catalogue - vigo€¦ · · 2017-01-13custom engineering / design ... the current that flows in a...

Catalogue

TABLE OF CONTENTS• Symbols............................................................................................................................................................... 3• Glossary of Terms................................................................................................................................................ 4

◦ General Definitions........................................................................................................................................ 4◦ Detector Parameters...................................................................................................................................... 4◦ Preamplifier Parameters................................................................................................................................ 5

• Application Notes................................................................................................................................................. 6◦ Thermoelectric Cooling.................................................................................................................................. 6◦ Thermoelectric Cooler Controllers................................................................................................................. 6◦ NCP03XM222E05RL Thermistor Characteristic............................................................................................7◦ Optical Immersion.......................................................................................................................................... 8◦ Preamplifiers for IR Detectors........................................................................................................................ 9◦ IR Detectors Packages................................................................................................................................ 10◦ IR Windows.................................................................................................................................................. 10◦ Applications................................................................................................................................................. 10◦ Custom Engineering / Design......................................................................................................................11◦ Precautions for Use..................................................................................................................................... 11

• Order Code........................................................................................................................................................ 12• Infrared Detectors.............................................................................................................................................. 15

◦ Photoconductors.......................................................................................................................................... 17◦ Photoelectromagnetic Detectors..................................................................................................................26◦ Photovoltaic Detectors................................................................................................................................. 28

• Infrared Detectors Accessories..........................................................................................................................42◦ Preamplifiers................................................................................................................................................ 44◦ TEC Controllers........................................................................................................................................... 72◦ Preamplifier Power Supplies........................................................................................................................ 80◦ Cables......................................................................................................................................................... 86◦ AC Adaptors................................................................................................................................................. 87◦ Mechanical Accessories.............................................................................................................................. 87

• Warranty............................................................................................................................................................. 94• Contact and Distributors..................................................................................................................................... 95• Appendix............................................................................................................................................................ 96

VIGO System S.A. 129/133 Poznanska St., 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: [email protected] 2Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO

mailto:[email protected]

SYMBOLS

A detector active area tr rise time

Cd detector capacitance tup power-on to LOCK indicator time

D* normalized detectivity w width of the detector

en preamplifier input noise voltage density Vn noise voltage

fo noise measurement frequency Vout output voltage swing

fhi high cut-off frequency Voff output voltage offset

flo low cut-off frequency Vsup power supply voltage

I current VTEC maximum TEC output voltage

Ib bias current Zd detector impedance

Idark dark current λpeak peak wavelength [μm]

Iin total input noise current λopt optimal wavelength [μm]

In noise current λcut-on cut-on wavelength [μm]

in noise current density λcut-off cut-off wavelength [μm]

Isup power supply current τ time constant [ns]

ITEC maximum TEC output current

I' current flowing through detector resistance

IR infrared:

MWIR – Mid-Wavelength Infrared: 2-6 µm

LWIR – Long-Wavelength Infrared: 8-14 µm

k Boltzmann's constant: 1.3806·10-23 J/K

Ki transimpedance

PC photoconductor

PCI photoconductor optically immersed

PCQ quadrant photoconductor

PEM photoelectromagnetic detector

PV photovoltaic detector

PVI photovoltaic optically immersed detector

PVM photovoltaic multiple junction detector

PVMI photovoltaic multiple junction detector optically immersed

PVMQ quadrant photovoltaic multiple junction detector

R detector resistance

Ri current responsivity

RL load resistance

Rout output impedance

Rs series resistance

Rsq sheet resistance

Rv voltage responsivity

Ta ambient temperature



GLOSSARY OF TERMS

General DefinitionsHg1-xCdxTeKnown also as Mercury Cadmium Telluride (MCT), CdHgTe, (Cd,Hg)Teor MerCadTel; an alloy of CdTe and HgTe. Change of the CdTe toHgTe ratio (composition or x-value) can be used to tune opticalabsorption cut-off wavelength in the wide range from ultraviolet (UV) todeep infrared (IR). Cooling shifts the cut-off wavelength towards longwavelengths. Detectors from VIGO System are based on complexgraded gap MCT structures optimized for MWIR (3-6 µm) and LWIR(8-14 µm) ranges.

Detector FormatsSquare and rectangular formats are used for PC, PV, PVM and PEMdetectors.Circular shapes for some PV detectors are available upon request.

Photoelectromagnetic Detectors (PEM)Photovoltaic Detectors based on the Photoelectromagnetic Effect. Itconsists in spatial separation of optically generated electrons andholes in the magnetic field. They do not require electrical bias andshow no flicker noise (1/f).The PEM devices are typically used as fast, uncooled detectors of thelong wavelength radiation.

Photovoltaic Detectors (PV, PVM)Photovoltaic Detectors (photodiodes) are semiconductor structureswith one (PV) or multiple (PVM) homo- or heterojunctions. Absorbedphotons produce electron-hole pairs, resulting in external photocurrent.Reverse bias voltage may be applied to increase differentialresistance, reduce the shot noise, improve high frequencyperformance and dynamic range.Reverse bias may increase responsivity in some devices.Unfortunately, at the expense of flicker noise (1/f) in most cases.Photovoltaic detectors are more vulnerable to electrostaticdischarges than Photoconductors.

Photoconductors (PC)Photoconductive Detectors based on the Photoconductive Effect.Infrared radiation generates charge carriers in the semiconductoractive region decreasing its resistance. The resistance change issensed as a voltage change by applying a constant current bias. Theoptimum bias current is specified in the Final Test Report anddepends on the detector size, operating temperature and spectralcharacteristics

Detector ParametersCurrent and Voltage Responsivity: Ri, Rv

Ri(λ )=CurrentSignal (λ)⋅dλ

Incident Power(λ)⋅d λ [ AW ]

Current responsivity is typically used for description of PV and PVMdetectors.

Ri(λ )=VoltageSignal(λ)⋅dλ

Incident Power(λ)⋅d λ [ VW ]

Voltage responsivity is typically used for description of PC and PEMdetectors.

Responsivity-Width Product: Ri·w, Rv·wThe responsivity of PC, PEM and PVM devices is inverselyproportional to the width w of the detector.Therefore, the normalized responsivity can be expressed as thecurrent responsivity-width product (Ri·w) for PVM or voltageresponsivity-width product (Rv·w) for PC and PEM.

Dark Current: Idark

The current that flows in a photodetector when it is not receiving anylight. It may increase as the temperature rises.The small amount of current that flows through a photonicsemiconductor device when it is not operating. Also known asLeakage Current.

Maximum Bias Current: Imax

The maximum current that can flow through a Photoconductive orPhotovoltaic detector without a risk of its damage.

Bias Current-Width Ratio: Ib/wWidth-normalized photoconductor bias current.Typical Photoconductor's (PC series) bias current Ib should beincreased proportionally to it's width w. Therefore, the normalized biascurrent can be expressed as the Ib/w.

Noise Current and Noise Voltage: In, Vn

Root mean square Noise Current or Noise Voltage.

In=√ In2(t ) Vn=√Un

2(t)

Noise Current and Noise Voltage Density: in, vn

in=In

√Δ f vn=

Vn

√Δ f

Corner Frequency: 1/fFlicker noise or 1/f noise is a frequency dependent noise.

Its power is proportional to 1

fb where b ~ 1.

Below the corner frequency the noise of detectors is dominated byflicker noise.

Normalized Detectivity: D*The Signal-to-Noise Ratio (SNR) at a detector output normalized to1 W radiant power, a 1 cm2 detector optical area and a 1 Hzbandwidth.The higher the D* value, the better the detector.

D*=Ri

in√A=

R v

vn

√A [ cm⋅√HzW ]

Optical Area: AActive Area (Active Element) - the area from which the incidentradiant power is collected.For immersed detector it is different from physical detector area (seeOptical Immersion chapter).

Detector Capacitance: Cd

Parallel capacitance in the detector structure.

Spectral ResponseSpectral Responsivity or Spectral Detectivity – in detector data sheetsit is presented as Rv(λ), Ri(λ) or D*(λ).It can be characterized by cut-on, cut-off, optimum and peakwavelength.

Peak Wavelength: λpeak

λpeak is a wavelength of detector maximum responsivity.

Optimum Wavelength: λopt

The wavelength a device is optimized for. Typically longer than λpeak.

Cut-On Wavelength: λcut-on

λcut-on is the shortest wavelength at which a detector responsivityreaches 10% of the peak value.

Cut-Off Wavelength: λcut-off

λcut-off is the longest wavelength at which a detector responsivityreaches 50% of the peak value.



Glossary of Terms

Resistance – Optical Area Product: R·AArea-normalized detector resistance. Typical photodiodes (PV)resistance decreases proportionally to their area increasing. Therefore,the normalized resistance can be expressed as the R·A.In contrast, the PVM detectors are characterized by SheetResistance.

Series Resistance: Rs

Parasitic resistance in photodiodes. Its contribution to the total dioderesistance may be significant for long wavelength and near roomOperating Temperatures diodes, especially with large Optical Area.

Sheet Resistance: Rsq

The normalized resistance expressed in Ω/□. It is used to normalizethe resistance for different size devices with non-square active area

Rsq=R⋅w

l

Time Constant: τTypically, detector time response can be described by one pole filter.Time Constant is the time it takes detector to reach 1/e ≈ 37% of theinitial signal value.Time Constant is related to the 3dB High Cut-Off Frequency fhi:

τ=1

(2 π f hi)

Time Constant is related to 10 – 90% Rise Time tr:t r=2.2 τ

Operating Temperature: TDetector active element temperature.

Acceptance Angle: ΦAcceptance angle is the maximum angle at which incoming radiationcan be captured by a detector. Radiation coming from a larger coneangle won't reach the detector.

Field of View: FOVVIGO defines the Field of View as the angle (FOV), which is two timesthe half angle defined by:

• the center of the detector and detector housing - in flat orequipped with hemispherical lens detectors,

and• the marginal ray in detectors with intermediate or

hyperhemispherical (standard) lens.In systems without external objectives Acceptance Angle and FOV areidentical.

F-number: F/#F/# is related to the image-space acceptance angle when the system isfocused at infinity.

Preamplifier ParametersOutput Voltage Responsivity: RV

The output voltage divided by optical power incident on the detector.

Output Voltage Swing: Vout

The maximum and minimum voltages where preamplifier works inlinear range.

GNDPoint of zero potential. For standard preamplifiers is common powersupply and signal ground.

Low Cut-Off Frequency: flo

A minimum frequency at which a module responsivity (or preamplifiergain) reaches -3dB of the peak value.

High Cut-Off Frequency: fhi

A maximum frequency at which a module responsivity (or preamplifiergain) reaches -3dB of the peak value.

Output NoiseNoise voltage at preamplifier output.

Average Output Noise Density:

Vn=√∫f 1

f 2

Vout2

(f )df

f 2−f 1

Noise Measurement Frequency: f0

Frequency at which output voltage noise is measured selectively.

Output Noise Density at Specific Frequency: Vn(f0)Noise voltage density measured at a given frequency.

Transimpedance: Ki

Current to voltage conversion factor (ratio).

Ki=Vout

Iin

Preamplifier Input Noise Current: in

Noise current generated by equivalent current source in parallel withideal preamplifier input.

Preamplifier Input Noise Voltage: en

Noise voltage generated by equivalent voltage source in series withideal preamplifier input.

Total Input Noise Current: Iin

Parameter taking into consideration all noise sources related to theinput.

Iin=√(iPA2 +id

2)=Vn0

Tr

Output Impedance: Rout

Equivalent impedance exhibited by its output terminals.

Load Resistance: RL

Optimal resistance of the load: amplifier's or the measurementdevice's.

Output Voltage Offset: Voff

DC component of the output voltage.

Power Supply Voltage: Vsup

Supply voltage required for correct preamplifier operation. ±20%tolerance is allowed.

Power Supply Current: Isup

Supply current consumption during correct preamplifier operation.

Coupling TypePreamplifier coupling type. It may be AC for alternate current or DC fordirect current.

Power Supply Input (+) and (-)Polarity of the power supply related to the ground. Swapping supplyconnectors may lead to module damage.



APPLICATION NOTES

ThermoElectric Cooling (TEC)

Detector cooling reduces noise, increases responsivity and, in somedevices, improves high frequency response. Two-, three- andfour-stage TE coolers are available. TEC is biased with DC power. Allspecifications are given for 300 K heat sink temperature.

TEC are characterized by:

Maximum Temperature Difference: ΔTmax

ΔTmax rated at Q=0, at other Q the ΔT should be estimated asΔT=ΔTmax(1-Q/Qmax).

Optimum Current: Iopt

Supply current giving the highest temperature difference (ΔTmax) at thespecified conditions stated in Detector Final Test Report.

Maximum TEC Voltage: Vmax

Voltage drop at ΔTmax.

Maximum Heat Pumping Capacity: Qmax

Qmax rated at ΔT=0, at other ΔT cooling capacity should be estimatedas Q=Q max(1-ΔT/ΔTmax)

Standard TEC Parameters

Parameter Unit 2TE 3TE 4TETdet K ~230 ~210 ~195Vmax V 1.3 3.6 8.3Imax A 1.2 0.45 0.5Qmax W 0.36 0.27 0.28ΔTmax K 92 114 125

Temperature SensorThe built-in thermistor serves as a sensor of the detector operationtemperature. TE-cooled detectors are equipped with thermistor typeNCP03XM222E05RL as a standard.

Heat SinkingSuitable heat sinking is necessary to dissipate heat generated bythe Peltier cooler or excessive optical irradiation. Since heat is almost100% dissipated at the base of the detector housing, it must be firmlyattached to the heat sink (Figures a and b). Heat sinking via themounting screw or via the detector housing cylindrical walls is notsufficient (Figures c and d). A thin layer of heat conductive epoxy orsilicone grease should be applied to improve thermal contact betweendetector housing and heat sink.A heat sink thermal resistance of ~2 K/W is typically required for themost two- and three-stage Peltier coolers. Four-stage cooler requires~1 K/W.

Figures. Heat dissipation from TE-cooled detector

ThermoElectric Cooler Controllers (TECC)

VIGO System offers the standard TEC controller STCC-04,the miniature TEC controller MTCC-01 and programmable “smart”TEC controllers PTCC-01 (available options: OEM, Basic andAdvanced).

Temperature Sensor InputsTemperature sensor pins – might be connected with any polarity.

TEC Supply Input (+) and (-)Supply polarity for the TEC. Those pins are floating, which means theyare not connected to the GND.

Maximum TEC Controller Output Current: ITEC

Maximum current that is provided by the controller to the TEC.

Maximum TEC Controller Output Voltage: VTEC

Maximum voltage that is provided by the controller to the TEC.

Ripple of Output CurrentIt is a small unwanted residual periodic variation of the DC (directcurrent) output of a power supply (or other device) which has beenderived from an AC (alternating current) source. This ripple is due toincomplete suppression of the rectified DC waveform within the powersupply.

Output Current of the Built-In Power SupplyMaximum current that can be delivered by power supply to thepreamplifier, usually +/-100 mA.

Series Resistance of the Connecting CableMaterial parameter - resistance of the supply cable. It depends oncable length.

Settling Time of the Set Detector TemperatureThe time taken by the cooling system to reach appropriatetemperature of the detector.

Maximum Voltage Across TEC ElementMaximum voltage for TEC supplying.


c

ba

YES

NONO

d

YES


Application Notes

NCP03XM222E05RL Thermistor Characteristic

The electricity applied to between terminals of thermistors should beunder the maximum power dissipation at 25 °C (100 mW) not todestroy the thermosensor. For the measurement of resistance, thepower should not exceed 1 mW.The relation between the resistance and the temperature:

RT=RT0⋅exp (β⋅T0−T

T⋅T0

)

Values for NCP03XM222E05RL thermistor:• RT0 = 2.2 kΩ ± 3% at T0 = 298 K;

180 190 200 210 220 230 240 250 260 270 280 290 300

0

200

400

600

800

1000

1200

1400

1600

1800

2000 Rmin, kOhm

Rnom, kOhm

Rmax, kOhm

Temperature [K]

Th

erm

isto

r re

sis

tan

ce [

kOh

m]

T [K]

180 -93 1594,97 1757,95 1935,84

182 -91 1336,02 1469,90 1615,75

184 -89 1124,16 1234,66 1354,81

186 -87 950,46 1042,11 1141,58

188 -85 807,57 883,99 966,78

190 -83 689,57 753,62 822,88

192 -81 591,68 645,64 703,89

194 -79 510,07 555,75 604,98

196 -77 441,68 480,54 522,34

198 -75 384,05 417,25 452,91

200 -73 335,23 363,71 394,26

202 -71 293,65 318,17 344,43

204 -69 258,05 279,23 301,88

206 -67 227,41 245,76 265,36

208 -65 200,91 216,85 233,85

210 -63 177,89 191,77 206,55

T [oC] Rmin [kΩ] Rnom [kΩ] Rmax [kΩ]

Resistance vs Temperature for NCP03XM222E05RLThermistor

T [K]

212 -61 157,81 169,92 182,79

214 -59 140,22 150,80 162,03

216 -57 124,76 134,02 143,83

218 -55 111,14 119,25 127,83

220 -53 99,10 106,21 113,72

222 -51 88,44 94,67 101,25

224 -49 78,98 84,44 90,21

226 -47 70,57 75,37 80,42

228 -45 63,09 67,30 71,73

230 -43 56,42 60,12 64,01

232 -41 50,49 53,74 57,15

234 -39 45,19 48,05 51,04

236 -37 40,47 42,98 45,61

238 -35 36,26 38,47 40,77

240 -33 32,51 34,45 36,47

242 -31 29,16 30,87 32,64

244 -29 26,18 27,68 29,24

246 -27 23,51 24,84 26,21

248 -25 21,14 22,30 23,51

250 -23 19,02 20,05 21,11

252 -21 17,13 18,04 18,98

254 -19 15,45 16,25 17,07

256 -17 13,95 14,65 15,38

258 -15 12,61 13,23 13,87

260 -13 11,41 11,96 12,53

262 -11 10,34 10,83 11,33

264 -9 9,38 9,82 10,26

266 -7 8,52 8,91 9,31

268 -5 7,75 8,10 8,45

270 -3 7,07 7,37 7,69

272 -1 6,45 6,72 7,00

274 1 5,89 6,13 6,38

276 3 5,38 5,60 5,83

278 5 4,93 5,13 5,32

280 7 4,52 4,69 4,87

282 9 4,15 4,30 4,46

284 11 3,81 3,95 4,09

286 13 3,50 3,63 3,75

288 15 3,22 3,33 3,45

290 17 2,96 3,06 3,17

292 19 2,73 2,82 2,91

294 21 2,51 2,59 2,68

296 23 2,32 2,39 2,46

298 25 2,13 2,20 2,27

T [oC] Rmin [kΩ] Rnom [kΩ] Rmax [kΩ]



Application Notes

Optical Immersion

Optical immersion is achieved by using high refractive indexmicrolenses in order to improve performance of the devices but maylimit acceptance angle.

Optical immersion is monolithic integration of detector element withhyperhemispherical microlens (basic configuration) that makes opticalsize of detector 11 times larger compared to its physical size. Thisresults in improvement of D* by one order of magnitude and electriccapacitance by a factor of two orders of magnitude less compared toconventional detector of the same optical area.Function and properties of hemispherical and hyperhemisphericallenses are illustrated in the Figure and the Table below.

