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    Capacitive Sensing Solutions from

    Silicon Labs

    In this section, we are going to cover the Silicon Labs Capacitive Sensing solutions.

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    2

    Agenda

    What are we measuring?

    Capacitance measurement techniques

    Relaxation oscillator operation

    SAR operation

    CapSense system considerations

    C8051F93x-92x implementation

    C8051F700 implementation

    Tools to aid in capacitive sensing development

    Where to learn more

    We are going to cover Capacitive Sensing technology starting with an overview of

    how CapSense works. Next we will cover how the technology is implemented in

    the C8051F900 family and the different pad topologies. We will also cover some of

    the tools available for the technology.

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    3

    What Are We Measuring?

    Capacitance If two metal plates are placed with a gap between them and a voltage is applied to one of

    the plates, an electric field will exist between the plates

    Any two conductive objects can be used for the plates of the capacitor

    When using capacitive sensing for touch applications the capacitor is typically formed bya PCB element and the conductive object in proximity

    Capacitor parameters Area capacitance is directly proportional to the area of the plates

    Dielectric capacitance is directly proportional to the relative permittivity of the materialbetween the plates (air, glass, plastic, etc.)

    Distance capacitance is indirectly proportional to the distance between the two plates

    The capacitance of a parallel-plate capacitor is given by:

    where:

    0 is the permittivity of free spacer is the relative permittivity of the dielectric material

    A is the area of the plates

    D is the distance between the plates

    dDielectric

    Capacitor

    plates

    A

    V

    When using capacitive sensing for touch applications the PCB trace typically acts as

    one plate of the capacitor. When a conductive object (such as a finger for touch

    sensing) comes into proximity it acts as the other plate and air is the dielectric. As

    the object moves closer to the pad the capacitance changes based on the equation

    for capacitance shown. The constants in the equation represent the value for the

    dielectric constant of the material, i.e. air, glass etc. The value for A is a measure ofthe area of the pad used for the sensor capacitor and d represents the distance

    between the two plates. So you can see, for touch applications, as the finger moves

    closer to a pad the value for d is reduced which then increases the capacitance.

    ris the relative static permittivity (sometimes called the dielectric constant) of the

    material between the plates

    A is the area of each plate

    D is the separation between the plates.

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    4

    Capacitive Sensing Technology

    What are capacitive sensing switches?

    They are external capacitors that are influenced bythe presence of conductive objects such as a finger

    They are also known as contact-less switches

    Why are they useful?

    Make it possible to revolutionize a products userinterface and industrial design

    Low-cost because the switch is as simple as a traceon a PCB

    No moving components means long-term reliability

    Target applications

    Handsets

    Notebooks

    Personal media players

    White goods

    Automotive Medical

    Industrial

    Touch sensitive switches

    Traditional push-button switches

    Touch sensitive switches are found in a variety of consumer products including home

    appliances, MP3 players and cell phones. A touch sensitive switch is a switch that is

    implemented as a trace on a printed circuit board. The architecture of the trace creates a

    capacitive element. Touching this trace with a finger creates a change in capacitance, which

    is detectable using a variety of techniques. Capacitive sensing has received a lot of attention

    lately due to the fact that it can replace mechanical switches that have a tendency to wearout and break. Capacitive Sensing switches can be as simple as a trace on a PCB that forms

    one plate of a capacitor and an object that is in close proximity to the pad represents the

    other plate. With respect to human interface it is often a persons finger that becomes the

    second plate of the capacitor. When a persons finger moves closer to the pad the

    capacitance changes inversely with the distance. As the distance between the finger and the

    pad decreases the capacitance increases. We can use several measurement techniques to

    quantify the capacitance and provide a pressed or not pressed button state.

    There are many applications for this technology, not just switches although that is probably

    the most common. Industrial Applications can take advantage of capacitive sensing. Thereare many industrial applications where detection can be done using a capacitive sensor, such

    as detection of the water level in a tank.

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    The Relaxation Oscillator (RO)

    How a relaxation oscillator works Charge a capacitor until it reaches a certain voltage threshold

    Once the threshold is reached, discharge the capacitor until itreaches a lower threshold

    The frequency of the relaxation oscillator is indirectly proportional tothe value of the capacitor

    C > Inactive Capacitance

    C = Inactive Capacitance

    Here we will take a closer look at the relaxation oscillator method. As mentioned on the

    previous slide, the relaxation oscillator method builds an oscillator which uses the sensor

    capacitor as a timing element. The diagram shows the relationship of the comparator

    reference voltages and the output waveform. The reference voltages used for the

    comparisons in this example are the 2/3 and 1/3 VDD points. The exponential voltage rise

    occurs from the 1/3VDD point and continues to the 2/3VDD point. At that point thecomparator output toggles and causes a change in current flow. This change causes the

    voltage to decay back down to the 1/3VDD point and then the cycle repeats. We will take a

    look at this cycle in more detail in some of the following slides. Using this method the

    oscillation period is inversely proportional to the sensor capacitor value. As capacitance

    increases the oscillator frequency decreases.

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    7

    Charge Timing Using SAR

    How the successive approximation technique works Drive a current through the sensor capacitor and compare the

    generated voltage potential to the voltage of a reference capacitorwith a known ramp rate

    Successive comparisons modify the current value in order toprovide equivalent ramp rates for the ISENSOR and the IREF

    Silicon Labs patent pending approach

    ISENSORIREF

    MSB Bit Decision

    (Bit 15)

    LSB Bit Decision

    (Bit 0)

    V

    t

    The SAR implementation is based on the principle of capacitance that as you source a

    constant current then the voltage output will increase over time. This is based on the

    equation dV = I/C dt. The comparison point of the generated voltage is set to a constant

    voltage over all cycles. This constant voltage is also used as the reference point for the

    charge time of a reference capacitor. When all bit values have been determined the ramp

    rate of the sensor capacitor will be equal to that of the reference capacitor.

