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Eur. Phys. J. C (2020) 80:63 https://doi.org/10.1140/epjc/s10052-019-7586-6 Regular Article - Experimental Physics Broad angular anisotropy of multiple scattering in a Si crystal A. Mazzolari 1 , A. Sytov 1,2 ,a , L. Bandiera 1 , G. Germogli 1,2 , M. Romagnoni 1,2 , E. Bagli 1 , V. Guidi 1,2 , V. V. Tikhomirov 3 , D. De Salvador 4 ,5 , S. Carturan 4 ,5 , C. Durigello 4 ,5 , G. Maggioni 4 ,5 , M. Campostrini 5 , A. Berra 6 ,7 , V. Mascagna 6 ,7 , M. Prest 6,7 , E. Vallazza 6 , W. Lauth 8 , P. Klag 8 , M. Tamisari 1,9 1 INFN Sezione di Ferrara, Via Saragat 1, 44124 Ferrara, Italy 2 Dipartimento di Fisica e Scienze della Terra, Università di Ferrara, Via Saragat 1, 44124 Ferrara, Italy 3 Institute for Nuclear Problems, Belarusian State University, Bobruiskaya 11, 220030 Minsk, Belarus 4 Dipartimento di Fisica e Astronomia, Università di Padova, Via Marzolo 8, 35131 Padua, Italy 5 INFN Laboratori Nazionali di Legnaro, Viale dell’Università 2, 35020 Legnaro, Italy 6 INFN Sezione di Milano Bicocca, Piazza della Scienza 3, 20126 Milan, Italy 7 Università dell’Insubria, via Valleggio 11, 22100 Como, Italy 8 Institut für Kernphysik der Universität Mainz, 55099 Mainz, Germany 9 Dipartimento di Scienze Biomediche e Chirugico specialistiche, Università di Ferrara, Via Luigi Borsari 46, 44121 Ferrara, Italy Received: 24 May 2019 / Accepted: 23 December 2019 / Published online: 25 January 2020 © The Author(s) 2020 Abstract We observed reduction of multiple Coulomb scattering of 855 MeV electrons within a Si crystalline plate w.r.t. an amorphous plate with the same mass thickness. The reduction owed to complete or partial suppression of the coherent part of multiple scattering in a crystal vs crystal orientation with the beam. Experimental data were collected at Mainz Mikrotron and critically compared to theoretical predictions and Monte Carlo simulations. Our results high- lighted maximal 7% reduction of the r.m.s. scattering angle at certain beam alignment with the [100] crystal axes. However, partial reduction was recorded over a wide range of alignment of the electron beam with the crystal up to 15 . This evidence may be relevant to refine the modelling of multiple scattering in crystals for currently used software, which is interesting for detectors in nuclear, medical, high energy physics. 1 Introduction Interaction of a charged particle traversing an amorphous medium occurs through repeated interactions with atoms, i.e. the so-called multiple Coulomb scattering [13]. This effect is essential for describing any physical experiment connected with the passage of charged particles through matter. A large variety of detectors, in particular semiconductor detectors, electromagnetic calorimeters, etc. require simula- tions of multiple scattering using special well-verified soft- ware like GEANT 4 [4], FLUKA [5] and other codes for event reconstruction. Although the materials which the detec- a e-mail: [email protected] tors are frequently made of have a crystalline structure, they are usually treated with a multiple scattering model for an amorphous media. Since a crystal is a solid material whose constituents, such as atoms, molecules or ions, are arranged in a periodical structure forming a lattice, the interaction of particles with a crystal may be different w.r.t. an amorphous medium. Indeed, particle interaction with atoms of a crystal may occur through two routes: either with individual atoms as for an amorphous medium (incoherent scattering) or with an ordered ensemble of atoms in a crystal as a whole such as atomic strings or planes (coherent scattering). In the latter case, the interaction potentials of individual atoms have to be replaced with the collective potential of atomic strings or planes. Coherent interaction is observed when some condi- tions for alignment of the particle momentum with the crystal are met, while incoherent interaction is inherently isotropic. Indeed this is well known in the Diffraction Theory. Diffraction occurs when the particle energy is sufficiently low, and therefore the De Broglie wavelength, λ, is compa- rable with the lattice spacing d at . Diffraction is usually inter- preted in terms of interference patterns in the elastic scatter- ing cross section (coherent interaction), describing the inter- action between radiation and the crystal lattice as a whole, i.e. scattering on different atoms cannot be considered indepen- dently [6]. For instance, diffraction of relatively low energy (10 eV–100 keV) electrons [7] interacting with crystalline solids proved to be a powerful tool to investigate the crys- talline structure of matter. 123

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Page 1: Broad angular anisotropy of multiple scattering in a Si crystal · 2020-03-04 · coherent part of multiple scattering in a crystal vs crystal orientation with the beam. Experimental

Eur. Phys. J. C (2020) 80:63https://doi.org/10.1140/epjc/s10052-019-7586-6

Regular Article - Experimental Physics

Broad angular anisotropy of multiple scattering in a Si crystal

A.Mazzolari1, A. Sytov1,2,a, L. Bandiera1, G.Germogli1,2,M.Romagnoni1,2, E. Bagli1, V.Guidi1,2, V.V.Tikhomirov3,D. De Salvador4,5, S. Carturan4,5, C. Durigello4,5, G. Maggioni4,5, M. Campostrini5, A. Berra6,7, V. Mascagna6,7,M. Prest6,7, E. Vallazza6, W. Lauth8, P. Klag8 , M. Tamisari1,9