Parameter SymbolHemisphere Hyperhemisphere

Theory GaAs Theory GaAs

Distance L R R R(n+1) 4.3R

-dd'

n 3.3 n2 10.9

-Dimm

*

D*non−imm

n 3.3 n2 10.9

AcceptanceAngle

Φ 180° 180° 2arcsin(1/n) 35°

F/# - 0.5 0.5 n/2 1.62

Table. Immersed Detectors Parameters

n – a refractive index of a lens material (~3.3 for GaAs used by VIGO)d – optical (apparent) detector sized' – physical detector sizeR – lens radiusL – lens face to objective focal plane distance

h=R+Rn

- lens thickness

The values in the above Table show the relative change of a givenparameter comparing to a non-immersed detector of the same opticalsize.Detectors with custom acceptance angles are available uponrequest.

Immersion Technology is described in “Infrared Detectors andSystems”, E.L. Dereniak and G.D. Boreman, Wiley Interscience, 2000.

Figure. Function and properties of hemispherical and hyperhemispherical lense



in

en

Rd

Cd

Cf

Rf

Iph

VO

Application Notes

Preamplifiers for IR PhotodetectorsPreamplifiers are used to amplify weak signals from low noisephotodetectors and provide optimal conditions for detector operation.In addition, preamplifiers protect detectors against overbias and makethe detector/preamplifier system immune to electromagneticinterferences.We offer a variety of transimpedance preamplifiers, AC and DCcoupled, with narrow and wide bandwidths, standing alone orintegrated with detector in common packages called DetectionModules. The transimpedance preamplifiers are preferable in most ofapplications due to inherent linearity and good frequency response.

Transimpedance PreamplifiersThe current readout of infrared detectors is typically achieved intransimpedance (TI) preamplifiers. Important advantage of the TI ampis the ability to maintain the detector at constant bias voltage, equal tovoltage applied to the non-inverting input of the op-amp.Simple description of the detector/TI preamplifier system,schematically shown in Figure 1. The detector is modeled bya photocurrent source Iph, shunt resistance Rd and capacitance Cd. Thephotocurrent is proportional to the input optical power P and detectorcurrent responsivity Ri.

Iph=Ri⋅P (1)

Transimpedance preamplifier is an operational amplifier with feedbackresistance Rf. Feedback capacitance Cf is used to set systembandwidth and eliminate gain peaking at high frequencies.

Figure 1. Transimpedance circuit for infrared photodetector

The output voltage of the transimpedance preamplifier is:

V0=Z f⋅Iph (2)

The transimpedance gain Zf can be approximated by one-pole filtercharacteristics:

Zf=Rf

√1+(2π f)2⋅Cf2⋅R f

2 (3)

with cut-off frequency:

f∞=1

2π f⋅Cf⋅R f(4)

It should be noted that the cut-off frequency is typically greatercompared with the voltage preamplifier when bandwidth is limited bythe detector Rd∙Cd time constant. For frequencies less than the 3dBcut-off frequency f∞, transimpedance is equal to Rf. In consequence,the circuit converts linearly optical input power P into output voltage:

V0=R i⋅R f⋅P (5)

with resulting voltage responsivity Rv=Ri∙Rf independent on frequency,detector resistance and capacitance.Unfortunately, the above considerations are limited to maximalfrequencies dependent on detector capacitance and resistance,op-amp gain-bandwidth product and other factors.

NoiseAs follows from the transimpedance circuit (Figure 1), the preamplifiernoise current can be approximated as:

iPA2

=4k TR f

+ in2+

en2

Zd2 (6)

where in and en are the op-amp open input noise current and shortinput noise voltage, respectively. Zd is the detector impedance:

Zd=Rd

√1+(2π f⋅Cd⋅Rd)2 (7)

At low frequencies preamplifier noise (frequently called „floor noiselevel”) is not dependent on frequency:

iPA2

=4k TR f

+ in2+

en2

Rd2 (8)

At large frequencies the noise current increases due to decreasingdetector impedance:

iPA=2π f⋅Cd⋅en (9)

Incorrect frequency compensation of transimpedance amplifier maycause remarkable increase of the noise level near the top cut-offfrequency (as shown in Figure 2).

Figure 2. Output noise density and frequency response ofthe transimpedance amplifier.

How Preamplifier Affects System PerformanceTotal input current noise of a detection module is:

in2=iPA

2 + id2 (10)

This results in degradation of the overall detectivity of thedetector/preamplifier system by in/id factor.The degradation may be significant for low impedance detectors-having low resistance <50 Ω) or, at high frequencies, having largecapacitance.The design of preamplifiers is dependent on required bandwidth, gain,detector resistance, capacitance and other factors. The crucial step isthe selection of suitable op-amps or discrete transistors. Bipolar

op-amps are characterized by large in ≈2 pA

√Hz and low en ≈1

nV

√Hz,

in contrast to FET-based preamplifiers where in is low ≈1fA

√Hz and en

is large ≈5 nV√Hz

. Therefore, the low en-bipolar op-amps suits well to

low Zd detectors (which means low resistance, large capacitance andhigh frequencies). FET-based op-amps are useful for high Zd detectorsoperating at low frequencies.


Input current noise

Ouput voltage noise

Transimpedance


Application Notes

IR Detectors Packages Applications

VIGO detectors are mounted in several packages (please see Tablebelow).The packages are filled with dry, heavy noble gases for low thermalconductivity (Kr/Xe mixtures). Water vapor condensation is preventedby careful sealing and water absorbers applied inside the package.

Package Detector Type

TO8 PC*), PCI*), PV*), PVI*), PVM*), PVMI*),PC-nTE, PCI-nTE, PV-nTE, PVI-nTE,

PVM-nTE, PVMI-nTE,PCQ, PVMQ

TO39PC, PCI, PV, PVI, PVM, PVMI

BNC

PC, PCI, PV, PVI, PVM, PVMI

PEM

PEM, PEMI

Quadrant*)

PCQ, PVMQ

*) Upon special request.For detailed information please see Appendix – Technical Drawings.

The typical applications of the VIGO System S.A. detectors are givenin the Table below. Please, provide detailed system requirements –our Engineering Team recommend optimum solution.

Applications Detector Series - Examples

Spectroscopy PCI-2TE, PVI-nTE, PVI, PCI

Positioning Systems PV, PV-2TE

Laser MetrologyPV, PV-2TE, PVM, PVM-2TE, PEM,

PEMI

High Speed Operation PVI-nTE, PVI, PVM, PVMI, PEM, PEMI

Analysis of Spatial andTime Distribution of Laser

BeamPV, PV-nTE, PVM, PVM-nTE

Remote TemperatureMeasurements

PV-nTE, PVI-nTE, PVI-nTE, PCI,PCI-nTE

Heterodyne Detection PV-2TE, PVI-nTE, PCI, PCI-nTE

Biomedical Applications PV, PVI-nTE, PVM, PVMI, PEM, PEMI

Pyrometers, Scanners PV-2TE, PVI-nTE, PCI, PCI-nTE

Thermal Imagers PV-2TE, PVI-nTE, PCI, PCI-nTE

Gas Analysis PCI-2TE, PVI-nTE, PVI, PCI

LIDAR PVI-nTE, PCI-nTE

Detection and Monitoringof Thermal Objects

PV-2TE, PVI-nTE PCI, PCI-nTE

Laser-Matter InteractionStudies

PV, PV-2TE, PVM, PVM-2TE, PEM,PEMI

Fire, Flame and HumanBody Detection

PV-2TE, PVI-nTE, PCI, PCI-nTE

Free Space OpticalCommunication

PVI-nTE, PVI

Laser Threat Warning PCI, PVI, PVMI

Tracking Systems PV, PV-2TE, PC, PCI, PCI-2TE, PC-2TE

Nondestructive MaterialTesting

All Devices

IR Windows

VIGO TE cooled detectors are typically provided with:

• 3° wedged Al2O3 windows (wAl2O3)

• 3° wedged ZnSe AR coated windows (wZnSeAR)

3° wedge prevents “fringing” - interference from stray back reflections.

We offer windows optimized for different spectral bands also.Percentage of MWIR and LWIR radiation that can pass through VIGOdetector windows is presented in the Figures below. Windows can beanti-reflection (AR) coated on two surfaces.

It is possible to use windows provided by the User (upon request).

Figure. Percentage of IR radiation that can pass through the window.



Application Notes

Custom Engineering / Design

On the following pages of this catalogue you will find detailedspecifications of devices that are currently offered by VIGO System.However, our Engineering Team - including engineers experienced inoptoelectronics, mechanical engineering and electronics is ready tohelp solve the most sophisticated and complex problems related toinfrared radiation detection & measurements.The technology developed at VIGO System is very flexible, permittingconstruction of devices for specific applications.

Precautions for Use

Operating TemperatureA detector should be operated at its optimal temperature given inthe Final Test Report (delivered with every device).

Maximum VoltageDo not operate the PV detector at higher bias voltages than suggestedin the Final Test Report (delivered with every device).

Be Careful Using Ohmmeters for PV Detectors!Standard ohmmeters may overbias and damage the detector. This isespecially true for small physical area or SWIR PV detectors. Bias of10 mV can be used for resistance measurements of any typeof detector.Ask for conditions of I-V plot measurements!

UsageDevices can operate in the 10% to 80 % humidity, in the -20 °C to+30 °C ambient temperature range. Operation at >30 °C ambientmay reduce performance for standard Peltier coolers..Ask for systems that can operate in the +30 °C to +80 °C ambienttemperature range.

StorageThe following conditions should be fulfilled for safe and reliableoperation of detector:

• store in dark place, 10% to 90% humidity and -20 °C to+50 °C temperature,

• avoid exposing to the direct sunlight and strong UV/VIS lightas this may result in degradation of the detectorperformance,

• avoid electrostatic discharges at leads therefore, the devicesshould be stored having leads shorted.

HandlingSome IR Window materials such as BaF2 are soft and brittle. Particularattention should be paid to not scratch a surface of the window.A damaged window may entirely degrade the detector performance.Excessive mechanical stress applied to the package itself or toa device containing the package may result in permanent damage.Peltier element inside thermoelectrically cooled detectors issusceptible to mechanical shocks. Great care should be taken whenhandling cooled detectors.

Cleaning WindowKeep the Window clean. Use a soft cotton cloth damped with isopropylalcohol and wipe off the surface gently if necessary.

Mechanical ShocksThe Peltier elements may be damaged by excessive mechanicalshock or vibration. Care is recommended during manipulations andnormal use. Drop impacts against a hard surface are particularlydangerous.

Shaping LeadsAvoid bending the leads at a distance less than 2 mm from a base ofthe package to prevent glass seal damage. When shaping the leads,maximum two right angle bends and three twists at the distanceminimum 6 mm from the base of the package.Keep the leads of the detecting element shorted when shaping!

Soldering LeadsIR detectors can be easily damaged by excessive heat. Special careshould be taken when soldering the leads. Usage of heat sinks ishighly recommended. Tweezers can be used for this purpose; whensoldering, clamp a lead at a place between the soldering iron and thebase of the package. To avoid destructive influence of ESD and otheraccidental voltages (e.g. from a non-grounded soldering iron) rules forhandling LSI integrated circuits should be applied to IR detectors too.Leads should be soldered at +370 °C or below within 5 s.

Beam Power LimitationsDamage thresholds, specified as integrated power of incomingradiation:

• for detectors without immersion lens irradiated withcontinuous wave (CW) or single pulse longer than 1 µsirradiance on the active area must not exceed 100 W/cm2.The irradiance of the pulse shorter than 1 µs must notexceed 1 MW/cm2,

• for optically immersed detectors irradiated with CW or singlepulse longer than 1 µs irradiance on the apparent opticalactive area must not exceed 2.5 W/cm2. The irradiance ofthe pulse shorter than 1 µs must not exceed 10 kW/cm2,

• for repeated irradiation with pulses shorter than 1 µs,the equivalent CW irradiation, average power overthe pulse - to - pulse period should be less than the CWdamage threshold according to equation:

( equivalent CWradiationpower)=( pulsepeak power

focus area )⋅( pulseduration)⋅(repetition

rate )Saturation thresholds vary by detector type and can be provided uponrequest.



ORDER CODE

How to Compile Your Order Code?Different information such as detector type, optical immersion, numberof stages TE-cooler, the wavelength a detector is optimized for,dimensions of optical area, package type, window type and FOVcombine to create VIGO System's Detector Order Code.

Below, there are information needed to specify exactly the requireddetector.

Type Immersion - Cooling - λopt - Length x Width - Package Type - Window - FOV

Type Immersion - Cooling - λopt - ΦDiameter - Package Type - Window - FOV

Examples

PVI-2TE-5-0.1x0.1-TO8-wBaF2-35

PV I - 2TE - 5 - 0.1 x 0.1 - TO8 - wAl2O3 - 36

PEM-10.6-1x1-PEM-wBaF2-51

PEM - - 10.6 - 1 x 1 1 PEM - wZnSeAR - 51

PC-10.6-1x1-BNC-NoWindow-102

PC - - 10.6 - 1 x 1 1 BNC - NoWindow - 102

PVI-2TE-6-Φ0.05-TO8-pGeAR-60

PV I - 2TE - 6 - Φ0.05 - TO8 - pGeAR - 36

Detector Types

PC – photoconductor

PV – single junction photovoltaic detector

PVM – LWIR multiple junction photovoltaic detector

PEM – photoelectromagnetic detector

PCQ – quadrant photoconductor

PVMQ – quadrant LWIR multiple junction photovoltaic detector

Optical ImmersionAll detectors can be monolithically integrated with immersionmicrolens. Please add letter “I” to the end of Detector Type symbol forimmersed detectors. Hyperhemispherical immersion microlens isoffered as a standard.

TE CoolingVIGO PC, PV and PVM detectors are available as uncooled devices orequipped with multiple stage TE cooling. Please add “2TE”, “3TE” or“4TE” for two-, three-, or four stage TE cooled detectors respectively.

Wavelength Range and Optimum Wawalength λopt

VIGO standard detectors are optimized for specific wavelength (seeTable below). Other wavelengths are available as an option.

Detector Type Optimum Wavelength [μm]PC, PCI 4 5 6 9 10.6

PC-2TE, PCI-2TE 4 5 6 9 10.6 12 13

PC-3TE, PCI-3TE 9 10.6 12 13

PC-4TE, PCI-4TE 9 10.6 12 13 14

PV, PVI 3 3.4 4 5 6 8

PV-nTE, PVI-nTE 3 3.4 4 5 6 8 10.6

PVM, PVMI, PVM-nTE, PVMI-nTE 8 10.6

PEM, PEMI, PCQ, PVMQ 10.6



Order Code

Optical Area Availability Table

Typical VIGO detectors are squared-shaped. Single junctionphotovoltaic devices are also available as a circular upon request.

Please specify dimension (length×width) for square or diameter (Φ) forcircular areas.

Detector Type Optical Area [mm×mm]0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4

PV-3 O X X O O OPV-2TE-3 O X X O O OPV-3TE-3 O X X O O OPV-4TE-3 O X X O O OPVI-3 O X X OPVI-2TE-3 O X X OPVI-3TE-3 O X X OPVI-4TE-3 O X X OPV-3.4 O X X O O OPV-2TE-3.4 O X X O O OPV-3TE-3.4 O X X O O OPV-4TE-3.4 O X X O O OPVI-3.4 O X X OPVI-2TE-3.4 O X X OPVI-3TE-3.4 O X X OPVI-4TE-3.4 O X X OPC-4 X X X X X X X X X XPC-2TE-4 X X X X X X X XPCI-4 X X X XPCI-2TE-4 X X X XPV-4 O X X O O OPV-2TE-4 O X X O O OPV-3TE-4 O X X O O OPV-4TE-4 O X X O O OPVI-4 O X X OPVI-2TE-4 O X X OPVI-3TE-4 O X X OPVI-4TE-4 O X X OPC-5 X X X X X X X X X XPC-2TE-5 X X X X X X X XPCI-5 X X X XPCI-2TE-5 X X X XPV-5 O X X O O OPV-2TE-5 O X X O O OPV-3TE-5 O X X O O OPV-4TE-5 O X X O O OPVI-5 O X X OPVI-2TE-5 O X X OPVI-3TE-5 O X X OPVI-3TE-5 O X X OPVI-4TE-5 O X X OPC-6 X X X X X X X X X XPC-2TE-6 X X X X X X X XPCI-6 X X X XPCI-2TE-6 X X X XPV-6 O X X O O OPV-2TE-6 O X X O O OPV-3TE-6 O X X O O OPV-4TE-6 O X X O O OPVI-6 O X XPVI-2TE-6 O X XPVI-3TE-6 O X XPVI-4TE-6 O X XPV-8 X X*) PPV-2TE-8 X X*) PPV-3TE-8 X X*) PPV-4TE-8 X X*) PPVI-8 X X*) PPVI-2TE-8 X X*) PPVI-3TE-8 X X*) PPVI-4TE-8 X X X*) PPVM-8 O O X X O O X X X XPVM-2TE-8 O O X X O O X X XPVMI-8 O O X XPVMI-2TE-8 O O X XPVMI-3TE-8 O O X XPVMI-4TE-8 O O X XPC-9 X X X X X X X X X XPC-2TE-9 X X X X X X X XPC-3TE-9 X X X X X X X XPC-4TE-9 X X X X X X X XPCI-9 X X X XPCI-2TE-9 X X X XPCI-3TE-9 X X X XPCI-4TE-9 X X X XPC-10.6 X X X X X X X X X XPC-2TE-10.6 X X X X X X X XPC-3TE-10.6 X X X X X X X XPC-4TE-10.6 X X X X X X X X



Order Code

Detector Type Optical Area [mm×mm]0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4

PCI-10.6 X X X XPCI-2TE-10.6 X X X XPCI-3TE-10.6 X X X XPCI-4TE-10.6 X X X XPV-2TE-10.6 X X*) PPV-3TE-10.6 X X*) PPV-4TE-10.6 X X*) PPVI-2TE-10.6 X X*) PPVI-3TE-10.6 X X*) PPVI-4TE-10.6 X X*) PPVM-10.6 O O X X O O X X X XPVM-2TE-10.6 O O X X O O X X XPVMI-10.6 O O X XPVMI-2TE-10.6 O O X XPVMI-3TE-10.6 O O X XPVMI-4TE-10.6 O O X XPEM-10.6 O O O O X XPEMI-10.6 O O X XPCQ-10.6 X X X X X X X X XPC-2TE-12 X X X X X X X XPC-3TE-12 X X X X X X X XPC-4TE-12 X X X X X X X XPCI-2TE-12 X X X XPCI-3TE-12 X X X XPCI-4TE-12 X X X XPC-2TE-13 X X X X X X X XPC-3TE-13 X X X X X X X XPC-4TE-13 X X X X X X X XPCI-2TE-13 X X X XPCI-3TE-13 X X X XPCI-4TE-13 X X X XPC-4TE-14 X X X XPCI-4TE-14 X X X X

*) Devices may require reverse bias in order to increase dynamic resistance and improve frequency response.X – standard detector - operating without biasP – default - operating with reverse biasO – detectors available upon request, parameters may vary from these in data sheets

Package TypeVIGO detectors are typically offered in four different packages:

Package Type Detector TypeBNC, TO39 PC, PCI, PV, PVI, PVM, PVMI

TO8 PC-nTE, PCI-nTE, PV-nTE, PVI-nTE, PVM-nTE, PVMI-nTE, PCQ, PVMQPEM PEM, PEMI

Window Type

VIGO TE cooled detectors are typically provided with:• 3° wedged Al2O3 windows (wAl2O3)• 3° wedged ZnSe AR coated window (wZnSeAR)

Other Windows are available as following options:

MaterialHardness[kg/mm2]

AR Coating Symbol

BaF2 82 wedged no wBaF2

Si 1100wedged yes wSiARplanar yes pSiAR

ZnSe 120wedged yes wZnSeARplanar yes pZnSeAR

When no window is needed (for uncooled detectors), “NoWindow”attribute must be added.

