the threedifferent types of hopping terms:

jx = jAA + jAB + jBB (13)

with

jAA(r) =iae

~tAA

σ

(c†rσcr+xσ − c†r+xσcrσ)(1 − nr,σ)(1 − nr+x,σ) (14)

jAB(r) =iae

~tAB

σ

(c†rσcr+xσ − c†r+xσcrσ)[(1 − nr,σ)nr+x,σ + nr,σ(1− nr+x,σ)]

jBB(r) =iae

~tBB

σ

(c†rσcr+xσ − c†r+xσcrσ)nr,σnr+x,σ

An alternative derivation of the current operator forthe effective one-band model is to obtain first the currentoperator of the multiband model [17], then project theresult into the low-energy subspace and map it onto theone-band representation. Both derivations lead to identi-cal results if tpp = 0. For realistic values of tpp, there aresmall differences between the resulting coefficients enter-ing the current jAA, jAB and jBB. For example whilefor the set 2 of parameters of H3b (see table I ) we obtaintAA = tAB = −0.38, tBB = −0.33, in the second deriva-tion these values should be replaced by -0.32, -0.35 and-0.36 in the respective currents. This difference is prob-ably due to the different way in which excited ( mainlylocal triplet ) states are taken into account in lowest or-der in both procedures when tpp 6= 0 [60,36]. In this workwe use Eq.(14).

III. NUMERICAL METHODS AND AVERAGE

OVER BOUNDARY CONDITIONS

We have evaluated Eqs.(6), (10) and (11) using thenow standard continued-fraction expansion of these equa-tions with the Lanczos method [62], in a square clusterof 10 unit cells, integrating the result over the differentboundary conditions [41,24]. Particular boundary condi-tions are specified by two phases (φ1, φ2), 0 ≤ φi < 2πin the following way: an infinite square lattice is di-vided into square 10-site clusters, and the sites whichare at distances nV1 + mV2 with n,m integers andV1 = (3, 1), V2 = (−1, 3) are considered equiva-lent ( see Fig.1). After choosing a particular 10-sitecluster, each ”time” the hopping term makes a partic-ular jump out of the cluster, it is mapped back intothe cluster through a translation in one of the vectors−V1,V1,−V2, or V2 and the wave function is mul-tiplied by eiφ1 , e−iφ1 , eiφ2 or e−iφ2 respectively. When(φ1, φ2) = (0, 0) this is equivalent to the usual periodicboundary conditions. It is easy to see that when we im-pose the wave function for N particles to be an irre-ducible representation of the group of translations of the

infinite square lattice, the allowed total wave vectors Kshould satisfy

Nφ1 + 2n1π = K ·V1 (15)

Nφ2 + 2n2π = K ·V2

where n1, n2 are integers. Solving forKx,Ky one obtains:

Kx =N

10(3φ1 − φ2)−

2π(n2 − 3n1)

10(16)

Ky =N

10(φ1 + 3φ2) +

2π(3n2 + n1)

10

When (φ1, φ2) = (0, 0), varying the integers n1, n2,Eqs.(16) give the 10 inequivalent wave vectors allowed byperiodic boundary conditions. When (φ1, φ2) is allowedto vary continuously the whole reciprocal space can beswept. This allows us to obtain more information fromthe finite-size cluster calculations. Also, while the spec-tral densities and optical conductivities being calculatedare given by a sum of delta functions for each (φ1, φ2) (Eqs.(6) and (9)), integrating the result over (φ1, φ2) leadsto continuous functions. In practice we have replaced theintegral by an average over a square mesh of up to 8x8points ( up to 34 non-equivalent by symmetry for the op-tical conductivity) in φ1, φ2 space until a fairly smoothfunction was obtained.However, the procedure described above has some

shortcomings when applied to the optical conductivity.For general boundary conditions there is a spontaneous

current in the ground state, invalidating the derivationof Eqs.(9) to (12) [16,17]. (Such a current can not existin the thermodynamic limit, even if it were allowed bysymmetry [63,64]). In finite systems, this current is zerofor periodic boundary conditions at ”closed-shell” fillings,(including half-filling in our cluster), and for half-fillingand any boundary conditions in the U → ∞ limit (asin the t − J model [24] ), since in this limit the chargedynamics is suppressed. Our point of view is that theaverage of Eqs.(10) and (11) over boundary conditionsin a finite system, is an approximation to the correctexpression in the thermodynamic limit, which convergesfaster with system size than the result of Eqs.(10) and(11) or (12) for fixed boundary conditions. Since wehave not done finite-size scaling in two dimensions, we