1 INFN Sezione di Ferrara, Via Saragat 1, 44124 Ferrara, Italy2 Dipartimento di Fisica e Scienze della Terra, Università di Ferrara, Via Saragat 1, 44124 Ferrara, Italy3 Institute for Nuclear Problems, Belarusian State University, Bobruiskaya 11, 220030 Minsk, Belarus4 Dipartimento di Fisica e Astronomia, Università di Padova, Via Marzolo 8, 35131 Padua, Italy5 INFN Laboratori Nazionali di Legnaro, Viale dell’Università 2, 35020 Legnaro, Italy6 INFN Sezione di Milano Bicocca, Piazza della Scienza 3, 20126 Milan, Italy7 Università dell’Insubria, via Valleggio 11, 22100 Como, Italy8 Institut für Kernphysik der Universität Mainz, 55099 Mainz, Germany9 Dipartimento di Scienze Biomediche e Chirugico specialistiche, Università di Ferrara, Via Luigi Borsari 46, 44121 Ferrara, Italy

Received: 24 May 2019 / Accepted: 23 December 2019 / Published online: 25 January 2020© The Author(s) 2020

Abstract We observed reduction of multiple Coulombscattering of 855 MeV electrons within a Si crystalline platew.r.t. an amorphous plate with the same mass thickness. Thereduction owed to complete or partial suppression of thecoherent part of multiple scattering in a crystal vs crystalorientation with the beam. Experimental data were collectedat Mainz Mikrotron and critically compared to theoreticalpredictions and Monte Carlo simulations. Our results high-lighted maximal 7% reduction of the r.m.s. scattering angle atcertain beam alignment with the [100] crystal axes. However,partial reduction was recorded over a wide range of alignmentof the electron beam with the crystal up to 15◦. This evidencemay be relevant to refine the modelling of multiple scatteringin crystals for currently used software, which is interestingfor detectors in nuclear, medical, high energy physics.

1 Introduction

Interaction of a charged particle traversing an amorphousmedium occurs through repeated interactions with atoms, i.e.the so-called multiple Coulomb scattering [1–3]. This effectis essential for describing any physical experiment connectedwith the passage of charged particles through matter.

A large variety of detectors, in particular semiconductordetectors, electromagnetic calorimeters, etc. require simula-tions of multiple scattering using special well-verified soft-ware like GEANT 4 [4], FLUKA [5] and other codes forevent reconstruction. Although the materials which the detec-

a e-mail: [email protected]

tors are frequently made of have a crystalline structure, theyare usually treated with a multiple scattering model for anamorphous media. Since a crystal is a solid material whoseconstituents, such as atoms, molecules or ions, are arrangedin a periodical structure forming a lattice, the interaction ofparticles with a crystal may be different w.r.t. an amorphousmedium.

Indeed, particle interaction with atoms of a crystal mayoccur through two routes: either with individual atoms asfor an amorphous medium (incoherent scattering) or with anordered ensemble of atoms in a crystal as a whole such asatomic strings or planes (coherent scattering). In the lattercase, the interaction potentials of individual atoms have tobe replaced with the collective potential of atomic strings orplanes. Coherent interaction is observed when some condi-tions for alignment of the particle momentum with the crystalare met, while incoherent interaction is inherently isotropic.

Indeed this is well known in the Diffraction Theory.Diffraction occurs when the particle energy is sufficientlylow, and therefore the De Broglie wavelength, λ, is compa-rable with the lattice spacing dat . Diffraction is usually inter-preted in terms of interference patterns in the elastic scatter-ing cross section (coherent interaction), describing the inter-action between radiation and the crystal lattice as a whole, i.e.scattering on different atoms cannot be considered indepen-dently [6]. For instance, diffraction of relatively low energy(10 eV–100 keV) electrons [7] interacting with crystallinesolids proved to be a powerful tool to investigate the crys-talline structure of matter.

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63 Page 2 of 8 Eur. Phys. J. C (2020) 80 :63

At higher energies, λ becomes much shorter than dat andone expects that coherent effects disappear. Nevertheless, atsufficiently high-energy, even if λ � dat , the typical lengthof scattering region increases with the energy, being longerthan dat . Indeed, the length of the scattering region increaseswith the particle energy, E , embracing more and more atomsalong a lattice direction. As for diffraction, the scattering bydifferent atoms is also not independent in this case, and onehas to consider the scattering of the particle by the crystal asa whole (coherent scattering). Naturally, coherent interactionadds up with incoherent scattering by individual atoms.

The first who understood the importance of the latticestructure in the interaction of high-energy particles withcrystals were Ferretti and Ter-Mikaelyan, who exploitedthe Laue theory of diffraction to describe the interfer-ence effect of bremsstrahlung in crystals, so-called coherentbremsstrahlung (CB). CB is worldwide exploited at accel-erator facilities [8–10], typically used in hadronic physics[11,12]. This phenomenon occurs even when the electronand positron incidence angles w.r.t. crystal planes and axesare small (less than 1◦). At very small incidence angle, i.e.lower than the critical one introduced by Lindhard [13], acharged particle can be captured in the axial/planar potentialwell, i.e. Channeling occurs [14–16]. For particles movingin a crystal under channeling regime, the multiple scatteringencounted is significantly different than if the particle wouldtraverse an amorphous medium with the same density.