MaterialHardness[kg/mm2]

AR Coating Symbol

Al2O3 1370wedged

yes wAl2O3ARno wAl2O3

planaryes pAl2O3ARno pAl2O3

Ge 780wedged yes wGeARplanar yes pGeAR

black – standard (without extra charge)red – nonstandard with extra charge

Field of View: FOVAngular field of view of detector in degrees [ °]. FOV depends on type of immersion microlens applied and package used for the detector. Fordetailed information please see Appendix – Technical Drawings.



Infrared Detectors



FeatureParameter

Optimal Wavelength λopt, [µm]Cooling

OperatingTemperature

ImmersionLens

PageSeries 3 3.4 4 5 6 8 9 10.6 12 13 14

PC-λopt

D* [cm·Hz1/2·W-1] 2.0×109 1.0×109 3.0×108 2.0×107 9.0×106

uncooled ~300K no 17τ [ns] 1000 500 200 2 1

PC-2TE-λopt

D* [cm·Hz1/2·W-1] 2.0×1010 1.0×1010 3.0×109 4.5×108 1.4×108 4.5×107 9.0×106

2TE ~230K no 18τ [ns] 4000 2000 1000 20 10 2 2

PC-3TE-λopt

D* [cm·Hz1/2·W-1] 1.5×109 2.5×108 9.0×107 6.0×107

3TE ~210K no 19τ [ns] 7 5 5 4

PC-4TE-λopt

D* [cm·Hz1/2·W-1] 5.0×109 1.0×109 7.0×108 4.0×108 1.4×108

4TE ~195K no 20τ [ns] 8 7 7 6 5

PCI-λopt

D* [cm·Hz1/2·W-1] 6.0×109 4.0×109 1.0×109 1.0×108 9.0×107

uncooled ~300K yes 21τ [ns] 1000 500 200 2 1

PCI-2TE-λopt

D* [cm·Hz1/2·W-1] 4.0×1010 2.0×1010 1.0×1010 4.0×109 1.4×109 4.5×108 2.3×108

2TE ~230K yes 22τ [ns] 4000 2000 1000 20 10 2 2

PCI-3TE-λopt

D* [cm·Hz1/2·W-1] 6.0×109 2.5×109 9.0×108 4.5×108

3TE ~210K yes 23τ [ns] 7 5 5 4

PCI-4TE-λopt

D* [cm·Hz1/2·W-1] 2.0×1010 8.0×109 5.0×109 3.0×109 1.0×109

4TE ~195K yes 24τ [ns] 8 7 7 6 5

PCQ-λopt

D* [cm·Hz1/2·W-1] 9.0×106

uncooled ~300K no 25τ [ns] 1

PEM-λopt

D* [cm·Hz1/2·W-1] 1.0×107

uncooled ~300K no 26τ [ns] 1

PEMI-λopt

D* [cm·Hz1/2·W-1] 5.0×107

uncooled ~300K yes 27τ [ns] 1

PV-λopt

D* [cm·Hz1/2·W-1] 6.5×109 5.0×109 3.0×109 1.0×109 5.0×108 4.0×107

uncooled ~300K no 28τ [ns] 350 260 150 120 80 4

PV-2TE-λopt

D* [cm·Hz1/2·W-1] 7.0×1010 4.0×1010 3.0×1010 9.0×109 2.0×109 2.0×108 1.0×108

2TE ~230K no 29τ [ns] 280 200 100 80 50 30 10

PV-3TE-λopt

D* [cm·Hz1/2·W-1] 1.0×1011 7.0×1010 4.0×1010 1.0×1010 4.0×109 3.0×108 1.5×108

3TE ~210K no 30τ [ns] 280 200 100 80 50 30 10

PV-4TE-λopt

D* [cm·Hz1/2·W-1] 1.5×1011 1.0×1011 6.0×1010 1.5×1010 5.0×109 4.0×108 2.0×108

4TE ~195K no 31τ [ns] 280 200 100 80 50 30 10

PVI-λopt

D* [cm·Hz1/2·W-1] 5.0×1010 4.5×1010 2.0×1010 9.0×109 4.0×109 4.0×108

uncooled ~300K yes 32τ [ns] 350 260 150 120 80 4

PVI-2TE-λopt

D* [cm·Hz1/2·W-1] 5.5×1011 3.0×1011 2.0×1011 6.0×1010 2.0×1010 2.0×109 1.0×109

2TE ~230K yes 33τ [ns] 280 200 100 80 50 30 10

PVI-3TE-λopt

D* [cm·Hz1/2·W-1] 7.0×1011 5.0×1011 3.0×1011 8.0×1010 3.0×1010 3.0×109 1.5×109

3TE ~210K yes 34τ [ns] 280 200 100 80 50 30 10

PVI-4TE-λopt

D* [cm·Hz1/2·W-1] 8.0×1011 7.0×1011 4.0×1011 1.0×1011 4.0×1010 4.0×109 2.0×109

4TE ~195K yes 35τ [ns] 280 200 100 80 50 30 10

PVM-λopt

D* [cm·Hz1/2·W-1] 6.0×107 1.0×107

uncooled ~300K no 36τ [ns] 4 1.5

PVM-2TE-λopt

D* [cm·Hz1/2·W-1] 3.0×108 1.0×108

2TE ~230K no 37τ [ns] 4 3

PVMI-λopt

D* [cm·Hz1/2·W-1] 3.0×108 1.0×108

uncooled ~300K yes 38τ [ns] 4 1.5

PVMI-2TE-λopt

D* [cm·Hz1/2·W-1] 2.0×109 1.0×109

2TE ~230K yes 39τ [ns] 4 3

PVMI-3TE-λopt

D* [cm·Hz1/2·W-1] 3.0×109 1.5×109

3TE ~210K yes 40τ [ns] 4 3

PVMI-4TE-λopt

D* [cm·Hz1/2·W-1] 6.0×109 2.0×109

4TE ~195K yes 41τ [ns] 4 3



PC Series 2 – 11 μm IR PHOTOCONDUCTORS

Example of D* vs Wavelength λ for PC Series HgCdTe Detectors. Spectral Characteristicsof individual detectors may vary from those shown on the chart.

Features• Ambient temperature operation• Perfect match to fast electronics• Convenient to use• Wide dynamic range• Low cost• Prompt delivery• Custom design upon request

DescriptionThe PC-λopt (λopt - optimal wavelength in micrometers) feature IR photoconductivedetector.This series is easy to use, no cooling or heatsink needed. The devices are optimizedfor the maximum performance at λopt. Cut-on wavelength is limited by GaAstransmittance (~0.9 µm). Bias is needed to operate photocurrent. Performance at lowfrequencies (<20 kHz) is reduced due to 1/f noise. Highest performance and stabilityare achieved by application of variable gap (HgCd)Te semiconductor, optimizeddoping and sophisticated surface processing.Standard detectors are available in TO39 or BNC packages without windows. Variouswindows, other packages and connectors are available upon request.

IR Detector Specification @20°CParameter Symbol Unit PC-4 PC-5 PC-6 PC-9 PC-10.6

Optimal Wavelength*) λopt µm 4 5 6 9 10.6Detectivity**):@ λpeak, 20 kHz@ λopt, 20 kHz

D*cm⋅√Hz

W≥3.2×109

≥2.0×109≥1.5×109

≥1.0×109≥7.0×108

≥3.0×108≥1.0×108

≥2.0×107≥1.9×107

≥9.0×106

Voltage Responsivity - Width Product @λopt, 1×1mm

Rv·wV⋅mm

W≥100 ≥40 ≥6 ≥0.4 ≥0.1

Time Constant τ ns ≤1000 ≤500 ≤200 ≤2 ≤1Corner Frequency 1/f kHz 1 to 20

Bias Current - Width RatioIbw

mAmm

1 to 5 1 to 10 1 to 15 2 to 20 5 to 30

Sheet Resistance Rsq Ω 300 to 1000 200 to 400 100 to 300 50 to 150 40 to 120Operating Temperature T K ~300Acceptance Angle, F/# Φ, - deg, - >90, 0.71

*) Other Optimal Wavelengths available upon request.**) Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.

TypeOptical Area [mm×mm]

0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4

PC-4 X X X X X X X X X XPC-5 X X X X X X X X X XPC-6 X X X X X X X X X XPC-9 X X X X X X X X X X

PC-10.6 X X X X X X X X X XX – standard detectors



PC-2TE Series2 – 13 μm IR PHOTOCONDUCTORSTHERMOELECTRICALLY COOLED

Example of D* vs Wavelength λ for PC-2TE Series HgCdTe Detectors. Spectral Characteristicsof individual detectors may vary from those shown on the chart.

Features• High performance in the 2 to 13 μm spectral range• Fast response• Convenient to use• Wide dynamic range• Compact, rugged and reliable• Low cost• Prompt delivery• Custom design upon request

DescriptionThe PC-2TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)feature IR photoconductive detector on two-stage thermoelectrical cooler.The devices are optimized for the maximum performance at λopt. Cut-on wavelength islimited by GaAs transmittance (~0.9 µm). Bias is needed to operate photocurrent.Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highestperformance and stability are achieved by application of variable gap (HgCd)Tesemiconductor, optimized doping and sophisticated surface processing.Custom devices with quadrant cells, multielement arrays, different windows, lensesand optical filters are available upon request.Standard detectors are available in TO8 packages with wAl2O3 or wZnSeAR windows.Other packages, windows and connectors are also available.

IR Detector Specification @20°CParameter Symbol Unit PC-2TE-4 PC-2TE-5 PC-2TE-6 PC-2TE-9 PC-2TE-10.6 PC-2TE-12 PC-2TE-13

Optimal Wavelength*) λopt µm 4 5 6 9 10.6 12 13Detectivity**):@ λpeak, 20 kHz@ λopt, 20 kHz

D*cm⋅√Hz

W≥3.2×1010

≥2.0×1010≥2.0×1010

≥1.0×1010≥6.0×109

≥3.0×109≥9.0×108

≥4.5×108≥4.0×108

≥1.4×108≥1.0×108

≥4.5×107≥4.0×107

≥2.0×107


Rv·wV⋅mm

W≥1000 ≥500 ≥70 ≥5 ≥1.5 ≥0.5 ≥0.25

Time Constant τ ns ≤4000 ≤2000 ≤1000 ≤20 ≤10 ≤2 ≤2Corner Frequency 1/f kHz 1 to 20

Bias Current - Width RatioIb

wmAmm

1 to 2 2 to 4 4 to 8 4 to 10 5 to 15

Sheet Resistance Rsq Ω 600 to 1500 300 to 500 200 to 400 80 to 200 50 to 150 60 to 100 40 to 120Operating Temperature T K ~230Acceptance Angle, F/# Φ, - deg, - 70, 0.87



0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4

PC-2TE-4 X X X X X X X XPC-2TE-5 X X X X X X X XPC-2TE-6 X X X X X X X XPC-2TE-9 X X X X X X X X

PC-2TE-10.6 X X X X X X X XPC-2TE-12 X X X X X X X XPC-2TE-13 X X X X X X X X

X – standard detectors






DescriptionThe PC-3TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)feature IR photoconductive detector on three-stage thermoelectrical cooler.The devices are optimized for the maximum performance at λopt. Cut-on wavelength islimited by GaAs transmittance (~0.9 µm). Bias is needed to operate photocurrent.Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highestperformance and stability are achieved by application of variable gap (HgCd)Tesemiconductor, optimized doping and sophisticated surface processing.Custom devices with quadrant cells, multielement arrays, different windows, lensesand optical filters are available upon request.Standard detectors are available in TO8 packages with wZnSeAR windows. Otherpackages, windows and connectors are also available.

IR Detector Specification @20°CParameter Symbol Unit PC-3TE-9 PC-3TE-10.6 PC-3TE-12 PC-3TE-13

Optimal Wavelength*) λopt µm 9 10.6 12 13Detectivity**):@ λpeak, 20 kHz@ λopt, 20 kHz

D*cm⋅√Hz

W≥2.9×109

≥1.5×109≥4.5×108

≥2.5×108≥1.8×108

≥9.0×107≥1.2×108

≥6.0×107


Rv·wV⋅mm

W≥15 ≥3 ≥1.5 ≥1

Time Constant τ ns ≤7 ≤5 ≤5 ≤4Corner Frequency 1/f kHz 1 to 20


mAmm

4 to 10

Sheet Resistance Rsq Ω 60 to 200 40 to 150Operating Temperature T K ~210Acceptance Angle, F/# Φ, - deg, - 70, 0.87



0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4

PC-3TE-9 X X X X X X X XPC-3TE-10.6 X X X X X X X XPC-3TE-12 X X X X X X X XPC-3TE-13 X X X X X X X X







DescriptionThe PC-4TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)feature IR photoconductive detector on four-stage thermoelectrical cooler.The devices are optimized for the maximum performance at λopt. Cut-on wavelength islimited by GaAs transmittance (~0.9 µm). Bias is needed to operate photocurrent.Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highestperformance and stability are achieved by application of variable gap (HgCd)Tesemiconductor, optimized doping and sophisticated surface processing.Custom devices with quadrant cells, multielement arrays, different windows, lensesand optical filters are available upon request.Standard detectors are available in TO8 packages with wZnSeAR windows. Otherpackages, windows and connectors are also available.

IR Detector Specification @20°CParameter Symbol Unit PC-4TE-9 PC-4TE-10.6 PC-4TE-12 PC-4TE-13 PC-4TE-14

Optimal Wavelength*) λopt µm 9 10.6 12 13 14Detectivity**):@ λpeak, 20 kHz@ λopt, 20 kHz

D*cm⋅√Hz

W≥5.0×109

≥3.0×109≥9.0×108

≥5.0×108≥4.0×108

≥2.0×108≥2.0×108

≥1.0×108≥5.0×107

≥3.0×107


Rv·wV⋅mm

W≥25 ≥5 ≥3 ≥2 ≥1



mAmm

4 to 10

Sheet Resistance Rsq Ω 80 to 250 60 to 200 50 to 150Operating Temperature T K ~195Acceptance Angle, F/# Φ, - deg, - 70, 0.87



0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4

PC-4TE-9 X X X X X X X XPC-4TE-10.6 X X X X X X X XPC-4TE-12 X X X X X X X XPC-4TE-13 X X X X X X X XPC-4TE-14 X X X X X X X X




PCI Series2 – 11 μm IR PHOTOCONDUCTORS

OPTICALLY IMMERSED

Example of D* vs Wavelength λ for PCI Series HgCdTe Detectors. Spectral Characteristicsof individual detectors may vary from those shown on the chart.

Features• Ambient temperature operation• Perfect match to fast electronics• Convenient to use• Wide dynamic range• Low cost• Prompt delivery• Custom design upon request

DescriptionThe PCI-λopt photodetectors series (λopt - optimal wavelength in micrometers) featureIR photoconductive detector, optically immersed to high refractive index GaAshyperhemispherical (standard) or hemispherical or any intermediate lens (as option)for different acceptance angle and saturation level.This series is easy to use, no cooling or heatsink needed. The devices are optimizedfor the maximum performance at λopt. Cut-on wavelength is limited by GaAstransmittance (~0.9 µm). Bias is needed to operate photocurrent. Performance at lowfrequencies (<20 kHz) is reduced due to 1/f noise. Highest performance and stabilityare achieved by application of variable gap (HgCd)Te semiconductor, optimizeddoping and sophisticated surface processing.Standard detectors are available in TO39 or BNC packages without windows. Variouswindows, other packages and connectors are available upon request.

IR Detector Specification @20°CParameter Symbol Unit PC-4 PC-5 PC-6 PC-9 PC-10.6

Optimal Wavelength*) λopt µm 4 5 6 9 10.6Detectivity**):@ λpeak, 20 kHz@ λopt, 20 kHz

D*cm⋅√Hz

W≥1.0×1010

≥6.0×109≥6.0×109

≥4.0×109≥2.5×109

≥1.0×109≥5.0×108

≥1.0×108≥1.0×108

≥8.0×107


Rv·wV⋅mm

W≥600 ≥300 ≥60 ≥3 ≥1



mAmm

1 to 2 2 to 4 3 to 10 3 to 15 5 to 20

Sheet Resistance Rsq Ω 300 to 1000 200 to 400 100 to 300 50 to 150 40 to 120Operating Temperature T K ~300Acceptance Angle, F/# Φ, - deg, - 36, 1.62



0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4

PCI-4 X X X XPCI-5 X X X XPCI-6 X X X XPCI-9 X X X X

PCI-10.6 X X X XX – standard detectors



PCI-2TE Series2 – 13 μm IR PHOTOCONDUCTORSTHERMOELECTRICALLY COOLED

OPTICALLY IMMERSED

Example of D* vs Wavelength λ for PCI-2TE Series HgCdTe Detectors. Spectral Characteristicsof individual detectors may vary from those shown on the chart.


DescriptionThe PCI-2TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)feature IR photoconductive detector on two-stage thermoelectrical cooler, opticallyimmersed to high refractive index GaAs hyperhemispherical (standard) orhemispherical or any intermediate lens (as option) for different acceptance angle andsaturation level.The devices are optimized for the maximum performance at λopt. Cut-on wavelength islimited by GaAs transmittance (~0.9 µm). Bias is needed to operate photocurrent.Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highestperformance and stability are achieved by application of variable gap (HgCd)Tesemiconductor, optimized doping and sophisticated surface processing.Custom devices with quadrant cells, multielement arrays, different windows, lensesand optical filters are available upon request.Standard detectors are available in TO8 packages with wAl2O3 or wZnSeAR windows.Other packages, windows and connectors are also available.

