bst35xx 34xx presentation (a)...5 announcing&two&smartpa™&productlines&...
TRANSCRIPT
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Title
BST34 and BST35 series CMOS power amplifiers
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Agenda
Company background
CMOS PAs: An extreme challenge
Announcing the BST34 and BST35 CMOS PA product lines BST34 series
• Pin-‐compaFble drop-‐in replacement for exisFng PAs • Highest reliability
• Largest supply chain
BST35 series • Fewest dropped calls • Fastest data rates • 2dB higher TRP (total radiated power)
Summary
PA market data
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Black Sand company background
Company founded June 2007 Series A: $8.2M
Series B: August 2009 -‐ $10M
AusFn Ventures & Northbridge VP
Team 10+ years of CMOS PA design experience
Deep experience in RF CMOS design
Consultants, advisors and board members • Sodini (MIT), Larson (UCSD), Wilska (Nokia)
Industry firsts World’s first 2G CMOS PA (Silicon Labs team, now at Black Sand)
World’s first 3G CMOS PA (Black Sand prototype in 2009)
World’s largest CMOS PA patent porcolio Over 70 patents and applicaFons
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CMOS PAs: an extreme challenge
Benefits of CMOS Mixed-‐signal digital and analog architecture
Higher reliability
Superior supply chain and cost-‐structure
Material challenge Lower mobility, lower voltage transistors
Use digital to bring CMOS smarts
Design Challenge No exisFng market knowledge base for building CMOS PAs
Standard mixed-‐signal design methodology is opFmized for small-‐signal analysis
Large-‐signal effects and interacFons dominate PA designs • Even small magneFc or electric couplings have significant impact on performance metrics
ExisFng CAD tools do not provide accurate predicFons of device funcFonality • Including the small parasiFcs that have large impact on PA performance
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Announcing two SmartPA™ product lines
BST 34 series Pin-‐compaFble drop-‐in replacement for exisFng GaAs PAs
BST35 series High performance TrueDelivered™ power detector
BST34 and BST35 series common CMOS advantage SmartPA™ technology
• Digital bias control
• Digital calibraFon of internal offsets • Internal sensors to opFmize real-‐world performance
Highest reliability • Unlike GaAs, CMOS is not subject to thermal runaway • Mixed-‐signal (analog & digital signals) circuits protect sensiFve transistors
CMOS supply chain • Massive supply chain – larger than all GaAs compeFtors combined • GaAs supply shortages have occurred in the past and will occur again in the future
• CMOS uses standard silicon, not dependent on rare-‐earth metals for producFon
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BST34 series power amplifiers
Pin-‐compaFble with exisFng GaAs PAs Drop-‐in replacement (3x3mm 10pin package)
Integrated direcFonal coupler
Daisy-‐chain compaFble
RF performance meets/exceeds GaAs PAs Compliant with 3GPP WCDMA, HSDPA, HSUPA
28dBm output power in high power mode (HPM)
19dBm output power in medium power mode (MPM)
40% efficiency
Three products to cover 3G high bands
Product Band Band Name Frequency Samples Production
BST3401 Band-1 UMTS 2100 1920-1980 MHz Feb. 2011 Q2 2011
BST3402 Band-2 PCS 1850-1910 MHz Q2 2011 Q3 2011
BST3404 Band-4 AWS 1710-1755 MHz
Q2 2011 Q3 2011 Band-9 Japan 1749.9-1784.9 MHz
Band-10 Latin America 1710-1770 MHz
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BST35 series power amplifiers
Same RF performance as BST34 series meets/exceeds GaAs
High performance TrueDeliveredTM power detector Patented technology allows mobile device to safely
increase TRP (Total Radiated Power) Precision detector miFgates tradeoff between TRP, ID
(industrial design), and SAR (specific absorpFon rate) safety concerns
Up to 2dB higher TRP in real-‐world • Fewer dropped calls
• Higher data rates
Three products to cover 3G high bands Product Band Band Name Frequency Samples Production
BST3501 Band-1 UMTS 2100 1920-1980 MHz Feb. 2011 Q2 2011
BST3502 Band-2 PCS 1850-1910 MHz Q2 2011 Q3 2011
BST3504 Band-4 AWS 1710-1755 MHz
Q2 2011 Q3 2011 Band-9 Japan 1749.9-1784.9 MHz
Band-10 Latin America 1710-1770 MHz
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TrueDelivered™ power detector
