bpw 34 s - osram · bpw 34 s 1 version 1.6 | 2019-12-05 produktdatenblatt | version 1.1...
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BPW 34 S
1 Version 1.6 | 2019-12-05
Produktdatenblatt | Version 1.1 www.osram-os.com
Applications
BPW 34 S
DIL SMT Silicon PIN Photodiode
— LIDAR, Pre-Crash, ACC — Rain Sensors
Features: — Package: clear epoxy
— Corrosion Robustness Class: 3B
— Qualifications: The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. — ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)
— Suitable for reflow soldering — Especially suitable for applications from 400 nm to 1100 nm — Short switching time (typ. 20 ns) — DIL plastic package with high packing density
Ordering Information
Type Photocurrent 1) Photocurrent Ordering Codetyp.
Ev = 1000 lx; Std. Light A; VR = 5 V Ev = 1000 lx; Std. Light A; VR = 5 VIP IP
BPW 34 S-Z ≥ 55 µA 80 µA Q65110A1209
BPW 34 S
2 Version 1.6 | 2019-12-05
Maximum RatingsTA = 25 °C
Parameter Symbol Values
Operating Temperature Top min. max.
-40 °C100 °C
Storage temperature Tstg min. max.
-40 °C100 °C
Reverse voltage t ≤ 2 µs; TA = 25 °C
VR max. 32 V
Total power dissipation Ptot max. 150 mW
ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)
VESD max. 2 kV
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CharacteristicsTA = 25 °C
Parameter Symbol Values
Wavelength of max sensitivity λS max typ. 920 nm
Spectral range of sensitivity λ10% typ. 420 ... 1120 nm
Radiant sensitive area A typ. 7.02 mm²
Dimensions of active chip area L x W typ. 2.65 x 2.65 mm x mm
Half angle φ typ. 60 °
Dark current VR = 10 V
IR typ. max.
2 nA30 nA
Spectral sensitivity of the chip λ = 850 nm
Sλ typ. 0.62 A / W
Quantum yield of the chip λ = 850 nm
η typ. 0.90 Electrons / Photon
Open-circuit voltage Ev = 1000 lx; Std. Light A; VR = 0 V
VO min. typ.
300 mV365 mV
Short-circuit current Ev = 1000 lx; Std. Light A; VR = 0 V
ISC typ. 80 µA
Rise time VR = 5 V; RL = 50 Ω; λ = 850 nm
tr typ. 0.02 µs
Fall time VR = 5 V; RL = 50 Ω; λ = 850 nm
tf typ. 0.02 µs
Forward voltage IF = 100 mA; E = 0
VF typ. 1.3 V
Capacitance VR = 0 V; f = 1 MHz; E = 0
C0 typ. 72 pF
Temperature coefficient of voltage TCV typ. -2.6 mV / K
Temperature coefficient of short-circuit current Std. Light A
TCI typ. 0.18 % / K
Noise equivalent power VR = 10 V; λ = 850 nm
NEP typ. 0.041 pW / Hz1/2
Detection limit VR = 10 V; λ = 850 nm
D* typ. 6.5e12 cm x Hz1/2 / W
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Relative Spectral Sensitivity 2), 3)
Srel = f (λ)
400 600 800 1000λ [ ]
0
20
40
60
80
100[ ]
Directional Characteristics 2), 3)
Srel = f (φ)
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
1000
0
0
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Photocurrent/Open-Circuit Voltage 2), 3)
IP (VR = 5 V) / VO = f (Ev)
E
OHF01066
V
010
PΙ
-11010 1 10 2 10 4
10 0
10 1
10 2
10 3 410
310
210
110
10 0
VO
µA mV
Ι P
VO
10 3 lx
Dark Current 2), 3)
IR = f (VR); E = 0
0
OHF00080
Ι R
RV0 5 10 15 V 20
1000
2000
3000
4000
pA
Capacitance 2), 3)
C = f (VR); f = 1MHz; TA = 25°C
V
OHF00081
R
-210
C
0-110 010 110 210V
10
20
30
40
50
60
70
80
pF
100
BPW 34 S
6 Version 1.6 | 2019-12-05
Dark Current 2)
IR = f (TA); E = 0; VR = 10 VOHF05717
AT
10-1
˚C0 20 40 60 80 100
RInA
100
101
102
103
104
Power ConsumptionPtot = f (TA)
T
OHF00394
A
0
totP
020 40 60 80 ˚C 100
mW
20
40
60
80
100
120
140
160
BPW 34 S
7 Version 1.6 | 2019-12-05
Dimensional Drawing 4)
4.5 (0.177)4.3 (0.169)
4.0
(0.1
57)
3.7
(0.1
46)
1.5
(0.0
59)
1.7
(0.0
67)
0.9
(0.0
35)
0.7
(0.0
28)
Photosensitive area Cathode lead
GEOY6863
0.3
(0.0
12)
6.7 (0.264)
6.2 (0.244)1.