IR Detector Specification @20°CParameter Symbol Unit PCI-2TE-4 PCI-2TE-5 PCI-2TE-6 PCI-2TE-9 PCI-2TE-10.6 PCI-2TE-12 PCI-2TE-13

Optimal Wavelength*) λopt µm 4 5 6 9 10.6 12 13Detectivity**):@ λpeak, 20 kHz@ λopt, 20 kHz

D*cm⋅√Hz

W≥6.0×1010

≥4.0×1010≥4.0×1010

≥2.0×1010≥2.0×1010

≥1.0×1010≥1.0×1010

≥4.0×109≥3.5×109

≥1.4×109≥1.0×109

≥4.5×108≥4.0×108

≥2.3×108


Rv·wV⋅mm

W≥6000 ≥3000 ≥600 ≥40 ≥15 ≥5 ≥2.5

Time Constant τ ns ≤4000 ≤2000 ≤1000 ≤20 ≤10 ≤2 ≤2Corner Frequency 1/f kHz 1 to 20

Bias Current - Width RatioIb

wmAmm

0.05 to 0.3 0.1 to 0.5 0.3 to 0.8 2 to 5 5 to 20

Sheet Resistance Rsq Ω 600 to 1500 300 to 500 200 to 600 80 to 200 50 to 150 60 to 100 40 to 120Operating Temperature T K ~230Acceptance Angle, F/# Φ, - deg, - 36, 1.62



0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4

PCI-2TE-4 X X X XPCI-2TE-5 X X X XPCI-2TE-6 X X X XPCI-2TE-9 X X X X

PCI-2TE-10.6 X X X XPCI-2TE-12 X X X XPCI-2TE-13 X X X X





OPTICALLY IMMERSED



DescriptionThe PCI-3TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)feature IR photoconductive detector on three-stage thermoelectrical cooler, opticallyimmersed to high refractive index GaAs hyperhemispherical (standard) orhemispherical or any intermediate lens (as option) for different acceptance angle andsaturation level.The devices are optimized for the maximum performance at λopt. Cut-on wavelength islimited by GaAs transmittance (~0.9 µm). Bias is needed to operate photocurrent.Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highestperformance and stability are achieved by application of variable gap (HgCd)Tesemiconductor, optimized doping and sophisticated surface processing.Custom devices with quadrant cells, multielement arrays, different windows, lensesand optical filters are available upon request.Standard detectors are available in TO8 packages with wZnSeAR windows. Otherpackages, windows and connectors are also available.

IR Detector Specification @20°CParameter Symbol Unit PCI-3TE-9 PCI-3TE-10.6 PCI-3TE-12 PCI-3TE-13

Optimal Wavelength*) λopt µmDetectivity**):@ λpeak, 20 kHz@ λopt, 20 kHz

D*cm⋅√Hz

W≥1.1×1010

≥6.0×109≥4.5×109

≥2.5×109≥1.6×109

≥9.0×108≥9.0×108

≥4.5×108


Rv·wV⋅mm

W≥150 ≥30 ≥10 ≥5



mAmm

3 to 5

Sheet Resistance Rsq Ω 60 to 200 40 to 160 40 to 150 60 to 100Operating Temperature T K ~210Acceptance Angle, F/# Φ, - deg, - 36, 1.62



0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4

PCI-3TE-9 X X X XPCI-3TE-10.6 X X X XPCI-3TE-12 X X X XPCI-3TE-13 X X X X





OPTICALLY IMMERSED



DescriptionThe PCI-4TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)feature IR photoconductive detector on four-stage thermoelectrical cooler, opticallyimmersed to high refractive index GaAs hyperhemispherical (standard) orhemispherical or any intermediate lens (as option) for different acceptance angle andsaturation level.The devices are optimized for the maximum performance at λopt. Cut-on wavelength islimited by GaAs transmittance (~0.9 µm). Bias is needed to operate photocurrent.Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highestperformance and stability are achieved by application of variable gap (HgCd)Tesemiconductor, optimized doping and sophisticated surface processing.Custom devices with quadrant cells, multielement arrays, different windows, lensesand optical filters are available upon request.Standard detectors are available in TO8 packages with wZnSeAR windows. Otherpackages, windows and connectors are also available.

IR Detector Specification @20°CParameter Symbol Unit PCI-4TE-9 PCI-4TE-10.6 PCI-4TE-12 PCI-4TE-13 PCI-4TE-14

Optimal Wavelength*) λopt µm 9 10.6 12 13 14Detectivity**):@ λpeak, 20 kHz@ λopt, 20 kHz

D*cm⋅√Hz

W≥2.0×1010

≥1.0×1010≥8.0×109

≥4.0×109≥4.0×109

≥2.0×109≥2.0×109

≥1.0×109≥5.0×108

≥3.0×108


Rv·wV⋅mm

W≥200 ≥40 ≥15 ≥7 ≥5



mAmm

3 to 5

Sheet Resistance Rsq Ω 80 to 250 60 to 200 50 to 150Operating Temperature T K ~195Acceptance Angle, F/# Φ, - deg, - 36, 1.62



0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4

PCI-4TE-9 X X X XPCI-4TE-10.6 X X X XPCI-4TE-12 X X X XPCI-4TE-13 X X X XPCI-4TE-14 X X X X




PCQ Series2 - 11 μm IR PHOTOCONDUCTORS

QUADRANT GEOMETRY

Example of D* vs Wavelength λ for PCQ Series HgCdTe Detectors. Spectral Characteristicsof individual detectors may vary from those shown on the chart.

Features• Ambient temperature operation

• D* @10.6μm: ≥ 9.0×106 cm⋅√HzW

• Time constant of 1 ns or less• Perfect match to fast electronics• Convenient to use• Wide dynamic range• Low cost• Prompt delivery• Custom design upon request

DescriptionThe PCQ-λopt (λopt - optimal wavelength in micrometers) series detectors are quadrant,high speed, ambient temperature IR photoconductive detectors.The devices are optimized for the maximum performance at λopt. Cut-on wavelength islimited by GaAs transmittance (~0.9 µm). Bias is needed to operate photocurrent.Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highestperformance and stability are achieved by application of variable gap (HgCd)Tesemiconductor, optimized doping and sophisticated surface processing.The detectors are well suited for broadband CO2 laser detection due to a very shorttime constant and perfect match to fast electronics. Standard detectors are available in TO8 or specialized Quadrant (with four SMAconnectors) packages without windows.Custom devices such as various sizes, configurations, connectors, windows andoptical filters are available upon request.

IR Detector Specification @20°CParameter Symbol Unit PCQ-10.6

Optimal Wavelength λopt µm 10.6Detectivity*):@ λpeak, 20 kHz@ λopt, 20 kHz

D*cm⋅√Hz

W≥2.5×107

≥9.0×106


Rv·wV⋅mm

W≥0.1

Time Constant τ ns ≤1Corner Frequency 1/f kHz 1 to 20


mAmm

5 to 30

Sheet Resistance Rsq Ω 40 to 120Operating Temperature T K ~300Acceptance Angle, F/# Φ, - deg, - 60, 1

*) Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.


0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4

PCQ-10.6 X X X X X X X X XX – standard detectors



PEM Series 2 – 11 μm IR PHOTOELECTROMAGNETIC DETECTORS

Example of D* vs Wavelength λ for PEM Series HgCdTe Detectors. Spectral Characteristicsof individual detectors may vary from those shown on the chart.

Features• Ambient temperature operation• No bias required• 2 to 11 μm spectral range• Time constant of 1 ns or less• No flocker noise• Operation from DC to VHF• Lightweight, rugged and reliable• Convenient to use• Low cost• Custom design upon request

DescriptionThe PEM series detectors operate on the photoelectromagnetic effect in thesemiconductors. The devices are typically optimized for the best performance at10.6 µm.The detector includes active element based on (HgCd)Te band gap engineered withselected composition and doping profiles, and miniature permanent magnets toproduce a magnetic field.The PEM detectors are well suited for heterodyne detection of 10.6 µm radiation.Exhibiting no flicker noise, they can be at the same time used for detection of CW andlow frequency modulated radiation in the whole 2 to 11 µm spectral range.Standard detectors are available in specialized PEM packages (with SMA connectors)with wZnSeAR windows.Custom devices such as single elements of various sizes, quadrant cells andmultielement arrays, various specialized packages and connectors are available uponrequest.

IR Detector Specification @20°CParameter Symbol Unit PEM-10.6


D*cm⋅√Hz

W ≥3.0×107

≥1.0×107

Voltage Responsivity - Width Product @λopt 1×1mm

Rv·wV⋅mm

W≥0.1

Time Constant τ ns ≤1Resistance R Ω 40 to 100Operating Temperature T K ~300Acceptance Angle, F/# Φ, - deg, - 51, 1.16



0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4

PEM-10.6 O O O O X XX – standard detectorsO – detectors available upon request, parameters may vary from these in Data Sheet



PEMI Series2 – 11 μm IR PHOTOELECTROMAGNETIC DETECTORS

OPTICALLY IMMERSED

Example of D* vs Wavelength λ for PEMI Series HgCdTe Detectors. Spectral Characteristicsof individual detectors may vary from those shown on the chart.

Features• Ambient temperature operation• No bias required• 2 to 11 μm spectral range• Time constant of 1 ns or less• No flocker noise• Operation from DC to VHF• Lightweight, rugged and reliable• Convenient to use• Low cost• Custom design upon request

DescriptionThe PEMI series detectors operate on the photoelectromagnetic effect in thesemiconductors, optically immersed to high refractive index hyperhemispherical(standard) or hemispherical (option) lenses.The devices are typically optimized for thebest performance at 10.6 µm.The detector includes active element based on (Hg,Cd)Te band gap engineered withselected composition and doping profiles, and miniature permanent magnets toproduce a magnetic field.The PEMI detectors are well suited for heterodyne detection of 10.6 µm radiation.Exhibiting no flicker noise, they can be at the same time used for detection of CW andlow frequency modulated radiation in the whole 2 to 11 µm spectral range.Standard detectors are available in specialized PEM packages (with SMA connectors)with wZnSeAR windows.Custom devices such as single elements of various sizes, quadrant cells andmultielement arrays, various specialized packages and connectors are available uponrequest.

IR Detector Specification @20°CParameter Symbol Unit PEMI-10.6


D*cm⋅√Hz

W≥1.0x108

≥5.0x107

Voltage Responsivity - Width Product @λopt 1×1mm

Rv·wV⋅mm

W≥0.4

Time Constant τ ns ≤1Resistance R Ω 40 to 100Operating Temperature T K ~300Acceptance Angle, F/# Φ, - deg, - 36, 1.62



0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4

PEMI-10.6 O O X XX – standard detectorsO – detectors available upon request, parameters may vary from these in Data Sheet



PV Series 3 – 8 μm IR PHOTOVOLTAIC DETECTORS

Example of D* vs Wavelength λ for PV Series HgCdTe Detectors. Spectral Characteristicsof individual detectors may vary from those shown on the chart.

Features• Ambient temperature operation• No bias required• Short time constant• No flicker noise• Operation from DC to VHF• Perfect match to fast electronics• Wide dynamic range• Low cost• Custom design upon request

The PV-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IRphotovoltaic detector.This series is easy to use, no cooling or heatsink needed. The devices are optimizedfor the maximum performance at λopt. Cut-on wavelength can be optimized uponrequest. Reverse bias may significantly increase speed of response and dynamicrange. It results also in improved performance at high frequencies, but 1/f noise thatappears in biased devices may reduce performance at low frequencies. Highestperformance and stability are achieved by application of variable gap HgCdTesemiconductor, optimized doping and sophisticated surface processing.Standard detectors are available in TO39 or BNC packages without windows. Variouswindows, other packages and connectors are available upon request.

IR Detector Specification @20°CParameter Symbol Unit PV-3 PV-3.4 PV-4 PV-5 PV-6 PV-8

Optimal Wavelength*) λopt µm 3 3.4 4 5 6 8Detectivity**):@ λpeak

@ λopt

D*cm⋅√Hz

W≥8.0×109

≥6.5×109≥7.0×109

≥5.0×109≥5.0×109

≥3.0×109≥2.0×109

≥1.0×109≥1.0×109

≥5.0×108≥8.0×107

≥4.0×107

Current Responsivity RiAW

≥0.5 ≥0.8 ≥1 ≥1 ≥1 ≥0.3

Time Constant τ ns ≤350 ≤260 ≤150 ≤120 ≤80 ≤4Time Constant***) τ ns ≤3 ≤2 ≤1 ≤0.7 ≤0.7 ≤0.7Resistance – Optical Area Product

R·A Ω·cm2 ≥1 ≥0.5 ≥0.1 ≥0.01 ≥0.002 ≥0.0001

Operating Temperature T K ~300Acceptance Angle, F/# Φ, - deg, - >90, 0.71

*) Other Optimal Wavelengths available upon request.**) Data Sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.***) Response which may be achieved at reverse bias (selected detectors upon request). Devices with faster response are availabe upon special request.

TypeOptical Area*) [mm×mm]

0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4

PV-3 O X X O O OPV-3.4 O X X O O OPV-4 O X X O O OPV-5 O X X O O OPV-6 O X X**) O OPV-8 X X**) P

*) Circular shaped Optical Area (Diameter [mm]) can be provided upon request.**) Custom detectors may require reverse bias in order to increase Dynamic Resistance to improve frequency response.X – standard detectorsP – default with reverse biasO – detectors available upon request; parameters may vary from these in Data Sheet



PV-2TE Series2 – 12 μm IR PHOTOVOLTAIC DETECTORS

THERMOELECTRICALLY COOLED

Example of D* vs Wavelength λ for PV-2TE Series HgCdTe Detectors. Spectral Characteristicsof individual detectors may vary from those shown on the chart.

Features• High performance in the 2 to 12 µm spectral range• Fast response• No flicker noise• Convenient to use• Wide dynamic range• Compact, rugged and reliable• Low cost• Prompt delivery• Custom design upon request

DescriptionThe PV-2TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)feature IR photovoltaic detector on two-stage thermoelectrical cooler.The devices are optimized for the maximum performance at λopt. Cut-on wavelengthcan be optimized upon request. Reverse bias may significantly increase speed ofresponse and dynamic range. It results also in improved performance at highfrequencies, but 1/f noise that appears in biased devices may reduce performance atlow frequencies. Highest performance and stability are achieved by application ofvariable gap HgCdTe semiconductor, optimized doping and sophisticated surfaceprocessing. Custom devices with quadrant cells, multielement arrays, differentwindows, lenses and optical filters are available upon request.Standard detectors are available in TO8 packages with wAl2O3 or wZnSeAR windows.Other packages, windows and connectors are also available.

IR Detector Specification @20°CParameter Symbol Unit PV-2TE-3 PV-2TE-3.4 PV-2TE-4 PV-2TE-5 PV-2TE-6 PV-2TE-8 PV-2TE-10.6

Optimal Wavelength*) λopt µm 3 3.4 4 5 6 8 10.6Detectivity**):@ λpeak

@ λopt

D*cm⋅√Hz

W≥1.0×1011

≥7.0×1010≥6.0×1010

≥4.0×1010≥4.0×1010

≥3.0×1010≥1.5×1010

≥9.0×109≥5.0×109

≥2.0×109≥4.0×108

≥2.0×108≥2.0×108

≥1.0×108


≥0.5 ≥0.8 ≥1 ≥1.3 ≥1.5 ≥0.8 ≥0.4

Time Constant τ ns ≤280 ≤200 ≤100 ≤80 ≤50 ≤30 ≤10Time Constant***) τ ns ≤3 ≤2 ≤1 ≤0.7 ≤0.5 ≤0.4 ≤0.4Resistance – Optical Area Product

R·A Ω·cm2 ≥150 ≥3 ≥2 ≥0.1 ≥0.02 ≥0.0002 ≥0.0001

Operating Temperature T K ~230Acceptance Angle, F/# Φ, - deg, - 70, 0.87



0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4

PV-2TE-3 O X X O O OPV-2TE-3.4 O X X O O OPV-2TE-4 O X X O O OPV-2TE-5 O X X O O OPV-2TE-6 O X X**) O OPV-2TE-8 X X**) P

PV-2TE-10.6 X X**) P*) Circular shaped Optical Area (Diameter [mm]) can be provided upon request.**) Custom detectors may require reverse bias in order to increase Dynamic Resistance to improve frequency response.X – standard detectorsP – default with reverse biasO – detectors available upon request; parameters may vary from these in Data Sheet






Features• High performance in the 2 to12 µm spectral range • Fast response• No flicker noise• Convenient to use• Wide dynamic range• Compact, rugged and reliable• Low cost• Prompt delivery• Custom design upon request

DescriptionThe PV-3TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)feature IR photovoltaic detector on three-stage thermoelectrical cooler.The devices are optimized for the maximum performance at λopt. Cut-on wavelengthcan be optimized upon request. Reverse bias may significantly increase speed ofresponse and dynamic range. It results also in improved performance at highfrequencies, but 1/f noise that appears in biased devices may reduce performance atlow frequencies. Highest performance and stability are achieved by application ofvariable gap HgCdTe semiconductor, optimized doping and sophisticated surfaceprocessing. Custom devices with quadrant cells, multielement arrays, differentwindows, lenses and optical filters are available upon request.Standard detectors are available in TO8 packages with wAl2O3 or wZnSeAR windows.Other packages, windows and connectors are also available.



@ λopt

D*cm⋅√Hz

W≥3.0×1011

≥1.0×1011≥9.0×1010

≥7.0×1010≥6.0×1010

≥4.0×1010≥4.0×1010

≥1.0×1010≥7.0×109

≥4.0×109≥5.0×108

≥3.0×108≥3.0×108

≥1.5×108


≥0.5 ≥0.8 ≥1 ≥1.3 ≥1.5 ≥1 ≥0.7


R·A Ω·cm2 ≥240 ≥15 ≥6 ≥0.3 ≥0.025 ≥0.0004 ≥0.0002




0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4

PV-3TE-3 O X X O O OPV-3TE-3.4 O X X O O OPV-3TE-4 O X X O O OPV-3TE-5 O X X O O OPV-3TE-6 O X X O O OPV-3TE-8 X X**) P








DescriptionThe PV-4TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)feature IR photovoltaic detector on four-stage thermoelectrical cooler.The devices are optimized for the maximum performance at λopt. Cut-on wavelengthcan be optimized upon request. Reverse bias may significantly increase speed ofresponse and dynamic range. It results also in improved performance at highfrequencies, but 1/f noise that appears in biased devices may reduce performance atlow frequencies. Highest performance and stability are achieved by application ofvariable gap HgCdTe semiconductor, optimized doping and sophisticated surfaceprocessing. Custom devices with quadrant cells, multielement arrays, differentwindows, lenses and optical filters are available upon request.Standard detectors are available in TO8 packages with wAl2O3 or wZnSeAR windows.Other packages, windows and connectors are also available.



@ λopt

D*cm⋅√Hz

W≥3.0×1011

≥1.5×1011≥2.0×1011

≥1.0×1011≥1.0×1011

≥6.0×1010≥4.0×1010

≥1.5×1010≥9.0×109

≥5.0×109≥5.0×108

≥4.0×108≥4.0×108

≥2.0×108


≥0.5 ≥0.8 ≥1 ≥1.3 ≥1.5 ≥1.5 ≥0.7


R·A Ω·cm2 ≥300 ≥20 ≥8 ≥0.4 ≥0.03 ≥0.0006 ≥0.0005




0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4

PV-4TE-3 O X X O O OPV-4TE-3.4 O X X O O OPV-4TE-4 O X X O O OPV-4TE-5 O X X O O OPV-4TE-6 O X X O O OPV-4TE-8 X X**) P




PVI Series3 – 8 μm IR PHOTOVOLTAIC DETECTORS

OPTICALLY IMMERSED

Example of D* vs Wavelength λ for PVI Series HgCdTe Detectors. Spectral Characteristicsof individual detectors may vary from those shown on the chart.

Features• Ambient temperature operation• No bias required• Short time constant• No flicker noise• Operation from DC to VHF• Perfect match to fast electronics• Wide dynamic range• Low cost• Custom design upon request

The PVI-λopt photodetectors series (λopt - optimal wavelength in micrometers) featureIR photovoltaic detector, optically immersed to high refractive index GaAshyperhemispherical (standard) or hemispherical or any intermediate lens (as option)for different acceptance angle and saturation level.This series is easy to use, no cooling or heatsink needed. The devices are optimizedfor the maximum performance at λopt. Cut-on wavelength can be optimized uponrequest. Reverse bias may significantly increase speed of response and dynamicrange. It results also in improved performance at high frequencies, but 1/f noise thatappears in biased devices may reduce performance at low frequencies.Highestperformance and stability are achieved by application of variable gap HgCdTesemiconductor, optimized doping and sophisticated surface processing.Standard detectors are available in TO39 or BNC packages without windows. Variouswindows, other packages and connectors are available upon request.