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    Relaxation Oscillator (RO)

    Implementation

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    RO Capacitive Sensing Implementation (1 of 3)

    When the positive input is configured to generate the

    threshold voltage levels, the comparator output is 1 when

    the positive input terminal (CP+) is greater than the negativeinput terminal (CP-) and 0 when CP- is greater than CP+

    The next several slides show how the relaxation oscillator actually works. The slides

    describe the inactive state behavior of the relaxation oscillator. By inactive state we mean

    that a finger is not moved on or off the switch, and so the capacitance of the switch is the

    same.

    In this configuration, the output of the comparator is 1 when the positive input is greater

    than the negative input. In the initial state, we can assume the capacitor is at 0V or less than

    2/3 VDD. The comparator output is then logic 1 or VDD. This has two effects: 1) the

    resistor network gets simplified to what is shown on the right and this sets the threshold to

    2/3 VDD, which is shown in blue in the graph. 2) The switch capacitor is charged by the

    output of the comparator through the feedback resistor. This is shown by the red line in the

    graph.

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    RO Capacitive Sensing Implementation (2 of 3)

    When the positive input is configured to generate the

    threshold voltage levels, the comparator output is 1 when

    CP+ > CP-, and 0 when CP- > CP+

    Once the voltage on the capacitor gets charged to 2/3 VDD, the output comparator becomes

    logic 0, which has two effects. 1) The resistor network gets simplified to what is shown on

    the top right and the positive input is changed to 1/3 VDD. 2) The capacitor, which is

    charged to 2/3 VDD, now starts discharging through the feedback resistor.

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    RO Capacitive Sensing Implementation (3 of 3)

    When the positive input is configured to generate the

    threshold voltage levels, the comparator output is 1 when

    CP+ > CP-, and 0 when CP- > CP+

    The final step of the cycle is the same as the first. Once the voltage on the switch capacitor

    reaches 1/3 VDD, the output of the comparator switches to logic 1 or VDD, which starts the

    charge process again. This repetitive scenario gives us our oscillation frequency based on

    the value of the RC time constant of the feedback resistor and the sensor capacitor we are

    trying to measure.

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    12

    Putting Your Finger on the Switch

    By touching the switch directly with a finger the capacitance increases

    The rise and fall time of a parallel-plate capacitor is given by:

    The additional capacitance increases the time constant, thereby

    reducing the output frequency

    RC

    When using Capacitive Sensing the PCB trace acts as one plate of the capacitor.

    When a finger comes into proximity it acts as the other plate and air is the dielectric.

    As the finger moves closer to the pad the capacitance changes based on the equation

    for capacitance shown. The constants in the equation represent the value for the

    dielectric constant of the material, i.e. air, glass etc. The value for A is a measure of

    the area of the pad used for the sensor capacitor and d represents the distancebetween the two plates. So you can see as the finger moves closer the value for d is

    reduced which then increases the capacitance. Keeping in mind the relaxation

    oscillator operation from the previous slides we noted that as capacitance increases

    the frequency of oscillation decreases.

    ris the relative static permittivity (sometimes called the dielectric constant) of the

    material between the plates

    A is the area of each plate

    D is the separation between the plates.

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    How to Detect the Change

    There are two ways to measure the change in frequency

    Measure the frequency

    Count the number of relaxation oscillator cycles over a fixed period of time

    Measure the period

    Count the number of system clock cycles over a fixed number relaxation cycles

    The example code installed with the IDE counts the system clock cycles during one

    relaxation oscillator cycleInactive State

    Finger On the Pad

    There are two ways to measure the change in the relaxation oscillator frequency. There is a calibration step that needs to be

    performed first in order to measure a count value with no finger present on the pad. This would be considered the idle, steady

    or inactive state. The first measurement technique uses two timers. The first timer is clocked by the relaxation oscillator (RO

    timer) and the second is used to generate the fixed time base (Fixed Timer). At the overflow of the Fixed Timer the value of

    the RO Timer value is read. If the RO Timer value is less than the inactive state value from a calibration then it is determined

    that there is a valid button press. When measuring theperiod we use a timer that is clocked by the system clock (System

    Timer). The comparator output in this case is used to provide a capture event. The captured value is compared to a calibrated

    value and if the system clock counts are higher then the capacitance is greater causing the capture period to be longer, thus

    allowing more system clocks. When this condition exists it is considered to be a valid button press. With the relaxation

    oscillator solution, this is the minimum amount of cycles we can count and still get an accurate results. We cannot use a

    sampling period shorter than 1 relaxation oscillator cycle and achieve repeatable measurements.

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    Charge Timing Implementation

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    Successive Approximation (CS Module)

    Two current DACs used

    First is the variable DAC for the current through the sensor capacitor

    The second is a constant current source for the internal referencecapacitor

    Two comparators are used

    First monitors the voltage of the sensor capacitor

    The second monitors the voltage of the internal reference capacitor

    The outputs of the comparators determine the logic level of the

    associated bit

    ISENSORIREF

    CSENSOR

    VREF SARCREF

    The successive approximation (SAR) method uses a pair of current sources to drive current

    into separate capacitors. The first is the reference capacitor denoted as CREF and the other is

    CSENSOR. The current source denoted as IREF is a fixed current used to drive the CREFcapacitor to provide a constant ramp voltage. The second current source denoted ISENSORsources a variable current to the sensor capacitor. After each measurement cycle the SAR

    logic will change the value of ISENSOR, attempting to get the ramp rate the same as thereference capacitor.

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    16

    Putting Your Finger on the Switch

    By touching the switch directly with a finger the capacitance increases

    The change in voltage of a parallel-plate sensor capacitor is derived from the

    current of the capacitor given by:

    This additional capacitance reduces the voltage potential of the sensor capacitor

    at a given current

    Inactive Switch

    Active Switch

    Charge Time

    dtC

    IdV

    SENSOR

    SENSOR

    dt

    dVCI SENSORSENSOR

    or

    As with the relaxation oscillator, when using Capacitive Sensing the PCB trace acts

    as one plate of the capacitor. When a finger comes into proximity it acts as the

    other plate and air is the dielectric. As the finger moves closer to the pad the

    capacitance changes based on the equation for capacitance from the earlier slides.