2 (0
.047
)1.
1 (0
.043
)
(0...
0.00
4)
0...5
˚0.
2 (0
.008
)0.
1 (0
.004
)
1.1 (0.043)0.9 (0.035)
2.65 (0.104) x 2.65 (0.104)
1.8 (0.071)±0.2 (0.008)
Chip position
0...0
.1
Further Information:
Approximate Weight: 43.0 mg
Package marking: Cathode
Corrosion test: Class: 3B Test condition: 40°C / 90 % RH / 15 ppm H2S / 14 days (stricter than IEC 60068-2-43)
BPW 34 S
8 Version 1.6 | 2019-12-05
Recommended Solder Pad 4)
BPW 34 S
9 Version 1.6 | 2019-12-05
Reflow Soldering ProfileProduct complies to MSL Level 4 acc. to JEDEC J-STD-020E
00
s
OHA04525
50
100
150
200
250
300
50 100 150 200 250 300t
T
˚C
St
t
Pt
Tp240 ˚C
217 ˚C
245 ˚C
25 ˚C
L
Profile Feature Symbol Pb-Free (SnAgCu) Assembly UnitMinimum Recommendation Maximum
Ramp-up rate to preheat*)
25 °C to 150 °C2 3 K/s
Time tSTSmin to TSmax
tS 60 100 120 s
Ramp-up rate to peak*)
TSmax to TP
2 3 K/s
Liquidus temperature TL 217 °C
Time above liquidus temperature tL 80 100 s
Peak temperature TP 245 260 °C
Time within 5 °C of the specified peaktemperature TP - 5 K
tP 10 20 30 s
Ramp-down rate*TP to 100 °C
3 6 K/s
Time25 °C to TP
480 s
All temperatures refer to the center of the package, measured on the top of the component* slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range
BPW 34 S
10 Version 1.6 | 2019-12-05
Taping 4)
BPW 34 S
11 Version 1.6 | 2019-12-05
Tape and Reel 5)
D0
2P
P0
1P
WFE
Direction of unreeling
N
W1
2W
A
OHAY0324
Label
Leader:Trailer:
13.0
Direction of unreeling
±0.2
5
min. 160 mm *min. 400 mm *
*) Dimensions acc. to IEC 60286-3; EIA 481-D
Reel DimensionsA W Nmin W1 W2 max Pieces per PU
180 mm 12 + 0.3 / - 0.1 mm 60 mm 12.4 + 2 mm 18.4 mm 1500
BPW 34 S
12 Version 1.6 | 2019-12-05
Barcode-Product-Label (BPL)
Dry Packing Process and Materials 4)
OHA00539
OSRAM
Moisture-sensitive label or print
Barcode label
Desiccant
Humidity indicator
Barcode label
OSRAM
Please check the HIC immidiately afterbag opening.
Discard if circles overrun.Avoid metal contact.
WET
Do not eat.