As described above, the scattering between the chargedparticle and crystal can be divided into coherent and inco-herent parts. One may expect that in the case of absence ofcoherent scattering, the total multiple scattering is decreasedwith respect to an amorphous matter.

In this paper we introduce the effect of complete coher-ent scattering suppression (CSS) at certain crystal orienta-tions, which we calculate under proper approximation. Wereport direct observation of CSS effect, determine the neces-sary conditions for its manifestation and model it via MonteCarlo simulations. Moreover, we provide an evidence of par-tial CSS occuring at much broader incidence angle than thecritical angle for channeling.

2 Basics of multiple scattering in a crystal

As for any situation when coherent and incoherent effectscompete, the well known treatment borrowed from X-raydiffraction can be called forward and adapted to our circum-stances. We adopted the work that Ter-Mikaelyan carriedon for the case of bremsstrahlung [9] to the case of mul-tiple scattering of charged particles in crystals. We intro-duced a theoretical calculation to explain CSS following atypical approach for X-ray diffraction [6], being applicablealso for classical particle scattering by atomic strings and

planes [17,18]. The particle–crystal interaction potential isdescribed as the sum of individual particle–atom interactionpotentials U (r) = ∑

j V (|r− rj|), r being the particle posi-tion and rj j-th atom location in the lattice. The latter differsfrom the equilibrium atomic position rj0 due to thermal vibra-tions, rj = rj0 + uj, uj being the uncorrelated displacementfrom the lattice nodes, characterized by the r.m.s. amplitude< u2j >.

As a high-energy particle impinges on a crystal axis orplane at large enough angle, its wave function resembles aplane wave. Therefore, the Born approximation is tradition-ally applied to treat its interaction with the crystal by usingthe differential scattering cross-section (h̄ = c = 1):

dΩ=

∣∣∣∣∣∣

N∑

j=1

eiqrj

∣∣∣∣∣∣

2dσat

dΩ, (1)

where q = p−p′ is the momentum transferred to the crystallattice, N is the number of scattering centers in a crystal anddσat the cross-section of scattering on a single atom. Here-inafter we will use the Coulomb screened (Yukawa) atomicpotential [2,4], to calculate this cross-section. By assum-ing that atoms vibrate independently across their equilibriumpositions, the total differential cross section (1) can be splitinto two parts [6,9]

dΩ= dσcoh

dΩ+ dσinc

dΩ, (2)

where

dσcoh

dΩ= D

∣∣∣∣∣∣

N∑

j=1

eiqrj0

∣∣∣∣∣∣

2dσat

dΩ(3)

is the “coherent” term of the differential cross section [6,9]with the same form as the Laue–Bragg formula. This termrepresents the scattering process without any energy transferto the crystal lattice, the probability of which is given bythe Debye–Waller factor D = exp(−q2u2

1), where u1 is theone-dimensional amplitude of thermal oscillations u2

1 =<

u2j > /3. In turn, the “incoherent” term of the scatteringcross section

dσinc

dΩ= N (1 − D)

dσat

dΩ= dσam

dΩ− dσ1

dΩ(4)

is proportional to the probability 1−D, that an energy transferoccurs, and can be naturally separated into two contributions

dσam

dΩ= N

dσat

dΩand

dσ1

dΩ= ND

dσat

dΩ, (5)

where dσam/dΩ represents the scattering in an amorphousmedia, dσ1/dΩ the difference between amorphous and crys-tal cases in differential cross-section of incoherent scatteringunaccompanied by the atom vibration state change.

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Eur. Phys. J. C (2020) 80 :63 Page 3 of 8 63

Fig. 1 Coordinate system to describe particle incidence on both the〈100〉 atomic string and the (110) plane in a Si crystal

As the atom positions rj0 are uncorrelated as in an amor-phous medium, the cross section (3) exactly compensates fordσ1/dΩ (5), making the total particle scattering cross sec-tion (2) both equal to dσam/dΩ (5) and independent of D.However, dσcoh/dΩ (3) does not necessarily compensate fordσ1/dΩ (5) in crystals. Indeed, at certain particle incidencedirection, dσcoh/dΩ can be practically nullified, manifestingthus the coherent scattering suppression (CSS) effect:

dσdσcoh=0−−−−−→ dσam − dσ1. (6)

In the case of a Si crystal oriented as in Fig. 1, the con-ditions in Eq. (6) for observation of the CSS effect, are nat-urally about the angles of incidence w.r.t. 〈100〉 axis, i.e.

θ =√

θ2x + θ2

y ≈ θy and (110) Si plane, i.e. θx . They should

be chosen in the regions, respectively

10θplch dax

πu1≈ 18 mrad < θy <

πu1

dat≈ 43 mrad, (7)

where dat is the interatomic distance in the 〈100〉 axis, and

10θplch ≈ 2 mrad < θx <

πu1

daxθy ≈ 4.3 mrad, (8)

where dax is the interaxial distance for the (110) plane, θ plch for

planar channeling critical angle. The left hand sides of bothEqs. (7) and (8) assure the necessary precision of straightline approximation [19]. Maximal CSS effect is attained atθy = 34.9 mrad (2◦) w.r.t. 〈100〉 Si axis and θx = 3 mradw.r.t. (110) Si plane. More information about this choice aswell as about Born approximation theory on CSS effect isconsidered in appendix A.