    Keeping in mind that as a finger moves closer the value for d is reduced which then

    increases the capacitance. Keeping in mind the SAR operation from the previousslides we note that as capacitance increases the comparison point for the threshold

    voltage decreases.

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    Successive Approximation

    Decision tree based on binary weighted voltages. Start the first comparison at the mid-scale voltage IREF/2 (for 16 bit

    conversion IREF=0x8000)

    Determine MSB value based on the timing of the capacitors VSENSOR > VREF then MSB = 0

    VSENSOR < VREF then MSB = 1

    Set the next comparison voltage to the next comparison value If the bit was a 1 IREF=0xC000 If the bit was a 0 IREF=0x4000

    Continue process through all 16 bits

    ISENSOR

    IREF

    Bit 15 = 0

    IREF Charge Time

    Current value for

    ISENSOR = 0x8000 Current value for

    ISENSOR = 0x4000

    Bit 14 = 1

    Current value for

    ISENSOR= 0x6000

    Bit 13 = 0Bit 0 = 0

    Total Sample Time < 50us

    Lets take a closer look at the successive approximation steps in determining the value of

    the ISENSOR source. The SAR will set the current source to the mid-scale and drive the

    ramp until the timeout period expires as governed by the reference capacitor charge time.

    Mid-scale for the 16 bit current source is 0x8000. At this point the voltages are compared.

    If the sensor capacitor has charged to a value that is greater than the reference as shown in

    the figure then there was too much current and the MSB value is then set as a zero(conversely, if the current did not reach the threshold then that means there wasnt enough

    current and the MSB is then set to a one). Since the previous bit was set low the next

    weighted bit is set to the a value lower and half of the setting or at 0x4000. The charge

    cycle is started again and the voltages are once again compared. In the example above we

    see that with this new value the voltage didnt make it to the threshold point meaning we

    need to supply more current to the sensor capacitor. This bit is then set as a one and the

    next value is again the halfway point to the mid-scale voltage or 0x6000. This process

    continues all the way to the last bit at which time the ramp rates of the two capacitors are

    equal.

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    CS Module Advantages

    No external components required

    Differential measurements reduce noise susceptibility

    SAR sampling immune to DC offsets and low frequency noise DC offset voltages have no effect on bit determination algorithm

    Fast conversion time Low frequency coupled AC noise susceptibility reduced (50/60 Hz)

    High frequency susceptibility reduced by design

    Can be configured for autonomous operation

    ISENSORIREF

    CSENSOR

    VREF

    SARCREF

    The SAR implementation eliminates the need to provide any external components

    and can monitor capacitance just by connecting to the pad of the MCU. All of the

    components necessary to implement CapSense are integrated on chip. Another

    benefit is the fact that the implementation uses a differential measurement for the

    sensor capacitor and the reference capacitor thus providing very high rejection to

    power supply noise. The SAR sampling method is not affected by DC offsets as therelative change in the voltage and the time period for that change is dependent on

    the capacitance. Also, the sampling time is very short minimizing the affects of low

    frequency noise. The design provides filtering for any high frequency interference

    that may cause inadvertent switch actuation. Since the peripheral is self timed it can

    run autonomously from the CPU which means the CPU can be in a low power state

    and be woken up by a switch actuation event.

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    Designing Touch Sensitive Switches

    Since we are detecting a change in capacitance,

    it follows that we want to maximize the change as

    much as possible

    On the PCB there are two main factors that affect the switch

    capacitance and how much it changes

    Size, shape and placement of the switch pattern on the PCB

    The characteristics of the trace that connects the switch to the MCU

    Now that we understand how Capacitive Sensing works, lets take a look at the

    system implementation. Our main goal in designing CapSense switches is to

    maximize the change in capacitance between the inactive state and a finger press.

    In order to accomplish our goal we have to keep in mind the equation for

    capacitance that we discussed earlier and is shown here for reference. When

    looking at this we see that the areas we can control are the pad dimensions whichrelate to the quantity A in the equation. This directly relates to the size and shape of

    the switch pattern. We also control d which is the distance from the pad of our

    assembly and the dielectric constant relating to the material we use to cover the pad.

    One thing that tends to get overlooked is the characteristics of the trace that

    connects the switch to the MCU. Being connected to the switch pad, all capacitance

    we add in the form of trace capacitance increases our inactive state capacitance.

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    Initial Configuration

    Performed for each switch individually Even if all the switches are the same size and shape, their location on

    the board will affect their inactive state capacitance

    Performed during development or production test The results should be programmed to Flash

    Three step procedure1. Measure the sensing method output with nothing on the switch (inactive state count)

    2. Measure the sensing method output with the switch active (active state count)

    3. Set the threshold to a value between the two measurements

    The threshold value determines the sensitivity

    Sensitiv

    ity

    Least

    MostInactive State Counts

    Active State Counts

    Single count threshold

    Inactive to Active Count

    Active to Inactive Count

    The purpose of the initial configuration is to determine the operating parameters of

    the switches. These values can be used as reference points for subsequent runtime

    operation of the switch. Measuring the inactive and the active state of the switches

    provides us with the information necessary to generate initial threshold values for

    each of the switches. One element of setting the threshold levels shown in the

    diagram is hysteresis. We can separate the inactive to active state threshold to onecount value and the switch active to inactive state to a lower value. When we are in

    the inactive state we compare the difference to the upper threshold. When the

    button has been considered active, a release of the button would occur after the

    lower threshold is crossed. An important note with these thresholding techniques is

    that the closer to the inactive state we set the compare value the more sensitive the

    switch as it would take less capacitance to cause the switch to be active the lower

    we set the threshold value. See application note AN367 for threshold

    recommendations as well as the capacitive sensing API for firmware

    implementations.

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    Traditional System Signal to Noise

    SNR is affected by different system level parameters

    Capacitive sensing pad layout

    Proximity to other conductive objects

    Ground planes Dielectric material and thickness

    Calculating SNR traditional method

    1

    0

    )(1 n

    tBn

    B

    1

    0

    )(1 n

    tAn

    A

    BtBNS ))(max(

    1. Calculate the mean for the inactive and the active state

    2. Calculate the peak noise value for the inactive state.

    3. Determine the number of counts for the signal

    BAS

    4. Divide the signal (S) by the noise (NS)

    SN

    SSNR

    External stimuli

    Electrical interference

    Environmental affects like temperature

    and contaminants on the switch

    There are many system level considerations when implementing Capacitive sensing.