IR Detector Specification @20°CParameter Symbol Unit PVI-3 PVI-3.4 PVI-4 PVI-5 PVI-6 PVI-8

Optimal Wavelength*) λopt µm 3 3.4 4 5 6 8Detectivity**):@ λpeak

@ λopt

D*cm⋅√Hz

W≥5.0×1010

≥5.0×1010≥5.0×1010

≥4.5×1010≥3.0×1010

≥2.0×1010≥1.5×1010

≥9.0×109≥8.0×109

≥4.0×109≥8.0×108

≥4.0×108


≥0.5 ≥0.8 ≥1 ≥1 ≥1 ≥0.3

Time Constant τ ns ≤350 ≤260 ≤150 ≤120 ≤80 ≤4Time Constant***) τ ns ≤3 ≤2 ≤1 ≤0.7 ≤0.5 ≤0.7Resistance – Optical Area Product

R·A Ω·cm2 ≥100 ≥50 ≥6 ≥1 ≥0.2 ≥0.01




0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4

PVI-3 O X X OPVI-3.4 O X X OPVI-4 O X X OPVI-5 O X X OPVI-6 O X XPVI-8 X X X**) P




PVI-2TE Series2 – 12 μm IR PHOTOVOLTAIC DETECTORS

THERMOELECTRICALLY COOLEDOPTICALLY IMMERSED

Example of D* vs Wavelength λ for PVI-2TE Series HgCdTe Detectors. Spectral Characteristicsof individual detectors may vary from those shown on the chart.

Features• High performance in the 2 to 12 µm spectral range • Fast response• No flicker noise• Convenient to use• Wide dynamic range• Compact, rugged and reliable• Low cost• Prompt delivery• Custom design upon request

DescriptionThe PVI-2TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)feature IR photovoltaic detector on two-stage thermoelectrical cooler, opticallyimmersed to high refractive index GaAs hyperhemispherical (standard) orhemispherical or any intermediate lens (as option) for different acceptance angle andsaturation level.The devices are optimized for the maximum performance at λopt. Cut-on wavelengthcan be optimized upon request. Reverse bias may significantly increase speed ofresponse and dynamic range. It results also in improved performance at highfrequencies, but 1/f noise that appears in biased devices may reduce performance atlow frequencies. Highest performance and stability are achieved by application ofvariable gap HgCdTe semiconductor, optimized doping and sophisticated surfaceprocessing. Custom devices with quadrant cells, multielement arrays, differentwindows, lenses and optical filters are available upon request.Standard detectors are available in TO8 packages with wAl2O3 or wZnSeAR windows.Other packages, windows and connectors are also available.

IR Detector Specification @20°CParameter Symbol Unit PVI-2TE-3 PVI-2TE-3.4 PVI-2TE-4 PVI-2TE-5 PVI-2TE-6 PVI-2TE-8 PVI-2TE-10.6


@ λopt

D*cm⋅√Hz

W≥8.0×1011

≥5.5×1011≥6.0×1011

≥3.0×1011≥3.0×1011

≥2.0×1011≥1.0×1011

≥6.0×1010≥5.0×1010

≥2.0×1010≥4.0×109

≥2.0×109≥2.0×109

≥1.0×109


≥0.5 ≥0.8 ≥1 ≥1.3 ≥1.5 ≥0.8 ≥0.4


R·A Ω·cm2 ≥15000 ≥300 ≥200 ≥10 ≥2 ≥0.002 ≥0.01




0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4

PVI-2TE-3 O X X OPVI-2TE-3.4 O X X OPVI-2TE-4 O X X OPVI-2TE-5 O X X OPVI-2TE-6 O X XPVI-2TE-8 X X**) PPVI-2TE-10.6 X X**) P







Features• High performance in the 2 to 12 µm spectral range • Fast response• No flicker noise• Convenient to use• Wide dynamic range• Compact, rugged and reliable• Low cost• Prompt delivery• Custom design upon request

DescriptionThe PVI-3TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)feature IR photovoltaic detector on three-stage thermoelectrical cooler, opticallyimmersed to high refractive index GaAs hyperhemispherical (standard) orhemispherical or any intermediate lens (as option) for different acceptance angle andsaturation level.The devices are optimized for the maximum performance at λopt. Cut-on wavelengthcan be optimized upon request. Reverse bias may significantly increase speed ofresponse and dynamic range. It results also in improved performance at highfrequencies, but 1/f noise that appears in biased devices may reduce performance atlow frequencies. Highest performance and stability are achieved by application ofvariable gap HgCdTe semiconductor, optimized doping and sophisticated surfaceprocessing. Custom devices with quadrant cells, multielement arrays, differentwindows, lenses and optical filters are available upon request.Standard detectors are available in TO8 packages with wAl2O3 or wZnSeAR windows.Other packages, windows and connectors are also available.



@ λopt

D*cm⋅√Hz

W≥9.0×1011

≥7.0×1011≥7.0×1011

≥5.0×1011≥5.0×1011

≥3.0×1011≥1.0×1011

≥8.0×1010≥6.0×1010

≥3.0×1010≥5.0×109

≥3.0×109≥3.0×109

≥1.5×109


≥0.5 ≥0.8 ≥1 ≥1.3 ≥1.5 ≥1 ≥0.7


R·A Ω·cm2 ≥24000 ≥1500 ≥600 ≥30 ≥2.5 ≥0.04 ≥0.02




0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4









DescriptionThe PVI-4TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)feature four-stage thermoelectrical cooler IR phptpvoltaic detector, optically immersedto high refractive index GaAs hyperhemispherical (standard) or hemispherical or anyintermediate lens (as option) for different acceptance angle and saturation level.The devices are optimized for the maximum performance at λopt. Cut-on wavelengthcan be optimized upon request. Reverse bias may significantly increase speed ofresponse and dynamic range. It results also in improved performance at highfrequencies, but 1/f noise that appears in biased devices may reduce performance atlow frequencies. Highest performance and stability are achieved by application ofvariable gap HgCdTe semiconductor, optimized doping and sophisticated surfaceprocessing. Custom devices with quadrant cells, multielement arrays, differentwindows, lenses and optical filters are available upon request.Standard detectors are available in TO8 packages with wAl2O3 or wZnSeAR windows.Other packages, windows and connectors are also available.



@ λopt

D*cm⋅√Hz

W ≥1.0×1012

≥8.0×1011≥8.0×1011

≥7.0×1011≥6.0×1011

≥4.0×1011≥3.0×1011

≥1.0×1011≥6.0×1010

≥4.0×1010≥5.0×109

≥4.0×109≥4.0×109

≥2.0×109


≥0.5 ≥0.8 ≥1 ≥1.3 ≥1.5 ≥1.5 ≥0.7


R·A Ω·cm2 ≥30000 ≥2000 ≥800 ≥40 ≥3 ≥0.06 ≥0.05


*) Other Optimal Wavelengths available upon request.**) Data sheet states minimum guaranteed D* values for each detector model. Higher performance detectors can be provided upon request.***) Response which may be achieved at reverse bias (selected detectors upon request). Devices with faster response are availabe upon special request.


0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4





PVM Series8 – 11 μm IR PHOTOVOLTAIC

MULTIPLE JUNCTION DETECTORS

Example of D* vs Wavelength λ for PVM Series HgCdTe Detectors. Spectral Characteristicsof individual detectors may vary from those shown on the chart.

Features• Ambient temperature operation• No bias required• Short time constant• No flocker noise• Operation from DC to VHF• Perfect match to fast electronics• Wide dynamic range• Large area devices• Low cost• Prompt delivery• Custom design upon request

DescriptionThe PVM-λopt photodetectors series (λopt - optimal wavelength in micrometers) featureIR multiple junction photovoltaic detector.The devices are optimized for the maximum performance at λopt. Highest performanceand stability are achieved by application of variable gap HgCdTe semiconductor,optimized doping and sophisticated surface processing.Standard detectors are available in TO39 or BNC packages without windows. Variouswindows, other packages and connectors are available upon request.

IR Detector Specification @20°CParameter Symbol Unit PVM-8 PVM-10.6

Optimal Wavelength*) λopt µm 8 10.6Detectivity**):@ λpeak

@ λopt

D*cm⋅√Hz

W≥1.2×108

≥6.0×107≥2.0×107

≥1.0×107

Current Responsivity - Width Product @λopt 1×1mm

Ri·wA⋅mm

W≥0.008 ≥0.002

Time Constant τ ns ≤4 ≤1.5Resistance R Ω 50 to 300 20 to 150Operating Temperature T K ~300Acceptance Angle, F/# Φ, - deg, - >90, 0.71



0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4

PVM-8 O O X X O O X X X XPVM-10.6 O O X X O O X X X X

X – standard detectorsO – detectors available upon request, parameters may vary from these in Data Sheet



PVM-2TE Series8 – 11 μm IR PHOTOVOLTAIC

MULTIPLE JUNCTION DETECTORSTHERMOELECTRICALLY COOLED

Example of D* vs Wavelength λ for PVM-2TE Series HgCdTe Detectors. Spectral Characteristicsof individual detectors may vary from those shown on the chart.


DescriptionThe PVM-2TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)feature IR multiple junction photovoltaic detector on two-stage thermoelectrical cooler.The devices are optimized for the maximum performance at λopt, large area devices.Highest performance and stability are achieved by application of variable gap HgCdTesemiconductor, optimized doping and sophisticated surface processing. Customdevices with quadrant cells, multielement arrays, different windows, lenses and opticalfilters are available upon request.Standard detectors are available in TO8 packages with wZnSeAR windows. Otherpackages, windows and connectors are also available.

IR Detector Specification @20°CParameter Symbol Unit PVM-2TE-8 PVM-2TE-10.6


@ λopt

D*cm⋅√Hz

W≥6.0×108

≥3.0×108≥2.0×108

≥1.0×108


Ri·wA⋅mm

W≥0.015 ≥0.006

Time Constant τ ns ≤4 ≤3Resistance R Ω 150 to 600 100 to 350Operating Temperature T K ~230Acceptance Angle, F/# Φ, - deg, - 70, 0.87



0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4

PVM-2TE-8 O O X X O O X X XPVM-2TE-10.6 O O X X O O X X X




PVMI Series8 – 11 μm IR PHOTOVOLTAIC

MULTIPLE JUNCTION DETECTORSOPTICALLY IMMERSED

Example of D* vs Wavelength λ for PVMI Series HgCdTe Detectors. Spectral Characteristicsof individual detectors may vary from those shown on the chart.

Features• Ambient temperature operation• No bias required• Short time constant• No flocker noise• Operation from DC to VHF• Perfect match to fast electronics• Wide dynamic range• Low cost• Custom design upon request

DescriptionThe PVMI-λopt photodetectors series (λopt - optimal wavelength in micrometers) featureIR multiple junction optically immersed photovoltaic detector.The devices are optimized for the maximum performance at λopt. Highest performanceand stability are achieved by application of variable gap HgCdTe semiconductor,optimized doping and sophisticated surface processing.Standard detectors are available in TO39 or BNC packages without windows. Variouswindows, other packages and connectors are available upon request.

IR Detector Specification @20°CParameter Symbol Unit PVMI-8 PVMI-10.6


@ λopt

D*cm⋅√Hz

W≥6.0×108

≥3.0×108≥2.0×108

≥1.0×108


Ri·wA⋅mm

W≥0.04 ≥0.01

Time Constant τ ns ≤4 ≤1.5Resistance R Ω 50 to 300 20 to 150Operating Temperature T K ~300Acceptance Angle, F/# Φ, - deg, - 36, 1.62



0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4

PVMI-8 O O X XPVMI-10.6 O O X X




PVMI-2TE Series

8 – 11 μm IR PHOTOVOLTAICMULTIPLE JUNCTION DETECTORSTHERMOELECTRICALLY COOLED

OPTICALLY IMMERSED

Example of D* vs Wavelength λ for PVMI-2TE Series HgCdTe Detectors. Spectral Characteristicsof individual detectors may vary from those shown on the chart.

Features• High performance in the long wavelengths range without

LN cooling• Fast response• No flicker noise• Convenient to use• Wide dynamic range• Compact, rugged and reliable• Low cost• Prompt delivery• Custom design upon request

DescriptionThe PVMI-2TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)feature IR multiple junction optically immersed photovoltaic detectors on two-stagethermoelectrical cooler.The devices are optimized for the maximum performance at λopt. Highest performanceand stability are achieved by application of variable gap HgCdTe semiconductor,optimized doping and sophisticated surface processing. Custom devices with quadrantcells, multielement arrays, different windows, lenses and optical filters are availableupon request.Standard detectors are available in TO8 packages with wZnSeAR windows. Otherpackages, windows and connectors are also available.

IR Detector Specification @20°CParameter Symbol Unit PVMI-2TE-8 PVMI-2TE-10.6


@ λopt

D*cm⋅√Hz

W≥2.5×109

≥2.0×109≥1.5×109

≥1.0×109


Ri·wA⋅mm

W≥0.10 ≥0.05




0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4

PVMI-2TE-8 O O X XPVMI-2TE-10.6 O O X X




PVMI-3TE Series


OPTICALLY IMMERSED




DescriptionThe PVMI-3TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)feature IR multiple junction optically immersed photovoltaic detectors on three-stagethermoelectrical cooler.The devices are optimized for the maximum performance at λopt. Highest performanceand stability are achieved by application of variable gap HgCdTe semiconductor,optimized doping and sophisticated surface processing. Custom devices with quadrantcells, multielement arrays, different windows, lenses and optical filters are availableupon request.Standard detectors are available in TO8 packages with wZnSeAR windows. Otherpackages, windows and connectors are also available.



@ λopt

D*cm⋅√Hz

W≥4.0×109

≥3.0×109≥2.0×109

≥1.5×109


Ri·wA⋅mm

W≥0.15 ≥0.10




0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4





PVMI-4TE Series


OPTICALLY IMMERSED




DescriptionThe PVMI-4TE-λopt photodetectors series (λopt - optimal wavelength in micrometers)feature IR multiple junction optically immersed photovoltaic detectors on four-stagethermoelectrical cooler.The devices are optimized for the maximum performance at λopt. Highest performanceand stability are achieved by application of variable gap HgCdTe semiconductor,optimized doping and sophisticated surface processing. Custom devices with quadrantcells, multielement arrays, different windows, lenses and optical filters are availableupon request.Standard detectors are available in TO8 packages with wZnSeAR windows. Otherpackages, windows and connectors are also available.



@ λopt

D*cm⋅√Hz

W≥8.0×109

≥6.0×109≥2.5×109

≥2.0×109


Ri·wA⋅mm

W≥0.20 ≥0.15




0.025×0.025 0.05×0.05 0.1×0.1 0.2×0.2 0.25×0.25 0.5×0.5 1×1 2×2 3×3 4×4





INFRARED DETECTORSACCESSORIES



Preamplifier Series

VIP FIP BIP MIP PIP SIP QIP

Application standalone fast OEM STANDARDSTANDARD

programmableultra small four channel

Size large medium medium medium medium small mediumSpeed slow fast medium medium medium medium mediumIntegrated Detector ✘ ✔ ✔ ✔ ✔ ✔ ✔Cooled / Uncooled Detector ✘ /✔ ✔/✔ ✔/✔ ✔/✔ ✔/✔ ✔/✔ ✘ /✔4 channel ✘ ✘ ✘ ✘ ✘ ✘ ✔Tuned Gain ✘ ✘ ✘ ✘ ✔ option optionProgrammable Gain ✘ ✘ ✘ ✘ ✔ ✘ ✘Programmable Bandwidth ✘ ✘ ✘ ✘ ✔ ✘ ✘Additonal DC Output ✘ option on request on request ✘ ✘ ✘Page 44 47 51 55 59 63 67

TEC ControllersSTCC-04 ✘ ✔ ✔ ✔ ✘ ✔ ✘MTCC-01 ✘ ✔ ✔ ✔ ✘ ✔ ✘PTCC-01 ✘ ✔ ✔ ✔ ✔ ✔ ✘

Power SuppliesPPS-02 ✔ ✘ ✘ ✘ ✘ ✔ ✔PPS-03 ✔ ✘ ✘ ✘ ✘ ✔ ✔MPPS-01 ✔ ✔ ✔ ✔ ✘ ✔ ✔

CablesBNC-BNC ✔ ✘ ✘ ✘ ✘ ✘ ✘SMA-BNC ✘ ✔ ✔ ✔ ✔ ✘ ✘SMA-SMA ✘ ✔ ✔ ✔ ✔ ✘ ✘MMCX-BNC ✘ ✘ ✘ ✘ ✘ ✔ ✘MMCX-SMA ✘ ✘ ✘ ✘ ✘ ✔ ✘MCX-BNC ✘ ✘ ✘ ✘ ✘ ✘ ✔MCX-SMA ✘ ✘ ✘ ✘ ✘ ✘ ✔AMP2x4-DB9 ✘ ✘ ✔ ✘ ✘ ✔ ✔AMP2x4-DUBOX2x5 ✘ ✘ ✔ ✘ ✘ ✔ ✘AMP2x4-AMP2x4 ✘ ✘ ✔ ✘ ✘ ✔ ✘LEMO-DB9 ✘ ✔ ✘ ✔ ✔ ✘ ✘LEMO-DUBOX2x5 ✘ ✔ ✘ ✔ ✔ ✘ ✘LEMO-AMP2X4 ✘ ✔ ✘ ✔ ✘ ✘ ✘AMP1x6-MIC5 ✘ ✔ ✔ ✔ ✘ ✔ ✘AMP1x6-POWER ✘ ✔ ✔ ✔ ✘ ✔ ✘DB9-DB9 ✔ ✘ ✘ ✘ ✘ ✘ ✘DB9-4mmPLUGS ✔ ✘ ✘ ✘ ✘ ✘ ✘DB9-MIC5 ✔ ✘ ✘ ✘ ✘ ✘ ✘AMP2x4-MIC5 ✘ ✘ ✘ ✘ ✘ ✔ ✔KK2-POWER ✘ ✔ ✔ ✔ ✔ ✔ ✘USB:TypeA-MicroB ✘ ✔ ✔ ✔ ✔ ✔ ✘Power Cable EU ✔ ✔ ✔ ✔ ✘ ✔ ✘Power Cable UK ✔ ✔ ✔ ✔ ✘ ✔ ✘Power Cable US ✔ ✔ ✔ ✔ ✘ ✔ ✘

AC AdaptorsAC Adaptor ✔ ✔ ✔ ✔ ✔ ✔ ✔

Mechanical AccessoriesDRB-1 ✔ ✔ ✘ ✔ ✔ ✘ ✔DRB-2 ✔ ✔ ✘ ✔ ✔ ✘ ✔MP ✔ ✔ ✘ ✔ ✔ ✘ ✔PH ✔ ✔ ✘ ✔ ✔ ✘ ✔BP ✔ ✔ ✘ ✔ ✔ ✘ ✔STA-8x1-4 ✔ ✔ ✘ ✔ ✔ ✘ ✔MHS-1 ✘ ✘ ✔ ✘ ✘ ✘ ✘MHS-2 ✘ ✘ ✘ ✘ ✘ ✔ ✘MHS-3 ✘ ✘ ✘ ✘ ✘ ✘ ✔DH-BNC-1 ✔ ✘ ✘ ✘ ✘ ✘ ✘DH-BNC-2 ✔ ✘ ✘ ✘ ✘ ✘ ✘EL-1 ✘ ✘ ✘ ✔ ✔ ✘ ✘



VIP Series STANDALONE PREAMPLIFIER

Features• Compact size• High signal-to-noise ratio• Bandwidth up to 20 MHz• Dedicated to operate with uncooled detector in BNC package• Custom configurations upon request• Additional accessories available

Applications• Contactless temperature measurement• Laser radiation detection• Gas analysis• Fourier spectroscopy• Fire, flame and human body detection• Pyrometers, scanners • Nondestructive material testing

DescriptionVIP is the transimpedance, AC or DC coupled, standalone preamplifier.It is dedicated for operation with uncooled, no biasing IR detectors inBNC packages.