4

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can not prove this statement. However, it is supportedby our one-dimensional check summarized below. Fur-thermore, as we shall see in section V, the results us-ing the averaging procedure look reasonable, while theDrude weight obtained in larger systems using periodicboundary conditions show unphysical negative values athalf-filling [22,27]. Previous calculations of the opticalconductivity of the t − J model using twisted boundaryconditions also support our procedure [24].We have checked the method of averaging over bound-

ary conditions applying it to the optical conductivityσ(ω) of one-dimensional Hubbard rings, for which finite-size scaling can be done, and some exact results, like thecharge gap, are available [43]. The results for U/t = 4, 6and 8 and several system sizes L are represented inFigs.2-4 respectively. A funny feature of these curvesis the presence of oscillations in σ(ω). A comparison ofthe result for rings of different sizes shows that this is afinite-size effect. Calculations using spin-wave theory inthe strong coupling limit give a smooth σ(ω) [26]. For-tunately no signs of these oscillations are present in thetwo-dimensional case. By comparison, the strong cou-pling limit of the Hubbard model, and the t − J modelwith one hole in systems as large as 19 sites with periodicboundary conditions shows a few delta functions [26].The presence of a peak at zero frequency is a con-

sequence of the already discussed spontaneous currentin the ground state for general boundary conditions.Clearly, this is also a finite-size effect and the height ofthe peak decreases with system size and also with in-creasing U/t. Thus, we have suppressed this peak in thetwo-dimensional results of section V.We have also noticed that the gap in σ(ω) converges

much faster to the thermodynamic limit Eg than the cor-responding result using fixed boundary conditions. In ta-ble III, we compare the exact gap, given by the integral[43];

Eg

t=

16t

U

∫ ∞

1

y2 − 1

sinh(2πtyU

)dy (17)

against its value ( taken as the position of the lowestfrequency peak in the spectra of Figs. 2-4 ) for a ringof 8 sites after averaging over boundary conditions andat fixed antiperiodic boundary condition. Clearly, theaveraging procedure speeds up the convergence towardthe L∞ limit.

IV. THE SPECTRAL DENSITIES

In Fig.5, we show the Cu and O spectral densities ρ(ω)in the hole representation ( photoemission and inversephotoemission correspond to ω > ǫF and ω < ǫF respec-tively, where ǫF is the Fermi energy ) for several dopinglevels and the set of parameters 1 ( see Tables I and II

). These spectral densities have been calculated as de-scribed in section III, using Eq.(6) with Ok replaced by

d†k, px†k for Cu and O photoemission, and by dk, p

xk for

inverse photoemission. The result for O has been multi-plied by a factor 2 to represent the total contribution ofboth 2pσ orbitals of the unit cell. Also shown in Fig.5 arethe extended Hubbard spectral densities correspondingto the operators c†k(ω > ǫF ) and ck(ω < ǫF ). Note thatin constrast to the usual Hubbard model, the extendedHubbard spectral densities are not symmetric under hole(x > 0) or electron (x < 0) doping. This is due mainlyto the fact that tAA 6= tBB. However, the asymmetryof the Cu and O spectral densities is much stronger. Inagreement with experiment, for hole doping, the inversephotoemission spectrum near ǫF shows a larger contri-bution of O states than Cu d states, while for electrondoping, the photoemission spectrum near the Fermi levelis dominated by Cu states.A pseudogap in the spectral densities persists with