    The responsiveness of a switch in the application is dependent on the pad size, the

    dielectric material type and thickness as well as the layout and how the PCB is

    oriented and what is in proximity to the pad. Once all of these factors are in place,

    only characterization of the switch can really provide the information required for

    the firmware to make the determination as to whether or not the switch is in theinactive state or the active state. In order to provide adequate margin between the

    two states all of the design considerations mentioned must be structured such that

    the maximum signal to noise ratio can be realized. This is required so suitable

    threshold levels can be identified. This slide explains the traditional signaling

    details required to characterize the system. In literature you can find that a suitable

    signal to noise ratio for Capacitive sensing for touch applications is 5 to 1. The

    equations listed above outline the traditional method to calculate the system level

    signal to noise ration of the switches.

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    23

    Can be conservative based on increased SNR capability of the C to D converter

    Calculate the inactive and active baselines

    Calculate the standard deviation of the noise for the inactive and active state and

    determine the safe zone

    Determine the thresholds of the signal

    System Characterization (1 of 3)

    1

    0)(

    1 n

    BB tIn

    I

    1

    0)(

    1 n

    BB tAnA

    BI

    BABItoA xIASafeZone 3.3

    IBItoA IxSafeZoneActiveInactiveTo 3.375.0

    IBABAtoI IxASafeZone 3.3

    AtoIAB xSafeZoneAactiveActiveToIn 75.03.3

    With the traditional approach to switch characterization no consideration is given to

    the noise in the active state. In reality, the human body is a good antenna and

    injects quite a bit of noise into the system. It makes sense that the noise level of the

    active state should be considered in setting the appropriate threshold values.

    Additionally, the traditional method only uses peak values of noise in the

    calculation of SNR. Here is a different approach where the noise level of both theinactive and active state are used to determine the threshold levels. We break this

    up into two different conditions, the first is when going from the inactive to the

    active state and the second is from the active to the inactive state. In order to

    calculate thresholds we first calculate the mean of both the inactive and active

    states. Next, a safe zone is determined which takes into account 3.3 standard

    deviations about the mean of the current state and 1 standard deviation about the

    mean of the next state. For example, when going from the inactive state to the

    active state we calculate 3.3 standard deviations about the inactive state mean and 1

    standard deviation about the active state mean. Combining these values with the

    means determines the safe zone. As a first approximation the thresholds are set at

    75% of these values as shown in the last set of equations.

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    24

    System Characterization (2 of 3)

    Initial Configuration

    Even if all the switches are the same size and shape, their location on the

    board will affect their inactive and active state capacitance

    Inactive State noise

    3.3

    Active State noise

    1

    Inactive State MEAN

    SafeZoneItoA

    Active State MEAN

    75% * SafeZoneItoA

    Inactive to Active Threshold Setting

    Here we see the preceding equations represented graphically for the inactive to

    active state transition. From the graph you can see that the standard deviations for

    both steady state values are used for determining the safe zone. The threshold is set

    to 75% delineated by the green hash mark.

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    25

    System Characterization (3 of 3)

    Store the operating parameters to the flash

    The threshold values determine the sensitivity

    Inactive State noise

    1

    Active State noise3.3

    Inactive State MEAN

    SafeZoneItoA

    Active State MEAN

    75% * SafeZoneAtoI

    Active to Inactive Threshold Setting

    Here we see the preceding equations represented graphically for the active to

    inactive state transition. This graph differs from the one on the preceding slide in

    that the active state noise being considered is now 3.3 standard deviations about the

    mean instead of 1 standard deviation when going in the reverse direction. The

    threshold is set to 75% of the safe zone this time delineated by the red hash mark.

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    Periodic Configuration

    Perform similar procedure as initial configuration during normal operation toaccount for a dynamic operating environment Some relevant factors are:

    Water, oil, or other materials on the switch

    Changes in supply voltage Change in humidity and temperature

    These factors can affect the capacitance of the switch or the charge/dischargeprofile If the effects are large enough, the incorrect measurements can lead to false switch

    events

    Once a system is deployed, there may be environmental effects that change the characteristics of the

    switch. An example would be a touch panel outside or an industrial environment where some oil or

    other material can get on the switch. When it rains the water would change the properties by altering

    the dielectric constant thereby changing the capacitance we would measure. Another effect could be

    as simple as differences in finger sizes. To compensate for these problems, periodic configuration (or

    baselining) compares runtime baseline values to calibrated reference baseline values and scales the

    thresholds appropriately. The inactive baselines are a way to determine the offset between inactivecapacitance measured during calibration and inactive capacitance measured at runtime. The active

    baselines are a way to determine how much the channel's gain has changed. Without periodic

    configuration, calibrated active and inactive threshold values can become invalid as conditions

    around the device change.

    Determining the threshold values is an important part of the Capacitive sensing system. Following

    the guidelines ensures reliable switch actuation when the system is deployed. All of these

    measurements should be tailored to the system. For example, the value of the noise should be

    determined in the environment that the system will be used. The active region should be set to a

    value that takes into account the distance of the finger to the pad due to dielectric gap as well as

    possible offset positions (which would reduce the output). These values are generated during the

    development phase of the project and can be stored in flash. The sensitivity margins provide thecapability to enhance the detection algorithms in order to adjust for environmental affects such as

    temperature drift. The inactive measurement can be continually updated as long as it is below the

    noise threshold. Keep in mind this is only a recommendation for standard switch implementations.

    There are many applications that may require deviating from these guidelines.

