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BUL312FPHIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

s HIGH VOLTAGE CAPABILITYs LOW SPREAD OF DYNAMIC PARAMETERSs MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATIONs VERY HIGH SWITCHING SPEEDs FULLY CHARACTERIZED AT 125 oCs LARGE RBSOAs FULLY INSULATED PACKAGE (U.L.

COMPLIANT) FOR EASY MOUNTING

APPLICATIONSs HORIZONTAL DEFLECTION FOR TVs SMPSs ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

DESCRIPTIONThe BUL312FP is manufactured using highvoltage Multi Epitaxial Planar technology for highswitching speeds and high voltage capability. Ituses a Cellular Emitter structure with planar edgetermination to enhance switching speeds whilemaintaining a wide RBSOA.

INTERNAL SCHEMATIC DIAGRAM

March 2004

TO-220FP

12

3

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value UnitVCES Collector-Emitter Voltage (V BE = 0) 1150 VVCEO Collector-Emitter Voltage (I B = 0) 500 VVEBO Emitter-Base Voltage (I C = 0) 9 V

IC Collector Current 5 AICM Collector Peak Current (t p

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THERMAL DATA

R thj-caseR thj-amb

Thermal Resistance Junction-Case MaxThermal Resistance Junction-Ambient Max

3.562.5

oC/WoC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

ICES Collector Cut-offCurrent (V BE = 0) VCE = 1150 VVCE = 1150 V T j = 125 oC 12 mAmA

ICE O Collector Cut-offCurrent (I B = 0)

VCE = 500 V 250 A

VCEO(sus) Collector-EmitterSustaining Voltage(IB = 0)

IC = 100 mA L= 25 mH 500 V

VEBO Emitter-Base Voltage(IC = 0)

IE = 10 mA 10 V

VCE(sat) Collector-EmitterSaturation Voltage

IC = 1 A I B = 0.2 AIC = 2 A I B = 0.4 AIC = 3 A I B = 0.6 A

0.50.71.1

VVV

VBE(sat) Base-Emitter

Saturation Voltage

IC = 1 A I B = 0.2 A

IC = 2 A I B = 0.4 AIC = 3 A I B = 0.6 A

1

1.11.2

V

VV

h FE DC Current Gain I C = 10 mA V CE = 5 VIC = 3 A V CE = 2.5 V

88 13.5

tstf

INDUCTIVE LOADStorage TimeFall Time

IC = 2 A I B1 = 0.4 AVBE(off) = -5 V R BB = 0 VCL = 250 V L = 200 H(see fig. 1)

1.280

1.9160

sns

tstf

INDUCTIVE LOADStorage TimeFall Time

IC = 2 A I B1 = 0.4 AVBE(off) = -5V R BB = 0 VCL = 250 V L = 200 HT j = 125 oC (see fig. 1)

1.8150

sns

Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

Safe Operating Areas Derating Curve

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(1) Fast electronic switch(2) Non-inductive Resistor(3) Fast recovery rectifier

Reverse Biased SOA Figure 1 : Inductive Load Switching TestCircuit

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