doping and allows to separate the electronic states in twobands at lower and higher energies than this pseudogap.The lower band corresponds to states with low doubleoccupancy and therefore, the spectral densities are dom-inated by the contribution proportional to ciσ(1 − niσ)in Eq.(7); thus the Cu and O spectral densities in thelower band are, as a first approximation proportional tothe respective coefficients( B1 and B2, see Eq.(8) ) in theone-particle ground state of the cell. However, the statesof the lower band contain some admixture of double oc-cupied states, and this introduces an energy dependenceof the relative weight of Cu and O states. The states oflower energy (ω ∼ −1) have a larger Cu content thanthose of the rest of the lower band. Similarly, as dis-cussed previously by Feiner [44], the Cu and O contentsof the upper band are mainly determined by D2 and P2

respectively ( see Eq.(8)), which depend on the structureof the Zhang-Rice singlet |i2〉 and the ground state of thecell with one hole |iσ〉 (see Eq.(4) ).From Eq.(6) applied to the Hubbard operators ck and

c†k, it is easy to obtain the total inverse photoemissionN− and photoemission N+ spectral weight:

N− =

∫ ǫF

−∞

ρc(ω)dω =< ni↑ > + < ni↓ >= 1 + x (18)

N+ =

∫ ∞

ǫF

ρc+(ω)dω = 2− < ni↑ > − < ni↓ >= 1− x

These sum rules are the same as those corresponding tothe usual Hubbard model. However, using Eqs.(6) and(7) the following sum rules for the Cu orbital dx2−y2 and”antibonding” O Wannier function α are obtained:

N−d = 〈nd↑ + nd↓〉 = (1 + x)D2

1 + 2d(D22 −D2

1) (19)

N+

d = 2(d− x)D21 + (1 + x− 2d)D2

2

N−p = 〈nα↑ + nα↓〉 = (1 + x)P 2

1 + 2d(P 22 − P 2

1 )

N+p = 2(d− x)P 2

1 + (1 + x− 2d)P 22

5

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where d =< ni↑ni↓ >. Adding the four functions, thetotal spectral weight becomes:

Nt = (1 + x)(1 +D22 + P 2

2 )− 2x (20)

Since D22+P 2

2 < 1, then Nt < 2. The rest of the spectralweight has been projected out of the low-energy effectiveextended Hubbard model and it is contained at higherenergies. The spectral weights given by Eqs.(19) as afunction of doping are represented in Fig.6 for a typicalset of parameters of the three-band model. In Fig.7, weshow the coefficients Pi , Di of the effective operators (Eq.(8) ) as a function of the three-band model parameter∆. We also show the function [1− (D2

2+P 22 )], related by

Eq.(20) to the amount of spectral weight projected outof the effective low-energy Hamiltonian. From the slopesof N−

d and N−p as a function of doping ( Fig.6 ) one

realizes that when doping the stoichiometric compoundwith electrons, the latter occupy mainly Cu states, whilefor hole doping, holes occupy mainly O states, and for theparameters of Fig.6, part of the Cu holes are transferredto O holes. This is a well known effect of the Cu-Orepulsion Upd [35].From the above discussion, it is clear that the main fea-

tures ( peaks and valleys) of the Cu and O spectral den-sities are present in the corresponding extended Hubbardresult ( obtained with the ck and c†k operators ), and as afirst approximation, the former can be obtained from thelatter modifying the spectral weights of the lower and up-per Hubbard bands with the coefficients given by Eqs.(8)and represented in Fig.7. Thus in the following we discussthe general properties of the extended Hubbard spectraldensity ( independently of the mapping procedure ) andthe spectral weight of both extended Hubbard bands.In Fig.8 we show the evolution with hole doping of the

spectral density of states of the extended Hubbard model.As discussed previously in the case of the ordinary Hub-bard model [22], after doping, states appear in the gap ofthe stoichiometric compound and the Fermi level jumpsto the upper Hubbard band. According to our results,these states are distributed evenly inside the gap andthere is not an impurity band at a defined energy. Also,the pseudogap persits for all dopings, and both bandsevolve smoothly with doping, with a noticeable transferof spectral weight from the lower to the upper band. InFig.9, we show the same results for the set of parameters3 of Tables I and II, for which the ratio of the on-siteCoulomb repulsion to hopping parameters is larger. Inthis case, the weight of the states which appear in thegap after doping is much smaller, and also the amountof spectral weight transfer between the bands is smaller.Note also and by contrast to the usual Hubbard modelthe strong asymmetry of ρ(ω) at x = 0 due to tAA 6= tBB.The transfer of spectral weight in the Hubbard model

has been discussed previously [7,30] and is important inthe analysis of x-ray absorption spectra in the cuprates