Preamplifier Specification

Parameter Symbol Unit Typical Value Conditions, Remarks

Input Noise Voltage Density ennV√Hz

0.97 – 8.01) fo = 100 kHz2)

Input Noise Current Density inpA√Hz

0.02 – 3.51) fo = 100 kHz2)

Low Cut-Off Frequency flo HzDC

10 to 10kDC coupling setAC coupling set

High Cut-Off Frequency fhi Hz 100k to 20M

Transimpedance KiVA

up to 1×105

Output Impedance Rout Ω 50

Output Voltage Swing Vout V±10±2±1

fhi ≤ 1 MHz,1 MHz < fhi ≤ 20 MHz,

20 MHz < fhi ≤ 250 MHz,

RL = 1 MΩ3)

RL = 1 MΩ3)

RL = 50 Ω3)

Output Voltage Offset Voff mV ≤20 DC and AC coupling set

Power Supply Voltage Vsup V±15±9

fhi ≤ 1 MHz1 MHz < fhi ≤ 20 MHz

Power Supply Current Isup mA ±25

Dimensions - mm×mm×mm 50×104×23.5 width×depth×height

Weight - g 260

Electrical characteristics @ Ta = 20 °C.

1) The preamplifier noise may significantly reduce the system performance in some situations. This happens for large capacitance detectors operating at high frequencies.2) f0 – noise measurement frequency3) RL – load resistance



VIP Series

Preamplifier Code Description

VIP-flo-fhi-P1

The preamplifier can be integrated with followingtypes IR detectors:

Detector Type Description

PV photovoltaic

PVI photovoltaic, optically immersed

PVM multiple heterojunction photovoltaic

PVMImultiple heterojunction photovoltaic,

optically immersed

Schematic Diagram

Power Supply Connector

Pin Number Symbol Function

1 N.C. not connected


3 GND power ground



6 –Vsup power supply input (–)



9 +Vsup power supply input (+)

DB9 Connector Male

Physical Dimensions [mm]

VIGO System S.A. 129/133 Poznanska St. 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: [email protected] 45Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO

From Detector Unit

SupplyRegulator

TransimpedancePreamplifier

VoltageAmplifier

EMIFilters

DB9Supply Connector

BNCOutput Connector

1 2 3 4 5

6 7 8 9

P1 – supply connector: S – standard H – pigtail cable

fhi – high cut-off frequency in Hz:

100k, 300k, 1M, 5M, 10M, 20M

flo – low cut-off frequency in Hz:

DC, 10, 100, 1k, 10k

VIP – preamplifier series V – Version, I – Current Input, P – Preamplifier


VIP Series

Recommended Accessories

PPS-02 PPS-03 MPPS-01 BNC-BNC DB9-DB9

Preamplifier Power Supply Preamplifier Power Supply Preamplifier Power Supply Signal Input or Output Cable Preamplifier Supply Cable

DB9-4mmPLUGS DB9-MIC5 AC Adaptor Power Cable EU Power Cable UK

Preamplifier Supply Cable Preamplifier Supply Cable Power Supply Adaptor Power Cable Power Cable

Power Cable US DRB-1 DRB-2 MP PH

Power Cable Base Mounting System Base Mounting System Mounting Post Post Holder

STA-8x1-4 DH-BNC-1

Special Thread Adapter Detector's Holder

VIGO System S.A. 129/133 Poznanska St. 05-850 Ozarow Mazowiecki, Poland, tel.: +48 22 733 54 10, fax: +48 22 733 54 26, email: [email protected] 46Please note: the information contained in the document is subject to change without further notification. VIGO System S.A. reserves the right to alter the performance and any resulting specifications. VS 13.01.17 KO


FIP Series FAST PREAMPLIFIER

Features• Compact size• Wide bandwidth up to 1GHz• Precise I-V conversion• Detector biasing possibility up to +800 mV• Low current noise• Co-operation with high-resistance detectors• Effective cooling up to 4-stage TE coolers

Applications• Laser technology• Fast laser pulse measurements• Telemetry• Sighting systems• Free space optics

DescriptionFIP is the high speed transimpedance, AC coupled preamplifier. It isdedicated for high speed infrared measurements.FIP preamplifier is designed for operation with either biased or non-biased TE cooled detectors.




1.11) fo = 100 kHz2)


51) fo = 100 kHz2)

Low Cut-Off Frequency flo Hz 1k, 10k 3 dB

High Cut-Off Frequency fhi Hz 1G 3 dB

Transimpedance KiVA

8.5×103


Output Voltage Swing Vout V ±0.8 RL = 50 Ω3)

Power Supply Voltage Vsup V+12-5

Power Supply Current Isup mA+100-50

no detector biasing

Dimensions - mm×mm×mm45×89.5×48.545×91×48.5

45×92.5×48.5

width×depth×height - with 2TEwidth×depth×height - with 3TEwidth×depth×height - with 4TE


1) The preamplifier noise may significantly reduce the system performance in some situations. This happens for large capacitance detectors operating at high frequencies.2) f0 – noise measurement frequency3) RL – load resistance



FIP Series


FIP-flo-fhi-P1-P2-P3



PC-2TE, PC-3TE, PC-4TE photoconductive

PCI, PCI-2TE, PCI-3TE,PCI-4TE

photoconductive,optically immersed

PV-2TE, PV-3TE, PV-4TE photovoltaic

PVI-2TE, PVI-3TE, PVI-4TEphotovoltaic,

optically immersed

PVM-2TE, PVM-3TE, PVM-4TEmultiple heterojunction

photovoltaic

PVMI-2TE, PVMI-3TE,PVMI-4TE

multiple heterojunctionphotovoltaic,

optically immersed

Symbol -2TE, -3TE, -4TE means 2, 3 or 4-stage TEC integrated with detector.

Schematic Diagram

Power Supply and TEC Control Connector

Pin number Symbol Function

1 FAN+ FAN (+)

2 TH2 thermistor output (2)

3 TEC– TEC supply input (–)


5 GND power ground


7 TEC+ TEC supply input (+)


9 DATA data pin

LEMO Connector Female


Detector Unit

IR Sensitive Area

Thermistor1)

TE-Cooler1)

DetectorBiasing2)

SupplyRegulator


VoltageAmplifier

EMIFilters

LEMOSupply & Control

Connector

SMA OutputConnector

1), Only for TE-cooled detectors2) Only for biased detectors

ConfigurationMemory

DATA

1

7 3

5

28

46

9

P3 – additional DC output: D – with output ND – no DC output

P2 – mounting hole: M4 – M4 mounting hole M8 – M8x1 mounting hole

P1 – package: F – with fan


1G


available options: 1k,10k

FIP – preamplifier series F – Version, I – Current Input, P – Preamplifier


FIP Series




FIP Series


PTCC-01-OEM PTCC-01-BAS PTCC-01-ADV STCC-04 MTCC-01

Programmable “Smart” TECController – OEM

Programmable “Smart” TECController – Basic

Programmable “Smart” TECController – Advanced

Standard TEC Controller Miniature TEC Controller

MPPS-01 SMA-BNC SMA-SMA LEMO-DB9 LEMO-DUBOX2x5

Preamplifier Power Supply Signal Output Cable Signal Output Cable TEC and Supply Cable TEC and Supply Cable

LEMO-AMP2x4 AMP1x6-MIC5 AMP1x6-POWER KK2-POWER USB: TypeA-MicroB

TEC and Supply Cable Power Supply Cable Power Supply Cable Power Supply Cable Cable for PC Connection

AC Adaptor Power Cable EU Power Cable UK Power Cable US DRB-1

Power Supply Adaptor Power Cable Power Cable Power Cable Base Mounting System

DRB-2 MP PH STA-8x1-4

Base Mounting System Mounting Post Post Holder Special Thread Adapter



BIP Series OEM PREAMPLIFIER

Features• Compact size• High signal-to-noise ratio• Bandwidth up to 250 MHz• Dedicated to operate with 2-, 3- and 4-stage TE cooled detectors• Custom modifications upon request• Additional accessories available

Applications• Contactless temperature measurement• Free space optical communication• Laser radiation detection• Gas analysis• Fourier spectroscopy• Fire, flame and human body detection• Pyrometers, scanners• Nondestructive material testing• OEM applicationsDescription

BIP is the transimpedance, AC or DC coupled preamplifier. It isdedicated for OEM applications and requires external heat sink (seeRecommended Accessories).BIP preamplifier is designed for operation with either biased ornon-biased TE cooled detectors.



Input Noise Voltage Density ennV

√Hz0.97 – 8.01) fo = 10 kHz2)

Input Noise Current Density inpA

√Hz0.02 – 3.51) fo = 10 kHz2)




Transimpedance KiVA

up to 2×105




20 MHz < fhi ≤ 250 MHz,

RL = 1 MΩ3)

RL = 1 MΩ3)

RL = 50 Ω3)

Output Voltage Offset Voff mV max ±204)


fhi ≤ 1 MHzfhi > 1 MHz

Power Supply Current Isup mA max ±50 no detector biasing

Dimensions - mm×mm×mm 45×80.5×25 width×depth×height - with 2TE, 3TE, 4TE


1) The preamplifier noise may significantly reduce the system performance in some situations. This happens for large capacitance detectors operating at high frequencies.2) f0 – noise measurement frequency3) RL – load resistance4) Measured with equivalent resistor at the input instead of the detector. It's to avoid the environmental thermal radiation's impact.



BIP Series


BIP-flo-fhi




PCI-2TE, PCI-3TE, PCI-4TEphotoconductive,

optically immersed



optically immersed


photovoltaic



optically immersed

Symbol -2TE, -3TE, -4TE means 2, 3 or 4-stage TEC integrated with detector.

Schematic Diagram





3 DATA data pin


5 GND power ground




AMP2x4 Connector Male


Detector Unit

IR Sensitive Area

Thermistor1)

TE-Cooler1)

DetectorBiasing2)

SupplyRegulator


VoltageAmplifier

EMIFilters

AMP2x4Supply & Control

Connector

SMAOutputConnector


ConfigurationMemory

DATA

2 4 6 8

7531


100k, 300k, 1M, 5M, 10M, 20M, 50M, 100M, 250M


DC, 10, 100, 1k, 10k

BIP – preamplifier series: B- Version, I – Current Input, P – Preamplifier


BIP Series




BIP Series







MPPS-01 SMA-BNC SMA-SMA AMP2x4-DB9 AMP2x4-DUBOX2x5


AMP2x4-AMP2x4 AMP1x6-MIC5 AMP1x6-POWER KK2-POWER USB: TypeA-MicroB


AC Adaptor Power Cable EU Power Cable UK Power Cable US MHS-1

Power Supply Adaptor Power Cable Power Cable Power Cable Additional Heat Sink



MIP Series MEDIUM SIZE PREAMPLIFIER

Features• Compact size• High signal-to-noise ratio• Bandwidth up to 250 MHz• Dedicated for operation with 2-, 3- and 4-stage TE cooled detectors• Custom configuration upon request• Additional accessories available

Applications• Contactless temperature measurement• Free space optical communication• Laser radiation detection• Gas analysis• Fourier spectroscopy• Fire, flame and human body detection• Pyrometers, scanners• Nondestructive material testing• OEM applications

DescriptionMIP is the transimpedance, AC or DC coupled preamplifier. It isdedicated for BenchTop applications. Package type F is equipped withfan and does not require additonal heat sink. Pacakage type NF requiresadditional heat dissipation (provided by user).MIP preamplifier is designed for operation with either biased or non-biased cooled detectors.




√Hz0.97 – 8.01) fo = 10 kHz2)


√Hz0.02 – 3.51) fo = 10 kHz2)




Transimpedance KiVA

up to 2×105




20 MHz < fhi ≤ 250 MHz,

RL = 1 MΩ3)

RL = 1 MΩ3)

RL = 50 Ω3)



fhi ≤ 1 MHzfhi > 1 MHz


Dimensions - mm×mm×mm

40×81.3×4040×82.8×4040×84.3×40


MIP package F

40×55.5×4040×57×40

40×58.5×40


MIP package NF

Electrical characteristics @ Ta = 20 ºC.

1) The preamplifier noise may significantly reduce the system performance in some situations.This happens for large capacitance detectors operating at high frequencies.2) f0 – noise measurement frequency3) RL – load resistance4) Measured with equivalent resistor at the input instead of the detector. It's to avoid the environmental thermal radiation's impact.



MIP Series


MIP-flo-fhi-P1-P2




PCI-2TE, PCI-3TE, PCI-4TEphotoconductive,

optically immersed



optically immersed


photovoltaic



optically immersed

Symbol -2TE, -3TE, -4TE means 2-, 3- or 4-stage TEC integrated with detector.

Schematic Diagram



1*) FAN+/GND FAN (+)/power ground




5 GND power ground




9 DATA data pin*) GND for MIP with package NF.



Detector Unit

IR Sensitive Area

Thermistor1)

TE-Cooler1)

DetectorBiasing2)

SupplyRegulator


VoltageAmplifier

EMIFilters


Connector

SMA OutputConnector


ConfigurationMemory

DATA

1

7 3

5

28

46

9


P1 – package: F – with fan NF – without fan


100k, 300k, 1M, 5M, 10M, 20M, 50M, 100M, 250M


DC, 10, 100, 1k, 10k

MIP – preamplifier series M – Version, I – Current Input, P – Preamplifier


MIP Series


MIP package F

MIP package NF



MIP Series




Programmable “Smart” TECControler – Basic

Programmable “Smart” TECControler – Advanced


MPPS-01 SMA-BNC SMA-SMA LEMO-DB9 LEMO-DUBOX2x5


LEMO-AMP2x4 AMP1x6-MIC5 AMP1x6-POWER KK2-POWER USB: TypeA-MicroB


AC Adaptor Power Cable EU Power Cable UK Power Cable US EL-1

Power Supply Adaptor Power Cable Power Cable Power Cable Accessory Lens with Mount

DRB-1 DRB-2 MP PH STA-8x1-4

Base Mounting System Base Mounting System Mounting Post Post Holder Special Thread Adapter



PIP Series PROGRAMMABLE ”SMART” PREAMPLIFIER

Features• Compact size• High signal-to-noise ratio• Dedicated for operation with 2-, 3- and 4-stage TE cooled

or uncooled detectors• Parameters settable by the user:▪ output voltage offset▪ gain (in 40 dB range)▪ bandwidth:

150 kHz, 1.5 MHz, 20 MHz1.5 MHz, 15 MHz, 200 MHz

▪ coupling AC/DC▪ detector parameters (in some cases, with limitation)

• Programmable modules and programmable controllersare interchangeable

• Highly flexible configuration allows the user to adaptthe module to variety of system parameters

• Additional accessories available

Applications• Contactless temperature measurement• Free space optical communication• Laser radiation detection• Gas analysis• Fourier spectroscopy• Fire, flame and human body detection• Pyrometers, scanners • Nondestructive material testing • OEM applications




0.95 fo = 10 kHz2)


4.51)

7.01)first stage transimpedance = 5 kΩfirst stage transimpedance = 1 kΩ

Low Cut-Off Frequency flo Hz DC/1k user configurable by software

High Cut-Off Frequency fhi Hz150k/1.5M/20M3)

1.5M/15M/200M3)maximum values, with limited range of detector

with „in circuit” filter activated

Transimpedance KiVA

250 – 25k1.25k – 125k

first stage transimpedace = 5 kΩfirst stage transimpedace = 1 kΩ


Output Voltage Swing Vout V ±1 with 50 Ω load applied

Output Voltage Offset Voff mVmax ±254)

max ±10DC coupling setAC coupling set

Power Supply Voltage Vsup V ±9

Power Supply Current Isup mAtyp ±80

max ±100

Dimensions - mm×mm×mm40×81.3×4040×82.8×4040×84.3×40


Operation Tempearture T °C +5...+35

Storage Temperature - °C -10...+50

Relative Humidity - % 10...90

Electrical characteristics @ Ta=20 °C.

1) The preamplifier noise may significantly reduce the system performance in some situations. This happens for large capacitance detectors operating at high frequencies.2) f0 – noise measurement frequency3) Depending on preamplifier option.4) Measured with equivalent resistor at the input instead of the detector. It's to avoid the environmental thermal radiation's impact.


Example Assembling(see: Recommended Accessories)


PIP Series

DescriptionPIP is the programmable “smart” preamplifier. Due to the moderninternal configuration, it offers extreme flexibility combined withsuperior signal parameters and high reliability. Included voltagemonitor allows user to check the working conditions (supply voltages,detector bias voltage, first and last stage output voltage offset etc.)• User may also immediately change the gain, coupling (AC/DC),optimize the first stage transimpedance (in terms of input noiseand overall bandwidth), reduce the bandwidth down to 1.5 MHz(for supressing wideband noise and convenient weak signalobservation), and also manually or automatically supress the voltageoffset.• The optimized parameters are immediately stored into the internalEEPROM memory and automatically loaded after the power is on.• Reset to the factory settings is always available, and followingthe manual, the operation and manipulation is both: easy and safe.• In some cases, detector biasing condition may be adjusted, however,for detector safety this function is blocked in factory by default.

OperationAfter turning on the controller, blinking LEDs, or splash screenare shown (depending on the version). The PTCC-01 controller probesthe version of IR module, and when PIP is found, the content of itsinternal memory is downloaded, and following the data, proper workingconditions are set: detector temperature, module supply voltage andabove mentioned preamplifier parameters. From the user point ofview: PTCC-01 informs of cooling down the detector indicated byblinking green LOCK LED, and when the valid temperature is reached,module supply is switched on and the IR detecting set is ready tooperate.• The intelligent controller and intelligent module together constantlyprobe the working conditions and, if any potential risk is recognized(overloading the supply or TEC lines, overheating the module, openingup the temperature stabilization loop etc.) the module is being shutdown, and ERROR LED is on.• For controlling the preamplifier parameters or performing a firmwareupdate, please use the PC software. Parameters may be controlledby using PTCC-01-ADV – no PC is then necessary.

WARNING! For proper operation, PIP preamplifier integrated with IRdetector should be connected to the PTCC-01 controller.


