breakthrough patterning hardmask enables copper ......breakthrough patterning hardmask enables...
TRANSCRIPT
External Use
Applied Endura ® Cirrus™ PVD
Breakthrough Patterning Hardmask
Enables Copper Interconnect Scaling
R 139
G 141
B 142
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B 221
R 69
G 153
B 195
R 254
G 203
B 0
R 255
G 121
B 1
R 205
G 32
B 44
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B 0
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External Use
MOBILITY DRIVING AGGRESSIVE
SYSTEM on CHIP (SoC)
Multi-component SoCs designed
to meet both functionality and
form factor
SCALING THROUGH HIGHER DENSITY
INTERCONNECTS
External Use
Interconnects in Advanced Chips are Narrow and Dense
102 mm2 die size
>1 Billion transistors
>10 Layers of stacked wiring
COPPER INTERCONNECTS
connect elements on a chip
SoC
>20 KM COPPER WIRING
External Use
Interconnects Fabricated In-Situ on the Wafer
Patterning plays a key role in defining the interconnects
Selective removal to create wiring
pathways
Patterning
Copper wiring
Metallization
Exposure of a pattern (stencil)
Lithography
External Use
Patterning Challenges Limiting Interconnect Scaling
Complexity
Copper
Source: Tada, M.; Inoue, N.; Hayashi, Y.; "Performance Modeling of
Low-k /Cu Interconnects for 32-nm-Node and Beyond
Alignment
Perfect via alignment is critical for device yield
Via Landing
Cu Lines
Via Bottom
Via
Cu Line
Scaling
Via
1/2000th Human Hair
External Use
Metal Hardmask Layer Manages Alignment Errors
Larger vias overlaid onto the hardmask
Dielectric
Layer
Hardmask ensures the perfect via alignment critical for yield
Protected
Etched
Via Diameter
Meets Spec.
Hardmask layer masks un-intended overlays
Via Overlay Hardmask
External Use
Titanium Nitride is the Metal Hardmask of Choice
Titanium nitride (TiN) is one of
the hardest known materials
Titanium
Nitride Copper Metal
Harder Softer Hardness
Robust TiN hardmask film is essential for pattern fidelity
Diamond TiN Hardmask
Prevalent since the 90nm node
External Use
Physical Vapor Deposition Technology for TiN Hardmask
PVD is the leading technology
for metal deposition in chip
manufacturing
► Titanium atoms reactively
sputtered in nitrogen-based
plasma
► Tunable composition
External Use
Applied is the Leader in PVD TiN Systems
2007 2009 2011 2013
>200 PVD TiN systems
Standard PVD 2nd Gen. Ionized PVD Ionized PVD
External Use
High Film Density is Key for Hardness
High film density desired to prevent excessive erosion
* Inverse of hardmask etch rate during dielectric etch
Hard
er
to E
tch
*
TiN Film Density (g/cm^3)
Excessive Hardmask
Erosion
Hardmask
Resistant to Etch
Via CD In-Spec
High-Density
Hardmask
Via CD Out-of-Spec
Low-Density
Hardmask
CD = critical dimension
External Use
Conventional PVD TiN has High Compressive Stress
Neutral-to-tensile stress needed for pattern fidelity
Neutral Stress +ve (Tension) -ve (Compression)
External Use
Breakthrough Needed to Extend TiN Hardmask
Compressive
Low High
Neutral Stress
Film Density (Hardness)
Ideal Hardmask for
10 nm and Beyond
Alternative Technologies
CVD/ALD
Low-density films Tensile
Conventional PVD TiN
Possible to densify but stress penalty
Need Breakthrough
PVD = Physical Vapor Deposition
CVD = Chemical Vapor Deposition
ALD = Atomic Layer Deposition
External Use
Introducing Endura® CirrusTM HTX TiN Breakthrough in PVD TiN Hardmask
First PVD TiN system capable of tensile TiN
films with high density
VHF PVD-based technology for high
ionization
Tool of record at multiple customer sites
VHF = Very High Frequency
PVD = Physical Vapor Deposition
TiN = Titanium Nitride
External Use
Enhanced PVD Technology for TiN Films
Conventional PVD
► Higher plasma density
► Ion energy control
► Surface atom mobility
enhancement
Conventional PVD CirrusTM HTX TiN
PVD = Physical Vapor Deposition
TiN = Titanium Nitride
External Use
Precision Control Over TiN Film Growth
Cirrus chamber designed for tensile, high-density TiN films
Nucleation (0 – 50Å)
Dense Nucleation with a mixture
of (111) and (200) orientation
Film Growth
Conventional TiN
Neutral-Dominant
Plasma
(50 – 150Å) (>200 Å)
Columnar microstructure dominated by (111) orientation
Highly Ionized
Plasma
CirrusTM HTX TiN
Smooth, dense microstructure dominated by (200) orientation
TiN = Titanium Nitride
Scan here to view animations
External Use
First PVD for Tensile, High-Density TiN Films
CirrusTM HTX TiN
Compressive
Low High
Neutral Stress
Film Density (Hardness)
Alternative Technologies
CVD/ALD
Low-density films Tensile
Conventional PVD
Possible to densify but stress penalty
PVD = Physical Vapor Deposition
CVD = Chemical Vapor Deposition
ALD = Atomic Layer Deposition
TiN = Titanium Nitride
External Use
Proven Performance for Dense, Narrow Patterns
CirrusTM HTX TiN
No Line Bending
Conventional TiN
Pattern Distortion No Line Bending
Higher Pattern Density (Dense Pattern)
Good pattern fidelity demonstrated on 10nm features Applied Materials Internal Data
TiN = Titanium Nitride
External Use
Proven Performance for Dense, Narrow Patterns Applied Endura® Cirrus™ HTX TiN System Breakthrough in Interconnect Patterning for Advanced Devices
Precision engineered hardmask addresses patterning
challenges for advanced interconnects
Tunable film stress for TiN thin films with
close-to-bulk density
Rapid traction with >80 chambers shipped since 2013
Maintains Applied’s leadership in metal hardmask
technology
External Use
