biomedical instrumentation chapter 6 in introduction to biomedical equipment technology by joseph...
TRANSCRIPT
Biomedical Instrumentation
Chapter 6 in Introduction to Biomedical
Equipment Technology
By Joseph Carr and John Brown
Signal Acquisition
Medical Instrumentation typically entails monitoring a signal off the body which is analog, converting it to an electrical signal, and digitizing it to be analyzed by the computer.
Types of Sensors:
Electrodes: acquire an electrical signal
Transducers: acquire a non-electrical signal (force, pressure, temp etc) and converts it to an electrical signal
Active vs Passive Sensors:
Active Sensor: • Requires an external AC or DC electrical
source to power the device • Strain gauge, blood pressure sensor
Passive Sensor: • Provides it own energy or derives energy
from phenomenon being studied • Thermocouple
5 Categories of Errors:1. Insertion Error2. Application Error3. Characteristic Error4. Dynamic Error5. Environmental Error
Dynamic Error:• Most instruments are calibrated in static
conditions if you are reading a thermistor it takes time to change its value. If you read this value to quickly an error will result.
Sensor Terminology
Sensitivity: • Slope of output characteristic curve Δy/ Δx;
• Minimum input of physical parameter will create a detectable output change
• Blood pressure transducer may have a sensitivity of 10 uV/V/mmHg so you will see a 10 uV change for every V or mmHg applied to the system.
Input
Output
Input
Output
Which is more sensitive? The left side one because you’ll have a larger change in y for a given change in x
Sensor Terminology
Sensitivity Error = Departure from ideal slope of a characteristic curve
Ideal Curve
Sensitivity Error
Output
Input
Sensor Terminology
Range = Maximum and Minimum values of applied parameter that can be measured. • If an instrument can read up to 200 mmHg
and the actual reading is 250 mmHg then you have exceeded the range of the instrument.
Sensor Terminology
Dynamic Range: total range of sensor for minimum to maximum. Ie if your instrument can measure from -10V to +10 V your dynamic range is 20V
Precision = Degree of reproducibility denoted as the range of one standard deviation σ
Resolution = smallest detectable incremental change of input parameter that can be detected
Accuracy
Accuracy = maximum difference that will exist between the actual value and the indicated value of the sensor
XoXi
Offset Error
Offset error = output that will exist when it should be zero • The characteristic curve had the same
sensitive slope but had a y intercept
Zero offset errorOffset Error
Input Input
Output Output
Linearity
Linearity = Extent to which actual measure curved or calibration curve departs from ideal curve.
Linearity Nonlinearity (%) = (Din(Max) / INfs) * 100%
• Nonlinearity is percentage of nonlinear
• Din(max) = maximum input deviation
• INfs = maximum full-scale input
Input
Output
Ideal
Measure
Din(Max)
Full Scale Input
Hysteresis Hysteresis = measurement of how sensor
changes with input parameter based on direction of change
Hysteresis
The value B can be represented by 2 values of F(x), F1 and F2. If you are at point P then you reach B by the value F2. If you are at point Q then you reach B by value of F1.
Input = x
Output = F(x)
B
F1
F2P
Q
Response Time
Response Time: Time required for a sensor output to change from previous state to final settle value within a tolerance band of correct new value denoted in red can be different in rising and decaying directions
Tolerance Band
Ton
Tresponse100%70% Rising Response Time
Time
F(t)
Response Time
Time Constant: Depending on the source is defined as the amount of time to reach 0% to 70% of final value. Typically denoted for capacitors as T = R C (Resistance * Capacitance) denoted in Blue
Tolerance Band
Ton
Tresponse100%70% Rising Response Time
Time
F(t)
Response Time
Decaying Response Time
Toff
TdecayF(t)
Time
Convergence Eye Movement the inward turning of the eyes have a different response time than divergence eye movements the outward turning of the eyes which would be the decay response time
Dynamic LinearityMeasure of a sensor’s ability to follow rapid changes in the input parameters. Difference between solid and dashed curves is the non- linearity as depicted by the higher order x terms
F(x) = m
x + K
F(x)* = ax + bx2+cx4+ . . . +K
Input X
OutputF(x)
KF(x) =
mx + K
F(x)* = ax + bx3+cx5+ . . . +K
Input X
OutputF(x)
K
Dynamic Linearity Asymmetric = F(x) != |F(-x)| where F(x)* is asymmetric around linear curve F(x) then
F(x) = ax + bx2+cx4+ . . . +K offsetting for K or you could assume K = 0 Symmetrical = F(x) = |F(-x)| where F(x) * is symmetric around linear curve F(x) then
F(x) = ax +bx3 + cx5 +. . . + K offsetting for K or you could assume K =0
When you look at the frequency response of an instrument, ideally you want a wideband flat frequency response.