[6,7]. In the strong-coupling limit ( large U ), or in theHubbard III approximation, a static spectral weight of 2xis easily obtained ( 1− x states lie in the upper Hubbardband). However, as the hopping increases, a positivedynamical contribution to the spectral weight becomesimportant. In Fig.10 we show this dynamical contribu-tion for the extended Hubbard model and the three setsof parameters of Table II. It is apparent that for realisticparameters for the cuprates, the dynamical contributionis very important, and as could be seen comparing Figs.8 and 9, it is more important for smaller ratios U/tm,where tm = (tAA+2tAB+ tBB)/4 is the average effectivehopping.

V. THE OPTICAL CONDUCTIVITY

For the evaluation of Eqs.(10) and (11), we have takenthe distance between planes d⊥ = 6.64A, correspondingto La2CuO4. Thus, the Drude weight D and the regularpart of the optical conductivity σreg(ω) are proportionalto the constant 2e2/(~d⊥) = 3.7 × 103Ω−1cm−1. Theresulting Drude weight and average value of the kineticenergy as a function of hole doping are represented inFig.11 for the choice of parameters 3 of Table II. The cor-responding results for the optical conductivity are shownin Fig.12. The average over all boundary conditions hasbeen replaced by a discrete sum over a square mesh of8x8 points (φ1, φ2) ( 34 non-equivalent by symmetry ).For more than 16 points the results are practically inde-pendent on the number of different boundary conditionstaken.For the semiconducting system (x = 0), there is a spu-

rious peak at ω ∼ 0.4. This is a finite-size effect relatedwith the fact discussed in section III, that the groundstate for general boundary conditions carry a current forfinite U . The peak corresponds to transitions to excitedstates which differ from the ground state mainly in thespin arrangement. For realistic and large U the magni-tude of the spurious peak is small. In Fig.13, we show theoptical conductivity for a smaller value of the effective Uafter averaging over 32 (φ1, φ2) points ( 18 non-equivalentby symmetry). The magnitude of the spurious peak in-creases, but all the other features are very similar be-tween them, and qualitatively similar to previous resultsobtained in periodic 4x4 clusters [21]. However, our pro-cedure of averaging (Eq.(11) ) over boundary conditionsleads to more reasonable ( small and positive ) valuesof the Drude weight for the insulating system: 5 × 10−5

and 3× 10−3Ω−1cm−1 for the set 3 and 2 of parametersrespectively.For x ≤ 0.2, the results are in semiqualitative agree-

ment with experiments [3,4]. Excluding the spuriouspeak near 0.4, the optical conductivity of the insulat-ing compound shows a gap of ∼ 2eV and a character-istic shape at larger energies. Moreover, if the scale

6

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of energies is modified by a ∼ 3/4, the main featuresof Fig.13 for x = 0 coincide with the observed spec-tral dependence of the persistent photoconductivity inYBa2Cu3O6.38 [12]. As the system is doped the spec-tral intensity above ∼ 2eV decreases and at the sametime, a mid-infrared peak appears. Although this low-frequency peak has been discussed before, its nature hasnot been clarified yet. Recently, an explanation based onthe string picture of the t− J model has been proposed[29]. In order to shed light on the origin of the differentcontributions to the optical conductivity, we have sepa-rated the contributions of the three currents, jAA, jBB

and jAB, and compared them with the spectral density,as shown in Fig.14. For hole-doped systems, the contri-bution of jAA is negligible. From the analysis of Fig.14,we conclude that the optical conductivity at energies ofthe order of the gap and above corresponds to transitionsbetween the lower and upper extended Hubbard bands,originated by tAB ( which corresponds to a hopping be-tween two nearest-neighbor singly-occupied sites ). In-stead, the mid-infrared peak corresponds to one-particleexcitations inside the upper Hubbard band ( from belowto above the Fermi level ), originated by tBB or in otherwords ( in agreement with Ref. [29] ) to movements ofthe added holes without changing the amount of doublyoccupied sites. The difference between the total opticalconductivity and the contributions of jAB and jBB rep-resented in Fig.14 is mainly due to cross terms involvingboth currents.In Fig.15 we show the frequency dependent effective

