bjt (bipolar junction transistor) - maulana.lecture.ub.ac.id · electron emiter menyebar ke basis...
TRANSCRIPT
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BJT
(Bipolar Junction Transistor)
Elektronika(TKE 4012)
Eka Maulana
maulana.lecture.ub.ac.id
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Pokok Bahasan
• Dasar Transistor
• Arus transistor
• Koneksi rangkaian
• Kurva transistor
• Pendekatan transistor
• Datasheet
• Load Line
• Titik Kerja
BJT (Bipolar Junction Transistor)
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KOLEKTOR
(medium doping)
BASIS
(light doping)
EMITOR
(heavy doping)
N
N
BJT terdiri dari 3 bagian (dopping)
BJT (Bipolar Junction Transistor)
P
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N
P
N
VCE
VCC
RC
RB
VBB
VBE
Saat transistor NPN dibias maju,
electron emiter menyebar ke basis dan kolektor
BJT (Bipolar Junction Transistor)
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Aliran Arus Aliran Elektron
IC
IB
IE
IC
IB
IE
IE = IC + IB IC @ IE IB << IC
adc = IC
IE
bdc = IC
IB
BJT (Bipolar Junction Transistor)
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VCE
VCC
RC
RB
VBB
VBE
Common Emitor memiliki dua loop:Loop Basis dan Loop Kolektor
BJT (Bipolar Junction Transistor)
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Notasi Subscript
• Ketika notasi subscript sama, maka
menyatakan sumber tegangan (VCC).
• Ketika notasi subscript sama,
menyatakan tegangan dua titik (VCE).
• Notasi single digunakan untuk
menyatakan tegangan node dengan
ground sebagai referensi (VC).
BJT (Bipolar Junction Transistor)
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VCE
VCC
RC
RB
VBB
VBE
Rangkaian pada BASIS biasanya dianalisis
dengan pendekatan yang sama seperti digunakan pada dioda.
IB =VBB - VBE
RB
BJT (Bipolar Junction Transistor)
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0 2 4 6 8 10 12 14 16 18
2
4
6
8
10
12
14
VCE (Volts)
IC (mA)
Grafik IC versus VCE
20 mA
0 mA
100 mA
80 mA
60 mA
40 mA
(nilai IB baru merepresentasikan kurva baru)
BJT (Bipolar Junction Transistor)
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Daerah Kerja Transistor
• Cutoff - digunakan untuk aplikasi switching
• Active - digunakan untuk penguatan linear
• Saturation - digunakan untuk aplikasi switching
• Breakdown - dapat merusak transistor
BJT (Bipolar Junction Transistor)
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Pendekatan Rangkaian Transistor
• First: dioda ideal pada basis-emitor dan
menggunakan bIB untuk menentukan IC.
• Second: menggunakan VBE dan bIB untuk
menentukan IC.
• Third (and higher): menggunakan
perhitungan resistansi bulk dan pengaruh
lain. Biasanya diselesaikan dengan simulasi
komputer.
BJT (Bipolar Junction Transistor)
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bdcIB VCEVBE = 0.7 V
Pendekatan Kedua:
BJT (Bipolar Junction Transistor)
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VCC
RC
RB
VBB
VBE = 0.7 V
IB =VBB - VBE
RB
IB =5 V - 0.7 V
100 kW
5 V
100 kW
= 43 mA
BJT (Bipolar Junction Transistor)
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VCC
RC
RB
VBB 5 V
100 kW
IB = 43 mA
bdc = 100
IC = bdc IB
IC = 100 x 43 mA = 4.3 mA
BJT (Bipolar Junction Transistor)
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VCC
RC
RB
VBB 5 V
100 kW
IB = 43 mA
IC = 4.3 mA
1 kW
12 V
VRC= IC x RC
VRC= 4.3 mA x 1 kW = 4.3 V
BJT (Bipolar Junction Transistor)
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VCC
RC
RB
VBB 5 V
100 kW
IB = 43 mA
IC = 4.3 mA
1 kW
12 V
VCE = VCC - VRC
VCE
VCE = 12 V - 4.3 V = 7.7 V
BJT (Bipolar Junction Transistor)
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Typical Breakdown Ratings
• VCBO = 60 V
• VCEO = 40 V
• VEBO = 6 V
• Note: these are reverse breakdown ratings
BJT (Bipolar Junction Transistor)
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0
2
4
6
8
10
12
14
VCE (Volts)
IC (mA)
50
Grafik breakdown Colector
BJT (Bipolar Junction Transistor)
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Typical Maximum Ratings
• IC = 200 mA dc
• PD = 250 mW (for TA = 60 oC)
• PD = 350 mW (for TA = 25 oC)
• PD = 1 W (for TC = 60 oC)
BJT (Bipolar Junction Transistor)
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Pembiasan BJT
(Bipolar Junction Transistor)
Elektronika(TKE 4012)
Eka Maulana
maulana.lecture.ub.ac.id
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VCC
RC
RB
VBB 12 V
1 kW
12 V
VCE = VCC - ICRC
VCE
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0 2 4 6 8 10 12 14 16 18
2
4
6
8
10
12
14
VCE in Volts
IC in mA
20 mA
0 mA
100 mA
80 mA
60 mA
40 mA
IC =VCC - VCE
RC
Persaman ini menghasilkan load line.