Frequency () radians per second
Av Av = Vo/Vi1.0
Frequency Response of Ideal and Practical System
Frequency Response of Ideal and Practical System
Av Av = Vo/Vi1.00.707
FL FHFrequency () radians per second
In practice, you have attenuation of lower and higher frequencies
FL and FH are known as the –3 dB points in voltage systems.
Ideal Filter has sharp cutoffs and a flat pass band
Most filters attenuate upper and lower frequencies
Other filters attenuate upper and lower frequencies and are not flat in the pass band
Examples of Filters
Electrodes for Biophysical Sensing
Bioelectricity: naturally occurring current that exists because living organisms have ions in various quantities
Electrodes for Biophysical Sensing
Ionic Conduction: Migration of ions-positively and negatively charge molecules throughout a region. • Extremely nonlinear but if you limit the region
can be considered linear
Electrodes for Biophysical Sensing
Electronic Conduction: Flow of electrons under the influence of an electrical field
Bioelectrodes
Bioelectrodes: class of sensors that transduce ionic conduction to electronic conduction so can process by electric circuits • Used to acquire ECG, EEG, EMG, etc.
Bioelectrodes
3 Types of electrodes:
• Surface (in vivo) outside body
• Indwelling Macroelectrodes (in vivo)
• Microelectrodes (in vitro) inside body
Bioelectrodes Electrode Potentials:
• Skin is electrolytic and can be modeled as electrolytic solutions
Metal Electrode
Electrolytic Solution where Skin is electrolytic and can be modeled as saline
Electrodes in Solution
Have metallic electrode immersed in electrolytic solution once metal probe is in electrolytic solution it:
1. Discharges metallic ions into solution
2. Some ions in solution combine with metallic electrodes
3. Charge gradient builds creating a potential difference or you have an electrode potential or ½ cell potential
Electrodes in Solution
A++
B+++
2 cells A and B, A has 2 positive ions And B has 3 positive ions thus have aPotential difference of 3 –2 = 1 where Bis more positive than A
Electrodes
Two reactions take place at electrode/electrolyte interface:• Oxidizing Reaction: Metal -> electrons +
metal ions
• Reduction Reaction : Electrons + metal ions -> Metal
Electrodes Electrode Double Layer: formed by 2 parallel
layers of ions of opposite charge caused by ions migrating from 1 side of region or another; ionic differences are the source of the electrode potential or half-cell potential (Ve).