It is important to underline that the Born approximationwas applied only to obtain the conditions (7, 8). Though at theexperimental conditions considered in this paper it may beinvalid [17,20–22], it gives realistic estimates of the angularrange of the maximal CSS effect, as will be confirmed by bothexperimental and simulation results in the next paragraph.

Fig. 2 The difference of the angular distributions of deflected beamby a silicon crystal, aligned at θx = 3 mrad, θy = 34.9 mrad (2◦) andamorphous membranes for experiment (solid), simulations (dashed) andMolière model (dot dashed). The distributions themselves are placed ininsert. The curve width represents the errors

3 Experimental results

Direct observation of CSS effect was carried out at the MAinzMIkrotron (MAMI) by scattering of 855 MeV electrons oneither crystal or amorphous Si plate l ∼ 30 µm thick alongthe beam. The experimental setup is described in [23]. Thecrystalline plate was fabricated via anisotropic wet etchingprocedures [24], while the amorphous plate was produced bysputtering deposition of silicon onto a dedicated substrate,followed by anisotropic wet-chemical erosion to arrive at athin amorphous plate surrounded by a bulky Si frame formechanical stability [25]. Thickness was 34.2 ± 0.2 µm forthe crystal plate and 32.76 ± 0.09 µm for the amorphousone. Following the method [26] with a high resolution X-ray diffractometer, we verified their structure and measuredthat the two plates differ in mass thickness by 0.4% only.The angular distributions of horizontal scattering angles ϑx

for both kinds of plates as well as the difference of thesedistributions are illustrated in Fig. 2.

We used Molière theory [2,3] to calculate the distributionof horizontal scattering angles ϑx

p(ϑx ) = 1π

∞∫−∞

∑∞j=0

(ϑsϑc

)2 jf ( j)

(√ϑ2x +ϑ2

y

2ϑ2s

)

dϑy,

ϑc = α[Z(Z + 1)z4πnat l]1/2/pv,

(9)

where p and v are the particle momentum and velocityrespectively, α the fine structure constant, nat the atomic den-sity, Z the atomic number, z the particle charge in e units,the functions f ( j) are introduced in [2,3].

ϑs is the only free parameter of Molière theory, which is ofthe order of the r.m.s. of distribution p(ϑx ). Indeed, at lowestorder ( j = 0), ϑs is exactly the r.m.s. of the distribution. Forcomparison with the experimental results, p(ϑx ) was convo-luted with the angular distribution of the beam characterizedby 27 µrad divergence. In Table 1 ϑs is reported for 3 dif-ferent cases: by fitting of experimental data with Eq. (9), by

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63 Page 4 of 8 Eur. Phys. J. C (2020) 80 :63

Table 1 Molière theory parameters for silicon crystal (θx = 3 mrad,θy = 34.9 mrad (2◦)) and amorphous plates, calculated by (9, 10) andby fitting both experimental and simulation data

ϑ (µrad) Experiment Simulation Molière theory

ϑcrs 183.4 ± 2.0 181.5 ± 0.6 178.6 ± 0.6

ϑams 196.5 ± 2.0 197.3 ± 0.3 195.6 ± 0.3

ϑcrmin 17.3 ± 0.8 18.0 ± 0.4 19.25

ϑammin 12.5 ± 0.7 12.30 ± 0.13 12.83

fitting in the same way of the distributions obtained by MonteCarlo simulations described below and by a full theoreticalestimation also described below. The difference between ϑs

for the crystalline and amorphous cases are reported for allthese 3 cases in Fig. 2 and showing a firm observation of theCSS.

According to Molière theory [2,3], the theoretical valueϑs is defined as a function of an effective minimal scatter-ing angle ϑam

min = h̄/Rp, evaluated through the Coulombscreened (Yukawa) atomic potential, where R = aT F (1.13+3.76(αZz/β)2)−1/2 is the atom screening radius, chosenaccording to [2,3], aT F = 0.8853aB Z−1/3 the Thomas–Fermi screening radius, aB the Bohr radius. The CSS effect incrystals can be similarly described by introducing the effec-tive minimal scattering angle ϑcr

min , obeying the relation

ln ϑcrmin = ln ϑam

min + 0.5Z

Z + 1

×[(

1 + u21

R2

)

eu2

1R2 E1

(u2

1

R2

)

− 1

]

, (10)

obtained by integration of the cross section (4) following theMolière theory [2,3] at the condition of complete coherentscattering suppression dσcoh/dΩ = 0. E1 is the exponen-tial integral. The last item in (10) is representation of thedσ1/dΩ contribution in (4), manifesting the difference inincoherent scattering between the crystalline and amorphouscases. The ratio Z/(Z + 1) is necessary to exclude from theCSS effect scattering on atomic electrons, described by “+1”in the definition of ϑc (see Eq. 9) [3].

According to Eq. (10), the CSS effect can be interpretedas the increase in the effective minimal scattering angle fromϑammin to ϑcr

min . Both of these values as well as the correspond-ing angles ϑs are summarized in Table 1 and used for calcula-tion of the theoretical angular distributions (Molière theory)by Eq. (9) as shown in Fig. 2. The experimental and simulatedvalues for ϑam

min and ϑcrmin shown in Table 1 were calculated

from the corresponding values ϑs in Table 1.Both the experiment and the theory demonstrate the extent

of CSS effect although the agreement is not perfect. However,neither Born approximation nor Molière theory, modifiedusing Eq. (10), take into consideration the residual coherent

effects, such as the influence of the string potential on inco-herent scattering and an additional angular spread arising atboth the entrance and exit of a particle in/out of a crystal. Allthese effects have been fully taken into consideration by usingthe CRYSTAL code [27,28], a program for Monte Carlo sim-ulations of charged particle trajectories in the potential of acrystalline medium with simulation of incoherent scattering,tested in different experiments [29–31]. The results of simu-lations are shown in Fig. 2 and Table 1.