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    Different Switch Arrangements

    Solid pads

    Square pads and round pads

    Round pads have uniform field lines around the pad and are preferred

    Have similar sensitivity

    Highest sensitivity

    Interleaved pads

    Reduces pad area and increases parasitic capacitance

    Not recommended

    Effects of grounding

    Grounding around switches reduces sensitivity by absorbing some of the field lines

    The smaller the gap the more parasitic capacitance

    The gap should be sized according to the thickness of the dielectric material

    Necessary if no ground reference to the object in proximity

    Hatched ground planes minimize desensitizing parasitic capacitance while providing

    good noise reduction

    Now lets put what we learned to use. There are different topologies to consider

    when generating the Capacitive Sensing pads. When designing the pads we have to

    keep in mind that the field currents are going to try and find their way to ground

    whether it is a ground connection or a virtual ground represented by a finger. The

    most common type of pad is the solid circular pad. This provides the highest

    sensitivity because of the area based on our equation for capacitance. Without anygrounding, all of the field lines would be directed from the positive pad to the lower

    potential represented by the finger. There are also designs that interleave pads.

    These methods reduce the flux density to the finger because of reduced area and

    parasitic capacitance, thereby reducing sensitivity, and are not recommended.

    Another topology is to surround the pad with a ground or guard. The size of the gap

    between the pad and the ground changes the field lines which affect the parasitic

    capacitance. This shows up as a smaller net change in capacitance.

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    Effects of the Switch Size and Shape

    The inactive state capacitance (in pF) for each switch

    without any material on top is provided below

    It is easy to see that the bigger the switch and the more

    traces there are within a certain area, the more inactive

    state capacitance the switch has

    Both of these factors make the switch more robust

    1.91.12.24

    3.12.53.93

    6.44.88.42

    6.44.88.41

    CBApF

    A B C

    1

    2

    3

    4

    Lets take a look at some of these using real examples. The table shows

    measurements taken from the pad topologies shown. The values in the table are

    marked according to the letter and number designations from the figure. For

    example, A4 is the largest circular pad with a small gap to the ground ring. The

    values represented in the table show the inactive state capacitance (capacitance with

    no finger present). Since we are trying to measure the relative change incapacitance we would like to start with a low inactive state capacitance which

    provides greater dynamic range. You can see the coupling of the interleaved pads

    increases the inactive state capacitance and the solid pad enables us to get a lower

    inactive state capacitance.

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    Effects of Trace Length

    In order to achieve reliable switch measurements,

    the percentage change in capacitance between

    an inactive switch and an active switch should be atleast 0.5%

    The trace that connects the switch to the MCU input pin

    should be as short as possible to minimize the total parasitic

    capacitance added to the switch

    With lower parasitic capacitances, any change in the switch

    capacitance is more significant and more easily detected

    Parasitic capacitance in the PCB design affects the measurement capability. When

    we talk about parasitic capacitance we are referring to the voltage potential that

    exists along the length of the trace, therefore, longer traces have a higher

    susceptibility to parasitic capacitance. This is important in reaching our goal of

    increasing the relative change in capacitance when using this method for switches

    and is often an area overlooked. The value of trace capacitance adds to the overallinactive state capacitance of the Capacitive Sensing switch. In order to reduce the

    effects of trace capacitance shorter, narrower traces, which exhibit lower overall

    capacitance, are recommended. In addition to the inactive capacitance value of the

    trace, its proximity to noisy signals and grounds affect the overall performance of

    the system. Long traces are no big deal unless they are surrounded by conductive

    objects (like traces or grounds) at a different voltage potential (parasitic) or, and just

    as important, neighbored by other conductive objects with changing voltage

    potential (noise), such as traces from other nearby capacitive sensors. Why are

    these factors important? It is desirable to have at least a 0.5% change in the

    capacitance between the inactive state and the active state. For example, if the total

    capacitance of the switch and parasitic capacitances is 200 pF, the change in

    capacitance when you put your finger on the switch should be at least 1 pF.

    Overall, we want to reduce parasitic capacitance on the trace and at the sensor to

    maximize the sensitivity.

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    Switch ArrangementsSize and Shields

    Switch size

    Same size as the expected conductive object recommended

    Shields

    Plane layer at the same voltage potential as the pad

    Introduces no parasitic capacitance

    Increase sensitivity by forcing all field lines to the approaching

    conductive object

    Shield

    No voltage potential exists

    Pad area larger than needed

    Pad

    Conductive

    object

    When designing the Capacitive sensing pad the overall dimensions of the object you

    are trying to sense should be considered. For example, the conductive object shown

    in the slide is much smaller than the Capacitive sensing pad shown. With the

    conductive object of this size we would have unnecessarily oversized the pad. The

    same guidelines hold true when the conductive object is the human finger. Another

    aspect of switch design is the concept of shielding. In most instances we arefamiliar with using grounds as shields in order to block unwanted noise. However,

    when we are driving the pad capacitance with our excitation source (like the

    relaxation oscillator) and if we add a ground under the pad we will induce a voltage

    potential difference and thus a parasitic capacitance. There will be field lines from

    our pad that are attracted to the lower voltage potential. But what happens if we use

    a plane that is at the exact same potential as the pad we are exciting as shown in the

    figure? Since we now have the same voltage potential between the two plates there

    is no capacitance. All field lines that are generated from the pad are directed to the

    conductive object we place near the pad while blocking the unwanted parasitic

    capacitance.

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    Effects of Different Materials for the Dielectric

    The type of material on top of the switch affects the inactive state

    capacitance and the active change in capacitance

    The materials covered in the application note AN338 are:

    Glass (3.2, and 5.9 mm)

    Plexiglass (1.6, 5.0, and 9.8 mm)

    Mylar (0.35 and 0.70 mm)

    ABS plastic (2.0 and 4.0 mm)

    FR4 (1.6 mm)

    Recommendations

    Use the thinnest material possible to maximize the change in capacitance

    Use materials with a higher dielectric, such as glass, to increase the

    absolute capacitance of the switch

    This increases the relative change in capacitance when compared to the trace

    and other parasitic capacitances

    We discussed different areas that we can control in the design of the pads in order to

    increase the sensitivity and robustness of the switch. The first area we covered was

    the pad area and we saw that larger solid pads increased our sensitivity. The next

    area we can control is the dielectric material and the distance d from the pad. Most

    Capacitive Sensing pads have an overlay of some sort, like glass. The thicker the

    glass the farther away from the pad we are for the touch. Remember thatcapacitance goes down with an increase in distance so the material we place on top

    of the switch should be as thin as possible and still meet the application

    requirements. Also, the material chosen influences the capacitance via its dielectric

    constant. Using materials with a high dielectric constant will increase the

    sensitivity. Here are some materials that were tested in application note AN338

    from Silicon Labs. A link to the appnote can be found at the end of this

    presentation.