PIP-flo-fhi-P1-P2



PC, PC-2TE, PC-3TE, PC-4TE photoconductive

PCI, PCI-2TE, PCI-3TE, PCI-4TEphotoconductive,

optically immersed

PV, PV-2TE, PV-3TE, PV-4TE photovoltaic

PVI, PVI-2TE, PVI-3TE, PVI-4TEphotovoltaic,

optically immersed

PVM, PVM-2TE, PVM-3TE, PVM-4TEmultiple heterojunction

photovoltaic

PVMI, PVMI-2TE, PVMI-3TE, PVMI-4TEmultiple heterojunction

photovoltaic,optically immersed

Symbol -2TE, -3TE, -4TE means 2-, 3- or 4-stage TEC integrated with detector.No TE mark informs that the detector is not TE cooled.

Schematic Diagram


Detector Unit

IR Sensitive Area

Thermistor1)

TE-Cooler1)

DetectorBiasing2)

SupplyRegulator


VoltageAmplifier

EMIFilters


Connector

SMA OutputConnector


MicrocontrollerCPU

DATA


P1 – package: F – with fan


20M, 200M


DC/1k (user configurable by software)

PIP – preamplifier series P – Programmable, I – Current Input, P – Preamplifier


PIP Series



1 FAN+ FAN (+)




5 GND power ground




9 DATA data pin




1

7 3

5

28

46

9


PIP Series


PTCC-01-OEM PTCC-01-BAS PTCC-01-ADV SMA-BNC SMA-SMA




Signal Output Cable Signal Output Cable

LEMO-DB9 LEMO-DUBOX2x5 KK2-POWER USB: TypeA-MicroB AC Adaptor

TEC and Supply Cable TEC and Supply Cable Power Supply Cable Cable for PC Connection Power Supply Adaptor





SIP Series ULTRA SMALL PREAMPLIFIER

Features• Very small size• High signal-to-noise ratio• Bandwidth up to 250 MHz• Dedicated for opration with 2-, 3- and 4-stage TE cooled or uncooled

detectors• Biased and non-biased detector compatible• Adjustable gain (for bandwidth up to 100 MHz)• Fully protected against exceeding supply voltage and reversing

power supply polarity• Custom modifications upon request• Additional accessories available

SIP package TO39 SIP package TO8

DescriptionSIP is the ultra small transimpedance, AC or DC coupled preamplifier.It is dedicated for OEM applications and requires external heat sink (seeRecommended Accessories).

SIP is designed for operation with either biased or non-biased and eithercooled or uncooled detectors.

Applications• Contactless temperature measurement• Free space optical communication• Laser radiation detection• Gas analysis• Fourier spectroscopy• Fire, flame and human body detection• Pyrometers, scanners• Nondestructive material testing• OEM applications




√Hz0.97 – 8.01) fo = 10 kHz2)


√Hz0.02 – 3.51) fo = 10 kHz2)




Transimpedance KiVA

up to 1×105

Transimpedance RangeKi max

Ki min

- up to 5 dependent on the high cut-off frequency


Output Voltage Swing Vout V±10±1


RL = 1 MΩ3)

RL = 50 Ω3)



fhi ≤ 1 MHz1 MHz < fhi ≤ 250 MHz


Dimensions - mm×mm×mm27×44.5×2527×49.4×25

width×depth×height – SIP package TO39width×depth×height – with 2TE, 3TE, 4TE





SIP Series


SIP-flo-fhi-P1-P2



PC, PC-2TE, PC-3TE, PC-4TE photoconductive

PCI, PCI-2TE, PCI-3TE,PCI-4TE

photoconductive, opticallyimmersed

PV, PV-2TE, PV-3TE, PV-4TE photovoltaic

PVI, PVI-2TE, PVI-3TE,PVI-4TE

photovoltaic, optically immersed

PVM, PVM-2TE, PVM-3TE,PVM-4TE

multiple heterojunction photovoltaic

PVMI, PVMI-2TE, PVMI-3TE,PVMI-4TE

multiple heterojunctionphotovoltaic, optically immersed

Symbol -2TE, -3TE, -4TE means 2-, 3- or 4-stage TEC integrated with detector.

*) Available only for fhi to 100M.

Schematic Diagram




2*) TH2/N.C. thermistor output/not connected

3**) DATA/GND data pin/power ground

4*) TEC–/N.C. TEC supply input (–)/not connected

5 GND power ground

6*) TH1/N.C. thermistor output/not connected


8*) TEC+/N.C. TEC supply input (+)/not connected*) N.C for SIP-flo-fhi-TO39.

**) GND for SIP-flo-fhi-TO39.



Detector Unit

IR Sensitive Area

Thermistor1)

TE-Cooler1)

DetectorBiasing2)

SupplyRegulator


VoltageAmplifier

EMIFilters

AMP2x4Supply & Control

Connector

MMCX OutputConnector


ConfigurationMemory

DATA

2 4 6 8

7531

P2 – gain adjustment: G – with gain adjustment*)

NG – no gain adjustment

P1 – package: TO8 – for detectors with TO8 package TO39 – for detectors with TO39 package


100k, 300k, 1M, 5M, 10M, 20M, 50M, 100M, 250M


DC, 10, 100, 1k, 10k

SIP – preamplifier series S – Version, I – Current Input, P – Preamplifier


SIP Series



SIP package TO39

SIP packageTO8


SIP Series


PTCC-01-OEM PTTC-01-BAS PTCC-01-ADV STCC-04 MTCC-01





MPPS-01 PPS-02 PPS-03 MMCX-BNC MMCX-SMA

Preamplifier Power Supply Preamplifier Power Supply Preamplifier Power Supply Signal Output Cable Signal Output Cable

AMP2x4-DB9 AMP2x4-DUBOX2x5 AMP2x4-AMP2x4 AMP2x4-MIC5 AMP1x6-MIC5

TEC and Supply Cable TEC and Supply Cable TEC and Supply Cable Power Supply Cable Power Supply Cable

AMP1x6-POWER KK2-POWER USB: TypeA-MicroB AC Adaptor Power Cable EU

Power Supply Cable Power Supply Cable Cable for PC Connection Power Supply Adaptor Power Cable

Power Cable UK Power Cable US MHS-2

Power Cable Power Cable Additional Heat Sink



QIP Series FOUR CHANNEL PREAMPLIFIER

Features• Very small size• High signal-to-noise ratio• Bandwidth up to 100 MHz• Dedicated for operation with uncooled, quadrant geometry

detectors• Fully protected against exceeding supply voltage and reversing

power supply polarity• Custom configurations upon request• Additional accessories available

Applications• Laser beam positioning

DescriptionQIP is the four channel, transimpedance, AC or DC coupledpreamplifier. It is dedicated for BenchTop or OEM applications and,in some cases, requires external heat sink (see RecommendedAccessories).

QIP is designed to work with either biased or non-biased, uncooled ,quadrant geometry detectors.




√Hz0.97 – 8.01) fo = 10 kHz2)


√Hz0.02 – 3.51) fo = 10 kHz2)


1k, 10kDC coupling setAC coupling set


Transimpedance KiVA

up to 2×105


Output Voltage Swing Vout V ±1


Power Supply Voltage Vsup V ±9


Dimensions - mm×mm×mm 50×58.5×50 width×depth×height




Example Assembling(see: Recommended Accessories)


QIP Series


QIP-flo-fhi-P1



PCQ*) quadrant photoconductive

PVMQ quadrant multiple heterojunction photovoltaic*) Optical area 1x1mm and 2x2mm.

Schematic Diagram





3 GND power ground


5 GND power ground

6 N.C not connected





Detector Unit

IR Sensitive Area

DetectorBiasing*)

SupplyRegulator


VoltageAmplifier

EMIFilters

*) Only for biased detectors

AMP2x4Supply Connector

Four MCX OutputConnectors

2 4 6 8

7531



100k, 300k, 1M, 5M, 10M, 20M, 50M, 100M


DC, 1k, 10k

QIP – preamplifier series Q – Quadrant, I – Current Input, P – Preamplifier


QIP Series




QIP Series


MPPS-01 PPS-02 PPS-03 MCX-BNC MCX-SMA

Preamplifier Power Supply Preamplifier Power Supply Preamplifier Power Supply Signal Output Cable Signal Output Cable

AMP2x4-MIC5 AMP2x4-DB9 AC Adaptor Power Cable EU Power Cable UK

Power Supply Cable Power Supply Cable Power Supply Adaptor Power Cable Power Cable

Power Cable US DRB-1 DRB-2 MP PH

Power Cable Base Mounting System Base Mounting System Mounting Post Post Holder

STA-8x1-4

Special Thread Adapter



STCC-04 Series STANDARD TEC CONTROLLER

DescriptionThe STCC-04 is a standard thermoelectric cooler controllerwith ±0.01 ºC stability.The unit provides low noise power supply for integrated preamplifiers.

Features• Provides proper detector cooling• Preamplifier power supply included• Temperature lock indicator

TEC Controller Specification

Parameter UnitValue

Conditions, RemarksMin Typ Max

Temperature Stability K ±0.01 Tdet = 233 K (-40 °C)

Detector Temperature Settling Time s25

300300

Tdet = 233 K (-40 °C), ΔTdet = 0.1 °CTdet = 213K (-60 °C), ΔTdet = 0.1 °CTdet = 193 K (-80 °C), ΔTdet = 0.1 °C

Maximum Voltage AcrossTEC Element

V2.54.07.7

STCC-04-P1-2-P3-P4STCC-04-P1-3-P3-P4STCC-04-P1-4-P3-P4

Ripple of Output Current % 0.5 ITEC = 1 A

Output Current of the Built-In Power Supply

mA ±100STCC-04-09-P2-P3-P4STCC-04-15-P2-P3-P4

Power Supply Voltage Vsup V4.511.5

5.512.5

STCC-04-P1-2-P3-P4, STCC-04-P1-3-P3-P4STCC-04-P1-4-P3-P4

Power Supply Current Isup mA3A1A

STCC-04-P1-2-P3-P4, STCC-04-P1-3-P3-P4STCC-04-P1-4-P3-P4

Series Resistanceof the Connecting Cable

mΩ 1000total resistance of the wires supplying

TEC element

Dimensions mm×mm×mm 82×60.5×150 width×height×depth

Weight kg0.250.27

STCC-04-00-P2-P3-P4remaining models


TEC Controller Code Description

STCC-04-P1-P2-P3-P4


P4 – temperature of IR detector: P5 – 278 K, +5 °C 40 – 233 K, -40 °C 60 – 213 K, -60 °C 80 – 193 K, -80 °C

P3 – type of thermistor: C – NCP03XM222E05RL (standard) B – BR14KA132J-A (only for certain types of IR detectors) A – TB04-222 (only for certain types of IR detectors)

P2 – type of TE cooler: 2 – two - stage 3 – three - stage 4 – four - stage

P1 – preamplifier power supply: 00 – no power supply 09 – power supply ±9 V 15 – power supply ±15 V G1 – combined power supply (+12 V, -5 V) for FIP preamplifier

STCC-04 – cooler controller series S – Standard, T – Thermoelectric, C – Cooler, C – Controller, ver 04


STCC-04 Series


Power Supply and Control Connector DB9 Connector Female


1 TEC+ TEC supply output (+)

2 TEC– TEC supply output (–)

3 GND power ground

4 TH1 thermistor input (1)


6 –Vsup power supply output (–)

7 FAN+/GND FAN (+)/power ground


9 +Vsup power supply output (+)


AC Adaptor LEMO-DB9 AMP2x4-DB9 DB9-DB9

Power Supply Adaptor TEC and Supply Cable TEC and Supply Cable Supply Cable


5 4 3 2 1

9 8 7 6


MTCC-01 Series MINIATURE TEC CONTROLLER

DescriptionThe MTCC-01 miniature TEC controller is designed to controltemperature of 2- or 3-stage TE cooled IR detectors. MTCC-01 can beused with the Integrated Detector/Preamplifier Module BIP, MIP, SIPand FIP series. The target temperature is factory adjusted in range of205 to 255K.

Features• Compact size• Low cost• Easy to use• High stability• Low power consumption• Low noise, due to the linear

regulation based on output stage

Applications

• Temperature control of TE cooled IR detectors

• OEM applications

WARNING! The TEC controller is paired in the factory with the detector delivered in the IR set. Swapping controllers may cause malfunction ordamage of TEC and detector.


Parameter Unit Typical Value Conditions, Remarks

Temperature Stability K ±0.01

Settling Time of the Set DetectorTemperature

s6090

MTCC-01-2TE, Tdet = 233 K (-40 °C)MTCC-01-3TE, Tdet = 213 K (-60 °C)

Power Supply Voltage Vsup V2.6 to 5.54.0 to 5.5

MTCC-01-2TEMTCC-01-3TE

Maximum TEC Output Current ITEC A1.10.43

MTCC-01-2TEMTCC-01-3TE

Maximum TEC Output Voltage VTEC V 3.6

Dimensions mm×mm×mm 70×45×19 width×height×depth

Weight g 35Electrical characteristics @ Ta = 20 °C.

TEC Controller Code Description

MTCC-01-P1

Example Wiring Diagram


BIP, MIP, SIP, FIPIntegrated Preamplifier

MPPS-01Linear Power

Supply

SMA-BNCCable

AMP2x4-AMP2x4Cable

J1

J2

MTCC-01 TEC Controller

100..240VAC50..60Hz

To Oscilloscope

AMP1x6-MIC5Cable

P1 – number of TE cooler stages: 2TE – two - stage 3TE – three - stage

MTCC-01 – cooler controller series: M - Miniature, T - Thermoelectric, C - Cooler, C - Controller, ver 01


MTCC-01 Series


Power Supply and Control Connectors

AMP1x6 Connector Male (J1) AMP2x4 Connector Male (J2)


1 TECC+ TEC controller supply input (+)

2 TECC GND1) TEC controller power ground

3 +Vsup2), 3) power supply input (+)

4 GND1), 3) power ground

5 FAN+/N.C. FAN(+)/not connected

6 –Vsup2), 3) power supply input (–)

1) TECC GND and GND should be connected together in power adapter.2) See preamplifier specification for details.3) Only for preamplifier module supply, not required for proper controlleroperation.

For more details about TE cooling see Infrared Detectors DataSheets.

WARNING! Do not connect TEC– or TEC+ to any other supply orto GND!



2 TH21) thermistor input (2)

3 FAN+/N.C. fan supply/not connected


5 GND power ground

6 TH11) thermistor input (1)


8 TEC+ TEC supply output (+)1) Thermistor polarity without significance.


1 2 3 4 5 6

2 4 6 8

7531


MTCC-01 Series


MPPS-01 LEMO-AMP2x4 AMP2x4-AMP2x4 AMP1x6-MIC5 AMP1x6-POWER

Preamplifier Power Supply TEC and Supply Cable TEC and Supply Cable Power Supply Cable Power Supply Cable

Power Cable EU Power Cable UK Power Cable US

Power Cable Power Cable Power Cable



PTCC-01 PROGRAMMABLE ”SMART” TEC CONTROLLER

PTCC-01-OEM PTCC-01-BAS PTCC-01-ADVDescriptionPTCC-01 is the programmable, precision, low noise, thermoelectric cooler controller series, designed to operate with VIGO IR detection modules.It is compatible with both classic (BIP, MIP, SIP, FIP) and new, programmable PIP preamplifiers, integrated with IR detectors. Available options:

PTCC-01-OEM PTCC-01-BAS PTCC-01-ADV

• TEC controller and preamplifier power supplywithout housing

• Configurable by PC software available on webpage

• Status LED indicator and status/dataconnector

• TEC controller and preamplifier power supplyencapsulated in a small size enclosure

• Configurable by PC software available on webpage

• Status LED indicator

• TEC controller and preamplifier power supplyencapsulated in a small size enclosure

• Configurable by build-in function keys or PCsoftware available on web page

• Status LCD indicator

Features• Low cost• Easy to use• Very small size• Low power consumption• High stability and precision• Dedicated for opeartion with preamplifiers integrated with with 2-, 3-,

and 4-stage TE cooled detectors• Compatible with every variant of programmable preamplifier PIP;

user can swap the modules and controllers

• Modern architecture with digitally performed PID temperature control• Current / voltage / temperature monitor available with PC program• Overcurrent, overvoltage and overheating protection• Split grounds and filtering for EMC improvement• Firmware upgrade option available• Provides proper detector cooling• Preamplifier supply included


Parameter UnitValue

Conditions, RemarksMin Typ Max

Temperature Stability K ±0.01 Tdet = 233 K (-40 °C)

Temperature Readout Stability mK 1 Tdet = 213 K (-60 °C)

Detector Temperature Settling Time s254560

Tdet = 233 K (-40 °C),Tdet = 213 K (-60 °C),Tdet = 193 K (-80 °C),

ΔTdet = 0.1 KΔTdet = 0.1 KΔTdet = 0.1 K

Maximum TEC Current A1.2

0.450.45

2TE3TE4TE

Output Voltage Range V 3 14.5

Output Current of The Built-InPower Supply

mA ±200 output voltage: 3…14.5 V

Power Supply Voltage Vsup V 9 16 wider range available on demand

Power Supply Current Isup mA 500 ITEC = 0.45 A, UTEC = 7.5 V

Series Resistanceof the Connecting Cable

mΩ 1000total resistance of the wires supplying TEC

element

Dimensions mm×mm×mm51×17.3×93

55×24.2×111.868.9×30.4×107.8

width×height×depth - PTCC-01-OEMwidth×height×depth - PTCC-01-BASwidth×height×depth - PTCC-01-ADV

Weight g51155190

PTCC-01-OEMPTCC-01-BASPTCC-01-ADV

Storage Temperature °C -20 +70

Ambient Temperature °C +5 +45

Relative Humidity %1010

9050

from +5 °C to +35 °C> +35 °C




PTCC-01 Series


PTCC-01-OEM

PTCC-01-BAS

PTCC-01-ADV



PTCC-01 Series

Power Supply and Control Connector (PTCC-01-BAS and PTCC-01-ADV)




3 GND power ground




7 +5VFAN and programmable preampinternal logic auxiliary supply

8 DATA bidirectional data port


metal cover GND-SH shield

DB9 Connector Female

Power Supply and Control Connectors (PTCC-01-OEM)


1 TECC+ TEC controller supply input (+)

2 TECC GND TEC controller power ground

KK2 Connector Male




3 GND power ground



6 –Vsup tower supply output (–)

7 +5VFAN and PIP preamp internal

logic auxiliary supply

8 DATA bidirectional data port


10 GND-SH shield

DUBOX2x5 Connector Male

Status / DATA Connector (PTCC-01-OEM)


1 ERR – LED error indicator

2 LOCK – LEDtemperature control loop lock

indicator

3 SUP – LED module power supply on indicator

4 3.3 V auxiliary supply

5 TXD transmitted data (RS-232)

6 GND common (signal) ground (RS-232)

7 RXD received data (RS-232)


5 4 3 2 1

9 8 7 6

1 2

5 4 3 2 1

10 9 8 7 6

17 23456


PTCC-01 Series


AMP2x4-DB9 AMP2x4-DUBOX2x5 LEMO-DB9 LEMO-DUBOX2x5 KK2-POWER

TEC and Supply Cable TEC and Supply Cable TEC and Supply Cable TEC and Supply Cable Power Supply Cable

USB: TypeA-MicroB AC Adaptor

Cable for PC Connection Power Supply Adaptor



PPS-02 Series PREAMPLIFIER POWER SUPPLY

DescriptionThe PPS-02 preamplifier power supply is designed forsupplying VIGO System IR Detection Modules includeduncooled IR detectors.