The CSS effect was also investigated both experimentallyand by simulations over a wide range of particle incidencedirections θy and θx including the values beyond the optimalangular range of Eqs. (7, 8).

The corresponding angular distributions were used for afit of Molière theory to calculate dependence of ϑs on bothθy and θx , as shown in Fig. 3a, b, respectively. The horizontallines indicate the ϑs values evaluated for the amorphous caseusing Molière theory. The values of θy and θx used in Fig. 3a,b are shown in Fig. 3c.

Figure 3a demonstrates that although the full CSS effectis attained within a relatively narrow angular region as inEqs. (7, 8), a considerable partial CSS is still observed atleast up to θx ∼ 157 mrad (9◦), θy ∼ 262 mrad (15◦) (seeFig. 3a). Since the other axes can contribute at such highangular values, some partial CSS effect can appear at anycrystal alignment.

Figure. 3b reveals that the CSS effect may be hamperedat relatively large incidence angles by the appearance of thepeaks originating from the coherent scattering on high-indexplanes, which were observed experimentally as well as pre-dicted by simulations especially in scan 6b at 6 and 9 mradof θx .

Thereby, we conclude that the anisotropy of multiple scat-tering can be observed at broad angle w.r.t. the crystallineorientations. Furthermore, at higher energies the CSS effectis preserved, since neither the right hand side of Eq. (10) northe upper angular limits in (7, 8) depend on energy for ultra-relativistic particles, while the lower limits decrease furtherwith energy. By the same reason the anisotropy of multi-ple scattering of ultrarelativistic particles depends neither onthe particle mass nor on its charge sign. However, the effectappears to be attenuated as the particle charge rises, becom-ing negligible for high-z ions.

4 Conclusions

In conclusion, the maximal effect of CSS in crystals hasbeen observed under proper choice of the incidence angle. Itresulted in decrease by about 7% in the multiple scatteringangle in a thin Si crystal target with the same mass thicknessas an amorphous one.

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Eur. Phys. J. C (2020) 80 :63 Page 5 of 8 63

Fig. 3 Dependence of angle ϑs on the vertical (a) and horizontal (b)angles of crystal orientation. The lines 1–3 are the results for the amor-phous target by the Molière model, experiment and simulations, respec-tively. Curve pairs (4,5), (6,7) represent the results for the crystal target.Even numbers are for experiment (solid curves), odd numbers are forCRYSTAL simulations (dashed curves). a (4a, 5a) θx is fixed at 3 mrad;(6a, 7a) both θx and θy are varied while keeping the ratio θx/θy = 0.6constant to avoid the intersection with high miller index crystalline

planes. b θy is fixed (4b, 5b) at 34.9 mrad (2◦); (6b, 7b) at 17.5 mrad(1◦). Blue disks (experiment) and red circles (CRYSTAL simulations)are the results for crystal alignment for maximal CSS effect θx = 3mrad, θy = 34.9 mrad highlighted in Fig. 2 and Table 1. The errors aregiven by the thickness of the lines for the amorphous target as well asby the error bars for the crystal. c The values of angles θx and θy , usedin corresponding curves in a , b

Partial CSS does exist and was observed even up to about15◦ tilt from the crystal axis, owing to its independence onenergy, mass and charge sign. We believe that the angulardependence of multiple scattering may be useful knowledgeto aid the modeling and design of nuclear physics and high-energy experiments. For instance, Geant4 [4], currently usingthe Molière model of scattering [2,3], may be implementedwith the model developped in this work.

Acknowledgements We acknowledge partial support of the INFN-ELIOT experiment and by the European Commission (the PEARLProject within the H2020-MSCA-RISE-2015 call, GA 690991). E.Bagli, L. Bandiera and A. Mazzolari recognize the partial support ofFP7-IDEAS-ERC CRYSBEAM project GA n. 615089. A. Mazzolariand V. Guidi acknowledge founding from PRIN 2015LYYXA8 “Multi-scale mechanical models for the design and optimization of micro-structured smart materials and metamaterials”. We also acknowledgethe CINECA award under the ISCRA initiative for the availability ofhigh performance computing resources and support. We acknowledgeProfessor H. Backe for fruitful discussions.

Data Availability Statement This manuscript has no associated dataor the data will not be deposited. [Authors’ comment: The datasetsgenerated during and/or analysed during the current study availablefrom the corresponding author on reasonable request.]

Open Access This article is licensed under a Creative Commons Attri-bution 4.0 International License, which permits use, sharing, adaptation,distribution and reproduction in any medium or format, as long as yougive appropriate credit to the original author(s) and the source, pro-vide a link to the Creative Commons licence, and indicate if changeswere made. The images or other third party material in this articleare included in the article’s Creative Commons licence, unless indi-cated otherwise in a credit line to the material. If material is notincluded in the article’s Creative Commons licence and your intendeduse is not permitted by statutory regulation or exceeds the permit-ted use, you will need to obtain permission directly from the copy-right holder. To view a copy of this licence, visit http://creativecomm

ons.org/licenses/by/4.0/.Funded by SCOAP3.