number of carriers defined by

Nef (ω) =2m0V

πe2N

∫ ω

0

σ(ω′)dω′, (21)

for the two sets of parameter used before in this sec-tion. In order to compare with experiment, we took thelattice parameter of the CuO2 planes a = 3.78A, whichcorresponds to La2CuO4. As well as the results shownin Figs. 12 and 13, the agreement with experiment isgood for x ≤ 0.2. Experimentally, for x ∼ 0.3 thereseems to be an abrupt change of regime to an uncorre-lated metal, with the Drude peak as the only significantfeature of the optical conductivity. Instead, our resultsdo not show such a transition, but only a smooth evolu-tion. Possible reasons of this discrepancy are discussedin the next section.

VI. SUMMARY AND DISCUSSION

Using an effective extended Hubbard model for thecuprates, we have calculated the Cu and O spectral den-sity and optical conductivity in a square cluster of 10unit cells, averaging over all possible boundary condi-tions. To our knowledge, this is the larger cluster for

which Cu and O spectral densities are calculated usingthe Lanczos method. The averaging procedure allows toobtain continuous spectral densities and optical conduc-tivity, and leads to more reasonable values of the Drudeweight near stoichiometry.We obtain that the states which appear in the gap after

doping are distributed evenly inside it, without buildinga new band of midgap or impurity like states. We alsoobtain that a marked pseudogap persists for all dopings,separating two bands. When the insulator is doped, theFermi level jumps into the band which corresponds ac-cording to the sign of the doping. As doping proceeds,spectral weight is transferred to the band which containsthe Fermi level from the other one. An analysis of thedifferent components of the current operator allows us toconclude that the mid-infrared peak in the optical con-ductivity observed in doped systems is related to intra-band transitions across the Fermi level. The shape ofthe Cu and O spectral densities is consistent with thefact that for hole doping, holes enter mainly O pσ states,while Cu states are occupied on electron doping.In general, these results are in agreement with experi-

ment. There is however a disagreement with some opticalexperiments [8,9] which indicated almost no shift of theFermi level with doping, as mentioned in section I. Weshould mention that, as discussed by Hybertsen et al.

[7] the substitution of La+3 by Sr+2 creates a potentialwhich might localize the doped holes by small doping,creating an impurity band of acceptor levels like in or-dinary semiconductors. To include these effects it wouldbe necessary to generalize the three-band Hubbard modeland the effective models derived from it.We do not obtain a deep reconstruction of the elec-

tronic structure around hole doping for x ∼ 0.3 as con-ductivity [3], Hall and other experiments [2] suggest. Aclosing of the Mott-Hubbard gap was expected for sim-ilar dopings [2]. This closing in fact can occur in thethree-band Hubbard model and the effective extendedone band model for Upd ∼ 3 − 4. For these large valuesof Upd the effective U of the one band model decreaseswith doping and a large transfer of holes from Cu to Otakes place [35]. However, these values of Upd are toolarge compared to the most accepted ones. For realisticparameters of the three-band model, the effective modelparameters are independent of doping [35]. This doesnot exclude the possibility that the three-band parame-ters change near x ∼ 0.3, as a consequence of screeningcaused by the added holes, for example. Nevertheless,the fact that there are always two bands as a functionof doping is in agreement with x-ray absorption experi-ments in La2−xSrxCuO4 [6,7].Due to the small size of the cluster, we have looked

neither for the presence of a Kondo-like peak near theFermi energy [15], nor the effects of excitons in the opti-cal conductivity, which are present in the effective modelfor realistic and large Vij [50]. A signal of the presence

7

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of these excitons is a smaller gap in the optical conduc-tivity than in the spectral density. For example, for zerohoppings, it is easy to see that the gap in the spectraldensity is given by

Egap = U + 8(V12 − V11) (22)

However, if the hole and doubly occupied sites are neareach other, the excitation energy is 2V12 − V11 smaller.We conclude that for the most interesting doping lev-

els and the most accepted values of the parameters ofthe three-band model, the general features of the spec-tral properties of this model and of the cuprates, canbe described well using an effective extended one-bandHubbard model.