BST35 series improves total radiated power (TRP) Real-‐world mobile device usage has antenna interference Interference is measured using VSWR (voltage standing wave raFo) Typical real-‐world VSWR is 2.5:1, max is 4:1
Comparing BST3501 vs. GaAs PA at 2.5:1 VSWR (graph on next page) 1dB improvement in TRP compared to GaAs PA with ideal coupler &
power detector Up to 3dB improvement in TRP compared to GaAs PA with integrated
coupler GaAs PA with integrated coupler may also violate SAR safety
requirements
Hand-head usage example Texting/data usage example USB model near metal table usage example
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TrueDelivered™ power detector
VSWR Phase
P DELIVER
ED (d
Bm)
Black Sand BST3501
GaAs PA, ideal coupler, ideal power detector
GaAs PA, integrated coupler, ideal power detector
1dB
3dB
SAR violaFons
Product line for 2011
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Sampling February “2100” Band-‐1 (1920-‐1980 MHz) integrated coupler
Sampling Q2 “PCS” Band-‐2 (1850-‐1910 MHz) integrated coupler
Sampling Q2 “AWS” Band-‐4 (1710-‐1755 MHz) “Japan” Band-‐9 (1749.9-‐1784.9 MHz) “L. America” Band-‐10 (1710-‐1770 MHz) integrated coupler
BST34 Series
BST35 Series
Sampling February “2100” Band-‐1 (1920-‐1980 MHz) TrueDeliveredTM power detector
Sampling Q2 “PCS” Band-‐2 (1850-‐1910 MHz) TrueDeliveredTM power detector
Sampling Q2 “AWS” Band-‐4 (1710-‐1755 MHz) “Japan” Band-‐9 (1749.9-‐1784.9 MHz) “L. America” Band-‐10 (1710-‐1770 MHz) TrueDeliveredTM power detector
0
500
1,000
1,500
2,000
2,500
3,000
2011 2012 2013 2014
3G Device Shipments 3G Device (Shipments*Bands)
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Black Sand target market – 3G mobile devices
Sources: Oppenheimer, Needham 2010
3G growth drivers Smartphones & data cards China 3G Tablets, eBooks, mobile consumer
Large available market 900M 3G devices in 2014 Growing # PAs/handset 50% devices in 2014 with >4 3G bands
Uni
ts (M
illio
ns)
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Black Sand SmartPATM summary
BST 34 series Pin-‐compaFble, drop-‐in replacement
Highest reliability
CMOS supply chain
BST 35 series TrueDeliveredTM power detect increases mobile device TRP by 2dB
Fewer dropped calls
Higher real-‐world data rates
Smartphone designers can beter balance • ID (industrial design) • TRP (total radiated power)
• SAR (specific absorpFon rate) safety
TrueDeliveredTM Power Detector - Accurate to less than +/-0.5dB - Improves mobile device TRP by up to 2dB - Mitigates tradeoff between
- Industrial design (ID) - TRP - SAR
- Reduces dropped calls - Increases real world data rates
Product highlights
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High Performance CMOS PA Core - 28dBm output power - 40% Efficiency - Compliant with 3GPP WCDMA, HSDPA, HSUPA
Voltage and temperature protection - 100:1 VSWR rating - Robust to open and short at output - Eliminates the need for an isolator
Pin-compatible architecture - 3x3mm 10 pin - BST34 series includes coupler - 50 ohm input and output - Drop-in replacement
Digital architecture - Precise biasing and internal controls boost real-world performance
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Appendix A: 3G cellular handset RF block diagram
PCS
Cell
Cell
PCS
GSM 900
DCS
IMT
Cell /. GSM 900
DCS / PCS
SP9T
RF transceiver
( XCVR ) IC
Cellular baseband
( BB ) IC
- 3G PA - 2G PA
RF front-end
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Appendix B: Comparing delivered power vs. forward power
Standard Power DetecFon (3:1 VSWR)
BST3501
10dB DirecFvity 20dB DirecFvity 50 ohm 3:1 VSWR
Coupler FVT +/-‐ 0.25 dB +/-‐ 0.25 dB -‐ -‐
Power detector FVT +/-‐ 0.25 dB +/-‐ 0.25 dB +/-‐ 0.25 dB +/-‐ 0.5 dB
DirecFvity Error +/-‐ 1.4 dB +/-‐ 0.4 dB -‐ -‐
Mismatch error -‐1.25 dB -‐1.25 dB -‐ -‐
Total +1.9 / -‐3.15 dB +0.9 / -‐2.15 dB +/-‐ 0.25 dB +/-‐ 0.5 dB
Forward power detecFon Implemented in most phones today Mismatch error not accounted for DirecFvity error in lower cost couplers Results in lower TRP and higher SAR
True delivered power detector Implemented in BST35xx products No mismatch loss or direcFvity error Results in higher handset TRP Eliminates SAR/TRP compromise
GaAs PA
PDELIVERED
PFORWARD
PFORWARD
PREVERSE