Appendix A: Theory of multiple scattering in a crystal

In this appendix we apply Born approximation [6,9,18] toestablish the conditions, in particular for crystal alignment,for coherent scattering suppression in a crystal owing to thediscreteness of momentum transfer, in particular Eqs. (7) and(8) in the main text. Calculation was done in the case of<100> axis and (110) plane of a Si crystal.

In order to find the conditions for coherent scattering sup-pression, one should compare the r.m.s. angle 〈ϑ2

x ′ 〉coh1 ofcoherent scattering with the r.m.s. angle 〈ϑ2

1 〉, characteriz-ing the suppression of incoherent scattering, established bythe cross-sections defined in the paper as dσcoh and dσ1,respectively. In other words, the difference of the total r.m.s.scattering angle in amorphous matter and in a crystal is〈ϑ2

x ′ 〉coh − 〈ϑ21 〉. The condition for complete coherent scat-

tering suppression holds

〈ϑ2x ′ 〉coh/〈ϑ2

1 〉 � 1. (A.1)

〈ϑ21 〉 is obtained by integration of the cross-section dσ1 as

follows⟨ϑ2x ′

1= nat l

ϑ2x ′dσ1

dΩdΩ = nat l

∫q2x ′p2

dσ1

dΩdΩ

= θ21

2

[(

1 + u21

R2

)

eu2

1R2 E1

(u2

1

R2

)

− 1

]

, (A.2)

1 x ′y′z′ is the Cartesian coordinate system connected with an incidentparticle, the momentum −→p of which is parallel to z′.

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63 Page 6 of 8 Eur. Phys. J. C (2020) 80 :63

see definitions of such quantities in the paper.Similarly, one can calculate the angle 〈ϑ2

x ′,y′ 〉coh by usingthe cross-section dσcoh . With this aim, one can express adirect summation of the exponents over the 8N 3 atoms ofN 3 elementary cells as∣∣∣∣∣∣

8N3∑

j=1

eiqri0

∣∣∣∣∣∣

2

=(

2πN

dat

)3 ∞∑

n1=−∞

∞∑

n2=−∞

∞∑

n3=−∞|S|2

×δ

(

q1 − 2πn1

d

)

δ

(

q2 − 2πn2

d

)

δ

(

q3 − 2πn3

d

)

,

(A.3)

where dat is lattice spacing and S the structure factor, whichcan be written for diamond-type crystal lattice [9,18] as

S =[1 + eiπ(n1+n2+n3)/2

][1 + cos (π (n1 + n2))

+ cos (π (n2 + n2)) + cos (π (n1 + n3))]. (A.4)

1, 2 and 3 correspond to the Cartesian axes associated withthe canonical base. In addition, one should [6] average thecross sectiondσcoh/dΩ over an initial beam angular distribu-tion. For certain cylindrical Gaussian, the following angulardistribution will be used

1

N

dN

d−→θ

= 1

2πδ2 e−

(−→θ −−→

θ0

)2/2δ2

, (A.5)

where−→θ = (

−→θ1 ,

−→θ2 ) are the angles of integration,

−→θ0 =

(−→θ01,

−→θ02) the mean angles of beam direction w.r.t. the crystal

planes 23 and 13 respectively. Thereby, θ0 is the beam anglew.r.t. the axis 3. Both angles are hereinafter considered as thesmall ones θ � 1, θ0 � 1. δ is the r.m.s. angular divergence.The actual value of δ can vary in the range of ∼ 20 to 200µrad through the passage of a ∼ 30 µm Si target. Since thetypical incidence angles well exceed 1 mrad � δ, the beamangular divergence can be treated as negligible and assumedto be independent on particle penetration depth.

By substituting dσcoh for dσ1 in (A.2) and by using (A.3),(A.4), (A.5) one finally obtains

{ 〈ϑ2x ′ 〉coh

〈ϑ2y′ 〉coh

}

= ∫{

ϑ2x ′

ϑ2y′

}dσcohdΩ

dΩ = 1p2

∫{q2x ′

q2y′

}dσcohdΩ

=(

2αZθ0 pv

)2 (2πdat

)3 nat8 l

∑∞n1=−∞

∑∞n2=−∞

∑∞n3=−∞ |S|2

×{

(θ01q2n2 − θ02q1n1)2

q23n3

}qn1n2qn1n2n3

exp(−q2

n1n2n3u2

1

)

(q2n1n2n3

+R−2)2

× 1√2πδqn1n2n3

exp[−(q3n3 + q1n1θ01 + q2n2θ02)

2/2δ2q2n1n2

],

(A.6)

where q2n1n2

= q21n1

+ q22n2

and q2n1n2n3

= q2n1n2

+ q23n3

.It is important to underline, that Eq. (A.6) is valued forany type of a crystal lattice as well as for any axes. Then,the structure factor is set as well as the directions of 1,2,3are assigned for the particular case under investigation. To

simplify the integration of (A.6) on angles dθ1 dθ2, theseangles were transformed by rotation of the coordinate sys-tem about axis 3 by angle ϕ, for which cos ϕ = q1n1/qn1n2 ,sin ϕ = q2n2/qn1n2 , and in which the second component ofq is equal to 0. We also applied the momentum conserva-tion law q1n1θ01 + q2n2θ02 = qn1n2θ cos ϕ = −q3n3 cos θ

(p′2 = (−→p + −→q )2 = p2).