VII. ACKNOWLEDGEMENTS

We acknowledge useful conversations with J. Loren-zana. M.E.S. and E.R.G. are supported by CONICET,Argentina. A.A.A. is partially supported by CONICET,Argentina.

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FIGURE 1:Scheme of the supercell ( cluster ) containing 10 unitcells used in our calculations. The vectors V1 and V2

generate the whole lattice by succesive translations ofthe supercell.

FIGURE 2:Average optical conductivity as a function of frequencyfor Hubbard rings of different length and U/t = 4.

FIGURE 3:Same as Fig.2, for U/t = 6.

FIGURE 4:Same as Fig.2, for U/t = 8.

FIGURE 5:Inverse photoemission (ω < ǫF ) and photoemission (ω >ǫF ) hole spectral densities for Cu ( dashed line), O (full line ) and Hubbard operator ( dotted-dash line ), fordifferent hole dopings x. The vertical line indicates theposition of the Fermi level ǫF . Parameters are given bythe set 1 of table I. The average over boundary conditionshave been replaced by a discrete sum over 4x4 (φ1, φ2)points ( 6 independent points).

FIGURE 6:Total photoemission (N+) and inverse photoemission(N−) spectral weight for Cu ( Nd ) and O (Np) as afunction of hole doping. Parameters are Ud = 9,∆ =3,Upd = 1,tpp = 0.5,Up = 4.

FIGURE 7:Parameters which define the effective low-energy Cu andO operators according to Eq.(8) as a function of ∆. Alsoshown is 1 − D2

2 − P 22 , which is related with the high-

energy spectral weight projected out of the low-energyeffective Hamiltonian ( see Eq.(20)). Other parametersas in Fig.6.

FIGURE 8:Extended Hubbard inverse photoemission (ω < ǫF ) andphotoemission (ω > ǫF ) hole spectral densities for dif-ferent hole dopings x. The vertical line indicates theposition of the Fermi level ǫF . Parameters are given bythe set 1 of table II.

FIGURE 9:Same as Fig.8 for the set 3 of table II.

FIGURE 10:Total amount of occupied hole states in the upper bandW minus two times the hole doping x, as a function ofx for the three sets of parameters of Table I and II. ForU → ∞, W − 2x = 0.

FIGURE 11:Drude weight and average kinetic energy of the effectivemodel Eq.(5) as a function of doping. Parameters aregiven by the set 3 of table II.

FIGURE 12:Optical conductivity for different doping levels and theset 3 of parameters of table II. The delta function con-tribution at ω = 0 has been replaced by a Lorentzian ofwith 0.01 to facilitate the comparison with experiment.

FIGURE 13:Same as Fig.12 for the set 2.

FIGURE 14:Bottom: spectral densities of Imag << ji|ji >> ( con-tributions to the optical conductivity ) of the partial cur-rents jAB, jBB and the total result ( see Eqs.(10) and(13) ) for x = 0.2 and the set 2 of parameters of TableII. Top: corresponding hole spectral density. The arrowsindicate the transitions which give rise to the differentcontributions to the optical conductivity.

FIGURE 15:Effective number of carriers defined by Eq.(21) as a func-tion of frequency for different doping levels and the setsof parameters 3 and 2 of Table II.

10

Page 11: Centro Atomico Bariloche and Instituto Balseiro Comisio´n ... · M.E.Simo´n, A.A.Aligia and E.R.Gagliano Centro Atomico Bariloche and Instituto Balseiro Comisio´n Nacional de Energ´ıa

TABLESTABLE I : Different sets of parameters of the three-bandHubbard model H3b ( Eq.1) in units of tpd.

Set ∆ Ud Upd tpp Up

1 2.0 7 1 0.5 42 2.5 9 1 0.5 43 4.0 7 1 0.5 4

TABLE II: Effective one-band parameters for the threesets of parameters of H3b listed in Table I. The last col-umn gives the ratio of the effective on-site repulsion U tothe average effective hopping tm = (tAA+2tAB+tBB)/4.