Comparatorcheck dot
parts still adequately dry.
examine units, if necessary
examine units, if necessary
5%
15%
10%bake units
bake units
If wet,
change desiccant
If wet,
Humidity IndicatorMIL-I-8835
If wet,
Mois
ture
Level 3
Flo
or tim
e 168 H
ours
Mois
ture
Level 6
Flo
or tim
e 6
Hours
a) H
umid
ity In
dicato
r C
ard is
> 1
0% w
hen read a
t 23 ˚
C ±
5 ˚C
, or
reflo
w, v
apor-phase r
eflow
, or equiv
alent p
rocessin
g (peak p
ackage
2. Afte
r th
is b
ag is o
pened, devic
es that w
ill b
e subje
cted to
infrare
d
1. Shelf
life in
seale
d bag: 2
4 month
s at <
40 ˚
C a
nd < 9
0% rela
tive h
umid
ity (R
H).
Mois
ture
Level 5
a
at facto
ry c
onditions o
f
(if b
lank, s
eal date
is id
entical w
ith d
ate c
ode).
a) M
ounted w
ithin
b) S
tore
d at
body tem
p.
3. Devic
es require
bakin
g, befo
re m
ounting, i
f:
Bag s
eal date
Mois
ture
Level 1
Mois
ture
Level 2
Mois
ture
Level 2
a4. If b
aking is
require
d,
b) 2a o
r 2b is
not m
et.
Date
and ti
me o
pened:
refe
rence IP
C/J
ED
EC
J-S
TD
-033 fo
r bake p
rocedure
.
Flo
or tim
e see b
elow
If bla
nk, see b
ar code la
bel
Flo
or tim
e > 1
Year
Flo
or tim
e 1
Year
Flo
or tim
e 4
Weeks10%
RH
.
_<
Mois
ture
Level 4
Mois
ture
Level 5
˚C).
OPTO
SEM
ICO
NDUCTORS
MO
ISTURE S
ENSITIV
E
This b
ag conta
ins
CAUTION
Flo
or tim
e 72 H
ours
Flo
or tim
e 48 H
ours
Flo
or tim
e 24 H
ours
30 ˚C
/60%
RH
.
_<
LE
VE
L
If bla
nk, see
bar code la
bel
Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card according JEDEC-STD-033.
BPW 34 S
13 Version 1.6 | 2019-12-05
Schematic Transportation Box 4)
OHA02044
PACKVAR:
R077Additional TEXT
P-1+Q-1
Multi TOPLED
Muste
r
OSRAM Opto
Semiconductors
(6P) BATCH NO:
(X) PROD NO:
10
(9D) D/C:
11(1T) LOT NO:
210021998
123GH1234
024 5
(Q)QTY: 2000
0144
(G) GROUP:
260 C RT240 C R
3
220 C R
MLBin3:Bin2: Q
-1-20
Bin1: P-1-20
LSY T6762
2a
Temp ST
R18DEMY
PACKVAR:
R077Additional TEXT
P-1+Q-1
Multi TOPLED
Muste
r
OSRAM Opto
Semiconductors
(6P) BATCH NO:
(X) PROD NO:
10
(9D) D/C:
11(1T) LOT NO:
210021998
123GH1234
024 5
(Q)QTY: 2000
0144
(G) GROUP:
260 C RT240 C R
3
220 C R
MLBin3:Bin2: Q
-1-20
Bin1: P-1-20
LSY T6762
2a
Temp ST
R18DEMY
OSRAM
Packing
Sealing label
Barcode label
Mois
ture
Level 3
Flo
or tim
e 168 H
ours
Mois
ture
Level 6
Flo
or tim
e 6
Hours
a) H
umid
ity In
dicato
r C
ard is
> 1
0% w
hen read a
t 23 ˚
C ±
5 ˚C
, or
reflo
w, v
apor-phase r
eflow
, or e
quivale
nt pro
cessing (p
eak package
2. Afte
r th
is b
ag is o
pened,
devices th
at will
be s
ubjecte
d to in
frare
d
1. Shelf
life in
seale
d bag: 2
4 month
s at <
40 ˚
C a
nd < 9
0% rela
tive h
umid
ity (R
H).
Mois
ture
Level 5
a
at facto
ry c
onditions o
f
(if b
lank, s
eal date
is id
entical w
ith d
ate c
ode).
a) M
ounted w
ithin
b) S
tore
d at
body te
mp.