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    Design Considerations Summary

    The circular switches have the lowest inactive

    capacitance and also exhibit the largest relative

    change in capacitance when the switch is active

    Use the thinnest possible material with the highest dielectric constant

    Ensure that there is no gap between the board and the covering material

    Application notes are available to provide more detailed design

    guidelines including switch spacing and trace routing

    The advantage of having the lowest inactive capacitance is that it takes a shorter

    amount of time to measure one period when considering the relaxation oscillator

    method. The SAR technique conversion time is constant regardless of the value of

    the capacitance. This provides a consistent measurement from pad to pad. The

    advantage of having the largest change in capacitance is that it is easier to detect.

    The solid circular pad met both design goals, lower inactive capacitance and a highsensitivity. Using the thinnest possible material to meet the design goals enables the

    largest change in capacitance to be detected and therefore makes the design more

    robust. By maximizing the change in capacitance that can be detected the threshold

    and calibration algorithms can potentially be simplified reducing code space. When

    adding the material over the switches it is important to make sure there is no air gap.

    Air has a low dielectric constant compared to materials such as glass. Ensuring that

    there is no gap will ensure that the highest change possible will occur when the

    switch is active. Certain adhesives from 3M (such as 467 or 468) provide good

    bonding of the dielectric material while providing a uniform area and high dielectric

    constant. See application note AN338 for more information regarding capacitive

    sensing and measurement results of different materials.

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    C8051F93x Implementation

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    Capacitive Sensing RO Implementation

    How this is implemented on the C8051F93x-92x

    devices

    The relaxation oscillator is implemented using an on-chipcomparator

    The switch is the capacitor that is charged and discharged

    Measure the output frequency using a capture mode of the timer

    Lets take a look at how to implement the Capacitance Sensing using the C8051F9xx family

    from Silicon Labs. The relaxation oscillator itself is implemented using only the

    comparator. Remember from our earlier discussion about how the relaxation oscillator

    works. We have the resistor network used to set the comparator threshold and the feedback

    resistor to provide the current path to charge and discharge the capacitor. The comparators

    on the C8051F93x/92x family of devices include the charging mechanism for the switchcapacitors that are connected to the comparator multiplexer as well as automatically

    configuring the varying voltage threshold on chip. All that is required is to connect the pad

    to the pin of the MCU. The comparator output also can be used as the capture source for

    the timer.

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    C8051F93x/92x Comparator Block Diagram

    Comparator block diagram Comparator configured

    to monitor one touch

    sensitive switch

    The left side shows a simplified block diagram of the comparator peripheral when

    configured for Capacitive Sensing mode. The positive input multiplexer is

    configured to set the voltage threshold. The negative input multiplexer can select

    between the different GPIO pins that are connected to touch sensitive switches. The

    output of the comparator (CP OUT) has three functions. The first is to help set the

    voltage threshold, which is the resistor network in the top left. The second is tocharge and discharge the capacitor through the Rfeedback resistor. The third

    function is the the output frequency of the relaxation oscillator.

    The simplified diagram on the left shows one configuration where the positive input

    sets the threshold and the negative input is connected to the switches. The

    comparator multiplexers can switch roles and the positive input can be connected to

    the switches and the negative input can set the threshold. The positive input

    multiplexer can connect to 12 different GPIO pins and the negative input

    multiplexer can connect to 11 different GPIO pins for a total of 23 possible inputs.

    The right side shows the block diagram simplified even further to show the

    configuration for one touch sensitive switch.

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    RO Capacitive Sensing with Other MCUs

    The capacitive sensing solution can be implemented on otherSilicon Labs MCU families using only passive components

    The only extra requirements compared to the C8051F93x/F92x solutionare the (3 + N) resistors, where N is the number of switches and 3 extraport pins for the feedback

    Silicon Labs MCU families other than the C8051F93x/92x family caninterface up to 12 switches directly or more with an externalanalog multiplexer

    External ResistorsNo External Components

    The C8051F9xx family integrates all of the components required to implement

    Capacitance sensing. However, all of the active components are available in other

    Silicon Labs MCUs so this technology can be used with those as well. The only

    requirement is that the passive components are needed external to the device.

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    Adding Multiple Switches

    Adding multiple capacitive switches only requires

    switching the comparator multiplexer input

    The active switch on the multiplexer will start the charge-

    discharge cycle as soon as the multiplexer is switched over This enables rapid measurement of all switches

    There is an input multiplexor to the comparator that enables multiple switches to be

    used. All that is required is to switch the register value to enable the next pad and

    we can scan all of the switches. The comparator immediately starts the

    charge/discharge cycle once the multiplexor changes state.

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    The Comparator Module

    Here is a diagram of the actual implementation in the C8051F9xx family. Notice

    that the input multiplexors exist for both the positive and negative inputs to the

    comparator and that there are up to 23 pads that can be connected to the inputs. All

    of the resistors are integrated on chip as well so that the Capacitive Sensing pad is

    the only required external connection.

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    The Timer Module

    Comparator 0 is used as the capture event for the timer module.

    Allows for measuring the period of the relaxation oscillator using the systemclock (SYSCLK)

    Here is a diagram of the actual timer implementation in the C8051F9xx family.

    Notice that the comparator output is used to capture the number of system clock

    counts at the end of each relaxation oscillator period. Earlier we discussed how this

    measurement technique is accomplished. The value read from the timer capture

    register (TMR2RLL/TMR2RLH) is the value we read and subtract our inactive

    measurement. This difference calculated is the representation of the period of therelaxation oscillator.