Here ϕ is the angle formed by the transferred momentumprojection onto the plane 12 −→q n1n2 and the vector

−→θ . One

can pass to the same law in the negligible divergence limitδ → 0, arriving to the condition

q2n1n2n3

= q23n3

(1 + cos2 ϕ/θ2

)> q2

3n3/θ2, (A.7)

which limits the momentum transfer value from below atqn3 = 0. By rewriting Eq. (A.7) in terms of the Debye–Waller factor, which presents in (A.6)

D = exp(−u21q

2) ≤ exp(−u21q

23n3

/θ2), (A.8)

we conclude that the discrete nature of the longitudinalmomentum transfer qn3 = 2πn3/dat results in coherent scat-tering suppression by the Debye–Waller factor at q > h̄/u1.By assuming that D ≤ 0.01, and substituting the minimalmomentum axial transfer value q31 = 2π/dat , one readilycomes to the first condition for coherent scattering suppres-sion

θ <u1q31

2= πu1

dat≈ 43 mrad (2.5◦). (A.9)

This condition represents coherent scattering suppressionby individual atoms in the strings, when separate atomicstrings scatter charged particles as a whole. The suppressionrange (A.9) is illustrated in Fig. 4a, representing the ratio〈ϑ2

x ′ 〉coh/〈ϑ21 〉.

If the condition (A.9) is fulfilled, one can neglect the com-ponent q3n3 in (A.6). By assigning the coordinate system1,2,3 to the system x, y, z, in which z is parallel to 〈100〉 Siaxes as well as the planes (−110) and (110) are formed by xzand yz planes, respectively, and by using the structure factor(4A), one can rewrite (6A) as

〈ϑ2x ′ 〉coh = ∫

ϑ2x ′

dσcohdΩ

dΩ = 1p2

∫q2x ′

dσcohdΩ

=(

2αZθ0 pv

)22πdat

2πdax

2πdpl

nat l

×∞∑

m=−∞

∞∑k=−∞

(θ0xqym − θ0yqxk)2 exp(−q2

mku21

)

(q2mk+R−2

)2

× 1√2πδqmk

exp[−(qxkθ0x + qymθ0y)

2/2δ2q2mk

],

(A.10)

where q2mk = q2

xk +q2ym , dpl = dax = d ′ = dat/2

√2, qxk =

2πk/dpl and qym = 2πm/dax , k,m = 0,±1,±2, . . .. Herethe structure factor is trivial, i.e. |S|2 = 1. Equation (A.10)represents the case qz = 0, defined by the condition (A.9).This equation was used for calculation of the dependence ofthe average squared angle 〈ϑ2

x ′ 〉coh/〈ϑ21 〉 on θy in the limit

qz = 0.

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Eur. Phys. J. C (2020) 80 :63 Page 7 of 8 63

Fig. 4 “Axial” and “planar” dependence of the average squared angle〈ϑ2

x ′ 〉coh/〈ϑ21 〉 (calculated with Eqs. (A.6) and (A.2)) of coherent 855

MeV electrons scattering by (110) planes in a 30 µm Si crystal on bothincidence angles, θx and θy respectively. a “Axial” dependence, evalu-ated at θx = 3 mrad with both qz = 0 and all the qz = 0 contributions(red solid line), the left dashed blue line is the qz = 0 contribution(A.10). b “Planar” dependence, evaluated at θy = 34.9 mrad (2◦) with

both qz = 0 and all the qz = 0 contributions (blue solid line), whilethe red dashed line was evaluated in the limit of isolated plane (A.13).c The same dependence on both θx and θy angles. White cross marksthe optimal orientation for coherent scattering suppression θx = 3 mradand θy = 34.9 mrad, dashed horizontal and vertical lines represent solidcurves on plots (b, a), respectively

The momentum consevation law can be obtained similarlyby Eq. (A.7) under the limit of negligible divergence δ → 0,qxn = −qymθy/θx , q2

mk = q2xk + q2

ym = q2ymθ2/θ2

x , givingthe condition for the Debye–Waller factor (compare (A.8)):

D = exp(−u21q

2) = exp[−u2

1(q2x + q2

y )]

≤ exp(−u21q

2y1θ

2/θ2x ). (A.11)

Assuming again D ≤ 0.01 one arrives to the second condi-tion for coherent scattering suppression:

10θplch ≈ 2 mrad < θx < u1qy1θy/2

= πu1

daxθy ≈ 0.12θy ≈ 4.3 mrad. (A.12)

This condition represents coherent scattering suppression byindividual strings in the planes, when separate planes scattercharged particles as a whole. qy1 = 2π/dax = 4

√2π/dat is

the minimal momentum transfer parallel to the yz or (110)plane. The numerical estimate (A.12) has been done for thechosen axial angle θ = 2◦. The suppression range (A.12)is illustrated in Fig. 4b, representing the ratio 〈ϑ2

x ′ 〉coh/〈ϑ21 〉

in dependence on the horizontal angle θx . The peaks in thisdependence originate from the coherent scattering on high-index planes. On can eliminate their influence by the appli-cation of the limit isolated plane (dpl → ∞). Followingcondition (A.11) one can rewrite Eq. (A.10) as

〈ϑ2x ′ 〉coh =

(2αZ

θ0 pv

)2 2π

dat

daxnat l

θ2x + θ2

y

θ3x

×∞∑

m=−∞q2ym

exp(−u2

1q2ym(θ2

x + θ2y )/θ

2x

)

(q2ym(θ2

x + θ2y )/θ

2x + R−2

)2 . (A.13)

This equation was used to build up the dependence illus-trated in Fig. 4b in the limit of isolated plane, eliminating thecontribution by high-index planes, but preserving the rangeof coherent scattering suppression, defined by the condition(A.12).