Metal A Metal BVae Vbe
Electrolytic Solution
Electrodes If metals are different you will have differential
potential sometimes called an electrode offset potential.• Metal A = gold Vae = 1.50V and Metal B = silver
Vbe = 0.8V then Vab = 1.5V – 0.8 V = 0.7V (Table 6-1 in book page 96)
Metal A Metal BVae Vbe
Electrolytic Solution
Electrodes Two general categories of material
combinations:• Perfectly polarized or perfectly
nonreversible electrode: no net transfer of charge across metal/electrolyte interface
• Perfectly Nonpolarized or perfectly reversible electrode: unhindered transfer of charge between metal electrode and the electrode• Generally select a reversible electrode such as
Ag-AgCl (silver-silver chloride)
R= internal resistance of body which is low Vd = Differential voltage Vd Rsa and Rsb = skin resistance at electrode A and B •R1A and R1B = resistance of electrodes
•C1A and C1B = capacitance of electrodes
CellularPotentials
Rsb
Rsa
R1a
R1b
C1a
C1b
RcCellularResistance
R Vd
Veb
Vea
Ionic Conduction Electronic Conduction
Electrode B
Electrode A
VoMassTissue
Resistance
Electrode Potentials cause recording Problems ½ cell potential ~ 1.5 V while biopotentials are
usually 1000 times less (ECG = 1-2 mV and EEG is 50 uV) thus have a tremendous difference between DC cell potential and biopotential
Strategies to overcome DC component• Differential DC amplifier to acquire signal thus the DC
component will cancel out
• Counter Offset-Voltage to cancel half-cell potential
• AC couple input of amplifier (DC will not pass through) ie capacitively couple the signal into the circuit
Electrode Potentials cause recording Problems
Strategies to overcome DC component• Differential DC amplifier to acquire signal thus
the DC component will cancel out
• Counter Offset-Voltage to cancel half-cell potential
• AC couple input of amplifier (DC will not pass through)
• Capacitively couple the signal into the circuit
Medical Surface Electrodes Typical Medical Surface Electrode: Use conductive gel to reduce impedance between electrode
and skin Schematic:
Electrode Surface
Binding SpotPin-Tip Connector Shielded Wire
Medical Surface Electrodes
Have an Ag-AgCl contact button at top of hollow column filled with gel• Gel filled column holds actual metallic
electrode off surface of skin and decreases movement artifact
• Typical ECG arrangement is to have 3 ECG electrodes (2 differentials signals and a reference electrode)
Problems with Surface Electrodes1. Adhesive does not stick for a long time on sweaty skin
2. Can not put electrode on bony prominences
3. Movement or motion artifact significant problem with long term monitoring results in a gross change in potential
4. Electrode slippage if electrode slips then thickness of jelly changes abruptly which is reflected as a change in electrode impedance and electrode offset potential (slight change in potential)
Potential Solutions for Surface Electrodes Problems
1. Additional Tape2. Rough surface electrode that digs past scaly
outer layer of skin typically not comfortable for patients.
Other Types of Electrodes
Needle Electrodes: inserted into tissue immediately beneath skin by puncturing skin on an angle note infection is a problem.
Indwelling Electrodes: Inserted into layers beneath skin -> typically tiny exposed metallic contact at end of catheter usually threaded through patient’s vein to measure intracardiac ECG to measure high frequency characteristics such as signal at the bundle of His
Other Types of Electrodes
EEG Electrodes: can be a needle electrode but usually a 1 cm diameter concave disc of gold or silver and is held in place by a thick paste that is highly conductive sometimes secured by a headband
Microelectrode
Microelectrode: measure biopotential at cellular level where microelectrode penetrates cell that immersed in an infinite fluid
• Saline.
Microelectrode Equivalent Circuit
RS = Spreading Resistance of the electrode and is a function of tip diameter
R1 and C1 are result of the effects of electrode/cell interface
C2 = Electrode Capacitance
V1Vo
C2C1
R1
RS
Calculation for Resistance Rs
Rs in metallic microelectrodes without glass coating:
r
PRs
4
K
cm
cmRs
4111
10501434
704
.
*..
where Rs = resistance ohms (Ώ)
P = Resistivity of the infinite solution outside electrode = 70 Ώcm for physiological saliner = tip radius ( ~0.5 um for 1 um electrode) = 0.5 x10-4 cm
Calculation for Resistance Rs Rs of glass coated metallic microelectrode is
1-2 order of magnitude higher:
rP
Rs2
M
cm
cmRs
513180
1431010143
7324
.
.*..
.
where Rs = resistance ohms (Ώ)P = Resistivity of the infintie solution outside electrode) = 3.7 Ώcm for 3 M KClr = tip radius typically 0.1 u m = 0.1 x 10-4 cm = taper angle (~ / 180)
Capacitance of Microelectrode
Capacitance of C2 has units pF/cm
rRe
Cln
.5502
Where e = dielectric constant which for glass = 4R = outside tip radius r = inside tip radius
Capacitance of Microelectrode
Find C of glass microelectrode if the outer radius is 0.2 um and the inner radius = 0.15 um
cm
pF
mm
rRe
C 7.7
15.02.0
ln
)4)(55.0(
ln
55.02
Transducers and other Sensors
Transducers: sensors and are defined as a device that converts energy from some one form (temp., pressure, lights etc) into electrical energy where as electrodes directly measure electrical information
Wheatstone Bridge
Basic Wheatstone Bridge uses one resistor in each of four arms where battery excites the bridge connected across 2 opposite resistor junctions (A and B). The bridge output Eo appears across C and D junction.