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    Benefits Of The Implementation

    Low MCU overhead

    443 bytes code space for one switch and only one additional byte foreach additional switch

    Only requires one comparator and one timer Efficient algorithm allows the MCU to go into low-power mode and wake up

    periodically to detect a switch event

    Less than 0.05% CPU utilization

    No external hardware overhead

    Directly connect the switch traces to the MCU port pins

    No other external feedback resistors or capacitors are needed

    Simple configuration

    Easy to perform with any material on the switch

    Insensitive to noise and supply voltage Insensitive to 50/60 Hz noise

    Does not require precise source voltage (VDD)

    What are some of the benefits of this implementation?

    Low MCU overhead

    1) Most of the code space is used for initializing the peripherals and performing the

    configuration. Adding additional switches is trivial because all that has to be done is to

    increase the array size to store the mux settings and the configuration threshold.2) Typically requires only 1 comparator and 1 timer. A second timer can be used to

    schedule the measurements, but this is not necessary and the function can just be called as

    often as possible or whenever the firmware requires it.

    3) While the MCU is not measuring the switches, it can go into sleep mode.

    4) All circuitry required to implement the excitation to the pad is integrated on chip. This

    enable a direct connection to the pads from the MCU.

    Simple Configuration

    All configurable parameters are obtained the same whether the dielectric is plastic, glass,just the PCB trace alone, or anything else that typically covers the switch.

    Insensitive to noise and supply voltage

    There are a couple of aspects that affect the supply sensitivity. Sensitivity to noise and

    VDD drift. If there are transient glitches they would not be apparent across multiple

    samples and we can remove there affects. Also, because of the reference threshold

    tolerances and set up of the comparator circuitry, supply voltage variation does not affect

    the value of the time constant of the measured capacitance. Thus we can have the same

    period across temperature and dont need a precise VDD. The system clock is also stable

    across temperature which is the time base used for the measurement of the oscillator period.

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    ToolStick Evaluation Kit

    Four capacitive sensing pads

    Four LEDs

    Light sequence game

    Source code available

    Sample configurations for timers and the comparator modules

    available

    Wake on touch

    Capacitive Sensing

    Daughter CardToolStick Base Adapter

    Part Numbers:

    CAPTOUCHSENSESK Capacitive Sensing Starter Kit

    CAPTOUCHSENSEDC Capacitive Sensing Daughter Card

    Lets take a look at some of the hardware available to check out Capacitive Sensing.

    The ToolStick base adapter can connect to the Capacitive Sensing daughter card.

    This card implements the touch pads as 4 solid round pads with a ground guard.

    The sample code provided allows customers to play with the sensitivity of the

    switches and see how Capacitive Sensing might work in their application.

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    What Can You Do With the Kit?

    Check out the effect of differing sensitivities

    Play with the polling speed in firmware to see

    responsiveness and that it is easily fast enough that you canpress multiple switches simultaneously and not recognize

    any delay

    Look at environmental effects to verify sensitivities

    The moisture in your breath increases the dielectric of the capacitor

    This is an example of configuring the switches to be too sensitive

    Sensiti

    vity

    Least

    MostInactive Counts

    Active Counts

    Single count threshold

    Inactive to Active Threshold

    Active to Inactive Threshold

    The development tool is a good starting point for implementing your own system.

    You can play with the values in the source code provided in order to see how

    varying the threshold value affects the trip point of the switch. You can also take

    this a step further to see how environmental affects change the capacitance values.

    Even by blowing on the board, the humidity of your breath can change the dielectric

    constant and cause false positives depending on sensitivity settings.

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    C8051F700 CS Implementation

    16-bit SAR converter

    32 channel input multiplexor

    Single channel or multi-channel scanning using auto scan

    Hardware accumulator

    Window logic threshold to trigger an event when an active state is detected

    Lets take a look at how to implement the Capacitive Sensing using the C8051F700 family

    from Silicon Labs. The 16 bit SAR block itself is implemented as a complete stand alone

    block and generates its own time base. This allows it to run autonomously from the CPU

    and provides the capability to wake the CPU from a low power state. Also integrated is a

    20 bit accumulator that can add 1, 4, 8 or 16 scans and then provide the division using a

    simple shift function. Using this hardware accumulator and simple shift function provides alow overhead averaging function to reduce the affects of noise in the system. The window

    comparator is software programmable and is set based on the system level performance of

    the pad configurations. After the inactive and active signal levels are determined and a

    suitable threshold is obtained the window comparator can be set to trigger an event when

    the active switch threshold is met. This is useful to reduce CPU overhead and also for low

    power modes. The conversion of the CS0 module is capable of being generated from

    several sources including software trigger, all of the timers and auto-scanning. All of the

    required components for Capacitive sensing are integrated on chip. Therefore, we can

    connect the Capacitive Sense pad directly to the pin of the MCU.

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    Benefits of the CS Implementation

    Increased sensitivity to change in capacitance

    Hardware accumulator

    Decreases system noise

    Reduces CPU overhead

    Insensitive to noise and supply voltage changes

    Insensitive to 50/60 Hz noise due to sample t ime

    Differential sampling doesnt require precise supply voltage

    No external hardware overhead

    Directly connect the switch traces to the MCU port pins

    No other external feedback resistors or capacitors are needed

    Low MCU overhead

    Autonomous peripheral allows the MCU to go into low-power mode and wake up on a

    switch event

    Simple configuration

    Easy to perform with any material on the switch

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    Results

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    CS0 vs. RO Set-up

    Set-up C8051F700 and C8051F930 daughter cards used

    Similar layout

    Similar pad dimensions. The pads were simple as they were designed just for demo purposes.

    1/8 dielectric material

    Measured parameters Inactive state counts

    Active state data

    Calculated parameters Determine the mean of the inactive data

    Determine the noise of the inactive data

    Determine the mean of the switched active state data

    Calculate the Signal level

    Calculate the SNR and thresholds

    Capacitive Sensing

    Daughter CardToolStick Base Adapter

    1/8 overlay

    The hardware used to compare the relaxation oscillator method and the Capacitive

    Sensing Module (CS0) was the ToolStick daughter cards. The overlay material was

    placed on the switches and the data was accumulated viat the ToolStick Base

    Adapter. The inactive measurements were taken and then a finger press on the

    overlay material for each of the boards. The results are found on the next slides.