The left hand side condition (A.12), in which θplch is the

planar channeling angle, has been implied to assure suffi-cient precision of Born approximation. It follows, directlyfrom the estimate of the influence of particle deflection inthe average planar potential on the angle of incoherent elec-tron scattering by nuclei [19], which cannot be estimated inBorn approximation. The condition (A.12) can be substitutedin (A.9)

10θplch dax

πu1≈ 18 mrad(1◦) < θy ≤ θ <

u1q31

2

= πu1

dat≈ 43 mrad (2.5◦). (A.14)

Figure 4c illustrates the region of practically completesuppression 〈ϑ2

x ′ 〉coh < 0.01〈ϑ21 〉 (as required by A.1) of the

coherent scattering (central dark triangle) predicted by Eqs.(A.12) and (A.14). This coordinate point θx = 3 mrad andθy = 2◦ ≈ 35 mrad, marked by the white cross, correspondsto the electron incidence direction, which has been selectedas the most appropriate one for the conducted experiment onthe first observation of the coherent scattering suppressioneffect, presented in Fig. 2 of the paper.

References

1. M. Tanabashi et al., (Particle Data Group), Review of particlephysics. Phys. Rev. D 98, 030001 (2018)

2. G. Molière, Z. Naturforschg. 3a, 78–97 (1948)

123

Page 8: Broad angular anisotropy of multiple scattering in a Si crystal · 2020-03-04 · coherent part of multiple scattering in a crystal vs crystal orientation with the beam. Experimental

63 Page 8 of 8 Eur. Phys. J. C (2020) 80 :63

3. H. Bethe, Phys. Rev. 89, 1256–1266 (1953)4. GEANT4 4 10.5 Physics Reference Manual. http://geant4.cern.ch/5. T.T. Böhlen et al., The FLUKA code: developments and challenges

for high energy and medical applications. Nucl. Data Sheets 120,211–214 (2014)

6. L. Landau, L. Pitaevskii, E. Lifshitz, Electrodynamics of Contin-uous Media, vol. 8, 2nd edn. (Butterworth-Heinemann, Oxford,1984). (ISBN-10: 0750626348)

7. R.W. James, The Optical Principles of the Diffraction of X-Rays(G. Bell And Sons Limited, London, 1962)

8. B. Ferretti, Nuovo Cimento 7, 118 (1950)9. M.L. Ter-Mikaelian, High-Energy Electromagnetic Processes in

Condensed Media (Wiley, New York, 1972)10. H. Überall, High-energy interference effect of bremsstrahlung and

pair production in crystals. Phys. Rev. 103, 1055 (1956)11. D. Lohmann et al., Nucl. Instrum. Methods Phys. Res. A 343(2–3),

494 (1994)12. C.A. Paterson et al. (CLAS Collaboration), Phys. Rev. C93, 065201

(2016)13. J. Lindhard, Kgl. Dan. Vid. Selsk. Mat.-Fys. Medd. 34(4), 2821–

2836 (1965)14. J. Stark, Zs. Phys. 13, 973–977 (1912)15. J.A. Davies, J. Friesen, J.D. McIntyre, Can. J. Chem. 38, 1526–

1534 (1960)16. M.T. Robinson, O.S. Oen, Appl. Phys. Lett. 2, 30–32 (1963)17. A.I. Akhiezer, N.F. Shul’ga, High Energy Electrodynamics in Mat-

ter (Gordon and Breach, New York, 1996). ISBN 2-88449-014-0

18. V.N. Baier, V.M. Katkov, V.M. Strakhovenko, ElectromagneticProcesses at High Energies in Oriented Single Crystals (WorldScientific, Singapore, 1998)

19. V.A. Bazylev, V.V. Goloviznin, A.V. Dernura, Zh Eksp, Teor. Fiz.92, 1946–1958 (1987)

20. A. Akhiezer, N. Shul’ga et al., Theor. Math. Phys. 23, 311–319(1975)

21. A. Akhiezer, N. Shul’ga et al., Sov. J. Particles Nuclei 10, 19–34(1979)

22. V. Koriukina, N. Shul’ga. arXiv:1908.00935 (2019)23. D. Lietti et al., Rev. Sci. Instrum. 86, 045102 (2015)24. W. Scandale et al., Phys. Lett. B 734, 1–6 (2014)25. Y.P. Xu, R.S. Huang, G.A. Rigby, J. Electr. Mat. 21(3), 373–381

(1992)26. D.C. Creagh, J.H. Hubbell, Acta Cryst. A 43, 102–112 (1987)27. A.I. Sytov, Vestnik BSU (in russian). Series 1(2), 48–52 (2014)28. A.I. Sytov, V.V. Tikhomirov, Nucl. Instrum. Methods Phys. Res. B

355, 383–386 (2015)29. A. Mazzolari et al., Phys. Rev. Lett. 112, 135503 (2014)30. L. Bandiera et al., Phys. Rev. Lett. 115, 025504 (2015)31. V. Guidi, L. Bandiera, V.V. Tikhomirov, Phys. Rev. A 86, 042903

(2012)

123