Set U tAA tAB tBB V11 V12 V22 U/tm1 2.15 −0.382 −0.385 −0.337 0.123 0.170 0.178 5.782 3.01 −0.377 −0.324 −0.338 0.119 0.162 0.181 8.853 3.37 −0.268 −0.327 −0.337 0.066 0.125 0.156 10.71

TABLE III: Exact gap Eg compared with the gap Eavg

obtained after averaging over boundary conditions andEf

g for fixed ( antiperiodic ) boundary condition for aring of 8 sites and different values of U/t.

U/t Eg Eavg (8) Ef

g (8)

4 1.2868 1.98 3.686 2.8928 3.50 4.908 4.6796 5.21 6.47

11

Page 12: Centro Atomico Bariloche and Instituto Balseiro Comisio´n ... · M.E.Simo´n, A.A.Aligia and E.R.Gagliano Centro Atomico Bariloche and Instituto Balseiro Comisio´n Nacional de Energ´ıa

xx xx

x xxxx xx

x xxxx xx

x xxxx xx

xx xx x xx

x xxV1

V2

Fig.1 Simon et. al.

Page 13: Centro Atomico Bariloche and Instituto Balseiro Comisio´n ... · M.E.Simo´n, A.A.Aligia and E.R.Gagliano Centro Atomico Bariloche and Instituto Balseiro Comisio´n Nacional de Energ´ıa

0 2 4 6 8 100369

Fig.2Simon et al.

4

ω/t

0369 6

L=10

σ (ω

)

03690369

Eg

U/t=4

8

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0 2 4 6 8 10 12 14 160

4

8

12

Simon et al. Fig. 3

4

ω/t

0

4

8

126

σ (ω

)

0

4

8

12

Eg

U/t = 6

L=8

Page 15: Centro Atomico Bariloche and Instituto Balseiro Comisio´n ... · M.E.Simo´n, A.A.Aligia and E.R.Gagliano Centro Atomico Bariloche and Instituto Balseiro Comisio´n Nacional de Energ´ıa

0 2 4 6 8 10 12 14 160

3

6

9

124

ω/t

0

3

6

9

126

σ (ω

)

0

3

6

9

12

Eg

Simon et al. Fig. 4

L=8

U/t=8

Page 16: Centro Atomico Bariloche and Instituto Balseiro Comisio´n ... · M.E.Simo´n, A.A.Aligia and E.R.Gagliano Centro Atomico Bariloche and Instituto Balseiro Comisio´n Nacional de Energ´ıa

-2 0 2 4 60.0

0.2

0.4

0.6

x=0.2

ω

0.2

0.4

0.6 ε

F x=0

0.2

0.4

0.6

Fig. 5 Simon et. al.

x=-0.2

ρ(ω

)

Page 17: Centro Atomico Bariloche and Instituto Balseiro Comisio´n ... · M.E.Simo´n, A.A.Aligia and E.R.Gagliano Centro Atomico Bariloche and Instituto Balseiro Comisio´n Nacional de Energ´ıa

-0.6 -0.3 0.0 0.3 0.60.0

0.2

0.4

0.6

0.8

1.0

Simon et. al Fig. 6

Nd

+

Np

+

Np

-

Nd

-

x

Page 18: Centro Atomico Bariloche and Instituto Balseiro Comisio´n ... · M.E.Simo´n, A.A.Aligia and E.R.Gagliano Centro Atomico Bariloche and Instituto Balseiro Comisio´n Nacional de Energ´ıa

1 2 3 4 5-0.2

0.0

0.2

0.4

0.6

0.8

1.0

Simon et. al. Fig. 7

1-(D2

2+P2

2)

D2

2

P2

2

P1

2

D1

2

Page 19: Centro Atomico Bariloche and Instituto Balseiro Comisio´n ... · M.E.Simo´n, A.A.Aligia and E.R.Gagliano Centro Atomico Bariloche and Instituto Balseiro Comisio´n Nacional de Energ´ıa

2

4

6x=0.6

2

4

6 εFx=0

2

4

6x=0.2

2

4

6

Fig. 8 Simon et. al.