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    C8051F930 daughter card with 1/8 overlay results

    Sensitivity much less than the CS0 module

    Not a lot of SNR margin in this set-up

    Would need to revisit pad design, overlay material and software

    RO System Signal to Noise Example

    Inactive State Average = 413.12

    Active State Average = 419.87

    **Inactive state noise peak = 0.799

    *Inactive state noise = 1.3Signal = 6.75

    SNR = 6.75/.799 = 8.44

    SNR 3.3sigma = 5.02

    *The value of noise used is 3.3 standard deviations from the mean

    **The value of noise used is the peak value from the mean

    The RO method did not perform as well as the CS0 module. In order to use the RO

    method the pad would have to be redesigned and special consideration would have

    to be given to the overlay material and the thickness as well as the layout of the

    board. These factors were not even really considered on the F700 board as it was

    also just designed as a demo where a finger can be placed directly on the PCB.

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    CS0 System Signal to Noise Example

    Inactive state ave. = 19942

    Active state ave. = 20353

    *Inactive state noise1 = 26.7

    **Inactive state noise2 = 17.2Signal = 20353-19942 = 411

    *SNR1 = 411/26.7 = 15.4

    **SNR2 = 411/17.2 = 23.5

    Noise threshold = 164

    OFF threshold = 246

    ON threshold = 369

    Signal(S)

    Inactive State noise (N)

    Active State MEAN

    **SNR= 23.5

    Inactive State MEAN

    Inactive to Active Threshold

    Active to Inactive Threshold

    *The value of noise used is 3.3 standard deviations from the mean

    **The value of noise used is the peak value from the mean

    C8051F700 daughter card with 1/8 overlay (raw data)

    Here is an example using simulated data on a finger press using the CapSense

    module. The inactive measurement yields an average value of 19942. The active

    state measurement yields a average value of 20353. The difference of the average

    values gives us our signal level and in this case is 411. Once the signal is obtained

    the threshold values can be determined. For example, to set the value for the ON

    threshold we calculated 90% of the signal (.9 * 411). This value is then added tothe inactive mean to give is the actual threshold value in either counts (for the

    relaxation oscillator method) or 16 bit sample (using the SAR method). The other

    values are found in the same manner. There are two ways to measure the noise in

    the system. The first s using the standard deviation and the statistical value to

    encompass a percentage of the data points. The next way is to take the maximum

    value of the of the inactive data and subtract the mean to find the peak. Both values

    are shown above.

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    CS0 Actual System Design Example

    Inactive state ave. = 16436.7

    Active state ave. = 16736.57

    *Inactive state noise1 = 16.86

    **Inactive state noise2 = 11.3

    Signal = 16736.57 - 16436.7 = 299.87

    *SNR1 = 299.87/16.86 = 17.8

    **SNR2 = 411/17.2 = 26.5

    Noise threshold = 120

    OFF threshold = 180

    ON threshold = 270

    Signal(S)

    Inactive State noise (N)

    Active State MEAN

    **SNR= 26.5

    Inactive State MEAN

    *The value of noise used is 3.3 standard deviations from the mean

    **The value of noise used is the peak value from the mean

    Front panel display and touch pad input PCB with 1/8 overlay

    Raw data usedno oversample

    Here is an example using actual data from a completed system. The CS0 module

    was used in this example to accumulate single data points. The mean for the

    inactive counts and the active state were calculated and are shown on the side bar.

    The overall SNR in this system just using raw samples was 26.5 if using the

    standard method to calculate SNR. When using the more conservative approach our

    SNR measured 17.8 which is still 3.56 times better than what has been consideredthe accepted SNR for touch sense applications.

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    CS0 Actual System Design Example (Averaged)

    Inactive state ave. = 16387.5

    Active state ave. = 16736.69

    *Inactive state noise1 = 4.78

    **Inactive state noise2 = 3.5

    Signal = 16736 - 16387 = 349*SNR1 = 349/4.78 = 73

    **SNR2 = 349/3.5 = 99.7

    Noise threshold = 114

    OFF threshold = 170

    ON threshold = 256

    Signal(S)

    Inactive State noise (N)

    Active State MEAN

    **SNR= 99.7

    Inactive State MEAN

    *The value of noise used is 3.3 standard deviations from the mean

    **The value of noise used is the peak value from the mean

    Front panel display and touch pad input PCB with 1/8 overlay

    16x hardware-based oversample

    Here is an example using actual data from a completed system. The samples in this

    example were derived using a hardware averaging function. Sixteen samples were

    accumulated and averaged using hardware. This approach requires no CPU

    overhead to sum the sample and then perform the averaging function.

    Oversampling by 16 should decrease the noise by a factor of 4. The overall SNR

    will increase as a result.

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    CS0 vs. RO Conclusions

    CS0 sensitivity much greater than the RO module Reduces software overhead

    Provides margin in systems with changing environments

    Allows the use of various overlay thicknesses and materials

    Tests did not make use of the hardware accumulator

    Can increase the SNR even more

    CS0 scan time is extremely small Reduces noise sensitivity

    Increases number of switches that can be monitored

    RO method can achieve these good results with added software overhead

    and scan time

    CS0 provides more SNR margin 4x the SNR margin over the RO method

    16x the SNR margin using the hardware averaging

    .

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    Visit the Silicon Labs website to get more information on Silicon Labs products,technologies and tools.

    The Education Resource Center training modules are designed to get designers upand running quickly on the peripherals and tools needed to get the design done.

    To provide feedback on this or any other training go to:

    Learn More at the Education Resource Center

    http://www.silabs.com/ERC

    http://www.silabs.com/mcu

    http://www.silabs.com/CapTouchSense

    AN338: Capacitive Sensing Solution

    AN367: Understanding Capacitive Sensing Signal To Noise Ratios and SettingReliable Thresholds

    AN366: QUICKSENSE Firmware API

    AN418: Baselining in the QUICKSENSE Firmware API

    http://www.silabs.com/ERC

    Visit the Silicon Labs Education Resource Center to learn more about the MCU

    products.

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    www.silabs.com/MCU