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VCC
RC
RB
VBB 12 V
1 kW
12 V
Mental
short
IC = 12 V
1 kW
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0 2 4 6 8 10 12 14 16 18
2
4
6
8
10
12
14
VCE in Volts
IC in mA
20 mA
0 mA
100 mA
80 mA
60 mA
40 mA
IC = 12 V
1 kW= 12 mA Arus satutasi
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VCC
RC
RB
VBB 12 V
1 kW
12 V
Mental
open
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0 2 4 6 8 10 12 14 16 18
2
4
6
8
10
12
14
VCE in Volts
IC in mA
20 mA
0 mA
100 mA
80 mA
60 mA
40 mA
VCE(cutoff) = VCC
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0 2 4 6 8 10 12 14 16 18
2
4
6
8
10
12
14
VCE in Volts
IC in mA
20 mA
0 mA
100 mA
80 mA
60 mA
40 mA
load line baru dengan kemiringan yang sama
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VCC
RC
RB
VBB 12 V
1 kW
12 V
Ubah RC:
VCE
750 W
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0 2 4 6 8 10 12 14 16 18
2
4
6
8
10
12
14
VCE in Volts
IC in mA
20 mA
0 mA
100 mA
80 mA
60 mA
40 mA
Smaller RC menghasilkan steeper slope
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0 2 4 6 8 10 12 14 16 18
2
4
6
8
10
12
14
VCE in Volts
IC in mA
20 mA
0 mA
100 mA
80 mA
60 mA
40 mA
Rangkain dapat dioperasikan pada setiap titik pada load line
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VCC
RC
RB = 283 kW
VBB 12 V
1 kW
12 V
IB =VBB - VBE
RB
The operating point is determined by the base current.
IB =12 V - 0.7 V
283 kW= 40 mA
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0 2 4 6 8 10 12 14 16 18
2
4
6
8
10
12
14
VCE in Volts
IC in mA
20 mA
0 mA
100 mA
80 mA
60 mA
40 mA
The operating point is called the quiescent point.
Q
This Q point is in the linear region.
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0 2 4 6 8 10 12 14 16 18
2
4
6
8
10
12
14
VCE in Volts
IC in mA
20 mA
0 mA
100 mA
80 mA
60 mA
40 mA
Saturation and cutoff are non-linear operating points.
These Q points are used in switching applications.
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Recognizing saturation
• Assume linear operation.
• Perform calculations for currents and
voltages.
• An impossible result means the
assumption is false.
• An impossible result indicates saturation.
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Base bias
• The base current is established by VBB
and RB.
• The collector current is b times larger in
linear circuits.
• The transistor current gain will have a
large effect on the operating point.
• Transistor current gain is unpredictable.
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VCC
RC
REVBB 5 V
1 kW
15 V
1 kW
2.2 kW
IE =VBB - VBE
RE
= 1.95 mA
VC = 15 V - (1.95 mA)(1 kW) = 13.1 V
Emitter bias:
VCE = 13.1 V - 4.3 V = 8.8 V
IC @ IE