3. Devic
es require
bakin
g, befo
re m
ounting, i
f:
Bag s
eal date
Mois
ture
Level 1
Mois
ture
Level 2
Mois
ture
Level 2
a4. If b
aking is
require
d,
b) 2a o
r 2b is
not m
et.
Date
and ti
me o
pened:
refe
rence IP
C/J
ED
EC
J-S
TD-0
33 for bake p
rocedure
.
Floor
time s
ee belo
w
If bla
nk, see b
ar code la
bel
Flo
or tim
e > 1
Year
Floor
time
1 Y
ear
Flo
or tim
e 4
Weeks10%
RH
.
_<
Mois
ture
Level 4
Mois
ture
Level 5
˚C).
OPTO
SEM
ICONDUCTO
RS
MO
ISTURE S
ENSITIV
E
This b
ag conta
ins
CAUTION
Flo
or tim
e 72 H
ours
Flo
or tim
e 48 H
ours
Flo
or tim
e 24 H
ours
30 ˚C
/60%
RH
.
_<
LE
VE
L
If bla
nk, see
bar code la
bel
Barcode label
Dimensions of Transportation BoxWidth Length Height
195 ± 5 mm 195 ± 5 mm 30 ± 5 mm
BPW 34 S
14 Version 1.6 | 2019-12-05
NotesThe evaluation of eye safety occurs according to the standard IEC 62471:2006 (photo biological safety of lamps and lamp systems). Within the risk grouping system of this IEC standard, the device specified in this data sheet falls into the class exempt group (exposure time 10000 s). Under real circumstances (for expo-sure time, conditions of the eye pupils, observation distance), it is assumed that no endangerment to the eye exists from these devices. As a matter of principle, however, it should be mentioned that intense light sources have a high secondary exposure potential due to their blinding effect. When looking at bright light sources (e.g. headlights), temporary reduction in visual acuity and afterimages can occur, leading to irrita-tion, annoyance, visual impairment, and even accidents, depending on the situation.
Subcomponents of this device contain, in addition to other substances, metal filled materials including silver. Metal filled materials can be affected by environments that contain traces of aggressive substances. There-fore, we recommend that customers minimize device exposure to aggressive substances during storage, production, and use. Devices that showed visible discoloration when tested using the described tests above did show no performance deviations within failure limits during the stated test duration. Respective failure limits are described in the IEC60810.
For further application related information please visit www.osram-os.com/appnotes
BPW 34 S
15 Version 1.6 | 2019-12-05
Disclaimer
Attention please!The information describes the type of component and shall not be considered as assured characteristics.Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances.For information on the types in question please contact our Sales Organization.If printed or downloaded, please find the latest version on the OSRAM OS website.
PackingPlease use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.
Product and functional safety devices/applications or medical devices/applicationsOSRAM OS components are not developed, constructed or tested for the application as safety relevant component or for the application in medical devices.OSRAM OS products are not qualified at module and system level for such application.
In case buyer – or customer supplied by buyer – considers using OSRAM OS components in product safety devices/applications or medical devices/applications, buyer and/or customer has to inform the local sales partner of OSRAM OS immediately and OSRAM OS and buyer and /or customer will analyze and coordi-nate the customer-specific request between OSRAM OS and buyer and/or customer.
BPW 34 S
16 Version 1.6 | 2019-12-05
Glossary1) Photocurrent: The photocurrent values are measured (by irradiating the devices with a homogenous
light source and applying a voltage to the device) with a tolerance of ±11 %.2) Typical Values: Due to the special conditions of the manufacturing processes of semiconductor devic-
es, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could dif-fer from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice.
3) Testing temperature: TA = 25°C (unless otherwise specified)4) Tolerance of Measure: Unless otherwise noted in drawing, tolerances are specified with ±0.1 and
dimensions are specified in mm.5) Tape and Reel: All dimensions and tolerances are specified acc. IEC 60286-3 and specified in mm.
BPW 34 S
17 Version 1.6 | 2019-12-05
Revision HistoryVersion Date Change
1.6 2019-12-03 Characteristics Electro - Optical Characteristics (Diagrams)
BPW 34 S
18 Version 1.6 | 2019-12-05
Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93055 Regensburg www.osram-os.com © All Rights Reserved.