Es
R1
R2 R4
R3
ECED
+-
A
B
EoEo
R1R3
R2 R4
ECED
Es
Finding output voltage to a Wheatstone Bridge
Ex: A wheatstone bridge is excited by a 12V dc source and has the following resistances R1 = 1.2KΏ R2 = 3 K Ώ R3 = 2.2 K Ώ; and R4 = 5 K Ώ; find Eo
VVE
VE
RR
R
RR
REsE
o
o
o
24027
5
24
312
1051022
105
1031021
10312
43
4
21
2
33
3
33
3
...
**.
*
**.
*
Finding output voltage to a Wheatstone Bridge
A wheatstone bridge is excited by a 12V dc source and has the following resistances R1 = 1.2KΏ R2 = 3 K Ώ R3 = 2.2 K Ώ; and R4 = 5 K Ώ; find Eo
43
4
21
2
RR
REsE
RR
REsE
EEE
D
C
DCo
VVE
VE
RR
R
RR
REsE
o
o
o
24027
5
24
312
1051022
105
1031021
10312
43
4
21
2
33
3
33
3
...
**.
*
**.
*
Null Condition of Wheatstone Bridge
Null Condition is met when Eo = 0 can happen in 2 ways:• Battery = 0 (not desirable)• R1 / R2 = R3/ R4
Null Condition of Wheatstone Bridge
When R1 = 2KΏ; R2 = 1K Ώ; R3 = 10K Ώ; R4 = 5K Ώ
25
10
1
24
3
2
1
1*43*2
2*41*44*23*2
21443243
4
21
2
K
K
K
KR
R
R
R
RRRR
RRRRRRRR
RRRRRRRR
R
RR
R
Null Condition of Wheatstone Bridge
Key with null condition is if you change one of the resistances to be a transducer that changes based on input stimulus then Eo will also change according to input stimulus
Strain Gauges
Definition: resistive element that changes resistance proportional to an applied mechanical strain
Strain Gauges
Compression = decrease in length by L and an increase in cross sectional area.
Rest ConditionL = length
L - L = length Compression
Strain Gauges Tension = increase in length by L and a
decrease in cross section area.
Rest ConditionL = length
TensionL + L = length
Resistance of a metallic bar is given in length and area
• where
• R = Resistance units = ohms (Ώ)
• ρ = resistivity constant unique to type of material used in bar units = ohm meter (Ώm)
• L = length in meters (m)
• A = Cross sectional area in meters2 (m2 )
A
pLR
Resistance of a metallic bar is given in length and area
Example: find the resistance of a copper bar that has a cross sectional area of 0.5 mm2 and a length = 250 mm note the resistivity of copper is 1.7 x 10-8Ώm
0085.0
10001
5.0
10001
25010*7.1 2
2
8
mmm
mm
mmm
mmm
A
LR
Piezoresistivity Piezoresistivity = change in resistance for a
given change in size and shape denoted as h
Resistance in tension =
Resistance increases in tensionL = length; ΔL = change in L; ρ = resistivity
A = Area; ΔA = change in A
AA
LLhR
Resistance in compression =
Resistance decreases in compressionL = length; ΔL = change in L; ρ = resistivity
A = Area; ΔA = change in A
AA
LLhR
Note: Textbook forgot the ρ in equations 6-28 and 6-29 on page 110
Example of Piezoresistivity
Thin wire has a length of 30 mm and a cross sectional area of 0.01 mm2 and a resistance of 1.5Ώ. A force is applied to the wire that increases the length by 10 mm and decreases cross sectional
area by 0.0027 mm2 Find the change in resistance h.
• Note: ρ = resistivity = 5 x 10-7 Ώm
Example of Piezoresistivity
24.1
74.25.1
10001
*)0027.001.0(
10001
*)1030(10*5 2
2
7
h
h
mmm
mm
mmm
mmmhR
AA
LLhR
Example of Piezoresistivity
Note: Change in Resistance will be approximately linear for small changes in L as long as ΔL<<L.