Features• Dedicated for supplying uncooled detectors• Compact size• Easy to use• Low cost

Preamplifier Power Supply Specification

Parameter Unit Value Conditions, Remarks

Power Supply Voltage Vsup V AC 100 to 240 50 to 60 Hz

Output Voltage V DC±15±9

+12, -5

Output Current mA ±100


Weight kg 0.25Electrical characteristics @ Ta = 20 °C.

Preamplifier Power Supply Code Description

PPS-02-P1





3 GND power ground









5 4 3 2 1

9 8 7 6

P1 – power supply: 09 – power supply ±9 V 15 – power supply ±15 V G1 – combined power supply (+12 V, -5 V) for FIP preamplifier

PPS-02 – preamplifier power supply series P – Preamplifier, P – Power, S – Supply, ver 02


PPS-02 Series




Power Supply Adaptor Supply Cable Supply Cable Supply Cable



PPS-03 Series PREAMPLIFIER POWER SUPPLY

DescriptionThe PPS-03 preamplifier power supply is designed forsupplying VIGO System IR Detection Modules includeduncooled IR detectors.

Features• Dedicated for supplying uncooled detectors• Very small size• Low cost



Power Supply Voltage Vsup V AC 100 to 240 50 to 60 Hz


+12, -5



Weight g 100Electrical characteristics @ Ta = 20 °C.


PPS-03-P1





3 GND power ground









5 4 3 2 1

9 8 7 6


PPS-03 – preamplifier power supply series P – Preamplifier, P – Power, S – Supply, ver 03


PPS-03 Series




Power Supply Adaptor Supply Cable Supply Cable Supply Cable



MPPS-01 Series PREAMPLIFIER LINEAR POWER SUPPLY

DescriptionThe MPPS-01 preamplifier linear power supply isdesigned for supplying VIGO System IR DetectionModules included uncooled and cooled (operate withMTCC-01 controllers) IR detectors.

Features• Provides low noise preamplifier linear power supply• Dedicated for supplying uncooled and cooled IR

detectors• Easy to use



Power Supply Voltage Vsup V AC (100 ÷ 127) to (200 ÷ 240) 50 to 60 Hz


+12, -5


Dimensions mm×mm×mm 109×65×175 width×height×depth

Weight kg 1.3Electrical characteristics @ Ta = 20 °C.


MPPS-01-P1





3 GND power ground



MIC5 Connector Female


3

51

2 4


MPPS-01 – preamplifier power supply series M – Version, P – Preamplifier, P - Power, S - Supply, ver 01


MPPS-01 Series



AMP2x4-MIC5 LEMO-MIC5 AMP1x6-MIC5 Power Cable EU Power Cable UK

Power Supply Cable Power Supply Cable Power Supply Cable Power Cable Power Cable

Power Cable US

Power Cable



CABLES

BNC-BNC SMA-BNC SMA-SMA MMCX-BNC MMCX-SMA

Signal Input or Output Cable Signal Output Cable Signal Output Cable Signal Output Cable Signal Output Cable

MCX-BNC MCX-SMA AMP2x4-DB9 AMP2x4-DUBOX2x5 AMP2x4-AMP2x4

Signal Output Cable Signal Output Cable TEC and Supply Cable TEC and Supply Cable TEC and Supply Cable

LEMO-DB9 LEMO-DUBOX2x5 LEMO-AMP2x4 AMP1x6-MIC5 AMP1x6-POWER

TEC and Supply Cable TEC and Supply Cable TEC and Supply Cable Power Supply Cable Power Supply Cable

DB9-DB9 DB9-4mmPLUGS DB9-MIC5 AMP2x4-MIC5 LEMO-MIC5

Power Supply Cable Power Supply Cable Power Supply Cable Power Supply Cable Power Supply Cable

KK2-POWER USB: TypeA-MicroB Power Cable EU Power Cable UK Power Cable US

Power Supply Cable Cable for PC Connection Power Cable Power Cable Power Cable



AC ADAPTORS

AC Adaptor

Power Supply Adaptor

MECHANICAL ACCESSORIES



MHS-1 MHS-2 MHS-3 DH-BNC-1 DH-BNC-2

AVAILABLESOON

AVAILABLESOON

Additional Heat Sink Additional Heat Sink Additional Heat Sink Detector's Holder Detector's Holder

EL-1

Accessory Lens with Mount



DRB-1 BASE MOUNTING SYSTEM

DescriptionDRB-1 is a stable base mountig system dedicated forBench-Top IR Detection Modules and IR detectors in BNCpackages.

Features• Stable construction• Adjustable height• Durable, chrome plated elements

Specification

Parameter Value

Weight [g] 1390

Usable Height [mm] 108..178

Base Plate Diameter [mm] 120

Mounting Post Weight [g] 126

Thread M8x1 or 1/4-20 UNC


… ...



DRB-2 BASE MOUNTING SYSTEM

DescriptionDRB-2 is a stable base mountig system dedicated forBench-Top IR Detection Modules and IR detectors in BNCpackages.

Standard DRB-2 consists of:

• Base Plate BP• Mounting Post MP-100• Post Holder PH-100

IMPORTANT NOTE! If you require another dimensions ofMP or PH, please make remark in your formal purchaseorder.

Features• Stable construction• Adjustable height• Durable elements• Compatible with M6 optical breadboards


Example Assembling

Thread Adapter M4-M6TA-4-6

Post HolderPH

Base PlateBP

Mounting PostMP

Special Thread Adapter M8x1-M4STA-8x1-4 (optional)

Wing Knob M4WK-4


MP MOUNTING POST

DescriptionMP is a mounting post made of stainless steel.It is equipped with two thread adapters TA-4-6as a standard.

MP-50, MP-75 and MP-100 models are available.

Specification

Model Weight [g] Dimension A [mm]

MP-50 55 50

MP-75 85 75

MP-100 115 100


Mounting Post Thread Adapter M4-M6 (TA-4-6)


Example Assembling


PH POST HOLDER

DescriptionPH is a post holder made of black anodizedaluminium. It is equipped with wink knob WK-4as a standard.

PH-50, PH-75 and PH-100 models are available.

Specification

Model Weight [g] Dimension A [mm]

PH-50 35 50

PH-75 50 75

PH-100 60 100



Example Assembling


BP BASE PLATE

DescriptionBP is a base plate made of black, lacquered steel. It providesmechanical stable conditions for mounting system.

Weight: 1756g




STA-8x1-4 SPECIAL THREAD ADAPTER

DescriptionSTA-8x1-4 is a special thread adapter M8x1 to M4, made of stainlesssteel. It allows to install Detection Modules with M8x1 mounting holeand Detector's Holder DH-BNC-1 on Base Mounting System DRB-2.

Weight: 6g




WARRANTY

VIGO System S.A. hereby represents and warrants all Products manufactured by VIGO and sold hereunder to be free from defects in workmanshipor material during a period of twelve (12) months from the date of delivery save for products for which a special warranty is given. If any Productproves however to be defective in workmanship or material within the period herein provided VIGO System undertakes to the exclusion of any otherremedy to repair or at its own option replace the defective Product or part thereof free of charge and otherwise on the same conditions as for theoriginal Product or part without extension to original warranty time. Defective parts replaced in accordance with this clause shall be placedat the disposal of VIGO.

VIGO also warrants the quality of all repair and service works performed by its employees to products sold by it. In case the repair or service worksshould appear inadequate or faulty and should this cause malfunction or nonfunctioning of the product to which the service was performed VIGOshall at its free option either repair or have repaired or replace the product in question. The working hours used by employees of VIGO for suchrepair or replacement shall be free of charge to the client. This service warranty shall be valid for a period of six (6) months from the date the servicemeasures were completed.

This warranty is however subject to following conditions:• a substantiated written claim as to any alleged defects shall have been received by VIGO System within thirty (30) days after the defect or

fault became known or occurred,and

• the allegedly defective Product or part shall, should VIGO so require, be sent to the works of VIGO or to such other place as VIGO mayindicate in writing, freight and insurance prepaid, properly packed and labeled.

This warranty does not however apply when the defect has been caused through1. normal wear and tear or accident;2. misuse or other unsuitable or unauthorized use of the Product or negligence or error in storing, maintaining or in handling the Product or

any equipment thereof;3. wrong installation, assembly or failure to service the Product or otherwise follow VIGO's service instructions including any repairs or

installation or assembly or service made by unauthorized personnel not approved by VIGO or replacements with parts not manufacturedor supplied by VIGO;

4. modifications or changes of the Product as well as any adding to it without VIGO's prior authorization;5. burned active element by irradiation above damage thresholds;6. electrostatic discharges;7. improper detector bias;8. improper TE cooler bias (TE cooler damage or active element overheating);9. other factors dependent on the Customer or a third party.

Notwithstanding the aforesaid VIGO System liability under this clause shall not apply to any defects arising out of materials, designs or instructionsprovided by the Customer.

This warranty is expressly in lieu of and excludes all other conditions, warranties and liabilities, expressed or implied, whether under law, statute orotherwise, including without limitation any implied warranties of merchantability or fitness for a particular purpose and all other obligations andliabilities of VIGO or its representatives with respect to any defect or deficiency applicable to or resulting directly or indirectly from the Productssupplied hereunder, which obligations and liabilities are hereby expressly canceled and waived. VIGO's liability shall under no circumstances exceedthe invoice price of any Product for which a warranty claim is made, nor shall VIGO in any circumstances be liable for lost profits or otherconsequential loss whether direct or indirect or for special damage.

RMA Request Instructions: • No Product may be returned without first contacting VIGO for a Return Material Authorization ('RMA') number.• Please obtain a RMA number from VIGO Support Team before returning any item. When requesting a RMA number, please state your

order number, the product you wish to return and the reason for return. We will only accept returns which have an RMA number.Authorized returns are to be shipped according to received instruction from VIGO in appropriate shipping box. An unauthorized return, i.e.one for which an RMA number has not been issued and authorized returns however, shipped with incorrect customs documents - will notbe accepted.

• Please print the RMA number clearly on the return label to avoid any delay in processing. Please send package to:

VIGO System S.A.Sales Office, Building B129/133 Poznanska St.

05-850 Ozarow MazowieckiPOLAND



CONTACT AND DISTRIBUTORS

Find Our Products in Your CountryTo find our representative in your local area, please check the table below. If you do not find a Distributor listed in your country, please contact usdirectly:

VIGO System S.A.129/133 Poznanska Str.05-850 Ozarow MazowieckiPOLANDtel.: +48 22 733 54 06fax: +48 22 733 54 26email: [email protected]://www.vigo.com.pl

CHINA CHINA FRANCE

BIT Photoelectronic Co., Ltdtel.: +86 10 6891 3630fax: +86 10 6847 0197

email: [email protected]://www.bitpe.com

Uniqueray Technologies Limitedtel.: +86 755 2333 9831fax: +86 755 2333 9831mobile: +86 180 3808 5221email: [email protected]

ACAL BFI FRANCEtel.: +33 (0) 1 60 79 59 30fax: +33 (0) 1 60 79 89 01

email: [email protected]

GERMANY ISRAEL ITALY

DoroTEK GmbHtel.: + 49(0)3341 21 54 27fax: 49(0)3341 21 54 29

email: i [email protected]://www.dorotek.de

Bi-Poltel.: +972 525 877 759


Massimo Bonfantetel.: +39 02 36 52 46 30fax: +39 02 99 98 12 25mobile: +39 335 82 22 917email: [email protected]://www.masbonfante.it

JAPAN JAPAN MEXICO & COLOMBIA

FIT Leadintex, Inc.tel.: +81 3 3666 7100fax: +81 3 3666 7007

email: [email protected]://www.fit-leadintex.jp

IR System Co., Ltd.tel.: +81 42 400 0373fax: +81 42 400 0374 email: [email protected]

Mexitek, S.A. tel.: +52 55 5575 0312


NETHERLANDS UNITED KINGDOM USA & CANADA

Jonat Automation B.V.tel.: +31 (0)13 571 16 26fax: +31 (0)13 571 55 88mobile: +31 (0)6 24 802 956email: [email protected]://www.jonat.com

Photonic Solutions, LTdtel: +44 (0)131 664 8122fax: +44 (0)131 449 7301

email: [email protected]://www.photonicsolutions.co.uk/

Boston Electronics Corporationtel.: (617) 566 3821fax: (617) 731 0935

email: [email protected]://www.boselec.com

Would You Like To Be Our Distributor?In order to increase our presence in the global market, we are looking for prospective partners for distribution of our products. For more information, please contact us.





http://www.boselec.com/


http://www.photonicsolutions.co.uk/


http://www.jonat.com/



http://www.irsystem.com/


http://www.fit-leadintex.jp/


http://www.masbonfante.it/


http://www.bi-pol.com/


http://www.dorotek.de/



http://www.acalbfi.com/


http://www.uniqueray.com/


http://www.bitpe.com/


http://www.vigo.com.pl/



Appendix



UNIT: mmGENERAL TOLERANCE:

X.X=±0.1 / X.XX=±0.05

18-Jul-16

TITLE:Detector TO8 - XTE

SIZE

A4

DWG NO:

DT-TO8-XTE.003SCALE:

WEIGHT:

SHEET 1 OF 12:1

Date:No.

123

4

5

6

7

NameTO8 housing

Detector case

Absorber container

Detector cap

Window

Detector on sapphire pad

Thermo-electic cooler

7u1 g

Material

Gold plated Kovar

Stainless steelStainlesl steel

Stainless steel

Al2O3 / ZnSe / other

HgCdTe / GaAs / Sapphire

8 4-40 UNC A2 screw

The drawings and the information provided with the drawings are the soleproperty of VIGO System S.A. Any disclosure or reproduction, in part or whole,without the written permission of VIGO System S.A. is prohibited.

VIGO System's detectors contains miniature amounts of mercury and cadmium butas part of medical devices, monitoring and control instruments can be treated asan exempt from the UE Directive on the Restriction of Hazardous Substances (RoHS).

Production Department

15.2 ±0.2O6O

7.8

±0.3

6.4

±0.4

A

B

C

0.45O

F

4-40 UNC

5.08

10.16

5.08

10.16

11

12

10

9

123

4

5

6 7 8

FOV

1

2

3

45

6

7

Two-stage thermoelectric cooler - 2TELens shape Hyperhemisphere Hemisphere Flat

Detector optical area [mm²] 0.5x0.5 1x1 2x2 3x3 0.5x0.5 - 3x3 0.01x0.01 - 4x4

R [mm] 0.5 0.8 1.25 1.6 0.5-1.6 infity

A [mm] 4.1±0.3 3.2±0.3 1.85±0.3 0.8±0.3 5.6±0.3 5.6±0.3

B [mm] 5.6±0.3 5.6±0.3 5.6±0.3 5.6±0.3 5.6±0.3 5.6±0.3

C [mm] 11±0.3 11±0.3 11±0.3 11±0.3 11±0.3 11±0.3

FOV ~36° ~36° ~36° ~36° ~70° ~70°

Three-stage thermoelectric cooler - 3TELens shape Hyperhemisphere Hemisphere Flat


R [mm] 0.5 0.8 1.25 1.6 0.5-1.6 infity

A [mm] 5.7±0.35 4.8±0.35 3.45±0.35 2.4±0.35 7.2±0.35 7.2±0.35

B [mm] 7.2±0.35 7.2±0.35 7.2±0.35 7.2±0.35 7.2±0.35 7.2±0.35

C [mm] 12.4±0.3 12.4±0.3 12.4±0.3 12.4±0.3 12.4±0.3 12.4±0.3

FOV ~36° ~36° ~36° ~36° ~70° ~70°

Four-stage thermoelectric cooler - 4TELens shape Hyperhemisphere Hemisphere Flat


R [mm] 0.5 0.8 1.25 1.6 0.5-1.6 infity

A [mm] 7.3±0.4 6.4±0.4 5±0.4 4±0.4 8.8±0.4 8.8±0.4

B [mm] 8.8±0.4 8.8±0.4 8.8±0.4 8.8±0.4 8.8±0.4 8.8±0.4

C [mm] 14±0.3 14±0.3 14±0.3 14±0.3 14±0.3 14±0.3

FOV ~36° ~36° ~36° ~36° ~70° ~70°

45°0.8

0.8

8

Pin outSignal 1 and 3Thermistor 7 and 9TE Cooler Supply 2(+) and 8(-)Chassis Ground 11not used 4, 5, 6, 10, 12

A - Distance from the bottom of the TO8 package to the focal plane


X.X=±0.1 / X.XX=±0.05

18-Jul-16

TITLE:Detector TO39 3 pin

SIZE

A4

DWG NO:

DT-TO39.003SCALE:

WEIGHT:

SHEET 1 OF 1

Production Deparment

2:1

Date:No.

123

NameTO39 housing

Detector cap


3u1 g


Material

Gold plated KovarBrass



8.4O

5.5O

9.2O

4.713

.5

0.45O

3

2

1

R

0.4

FOV

5.08

O

45°

0.8

0.9

A

B

2

1

3

Lens shape Hyperhemisphere Hemisphere Flat


R [mm] 0.5 0.8 1.25 1.6 0.5-1.6 infity

A [mm] 1.5±0.2 2.4±0.2 3.75±0.2 4.8±0.2 0 0

B [mm] 1.9±0.2 1.9±0.2 1.9±0.2 1.9±0.2 1.9±0.2 1.9±0.2

FOV ~36° ~36° ~36° ~36° ~90° ~90°

Pin outSignal 1(+) and 2(-)Chassis Ground 3


X.X=±0.1 / X.XX=±0.05

18-Jul-16

TITLE:Detector BNC

SIZE

A4

DWG NO:

DT-BNC.004SCALE:

WEIGHT:

SHEET 1 OF 1

Production Deparment

2:1

Date:No.

123

4

NameBNC connector - may vary from shown in drawing

Detector case

Detector cap


25 u1 g

Material

Copper covered with Cr-Ni


Copper covered with Cr-Ni



13O

27.7

±0.2

10.5

±1

40±1

AB

FOV

R

1

2

34

Lens shape Hyperhemisphere Hemisphere Flat


R [mm] 0.5 0.8 1.25 1.6 0.5-1.6 infity

A [mm] 4.6±0.3 5.5±0.3 6.85±0.3 7.9±0.3 3.1±0.3 1.6±0.3

B [mm] 3.1±0.15 3.1±0.15 3.1±0.15 3.1±0.15 3.1±0.15 1.6±0.15

FOV, C=Ø4 [mm] ~36° ~36° ~36° ~36° ~66° ~102°

FOV, C=Ø6 [mm] ~36° ~36° ~36° ~36° ~88° ~124°

C


X.X=±0.1 / X.XX=±0.05

18-Jul-16

TITLE:Detector PEM

SIZE

A4

DWG NO:

DT-PEM.006SCALE:

WEIGHT:

SHEET 1 OF 12:1

Date:No.

123

4

5

6

NamePEM handle

Detector housing

Detector cap

Window


SMA connector

25u1 g

Material

Black anodized Al

Black anodized SteelBlack anodized Al

ZnSe / other


Gold coated brass / PTFE



Production Department

12.8

±0.2

24O

5O

22.8

±0.2

13O

6.4

21.9 ±0.3

10O

8

6.9

±0.2

1

2

35

6

4

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