x=0.4

ρ(ω)

-2 0 2 4 60

2

4

6x=0.8

ω

Page 20: Centro Atomico Bariloche and Instituto Balseiro Comisio´n ... · M.E.Simo´n, A.A.Aligia and E.R.Gagliano Centro Atomico Bariloche and Instituto Balseiro Comisio´n Nacional de Energ´ıa

0.2

0.4

0.6x=0.6

0.2

0.4

0.6 ε

Fx=0

0.2

0.4

0.6x=0.2

0.2

0.4

0.6x=0.4

ρ(ω)

-2 0 2 4 60.0

0.2

0.4

0.6

Fig. 9 Simon et. al.

x=0.8

ω

Page 21: Centro Atomico Bariloche and Instituto Balseiro Comisio´n ... · M.E.Simo´n, A.A.Aligia and E.R.Gagliano Centro Atomico Bariloche and Instituto Balseiro Comisio´n Nacional de Energ´ıa

0.0 0.2 0.4 0.6 0.8 1.00.0

0.1

0.2

0.3

Fig. 10 Simon et. al.

U/tm

=5.78

U/tm

=8.85

U/tm

=10.71

w -

2x

x

Page 22: Centro Atomico Bariloche and Instituto Balseiro Comisio´n ... · M.E.Simo´n, A.A.Aligia and E.R.Gagliano Centro Atomico Bariloche and Instituto Balseiro Comisio´n Nacional de Energ´ıa

0.0

0.1

0.2

0.3

D (

103

Ω-1

cm

-1)

0.0 0.2 0.4 0.6 0.8 1.0-0.4

-0.3

-0.2

-0.1

0.0

Fig. 11 Simon et. al.

<T

>/V

(e

V)

x

Page 23: Centro Atomico Bariloche and Instituto Balseiro Comisio´n ... · M.E.Simo´n, A.A.Aligia and E.R.Gagliano Centro Atomico Bariloche and Instituto Balseiro Comisio´n Nacional de Energ´ıa

0.2

0.4

0.6x=0

0.2

0.4

0.6

σ( ω

)

Fig. 12 Simon et. al.

x=0.2

(1

03 Ω

-1

cm-1

)

ω (eV)

0.2

0.4

0.6

x=0.4

0 2 4 60.0

0.2

0.4

0.6

x=0.6

0.2

0.4

0.6

x=0.1

Page 24: Centro Atomico Bariloche and Instituto Balseiro Comisio´n ... · M.E.Simo´n, A.A.Aligia and E.R.Gagliano Centro Atomico Bariloche and Instituto Balseiro Comisio´n Nacional de Energ´ıa

0.2

0.4

0.6x=0.1

0.2

0.4

0.6

0.8

x=0

0.2

0.4

0.6

Fig. 13 Simon et. al.

103

Ω-1

cm

-1

x=0.2

σ( ω

)

ω (eV)

0.2

0.4

0.6x=0.4

0 2 4 60.0

0.2

0.4

0.6x=0.6

Page 25: Centro Atomico Bariloche and Instituto Balseiro Comisio´n ... · M.E.Simo´n, A.A.Aligia and E.R.Gagliano Centro Atomico Bariloche and Instituto Balseiro Comisio´n Nacional de Energ´ıa

0.0

0.2

0.4

0.6

Fig. 14 Simon et. al.

tBB

tAB

ρ( ω

)

0 2 4 6 80.0

0.2

0.4

0.6

<J,J> <J

AB,J

AB>

<JBB

,JBB

>

ωσ J( ω

)

ω (eV)

Page 26: Centro Atomico Bariloche and Instituto Balseiro Comisio´n ... · M.E.Simo´n, A.A.Aligia and E.R.Gagliano Centro Atomico Bariloche and Instituto Balseiro Comisio´n Nacional de Energ´ıa

0 2 4 6 80.0

0.1

0.2

0.3

0.4

U/tm

=8.85

x=0.4

x=0.2

x=0.1

x=0

ω (eV)

0.0

0.1

0.2

0.3

0.4

Fig. 15 Simon et. al.

U/tm

=10.71

x=0.4

x=0.2

x=0.1

x=0

Nef