If a force is applied where the modulus of elasticity is exceeded then the wire can become permanently damaged and then it is no longer a transducer.
Gauge Factor
where • GF = Gauge Factor unitless
• ΔR = change in resistance ohms (Ώ)
• R = unstrained resistance ohms (Ώ)
• ΔL = change in length meters (m)
• L = unstrained length meters (m)
LLR
RGF
Gauge Factor
• Where ε strain which is unitless GF gives relative sensitivity of a strain gauge where the
greater the change in resistance per unit length the greater the sensitivity of element and the greater the gauge factor.
LL
RR
GF
Example of Gauge Factor Have a 20 mm length of wire used as a string gauge
and has a resistance of 150 Ώ. When a force is applied in tension the resistance
changes by 2Ώ and the length changes by 0.07 mm. Find the gauge factor:
71.3
2007.0
1502
mmmm
LLR
RGF
Types of Strain Gauges: Unbonded and Bonded
Unbonded Strain Gauge : resistance element is a thin wire of special alloy stretch taut between two flexible supports which is mounted on flexible diaphram or drum head.
Types of Strain Gauges: Unbonded and Bonded When a Force F1 is applied to
diaphram it will flex in a manner that spreads support apart causing an increase in tension and resistance that is proportional to the force applied.
When a Force F2 is applied to diaphram the support ends will more close and then decrease the tension in taut wire (compression force) and decrease resistance will decrease in amount proportional to applied force
Types of Strain Gauges: Unbonded and Bonded
Bonded Strain Gauge: made by cementing a thin wire or foil to a diaphragm therefore flexing diaphragm deforms the element causing changes in electrical resistance in same manner as unbonded strain gauge
Types of Strain Gauges: Unbonded and Bonded
When a Force F1 is applied to diaphram it will flex in a manner that causes an increase in tension of wire then the increase in resistance is proportional to the force applied.
When a Force F2 is applied to diaphram that cause a decrease the tension in taut wire (compression force) then the decrease in resistance will decrease in amount proportional to applied force
Comparison of Bonded vs. Unbonded Strain Gauges
1. Unbonded strain gauge can be built where its linear over a wide range of applied force but they are delicate
2. Bonded strain gauge are linear over a smaller range but are more rugged
• Bonded strain gauges are typically used because designers prefer ruggedness.
Typical Configurations
R2 = SG2R4 = SG4
R3 = SG3
C+-
A
B
Vo
R1 = SG1
DES
Electrical Circuit Mechanical Configuration
4 strain gauges (SG) in Wheatstone Bridge:
Strain Gauge Example Using the configuration in the previous slide
where 4 strain gauges are placed in a wheatstone bridge where the bridge is balanced when no force is applied,
Assume a force is applied so that R1 and R4 are in tension and R2 and R3 are in compression.
Derive the equation to depict the change in voltage across the bridge and find the output voltage when each resistor is 200 Ώ, the change of resistance is 10 Ώ and the source voltage is 10 V
+
Strain Gauge Example
R2 = R - h R4 = R +h
R3= R-h
C+-
A
B
Eo
R1 = R +h
D
VVEo
R
hEs
R
hEs
R
hR
R
hREsEo
hRhR
hR
hRhR
hREsEo
RR
R
RR
REsEo
5.0200
1010
2
2
22
43
4
21
2
Circuit Derivation:
s
Note: Text book has wrongly stated that tension decreases R and compression increases R on page 112
Transducer Sensitivity
Transducer Sensitivity = rating that allows us to predict the output voltage from knowledge of the excitation voltage and the value of the applied stimulus units = μV/V*unit of applied stimulus
Transducer Sensitivity Example if you have a force transducer calibrated in
grams (unit of mass) which allows calibration of force transducer then sensitivity denoted as φ = μV/V*g (another ex φ = μV/V*mmHg)
Transducer Sensitivity
To calculate Output Potential use the following equations:
• where• Eo = output potential in Volts (V)
• E = excitation voltage
• φ = sensitivity μV/V*g
• F = applied force in grams (g)
FEEo **
Transducer Sensitivity Example: Transducer has a sensitivity of 10 μV/V*g,
predict the output voltage for an applied force of 15 g and 5 V of excitation.
•note book has typo where writes μV/V/g for sensitivity
VgVVg
VEFEo 750155
10
Inductance Transducers
Inductance Transducers: inductance L can be varied easily by physical movement of a permeable core within an inductor 3 basic forms:• Single Coil
• Reactive Wheatstone Bridge
• Linear Voltage Differential Transformer LVDT:
Capacitance Transducers
Quartz Pressure Sensors: capacitively based where sensor is made of fused quartz
Capacitive Transducers: Capacitance C varies with stimulus
Capacitive Transducers:
Three examples:• Solid Metal disc parallel to flexible metal diaphragm
separated by air or vacuum (similar to capacitor microphone) when force is applied they will move closer or further away.
• Stationary metal plate and rotating moveable plate: as you rotate capacitance will increase or decrease
• Differential Capacitance: 1 Moveable metal Plate placed between 2 stationary Places where you have 2 capacitors: C1 between P1 and P3 and C2 between P2 and P3 where when a force is applied to diaphragm P3 moves closer to one plate or vice versa
Thermocouple:
Thermocouple: 2 dissimilar conductor joined together at 1 end.
The work functions of the 2 materials are different thus a potential is generated when junction is heated (roughly linear over wide range)
Thermistors:
Thermistors: Resistors that change their value based on temperature where
• Positive Temperature Coefficient (PTC) device will increase its resistance with an increase in temperature
• Negative Temperature Coefficient (NTC) device will decrease its resistance with an increase in temperature
• Most thermistors have nonlinear curve when plotted over a wide range but can assume linearity if within a limited range
BJT = Bipolar Junction Transistor
Transistor = invented in 1947 by Bardeen, Brattain and Schockley of Bell Labs.
C
VCB
VCE
VBE
B = Base C = CollectorE = EmitterIE = I B + I C
BJT = Bipolar Junction Transistor
Transistor rely on the free travel of electrons through crystalline solids called semiconductors. Transistors usually are configured as an amplifier or a switch.”
Solid State PN Temperature Transducers
Solid State PN Junction Diode: the base emitter voltage of a transistor is proportional to temperature. For a differential pair the output voltage is:
q
II
KT
V C
C
BE
2
1ln
K = Boltzman’s Constant = 1.38 x10-23J/K
T = Temperature in Kelvin
IC1 = Collector current of BJT 1 mA
IC2 = Collector current of BJT 2 mA
q = Coulomb’s charge = 1.6 x10 -19 coulombs/electron
VCB
VEE-
VBE
VCB
VCC+
VBE
ccs1 ccs2
Ic1 Ic2
VBE
Example of temperature transducer
Find the output voltage of a temperature transducer in the previous slide if IC1 = 2 mA; IC2 = 1 mA and the temperature is 37 oC
VVCoulombs
mAmA
KKJV
q
II
KT
V
BE
BE
C
C
BE
0185.010*6.1
12
ln27337/10*38.1
ln
19
23
2
1
Homework
Read Chapter 7 Chapter 6 Problems: 1, 3 to 6, 9
• Problem 1: resistivity = 1.7 * 10-8Ώm
• Problem 4: sensitivity = 50 μV/(V*mmHg)
• Problem 4: 1 torr = 1 mmHg
• Problem 6: sensitivity = 50 μV/(V*g)
Review What are two types of sensors? List 5 categories of error How do we quantify sensors? What is an electrode? How do you calculate Rs and C2 of a microelectrode that is metal
with and without glass coating? What is a transducer? What is a Wheatstone Bridge? How do you derive the output
voltage Find resistance of a metallic bar for a given length and area How does resistance change in tension and in compression and
how do you calculate resistance
Review How do you find resistance change in piezoresistive device How do you determine gauge factor What is the definition of a strain gauge and what is difference
between bonded and unbonded strain gauge. Determine the output potential given a transducer’s sensitivity. What are inductance, capacitance, and temperature
transducers? How do you calculate the temperature for a solid state PN
Junction Diode?